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JP3764599B2 - Manufacturing method of optical semiconductor element storage package - Google Patents
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JP3764599B2 - Manufacturing method of optical semiconductor element storage package - Google Patents

Manufacturing method of optical semiconductor element storage package Download PDF

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Publication number
JP3764599B2
JP3764599B2 JP08052399A JP8052399A JP3764599B2 JP 3764599 B2 JP3764599 B2 JP 3764599B2 JP 08052399 A JP08052399 A JP 08052399A JP 8052399 A JP8052399 A JP 8052399A JP 3764599 B2 JP3764599 B2 JP 3764599B2
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Prior art keywords
semiconductor element
fixing member
optical semiconductor
metal
base
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JP08052399A
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JP2000277758A (en
Inventor
隆 澤井
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Kyocera Corp
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Kyocera Corp
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Priority to JP08052399A priority Critical patent/JP3764599B2/en
Priority to US09/535,288 priority patent/US6420205B1/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4251Sealed packages

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は光半導体素子を収容するための光半導体素子収納用パッケージに関するものである。
【0002】
【従来の技術】
従来、光半導体素子を収容するための光半導体素子収納用パッケージは、一般に酸化アルミニウム質焼結体等のセラミックス材から成り、上面に光半導体素子を収容するための凹部を有する基体と、該基体の側部に形成された貫通孔と、前記基体の貫通孔周辺の外表面にロウ付け取着され、内部に光信号が伝達される空間を有する鉄ーニッケル合金(鉄:50重量%、ニッケル:50重量%)等の金属材料から成る筒状の固定部材と、前記筒状固定部材の内部にガラスを介して取着された筒状固定部材の内部を塞ぐ透光性部材と、前記基体の凹部内側から外表面にかけて被着導出されているタングステンやモリブデン、マンガン等から成り、光半導体素子の電極がボンディングワイヤ等の電気的接続手段を介して接続される複数個の配線導体層と、前記基体の上面に取着され、前記凹部を塞ぐ蓋体とから構成されており、前記基体の凹部内に光半導体素子をガラス、樹脂、ロウ材等の接着剤を介して接着固定するとともに該光半導体素子の各電極をボンディングワイヤ等の電気的接続手段を介して配線導体層に電気的に接続し、しかる後、前記基体の上面に蓋体をガラス、樹脂、ロウ材等から成る封止材を介して接合させ、基体と蓋体とから成る容器内部に光半導体素子を気密に収容するとともに筒状固定部材に光ファイバー部材をYAG等のレーザー光線を使用して溶接接続させることによって製品としての光半導体装置となる。
【0003】
かかる光半導体装置は外部電気回路から供給される駆動信号に基づいて光半導体素子に所定の光励起を起こさせ、該励起した光を透光性部材を介し光ファイバー部材に授受させるとともに該光ファイバー部材の光ファイバー内を伝達させることによって高速通信等に使用される。
【0004】
また上述の光半導体素子収納用パッケージは、筒状固定部材の基体へのロウ付け取着が下記の方法によって行われている。即ち、
(1)まず筒状固定部材の表面に、基体へのロウ付け取着を確実、強固とするためにニッケルめっき層及び金めっき層を順次被着させる。
【0005】
前記ニッケルめっき層は筒状固定部材への金めっき層の被着を強固とするための下地部材であり、電解めっき法や無電解めっき法を採用することによって筒状固定部材の外表面に約0.5〜5μmの厚みに被着される。
