JP3747502B2 - Amorphous phase-containing coating layer and method for producing the same - Google Patents
Amorphous phase-containing coating layer and method for producing the same Download PDFInfo
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- JP3747502B2 JP3747502B2 JP02107696A JP2107696A JP3747502B2 JP 3747502 B2 JP3747502 B2 JP 3747502B2 JP 02107696 A JP02107696 A JP 02107696A JP 2107696 A JP2107696 A JP 2107696A JP 3747502 B2 JP3747502 B2 JP 3747502B2
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- 239000011247 coating layer Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 37
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 16
- -1 boron ions Chemical class 0.000 claims description 15
- 238000002513 implantation Methods 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000007733 ion plating Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010891 electric arc Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 208000010392 Bone Fractures Diseases 0.000 description 1
- 206010017076 Fracture Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 208000013201 Stress fracture Diseases 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は炭化タングステン基超硬合金等の硬質基体上に窒化チタン被覆を形成してなる複合材料において、その表面特性を決める該被覆層表面の構造を容易に制御する方法に関するものである。
【0002】
【従来の技術】
窒化チタン(TiN)は、高い硬度と、優れた耐酸化性を併せ持つことから、切削工具、金属加工用金型、樹脂等のモールド金型、押し出しダイス、その他機械部品等の広い分野の耐磨耗性被覆として実用化されている。この様な優れた特性を持った窒化チタン被覆層の形成方法としては、熱CVD法、イオンプレーティング法等が、工業的に利用されている。しかしながら摺動特性の面で窒化チタン被覆層は、窒化クロム(CrN)被覆やダイヤモンド状炭素被覆等の材料に比べると、摩擦係数が高い等の面で、十分とは言えなかった。そこで窒化チタン被覆層に種々のイオンを注入し、表面を固くすることで摺動特性を向上させる試みがなされてきたが、優れた耐磨耗性と低い摩擦係数を両立させることができなかった。
【0003】
そこで窒化チタン被覆層の微細組織を制御し、耐磨耗性と摺動特性とを同時に向上させる方法として、窒化チタン被覆層を構成する結晶の粒子を可能な限り微細化し、摩擦中の結晶粒子の損傷をできるだけ小さな規模で生じせしめる方法が種々検討されている。例えば特公平7−68623号公報に示されるように、被覆層を構成するTiCN被覆層及び/あるいはTiN被覆層結晶粒の径が0.5μm以下であれば最適であるとの提案がなされている。
【0004】
更に特開平6−8008号公報や特開平6−8010号公報のように、被覆層の少なくとも一層をTiCN被覆層とし、その構造を粒状と縦長状の組み合わせとすることが耐チッピング性に優れた工具を得るために重要であることを開示している。この様にサブミクロンオーダーのサイズでの結晶粒径制御は数多く提案されている。
【0005】
