JP3734376B2 - Radio wave transmissive wavelength selective glass and manufacturing method thereof - Google Patents
Radio wave transmissive wavelength selective glass and manufacturing method thereof Download PDFInfo
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- JP3734376B2 JP3734376B2 JP09059799A JP9059799A JP3734376B2 JP 3734376 B2 JP3734376 B2 JP 3734376B2 JP 09059799 A JP09059799 A JP 09059799A JP 9059799 A JP9059799 A JP 9059799A JP 3734376 B2 JP3734376 B2 JP 3734376B2
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- 239000011521 glass Substances 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002245 particle Substances 0.000 claims description 100
- 239000000758 substrate Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000005357 flat glass Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 102220047090 rs6152 Human genes 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004613 tight binding model Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3607—Coatings of the type glass/inorganic compound/metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3676—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electromagnetic shield
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/40—Coatings comprising at least one inhomogeneous layer
- C03C2217/42—Coatings comprising at least one inhomogeneous layer consisting of particles only
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は建造物、自動車などの窓ガラスに到来する電波、および可視光線を効率よく透過させることができるとともに、太陽の熱線を反射して充分な断熱性を発揮できる波長選択ガラスに関する。
【0002】
【従来の技術】
近年、日射を遮蔽することを目的として、導電性薄膜を被覆したり、または導電性薄膜を含むフィルムを貼り付けた窓ガラスが普及し始めた。このような窓ガラスを高層ビルに施行するとTV周波数帯域の電波を反射して、TV画面にゴーストを発生させる原因となるとともに室内アンテナで衛星放送を受信し難くなる。また、住宅用窓ガラス或いは自動車用窓ガラスとして用いた場合には、携帯電話が通じ難くなる可能性があったり、ガラスアンテナの利得が悪化したりする原因となりえる。
【0003】
このような事情から現状では、ガラス基板に電気抵抗の比較的高い透明な熱線反射膜を被覆して、可視光線の透過を一部させるとともに、電波の反射を低減させて電波障害を防止することが行なわれている。
【0004】
また、導電性膜付きガラスの場合には、ガラス基板に被覆させた導電性膜を、入射電波の電界方向に平行な導電性膜の長さを電波の波長の1/20倍以下になるように分割し、電波障害を防止することが特許第2620456号公報に示されている。
【0005】
【発明が解決しようとする課題】
しかしながら、従来の電気抵抗の比較的高い透明な熱線反射膜を被覆する方法は、電波の反射を低減して電波障害を防止することは出来るが、熱線遮蔽性能が十分ではなく、生活の快適性において問題があった。また、特許第2620456号公報に示された導電性膜を分割する方法は、分割する長さが太陽光の大部分を占める可視光、近赤外光の波長より非常に大きいので、これらの光は全て反射してしまい、電波障害を防止し充分な日射遮蔽性能を有する電波透過性波長選択スクリーンガラスは得られるが、可視光の透過性が確保できないという問題がある。さらに、開口部のサイズが2m×3mのように大きな窓では、例えば、衛星放送波を透過させるためには、衛星放送の波長約25mmの1/20、少なくとも導電膜を1.25mm平方に、好ましくは0.5mm平方に切断しなければならない。大面積の導電性膜をこのような小さいセグメントに、例えば、イットリウム−アルミニウム−ガーネットレーザで切断するには、長時間を要し現実的でない等の問題があった。
【0006】
【課題を解決するための手段】
本発明は、前記従来の問題点に鑑みて研究したものであって、TV放送、衛星放送、携帯電話それぞれの周波数帯域の電波に対して反射率を低減させて、電波障害を防止するとともに、充分な日射遮蔽性能と可視光線透過性を有する電波透過性波長選択ガラスを提供することを目的とする
【0007】
すなわち、本発明の電波透過性波長選択ガラスは、 ガラス基板表面、またはガラス基板上にAlN層(窒化アルミ層)を被覆した表面に、Ag粒子より構成されるAg層を積層させてなり、Ag粒子は、平均粒径100nm〜0 . 5mm、Ag層の厚さ5nm〜1μmの範囲にあることを特徴とする電波透過性波長選択ガラスである。
【0008】
【0009】
さらに、Ag粒子より構成されるAg層は、スパッタリング法により連続層よりなるAg層を成膜させたのち、熱処理することによりAg粒子に変化生成させたものでが好適であり、また、連続層よりなるAg層を熱処理することにより生成したAg粒子のAgは、熱処理前のAgと比較して、X線回折法で同定したAg(111)面の半値幅が85%以下に減少してなることが好ましい。
【0010】
またさらに、Ag粒子より構成されるAg層上にAlN層(窒化アルミ層)を被覆してなることもでき、電波透過性波長選択ガラスの反射率は、波長が600nm〜1500nmの範囲において最大値を有することが好ましい。
【0011】
また、式(1)で定義する近赤外域の遮蔽効率(Es)が0.3以上であることが好ましい。
【0012】
【式1】
【0013】
ここで、
λ :電波透過性波長選択ガラスに入射する電磁波の波長
Rdp:電波透過性波長選択ガラスの反射率
Isr:エアーマス1.0における太陽の放射強度
