JP3744467B2

JP3744467B2 - Vacuum arc deposition method and apparatus

Info

Publication number: JP3744467B2
Application number: JP2002162728A
Authority: JP
Inventors: 泰夫村上; 隆司三上; 潔緒方
Original assignee: Nissin Electric Co Ltd
Current assignee: Nissin Electric Co Ltd
Priority date: 2002-06-04
Filing date: 2002-06-04
Publication date: 2006-02-08
Anticipated expiration: 2022-06-04
Also published as: JP2004010921A

Description

【０００１】
【発明の属する技術分野】
本発明は、例えば自動車部品、機械部品、工具、金型等の基材の耐摩耗性を向上するための薄膜形成に用いる真空アーク蒸発方法及びその装置に関する。
【０００２】
【従来の技術】
一般に、真空アーク蒸着は、陰極と陽極の間にアーク放電を生じさせ、陰極材料を蒸発させて基材に蒸着するという簡便な薄膜形成方法であり、生産性に優れるという特徴を持つ。
【０００３】
しかし、陰極材料から（放電状態によっては陰極からも）、直径が数μｍにもなる大きな固まりの粗大粒子（ドロップレット）が飛出し、このドロップレットが基材に付着して成膜特性が劣下することが知られている。
【０００４】
このドロップレットによる成膜特性の劣下を防止するため、近年、電磁コイル等の磁石により磁場を発生し、この磁場によってドロップレットを除去してプラズマ流だけを磁場に沿って基材方向に輸送したり、前記磁場でプラズマを集束させて高密度化することによってドロップレットを溶解することが提案されている。
【０００５】
そして、ドロップレットを除去してプラズマ流だけを基材方向に輸送する従来の真空アーク蒸着は、本出願人の既出願に係る特開平２００１−５９１６５号公報（Ｃ２３Ｃ１４／３２）等に記載されているように、ほぼ図９の平面図に示す構造に形成される。
【０００６】
この図９の従来装置において、成膜室１を形成する金属製の接地された真空容器２は、図示省略した真空排気装置によって右側の排気口３から排気され、左側のガス導入口４から、場合によっては、アルゴンガス等の不活性ガスや反応性ガスが導入される。
【０００７】
また、前記公報においては、成膜室１の円筒形のホルダに基材を複数個取付けた構造が示されているが、図９においては、説明を簡単にするため、成膜室１のほぼ中央に平板状の１個のホルダ５が、その表面を前方に向けて、かつ、回転自在に設けられ、このホルダ５の表面側に基材６が着脱自在に保持される。
【０００８】
この基材６はホルダ５を介してバイアス電源７の陰極に接続され、基材６が真空容器２に対して代表的には−０．５ｋＶ〜−５．０ｋＶに直流パルスバイアスされる。
【０００９】
なお、図中の８はバイアス電源７の陰極を絶縁する真空容器２の後面板２′の絶縁体である。
【００１０】
つぎに、真空容器２の前方にほぼ「ノ」の字状に湾曲した断面矩形の金属製のダクト９が設けられ、このダクト９は、前側一端の接地された端板９′の中央部に絶縁体１０を介して蒸発源１１が設けられ、この蒸発源１１に陽極接地の数１０Ｖ程度のアーク電源１２の陰極が接続され、ダクト９が陽極、蒸発源１１が陰極を形成する。
【００１１】
なお、ダクト９を陽極に兼用する代わりに、ダクト９と別個に陽極電極が設けられることもある。
【００１２】
また、蒸発源１１は、図示省略した水冷機構、真空シール機構、トリガ機構等も備える。
【００１３】
さらに、ダクト９の他端が真空容器２の前面板２″の中央部に取付けられ、ダクト９の他端の放出口１３が成膜室１に連通し、このとき、放出口１３の左右方向（水平方向）の放出面の中心がホルダ５、基材６の中心に重なる。
【００１４】
つぎに、ダクト９の両端間の複数個所それぞれにダクト９を囲んだ磁石として、例えばダクト９の一端側から順の＃１，＃２，＃３，＃４の電磁コイル１４ａ，１４ｂ，１４ｃ，１４ｄが設けられる。
【００１５】
このとき、放出口１３に最も近い＃４の終端磁石としての電磁コイル１４ｄ及び＃１〜＃３の他の磁石の電磁コイル１４ａ〜１４ｃは、それぞれ複数ターンのコイルからなり、同じ大きさ（寸法）である。
【００１６】
また、電磁コイル１４ｄは、２点鎖線のダクト９の延長方向に直角なダクト９の横断面にほぼ平行に設けられて放出口１３の放出面に平行であり、残りの各電磁コイル１４もそれぞれの位置でダクト９の横断面にほぼ平行に設けられる。
【００１７】
そして、各電磁コイル１４ａ〜１４ｄは電流源としてのコイル電源１５の出力両端間に直列接続され、制御装置１６の電流制御によって、各電磁コイル１４ａ〜１４ｄの通電が制御され、この制御に基づく各電磁コイル１４ａ〜１４ｄの通電により、ダクト９に沿って湾曲した図中の実線矢印ループの偏向磁場１７ａが形成され、この磁場１７ａが磁気フィルタ１８ａを形成する。
【００１８】
そして、陽極であるダクト９と陰極である蒸発源１１との間の真空アーク放電により、蒸発源１１のＴｉ，Ｃｒ，Ｍｏ，Ｔａ，Ｗ，Ａｌ，Ｃｕのような単体金属、ＴｉＡｌのような合金或いはＣ等の導電体の陰極材料１９が蒸発する。
【００１９】
さらに、アーク放電によって生成された電子及び陰極材料１９のイオンを含んだ破線矢印のプラズマ流２０ａが偏向磁場１７ａに沿ってダクト９の一端から他端の放出口１３に輸送される。
【００２０】
このとき、蒸発源１１から飛出したドロップレットは、電気的に中性であるか、又は、プラズマ中で負に帯電したりするが、いずれにしても質量が非常に大きいため、偏向磁場１７ａに関係なく直進し、ダクト９の内壁に衝突して除去されて基材６やホルダ５の表面には到達しない。
【００２１】
そして、放出口１３に到達した陰極材料１９のイオンは、バイアス電源７による基材６の大きな負電位のバイアスに基づき、成膜室１に引出されて基材６の表面に飛着し、基材６の表面に陰極材料１９の蒸着膜が成膜される。
【００２２】
なお、陰極材料１９のイオンの引出しに連動してガス導入口４から成膜室１内に反応性ガスを導入すると、このガスが陰極材料１９のイオンと反応し、基材６の表面に、例えば炭化チタンや窒化チタン等の金属化合物薄膜が蒸着される。
【００２３】
【発明が解決しようとする課題】
前記図９の従来装置の真空アーク蒸着においては、終端磁石の電磁コイル１４ｄがダクト９の横断面に平行で放出口１３の放出面及び基材６に平行に設けられるだけでなく、他の電磁コイル１４ａ〜１４ｃも、それぞれの位置でのダクト９の横断面にほぼ平行に設けられる。
【００２４】
一方、一様な磁場中で電子が輸送される状態を考えると、よく知られるように、電荷ｑの電子はつぎの数１の式のローレンツ力Ｆを受ける。
【００２５】
【数１】
Ｆ＝ｑ・（ｖ×Ｂ），（ｖ：電子の磁場に対し垂直な方向の速度、Ｂ：磁場、×：ベクトル積（外積）演算子、・：内積演算子）
【００２６】
そして、このローレンツ力Ｆにより、電子が螺旋状に回転しながら偏向磁場１７ａの磁力線に沿って進み、陰極材料１９のイオンは、この電子に引張られるようにダクト９内を進んで放出口１３に輸送される。
【００２７】
さらに、終端磁石の電磁コイル１４ｄの付近では図１０の（ａ），（ｂ）の実線矢印の磁力線に示すように発散磁場になり、放出口１３に到達した電子やイオンはこの発散磁場に沿って飛行する。
【００２８】
なお、図１０の（ａ），（ｂ）は図９の４個の電磁コイル１４ａ〜１４ｄのうちの１つおきの＃２，＃４の２個の電磁コイル１４ｂ，１４ｄのみ通電した場合の磁力線を示す平面図，右側面図である。
【００２９】
そして、図１０の（ａ），（ｂ）の磁力線に基づく電子の飛行軌跡は、図１１の（ａ），（ｂ）の平面図，右側面図の実線に示すようになる。
【００３０】
すなわち、前記の発散磁場により、電子の基材到達位置は、湾曲の向きに応じて、基材６の中心から左右方向に偏向し、上下方向（垂直方向）に発散する。
【００３１】
ところで、磁場１７ａのような真空湾曲磁場中の電子には、図１２に示すように、磁場ベクトルＢの曲率中心からみて外向きの遠心力Ｆｃｆと内向きの磁場傾斜（勾配）∇Ｂが作用し、つぎの数２の式に示すドリフトが生じる。
【００３２】
【数２】
ｖ（Ｒ）＋ｖ（∇Ｂ）＝（ｍ／ｑ）・（Ｒｃ×Ｂ）／（Ｒｃ²・Ｂ²）・（ｖ（‖）＋ｖ（⊥）²／２），（ｖ（Ｒ）：Ｆｃｆの速度ドリフト、ｖ（∇Ｂ）：（∇Ｂ）の速度ドリフト、ｍ：質量、Ｒｃ：図１２の×印の電子位置での曲率半径、ｖ（‖）：Ｂ方向の速度、ｖ（⊥）：Ｂに直角方向（法線方向）の速度）
【００３３】
なお、数２の式中の外積Ｒｃ×Ｂは、ＲｃをＢに重ねるように回転したときに右ねじが進む方向のベクトルである。
【００３４】
そして、蒸発源１１が上下方向に３個設けられ、上から順の各蒸発源１１が上カソード，中央カソード，下カソードを形成するときは、主に上カソードの電子が磁場Ｂの上向きの湾曲の影響を受け、主に下カソードの電子が磁場Ｂの下向きの湾曲の影響を受け、上カソード，下カソードの電子のドリフト方向は、カソードから基材６方向をみたときのコイル電流の正，逆（時計回り，反時計回り）に応じてつぎの表１に示すようになり、カソードの上下，コイル電流の正逆に対して対称的である。
【００３５】
【表１】

