JP3757266B2 - Method and apparatus for detecting near-field light with a superconducting detector - Google Patents
Method and apparatus for detecting near-field light with a superconducting detector Download PDFInfo
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- JP3757266B2 JP3757266B2 JP2001219012A JP2001219012A JP3757266B2 JP 3757266 B2 JP3757266 B2 JP 3757266B2 JP 2001219012 A JP2001219012 A JP 2001219012A JP 2001219012 A JP2001219012 A JP 2001219012A JP 3757266 B2 JP3757266 B2 JP 3757266B2
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Description
【0001】
【発明の属する技術分野】
本発明は、近接場顕微鏡及び走査プローブ顕微鏡に関するものである。
【0002】
【従来の技術】
近接場顕微鏡において、レーザー光等の励起光の照射により、試料表面のような異なる媒体の境界面近傍に局在する赤外線から紫外線の光子エネルギー領域(波長領域)の近接場光を検出する手段は、先端のするどい探針すなわち散乱プローブを近接場内に挿入して、散乱光の一部を光学系で集光して検出する方法、あるいは、微小開口を有する光ファイバープローブのような開口プローブにより、開口部から近接場の一部を外部に取り出して検出する方法が採られている。散乱光を分光する必要がある場合には、集光系あるいはファイバーの後に分光器を設置して分光スペクトルが測定されている。
【0003】
【発明が解決しようとする課題】
従来の散乱プローブを用いる方法では、近接場光の検出効率を上げるには散乱光をできるだけ効率よく集光する必要があるが、プローブと集光系の幾何学的配置に起因して集光効率を上げるのが困難である。すなわち、散乱プローブの先端にあり、近接場を伝搬場に変えるための散乱チップ、あるいはプローブ自体が大きな立体角で散乱中心を覆っているので、集光用の光学レンズに入る散乱光は発生した散乱光の一部となり、集光量がきわめて不十分であるという欠点がある。また、開口プローブを用いる方法においては、近接場光の極一部しかファイバー内を伝搬せず、近接場の検出効率を上げることが困難である。また、分光する場合には光ファイバー自身の発光がノイズとなるという問題がある。
【0004】
【課題を解決するための手段】
本発明は、可視あるいは赤外域まで単一光子の分光能力を有する超伝導光検出器を用いた近接場超伝導集積化プローブにより、これらの問題を解決するものである。
近接場カンチレバーと超伝導光検出器を集積化することにより、近接場内に直接検出器を挿入する、あるいは、散乱プローブに近接した位置に超伝導光検出器を配置することにより、高い近接場検出効率と近接場の光子単位の分光を実現する。また、原子間力、トンネル電流を使った表面観察を行うことにより、表面形態、電気的特性と近接場による光学的特性を同時に取得することができる。
【0005】
【実施例1】
図1は、カンチレバーの端部に先端が鋭利な支持体を設け、該支持体上に超伝導体1、絶縁体、超伝導体2からなる超伝導トンネル接合構造を有する光検出器を形成し、該光検出器を近接場内に挿入することにより、高い効率で近接場光を検出し、光子のエネルギー測定も行うことのできる近接場光検出プローブの断面図である。
カンチレバーとしては、マイクロマシニング技術等で作製される原子間力顕微鏡やトンネル顕微鏡で用いられているカンチレバーや、従来の近接場顕微鏡で用いられているカンチレバーを使うことができる。
円錐状あるいは多面体からなる先端が鋭利な支持体上に超伝導トンネル接合を作製するには、該支持体を回転させながら、スパッタリング法により側面からNb等の超伝導薄膜を堆積させる。この後、Al薄膜を同じ方法にて堆積させ、その表面を酸化することにより、絶縁層を形成する。その上にAl薄膜、Nb薄膜を堆積させる。超伝導トンネル接合の作製方法は、スパッタリング法以外の薄膜堆積法以外でも可能である。また、超伝導トンネル接合の積層構造は上記の例以外のものも可能である。
【0006】
【実施例2】
図2は、カンチレバーの端部に先端が鋭利な支持体を設け、該支持体上に超伝導体から成るカロリメーター光検出器を形成し、該光検出器を近接場内に挿入することにより、高い効率で近接場光を検出し、光子のエネルギー測定も行うことのできる近接場光検出プローブの断面図である。