【0006】
また前記金めっき層は筒状固定部材に対するロウ材の濡れ性を良好とする作用をなし、電解めっき法や無電解めっき法を採用することによってニッケルめっき層上に約1〜3μmの厚みに被着される。
【0007】
(2)次に前記筒状固定部材の内部に透光性部材をガラスを介して取着し、筒状固定部材の内部を塞ぐ。
【0008】
前記筒状固定部材への透光性部材の取着は筒状固定部材の内部に透光性部材の融点より低い融点を有する、例えば、低融点ハンダガラスを塗布するとともに該塗布した低融点ハンダガラス上に透光性部材を載置し、しかる後、これを大気中、約450℃の温度に加熱し、低融点ガラスを溶融させることによって行われる。
【0009】
(3)そして最後に前記基体の貫通孔周辺の外表面に金―錫合金等からなる低融点ロウ材を介して筒状固定部材をロウ付け取着し、これによって製品としての光半導体素子収納用パッケージが完成する。
【0010】
前記基体への筒状固定部材のロウ付けは基体の貫通孔周辺の外表面に筒状固定部材を、間に金―錫合金(金:80重量%、錫:20重量%)等からなる低融点ロウ材を挟んで載置し、しかる後、これを約300℃の温度に加熱し、低融点ロウ材を溶融させることによって行われる。
【0011】
【発明が解決しようとする課題】
しかしながら、この従来の光半導体素子収納用パッケージの製造方法においては、筒状固定部材の内部に透光性部材をガラスを介して取着させる際、ガラス付けの熱及び雰囲気によって筒状固定部材の外表面に被着されているニッケルめっき層の一部が金めっき層中を拡散するとともに金めっき層表面に露出し、これが酸化されて金めっき層表面に酸化ニッケルが多量に形成されていまい、その結果、前記酸化ニッケルはロウ材との濡れ性が悪いことから筒状固定部材に対するロウ材の接合強度が大幅に低下し、基体に筒状固定部材を強固にロウ付け取着することができないという欠点を有していた。
【0012】
そこで上記欠点を解消するために筒状固定部材の内部に透光性部材をガラスを介して取着させた後に筒状固定部材の表面にニッケルめっき層及び金めっき層を順次被着させることが考えられる。
【0013】
しかしながら、前記筒状固定部材の内部に透光性部材を取着させるガラスは低融点ハンダガラスであり、該低融点ハンダガラスは耐薬品性に劣ることから筒状固定部材の内部に透光性部材をガラスを介して取着させた後、筒状固定部材の表面にニッケルめっき層及び金めっき層を被着させるとガラスがめっき液の薬品によって溶け、その結果、透光性部材が筒状固定部材より外れてしまうという欠点が誘発される。
【0014】
本発明は上記欠点に鑑み案出されたもので、その目的は基体に筒状固定部材を強固にロウ付け取着し、信頼性を極めて高いものとなした光半導体素子収納用パッケージの製造方法を提供することにある。
【0015】
【課題を解決するための手段】
本発明は、上面に光半導体素子を収容するための凹部を有する基体と、該基体の側部に形成された貫通孔と、前記基体の貫通孔周辺の外表面にロウ付けされ、一端に光ファイバー部材が接続される筒状の金属製固定部材と、前記筒状の金属製固定部材の内部に取着され、金属製固定部材の内部を塞ぐ透光性部材と、前記基体の上面に取着され、前記凹部を塞ぐ蓋体とから成る光半導体素子収納用パッケージであって、前記筒状の金属製固定部材が下記(a)乃至(d)の工程によって基体の貫通孔周辺の外表面にロウ付けされていることを特徴とするものである。
【0016】
(a)金属製固定部材の表面にニッケルめっき層と金めっき層を順次被着させる工程、(b)金属製固定部材の内部に、透光性部材より融点の低いガラスを塗布し、該ガラスに透光性部材を載置して加熱処理を施すことにより、金属製固定部材の内部にガラスを介して透光性部材を取着する工程、(c)金属製固定部材を還元雰囲気中で加熱処理する工程、(d)金属製固定部材の他端を基体の貫通孔に挿入し、金属製固定部材のフランジを基体の貫通孔周辺の外表面にロウ材を介してロウ付け取着する工程。
【0017】
本発明の光半導体素子収納用パッケージの製造方法によれば、金属製固定部材に透光性部材をガラスを介して取着した後、金属製固定部材を還元雰囲気中で加熱処理するため金めっき層の表面に下地のニッケルめっき層の拡散および酸化によってロウ材と濡れ性が悪い酸化ニッケルが多量に形成されているとしても該酸化ニッケルは還元によって完全に除去されることとなり、その結果、筒状の金属製固定部材に対するロウ材の接合強度が大幅に向上し、基体に筒状の金属製固定部材を極めて強固にロウ付け取着することができる。
【0018】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
図1乃至図4は本発明の製造方法によって作製された光半導体素子収納用パッケージの一実施例を示し、1は基体、2は蓋体である。この基体1と蓋体2とで内部に光半導体素子3を収容するための容器が構成される。
【0019】
前記基体1はその上面に光半導体素子3を収容するための空所を形成する凹部1aが設けてあり、該凹部1a底面には光半導体素子3が搭載固定される。
【0020】
前記基体1は、例えば、酸化アルミニウム質焼結体等のセラミックスより成り、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダー、溶剤等を添加混合して泥漿物を作るとともに、該泥漿物をドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート(セラミック生シート)となし、しかる後、前記セラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを複数枚積層し、約1500℃の温度で焼成することによって製作される。