【００３６】
そして、プラズマ２０ａ中のイオンが電子に引張られて飛行する傾向にあることから、前記のドリフトの効果により、イオンの蒸着位置も同様に所期位置からずれる。
【００３７】
そのため、磁気フィルタ１８ａによってドロップレットを除去する従来の真空アーク蒸着にあっては、基材６の所望位置に陰極材料１９の薄膜を蒸着して所期の膜厚に成膜することが困難であり、均一な成膜特性等の所望の成膜特性を得るには十分とはいえない問題点がある。
【００３８】
そして、蒸発源１１の個数等によらず、磁場フィルタの作用でドロップレットを除去するこの種の真空アーク蒸着においては、同様の問題点が生じる。
【００３９】
なお、ダクト９及び電磁コイル１４ａ〜１４ｄが断面矩形の場合、矩形の電磁コイル１４ａ〜１４ｄの磁場特性に基づき、中心部よりも外寄りになる程、磁場の傾斜∇Ｂが大きくなるため、斜め下方向のドリフト速度が大きくなって下方向の発散が大きくなる。
【００４０】
本発明は、とくに磁気フィルタの終端磁石（電磁コイル１４ｄ）よりダクト９の一端側（蒸発源側）の磁石の磁場による前記のドリフトに着目して基材の成膜特性を向上することを課題とし、さらには、陰極材料のイオンの基材到達位置を自由に制御して成膜特性の一層の向上等を図ることも課題とする。
【００４１】
【課題を解決するための手段】
前記の課題を解決するために、本発明の請求項１の真空アーク蒸着方法は、磁気フィルタを形成する各磁石のうちの放出口に最も近い終端磁石より蒸発源側の１又は複数個の指定磁石を、ダクトの横断面に対して傾けて設置し、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変自在にし、指定磁石及び終端磁束の発生磁場により、イオンの飛着方向を制御する。
【００４２】
この場合、磁気フィルタを形成する各磁石のうちの終端磁石以外の１又は複数個の磁石が、ダクトの横断面に対して積極的に傾けてダクトの周囲に設けられ、それらが発生する偏向磁場の方向が、ダクトの横断面にほぼ平行に設ける従来方法の発生磁場方向と異なり、傾きの角度を適当に設定することにより、前記電子やプラズマ流から引出されたイオンの飛行方向が修正されて前記ドリフトが抑制され、陰極材料の基材蒸着位置が前記ドリフトの影響を受けにくくなって成膜特性が向上する。
さらに、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を成膜前及び成膜中に自在に変えることができ、種々の成膜特性の蒸着薄膜を、所期の特性で自在に成膜することができる。
【００４３】
つぎに、請求項２の真空アーク蒸着方法は、請求項１と同様に指定磁石をダクトの横断面に対して傾けて設置するとともに、終端磁石を放出口の放出面に対して傾けて設置することにより、終端磁石の発生磁場も、従来の終端磁石を放出面に平行に設置する場合と異なり、指定磁石及び終端磁石の発生磁場で電子やイオンの飛行方向が修正されて前記ドリフトが抑制され、成膜特性が一層向上する。
【００４８】
そして、請求項１又は２の真空アーク蒸着方法において、各磁石は電磁コイルからなることが実用的で好ましい（請求項３）。
【００４９】
また、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度は自動制御されることが好ましい（請求項４）。
【００５０】
さらに、各磁石が電磁コイルからなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイルのコイル電流を制御することが、成膜特性上からは一層好ましい（請求項５）。
【００５１】
つぎに、蒸発源を複数個にすれば、成膜能力の向上が図れ、複数種類の陰極材料の同時成膜等も行える（請求項６）。
【００５２】
また、各磁石を形成する電磁コイルのコイル電流の向きを一定時間毎に切換えて逆にすれば、電子のドリフト方向を逆転することによって陰極材料のイオン飛着位置を周期的にずらすことができ、大面積の基材の均一蒸着等が可能になる（請求項７）。
【００５３】
つぎに、請求項８の真空アーク蒸着装置は、磁気フィルタの各磁石のうちの放出口に最も近い終端磁石より蒸発源側の１又は複数個の指定磁石を、ダクトの横断面に対して傾けて設置し、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変する手段を備えたものであり、請求項１の蒸着方法を実現するものである。
【００５４】
また、請求項９の真空アーク蒸着装置は、指定磁石を、ダクトの横断面に対して傾けて設置するとともに、終端磁石を、放出口の放出面に対し傾けて設置したものである。
【００５５】
したがって、請求項１，２の蒸着方法に用いられる真空アーク蒸着装置を提供することができる。
【００５７】
そして、請求項８又は９の蒸着装置において、各磁石が電磁コイルからなることが実用的であり（請求項１０）、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度の自動制御手段を備えることが望ましい（請求項１１）。
【００５８】
また、各磁石が電磁コイルからなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイルのコイル電流を制御する手段を備えることが、成膜特性を向上する上からは、一層好ましい（請求項１２）。
【００５９】
さらに、蒸発源が複数個であってもよく（請求項１３）、各磁石を形成する電磁コイルのコイル電流の向きを一定時間毎に切換えて逆にする通電制御手段を備えることが、より一層好ましい（請求項１４）。
【００６０】
【発明の実施の形態】
本発明の実施の形態につき、図１〜図８を参照して説明する。
（１形態）
まず、本発明の実施の１形態につき、図１〜図４を参照して説明する。
図１は図９に対応する真空アーク蒸着装置の平面図であり、図９と同一記号は同一のものを示す。
そして、本発明はダクト９の周囲の終端磁石よりダクト９の一端側（蒸発源１１側）の１又は複数個の磁石を指定磁石とするものであり、この形態にあっては、蒸発源１１から２番目の＃２の磁石を指定磁石とする。
【００６１】
さらに、この指定磁石の電磁コイルを、図中の破線で示したダクト９の横断方向の従来コイル１４ｂでなく、ダクト９の横断面に対して所望角度に積極的に傾けた実線の電磁コイル１４ｂ′により形成する。
【００６２】
なお、図１の２点破線はダクト９の延長方向であり、横断面はそれぞれの位置でのこの延長方向に直角な面であり、湾曲部分においては横断面は曲率中心を通る法線方向の面になる。
【００６３】
そして、ダクト９の湾曲部分に位置する電磁コイル１４ｂ′も、他の電磁コイル１４ａ，１４ｃ，１４ｄと同様、図２の斜視図に示すように矩形枠状に複数ターン巻回して形成される。
【００６４】
一方、図３の（ａ）のダクト取付状態の平面図に示すように、Ｘ軸とこの軸に直角なＹ軸とがなすＸ−Ｙ平面（水平面）において、ダクト９の曲率中心を通る図中の１点鎖線がダクト９の横断面方向である。
【００６５】
また、図３の（ｂ）のダクト取付状態の右側面図に示すように、前記のＹ軸と上下方向のＺ軸とがなすＹ−Ｚ平面（垂直面）において、ダクト９の横断面は１点破線のＺ軸に平行な面である。
【００６６】
そして、電磁コイル１４ｂ′は、図３の（ａ），（ｂ）の１点鎖線の横断面に平行な破線の従来コイル１４ｂの設置状態から、Ｘ−Ｙ平面，Ｙ−Ｚ平面のいずれか一方又は両方において、適当な角度α（Ｘ−Ｙ平面），β（Ｙ−Ｚ平面）傾けた（回転した）図３の（ａ），（ｂ）の実線の状態に設置される。
【００６７】
このとき、角度α，βは事前の荷電粒子軌道解析シミュレーション及び試験蒸着等に基づき、基材６の蒸発位置が基材６の表面中心等の所期位置になるように定められる。
【００６８】
そして、例えば作業員の手作業で電磁コイル１４ｂ′のダクト９への取付け角度等が調整され、電磁コイル１４ｂ′がダクト９の横断面から最適角度α，β傾けて設置される。
【００６９】
この場合、電磁コイル１４ｂ′の発生磁場により、従来磁場１７ａを適当に補正した図１の偏向磁場１７ｂの磁気フィルタ１８ｂが形成される。
【００７０】
そして、磁気フィルタ１８ｂによって生成されたプラズマ流２０ｂの電子やイオンは、電磁コイル１４ｂ′の発生磁場により、ダクト９の湾曲等によるドリフトの影響が打消されて補正される。
【００７１】
そのため、図４の（ａ），（ｂ）の電子軌道の１例の平面図，右側面図に示すように、ダクト９を通って基材６の表面に到達する電子の軌道の中心が、ほぼ基材６表面の中心に一致するように補正され、基材６表面のイオン蒸着位置もほぼ基材６表面の中心に一致して所期位置に蒸着が行われ、成膜特性が向上する。
【００７２】
なお、図４の（ａ），（ｂ）においては、図１１の（ａ），（ｂ）と同様、実線の１つおきの＃２，＃４の２個の電磁コイル１４ｂ′，１４ｄにのみ通電している。
【００７３】
そして、ドリフト補正を一層精度よく行うため、他の電磁コイル１４ａ，１４ｃについても、必要に応じてダクト９の横断面に対して傾けて設ければよい。
【００７４】
その際、各電磁コイルのいずれか１個又は複数個を前記のＸ−Ｙ平面内で傾け、残りの電磁コイルをＹ−Ｚ平面内で傾けてドリフトを補正するようにしてもよい。
【００７５】
（他の形態）
つぎに、本発明の実施の他の形態につき、図５〜図８を参照して説明する。
図５の平面図において、図１と同一符合は同一もしくは相当するものを示し、図１と異なる点は、＃２の指定磁石をダクト９の横断面に対して傾けた電磁コイル１４ｂ′により形成するとともに、＃４の終端磁石を、放出口１３の放出面に平行な従来コイル１４ｄでなく、前記放出面に対して傾けた電磁コイル１４ｄ′により形成した点である。
【００７６】
なお、図５の場合、放出面は図１と同様にＹ−Ｚ面に平行であり電磁コイル１４ｂ′だけでなく、電磁コイル１４ｄ′も例えばＸ−Ｙ平面内，Ｙ−Ｚ平面内のいずれか一方又は両方の平面内で適当な角度傾けてダクト９に取付けられる。
【００７７】
そして、電磁コイル１４ｂ′の磁場補正により軌道修正された電子やイオンが、ダクト９から飛出すときに、電磁コイル１４ｄ′の磁場補正によって更に軌道修正され、ダクト９の湾曲に基づくドリフトの影響が一層良好に抑制される。