カンチレバーとしては、マイクロマシニング技術等で作製される原子間力顕微鏡で用いられているカンチレバーや、従来の近接場顕微鏡で用いられているものを使うことができる。
円錐状あるいは多面体からなる先端が鋭利な散乱チップ上にカロリメーター光検出器を作製するには、例えば、散乱チップを回転させながら、スパッタリング法により側面からW薄膜を堆積させることにより形成する。
カロリメーター検出器の作製方法は、スパッタリング法以外の薄膜堆積法以外でも可能である。また、カロリメーター光検出器の構造は単一の超伝導体、異なる種類の超伝導薄膜からなる多層膜、あるいは超伝導薄膜と常伝導金属薄膜からなる多層膜でも可能である。
【0007】
【実施例3】
図3は、近接場カンチレバーの表面に超伝導体1、絶縁体、超伝導体2からなる超伝導トンネル接合構造を設け、該構造上に近接場光を伝搬光に変換するための散乱チップを載置し、該散乱チップ先端と超伝導トンネル接合光検出器を近接させることにより、高効率で近接場光を検出及び該光の光子エネルギー測定を行う近接場光検出プローブの断面図である。
プローブの作製方法の例としては、超伝導トンネル接合光検出器を、例えば窒化シリコンで覆われたシリコン基板上に、薄膜作製とフォトリソグラフィーによる従来のトンネル接合作製方法にて検出器を作製後、従来のマイクロマシニング技術を用いてカンチレバーに加工する。光検出器の上に散乱チップを載せるには、マイクロマシニング技術で作製した散乱チップを接着する方法やプラスチックの微小球を載せる方法などが可能である。検出器は、一つだけでなく複数配置することによりさらに検出効率を上げることができる。
【0008】
【実施例4】
図4は、近接場カンチレバーの表面に超伝導体から成るカロリメーター光検出器を設け、該検出器上に近接場光を伝搬光に変換するための散乱チップを載せて、散乱チップ先端と超伝導カロリメーター光検出器を近接させることにより、高効率で近接場光を検出及び該光の光子エネルギー測定を行う近接場光検出プローブの断面図である。
プローブの作製方法の例としては、カロリメーター光検出器を、例えば窒化シリコンで覆われたシリコン基板上に、薄膜作製とフォトリソグラフィーによる従来の方法にて検出器を作製後、従来のマイクロマシニング技術を用いてカンチレバーに加工する。
光検出器の上に散乱チップを載置するには、マイクロマシニング技術で作製した散乱チップを接着する方法やプラスチックの微小球を載せる方法などが可能である。検出器は、一つだけでなく複数配置することによりさらに検出効率を上げることができる。
【0009】
【実施例5】
図5は、近接場カンチレバーの散乱チップの上あるいは近傍に超伝導体1、絶縁体、超伝導体2からなる超伝導トンネル接合構造の光検出器を配置することにより、高効率で近接場光を検出及び該光の光子エネルギー測定を行う近接場光検出プローブの断面図である。
カンチレバーの上に検出器がある場合には、カンチレバーを透過する波長範囲の光のみ検出可能である。検出器は、一つだけでなく複数配置することによりさらに検出効率を上げることができる。
【0010】
【実施例6】
図6は、近接場カンチレバーの散乱チップの近傍に超伝導体からなるカロリメーター光検出器を配置することにより、高効率で近接場光を検出、あるいは該光の光子エネルギー測定を行う近接場光検出プローブの断面図である。
カンチレバーの上に検出器がある場合には、カンチレバーを透過する波長範囲の光のみ検出可能である。検出器は、一つだけでなく複数配置することによりさらに検出効率を上げることができる。
【0011】
【発明の効果】
本願発明は、超伝導トンネル接合光検出器あるいは超伝導カロリメーター光検出器とカンチレバープローブを集積化することにより、高い効率で近接場光を検出でき、また近接場光を光子単位で光子のエネルギー測定(分光)を行うことができる。また、このプローブにより試料上を走査することにより、表面形状、電気的特性、光学的特性の二次元情報を個別にあるいは同時に得ることができる。
【図面の簡単な説明】
【図1】 本願発明に係る超伝導トンネル接合構造を有する光検出器を備えた近接場光検出プローブの断面図
【図2】 本願発明に係る超伝導体から成るカロリメーター光検出器を備えた近接場光検出プローブの断面図
【図3】 本願発明に係る超伝導トンネル接合構造を有する光検出器の上に散乱チップを積載した近接場光検出プローブの断面図
【図4】 本願発明に係る超伝導体から成る光検出器の上に散乱チップを積載した近接場光検出プローブの断面図
【図5】 本願発明に係る散乱チップの近傍に超伝導トンネル接合構造を有する光検出器を配置した近接場光検出プローブの断面図
【図6】 本願発明に係る散乱チップの近傍に超伝導体から成るカロリメーター光検出器を配置した近接場光検出プローブの断面図[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a near-field microscope and a scanning probe microscope.