また、本発明の電波透過性波長選択ガラスの製法は、スパッタリング法によりガラス基板表面、またはガラス基板上にAlN層(窒化アルミ層)を被覆した表面に連続層よりなるAg層を成膜したのち、熱処理をすることにより、Ag粒子より構成されるAg層を生成させてなることを特徴とする電波透過性波長選択ガラスの製法である。
【0014】
【発明の実施の形態】
本発明の電波透過性波長選択ガラスは、ガラス基板表面、またはガラス基板上にAlN層(窒化アルミ層)を被覆した表面に、Ag粒子より構成されるAg層を被覆してなるものであり、その代表的な製法としては、スパッタリング法により、ガラス基板表面、またはガラス基板上にAlN層(窒化アルミ層)を被覆した表面に連続層のAgよりなるAg層を成膜したのち、熱処理をすることにより、該連続層のAgよりなるAg層中のAgをAg粒子に変化させて作製することができる。
【0015】
得られた波長選択ガラスは、TV放送、衛星放送、携帯電話それぞれの周波数帯域の電波に対して反射率を低減させて、電波障害を防止するとともに、充分な日射遮蔽性能と可視光線透過性を有する電波透過性波長選択ガラスである。
【0016】
前記波長選択ガラスの反射率(Rdp)は、下記(2)式で示されるような理論式により、銀の形状から算出することができる。
(この理論式は、本発明者が、Journal of Applied Physics Volume 84, Number 11, 6285−8290(1998)ですでに発表している。)
【0017】
【式2】
【0018】
ここで、
Rdp: 電波透過性波長選択ガラスの反射率
λ : 電波透過性波長選択ガラスに入射する電磁波の波長[nm]
AR: Ag粒子が占める面積率
Rms: 厚みDのAg粒子の反射率
D : Ag粒子の平均厚み [nm]
Esg: 分割係数
(板ガラス基板、または誘電体膜上に無限繰り返しに配列した
完全導体からなる正方形セグメントの長さと入射光の波長の
比がLi/λ、前記セグメントが占める面積率がARの系の
反射率)
Li: Ag粒子の粒径 [nm]
Sr: 粒径LiのAg粒子の面積率
ni: 粒径LiのAg微粒子の数
以下に、本発明の波長選択ガラスの反射率(Rdp)が、上記(2)式で示される理論式により、銀の形状から算出することができることを、以下に示す式(3)〜(14)により説明する。
【0019】
以下、順を追って、完全導体セグメントを誘電体基板上に周期的に固定した系の反射率を算出する電気的な積分方程式を導く方法について説明する。
先ず、理論式による分割係数Esgの求め方について説明する。
(1)誘起電流分布
下記の計算では、導電体セグメントおよび誘電体基板からの放射が電磁界を誘起すると仮定する。
【0020】
ここで論ずる周期アレーと電磁波の状態を図1に幾何学的に示す。x軸、y軸の周期単位a、bそれぞれの無限周期アレーを誘電体基板上に固定する。基板の厚さはd、誘電率はεrである。(θi,φi)方向から伝搬してきた電界強度Eiの入射平面波で、周波数選択スクリーンを照射すると仮定する。αは、(θi,φi)面内での偏波角である。
【0021】
【式3】
【0022】
電流Jcは、入射波によって導電体表面に誘起されると仮定する。この電流は入射波の位相に比例する。そして構造が周期的であるので、電流はフーリエ級数展開が可能である。従って、電流分布は次のように表現できる。
【0023】
【式4】
【0024】
【式5】
【0025】
【式6】
【0026】
任意形状の導電体はワイヤーセグメントで電気的に近似できる。
電流分布は区分的正弦波(PWS)函数で表現できる。
【0027】
【式7】
【0028】
【式8】
【0029】
(2)放射界(反射電界と反射磁界)
散乱体表面の誘起磁流・誘起電流が放射する電界を反射電界という。この反射電界は、グリーン函数を用いると式(9)で表現できる。
【0030】
【式9】
【0031】
(3)電力反射率
【0032】
【式10】
【0033】
【式11】
【0034】
【式12】
【0035】
以上、分割係数Esgの求め方について説明した。
次に、(2)式の粒径分布(Ag粒子の粒径、面積率、粒子の数)について求める。
(4)Ag粒子の平均粒径
【0036】
【式13】
【0037】
Ag粒子の平均粒径(l)は次のように計算できる。
【0038】
【式14】
【0039】
後述の実施例2で述べるように、近赤外域の遮蔽効率が0.3以上を確保するためには、Ag粒子の平均粒径が10nm以上およびAg粒子の厚みが5nm以上であることが好ましい。なお、Ag粒子の平均粒径が0.5mm以上になると電波障害の問題が発生するので好ましくない。
次に、前記で示した分割係数Esgと粒径分布から反射率を求める方法について説明する。
(5)Ag粒子より構成されるAg層を積層したAlN層の反射率の理論式
Ag層の反射率は、銀原子のプラズマ振動の影響を受ける。それ故、銀を分散させたAlN層の反射率(Rdp)は表面抵抗率(Rsq)、入射波の波長(λ)と銀の粒径に依存する。Rdpに対する粒径の影響を、分割係数(Esg)の項で表現する。
【0040】
厚さ40nmのAlN層上に完全導体の正方形セグメントを周期的に固定した系の反射率の理論値をEsgと定義する。理論値は、式(12)を用いて算出する。この係数は、L/λと面積率(AR)に依存する。L/λは、セグメントの大きさ(Ag粒子の粒径に対応する)と図2に示した入射光の波長の比である。なお、図2は、AR=22/32の分割係数(Esg)とL/λ(セグメントの大きさと入射光の波長の比を示す図である。
【0041】
ARは、L/a、すなわちセグメントの面積と図1に示した単位セル(最小繰り返し単位)の面積の比である。AR=2/3(=0.444)にもかかわらず、図2のEsgはL/λ=0.525で、1.0に近づく。これは、導体のRsqと基板の誘電損率が無視できるほどに小さい場合、共鳴周波数において入射波のエネルギーが単位セル上の誘起電流に全て変換されることに起因する。
Rdpは、R ms とEsgの積に等しいと仮定して、Rdpを求める式(2)を提案する。R ms はAlN(30nm)/Ag(Dnm)/AlN(10nm)多層膜の反射率である。なお、DはAg粒子の平均厚みである。
【0042】
【式2】
【0043】
ここで、
R dp : 電波透過性波長選択ガラスの反射率
λ : 電波透過性波長選択ガラスに入射する電磁波の波長[nm]
AR: Ag粒子が占める面積率
R ms : 厚みDの銀膜の反射率
D : Ag粒子の平均厚み [nm]
Esg : 分割係数
(板ガラス基板、または誘電体膜上に無限繰り返しに配列した
完全導体からなる正方形セグメントの長さと入射光の波長の
比がL i /λ、前記セグメントが占める面積率がARの系の
反射率)
L i :Ag粒子の粒径 [nm]
S r :粒径Li のAg粒子の面積率
n i :粒径L i のAg微粒子の数
【0044】
【式15】
【0045】
ここで、ARoは、薄膜の全面積に対するAg粒子の占める割合である。RmsはRsqとλの函数である。そして、EsqはL/λに依存するので、式(2)は、RdpがRsq、λとLに依存することを示している。Σの項はAg粒子の粒径分布のRdpへの影響を描写している。 図2に示したように、L/λの増大に対するEsqの変化が非線形のため、Σの項が必要である。
