JP3753603B2 - In-scribe pattern data creation device and in-scribe pattern data creation method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to creation of in-scribe pattern data on a photomask (the same applies to a reticle; hereinafter, generically referred to as a photomask) required when manufacturing a semiconductor device. It is about.
[0002]
[Prior art]
In the manufacture of a semiconductor device, a predetermined region is sequentially patterned with a photomask for each process such as introduction of impurities, formation of an oxide film, opening of a contact hole, and formation of a wiring layer. In this case, it is necessary to arrange various alignment marks for alignment for securing the relative positions between processes, various inspection marks for inspecting positional deviation and processing results, and the like on the photomask.
[0003]
These alignment marks and inspection marks are arranged in the scribe area of the photomask. Conventionally, these alignment marks and inspection marks are arranged for each mark in units of photomasks. In the arrangement, as shown in FIG. 3, a mark area surrounding the mark with a predetermined size is set for each mark to be set as a basic mark, and when there is light shielding data in the scribe area, it corresponds to the mark area to be arranged. It is necessary to delete the light-shielding data in the scribe portion (the arrangement of the basic marks with respect to the photomasks 101 to 103 in FIG. 4). In the arrangement, as shown in FIG. 4, basic marks (photographs) arranged on a photomask (photomask 101 and photomask 103 corresponding to photomask 102 in FIG. 4) used in the preceding and following processes are used. It is necessary to maintain a predetermined positional relationship with each other between the basic marks arranged on the mask 101 to the photomask 103.
[0004]
FIG. 1 shows a work flow up to photomask manufacturing in the prior art. Steps (hereinafter referred to as S) 101 to S108 indicate a general semiconductor device design process to a photomask manufacturing process. That is, after product planning and specification review (S101), a design technology such as a design rule in accordance with a device used such as MOS or bipolar, an operating frequency, etc. is determined (S102), and a suitable process technology is determined (S103). . After the determination of both technologies, logic design (S104), layout design (S105), and design verification (S106) are sequentially performed to complete photomask data of the semiconductor device portion.
[0005]
On the other hand, the pattern data of various basic marks in the scribe is started after the layout design of the semiconductor device is completed, the chip size, the number of impositions on the photomask, etc. are determined and the product information is determined. (S109). Specifically, starting with the creation of the basic mark library, reviewing the placement specifications of the basic marks according to the determined scribe area, actual placement work, post-placement pattern data for the mark placement position, for each photomask Secure the mark shape and mark area, or verify the positional relationship between photomasks.
[0006]
The details of the work flow are shown in FIG. First, basic basic marks are created (S110), and basic mark library registration is performed (S111). Here, the basic mark refers to an individual alignment mark or inspection mark, and is created in accordance with a required mark specification for each process technology or each manufacturing facility.
[0007]
Next, after registering the process specifications such as the number of photomasks to be used, name, and scribe area width (S112), the mark type conforming to each process specification, the number of marks arranged, and the arrangement between marks A basic mark arrangement standard is registered with a set of basic marks and the like necessary for a production line having a positional relationship and a predetermined production facility (S113). As a result of this registration, one set of arrangement reference relating to a series of basic marks necessary for manufacturing a semiconductor device using a predetermined process technology in a predetermined manufacturing line is registered. Note that S110 to S113 can be set in advance separately from the design work of the semiconductor device.
[0008]
When the layout work is completed in the design work of the semiconductor device (S105 in FIG. 1), scribe pattern data is created (S115) in accordance with the type processing information such as the input chip size, imposition number, product name, etc. (S114). The mark name and area to be arranged are read from the basic mark arrangement reference (S116, S117), and an arrangement area is created on the scribe (S118). Then, the mark shape is read into the secured arrangement area (S119), and the mark is arranged on the scribe (S120). Here, if there is pattern data on the scribe, the data in the scribe area corresponding to the mark area to be arranged is deleted. The above processing is performed on all the photomasks for all the marks (S121, S122), and finally, after confirming whether the basic marks meet the arrangement standard (S123), the arrangement of the basic marks in the scribe is performed. Pattern data is completed. The pattern data and the semiconductor device data are combined to create photomask data (S107 in FIG. 1), and the process proceeds to the photomask manufacturing process (S108 in FIG. 1).
[0009]
[Problems to be solved by the invention]
However, in the prior art, when individual basic marks are arranged on a photomask having pattern data on the scribe, it is necessary to delete data on the scribe area at the position of the basic mark area to be arranged. Yes, it is necessary to verify whether or not the deleted area on the scribe matches the basic mark area to be placed. However, since the basic mark is placed on each photomask for each basic mark, verification is performed as a result. There are many basic mark arrangement locations to be performed, and there is a problem that the load for verification is large.
[0010]
In addition, the above-described operation must be performed for each basic mark, and the mark arrangement work load is large, and an arrangement error is likely to occur.
[0011]
Furthermore, it is necessary to maintain a predetermined positional relationship between the positions of the basic marks even between the photomasks. In the conventional technology in which the individual basic marks are individually disposed, the mutual positional relationship is maintained in the predetermined relationship. Is difficult, and human error is likely to be mixed, and there is a problem in arrangement quality, and a large load is required for verification of the arrangement error.
[0012]
Also, the basic mark placement work is done after the layout work, which is the final stage in the design work of the semiconductor device, is completed, and the scribe area is decided after the product processing information such as the chip size, the number of impositions, and the product name is confirmed. Otherwise, the process cannot be started, and even if the design of the semiconductor device is completed, it is not possible to proceed to the next process until the mark placement in the scribe is completed, and it is not possible to efficiently manufacture a photomask. There is.