【0021】
また前記基体1は凹部1aの内面から基体1の外側面にかけて複数個の配線層4が被着形成されており、該配線層4の凹部1a内に露出する領域には光半導体素子3の各電極がボンディングワイヤ5を介して電気的に接続され、また基体1の外側面に形成されている領域には外部電気回路と接続される外部リード端子6が銀ロウ等のロウ材を介してロウ付け取着されている。
【0022】
前記配線層4は光半導体素子3の各電極を外部電気回路に接続する際の導電路として作用し、タングステンやモリブデン、マンガン等の高融点金属粉末により形成されている。
【0023】
前記配線層4は、例えば、タングステンやモリブデン、マンガン等の高融点金属粉末に適当な有機バインダー、溶剤等を添加混合して得た金属ペーストを基体1となるセラミックグリーンシートに予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておくことによって基体1の凹部1a内から基体1の外側面にかけて被着形成される。
【0024】
また前記配線層4はその露出する表面にニッケル、金等の耐蝕性に優れ、かつロウ材との濡れ性に優れる金属を1μm乃至20μmの厚みにメッキ法により被着させておくと、配線層4の酸化腐蝕を有効に防止することができるとともに配線層4への外部リード端子6のロウ付けを強固となすことができる。従って、前記配線層4はその露出する表面にニッケル、金等の耐蝕性に優れ、かつロウ材との濡れ性に優れる金属を1μm乃至20μmの厚みに被着させておくことが好ましい。
【0025】
更に前記配線層4には外部リード端子6が銀ロウ等のロウ材を介してロウ付け取着されており、該外部リード端子6は容器内部に収容する光半導体素子3の各電極を外部電気回路に電気的に接続する作用をなし、外部リード端子6を外部電気回路に接続することによって容器内部に収容される光半導体素子3は配線層4及び外部リード端子6を介して外部電気回路に接続されることとなる。
【0026】
前記外部リード端子6は鉄ーニッケルーコバルト合金や鉄ーニッケル合金等の金属材料からなり、例えば、鉄ーニッケルーコバルト合金等の金属材料から成るインゴット(塊)に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことによって所定の形状に形成される。
【0027】
前記外部リード端子6はまたその露出する表面にニッケル、金等の耐蝕性に優れ、かつロウ材との濡れ性に優れる金属を1μm乃至20μmの厚みにメッキ法により被着させておくと、外部リード端子6の酸化腐蝕を有効に防止することができるとともに外部リード端子6を外部電気回路に接続する際、その接続を確実、強固となすことができる。従って、前記外部リード端子6はその露出する表面にニッケル、金等の耐蝕性に優れ、かつロウ材との濡れ性に優れる金属を1μm乃至20μmの厚みに被着させておくことが好ましい。
【0028】
前記外部リード端子6が取着された基体1はまたその側部に貫通孔1bが形成されており、貫通孔1bには筒状の金属製固定部材8が挿入固定され、更に金属製固定部材8の内側の一部には透光性部材9が取着されている。
【0029】
前記基体1の側部に形成されている貫通孔1bは、例えば、基体1となるセラミッググリーンシートに予め打ち抜き加工法により孔を形成しておくことによって、或いは基体1の側部に孔あけ加工を施すことによって基体1の側部に所定形状に形成される。
【0030】
また前記基体1の外側面で貫通孔1bの周辺には筒状の金属製固定部材8が取着されており、該金属製固定部材8は、光ファイバー部材11を基体1に固定する際の下地固定部材として作用するとともに光半導体素子3が励起した光を光ファイバー部材11に伝達させる作用をなし、鉄ーニッケルーコバルト合金や鉄ーニッケル合金等の金属材料で形成されている。
【0031】
なお、前記金属製固定部材8は、例えば、鉄ーニッケルーコバルト合金等のインゴット(塊)をプレス加工により筒状とすることによって形成される。
【0032】
また前記金属製固定部材8の基体1外側面への取着は、基体1の外側面で貫通孔1bの周辺に予めタングステンやモリブデン等からなる金属層を被着させておき、該金属層に筒状の金属製固定部材8に設けたフランジをロウ付けすることによって行われる。
【0033】
更に前記筒状の金属製固定部材8は、その内側の一部に透光性部材9が取着されており、該透光性部材9は金属製固定部材8の内側を塞ぎ、基体1と蓋体2とからなる容器の気密封止を保持させるとともに金属製固定部材8の内部空間を伝達する光半導体素子3の励起した光をそのまま金属製固定部材8に取着接続される光ファイバー部材11に伝達させる作用をなす。
【0034】
前記透光性部材9は、例えば、酸化珪素、酸化鉛を主成分とした鉛系及びホウ酸、ケイ砂を主成分としたホウケイ酸系の非晶質ガラスで形成されており、該非晶質ガラスは結晶軸が存在しないことから光半導体素子3の励起する光を透光性部材9を通過させて光ファイバー部材11に授受させる場合、光半導体素子3の励起した光は透光性部材9で複屈折を起こすことはなくそのまま光ファイバー部材11に授受されることとなり、その結果、光半導体素子3が励起した光の光ファイバー部材11への授受が高効率となって光信号の伝送効率を高いものとなすことができる。