【００７８】
具体的には、図６の平面図に示すように、＃２の電磁コイル１４ｂ′により、電子やイオンの軌跡が、破線イから実線ロに移動してダクト９の中央寄りに修正され、＃４の電磁コイル１４ｂ′により、電子やイオンがほぼ後方に直進して基材６の表面中央に到達するようになる。
【００７９】
ところで、電磁コイル１４ｂ′，１４ｄ′は他の電磁コイル１４ａ，１４ｃと大きさが異なっていてもよく、とくに、上下方向の磁場発散を良好に抑えるため、電磁コイル１４ｄ′は他の電磁コイル１４ａ，１４ｂ′，１４ｃより大型にすることが好ましい。
【００８０】
つぎに、具体的な電子軌道解析結果について説明する。
まず、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内（水平面内）で傾けた場合、＃４の電磁コイル１４ｄ′をＸ−Ｙ面内で傾けた場合、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で傾け、かつ、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内（垂直面内）で傾けた場合の電子やイオンの軌跡の１例は、図７の破線ハ，１点破線ニ，実線ホそれぞれに示すようになり、＃２の電磁コイル１４ｂをＸ−Ｙ面内で傾け、かつ、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で傾けたときに、発散が抑制されるとともに上方に修正されて中央寄りになり、最も良好な補正が行われることが確かめられた。
【００８１】
また、＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で１０度傾けた場合（ｉの場合）、＃４の電磁コイル１４ｄ′をＸ−Ｙ面内で１０度傾けた場合（iiの場合）、＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で５度傾けた場合（iii の場合）及び＃２の電磁コイル１４ｂ′をＸ−Ｙ面内で１０度傾けて＃４の電磁コイル１４ｄ′をＹ−Ｚ面内で５度傾けた場合（ivの場合）の電子やイオンの基材６の表面到達位置の中心からのＸ軸，Ｚ軸方向のずれの電子軌道解析値は、図８に示すようになった。
【００８２】
図８において、■はｉの場合、▲はiiの場合、●はiii の場合、×はivの場合のプロット点（蒸着位置の点）であり、◆は横断面方向の電磁コイル１４ｂ，１４ｄを設けた場合の基準プロットである。
【００８３】
この図８からも明らかなように、ivの場合に最も良好な成膜特性が得られることが確かめられた。
【００８４】
なお、図８において、電磁コイル１４ｂ′の通電電流は４０Ａ、電磁コイル１４ｄ′の通電電流は３０Ａとした。
【００８５】
ところで、通常は陰極材料１９を基材６表面の中央部を中心に飛着させて蒸着するように補正すればよいが、基材６によってはその表面中央部から離れた位置を中心に蒸着することが好ましい場合もあり、このような場合は、例えば電磁コイル１４ｂ′につき、その傾きの角度α，βの一方又は両方を目的に応じて設定し、基材６表面の任意の位置を中心に蒸着するようにすればよい。
【００８６】
つぎに、例えば電磁コイル１４ｂ′，１４ｄ′を傾けて設置する場合、電磁コイル１４ｂ′，１４ｄ′をＸ−Ｘ軸の平面内で回動自在に傾ける治具と、電磁コイル１４ｂ′，１４ｄ′をＺ−Ｙ軸の平面内で回動自在に傾ける治具とのいずれか一方又は両方を、電磁コイル１４ｂ′，１４ｄ′毎に、それらの設置角度を自在に可変する手段として設け、事前の試験成膜の結果に基づいて電磁コイル１４ｂ′，１４ｄ′の設置角度を初期設定したり、実際の蒸着中に電磁コイル１４ｂ′，１４ｄ′の設置角度を可変するようにしてもよい。
【００８７】
また、前記形態では各電磁コイルとしたが、これらの磁石はいわゆる永久磁石で形成してもよい。
【００８８】
さらに、基材６が大面積の場合や複数種類の陰極材料を同時に蒸着する場合等には、蒸発源１１を、例えば上下方向に複数個設ければよい。
【００８９】
つぎに、指定磁石又は指定磁石と終端磁石の設置角度は、例えば図９の制御装置１６の代わりに設けた図１，図５の制御装置２４のシーケンス制御，プログラム制御等が形成する自動制御手段により、図示省略した膜厚計による基材６表面の膜厚の計測等に基づき、事前に又は実際の成膜の進行に応じて前記の両治具を自動制御し、この自動制御によって自動設定したり成膜中に自動可変することが、実用的であり、また、成膜作業の効率化等の面からも、好ましい。
【００９０】
さらに、各磁石が電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′からなる場合、制御装置２４の通電制御手段により、前記の膜厚計の計測に基づき、成膜中の電磁コイルの設置角度の制御に連動して各電磁コイルのコイル電流を制御すれば、一層精度の高い成膜が行える。
【００９１】
つぎに、制御装置２４の通電制御手段により、各電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′のコイル電流の向きを一定時間毎に切換えて逆にすれば、電流方向の逆転により、磁場Ｂの勾配∇Ｂの方向は変化しないが、磁場Ｂの方向が反転して変化するため、プラズマ流２３の輸送に作用するドリフト方向が変わり、基材６の表面への陰極材料１９の飛着方向が変化して膜厚分布の一層の均一化を図ることができ、成膜特性が一層向上する。
【００９２】
また、各電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ′のコイル電流を交流電源から得るようにすれば、前記の通電制御手段による切換えを行うことなく、各電磁コイルの電流方向を一定時間毎に逆転することができる。
【００９３】
つぎに、前記形態においては、ダクト９を断面矩形としたが、ダクト９は断面が円形，楕円形等であってもよく、この場合、ダクト９の断面形状に応じて各磁石の断面も円形，楕円形等にすることが好ましい。
【００９４】
また、前記形態においては、１個のダクト９を真空容器２に接続して真空アーク蒸着装置を形成したが、真空容器２に複数のダクトを接続し、各ダクトの終端磁石を、各ダクトの放出口の放出面に対して、それぞれ傾けるようにしてもよい。
【００９５】
さらに、前記形態では説明を簡単にするため、成膜室１内に、１個のホルダ５を設け、１個の基材６を蒸着して成膜するようにしたが、例えば、前記公報に記載のアーク式イオンブレーディング装置のように、成膜室内に円筒形の回転式のホルダを設け、このホルダの各面に基材を保持して複数の基材の真空アーク蒸着を行う場合にも、本発明は同様に適用することができる。
【００９６】
つぎに、終端磁石は、放出口１３と基材６の距離が近いなど成膜条件等によっては、終端磁石を他の磁石より小さくして良好な成膜特性を得ることができる場合もあり、このような場合には、終端磁石を他の磁石より小さくしてもよい。
【００９７】
また、前記形態では湾曲したダクト９を用いた場合について説明したが、ダクト９の代わりに屈曲したダクトを用いた場合にも、本発明は同様に適用することができる。
【００９８】
【発明の効果】
本発明は、以下に記載する効果を奏する。
まず、請求項１の真空アーク蒸着方法の場合、磁気フィルタ１８ｂを形成する各磁石のうちの終端磁石（電磁コイル１４ｄ）より蒸発源１１側の１又は複数個の指定磁石（電磁コイル１４ｂ′）が、ダクト９の横断面に対して積極的に傾けてダクト９の周囲に設けられ、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を可変自在にしたため、ダクト９の横断面に平行に設けられる従来方法とは発生する偏向磁場方向が異なり、傾ける角度を適当に設定することにより、電子やプラズマ流から引出されたイオンの飛行方向を修正してダクト９の磁場等に基づくドリフトを抑制し、陰極材料の基材６蒸着位置がドリフトの影響を極力受けないようにして基材６の表面に均一な薄膜を成膜することができ、成膜特性を向上することができる。
さらに、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度を成膜前及び成膜中に自在に変えることができ、種々の成膜特性の蒸着薄膜を、所期の特性で自在に成膜することができる。
【００９９】
つぎに、請求項２の真空アーク蒸着方法の場合は、指定磁石（電磁コイル１４ｂ′）をダクト９の横断面に対して傾けて設置するとともに、終端磁石（電磁コイル１４ｄ′）を放出口１３の放出面に対して傾けて設置したため、終端磁石の発生磁場も、従来の終端磁石を放出面に平行に設置する場合と異なり、指定磁石及び終端磁石の角度を適当に設定することにより、指定磁石及び終端磁石の発生磁場で電子やイオンの飛行方向を修正して前記ドリフトを抑制することができ、成膜特性を一層向上することができる。
【０１０１】
そして、請求項１の真空アーク蒸着方法において、各磁石は電磁コイル１４ａ，１４ｂ′，１４ｃ，１４ｄ，１４ｄ′からなることが実用的で好ましく（請求項３）、指定磁石の設置角度又は指定磁石及び終端磁石の設置角度は、自動制御されることが好ましい（請求項４）。
【０１０２】
さらに、各磁石が電磁コイル１４ａ〜１４ｄ′からなり、指定磁石の設置角度の制御又は指定磁石及び終端磁石の設置角度の制御に連動して各磁石の電磁コイル１４ａ〜１４ｄ′のコイル電流を制御することが、成膜特性上からは一層好ましい（請求項５）。
【０１０３】
つぎに、蒸発源１１を複数個にすれば、成膜能力の一層の向上を図ることができ、複数種類の陰極材料の同時成膜等も行える（請求項６）。
【０１０４】
また、各磁石を形成する電磁コイル１４ａ〜１４ｄ′のコイル電流の向きを一定時間毎に切換えて逆にすれば、陰極材料１９のイオンの飛着位置を周期的にずらすことができ、大面積の基材６の均一な蒸着成膜を行うことができる（請求項７）。
【０１０５】
つぎに、請求項８〜１４の真空アーク蒸着装置は、前記の各真空アーク蒸着方法を実現する具体的な装置を提供することができる。
【図面の簡単な説明】