[0013]
The present invention has been made to solve the problems of the prior art, and when the process technology and manufacturing equipment to be used are determined, the arrangement pattern data of the basic mark group to be arranged in the scribe is made into a library. Accordingly, an object of the present invention is to provide an in-scribe pattern data creation apparatus and an in-scribe pattern data creation method that reduce the load in the photomask data placement work and complete the creation work in a short period of time.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, an in-scribe pattern data creating apparatus according to claim 1 is an in-scribe pattern data creating apparatus for creating in-scribe pattern data on a photomask for manufacturing a semiconductor device. , Arranged for each photomask Basic mark Extract with combinations that are in a predetermined positional relationship with each other Pattern data group To Extraction means and pattern data group The individual basic marks included in each photomask Place When the photomask is overlaid , Placed basic mark Setting means for setting the maximum pattern area including the pattern area of the pattern data group, Individual basic marks included in In the maximum pattern area, and Basic mark In the part excluding the pattern area The same as the scribe data Forming means for additionally forming auxiliary patterns, and auxiliary patterns are additionally formed Pattern data group including basic marks And a pattern data group library registration means for registering the data in the library.
[0015]
In the in-scribe pattern data creation device according to claim 1, the extraction means The pattern data group is extracted from the library in a combination having a predetermined arrangement position relationship among the basic marks arranged for each photomask. However, by setting means, Each basic mark included in the pattern data group is assigned to each photomask. Place and Includes the pattern area of the basic mark that was placed when the photomask was overlaid After setting the maximum pattern area, the pattern data group For each basic mark contained in Included in the maximum pattern area and Basic mark In the part excluding the pattern area The same as the scribe data An auxiliary pattern is additionally formed. Auxiliary patterns are additionally formed by the pattern data group library Pattern data group including basic marks Is registered as a library.
[0016]
According to a third aspect of the present invention, there is provided a method for creating in-scribe pattern data according to claim 3, wherein: , Arranged for each photomask Basic mark Extract with combinations that are in a predetermined positional relationship with each other Pattern data group To Extraction process and pattern data group The individual basic marks included in each photomask Place When the photomask is overlaid , Placed basic mark A setting step for setting a maximum pattern area including the pattern area, and a pattern data group Individual basic marks included in In the maximum pattern area and Basic mark In the part excluding the pattern area The same as the scribe data A process for forming additional auxiliary patterns, and additional auxiliary patterns were formed. Pattern data group including basic marks Each pattern data group library registration step is registered in the library.
[0017]
As a result, the auxiliary pattern is additionally formed. Individual basic mark By arranging pattern data group including Individual basic mark Can be placed on all photomasks at once, and Individual basic mark Auxiliary pattern added to Because it has If the scribe pattern data is collectively deleted according to the maximum pattern area of the pattern data group, it is arranged with the pattern data in the scribe in each photomask. Individual basic mark Is correctly set, the pattern data placement workload and post-placement verification workload are greatly reduced, and placement errors in placement and verification can be prevented in advance. It can be greatly improved.
[0018]
In addition, when the process technology and manufacturing equipment are determined, additional auxiliary patterns have already been formed in parallel with the semiconductor device design work. Pattern data group including individual basic marks In addition, if the library is registered in advance prior to the design work, the same process technology can be reused. When the design of the semiconductor device progresses and the product processing information is confirmed and the scribe area is determined, the registered auxiliary pattern has been additionally formed. Individual basic mark Only by arranging the pattern data group including Individual basic marks placed on each photomask Therefore, the work of arranging the pattern data in the scribe can be performed efficiently in a short period of time, which greatly contributes to shortening the delivery time of the pattern data creation work in the scribe.
[0019]
Further, the in-scribe pattern data creating apparatus according to claim 2 is the in-scribe pattern data creating apparatus according to claim 1, wherein the exposure operation is performed while moving on the wafer stepwise with the exposure area on the photomask as one pitch. In the pattern data creation device in the scribe of the photomask for manufacturing the semiconductor device by repeating the above, when arranging the registered pattern data group, Basic mark A creation unit that creates shading band pattern data that matches each data area; and a shading zone library registration unit that associates the shading band pattern data with the pattern data group and registers the shading band pattern data group in a library. Features.
[0020]
The in-scribe pattern data creation device according to claim 2, wherein each of the pattern data groups Basic mark Is placed in the scribe, Basic mark Shading band pattern data matching each data area is created, the pattern data and the shading band pattern data are made to correspond, and the shading band pattern data group is registered in the library in association with the pattern data group library.
[0021]
The in-scribe pattern data creating method according to claim 4 is the in-scribe pattern data creating method according to claim 3, wherein the exposure operation is repeated while stepping the wafer with the exposure area on the photomask as one pitch. In the photomask scribe pattern data creation method for manufacturing the semiconductor device according to the above, when the registered pattern data group is arranged in the scribe, Basic mark A shading band in which a shading band pattern data group is registered in the library by associating each pattern data with the shading band pattern data and associating the pattern data group with the creation process for creating the shading band pattern data matching each data area And a library registration step.
[0022]
As a result, on the outermost periphery of the photomask exposure area Basic mark When the shading band pattern data for preventing double exposure is arranged in the outermost peripheral area that is present and opposed, it is arranged on the outermost circumference. Basic mark If the shading band pattern data group associated with the pattern data group including Basic mark Since it is possible to place shading band pattern data for all photomasks at once, Basic mark This greatly reduces the placement workload of the shading band pattern data and the verification workload after placement, and can also prevent placement mistakes in the placement work and verification work, thereby greatly improving the placement quality. it can.