一方、金属や合金といったセラミックス以外の材料の分野では、材料の非晶質化により、結晶粒界の好ましくない特性(例えば破壊の起点になる、腐食が優先的に発生する等)を避け、優れた特性の構造材料を作り出すことに成功している。しかしながら窒化チタンのようなセラミックスの分野では非晶質化技術を活用している例は少なく、非晶質化する手法そのものがないというのが現状であった。
【0006】
【発明が解決しようとする課題】
本発明は、上記の問題点に鑑み、窒化チタンセラミックス被覆層とも称される如く、セラミックスの一種である窒化チタン被覆層に関し、被覆層が形成された時の微細組織の状態に依存せず、後処理によって被膜の表面構造を制御し、摺動特性を改善する方法を得ることを目的とする。またその手法の実施にあたり、最適な製造条件範囲を提供するものである。
【0007】
【課題を解決するための手段】
本発明では、硬質基体上に公知の手法により形成された窒化チタン被覆層に、一価の硼素イオンのイオン注入を行なって、そのイオン注入可能な最大深さ0.5μmまでの深さの領域中の大部分に粒径1nm以上で20nm以下の大きさの粒状の非晶質相と結晶質相を混在させるようにしたもので、TiN結晶質中に非晶質部をつくりこむようにしたものである。すなわち、窒化チタン被覆層を摩擦係数の低い材料に変えることができる点に特徴がある。この時に非晶質相と結晶質相を含む領域にはTiNとTiB2が含まれている。又、注入時の硼素イオンのエネルギーを100〜300keV、硼素イオンの注入量を5×1017イオン/cm2以上、注入温度を150℃以下とした。
【0008】
【発明の実施の態様】
窒化チタン被覆層の摩擦係数が、窒化クロム被覆層やダイヤモンド状炭素被覆層の摩擦係数に比べて高いのは、窒化チタン被覆層が相手材と擦れる際に、結晶粒界を起点とした微小破壊が生じて硬質の磨耗粉を生じ、これが摺動面に入り込むためであると考えられる。これに対して窒化クロムでは、相手材と擦れる際に窒化クロムの表面に酸化クロムが生じるが、この酸化クロムが粉になりにくく、安定した摺動面を形成することが原因と考えられる。
【0009】
またダイヤモンド状炭素被覆層では、ダイヤモンド状炭素被覆層そのものが非晶質であり、結晶粒界を起点とした破壊が起こらないだけでなく、相手材と擦れる際にダイヤモンド状炭素被覆層の酸化が生じるが、炭素は酸化すると二酸化炭素になって揮発し、磨耗粉そのものが生じないために共削りを起こさないことや、摺動界面に生じる黒鉛構造の炭素が潤滑剤の役割を果たすこと、が考えられる。
【0010】
そこで本発明者らは、窒化チタン被覆層の表面に非晶質相を作り込めば、相手材と擦れる際にも微小破壊が生じることがなく、優れた耐磨耗性と低い摩擦係数を両立させることができると考えた。しかし窒化チタン被覆層の表面にレーザーを照射することで急熱・急冷したり、アルゴンガス等の不活性ガスイオンを例えば100keV程度のエネルギーで注入したりして、表面を非晶質化することは、材料の持つ硬度などの特性を損なうために好ましくないことを見いだした。つまり表面層全体を非晶質化すると、かえって材料の持つ機械的特性を損ねることが明らかとなった。
【0011】
この様な検討を進める中で、本発明者らは、上述した様な好ましくない現象を避けるためには、注入時の一価の硼素イオンのエネルギーを100〜300keV、一価の硼素イオンの注入量を5×1017イオン/cm2以上、注入温度を150℃以下の条件で注入すれば、TiN中に粒状に非晶質相を作り込むことができることを見いだした。一価の硼素イオンの注入エネルギーが低すぎると、硼素がTiNの結晶格子中に注入されないため、好ましくない。
【0012】
最適な一価の硼素イオンの注入量に下限があるのは、これ以下の注入量では、窒化チタン被覆層の結晶構造が非晶質化されないために、好ましくないからと考えられる。また注入温度が150℃以下でなければ、一旦非晶質化した組織が再結晶化し、結晶質の化合物に変化してしまうために好ましくないためであると考えられる。
【0013】
また、一価の硼素イオンのイオン注入による最大深さである0.5μmまでの深さの領域中の大部分にTiNとTiB2とからなると考えられる非晶質相と結晶質相を、粒径が1nm以上、20nm以下の大きさを持った粒状に混在させれば、窒化チタンの持つ優れた機械的特性を活かしながら、非晶質相の持つ優れた特性を活かすことができることを見いだした。
【0014】
この様な粒状の非晶質相は、窒化チタン被覆層の表面からイオン注入可能な深さ0.5μmまでの領域において、その深さ方向の大部分と考えられる領域において存在すればよい。すなわち摺動時には、表面近傍のみがその特性向上に寄与すると考えられるからである。また、非晶質相と結晶質相がいずれも粒径が1nm以上、20nm以下の大きさを持った粒状になっていることで、非晶質相が結晶質相の組織に保持されるという効果が発揮され、非晶質化した層の持つ特性が活かせるため、好ましい。