【図１】本発明の実施の１形態の真空アーク蒸着装置の平面図である。
【図２】図１の指定磁石としての電磁コイルの斜視図である。
【図３】（ａ），（ｂ）は図２の電磁コイルの傾きを説明する平面図，右側面図である。
【図４】（ａ），（ｂ）は図１の電子到達位置を説明する平面図，右側面図である。
【図５】本発明の実施の他の形態の真空アーク蒸着装置の平面図である。
【図６】図５の電子軌道を説明する平面図である。
【図７】図５の電子軌道を説明する右側面図である。
【図８】基板表面の電子到達位置の説明図である。
【図９】従来装置の平面図である。
【図１０】（ａ），（ｂ）は図９の従来装置の発散磁場説明図の平面図，右側面図である。
【図１１】図９の従来装置の電子到達位置を説明する平面図，右側面図である。
【図１２】図９の従来装置の磁場勾配のドリフト説明図である。
【符号の説明】
１成膜室
６基材
９ダクト
１１蒸発源
１３放出口
１４ａ〜１４ｄ，１４ｂ′，１４ｄ′ 電磁コイル
１７ａ〜１７ｃ偏向磁場
１８ａ〜１８ｃ磁気フィルタ
１９陰極材料
２０ａ〜２０ｃプラズマ流[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum arc evaporation method and apparatus for use in forming a thin film for improving the wear resistance of a substrate such as an automobile part, a machine part, a tool, a mold or the like.
[0002]
[Prior art]
In general, vacuum arc deposition is a simple thin film forming method in which arc discharge is generated between a cathode and an anode, and the cathode material is evaporated and deposited on a base material, and is characterized by excellent productivity.
[0003]
However, from the cathode material (also from the cathode depending on the discharge state), large, coarse particles (droplets) having a diameter of several μm are ejected, and the droplets adhere to the substrate, resulting in poor film formation characteristics. It is known to
[0004]
In recent years, in order to prevent the deterioration of film formation characteristics due to the droplets, a magnetic field is generated by a magnet such as an electromagnetic coil, and the droplets are removed by this magnetic field and only the plasma flow is transported in the direction of the substrate along the magnetic field. In addition, it has been proposed to melt the droplets by focusing the plasma with the magnetic field and increasing the density.
[0005]
Conventional vacuum arc deposition in which droplets are removed and only the plasma flow is transported in the direction of the substrate is described in Japanese Patent Application Laid-Open No. 2001-59165 (C23C 14/32) related to the present applicant's application. As shown in FIG. 9, the structure shown in the plan view of FIG. 9 is formed.
[0006]
In the conventional apparatus of FIG. 9, the metal grounded vacuum vessel 2 forming the film forming chamber 1 is exhausted from the right exhaust port 3 by a vacuum exhaust device (not shown), and from the left gas introduction port 4, In some cases, an inert gas such as argon gas or a reactive gas is introduced.
[0007]
In the above publication, a structure in which a plurality of substrates are attached to a cylindrical holder of the film forming chamber 1 is shown. However, in FIG. A flat plate-like holder 5 is provided in the center so that the surface thereof is directed forward and is rotatable, and the substrate 6 is detachably held on the surface side of the holder 5.
[0008]
The substrate 6 is connected to the cathode of the bias power source 7 through the holder 5, and the substrate 6 is DC pulse biased to the vacuum vessel 2 typically at −0.5 kV to −5.0 kV.
[0009]
In the figure, reference numeral 8 denotes an insulator of the rear plate 2 'of the vacuum vessel 2 that insulates the cathode of the bias power source 7.
[0010]
Next, a metal duct 9 having a rectangular cross section that is curved in a substantially “ノ” shape is provided in front of the vacuum vessel 2, and this duct 9 is provided at the center of the grounded end plate 9 ′ at the front end. An evaporation source 11 is provided via an insulator 10, and a cathode of an arc power supply 12 having a number of tens of volts, which is grounded at the anode, is connected to the evaporation source 11, a duct 9 forms an anode, and the evaporation source 11 forms a cathode.
[0011]
Note that an anode electrode may be provided separately from the duct 9 instead of using the duct 9 as an anode.
[0012]
The evaporation source 11 also includes a water cooling mechanism, a vacuum seal mechanism, a trigger mechanism, and the like that are not shown.
[0013]
Further, the other end of the duct 9 is attached to the central portion of the front plate 2 ″ of the vacuum vessel 2, and the discharge port 13 at the other end of the duct 9 communicates with the film forming chamber 1. The center of the discharge surface in the (horizontal direction) overlaps the center of the holder 5 and the base material 6.
[0014]
Next, as magnets surrounding the duct 9 at a plurality of positions between both ends of the duct 9, for example,