[0023]
In addition, if a shading band pattern data group is registered in advance in the library according to the process technology and manufacturing equipment, the shading band pattern data group is determined after the semiconductor device type processing information is determined and the pattern data group is arranged in the scribe area. Can be performed in a batch, and if the library is registered in advance, it can be reused for the same process technology. Basic mark Can be efficiently performed in a short period of time, which greatly contributes to shortening the delivery time of pattern data creation in the scribe.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings based on FIGS. FIG. 5 is a block diagram showing the in-scribe pattern data creation device in this embodiment. FIG. 6 is a photomask manufacturing flow in this embodiment. FIG.
These are the scribe pattern data creation flow in this embodiment. FIG. 8 is a schematic diagram showing a pattern data group library in the first specific example of the present embodiment. FIG. 9 is a pattern data arrangement diagram in the scribe according to the first specific example of the present embodiment. FIG. 10 is a schematic diagram showing a pattern data group library in the second specific example of the present embodiment. FIG. 11 is a pattern data arrangement diagram in the scribe according to the second specific example of the present embodiment. FIG. 12 is a schematic diagram showing a light shielding band library in the present embodiment. FIG. 13 is a schematic diagram for explaining the effect of the light shielding band.
[0025]
5 includes a central processing unit (hereinafter abbreviated as CPU) 2 through a bus 8 and a memory 3, a magnetic disk device 4, and a display device (hereinafter abbreviated as CRT). 5. A keyboard 6 and an external storage medium driving device 7 are connected to each other, and an external storage medium 9 such as a CDROM or a magnetic medium is detachably installed in the external storage medium driving device 7. is there.
[0026]
The procedure shown in the in-scribe pattern data creation flow shown in FIG. 7, which will be described later, is recorded in the memory 3 and magnetic disk device 4 in the in-scribe pattern data creation device 1, and an external storage medium such as a CDROM or a magnetic medium. 9 is transferred and stored in the memory 3 and the magnetic disk device 4 via the external storage medium driving device 7 or directly transferred to the CPU 2.
[0027]
Also, a library for registering basic marks such as individual alignment marks and inspection marks created according to the mark specifications required for each process technology and manufacturing equipment, the number of photomasks used, names, scribe area width, etc. Process specification registration data for process specifications, as well as basic mark placement standards for registering mark types that match individual process specifications and manufacturing equipment, the number of marks placed, and the placement position relationship between marks as a set Are recorded on the magnetic disk device 4, an external storage medium 9 such as a CDROM, a magnetic medium, etc., and are necessary based on the basic mark arrangement standard according to a command from the CPU 2 in accordance with the in-scribe pattern data creation flow shown in FIG. Accordingly, access to the magnetic disk unit 4 etc., and the basic mark and process specification registration data Extraction of the basic mark group with reference to the data or the like, setting of the maximum area, the formation of the auxiliary patterns, or the process of creating such a light-shielding band pattern data performed. Then, as a processing result, as a pattern data group library shown in FIGS. 8 and 10 and a shading zone library shown in FIG. 12, an external storage medium such as a CDROM or a magnetic medium via the magnetic disk device 4 or the external storage medium driving device 7 is used. 9 to create in-scribe pattern data.
[0028]
Hereinafter, a specific description will be given based on FIGS. 8 to 13 according to the flow shown in FIGS.
[0029]
First, the photomask manufacturing flow shown in FIG. 6 will be described. Here, the same steps as those in the flow shown in the prior art (FIG. 1) are denoted by the same step numbers and description thereof is omitted.
[0030]
In the manufacturing flow, when the process technology to be used is determined (S103), the creation of the in-scribe pattern data library is started in parallel with the logical design (S104), and the basic mark library such as the basic mark shape and the basic mark area is started. Maintenance of basic mark arrangement standards such as the number of arrangement of basic marks suitable for the process of use and manufacturing equipment, and the arrangement position (S1). During this time, the design work of the semiconductor device proceeds from the logical design (S104) to the layout design (S105). The design was made at S1 when the chip size of the semiconductor device was determined upon completion of the layout design (S105). In-scribe pattern data is created based on the basic mark library and the basic mark arrangement standard (S2). Meanwhile, design verification (S106) is performed in the design of the semiconductor device.
[0031]
Therefore, the creation of the in-scribe pattern data library (S1) such as the determination of the basic mark library and the basic mark arrangement reference (S1) and the creation of in-scribe pattern data (S2) for arranging the basic marks in the scribe are performed. Because it can be performed in parallel with the work, the pattern data placement work in the scribe can be efficiently performed in a short time without having to be done independently after the completion of the semiconductor device design work, contributing to shortening the delivery time of the placement work. There is a lot to do.
[0032]
Next, a creation flow (S1) of the in-scribe pattern data library and a creation flow (S2) of the in-scribe pattern data will be described with reference to FIG.
[0033]
Of these, S3 through S6 in FIG. 7 correspond to the creation flow (S1) of the in-scribe pattern data library. When the process technology to be used is determined, the basic marks necessary for manufacturing the semiconductor device are determined. Therefore, a basic mark is created (S3), and the mark shape, mark exclusive area, etc. are determined. Next, the basic mark library registration is performed with the series of created basic marks as one set (S4). Library registration is important in that the basic marks registered when using the same process technology can be reused.
[0034]
Once the process technology is determined, the photomask combination required for manufacturing is determined from the process structure, the name and the number of components of each photomask are determined, and the specifications of the manufacturing equipment and production quality are ensured. From the point of view, negative exposure, positive exposure, alignment accuracy of semiconductor wafer and photomask, scribe area width, etc. are determined at each manufacturing stage, so these data are registered as specific information of the process technology. (S5).
[0035]
Then, based on the registered library (S5) of process technology specific information, the basic marks necessary for manufacturing the semiconductor device are selected from the registered basic mark library (S4) as necessary, and the scribe is stored. Is considered as a basic mark placement reference (S6). As the placement standard, starting with the name of each basic mark, the difference between the basic mark data corresponding to negative and positive exposure, the number of basic marks to secure photomask alignment accuracy and the positional relationship between the placements, Furthermore, information such as basic mark specifications necessary for each manufacturing facility is registered.