【0015】
各相の粒の大きさが粒径20nmを越えると、結晶質相、非晶質相のそれぞれの持つ短所が顕著に現れるため、好ましくない。また各相の粒の大きさが粒径1nmを下回ると、結晶質相、非晶質相の区別がなくなり、全体に非晶質化した場合と同じ構造になるため、好ましくない。
【0016】
このように極めて小さな結晶構造や結晶格子の規則性を調べるには、被覆層表面に垂直な方向に断面を作り、透過電子顕微鏡を使って層表面付近の高倍率観察により格子像を撮影する方法が好ましい。また該窒化チタン被覆層の形成方法は、熱CVD法、プラズマCVD法、反応性スパッタリング法、反応性イオンプレーティング法など、各種の公知の手法が利用可能である。この中でもとりわけカソードアーク放電を利用したアークイオンプレーティング法が、基体と被覆層との密着強度が高いため好ましい。なお本発明の詳しい実施方法については、実施例において詳しく説明される。
【0017】
【実施例】
公知のカソードアークイオンプレーティング法を用い、炭化タングステン基超硬合金基材上に、厚さ2μmの窒化チタン被覆層を形成した。この窒化チタン被覆超硬合金試料に対して、イオンの加速電圧100keVで、一価の硼素イオンの注入量を2×1017、5×1017、1×1018イオン/cm2と変えて、一価の硼素イオン注入を実施した。この時に得られた試料につき、透過型電子顕微鏡を用い、窒化チタン被覆層表面付近の結晶構造を調査した。注入量が5×1017イオン/cm2の場合の格子像を図1に示す。
【0018】
この図1で粒状のもの(チタン原子に相当)が規則正しく並んでいる部分(図ではAと示しており黒く規則正しい縞状に見える。)が結晶格子を維持している部位であり、規則性を失っている部分(図では、Bと示しており白っぽく粒状化している。)が非晶質化した部分である。図1の写真より、結晶質の部分、非晶質の部分のいずれも、およそ5nmの粒状になっていると考えられる。なお、図2は図1に上記A,Bを記入して示したものである。
【0019】
また電子線回折で非晶質相と結晶質相の混合した領域での結晶構造は、TiN及びTiB2からの回折パターンが確認され、窒化チタン被覆層への一価の硼素イオン注入によりTiB2が形成されていることが確認されたものと考えられる。なお、イオン注入された一価の硼素イオンは、窒化チタン被覆層中ではTiB2及びBN等の化合物になっていると思われるが、詳細は未解明と云える。
【0020】
同様の観察を一価の硼素イオンの注入量2×1017、1×1018イオン/cm2の場合にも行ったが、注入量が2×1017イオン/cm2では結晶格子の規則性に変化が見られず、非晶質相が生成していないこと、及び注入量が1×1018イオン/cm2では5×1017の場合と同様に粒状の非晶質相が生成していることが、それぞれ確認された。
【0021】
これら3種類の注入量の試料につきピン・オン・ディスク試験で摩擦係数を調べたところ、(但し、相手材(ピン)は窒化硅素焼結体で、荷重1N、 回転数500rpm、回転半径1mm、回転回数2000回とした。)注入なし、2×1017、5×1017、1×1018イオン/cm2のそれぞれで、0.85、0.80、0.42、0.35となり、5×1017イオン/cm2以上の注入により、摩擦係数が未注入窒化チタン被覆層に比べて半分以下になることが確認された。
【0022】
【発明の効果】
以上述べた様に、本発明によると、窒化チタン被覆層を形成した被覆工具、金型等の表面の摩擦係数を低くすることが可能であり、切削加工や鍛造加工時の負荷の低減や、機械部品における摺動特性の改善において極めて有用である。
【図面の簡単な説明】
【図1】100keVで一価硼素イオンを注入した時の、窒化チタン被覆層表面(上方が外表面方向である。但し、外表面は示さず。)付近の透過電子顕微鏡写真である。
【図2】図1にA及びBを記入したものである。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of easily controlling the structure of the surface of a coating layer that determines the surface characteristics of a composite material in which a titanium nitride coating is formed on a hard substrate such as a tungsten carbide base cemented carbide.