[0002]
[Prior art]
In a near-field microscope, means for detecting near-field light in the photon energy region (wavelength region) of ultraviolet light from infrared light localized near the boundary surface of a different medium such as a sample surface by irradiation of excitation light such as laser light. , By opening a probe with a tip or scattering probe into the near field and collecting and detecting a part of the scattered light with an optical system, or using an aperture probe such as an optical fiber probe having a minute aperture A method is adopted in which a part of the near field is taken out from the part and detected. When it is necessary to split the scattered light, the spectroscopic spectrum is measured by installing a spectroscope after the condensing system or fiber.
[0003]
[Problems to be solved by the invention]
In the conventional method using a scattering probe, it is necessary to collect scattered light as efficiently as possible in order to increase the detection efficiency of near-field light. Is difficult to raise. That is, at the tip of the scattering probe, since the scattering tip for changing the near field into a propagation field, or the probe itself covers the scattering center with a large solid angle, scattered light entering the converging optical lens was generated. There is a disadvantage that it becomes part of the scattered light and the amount of collected light is extremely insufficient. In the method using the aperture probe, only a part of the near-field light propagates through the fiber, and it is difficult to increase the near-field detection efficiency. In addition, there is a problem that light emission from the optical fiber itself becomes noise in the case of spectroscopy.
[0004]
[Means for Solving the Problems]
The present invention solves these problems by a near-field superconducting integrated probe using a superconducting photodetector having a single-photon spectroscopic ability up to the visible or infrared region.
High near-field detection by integrating a near-field cantilever and a superconducting photodetector to insert a detector directly in the near-field, or by placing a superconducting photodetector near the scattering probe Realize efficiency and near-field photon unit spectroscopy. In addition, by performing surface observation using atomic force and tunnel current, surface morphology, electrical characteristics, and optical characteristics due to the near field can be acquired simultaneously.
[0005]
[Example 1]
In FIG. 1, a support having a sharp tip is provided at the end of a cantilever, and a photodetector having a superconducting tunnel junction structure composed of a superconductor 1, an insulator, and a superconductor 2 is formed on the support. FIG. 3 is a cross-sectional view of a near-field light detection probe that can detect near-field light with high efficiency and also measure photon energy by inserting the photodetector into the near-field.
As the cantilever, a cantilever used in an atomic force microscope or a tunnel microscope manufactured by a micromachining technique or the like, or a cantilever used in a conventional near-field microscope can be used.
In order to produce a superconducting tunnel junction on a conical or polyhedral support with a sharp tip, a superconducting thin film such as Nb is deposited from the side by sputtering while rotating the support. Thereafter, an Al thin film is deposited by the same method, and the surface is oxidized to form an insulating layer. An Al thin film and an Nb thin film are deposited thereon. The superconducting tunnel junction can be produced by a method other than the thin film deposition method other than the sputtering method. Further, the superconducting tunnel junction laminated structure may be other than the above example.
[0006]
[Example 2]
FIG. 2 shows a case where a support body having a sharp tip is provided at the end of the cantilever, a calorimeter photodetector made of superconductor is formed on the support body, and the photodetector is inserted into the near field, It is sectional drawing of the near-field light detection probe which can detect near-field light with high efficiency and can also measure the energy of a photon.
As the cantilever, a cantilever used in an atomic force microscope manufactured by a micromachining technique or the like, or a cantilever used in a conventional near-field microscope can be used.
In order to manufacture a calorimeter photodetector on a conical or polyhedral scattering tip with a sharp tip, for example, a thin W film is deposited from the side surface by sputtering while rotating the scattering tip.
The calorimeter detector can be produced by a method other than the thin film deposition method other than the sputtering method. Further, the calorimeter photodetector may be a single superconductor, a multilayer film composed of different types of superconducting thin films, or a multilayer film composed of a superconducting thin film and a normal metal thin film.
[0007]
[Example 3]
FIG. 3 shows a superconducting tunnel junction structure comprising a superconductor 1, an insulator, and a superconductor 2 on the surface of a near-field cantilever, and a scattering chip for converting near-field light into propagating light on the structure. FIG. 4 is a cross-sectional view of a near-field light detection probe that detects the near-field light and measures the photon energy of the light with high efficiency by placing it and bringing the tip of the scattering chip close to the superconducting tunnel junction photodetector.