[0036]
Next, based on various library registrations prepared by the creation flow (S1) of the pattern data library in scribe (S4, S5, S6), basic marks that have no relative positional relationship with other basic marks Is independent, and when the positional relationship between the basic marks between the basic marks and between the photomasks is a predetermined positional relationship, the basic mark group is extracted as one group (S7). In addition, when extracted as a basic mark group, an area including all mark exclusive areas when set in a predetermined positional relationship is set as the maximum area (S8). In this case, the configuration is such that all mark exclusive areas are included in one maximum area, or a plurality of maximum areas are set with a set of basic mark groups in which the mutually exclusive areas overlap as one unit. It is also possible. In the basic mark placed on the photomask in which the scribe area on the photomask is left with a light shielding film, the basic mark is excluded from the portion included in the maximum area except the exclusive area of the basic mark. An auxiliary pattern identical to the scribe data is formed so as not to generate a gap between the mark and the scribe data (S9).
[0037]
Furthermore, when the basic mark extracted in S7 is arranged on a photomask in which a light-shielding film is not formed in the scribe area on the photomask, the exclusive area of the basic mark is set.
Data is created as shading band pattern data (S10).
[0038]
After these processes are performed on all photomasks (S11) and all basic marks (S12), single basic marks are obtained in units of basic marks, and when extracted as basic mark groups, basic marks. For each basic mark group in a state where the groups are arranged in a predetermined positional relationship, the basic mark to be arranged for each photomask is registered in a library with all photomasks, and the corresponding single basic mark or basic mark group The created shading pattern data is also registered in the library in a lump (S13).
[0039]
Finally, a mark group arrangement reference based on the registered pattern data group library and shading band library is registered (S14). The arrangement reference registered here is different from the basic mark arrangement reference in the creation flow (S1) of the in-scribe pattern data library, and when the arrangement is made in the scribe based on the basic mark arrangement reference or the like, the mutual positional relationship is a predetermined position. This is an arrangement standard when a group of basic marks to be configured as a group pattern data group library, and an arrangement standard of basic marks as an arrangement standard representing the state in which individual basic marks are actually arranged in a scribe. This should be applied in preference to.
[0040]
By the processing of the in-scribe pattern data library creation flow (S1) and the in-scribe pattern data creation flow (S2), the positional relationship between the basic marks does not have to be individually arranged for each photomask. Since the pattern data group library is arranged in which all the basic mark groups are arranged on all photomasks as a unit, the load in the arrangement work of the basic mark groups in the scribe and the verification work after the arrangement is greatly reduced. Since work mistakes and the like in the placement work can be prevented in advance, the placement quality can be greatly improved.
[0041]
In addition, these processes can be performed in parallel with the design work of the semiconductor device, or can be reused when the same process technology is used if performed in advance prior to the design work. The pattern data can be arranged in the scribe after the completion of the design work efficiently with the minimum amount of work required only for batch arrangement of the basic mark group and shading band pattern data on all photomasks. This greatly contributes to shortening the delivery time.
[0042]
Hereinafter, when the layout work is completed in the design work of the semiconductor device and the kind processing information such as the chip size, the number of impositions, and the product name to be inputted is determined, these pieces of information are inputted (S15). After creation (S16), the names and areas of the pattern data group library and shading band library to be arranged are read according to the mark group arrangement reference (S17, S18), and the basic mark group and shading band pattern data are superimposed on the scribe. An arrangement area is created at (S19). Then, the pattern data group library or the shading band library is read in the secured arrangement area (S20), and the basic mark of the pattern data group library or the shading band pattern of the shading band library is arranged in the scribe (S21). After confirming that the positional relationship between the libraries arranged at the time when the arrangement of all the basic marks and shading band pattern data is completed satisfies the mark group arrangement criteria (S22: YES), the basic mark arrangement in the scribe The work is finished. When it is determined that the arrangement standard is not satisfied (S22: NO), the process of S15 to S21 is repeated again after changing the mark group arrangement standard. Here, changing the mark group arrangement reference means, for example, changing the arrangement reference by adjusting the predetermined positional relationship between the basic marks when there is a range of specifications for the predetermined positional relationship between the basic marks. Etc. are considered.
[0043]
Next, the arrangement of the basic marks in the scribe performed according to the flow shown in FIGS. 6 and 7 will be specifically described based on FIGS.
[0044]
The first specific example shown in FIG. 8 and FIG. 9 shows a pattern data group library in the case where the centers of the basic marks arranged on each photomask are the same (FIG. 8), and the arrangement state on the photomask (FIG. 8). 9).
[0045]
In the first specific example, three photomasks 11, 12, and 13 are described as an example. Of the photomasks 11, 12, and 13, the two photomasks 11 and 13 are specifications that leave a light-shielding film on the scribes 14 and 16, and the photomask 12 is shielded from light on the scribe 15. It is a photomask with specifications that do not leave a film. Basic marks 107, 108, and 109 are arranged on the photomasks 11, 12, and 13, respectively, but each has a different size and a different exclusive area, so in order to collectively register and collectively arrange as a pattern data group library. The auxiliary pattern identical to the scribe data needs to be added to the portion outside the exclusive region of the basic mark and belonging to the maximum region of the pattern data group library as necessary. The auxiliary pattern is data necessary to prevent a data gap from being generated between the basic mark and the scribe data when the pattern data group library is arranged.