【0046】
AlN層中のAgの全重量は、Ag層の熱処理の間一定に保たれるので、DとLは、式(16)と(17)で表現できる。
【0047】
【式16】
【0048】
【式17】
【0049】
ここで、Lm は、セグメントの平均長さ、D0は、成膜直後の多層膜中のAg層の厚さである。
なお、Agは紫外線領域にプラズマ振動数が存在し、さらに、この周波数の低周波数側に、「銀の窓」と呼ばれるAgの消衰係数が無限小になる領域があるので、Ag粒子の厚みと、誘電体干渉膜の膜厚を制御すれば、可視光の透過性が確保できる。
【0050】
加熱によりAg層は、粒子状に分散した状態に変化する。この粒径は、前記した0.5mmよりはるかに小さく、また、Ag膜の厚み、熱処理条件などを制御することより、近赤外線を選択的に反射するガラスが得られる。
【0051】
【実施例】
以下、本発明の実施の1例を述べる。但し、本発明は、これに限定するものではない。
実施例1
電波透過性波長選択ガラスは、DCマグネトロン・スパッタリング法により成膜した。
(1)スパッタリング前に、真空槽を2×10-4Paまで真空引きした。
なお、スパッタリング中、ターゲット−ガラス基板間の距離は90mmに固定した。
(2)最下層のAlN層は、純Alターゲット(直径129mm、厚み10mm)を用いて、反応スパッタで堆積させた。なお、異常放電を防止するために、周波数10kHzの矩形パルス波をカソードに印加した。スパッタリング中、N2/Arガス流量比を20/80に調整する方法で混合ガスの圧力を0.7Paに制御した。
(3)アルゴンのガス圧0.7Paで、純Agターゲット(直径129mm、厚み5mm)を用いて、中間層のAg層を堆積させた。
(4) 最上段のAlN層を積層する前に、スパッタリング真空槽内で、成膜直後のAlN/Ag層を2×10-4Pa、200℃で加熱処理した。
(5)最上層のAlN層は、最下層のAlN層と同じ方法により、純Alターゲット(直径129mm、厚み10mm)を用いて、反応スパッタで堆積させた。
【0052】
前記(3)或いは(4)の工程を終了したガラス基板/AlN層/Ag層からなるサンプルについて、下記に示す方法により、Ag粒子の粒径分布の測定を行った。
A.Ag粒子の粒径分布
(4)の工程を終了したガラス基板/AlN層/Ag層からなるサンプルの表面の状態を、日立S−415を用いた走査型電子顕微鏡(SEM)で観察した結果を図3に示す。
なお、図3の各粒子の大きさをMartin法で読み取った粒径分布を表1に示す。
【0053】
結果、面積比(Ag粒子が占める面積と全面積の比と定義)は0.20であった。
表1の粒径(l)と数(n)を式(13)と(14)に代入した結果、平均粒径は87nmとなった。粒径分布は、表2にSrの関数として示す。
【0054】
(4)の工程を終了したガラス基板/AlN層/Ag層からなるサンプルの表面の状態を、セイコ製SPAー250を用いた原子間力顕微鏡(AFM)にて観察した結果、平均粒子径は168nmで、面積率は0.38であった。
【0055】
【表1】
【0056】
【表2】
【0057】
B.結晶の配向性
前記(3)および(4)の工程を終了したガラス基板/AlN層/Ag層からなるサンプルについて、銀結晶の配向性を評価した。なお、測定は、CuKαの特性X線を用い理学製RINT−1500のX線回折(XRD)法で測定した。
【0058】
結果、(3)の工程が終了した成膜直後のガラス基板/AlN層/Ag層のサンプルにおけるAg層は、基板に平行にAg(111)面が成長した多結晶銀を含むことを示している。また、(4)の工程の熱処理を行うことにより、前記図3で示すようにAg連続層が不連続な粒子に変化すると、Ag(200)面の回折ピークの強度は多少増加した。また、表3は、Ag(111)面の面間隔が2時間の熱処理の結果、236.6から235.9pmに減少することを示している。ピークの半値幅もまた減少する傾向を示した。
【0059】
【表3】
【0060】
C.反射率
(3)の工程が完了した成膜直後の試料と、(4)の工程を完了した熱処理試料の反射率スペクトルを測定した。
なお、反射スペクトルは日立製340分光光度計を用いて、室温で、350から1800nmの範囲で測定した結果を図4に示す。
【0061】
Ag層の厚さを(3)の工程が完了した成膜直後の試料の反射率曲線から求める。4端子マトリックス法で計算した反射率の理論曲線は、図5に示したように、成膜直後のAg層の厚さが8nmのとき、測定値とよく一致した。
なお、図5は、成膜直後の試料の実験値(○)と理論値(ー)との反射スペクトルの比較を示した図である。理論値は、Ag層の厚さを8nmと仮定して計算した。
【0062】
一方、表3で、加熱時間が0時間のAg(111)ピークの半値幅を式(18)[Scherrerの式]に代入して成膜直後のAg層中の結晶の厚みを求めた結果、その値は10nmとなった。Ag層の厚さは、結晶の大きさに等しいことになる。すなわち、Ag層は基板に平行なAg(111)面が成長した多結晶銀から構成されていることを示している。
【0063】
【式18】
【0064】
ここで、CT : 結晶の厚み [Å]
λ : 照射X線の波長[Å]
Δ(2θ): 半値幅 [radian]
θ : X線の入射角度[radian]
図4に示した(4)の工程を完了した熱処理試料の反射率曲線から、Ag層の熱処理によって波長が780nmより小さい入射波の反射率は増大し、780nmより長い入射波の反射率は減少することが示された。この現象は、粒径が入射波の波長より小さいAg粒子の分散によると考えられる。
図6に示した曲線は、Ag粒子の面積平均粒径130nm、Ag粒子の厚み18nm、面積率0.444の波長選択膜の反射率について350nm〜1800nmの波長範囲で、理論式(2)から求めた理論曲線である。この曲線は、図6に黒丸で示した実施例の値とよく一致している。ところが、表4に示したように、SEMで観測した平均粒径は、理論粒径より小さい値である。この差は、SEM観察では銀の粒径を過小に見積もることに原因がある。すなわち、Ag層の厚さ約3nmの粒子の裾野から散乱された2次電子の強度は弱いので、粒子の裾野として検出できなかったためと考えられる。また、表4に示したようにAg層の厚みはX線的に求めた測定値と一致する。本実施例で、理論式(2)の妥当性が証明できた。
【0065】
【表4】
【0066】
実施例2
実施例1で、理論式(2)の妥当性が証明できたので、式(2)の理論値から、波長選択膜に適したAg粒子の形状を求める。
先ず、Ag粒子より構成されるAg層の遮弊効率(Es)は式(1)で定義される。
式(2)のSrはセグメントの種々の平均サイズ(Li)に対して一定であると仮定して、AR=0.444、D0=8nmのAg粒子系の最大遮蔽効率を式(2)で計算する。図7に示したようにLi=375nmのとき、可視光および放送波領域で、断熱ガラスの透明性を確保しながら、遮蔽効率は最大となる。
なお図7は、Ag粒子系の遮弊効率とセグメントの平均サイズを示す図である。遮弊効率は、AR=22/32、Di=18nmと仮定して、式(2)から算出した。
Di=375nmの反射スペクトルの理論曲線を図9に示す。
Ag粒子分散AlN膜で、375nmの理論反射スペクトル(−)とLm=130nmの測定反射スペクトル(●)の比較を示す図である。理論値はAR=22/32、Li=18nmと仮定して、式(2)から算出した。