【0035】
前記筒状の金属製固定部材8は更にその外側の一端に光ファイバー部材11に取着されているフランジがYAG等のレーザー光線を使用して溶接され、これによって光半導体素子3に光信号を伝達するための光ファイバー部材11が基体1に固定されることとなる。
【0036】
また更に前記基体1の上面には、例えば、鉄ーニッケルーコバルト合金や鉄ーニッケル合金等の金属材料から成る蓋体2が接合され、これによって基体1と蓋体2とからなる容器の内部に光半導体素子3が気密に封止されることとなる。
【0037】
前記蓋体2は、例えば、鉄ーニッケルーコバルト合金等のインゴット(塊)に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことによって所定の形状に形成される。
【0038】
かくして本発明の光半導体素子収納用パッケージによれば、基体1の凹部1aに光半導体素子3を載置固定するとともに光半導体素子3の各電極をボンデイングワイヤ5を介して配線層4に電気的に接続し、次に基体1の上面に蓋体2を接合させ、基体1と蓋体2とから成る容器内部に光半導体素子3を収容し、最後に基体1に取着させた筒状の金属製固定部材8に光ファイバー部材11を取着接続させることによって最終製品としての光半導体装置となる。
【0039】
かかる光半導体装置は外部電気回路から供給される駆動信号に基づいて光半導体素子3に所定の光励起を起こさせ、該励起した光を透光性部材9を介し光ファイバー部材11に授受させるとともに該光ファイバー部材11の光フアイバー内を伝達させることによって高速通信等に使用される。
【0040】
次に前記光半導体素子収納用パッケージにおける金属製固定部材の基体への取着について図5(a)乃至(c)に基づき説明する。
まず図5(a)に示すごとく、筒状の金属製固定部材8の表面に、基体1へのロウ付け取着を確実、強固とするためにニッケルめっき層12及び金めっき層13を順次被着させる。
【0041】
前記ニッケルめっき層12は金属製固定部材8への金めっき層13の被着を強固とするための下地部材であり、電解めっき法や無電解めっき法を採用することによって金属製固定部材8の表面に約0.5〜5μmの厚みに被着される。
【0042】
前記ニッケルめっき層12はこれを電解めっき法を採用することによって形成する場合、金属製固定部材8を、例えば、硫酸ニッケル、塩化ニッケル、ホウ酸(NiSO4 ・6H2 O+NiCl2 +6H2 O+H3 BO3 )からなるニッケルめっき浴中に浸漬するとともに金属製固定部材8に電流密度0.1〜2A/dm2 程度のめっき用電力を印加することによって行われる。
【0043】
また前記金めっき層13は金属製固定部材8に対するロウ材の濡れ性を良好とする作用をなし、電解めっき法や無電解めっき法を採用することによってニッケルめっき層上に約1〜3μmの厚みに被着される。
【0044】
前記金めっき層13はこれを電解めっき法を採用することによって形成する場合、表面にニッケルめっき層12が被着された金属製固定部材8を、例えば、シアン化金カリウムおよび燐酸カリウムからなる金めっき浴中に浸漬するとともに金属製固定部材8に電流密度0.2〜1.5A/dm2 程度のめっき用電力を印加することによって行われる。
【0045】
次に図5(b)に示すごとく、前記金属製固定部材8の内部に透光性部材9をガラス14を介して取着し、金属製固定部材8の内部を塞ぐ。
【0046】
前記金属製固定部材8への透光性部材9の取着は金属製固定部材8の内部に透光性部材9の融点より低い融点を有する、例えば、低融点ハンダガラス14を塗布するとともに該塗布した低融点ハンダガラス14上に透光性部材9を載置し、しかる後、これを大気中、約450℃の温度に加熱し、低融点ハンダガラス14を溶融させることによって行われる。この場合、ガラス付けの熱及び雰囲気によって金属製固定部材8の表面に被着されているニッケルめっき層12はその一部が金めっき層13中を拡散して金めっき層13の表面に露出し、該金めっき層13の表面に露出したニッケルは酸化され酸化ニッケルとなって金めっき層13表面に多量に形成されてしまう。
【0047】
次に前記金属製固定部材8を還元雰囲気中で加熱処理し、金めっき層13の表面に多量に形成されている酸化ニッケルを還元し、除去する。
【0048】
前記還元雰囲気としては水素雰囲気、窒素雰囲気、或いは水素と窒素の混合雰囲気が好適であり、加熱処理の温度としては金属製固定部材8に透光性部材9を取着するガラス14の融点よりも低い温度、例えば、200〜420℃の範囲がよい。
【0049】
前記金属製固定部材8は金めっき層13の表面に形成されているロウ材に対し濡れ性が悪い酸化ニッケルが還元雰囲気中での加熱処理によって除去されることから金めっき層13のロウ材に対する濡れ性は極めて良好なものとなっている。
【0050】
そして最後に前記金属製固定部材8を基体1の貫通孔1b周辺に予め被着させておいた金属層にロウ材15を介しロウ付け取着することによって図5(c)に示すごとく基体1への金属製固定部材8のロウ付け取着が完了する。
【0051】
前記金属製固定部材8の基体1へのロウ付け取着は基体1の貫通孔1b周辺に被着されている金属層上に間に金―錫合金(金:80重量%、錫:20重量%)等からなる低融点のロウ材15を挟んで載置し、しかる後、これを約300℃の温度に加熱し、低融点のロウ材15を溶融させることによって行われる。この場合、金属製固定部材8は金めっき層13の表面に形成されているロウ材に対し濡れ性が悪い酸化ニッケルが還元雰囲気中での加熱処理によって除去されていることから金めっき層13とロウ材15とは極めて強固に接合し、これによって金属製固定部材8は基体1に極めて強固にロウ付け取着されることとなる。