[0002]
[Prior art]
Titanium nitride (TiN) has both high hardness and excellent oxidation resistance, so it can be used in a wide range of areas such as cutting tools, metal working molds, resin molds, extrusion dies, and other machine parts. It has been put to practical use as a wearable coating. As a method for forming a titanium nitride coating layer having such excellent characteristics, a thermal CVD method, an ion plating method, and the like are industrially used. However, in terms of sliding characteristics, the titanium nitride coating layer is not sufficient in terms of a high friction coefficient compared to materials such as chromium nitride (CrN) coating and diamond-like carbon coating. Therefore, various attempts have been made to improve the sliding characteristics by implanting various ions into the titanium nitride coating layer and hardening the surface, but it has not been possible to achieve both excellent wear resistance and a low coefficient of friction. .
[0003]
Therefore, as a method of controlling the microstructure of the titanium nitride coating layer and simultaneously improving the wear resistance and sliding characteristics, the crystal particles constituting the titanium nitride coating layer are made as fine as possible, and the crystal particles in friction Various methods have been studied for causing the above-mentioned damage on the smallest possible scale. For example, as disclosed in Japanese Examined Patent Publication No. 7-68623, a proposal has been made that it is optimal if the diameter of the TiCN coating layer and / or TiN coating layer crystal grains constituting the coating layer is 0.5 μm or less. .
[0004]
Furthermore, as disclosed in JP-A-6-8008 and JP-A-6-8010, at least one of the coating layers is a TiCN coating layer, and the structure is a combination of a granular shape and a vertically long shape. It is disclosed that it is important to obtain a tool. In this way, many control methods for the crystal grain size in the submicron order have been proposed.
[0005]
On the other hand, in the field of materials other than ceramics such as metals and alloys, by making the material amorphous, it avoids undesirable characteristics of the grain boundaries (for example, the starting point of fracture, corrosion preferentially occurs, etc.) and excellent We have succeeded in creating structural materials with special characteristics. However, in the field of ceramics such as titanium nitride, there are few examples of utilizing amorphization technology, and there is no actual method for amorphization.
[0006]
[Problems to be solved by the invention]
In view of the above problems, the present invention relates to a titanium nitride coating layer, which is a kind of ceramics, as referred to as a titanium nitride ceramic coating layer, and does not depend on the state of the microstructure when the coating layer is formed, The object is to obtain a method of controlling the surface structure of the coating film by post-treatment and improving the sliding characteristics. In addition, an optimal manufacturing condition range is provided for the implementation of the method.
[0007]
[Means for Solving the Problems]
In the present invention, monovalent boron ions are ion-implanted into a titanium nitride coating layer formed on a hard substrate by a known method, and the ion-implantable region having a maximum depth of 0.5 μm is obtained. A mixture of a granular amorphous phase and a crystalline phase with a particle size of 1 nm or more and 20 nm or less in most of the inside, and an amorphous part in TiN crystalline. It is. That is, the titanium nitride coating layer can be changed to a material having a low friction coefficient. At this time, the region containing the amorphous phase and the crystalline phase contains TiN and TiB 2 . Further, the energy of boron ions at the time of implantation was 100 to 300 keV, the amount of boron ions implanted was 5 × 10 17 ions / cm 2 or more, and the implantation temperature was 150 ° C. or less.
[0008]
BEST MODE FOR CARRYING OUT THE INVENTION
The friction coefficient of the titanium nitride coating layer is higher than the friction coefficient of the chromium nitride coating layer and the diamond-like carbon coating layer. This is thought to be due to the generation of hard wear powder that enters the sliding surface. On the other hand, in the case of chromium nitride, chromium oxide is generated on the surface of the chromium nitride when it is rubbed against the counterpart material, but this chromium oxide is unlikely to be powdered and is considered to be caused by forming a stable sliding surface.