【0067】
Lm=Liが130nmから375nmまで増大することにより、反射が最大となる位置は、長波長側にシフトする。これは、近赤外線のみを反射する波長選択スクリーンはAg粒子の大きさを調整することにより設計できることを示している。
反射率の理論値は、800nm以下の波長域で5〜6箇所鋭く減少している。セグメントは周期的に配列されているので、図2の場合、L/λ=0.626で反射率が鋭く減少する。
【0068】
次に、代表例として、Ag粒子の平均粒径が375nmの場合の波長選択ガラスの近赤外域の遮蔽効率および可視光の透過率のAg粒子の厚み依存性を理論式(2)から求めた結果を表5と表6に示す。なお、面積率は、代表値として0.444と0.826を用いた。
【0069】
表5と表6より、近赤外域の遮蔽効率が0.3以上を確保するためには、Ag粒子の厚みが5nm以上必要であることがわかる。一方、Ag粒子の厚みが30nmを越えると近赤外域の遮蔽効率は、可視光の透過性を有しながら飽和に達する。
【0070】
式(18)のScherrerの式から求められるAg層の厚さは、Agの(111)面の回折ピークの半値幅に逆比例するので、Ag層の厚さの測定限界は、半値幅の検出限界値で決まる。この値は、現在のX線回折装置では、0.01度程度である。この値を式(18)に代入すると、1μmとなる。すなわち、Scherrerの式は、Ag層の厚さが1μm以下の場合にのみ適応できる。従って、Ag層の好ましい厚みは、5nm〜1μmの範囲である。なお、CuKαの特性X線の波長は、1.5405Å、Agの(111)面に対応するX線の入射角度は、38.12/2度である。
【0071】
【表5】
【0072】
【表6】
【0073】
代表例として、Ag粒子の厚みが20nmの場合の波長選択ガラスの近赤外域の遮蔽効率および可視光透過率のAg粒子の面積平均粒径依存性を理論式(2)から求めた結果を表7と表8に示す。表7、および表8より、近赤外域の遮蔽効率が0.3以上を確保するためには、Ag粒子の粒径が100nm以上必要であることがわかる。粒径の増大に伴い遮蔽効率は増大するが、面積率によって異なるが、ある粒径以上になると減少する。しかし、遮蔽効率が0.3以下にはならない。ところが、粒径が、現在使用されている放送波の内、最も波長の短い衛星放送波の波長の1/20以上になると電波障害が問題となる(特許登録番号2620456参照)ので、Ag粒子の粒径は0.5mm以下が望ましい。
【0074】
【表7】
【0075】
【表8】
【0076】
【発明の効果】
本発明は、TV放送、衛星放送、携帯電話それぞれの周波数帯域の電波に対して反射率を低減させるとともに、充分な日射遮蔽性能と可視光線透過性を有するので、TV画面にゴーストを発生させたり、携帯電話が通じなくなったり、或いはガラスアンテナの利得が悪くなったり等の電波障害がなく、且つ日射を充分に遮蔽される等快適な生活をすることが可能である。
【図面の簡単な説明】
【図1】散乱体の幾何学的図面を示す。
【図2】AR=22/32の分割係数(Esg)とL/λ(セグメントの大きさと入射光の波長の比)との関係を示す図である。
【図3】銀分散AlN層のSEM顕微鏡写真を示す図である。
【図4】熱処理前後の反射率を示す図である。
【図5】成膜直後の試料の実験(○)と理論(−)反射スペクトルの比較を示す図である。
【図6】銀分散AlN膜の反射スペクトルの実験値(●)と理論値(−)比較を示す図である。
【図7】Ag粒子系の遮蔽効果とセグメントの平均サイズとの関係を示す図である。
【図8】Ag粒子分散AlN膜で、Lm=375nmの理論反射スペクトル(−)と
Lm=130nmの測定反射スペクトル(●)の比較を示す図である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wavelength-selective glass that can efficiently transmit radio waves and visible rays arriving on a window glass of a building, an automobile, etc., and can exhibit sufficient heat insulation properties by reflecting solar heat rays.
[0002]
[Prior art]
In recent years, for the purpose of shielding solar radiation, window glass coated with a conductive thin film or attached with a film containing the conductive thin film has begun to spread. When such a window glass is applied to a high-rise building, radio waves in the TV frequency band are reflected, causing a ghost on the TV screen and making it difficult to receive satellite broadcasts with an indoor antenna. In addition, when used as a window glass for a house or a window glass for an automobile, there is a possibility that the mobile phone may become difficult to communicate, or the gain of the glass antenna may be deteriorated.
[0003]
Under such circumstances, at present, the glass substrate is covered with a transparent heat ray reflective film having a relatively high electrical resistance to partially transmit visible light and to reduce radio wave reflection to prevent radio interference. Has been done.
[0004]
In the case of glass with a conductive film, the length of the conductive film parallel to the direction of the electric field of the incident radio wave is 1/20 times or less the wavelength of the radio wave. Japanese Patent No. 2620456 discloses that it is divided into two parts to prevent radio interference.