electromagnetic coils

14a, 14b, 14c of # 1, # 2, # 3, # 4 in order from one end side of the duct 9 are arranged. 14d is provided.
[0015]
At this time, the electromagnetic coil 14d as the # 4 terminal magnet closest to the discharge port 13 and the electromagnetic coils 14a to 14c of the other magnets # 1 to # 3 are composed of coils of a plurality of turns, and have the same size (dimensions). ).
[0016]
Further, the electromagnetic coil 14d is provided substantially in parallel to the transverse section of the duct 9 perpendicular to the extending direction of the two-dot chain line duct 9, and is parallel to the emission surface of the emission port 13, and each of the remaining electromagnetic coils 14 is also provided. At a position substantially parallel to the cross section of the duct 9.
[0017]
And each electromagnetic coil 14a-14d is connected in series between the output both ends of the coil power supply 15 as a current source, and electricity supply of each electromagnetic coil 14a-14d is controlled by the current control of the control apparatus 16, and each based on this control When the electromagnetic coils 14a to 14d are energized, a deflection magnetic field 17a of a solid arrow loop in the figure curved along the duct 9 is formed, and this magnetic field 17a forms a magnetic filter 18a.
[0018]
Then, by vacuum arc discharge between the duct 9 serving as the anode and the evaporation source 11 serving as the cathode, a simple metal such as Ti, Cr, Mo, Ta, W, Al, Cu of the evaporation source 11 or TiAl. The cathode material 19 of a conductor such as an alloy or C evaporates.
[0019]
Further, a plasma flow 20a indicated by a broken arrow including electrons generated by arc discharge and ions of the cathode material 19 is transported from one end of the duct 9 to the discharge port 13 at the other end along the deflection magnetic field 17a.
[0020]
At this time, the droplets ejected from the evaporation source 11 are electrically neutral or negatively charged in the plasma, but in any case the mass is very large, so the deflection magnetic field 17a Regardless of whether or not it goes straight, it collides with the inner wall of the duct 9 and is removed, and does not reach the surface of the substrate 6 or the holder 5.
[0021]
Then, the ions of the cathode material 19 that have reached the discharge port 13 are drawn into the film forming chamber 1 based on the bias of the substrate 6 having a large negative potential by the bias power source 7 and land on the surface of the substrate 6. A vapor deposition film of the cathode material 19 is formed on the surface of the material 6.
[0022]
When a reactive gas is introduced into the film forming chamber 1 from the gas inlet 4 in conjunction with the extraction of the ions of the cathode material 19, this gas reacts with the ions of the cathode material 19, and on the surface of the substrate 6. For example, a metal compound thin film such as titanium carbide or titanium nitride is deposited.
[0023]
[Problems to be solved by the invention]
In the vacuum arc deposition of the conventional apparatus shown in FIG. 9, the electromagnetic coil 14d of the terminal magnet is not only provided parallel to the transverse section of the duct 9 and parallel to the discharge surface of the discharge port 13 and the base member 6, but also other electromagnetics. The coils 14a to 14c are also provided substantially parallel to the transverse section of the duct 9 at each position.
[0024]
On the other hand, considering the state in which electrons are transported in a uniform magnetic field, as is well known, electrons of charge q are subjected to Lorentz force F of the following equation (1).
[0025]
[Expression 1]
F = q · (v × B), (v: velocity in the direction perpendicular to the magnetic field of the electron, B: magnetic field, x: vector product (outer product) operator, •: inner product operator)
[0026]
The Lorentz force F causes the electrons to rotate along the magnetic field lines of the deflection magnetic field 17a while rotating spirally, and the ions of the cathode material 19 travel through the duct 9 so as to be pulled by the electrons and enter the discharge port 13. Transported.
[0027]
Further, in the vicinity of the electromagnetic coil 14d of the terminal magnet, a divergent magnetic field is generated as indicated by the magnetic lines of solid arrows in FIGS. 10A and 10B, and electrons and ions that have reached the emission port 13 follow the divergent magnetic field. Fly.
[0028]
10 (a) and 10 (b) show a case where only two

electromagnetic coils

14b and 14d of # 2 and # 4 of the four electromagnetic coils 14a to 14d in FIG. 9 are energized. It is the top view which shows a magnetic field line, and a right view.
[0029]
Then, the flight trajectory of electrons based on the magnetic lines of force in FIGS. 10A and 10B is as shown by the solid lines in the plan view and right side view of FIGS. 11A and 11B.
[0030]
That is, due to the divergent magnetic field, the electron base material arrival position is deflected in the left-right direction from the center of the base material 6 in accordance with the direction of the curvature, and diverges in the vertical direction (vertical direction).
[0031]
By the way, as shown in FIG. 12, an outward centrifugal force Fcf and an inward magnetic field gradient (gradient) ∇B as viewed from the center of curvature of the magnetic field vector B act on electrons in a vacuum bending magnetic field such as the magnetic field 17a. However, the drift shown in the following equation 2 occurs.
[0032]
[Expression 2]
v (R) + v (∇B) = (m / q) · (Rc × B) / (Rc²・ B²) ・ (V (‖) + v (⊥)²/ 2), (v (R): velocity drift of Fcf, v (∇B): velocity drift of (∇B), m: mass, Rc: radius of curvature at the electron position marked with x in FIG. ‖): Speed in the B direction, v (⊥): Speed in the direction perpendicular to the B (normal direction))
[0033]
The outer product Rc × B in the equation 2 is a vector in the direction in which the right-hand thread advances when Rc is rotated so as to overlap R.
[0034]
When three evaporation sources 11 are provided in the vertical direction, and each evaporation source 11 in order from the top forms an upper cathode, a central cathode, and a lower cathode, the electrons of the upper cathode mainly curve upward in the magnetic field B. The electrons of the lower cathode are mainly affected by the downward curvature of the magnetic field B, and the drift direction of the electrons of the upper cathode and the lower cathode is positive of the coil current when viewed from the cathode toward the base 6. It is as shown in the following Table 1 according to the reverse (clockwise, counterclockwise), and is symmetrical with respect to the upper and lower sides of the cathode and the forward and reverse of the coil current.
[0035]
[Table 1]