[0009]
In addition, in the diamond-like carbon coating layer, the diamond-like carbon coating layer itself is amorphous, so that not only does the destruction starting from the grain boundary not occur, but also the diamond-like carbon coating layer oxidizes when rubbing against the counterpart material. However, when carbon is oxidized, it becomes carbon dioxide and volatilizes, so that wear powder itself does not occur, so co-cutting does not occur, and carbon of the graphite structure generated at the sliding interface plays a role of lubricant. Conceivable.
[0010]
Therefore, if the present inventors create an amorphous phase on the surface of the titanium nitride coating layer, microfracture does not occur when rubbing against the counterpart material, and both excellent wear resistance and a low coefficient of friction are achieved. I thought I could make it. However, the surface of the titanium nitride coating layer is made amorphous by irradiating the surface with a laser for rapid heating / cooling, or by implanting inert gas ions such as argon gas at an energy of about 100 keV, for example. Has found that it is not preferable because it impairs properties such as hardness of the material. In other words, it has been clarified that if the entire surface layer is made amorphous, the mechanical properties of the material are impaired.
[0011]
In the course of such studies, the present inventors have introduced the monovalent boron ion energy of 100 to 300 keV and the implantation of monovalent boron ions at the time of implantation in order to avoid the undesirable phenomenon as described above. It has been found that an amorphous phase can be formed in a granular form in TiN if the amount is 5 × 10 17 ions / cm 2 or more and the implantation temperature is 150 ° C. or less. If the implantation energy of monovalent boron ions is too low, boron is not implanted into the TiN crystal lattice, which is not preferable.
[0012]
The reason why there is a lower limit to the optimum implantation amount of monovalent boron ions is considered to be that an implantation amount less than this is not preferable because the crystal structure of the titanium nitride coating layer is not amorphized. If the implantation temperature is not 150 ° C. or lower, it is considered that the structure once amorphized is recrystallized and changed into a crystalline compound, which is not preferable.
[0013]
In addition, an amorphous phase and a crystalline phase, which are considered to be composed of TiN and TiB 2 , in most of the region up to a depth of 0.5 μm, which is the maximum depth by ion implantation of monovalent boron ions, It has been found that if the particles having a diameter of 1 nm or more and 20 nm or less are mixed, the excellent characteristics of the amorphous phase can be utilized while utilizing the excellent mechanical characteristics of titanium nitride. .
[0014]
Such a granular amorphous phase may be present in a region considered to be most of the depth direction in a region from the surface of the titanium nitride coating layer to a depth of 0.5 μm where ion implantation is possible. That is, when sliding, only the vicinity of the surface is considered to contribute to the improvement of the characteristics. In addition, both the amorphous phase and the crystalline phase are in a granular form having a particle size of 1 nm or more and 20 nm or less, so that the amorphous phase is held in the crystalline phase structure. This is preferable because the effect is exhibited and the characteristics of the amorphous layer can be utilized.
[0015]
If the grain size of each phase exceeds 20 nm, the disadvantages of each of the crystalline phase and the amorphous phase appear remarkably, which is not preferable. Further, if the size of each phase is less than 1 nm, the distinction between the crystalline phase and the amorphous phase is lost, and the entire structure becomes the same as when it is amorphized.
[0016]
In order to investigate the regularity of such an extremely small crystal structure and crystal lattice, a method is used in which a cross section is made in a direction perpendicular to the surface of the coating layer and a lattice image is taken by high-magnification observation near the layer surface using a transmission electron microscope Is preferred. As a method for forming the titanium nitride coating layer, various known methods such as a thermal CVD method, a plasma CVD method, a reactive sputtering method, and a reactive ion plating method can be used. Among these, the arc ion plating method using cathode arc discharge is particularly preferable because the adhesion strength between the substrate and the coating layer is high. The detailed implementation method of the present invention will be described in detail in Examples.