[0046]
In the first specific example, since the centers of the basic marks 107, 108, 109 are arranged at the same position on the photomasks 11, 12, 13, the basic marks 107, 108, 109 are arranged at predetermined positions. The maximum area including each exclusive area corresponds to the exclusive area of the basic mark 109 having the maximum exclusive area from FIG. Further, since the photomasks 11 and 13 that leave the light-shielding film on the scribe are the basic marks 107 and 109, the marks that need to be added with the auxiliary pattern are the basic marks 107. The supplementary pattern is added to the maximum area 19 corresponding to the exclusive area of the basic mark 109 from the exclusive area of the basic mark 107, and the basic mark 17 with the auxiliary pattern added is created. As for the basic mark 108, the basic mark 18 is created as an area to which an area matching the maximum area is added as an exclusive area when creating the pattern data group library. The centers of these basic marks 17, 18, 19 are aligned and registered as a pattern data group library 20.
[0047]
Since the basic mark group to be arranged in each photomask 11, 12, 13 can be registered as the mark group library 20, one for each photomask 11, 12, 13 for each basic mark 107, 108, 109. They can be arranged in a batch without having to be arranged one by one, and the positional relationship between the basic marks 107, 108, 109 within the photomasks 11, 12, 13 and between the photomasks 11, 12, 13 is accurately maintained. Can be arranged in a state, the arrangement quality can be improved, the load on the arrangement work and the arrangement pattern data verification work after the arrangement can be greatly reduced, and the pattern data arrangement work in the scribe can be efficiently performed in a short time. It can greatly contribute to shortening the delivery time of the placement work.
[0048]
The second specific example shown in FIGS. 10 and 11 includes a pattern data group library 24 in which a plurality of basic marks 107, 108, and 109 arranged at different positions on the photomasks 11, 12, and 13 are grouped. (FIG. 10), the arrangement | positioning condition on the photomasks 11, 12, and 13 is shown (FIG. 11). The pattern data group library is configured in such a manner that three types of basic marks 107, 108, and 109 are respectively arranged in the edges of the scribes in the photomasks 11, 12, and 13 and in the direction perpendicular thereto.
[0049]
The three photomasks 11, 12, and 13 are the same as in the first specific example. For the photomasks 11 and 13, a light-shielding film is left on the scribes 14 and 16, and for the photomask 12 on the scribe 15 It is a specification that does not leave a light-shielding film. In each photomask 11, 12, 13, basic marks 107, 108, 109 are arranged in three directions, that is, the end sides of the scribes 14, 15, 16 and the direction perpendicular thereto, and each basic mark 107, 108, 109 is arranged.
Therefore, three regions having different exclusive regions are formed. In the second specific example, since the center positions of the respective basic marks coincide with each other, it is possible to perform the arrangement work by arranging the pattern data group library 20 shown in the first specific example in three places. Since the positional relationship between the basic marks arranged at the locations is a predetermined relationship, the whole can be collectively registered as one pattern data group library and collectively arranged.
[0050]
It is necessary to form auxiliary patterns as appropriate when performing batch registration. In this case, the dedicated areas when the basic marks 107, 108, and 109 are arranged at predetermined positions are dispersed in three locations. It is appropriate to define the area including all the basic marks 107, 108, 109 as the maximum area in consideration of the arrangement work of the pattern data group library in the scribe. A T-shaped region (the sum of the auxiliary pattern 23 and the basic mark 109) including the basic mark 109 having the largest region among the basic marks 107, 108, and 109 can be defined as the maximum region.
[0051]
Accordingly, for the basic mark 107, the area obtained by removing the basic mark 107 area from the T-shaped area is used as the auxiliary pattern 21, and for the basic mark 109, the area obtained by removing the basic mark 109 area from the T-shaped area is used as the auxiliary pattern 23. And As for the basic mark 108, as in the first specific example, since there is no scribe light shielding film on the photomask, an auxiliary pattern is unnecessary, but the area 22 is secured as an exclusive area of the pattern data group library 24. The auxiliary patterns 21 and 23 or the exclusive area 22 described above are added to the basic marks 107, 109, and 108 and registered as the pattern data group library 24.
[0052]
In the second specific example, the case is shown in which the center positions of the basic marks coincide with each other. However, even if the center positions of the basic marks are different, the basic marks having a predetermined positional relationship with each other are grouped together. As long as the area including all these exclusive areas is set as the maximum area and auxiliary patterns for each basic mark are set, pattern data in which a plurality of basic marks are registered at once for the basic mark groups having different arrangement positions. A group library 24 can be constructed.
[0053]
A plurality of basic mark groups 107, 108, and 109 to be arranged for each photomask 11, 12, and 13 can be registered as a mark group library 24 in a lump, so that each photo for each basic mark 107, 108, and 109 can be registered. The masks 11, 12, and 13 can be arranged at a time without having to be arranged one by one, and the basic marks 107 and 108 in the photomasks 11, 12, and 13 and between the photomasks 11, 12, and 13 can be arranged. , 109 can be arranged with the positional relationship between them accurately maintained, the arrangement quality can be improved, the load on the arrangement work and the arrangement pattern data verification work after the arrangement can be greatly reduced, and Pattern data placement work can be performed efficiently in a short period of time, which greatly contributes to shortening the delivery time of the placement work.
[0054]
FIG. 12 shows shading band libraries 33 and 35 for the pattern data group libraries 20 and 24 shown in the first and second specific examples. The shading band pattern data is exposed at the same position on the opposite side in the exposure step direction to prevent double exposure of the basic mark placed at the end of the exposure area of the photomask during the exposure step movement. It is arranged to prevent. Accordingly, the light shielding band pattern data is created for the basic mark arranged on the photomask having no light shielding film on the scribe.