[0036]
Since ions in the plasma 20a tend to fly while being pulled by electrons, the ion deposition position is similarly deviated from the intended position due to the drift effect.
[0037]
  Therefore, magnetic filter18aIn the conventional vacuum arc vapor deposition in which droplets are removed by the above method, it is difficult to deposit a thin film of the cathode material 19 on a desired position of the substrate 6 to form a desired film thickness. There is a problem that is not sufficient to obtain desired film forming characteristics such as film characteristics.
[0038]
The same problems occur in this type of vacuum arc deposition in which droplets are removed by the action of a magnetic field filter regardless of the number of evaporation sources 11 and the like.
[0039]
In addition, when the duct 9 and the electromagnetic coils 14a to 14d are rectangular in cross section, the gradient ∇B of the magnetic field becomes larger toward the outer side than the center based on the magnetic field characteristics of the rectangular electromagnetic coils 14a to 14d. The downward drift velocity increases and the downward divergence increases.
[0040]
It is an object of the present invention to improve the film forming characteristics of a substrate by paying attention to the drift caused by the magnetic field of the magnet on one end side (evaporation source side) of the duct 9 from the terminal magnet (electromagnetic coil 14d) of the magnetic filter. Furthermore, another object is to further improve the film forming characteristics by freely controlling the position of ions of the cathode material reaching the substrate.
[0041]
[Means for Solving the Problems]
  In order to solve the above-mentioned problem, the vacuum arc deposition method according to claim 1 of the present invention is characterized in that one or a plurality of designations on the evaporation source side from the terminal magnet closest to the discharge port among the magnets forming the magnetic filter. Install the magnet at an angle with respect to the cross section of the duct., Make the installation angle of the designated magnet or the installation angle of the designated magnet and terminal magnet variable,Constant magnetAnd termination fluxThe ion landing direction is controlled by the generated magnetic field.
[0042]
  In this case, one or a plurality of magnets other than the terminal magnet among the magnets forming the magnetic filter are provided at the periphery of the duct while being actively inclined with respect to the transverse section of the duct, and a deflection magnetic field generated by them. Unlike the direction of the magnetic field generated in the conventional method, which is substantially parallel to the transverse section of the duct, the flight direction of ions extracted from the electrons and plasma flow is corrected by appropriately setting the inclination angle. The drift is suppressed, the base material deposition position of the cathode material is less affected by the drift, and the film forming characteristics are improved.
Furthermore, the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet can be changed freely before and during film formation, so that a deposited thin film with various film formation characteristics can be freely formed with the desired characteristics. Can be membrane.
[0043]
  Next, in the vacuum arc vapor deposition method according to claim 2, the specified magnet is installed to be inclined with respect to the transverse section of the duct and the terminal magnet is installed to be inclined with respect to the discharge surface of the discharge port as in the case of claim 1.As a result, the magnetic field generated by the terminal magnet is also different from the case where the conventional terminal magnet is installed parallel to the emission surface, and the flight direction of electrons and ions is corrected by the magnetic field generated by the designated magnet and terminal magnet, thereby suppressing the drift. As a result, the film forming characteristics are further improved.
[0048]
  And claim 1Or 2In the vacuum arc deposition method, it is practical and preferable that each magnet is composed of an electromagnetic coil.(Claim 3).
[0049]
  The installation angle of the designated magnet or the installation angles of the designated magnet and the terminal magnet is preferably automatically controlled.(Claim 4).
[0050]
  Furthermore, each magnet is composed of an electromagnetic coil, and the coil current of the magnet coil of each magnet is controlled in conjunction with the control of the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet. More preferable(Claim 5).
[0051]
  Next, if a plurality of evaporation sources are used, the film forming capability can be improved, and simultaneous film formation of a plurality of types of cathode materials can be performed.(Claim 6).
[0052]
  In addition, if the direction of the coil current of the electromagnetic coil forming each magnet is switched every predetermined time and reversed, the ion landing position of the cathode material can be periodically shifted by reversing the electron drift direction. , Uniform evaporation of large area substrates(Claim 7).
[0053]
  Next, the claim8In the vacuum arc vapor deposition apparatus, one or a plurality of designated magnets on the evaporation source side with respect to the end magnet closest to the discharge port among the magnets of the magnetic filter are inclined with respect to the cross section of the duct.The means for changing the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet is provided, and the vapor deposition method according to claim 1 is realized.
[0054]
  Claims9In the vacuum arc vapor deposition apparatus, the designated magnet is installed to be inclined with respect to the transverse section of the duct, and the terminal magnet is installed to be inclined with respect to the discharge surface of the discharge port.
[0055]
Therefore, the vacuum arc vapor deposition apparatus used for the vapor deposition method of

Claims

1 and 2 can be provided.
[0057]
  And claims8Or9It is practical that each magnet consists of an electromagnetic coil.(Claim 10)It is desirable to provide automatic control means for the designated magnet installation angle or the designated magnet and terminal magnet installation angles.(Claim 11).
[0058]
  Further, each magnet is composed of an electromagnetic coil, and includes means for controlling the coil current of the electromagnetic coil of each magnet in conjunction with the control of the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet. From the viewpoint of improving the film properties, it is more preferable.(Claim 12).
[0059]
  Furthermore, there may be a plurality of evaporation sources.(Claim 13)It is even more preferable to provide an energization control means for switching the direction of the coil current of the electromagnetic coil forming each magnet to be reversed every predetermined time.(Claim 14).
[0060]
DETAILED DESCRIPTION OF THE INVENTION
  An embodiment of the present invention will be described with reference to FIGS.
  (1 form)
  First, an embodiment of the present invention will be described with reference to FIGS.
  FIG. 1 is a plan view of a vacuum arc deposition apparatus corresponding to FIG.9Identical symbols indicate the same.
  In the present invention, one or a plurality of magnets on one end side (evaporation source 11 side) of the duct 9 from the terminal magnet around the duct 9 are designated magnets. The second magnet from # 2 is designated as the designated magnet.
[0061]
Further, the electromagnetic coil of the designated magnet is not the conventional coil 14b in the transverse direction of the duct 9 shown by the broken line in the figure, but the solid electromagnetic coil 14b positively inclined to a desired angle with respect to the transverse section of the duct 9. '.
[0062]
1 is the extending direction of the duct 9, the cross section is a plane perpendicular to the extending direction at each position, and in the curved portion, the cross section is a normal direction passing through the center of curvature. It becomes a surface.
[0063]
And the electromagnetic coil 14b 'located in the curved part of the duct 9 is also formed by winding a plurality of turns in a rectangular frame shape as shown in the perspective view of FIG. 2, like the other