[0017]
【Example】
Using a known cathode arc ion plating method, a titanium nitride coating layer having a thickness of 2 μm was formed on a tungsten carbide base cemented carbide substrate. For this titanium nitride-coated cemented carbide sample, the amount of monovalent boron ions implanted was changed to 2 × 10 17 , 5 × 10 17 , 1 × 10 18 ions / cm 2 at an ion acceleration voltage of 100 keV, Monovalent boron ion implantation was performed. About the sample obtained at this time, the crystal structure of the titanium nitride coating layer vicinity was investigated using the transmission electron microscope. FIG. 1 shows a lattice image when the implantation amount is 5 × 10 17 ions / cm 2 .
[0018]
In FIG. 1, the part (corresponding to titanium atoms) in which particles are regularly arranged (shown as A in the figure and appearing as black regular stripes) is a part that maintains the crystal lattice, and has regularity. The lost part (shown as B in the figure and granulated whitish) is an amorphous part. From the photograph in FIG. 1, it is considered that both the crystalline part and the amorphous part are approximately 5 nm granular. Note that FIG. 2 shows A and B described above in FIG.
[0019]
The crystal structure of a mixed region of the amorphous phase and the crystalline phase by electron ray diffraction, the diffraction pattern from TiN and TiB 2 is confirmed, TiB 2 by boron ion implantation monovalent into the titanium nitride coating layer It is thought that it was confirmed that was formed. In addition, it is considered that the monovalent boron ions implanted with ions are compounds such as TiB 2 and BN in the titanium nitride coating layer, but the details are unclear.
[0020]
Similar observations were made for monovalent boron ion implantation amounts of 2 × 10 17 ions and 1 × 10 18 ions / cm 2 , but the regularity of the crystal lattice was achieved when the implantation amount was 2 × 10 17 ions / cm 2 . No change was observed, and an amorphous phase was not formed. When the implantation amount was 1 × 10 18 ions / cm 2 , a granular amorphous phase was formed as in the case of 5 × 10 17. Each was confirmed.
[0021]
When the friction coefficient was examined by a pin-on-disk test for these three types of injection amount samples, the counterpart material (pin) was a silicon nitride sintered body, the load was 1 N, the rotation speed was 500 rpm, the rotation radius was 1 mm, The number of rotations was 2000.) No injection 2 × 10 17 , 5 × 10 17 , 1 × 10 18 ions / cm 2 , 0.85, 0.80, 0.42, and 0.35, respectively, 5 × 10 17 ions / cm 2 With the above injection, it was confirmed that the friction coefficient was less than half that of the non-implanted titanium nitride coating layer.
[0022]
【The invention's effect】
As described above, according to the present invention, it is possible to reduce the friction coefficient of the surface of a coated tool, a die or the like on which a titanium nitride coating layer is formed, and the load during cutting or forging can be reduced, This is extremely useful in improving the sliding characteristics of machine parts.
[Brief description of the drawings]
FIG. 1 is a transmission electron micrograph near the surface of a titanium nitride coating layer (upward is the direction of the outer surface, but the outer surface is not shown) when monovalent boron ions are implanted at 100 keV.
FIG. 2 is a diagram in which A and B are entered in FIG.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02107696A JP3747502B2 (en) | 1996-02-07 | 1996-02-07 | Amorphous phase-containing coating layer and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02107696A JP3747502B2 (en) | 1996-02-07 | 1996-02-07 | Amorphous phase-containing coating layer and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09209120A JPH09209120A (en) | 1997-08-12 |
| JP3747502B2 true JP3747502B2 (en) | 2006-02-22 |
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| JP02107696A Expired - Fee Related JP3747502B2 (en) | 1996-02-07 | 1996-02-07 | Amorphous phase-containing coating layer and method for producing the same |
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|---|---|---|---|---|
| JP4666241B2 (en) * | 1998-12-25 | 2011-04-06 | 住友電気工業株式会社 | Sliding member |
| JP5329820B2 (en) * | 2007-03-16 | 2013-10-30 | 富士フイルム株式会社 | Liquid ejection device |
| DE102014217507A1 (en) * | 2014-09-02 | 2016-03-03 | Robert Bosch Gmbh | Valve and method of manufacturing a valve |
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