[0055]
FIG. 12A is for the pattern data group library 20 of the first specific example. The light shielding band pattern data 32 is formed for the basic mark 108 arranged on the photomask 12 having no light shielding film on the scribe, and the other basic marks 107 and 109 are arranged on the photomasks 11 and 13 having the light shielding film on the scribe. Therefore, the shading band pattern data is not created. Therefore, the shading zone library 33 having the shading zone pattern data 32 that shields the basic mark 108 is registered.
[0056]
FIG. 12B is for the pattern data group library 24 of the second specific example. As in FIG. 12A, the light shielding band pattern data 32 is formed on each of the basic marks 108 arranged at a plurality of positions of the photomask 12 having no light shielding film on the scribe, and the other basic marks 107 and 109 are shielded from light. Since the band pattern data is not created, the shading band library 35 having the shading band pattern data 32 that shields the basic mark 108 is registered.
[0057]
FIG. 13 shows the effect of the light shielding band. In the drawing, the exposure position on the semiconductor wafer is sequentially shifted in steps by disposing the light-shielding band library 37 at a position opposite to the upper side with respect to the pattern data group library 36 on the lower side of the photomask 12. Even when the lower side and the upper side of the photomask 12 overlap each other as the boundary region and are exposed twice, since the shading band pattern data 37 is arranged, double exposure to the basic mark 36 is prevented and the basic mark is surely obtained. 36 can be formed.
[0058]
When the basic mark group to be placed on each photomask is placed at the end of the photomask, shading zone pattern data for preventing double exposure can be registered as a shading zone library in a lump. It is not necessary to arrange one shading band pattern data for each photomask for each basic mark arranged at the end, and can be arranged in a lump, and further, the shading band within the photomask and between the photomasks. Arrangement can be performed with the positional relationship between pattern data accurately maintained, the arrangement quality can be improved, and the load on the arrangement work and the arrangement pattern data verification work after the arrangement can be greatly reduced. Pattern data placement work can be performed efficiently in a short period of time, which greatly contributes to shortening the delivery time of the placement work.
[0059]
As described above in detail, in the in-scribe pattern data creation device and the in-scribe pattern data creation method according to the present embodiment, the in-scribe pattern data creation device 1 has a memory 3, a magnetic disk device 4, The external storage medium driving device 7 and the like are connected to each other, and the external storage medium driving device 7 is provided with an external storage medium 9 such as a CDROM or a magnetic medium. The procedure shown is recorded in the memory 3 or the magnetic disk device 4 or recorded in the external storage medium 9 and transferred to the memory 3 or the magnetic disk device 4 via the external storage medium driving device 7 or directly transferred to the CPU 2. To do.
[0060]
In addition, a basic mark library such as alignment marks and inspection marks according to the mark specifications required for process technology and manufacturing equipment, etc., process specification registration data such as the number of photomasks used, name, scribe area width, process specifications and manufacturing equipment Basic mark arrangement criteria such as the applicable mark type, number of arrangements, mutual arrangement position relationship, etc. are recorded in the magnetic disk device 4 or the external storage medium 9, and a command from the CPU 2 in accordance with the in-scribe pattern data creation flow (FIG. 7). To perform processing such as extraction of a basic mark group, setting of a maximum area, formation of an auxiliary pattern, creation of shading band pattern data, and the like. The pattern data group library (FIGS. 8 and 10) and the light-shielding band library (FIG. 12) obtained as processing results are registered in the magnetic disk device 4 and the like, and in-scribe pattern data is created.
[0061]
In the photomask manufacturing flow (FIG. 6), when the process technology to be used is determined (S103), in parallel with the logical design (S104), the basic mark library such as the shape and area of the basic mark, the process of use, Preparation of basic mark arrangement criteria such as the number of arrangement of basic marks suitable for the manufacturing equipment and the arrangement position is performed (S1). During this time, the semiconductor device design work proceeds from logic design (S104) to layout design (S105), and the chip size is determined.
At this point, the in-scribe pattern data is created (S2).
[0062]
Accordingly, the creation of the in-scribe pattern data library (S1) for determining the basic mark library and the arrangement reference (S1) and the creation of the in-scribe pattern data for arranging the basic marks (S2) are performed in parallel with the design work of the semiconductor device. Therefore, the pattern data placement work in the scribe can be efficiently performed in a short period of time, which greatly contributes to shortening the delivery time of the placement work.
[0063]
In the creation flow (S1) (S3 to S6 in FIG. 7) of the in-scribe pattern data library, basic marks necessary for determining the process technology are determined, so that basic marks are created (S3) mark shape and exclusive area Etc. and the basic mark library registration is performed (S4), and can be reused when the same process technology is used. Further, since the combination of photomasks is determined and the negative / positive exposure, alignment accuracy, scribe area width, and the like are determined, they are registered as process technology specific information (S5).
[0064]
Based on the unique information library (S5), select the basic marks necessary for manufacturing from the basic mark library (S4) registered as necessary, consider the placement standard in the scribe, and register it as the basic mark placement standard In step S6, information such as the name of the basic mark, whether the pattern data is correct, the number of arrangements, the mutual positional relationship, and the basic mark specifications for each manufacturing facility are registered.
[0065]
In the subsequent scribe pattern data creation flow (S2) (S7 to S14 in FIG. 7), based on various prepared library registrations (S4, S5, S6), the basic marks alone or between the basic marks and the photomask If the basic marks are in a predetermined positional relationship with each other, they are extracted as one unit (S7), and the exclusive region of the basic marks is set as the maximum region, and the region including all the exclusive mark regions in the predetermined positional relationship is set ( S8). The maximum area in this case may be configured to include all the mark exclusive areas, or may be configured to set a plurality of overlapping basic mark groups as one unit. When the mask is arranged on a photomask that leaves a light-shielding film on the scribe, an auxiliary pattern is formed so that no gap is generated between the scribe data in the portion other than the basic mark exclusive region in the maximum region (S9). For a photomask that does not have light-shielding data in the scribe, light-shielding band pattern data is created for a region that matches the basic mark exclusive region (S10).