[0005]
[Problems to be solved by the invention]
However, the conventional method of coating a transparent heat ray reflective film having a relatively high electrical resistance can reduce radio wave reflection and prevent radio wave interference, but the heat ray shielding performance is not sufficient, and the comfort of life There was a problem. In addition, the method of dividing the conductive film disclosed in Japanese Patent No. 2620456 is much longer than the wavelength of visible light and near infrared light that occupy most of sunlight, so that these light beams are divided. However, there is a problem in that visible light transmittance cannot be secured, although a radio wave transmissive wavelength selection screen glass having sufficient solar radiation shielding performance and preventing radio wave interference can be obtained. Furthermore, in a large window such as the size of the opening of 2 m × 3 m, for example, in order to transmit satellite broadcast waves, 1/20 of the wavelength of satellite broadcast is about 1/20, at least the conductive film is 1.25 mm square, Preferably it must be cut to 0.5 mm square. In order to cut a large-area conductive film into such small segments with, for example, an yttrium-aluminum-garnet laser, there is a problem that it takes a long time and is not practical.
[0006]
[Means for Solving the Problems]
The present invention has been studied in view of the above-mentioned conventional problems, and reduces the reflectance with respect to radio waves in each frequency band of TV broadcasting, satellite broadcasting, and mobile phones, and prevents radio interference, An object of the present invention is to provide a radio wave transmissive wavelength selective glass having sufficient solar radiation shielding performance and visible light transmittance.
That is, a radio wave transmitting wavelength selective glasses of the present invention, the glass substrate surface or AlN layer on a glass substrate to the coated surface (aluminum nitride layer), made by stacking Ag layer composed of Ag particles, Ag particles, the average particle size 100Nm~0. 5 mm, radio wave transmitting wavelength selective glass, characterized in that the range of thickness 5nm~1μm of Ag layer.
[0008]
[0009]
Further, the Ag layer composed of Ag particles is preferably formed by forming an Ag layer consisting of a continuous layer by sputtering and then changing it to Ag particles by heat treatment. Ag of the Ag particles produced by heat-treating the Ag layer is made by reducing the half-value width of the Ag (111) plane identified by the X-ray diffraction method to 85% or less as compared with Ag before heat treatment. It is preferable.
[0010]
Furthermore, an AgN layer (aluminum nitride layer) may be coated on an Ag layer composed of Ag particles , and the reflectivity of the radio wave transmissive wavelength selective glass has a maximum value in a wavelength range of 600 nm to 1500 nm. It is preferable to have.
[0011]
Moreover, it is preferable that the shielding efficiency (Es) of the near-infrared region defined by Formula (1) is 0.3 or more.
[0012]
[Formula 1]
[0013]
here,
λ: Wavelength of electromagnetic wave incident on radio wave transmission wavelength selection glass R dp : Reflectance of radio wave transmission wavelength selection glass I sr : Radiation intensity of the sun at air mass 1.0 Further, the radio wave transmission wavelength selection glass of the present invention The manufacturing method is composed of Ag particles by forming an Ag layer composed of a continuous layer on the surface of the glass substrate by sputtering or coating the AlN layer (aluminum nitride layer) on the glass substrate, followed by heat treatment. that is a process for preparing a radio wave transmitting wavelength selective glasses Ag layer to generate characterized by comprising.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
The radio wave transmitting wavelength-selective glass of the present invention is obtained by coating an Ag layer composed of Ag particles on a glass substrate surface or a surface coated with an AlN layer (aluminum nitride layer) on a glass substrate, As a typical production method, an Ag layer made of continuous Ag is formed on the surface of the glass substrate or the surface of the glass substrate coated with an AlN layer (aluminum nitride layer) by sputtering, and then heat treatment is performed. Thus, the Ag in the Ag layer made of Ag in the continuous layer can be produced by changing to Ag particles .
[0015]
The resulting wavelength selective glass reduces the reflectivity of radio waves in each frequency band of TV broadcast, satellite broadcast, and mobile phone to prevent radio wave interference, as well as sufficient solar radiation shielding performance and visible light transmittance. It has a radio wave transmission wavelength selection glass.
[0016]
The reflectance (R dp ) of the wavelength selective glass can be calculated from the shape of silver by a theoretical formula as shown by the following formula (2).
(This theoretical formula has already been published by the inventor in Journal of Applied Physics Volume 84, Number 11, 6285-8290 (1998).)
[0017]
[Formula 2]
[0018]
here,
R dp: reflectance of a radio wave transmitting wavelength selective glass lambda: the wavelength of electromagnetic wave incident on the radio wave transmitting wavelength selective glass [nm]
AR: Area ratio occupied by Ag particles R ms : Reflectance of Ag particles of thickness D: Average thickness of Ag particles [nm]
E sg : Division factor
(Arranged infinitely on a flat glass substrate or dielectric film.
Of the length of the square segment consisting of a perfect conductor and the wavelength of the incident light
The ratio is L i / λ, and the area ratio occupied by the segment is AR.
Reflectivity)
L i : Ag particle diameter [nm]
S r: the area ratio of Ag particles having a particle size L i
ni: Number of Ag fine particles having a particle diameter L i Below, the reflectance (R dp ) of the wavelength selective glass of the present invention can be calculated from the shape of silver by the theoretical formula shown by the above formula (2). Will be described by the following formulas (3) to (14).
[0019]
In the following, a method for deriving an electrical integral equation for calculating the reflectance of a system in which perfect conductor segments are periodically fixed on a dielectric substrate will be described.
First, how to obtain the division coefficient Esg using a theoretical formula will be described.
(1) Induced Current Distribution In the following calculation, it is assumed that radiation from the conductor segment and the dielectric substrate induces an electromagnetic field.
[0020]
The periodic array and electromagnetic wave state discussed here are shown geometrically in FIG. An infinite periodic array of x-axis and y-axis period units a and b is fixed on the dielectric substrate. The thickness of the substrate is d, and the dielectric constant is εr. Assume that the frequency selective screen is irradiated with an incident plane wave of electric field strength E i propagating from the (θ i , φ i ) direction. α is a polarization angle in the (θ i , φ i ) plane.
[0021]
[Formula 3]
[0022]
It is assumed that the current Jc is induced on the conductor surface by the incident wave. This current is proportional to the phase of the incident wave. And since the structure is periodic, the current can be expanded in Fourier series. Therefore, the current distribution can be expressed as follows.
[0023]
[Formula 4]
[0024]
[Formula 5]
[0025]
[Formula 6]
[0026]
Arbitrary shaped conductors can be electrically approximated by wire segments.