electromagnetic coils

14a, 14c, 14d.
[0064]
On the other hand, as shown in the plan view of the duct mounted state in FIG. 3A, a view passing through the center of curvature of the duct 9 in the XY plane (horizontal plane) formed by the X axis and the Y axis perpendicular to this axis. The middle one-dot chain line is the transverse cross-sectional direction of the duct 9.
[0065]
Further, as shown in the right side view of the duct mounted state in FIG. 3B, the cross section of the duct 9 is in the YZ plane (vertical plane) formed by the Y axis and the vertical Z axis. This is a plane parallel to the one-dot broken line Z-axis.
[0066]
Then, the electromagnetic coil 14b 'is one of the XY plane and the YZ plane from the installation state of the broken line conventional coil 14b parallel to the cross section of the alternate long and short dash line in FIGS. One or both of them are installed in the state of solid lines in FIGS. 3A and 3B inclined (rotated) at appropriate angles α (XY plane) and β (YZ plane).
[0067]
At this time, the angles α and β are determined so that the evaporation position of the base material 6 becomes an intended position such as the center of the surface of the base material 6 based on the simulation of the charged particle trajectory analysis and the test deposition.
[0068]
Then, for example, the attachment angle of the electromagnetic coil 14 b ′ to the duct 9 is adjusted manually by an operator, and the electromagnetic coil 14 b ′ is installed with the optimum angles α and β tilted from the cross section of the duct 9.
[0069]
In this case, the magnetic filter 18b of the deflection magnetic field 17b of FIG. 1 is formed by appropriately correcting the conventional magnetic field 17a by the magnetic field generated by the electromagnetic coil 14b ′.
[0070]
The electrons and ions of the plasma flow 20b generated by the magnetic filter 18b are corrected by the influence of drift due to the curvature of the duct 9 and the like by the magnetic field generated by the electromagnetic coil 14b '.
[0071]
Therefore, as shown in the plan view and right side view of one example of the electron trajectory in FIGS. 4A and 4B, the center of the trajectory of electrons reaching the surface of the substrate 6 through the duct 9 is Correction is made so that it substantially coincides with the center of the surface of the base material 6, and the ion deposition position on the surface of the base material 6 is also substantially coincident with the center of the surface of the base material 6, and deposition is performed at the intended position, thereby improving film formation characteristics. .
[0072]
4 (a) and 4 (b), as in FIGS. 11 (a) and 11 (b), the two electromagnetic coils 14b 'and 14d of # 2 and # 4 in every other solid line are used. Only energized.
[0073]
In order to perform drift correction with higher accuracy, the other electromagnetic coils 14a and 14c may be provided inclined with respect to the transverse section of the duct 9 as necessary.
[0074]
At this time, any one or more of the electromagnetic coils may be tilted in the XY plane, and the remaining electromagnetic coils may be tilted in the YZ plane to correct the drift.
[0075]
(Other forms)
Next, another embodiment of the present invention will be described with reference to FIGS.
In the plan view of FIG. 5, the same reference numerals as those in FIG. 1 indicate the same or corresponding parts. The difference from FIG. 1 is that the # 2 designated magnet is formed by an electromagnetic coil 14 b ′ inclined with respect to the transverse section of the duct 9. In addition, the terminal magnet # 4 is formed not by the conventional coil 14d parallel to the discharge surface of the discharge port 13, but by the electromagnetic coil 14d 'inclined with respect to the discharge surface.
[0076]
In the case of FIG. 5, the emission surface is parallel to the YZ plane as in FIG. 1, and not only the electromagnetic coil 14 b ′ but also the electromagnetic coil 14 d ′ is in either the XY plane or the YZ plane. It is attached to the duct 9 at an appropriate angle in either or both planes.
[0077]
Then, when electrons or ions whose trajectory has been corrected by the magnetic field correction of the electromagnetic coil 14 b ′ jump out of the duct 9, the trajectory is further corrected by the magnetic field correction of the electromagnetic coil 14 d ′, and the influence of drift based on the curvature of the duct 9 is exerted. Even better suppressed.
[0078]
Specifically, as shown in the plan view of FIG. 6, the trajectory of electrons and ions is moved from the broken line A to the solid line B by the # 2 electromagnetic coil 14b ', and corrected toward the center of the duct 9, # The four electromagnetic coils 14 b ′ allow electrons and ions to travel substantially rearward and reach the center of the surface of the substrate 6.
[0079]
By the way, the electromagnetic coils 14b 'and 14d' may be different in size from the other electromagnetic coils 14a and 14c. In particular, the electromagnetic coil 14d 'is used to suppress the magnetic field divergence in the vertical direction. , 14b ′ and 14c are preferably larger.
[0080]
Next, specific electron orbit analysis results will be described.
First, when the # 2 electromagnetic coil 14b 'is tilted in the XY plane (in the horizontal plane), the # 4 electromagnetic coil 14d' is tilted in the XY plane, the # 2 electromagnetic coil 14b 'is An example of the trajectory of electrons and ions when tilting in the XY plane and tilting the # 4 electromagnetic coil 14d 'in the YZ plane (in the vertical plane) is shown by broken lines c, 1 in FIG. As indicated by the dotted broken line D and the solid line E, the divergence occurs when the # 2 electromagnetic coil 14b is tilted in the XY plane and the # 4 electromagnetic coil 14d 'is tilted in the YZ plane. It was confirmed that the best correction was performed by suppressing upwards and correcting upward.
[0081]
Also, when the # 2 electromagnetic coil 14b 'is tilted by 10 degrees in the XY plane (in the case of i), the # 4 electromagnetic coil 14d' is tilted by 10 degrees in the XY plane (in the case of ii) ), When the # 4 electromagnetic coil 14d 'is tilted 5 degrees in the YZ plane (in the case of iii), and the # 2 electromagnetic coil 14b' is tilted 10 degrees within the XY plane, and the # 4 electromagnetic coil Electron trajectory analysis values of deviations in the X-axis and Z-axis directions from the center of the surface arrival position of electrons and ions when 14d ′ is tilted 5 degrees in the YZ plane (in the case of iv) are as follows: As shown in FIG.
[0082]
In FIG. 8, ■ is the case of i, ▲ is the case of ii, ● is the case of iii, x is the plot point (deposition point) in the case of iv, and ◆ is the

electromagnetic coil

14b, 14d in the cross-sectional direction. It is a reference plot when providing.
[0083]
As is clear from FIG. 8, it was confirmed that the best film forming characteristics were obtained in the case of iv.
[0084]
In FIG. 8, the energizing current of the electromagnetic coil 14b 'is 40A, and the energizing current of the electromagnetic coil 14d' is 30A.
[0085]
By the way, normally, the cathode material 19 may be corrected so as to be deposited by being deposited around the center of the surface of the base material 6, but depending on the base material 6, the cathode material 19 is deposited mainly at a position away from the center of the surface. In such a case, for example, one or both of the inclination angles α and β of the electromagnetic coil 14b ′ are set according to the purpose, and an arbitrary position on the surface of the substrate 6 is set as the center. Vapor deposition may be performed.
[0086]
Next, for example, when the electromagnetic coils 14b 'and 14d' are inclined and installed, a jig for tilting the electromagnetic coils 14b 'and 14d' so as to freely rotate in the plane of the XX axis, and the electromagnetic coils 14b 'and 14d'. One or both of the jigs that can tilt freely in the plane of the Z-Y axis is provided for each of the electromagnetic coils 14b 'and 14d' as a means for freely changing their installation angle. The installation angles of the electromagnetic coils 14b 'and 14d' may be initially set based on the result of the test film formation, or the installation angles of the electromagnetic coils 14b 'and 14d' may be varied during actual vapor deposition.
[0087]
Moreover, although it was set as each electromagnetic coil in the said form, you may form these magnets with what is called a permanent magnet.
[0088]
Furthermore, when the base material 6 has a large area or when a plurality of types of cathode materials are vapor-deposited simultaneously, a plurality of evaporation sources 11 may be provided in the vertical direction, for example.
[0089]
Next, the installation angle of the designated magnet or the designated magnet and the terminal magnet is, for example, automatic control means formed by sequence control, program control, etc. of the control device 24 of FIGS. 1 and 5 provided in place of the control device 16 of FIG. Thus, based on the measurement of the film thickness of the surface of the substrate 6 by a film thickness meter (not shown), both the jigs are automatically controlled in advance or in accordance with the progress of actual film formation, and automatically set by this automatic control. It is practical and variable automatically during film formation, and it is also preferable from the viewpoint of improving the efficiency of the film forming operation.
[0090]
Further, when each magnet is composed of

electromagnetic coils

14a, 14b ', 14c, 14d', the energization control means of the control device 24 controls the installation angle of the electromagnetic coil during film formation based on the measurement of the film thickness meter. If the coil current of each electromagnetic coil is controlled in conjunction with this, film formation with higher accuracy can be performed.
[0091]
Next, if the direction of the coil current of each of the

electromagnetic coils

14a, 14b ', 14c, 14d' is switched at regular intervals and reversed by the energization control means of the control device 24, the reversal of the current direction causes the magnetic field B to Although the direction of the gradient ∇B does not change, the direction of the magnetic field B reverses and changes, so that the drift direction acting on the transport of the plasma flow 23 changes, and the landing direction of the cathode material 19 on the surface of the substrate 6 changes. The film thickness distribution can be changed to make the film thickness distribution more uniform, and the film forming characteristics are further improved.
[0092]
Further, if the coil current of each