[0066]
After performing these processes on all photomasks (S11) and all basic marks (S12), the library is registered in batches in units of basic marks or in a state where basic mark groups are arranged in a predetermined positional relationship. Corresponding shading band pattern data is also registered in the library in a lump (S13).
[0067]
Then, a mark group arrangement reference based on the pattern data group library and the shading band library is registered (S14). The arrangement standard here is different from the basic mark arrangement standard, and is a standard in which one group of basic mark groups arranged based on the basic mark arrangement standard or the like is configured as a single pattern data group library, and represents an actual arrangement state. This is a standard that should be applied in preference to the standard mark layout standard.
[0068]
Through the above-described processing for creating the in-scribe pattern data library (S1) and the in-scribe pattern data creating flow (S2), the basic marks are in a predetermined positional relationship with each other without being individually arranged for each photomask. Since the pattern data group library is configured to arrange the basic mark group as a unit on all the photomasks, the load of the basic mark group in the scribe and the verification work after the arrangement is greatly reduced, and the arrangement work Since work mistakes can be prevented in advance, the arrangement quality can be greatly improved.
[0069]
In addition, the work can be performed in parallel with the design work of the semiconductor device, or can be reused for the same process if performed in advance prior to the design work. The internal pattern data placement work can be efficiently performed with the minimum amount of work required only by batch placement of the basic mark group and shading band pattern data on all photomasks, which contributes to shortening the work delivery time. It is.
[0070]
In the first specific example (FIGS. 8 and 9), among the three photomasks 11, 12, and 13, the photomasks 11 and 13 leave the light shielding film on the scribes 14 and 16, and do not leave the photomask 12. Is the case. The basic marks 107, 108, and 109 arranged on the photomasks 11, 12, and 13 are arranged at the same position, but have different exclusive areas. Therefore, when the pattern data group library is used, an auxiliary pattern is added. There is a need. This is because no data gap is generated between the basic mark and the scribe data when the pattern data group library is arranged. Since the maximum area matches the exclusive area of the basic mark 109, the mark that needs to be supplemented with the auxiliary pattern is the basic mark 107. A portion excluding the exclusive region of the basic mark 107 from the maximum region 19 is added as an auxiliary pattern to create the basic mark 17. A basic mark 18 in which an area matching the maximum area is added as an exclusive area is added to the pattern data group library 20.
[0071]
As described above, since the basic mark group to be arranged on each photomask 11, 12, 13 can be registered as the pattern data group library 20, it can be arranged on all the photomasks 11, 12, 13 at once, It is possible to arrange with mutual positional relationship accurately maintained, improve the placement quality, greatly reduce the load of placement work and placement pattern data verification work, and make the placement work efficient in a short time It can be performed well and contributes to shortening the delivery time.
[0072]
In the second specific example (FIGS. 10 and 11), the basic marks 107, 108, and 109 are formed in three regions having different exclusive regions in three directions, that is, the end sides of the scribes 14, 15, and 16 and the perpendicular direction. Is done. Since the basic mark center positions coincide with each other, it is possible to arrange the pattern data group library 20 of the first specific example in three places. However, the basic marks arranged in the three places have a predetermined positional relationship with each other. Therefore, the whole can be collectively registered as one pattern data group library.
[0073]
It is appropriate to define the area including all the basic marks 107, 108, and 109 as the maximum area in consideration of the arrangement work of the pattern data group library in the scribe. A T-shaped region (the sum of the auxiliary pattern 23 and the basic mark 109) including the basic mark 109 having the largest region is defined as the maximum region. The auxiliary pattern is an area obtained by removing the basic mark 107 area from the T-shaped area for the basic mark 107, and the basic mark 109 is an area obtained by removing the basic mark 109 area from the T-shaped area. For the basic mark 108, the area 22 is secured as an exclusive area. The auxiliary patterns 21 and 23 or the exclusive area 22 are added to the basic marks 107, 109 or 108 and registered as the pattern data group library 24.
[0074]
In the second specific example, a case is shown in which the center positions of the basic marks coincide with each other. However, even if the center positions are different, the pattern data group library 24 collectively registered as a unit if they have a predetermined positional relationship with each other. Can be configured.
[0075]
As described above, a plurality of basic mark groups 107, 108, and 109 to be arranged for each photomask 11, 12, and 13 can be collectively made into the pattern data group library 24. It can be arranged with the mutual positional relationship kept accurate.
The layout quality can be improved, the load on the placement work and the placement pattern data verification work can be greatly reduced, and the placement work can be performed efficiently in a short period of time, which contributes to shortening the delivery time of the work. It is.
[0076]
Regarding the light shielding band libraries 33 and 35 (FIG. 12), the basic mark placed on the photomask having no light shielding film on the scribe is shielded with respect to the basic mark 108 with respect to the pattern data group library 20 of the first specific example. Since the band pattern data 32 is formed and is not created for the photomasks 11 and 13 having the light-shielding film on the scribe, the light-shielding band library 33 having the light-shielding band pattern data 32 is registered (FIG. 12A). . Also for the pattern data group library 24 of the second specific example, since the light shielding band pattern data 32 is formed only on the mark 108, the light shielding band library 35 having the light shielding band pattern data 32 is registered (FIG. 12B). )).