The current distribution can be expressed by a piecewise sine wave (PWS) function.
[0027]
[Formula 7]
[0028]
[Formula 8]
[0029]
(2) Radiation field (reflected electric field and reflected magnetic field)
The electric field radiated by the induced magnetic current / induced current on the scatterer surface is called a reflected electric field. This reflected electric field can be expressed by Equation (9) using the Green function.
[0030]
[Formula 9]
[0031]
(3) Power reflectivity [0032]
[Formula 10]
[0033]
[Formula 11]
[0034]
[Formula 12]
[0035]
The method for obtaining the division coefficient E sg has been described above.
Next, it calculates | requires about the particle size distribution (The particle size of Ag particle , an area rate, the number of particles) of (2) Formula.
(4) Average particle diameter of Ag particles
[Formula 13]
[0037]
The average particle diameter (l) of Ag particles can be calculated as follows.
[0038]
[Formula 14]
[0039]
As described in Example 2 below, in order to shield the efficiency of the near-infrared region to secure a 0.3 or higher, it is preferable that the thickness of the average particle diameter of 10nm or more and Ag particles Ag particles is 5nm or more . Note that if the average particle size of Ag particles is 0.5 mm or more, a problem of radio interference occurs, which is not preferable.
Next, a method for obtaining the reflectance from the above-described division coefficient Esg and particle size distribution will be described.
(5) Theoretical formula of the reflectance of the AlN layer in which an Ag layer composed of Ag particles is laminated The reflectance of the Ag layer is affected by the plasma vibration of silver atoms. Therefore, the reflectance (R dp ) of the AlN layer in which silver is dispersed depends on the surface resistivity (R sq ), the wavelength (λ) of the incident wave, and the silver particle size. The influence of the particle size on R dp is expressed in terms of the division factor (E sg ).
[0040]
The theoretical value of the reflectance of a system in which a square segment of a complete conductor is periodically fixed on an AlN layer having a thickness of 40 nm is defined as E sg . The theoretical value is calculated using Equation (12). This coefficient depends on L / λ and the area ratio (AR). L / λ is the ratio of the segment size (corresponding to the particle size of the Ag particles ) and the wavelength of the incident light shown in FIG. Incidentally, FIG. 2 is a diagram showing the ratio of the wavelength of the AR = 2 2/3 2 of division factor (E sg) and L / lambda (segment size and the incident light.
[0041]
AR is L / a, that is, the ratio of the area of the segment to the area of the unit cell (minimum repeating unit) shown in FIG. Despite AR = 2/3 (= 0.444), E sg in FIG. 2 is L / λ = 0.525, which approaches 1.0. This is because when the R sq of the conductor and the dielectric loss factor of the substrate are small enough to be ignored, the energy of the incident wave is completely converted into the induced current on the unit cell at the resonance frequency.
R dp is assumed to be equal to the product of R ms and E sg, we propose a formula (2) for obtaining the R dp. R ms is the reflectivity of the AlN (30 nm) / Ag (D nm) / AlN (10 nm) multilayer film. D is the average thickness of Ag particles.
[0042]
[Formula 2]
[0043]
here,
R dp : reflectance of radio wave transmitting wavelength selective glass
λ: Wavelength [nm] of electromagnetic wave incident on radio wave transmissive wavelength selective glass
AR: Area ratio occupied by Ag particles
R ms : reflectivity of silver film with thickness D
D: Average thickness of Ag particles [Nm]
E sg : Division factor
(Arranged infinitely on a flat glass substrate or dielectric film.
Of the length of the square segment consisting of a perfect conductor and the wavelength of the incident light
The ratio is L i / λ, and the area ratio occupied by the segment is AR.
Reflectivity)
L i : Particle diameter of Ag particles [Nm]
S r: the area ratio of Ag particles having a particle size L i
n i : Number of Ag fine particles having a particle diameter L i
[Formula 15]
[0045]
Here, AR o is the ratio of Ag particles to the total area of the thin film. R ms is a function of R sq and λ. Since E sq depends on L / λ, equation (2) shows that R dp depends on R sq , λ, and L. The term Σ depicts the effect of the Ag particle size distribution on R dp . As shown in FIG. 2, since the change in E sq with respect to the increase in L / λ is non-linear, a Σ term is necessary.
[0046]
Since the total weight of Ag in the AlN layer is kept constant during the heat treatment of the Ag layer, D and L can be expressed by equations (16) and (17) .
[0047]
[Formula 16]
[0048]
[Formula 17]
[0049]
Here, Lm is the average length of the segment, D 0 is the thickness of the Ag layer in the multilayer film immediately after deposition.
Since Ag has a plasma frequency in the ultraviolet region, and there is a region called “silver window” where the extinction coefficient of Ag is infinitesimal on the lower frequency side of this frequency, the thickness of Ag particles If the film thickness of the dielectric interference film is controlled, it is possible to ensure visible light transmission.
[0050]
By heating, the Ag layer changes to a dispersed state in the form of particles. The particle size, the above-mentioned much smaller than 0.5 mm, The thickness of the Ag film, than to controlling the heat treatment conditions, glass is obtained which selectively reflects near infrared.
[0051]
【Example】
An example of the implementation of the present invention will be described below. However, the present invention is not limited to this.
Example 1
The radio wave transmissive wavelength selective glass was formed by a DC magnetron sputtering method.
(1) The vacuum chamber was evacuated to 2 × 10 −4 Pa before sputtering.
During sputtering, the distance between the target and the glass substrate was fixed at 90 mm.
(2) The lowermost AlN layer was deposited by reactive sputtering using a pure Al target (diameter 129 mm, thickness 10 mm). In order to prevent abnormal discharge, a rectangular pulse wave with a frequency of 10 kHz was applied to the cathode. During sputtering, the pressure of the mixed gas was controlled to 0.7 Pa by adjusting the N2 / Ar gas flow rate ratio to 20/80.
(3) An intermediate Ag layer was deposited using a pure Ag target (diameter: 129 mm, thickness: 5 mm) at an argon gas pressure of 0.7 Pa.
(4) Before laminating the uppermost AlN layer, the AlN / Ag layer immediately after film formation was heat-treated at 2 × 10 −4 Pa and 200 ° C. in a sputtering vacuum chamber.