As an example of a probe fabrication method, a superconducting tunnel junction photodetector is fabricated on a silicon substrate covered with, for example, silicon nitride, after fabricating the detector by a conventional tunnel junction fabrication method using thin film fabrication and photolithography, Processed into cantilevers using conventional micromachining technology. In order to mount the scattering chip on the photodetector, a method of adhering the scattering chip manufactured by the micromachining technique or a method of mounting a plastic microsphere can be used. The detection efficiency can be further increased by arranging a plurality of detectors instead of only one.
[0008]
[Example 4]
FIG. 4 shows that a calorimeter photodetector made of a superconductor is provided on the surface of a near-field cantilever, and a scattering chip for converting near-field light into propagating light is placed on the detector. It is sectional drawing of the near-field light detection probe which detects a near-field light and measures the photon energy of this light by making a conduction | electrical_connection calorimeter photodetector close.
As an example of a probe fabrication method, a calorimeter photodetector is fabricated on a silicon substrate covered with silicon nitride, for example, by fabricating a detector by a conventional method using thin film fabrication and photolithography, and then a conventional micromachining technology. To make a cantilever.
In order to place the scattering chip on the photodetector, a method of adhering the scattering chip produced by the micromachining technique or a method of placing a plastic microsphere can be used. The detection efficiency can be further increased by arranging a plurality of detectors instead of only one.
[0009]
[Example 5]
FIG. 5 shows a high-efficiency near-field light by arranging a superconducting tunnel junction structure photodetector composed of a superconductor 1, an insulator, and a superconductor 2 on or near a scattering chip of a near-field cantilever. 2 is a cross-sectional view of a near-field light detection probe that detects light and measures the photon energy of the light.
When the detector is above the cantilever, only light in the wavelength range that passes through the cantilever can be detected. The detection efficiency can be further increased by arranging a plurality of detectors instead of only one.
[0010]
[Example 6]
FIG. 6 shows a near-field light that detects a near-field light or measures a photon energy of the light by arranging a calorimeter photodetector made of a superconductor in the vicinity of a scattering tip of a near-field cantilever. It is sectional drawing of a detection probe.
When the detector is above the cantilever, only light in the wavelength range that passes through the cantilever can be detected. The detection efficiency can be further increased by arranging a plurality of detectors instead of only one.
[0011]
【The invention's effect】
The present invention can detect near-field light with high efficiency by integrating a superconducting tunnel junction photodetector or superconducting calorimeter photodetector and a cantilever probe, and can detect the near-field light in photon units. Measurement (spectroscopy) can be performed. Also, by scanning the sample with this probe, two-dimensional information on the surface shape, electrical characteristics, and optical characteristics can be obtained individually or simultaneously.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a near-field light detection probe including a photodetector having a superconducting tunnel junction structure according to the present invention. FIG. 2 includes a calorimeter photodetector made of a superconductor according to the present invention. FIG. 3 is a cross-sectional view of a near-field light detection probe. FIG. 4 is a cross-sectional view of a near-field light detection probe in which a scattering chip is mounted on a light detector having a superconducting tunnel junction structure according to the present invention. FIG. 5 is a cross-sectional view of a near-field light detection probe in which a scattering chip is mounted on a photodetector made of a superconductor. FIG. 5 shows a photodetector having a superconducting tunnel junction structure in the vicinity of the scattering chip according to the present invention. FIG. 6 is a cross-sectional view of a near-field light detection probe in which a calorimeter light detector made of a superconductor is disposed in the vicinity of a scattering chip according to the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001219012A JP3757266B2 (en) | 2001-07-19 | 2001-07-19 | Method and apparatus for detecting near-field light with a superconducting detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001219012A JP3757266B2 (en) | 2001-07-19 | 2001-07-19 | Method and apparatus for detecting near-field light with a superconducting detector |
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| JP2003035649A JP2003035649A (en) | 2003-02-07 |
| JP3757266B2 true JP3757266B2 (en) | 2006-03-22 |
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| JP5017190B2 (en) * | 2008-06-13 | 2012-09-05 | 日本電信電話株式会社 | Fabrication method of near-field optical probe |
| CN111610345B (en) * | 2020-06-04 | 2022-04-19 | 中国科学技术大学 | Far infrared detector and near-field microscope |
| CN115754961B (en) * | 2022-11-16 | 2025-12-30 | 上海无线电设备研究所 | An echo generation method based on a near-field correction model of attribute scattering center |
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