[0077]
When the basic mark group is arranged at the edge of the photomask, the shading band pattern data for preventing double exposure can be registered collectively as a shading band library. It can be arranged with the mutual positional relationship maintained accurately, the arrangement quality can be improved, the load on the arrangement work and the arrangement pattern data verification work after the arrangement can be greatly reduced, and in the scribe. Pattern data placement work can be performed efficiently in a short period of time, which greatly contributes to shortening the delivery time of the placement work.
[0078]
In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that various improvement and deformation | transformation are possible within the range which does not deviate from the meaning of this invention.
For example, in the present embodiment, the pattern data group library for the basic marks arranged at the same position in the first specific example, and the basic mark groups arranged in the scribe end portion and the direction perpendicular thereto in the second specific example. However, the part that can be registered as a library is not limited to this, and the scribe corner part or the scribe part may be a cross part, etc. A pattern data group library can be arbitrarily selected if the positional relationship between the basic mark groups is a predetermined positional relationship.
[0079]
Also, the shading band library can be applied to a combination having a predetermined positional relationship with each other like the pattern data group library.
[0080]
Furthermore, in the present embodiment, the case where the basic mark group and the shading band pattern data are separately registered as a library has been described. However, the pattern data group library can be placed at the end of the scribe by associating both of them together into a library. It is also possible to configure a library having a combination of a mark group and a shading band pattern data having a positional relationship such that the shading band pattern data is arranged at opposite ends when arranged.
[0081]
【The invention's effect】
According to the present invention, when the process technology and the manufacturing equipment to be used are determined, the basic mark group is arranged in a library by collecting the arrangement pattern data of the basic mark group in the scribe for all photomasks. Auxiliary patterns that can be placed together and added to each basic mark Because it has The scribe data can be deleted at once according to the maximum area of the pattern data group. Basic mark To provide an in-scribe pattern data creation apparatus and an in-scribe pattern data creation method capable of reducing the load in the placement work and completing the placement work in a short period of time and greatly improving the placement quality. It becomes possible.
[Brief description of the drawings]
FIG. 1 is a photomask manufacturing flow in the prior art.
FIG. 2 is a flow of creating scribe pattern data in the prior art.
FIG. 3 is a pattern data diagram in the prior art.
FIG. 4 is a pattern data arrangement diagram in a scribe according to the prior art.
FIG. 5 is a block diagram showing an in-scribe pattern data creation device in the present embodiment.
FIG. 6 is a photomask manufacturing flow in the present embodiment.
FIG. 7 is a scribe pattern data creation flow in the present embodiment.
FIG. 8 is a schematic diagram showing a pattern data group library in a first specific example of the embodiment.
FIG. 9 is a pattern data layout diagram in a scribe according to the first specific example of the present embodiment.
FIG. 10 is a schematic diagram showing a pattern data group library in a second specific example of the embodiment.
FIG. 11 is a pattern data arrangement diagram in a scribe according to the second specific example of the present embodiment.
FIG. 12 is a schematic diagram showing a shading zone library in the present embodiment.
FIG. 13 is a schematic diagram for explaining an effect of a light shielding band.
[Explanation of symbols]
1 In-scribe pattern data creation device
2 Central processing unit (CPU)
3 memory
4 Magnetic disk unit
7 External storage medium drive
9 External storage media
17, 18, 19, 21, 22, 23
Basic marks that make up the pattern data group library
20, 24 Pattern data group library
107, 108, 109 Basic mark
32 Shading zone pattern data
33, 35 Shading zone library

Claims (4)

In a scribe pattern data creation device for creating pattern data to be arranged in a scribe of a photomask for manufacturing a semiconductor device,
Extracting means for extracting a pattern data group from the library by a combination having a predetermined arrangement positional relationship among the basic marks arranged for each photomask ;
When each of the basic marks included in the pattern data group is arranged on each of the photomasks and the photomasks are overlaid, a maximum pattern area including the pattern area of the arranged basic marks is set. Setting means;
Formation for each of the basic marks included in the pattern data group, at the maximum pattern area, and the portion excluding the pattern area of the base mark, to add form the same auxiliary pattern and the scribing data Means,
An in-scribe pattern data creation device comprising pattern data group library registration means for registering the pattern data group including the basic mark additionally formed with the auxiliary pattern in a library. In a photomask in-scribe pattern data creation device for manufacturing a semiconductor device by repeating an exposure operation while moving in steps on a wafer with an exposure area on a photomask as one pitch,
When the registered pattern data group is arranged in a scribe, a creation unit that creates shading band pattern data that matches the data area of each of the basic marks ;
The in-scribe pattern data creation device according to claim 1, further comprising: a light shielding band library registration unit that registers the light shielding band pattern data group in association with the pattern data group. In a scribe pattern data creation method for creating pattern data to be arranged in a scribe of a photomask for manufacturing a semiconductor device,
An extraction step of extracting a pattern data group from the library in combination with a predetermined arrangement positional relationship among the basic marks arranged for each photomask ;
When each of the basic marks included in the pattern data group is arranged on each of the photomasks and the photomasks are overlaid, a maximum pattern area including the pattern area of the arranged basic marks is set. A setting process;
Formation for each of the basic marks included in the pattern data group, at the maximum pattern area, and the portion excluding the pattern area of the base mark, to add form the same auxiliary pattern and the scribing data Process,
And a pattern data group library registration step of registering the pattern data group including the basic mark additionally formed with the auxiliary pattern in a library. In a photomask in-scribe pattern data creation method for manufacturing a semiconductor device by repeating an exposure operation while moving in steps on a wafer with an exposure area on a photomask as one pitch,
When arranging the registered pattern data group in a scribe, a creation step of creating shading band pattern data that matches the data area of each of the basic marks ;
4. The in-scribe pattern data creation method according to claim 3, further comprising a shading band library registration step of registering the shading band pattern data group in the library in association with the shading band pattern data.

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