(5) The uppermost AlN layer was deposited by reactive sputtering using a pure Al target (diameter 129 mm, thickness 10 mm) by the same method as the lowermost AlN layer.
[0052]
About the sample which consists of the glass substrate / AlN layer / Ag layer which completed the process of said (3) or (4), the particle size distribution of Ag particle | grains was measured by the method shown below.
A. Particle size distribution of Ag particles The state of the surface of the sample consisting of the glass substrate / AlN layer / Ag layer after the step (4) was observed with a scanning electron microscope (SEM) using Hitachi S-415. The results are shown in FIG.
The particle size distribution obtained by reading the size of each particle in FIG.
[0053]
As a result, the area ratio (defined as the ratio of the area occupied by Ag particles to the total area) was 0.20.
As a result of substituting the particle size (l) and the number (n) in Table 1 into the formulas (13) and (14), the average particle size was 87 nm. The particle size distribution, as a function of S r in Table 2.
[0054]
As a result of observing the surface state of the sample consisting of the glass substrate / AlN layer / Ag layer after the step (4) with an atomic force microscope (AFM) using a Seiko SPA-250, the average particle size is At 168 nm, the area ratio was 0.38.
[0055]
[Table 1]
[0056]
[Table 2]
[0057]
B. Crystal orientation The silver crystal orientation was evaluated for the sample consisting of the glass substrate / AlN layer / Ag layer after the steps (3) and (4). In addition, the measurement was performed by the X-ray diffraction (XRD) method of RINT-1500 made by Rigaku using the characteristic X-ray of CuKα.
[0058]
As a result, it is shown that the Ag layer in the glass substrate / AlN layer / Ag layer sample immediately after film formation after the step (3) includes polycrystalline silver having an Ag (111) plane grown parallel to the substrate. Yes. Further, when the Ag continuous layer was changed to discontinuous particles as shown in FIG. 3 by performing the heat treatment in the step (4), the intensity of the diffraction peak on the Ag (200) plane slightly increased. Table 3 also shows that the spacing of the Ag (111) plane decreases from 236.6 to 235.9 pm as a result of heat treatment for 2 hours. The half width of the peak also showed a tendency to decrease.
[0059]
[Table 3]
[0060]
C. Reflectance The reflectance spectra of the sample immediately after film formation after the step (3) and the heat-treated sample after the step (4) were measured.
In addition, the reflection spectrum measured in the range of 350 to 1800 nm at room temperature using a Hitachi 340 spectrophotometer is shown in FIG.
[0061]
The thickness of the Ag layer is obtained from the reflectance curve of the sample immediately after film formation after the step (3) is completed. The theoretical curve of the reflectance calculated by the four-terminal matrix method agreed well with the measured value when the thickness of the Ag layer immediately after film formation was 8 nm, as shown in FIG.
FIG. 5 is a diagram showing a comparison of reflection spectra between the experimental value (◯) and the theoretical value (−) of the sample immediately after film formation. The theoretical value was calculated on the assumption that the thickness of the Ag layer was 8 nm.
[0062]
On the other hand, in Table 3, the half width of the Ag (111) peak with a heating time of 0 hour was substituted into Equation (18) [Scherrer's equation] to determine the thickness of the crystal in the Ag layer immediately after film formation. The value was 10 nm. The thickness of the Ag layer is equal to the crystal size. That is, the Ag layer is composed of polycrystalline silver grown with an Ag (111) plane parallel to the substrate.
[0063]
[Formula 18]
[0064]
Where CT: crystal thickness [Å]
λ: wavelength of irradiated X-ray [Å]
Δ (2θ): Half width [radian]
θ: X-ray incident angle [radian]
From the reflectance curve of the heat-treated sample that has completed step (4) shown in FIG. 4, the reflectance of incident waves having a wavelength smaller than 780 nm increases and the reflectance of incident waves longer than 780 nm decreases due to the heat treatment of the Ag layer. Was shown to do. This phenomenon is considered to be due to dispersion of Ag particles whose particle size is smaller than the wavelength of the incident wave.
The curve shown in FIG. 6 is from the theoretical formula (2) in the wavelength range of 350 nm to 1800 nm with respect to the reflectance of the wavelength selective film of Ag particle area average particle size 130 nm, Ag particle thickness 18 nm, and area ratio 0.444. It is the calculated theoretical curve. This curve is in good agreement with the values of the example shown by the black circles in FIG. However, as shown in Table 4, the average particle diameter observed by SEM is smaller than the theoretical particle diameter. This difference is caused by the underestimation of the silver particle size in SEM observation. That is, it is considered that the secondary electrons scattered from the bottom of the particle having a thickness of about 3 nm of the Ag layer were weak and could not be detected as the bottom of the particle. Further, as shown in Table 4, the thickness of the Ag layer coincides with the measured value obtained by X-ray. In this example, the validity of the theoretical formula (2) was proved.
[0065]
[Table 4]
[0066]
Example 2
In Example 1, since the validity of the theoretical formula (2) was proved, the shape of Ag particles suitable for the wavelength selective film is obtained from the theoretical value of the formula (2).
First, the shielding efficiency (Es) of an Ag layer composed of Ag particles is defined by equation (1).
Assuming that S r in equation (2) is constant for various average sizes (Li) of the segments, the maximum shielding efficiency of an Ag particle system with AR = 0.444, D 0 = 8 nm is given by equation (2) ) To calculate. As shown in FIG. 7, when L i = 375 nm, the shielding efficiency is maximized while ensuring the transparency of the heat insulating glass in the visible light and broadcast wave regions.
FIG. 7 is a graph showing the shielding efficiency and average segment size of the Ag particle system. Saegihei efficiency, assuming AR = 2 2/3 2, Di = 18nm, was calculated from the equation (2).
The theoretical curve of the reflection spectrum at Di = 375 nm is shown in FIG.
It is a figure which shows the comparison of the theoretical reflection spectrum (-) of 375 nm and the measurement reflection spectrum (-) of Lm = 130 nm with an Ag particle-dispersed AlN film . Theoretical values assuming AR = 2 2/3 2, L i = 18nm, was calculated from the equation (2).
[0067]
As L m = L i increases from 130 nm to 375 nm, the position where the reflection is maximized is shifted to the long wavelength side. This indicates that a wavelength selection screen that reflects only near infrared rays can be designed by adjusting the size of Ag particles.