electromagnetic coil

14a, 14b ', 14c, 14d' is obtained from an AC power source, the current direction of each electromagnetic coil is changed at regular intervals without switching by the energization control means. Can be reversed.
[0093]
Next, in the above-described embodiment, the duct 9 has a rectangular cross section, but the duct 9 may have a circular cross section, an elliptical shape, etc. In this case, the cross section of each magnet also has a circular cross section according to the cross sectional shape of the duct 9. It is preferable to use an oval shape.
[0094]
Moreover, in the said form, although the one duct 9 was connected to the vacuum vessel 2 and the vacuum arc vapor deposition apparatus was formed, a plurality of ducts were connected to the vacuum vessel 2, and the terminal magnet of each duct was connected to each duct. You may make it incline with respect to the discharge | release surface of a discharge port, respectively.
[0095]
Furthermore, in order to simplify the explanation in the above embodiment, one holder 5 is provided in the film forming chamber 1, and one base material 6 is deposited to form a film. As in the case of the described arc ion blading apparatus, when a cylindrical rotary holder is provided in the film forming chamber and the base material is held on each surface of the holder to perform vacuum arc deposition of a plurality of base materials. However, the present invention can be similarly applied.
[0096]
Next, depending on the film forming conditions such as the distance between the discharge port 13 and the substrate 6 being close to the terminal magnet, the terminal magnet may be made smaller than other magnets to obtain good film forming characteristics. In such a case, the terminal magnet may be made smaller than other magnets.
[0097]
Moreover, although the case where the curved duct 9 was used was demonstrated in the said form, this invention can be applied similarly also when using the duct bent instead of the duct 9. FIG.
[0098]
【The invention's effect】
  The present invention has the following effects.
  First, in the case of the vacuum arc vapor deposition method according to claim 1, one or a plurality of ones on the evaporation source 11 side from the terminal magnet (electromagnetic coil 14 d) among the magnets forming the magnetic filter 18 b.SpecifiedA magnet (electromagnetic coil 14b ') is provided around the duct 9 while being actively inclined with respect to the cross section of the duct 9,Because the installation angle of the designated magnet or the installation angle of the designated magnet and terminal magnet can be changed,The direction of the deflecting magnetic field generated is different from that of the conventional method provided in parallel with the transverse section of the duct 9, and the flight direction of the ions extracted from the electrons and the plasma flow is corrected by appropriately setting the tilt angle, thereby the duct 9. It is possible to form a uniform thin film on the surface of the base material 6 by suppressing the drift based on the magnetic field of the material and making the deposition position of the base material 6 of the cathode material less affected by the drift. Can be improved.
Furthermore, the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet can be changed freely before and during film formation, so that a deposited thin film with various film formation characteristics can be freely formed with the desired characteristics. Can be membrane.
[0099]
Next, in the case of the vacuum arc vapor deposition method according to claim 2, the designated magnet (electromagnetic coil 14b ') is installed to be inclined with respect to the transverse section of the duct 9, and the terminal magnet (electromagnetic coil 14d') is attached to the discharge port 13. Unlike the case where the conventional terminal magnet is installed parallel to the discharge surface, the magnetic field generated by the terminal magnet is specified by setting the angle of the specified magnet and the terminal magnet appropriately. The drift direction can be suppressed by correcting the flight direction of electrons and ions with the magnetic field generated by the magnet and the terminal magnet, and the film formation characteristics can be further improved.
[0101]
  And claims1'sIn the vacuum arc deposition method, it is practically preferable that each magnet is composed of

electromagnetic coils

14a, 14b ', 14c, 14d, and 14d'.(Claim 3)The installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet is preferably automatically controlled.(Claim 4).
[0102]
  Furthermore, each magnet consists of electromagnetic coils 14a to 14d ', and the coil current of the electromagnetic coils 14a to 14d' of each magnet is controlled in conjunction with the control of the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet. Is more preferable from the viewpoint of film formation characteristics.(Claim 5).
[0103]
  Next, if a plurality of evaporation sources 11 are used, the film forming capability can be further improved, and a plurality of types of cathode materials can be simultaneously formed.(Claim 6).
[0104]
  Moreover, if the direction of the coil currents of the electromagnetic coils 14a to 14d 'forming each magnet is switched every predetermined time and reversed, the ion landing position of the cathode material 19 can be periodically shifted, resulting in a large area. It is possible to perform uniform vapor deposition of the substrate 6(Claim 7).
[0105]
  Next, the claim8-14The vacuum arc vapor deposition apparatus can provide a specific apparatus for realizing each of the vacuum arc vapor deposition methods.
[Brief description of the drawings]
FIG. 1 is a plan view of a vacuum arc vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view of an electromagnetic coil as a designated magnet in FIG. 1;
FIGS. 3A and 3B are a plan view and a right side view for explaining the inclination of the electromagnetic coil of FIG. 2;
4A and 4B are a plan view and a right side view for explaining an electron arrival position in FIG. 1;
FIG. 5 is a plan view of a vacuum arc deposition apparatus according to another embodiment of the present invention.
6 is a plan view for explaining the electron trajectory of FIG. 5; FIG.
7 is a right side view for explaining the electron trajectory of FIG. 5. FIG.
FIG. 8 is an explanatory diagram of electron arrival positions on the substrate surface.
FIG. 9 is a plan view of a conventional device.
10A and 10B are a plan view and a right side view of a divergent magnetic field explanatory diagram of the conventional apparatus of FIG.
11 is a plan view and a right side view for explaining an electron arrival position of the conventional apparatus of FIG. 9;
12 is an explanatory diagram of magnetic field gradient drift of the conventional apparatus of FIG. 9. FIG.
[Explanation of symbols]
1 Deposition chamber
6 Base material
9 Duct
11 Evaporation source
13 Release port
14a-14d, 14b ', 14d' Electromagnetic coil
17a-17c Deflection magnetic field
18a-18c Magnetic filter
19 Cathode material
20a-20c plasma flow

Claims

From the evaporation source located at one end of the curved or bent duct, the cathode material is evaporated by arc discharge,
Providing a magnet surrounding the duct at each of a plurality of locations of the duct to form a magnetic filter;
The magnetic filter generates a deflection magnetic field inside the duct,
Based on the deflection magnetic field, while removing the coarse particles generated by the evaporation, transport the plasma flow containing the ions of the cathode material from one end of the duct to the other outlet,
The ions of the plasma flow are drawn out from the discharge port to the film forming chamber and land on the substrate of the film forming chamber,
In the vacuum arc deposition method of depositing the cathode material on the substrate,
Among the magnets, one or more designated magnets on the evaporation source side from the end magnet closest to the discharge port are installed to be inclined with respect to the cross section of the duct,
The installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet can be varied,
A vacuum arc deposition method characterized by controlling the ion landing direction by a magnetic field generated by the designated magnet and the terminal magnet .

2. The vacuum arc deposition method according to claim 1, wherein the terminal magnet is installed to be inclined with respect to the discharge surface of the discharge port.

The vacuum arc vapor deposition method according to claim 1 or 2, wherein each magnet comprises an electromagnetic coil.

The vacuum arc deposition method according to claim 1, 2 or 3 , wherein the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet is automatically controlled.

2. Each magnet comprises an electromagnetic coil, and the coil current of the electromagnetic coil of each magnet is controlled in conjunction with the control of the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet. , 2, 3 or 4. Vacuum arc deposition method.

Claim 1, 2, 3, 4 or 5 vacuum arc deposition method, wherein the evaporation source is plural.

The vacuum arc deposition method according to claim 1, 2, 3, 4, 5 or 6 , wherein the direction of the coil current of the electromagnetic coil forming each magnet is reversed every predetermined time.

A film forming chamber provided with a substrate;
A curved or bent duct;
An evaporation source located at one end of the duct and evaporating the cathode material by arc discharge in vacuum;
A discharge port at the other end of the duct communicating with the film forming chamber;
A plasma flow comprising ions of the cathode material is formed by providing a magnet surrounding the duct at each of a plurality of locations of the duct, generating a deflection magnetic field in the duct, and removing coarse particles generated by the evaporation. And a magnetic filter for transporting from one end of the duct to the discharge port,
In a vacuum arc deposition apparatus for extracting the ions of the plasma flow from the discharge port to the film formation chamber and landing on the substrate, and depositing the cathode material on the substrate,
Among the magnets, one or more designated magnets on the evaporation source side from the end magnet closest to the discharge port are installed to be inclined with respect to the cross section of the duct ,
A vacuum arc vapor deposition apparatus comprising means for varying an installation angle of the designated magnet or an installation angle of the designated magnet and the terminal magnet .

9. The vacuum arc deposition apparatus according to claim 8, wherein the terminal magnet is installed to be inclined with respect to the discharge surface of the discharge port.

The vacuum arc deposition apparatus according to claim 8 or 9, wherein each magnet comprises an electromagnetic coil.

The vacuum arc vapor deposition apparatus according to claim 8, 9 or 10 , further comprising automatic control means for setting the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet.

Each magnet is composed of an electromagnetic coil, and includes means for controlling the coil current of the electromagnetic coil of each magnet in conjunction with the control of the installation angle of the designated magnet or the installation angle of the designated magnet and the terminal magnet. claim 8, 9,1 0 or vacuum arc deposition apparatus according 11.

Claim 8, wherein the evaporation source is plurality, 9, 10 1 or 12 vacuum arc vapor deposition apparatus according.

Claim 9, wherein the city with the energization control means to reverse by switching the direction of the coil current of the electromagnetic coil at fixed time intervals to form the respective magnets, 10,11,1 2 or 13, wherein the vacuum arc deposition apparatus.