The theoretical value of the reflectance decreases sharply in 5 to 6 places in the wavelength region of 800 nm or less. Since the segments are periodically arranged, in the case of FIG. 2, the reflectance decreases sharply at L / λ = 0.626.
[0068]
Next, as a typical example, to obtain an average particle size of thickness dependence of shielding efficiency and the visible light transmittance of the Ag particles in the near-infrared region of the wavelength selective glass in the case of 375nm of Ag particles from the theoretical formula (2) The results are shown in Tables 5 and 6. In addition, the area ratio used 0.444 and 0.826 as a representative value.
[0069]
From Tables 5 and 6, it can be seen that the thickness of the Ag particles needs to be 5 nm or more in order to ensure the shielding efficiency in the near infrared region of 0.3 or more. On the other hand, when the thickness of the Ag particles exceeds 30 nm, the shielding efficiency in the near infrared region reaches saturation while having visible light transmittance.
[0070]
Since the thickness of the Ag layer obtained from the Scherrer equation of equation (18) is inversely proportional to the half width of the diffraction peak of the (111) plane of Ag , the measurement limit of the thickness of the Ag layer is the detection of the half width. Determined by the limit value. This value is about 0.01 degrees in the current X-ray diffractometer. Substituting this value into equation (18) yields 1 μm. That is, Scherrer's equation is applicable only when the thickness of the Ag layer is 1 μm or less. Therefore, the preferable thickness of the Ag layer is in the range of 5 nm to 1 μm. The wavelength of the characteristic X-ray of CuKα is 1.5405 mm, and the incident angle of the X-ray corresponding to the (111) plane of Ag is 38.12 / 2 degrees.
[0071]
[Table 5]
[0072]
[Table 6]
[0073]
As a representative example, the results of calculating the near-infrared shielding efficiency and the visible light transmittance dependency of the area average particle size of Ag particles from the theoretical formula (2) when the thickness of the Ag particles is 20 nm are shown. 7 and Table 8. From Table 7 and Table 8, it can be seen that the Ag particle size needs to be 100 nm or more in order to secure the shielding efficiency in the near infrared region of 0.3 or more. The shielding efficiency increases as the particle size increases, but it varies depending on the area ratio, but decreases when the particle size exceeds a certain particle size. However, the shielding efficiency does not become 0.3 or less. However, particle size, of the broadcast wave currently being used, since radio interference becomes a problem becomes the most 1/20 or less of the wavelength of the satellite wave wavelengths (see Patent Registration No. 2620456), the Ag particles The particle size is desirably 0.5 mm or less.
[0074]
[Table 7]
[0075]
[Table 8]
[0076]
【The invention's effect】
The present invention reduces the reflectance with respect to radio waves in the frequency bands of TV broadcasting, satellite broadcasting, and mobile phones, and has sufficient solar shading performance and visible light transmission, so that ghosts are generated on the TV screen. It is possible to have a comfortable life, such as being free from radio interference such as a cellular phone becoming inaccessible or a gain of a glass antenna being deteriorated, and being sufficiently shielded from sunlight.
[Brief description of the drawings]
FIG. 1 shows a geometric drawing of a scatterer.
2 is a diagram showing the relationship between the AR = 2 2/3 2 of division factor (E sg) and L / lambda (the ratio of the wavelength of the segment size and the incident light).
FIG. 3 is a view showing an SEM micrograph of a silver-dispersed AlN layer.
FIG. 4 is a diagram showing reflectivity before and after heat treatment.
FIG. 5 is a diagram showing a comparison between an experiment (◯) and a theoretical (−) reflection spectrum of a sample immediately after film formation.
FIG. 6 is a diagram showing a comparison between an experimental value (●) and a theoretical value (−) of a reflection spectrum of a silver-dispersed AlN film.
FIG. 7 is a diagram showing the relationship between the shielding effect of an Ag particle system and the average size of segments.
FIG. 8 is a diagram showing a comparison between a theoretical reflection spectrum (−) at Lm = 375 nm and a measured reflection spectrum (●) at Lm = 130 nm in an Ag particle-dispersed AlN film.
Claims (7)
【式1】
ここで、λ:電波透過性波長選択ガラスに入射する電磁波の波長
Rdp:電波透過性波長選択ガラスの反射率
Isr:エアーマス1.0における太陽の放射強度The radio wave transmission wavelength selective glass according to any one of claims 1 to 5, wherein a shielding efficiency (Es) in a near infrared region defined by the formula (1) is 0.3 or more.
[Formula 1]
Where λ is the wavelength of the electromagnetic wave incident on the radio wave transmission wavelength selection glass
R dp : reflectivity of radio wave transmitting wavelength selective glass
I sr : Solar radiation intensity at air mass 1.0
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| JP09059799A JP3734376B2 (en) | 1999-03-31 | 1999-03-31 | Radio wave transmissive wavelength selective glass and manufacturing method thereof |
| US09/451,855 US6395398B1 (en) | 1999-03-31 | 1999-12-01 | Frequency selective plate and method for producing same |
| US10/095,431 US6689256B2 (en) | 1999-03-31 | 2002-03-13 | Frequency selective plate and method for producing same |
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| WO2011152169A1 (en) | 2010-06-03 | 2011-12-08 | 富士フイルム株式会社 | Heat-ray shielding material |
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| US6673462B2 (en) | 2001-04-27 | 2004-01-06 | Central Glass Company, Limited | Frequency selective plate and method for producing same |
| JP4371690B2 (en) * | 2003-04-11 | 2009-11-25 | セントラル硝子株式会社 | Radio wave transmissive wavelength selective plate and method for producing the same |
| JP5044979B2 (en) * | 2006-05-09 | 2012-10-10 | 凸版印刷株式会社 | Film sensor and glass structure |
| JP2014156358A (en) * | 2011-06-10 | 2014-08-28 | Asahi Glass Co Ltd | Optical film and glass laminate |
| JP6136166B2 (en) * | 2012-09-28 | 2017-05-31 | 豊田合成株式会社 | Decorative product having plasmon film and method for producing the same |
| JP2022057984A (en) * | 2020-09-30 | 2022-04-11 | 日亜化学工業株式会社 | Light-emitting member, manufacturing method therefor, optical member, and light-emitting device |
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| WO2011152169A1 (en) | 2010-06-03 | 2011-12-08 | 富士フイルム株式会社 | Heat-ray shielding material |
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