【0052】
なお、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば、上述の実施例では、光半導体素子3が光を励起する場合について説明したが、これが光ファイバー部材11を介して伝達された光を光半導体素子3が電気信号に変換し、該変換された電気信号を外部に取り出すようにした場合にも適用可能である。
【0053】
また上述の実施例では基体1を酸化アルミニウム質焼結体等のセラミックスで形成したが、これを鉄―ニッケル―コバルト合金等の金属材料で形成してもよい。
【0054】
【発明の効果】
本発明の光半導体素子収納用パッケージの製造方法によれば、金属製固定部材に透光性部材をガラスを介して取着した後、金属製固定部材を還元雰囲気中で加熱処理するため金めっき層の表面に下地のニッケルめっき層の拡散および酸化によってロウ材と濡れ性が悪い酸化ニッケルが多量に形成されているとしても該酸化ニッケルは還元雰囲気中での加熱処理によって完全に除去されることとなり、その結果、筒状の金属製固定部材に対するロウ材の接合強度が大幅に向上し、基体に筒状の金属製固定部材を極めて強固にロウ付け取着することができる。
【図面の簡単な説明】
【図1】本発明の光半導体素子収納用パッケージの一実施例を示す断面図である。
【図2】図1に示す光半導体素子収納用パッケージの要部断面図である。
【図3】図1に示す光半導体素子収納用パッケージの側面図である。
【図4】図1に示す光半導体素子収納用パッケージの蓋体を除いた状態の平面図である。
【図5】(a)乃至(c)は図1に示す光半導体素子収納用パッケージの金属製固定部材を基体にロウ付け取着する際の各工程毎の要部断面図である。
【符号の説明】
1・・・基体
1a・・凹部
1b・・貫通孔
2・・・蓋体
3・・・光半導体素子
4・・・配線層
8・・・筒状の金属製固定部材
9・・・透光性部材
11・・・光ファイバー部材
12・・・ニッケルめっき層
13・・・金めっき層
14・・・ガラス
15・・・ロウ材
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical semiconductor element accommodation package for accommodating an optical semiconductor element.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an optical semiconductor element housing package for accommodating an optical semiconductor element is generally made of a ceramic material such as an aluminum oxide sintered body, and has a base having a recess for accommodating the optical semiconductor element on the upper surface, and the base. And an iron-nickel alloy (iron: 50% by weight, nickel: having a space in which a light signal is transmitted to the inside through a through hole formed in the side portion of the substrate and brazed to the outer surface around the through hole of the base. A cylindrical fixing member made of a metal material such as 50 wt%, a translucent member for closing the inside of the cylindrical fixing member attached to the inside of the cylindrical fixing member via glass, A plurality of wiring conductors made of tungsten, molybdenum, manganese, etc., deposited and led from the inside to the outer surface of the recess, and to which the electrodes of the optical semiconductor element are connected through electrical connection means such as bonding wires And a lid that is attached to the upper surface of the base and closes the recess, and the optical semiconductor element is bonded and fixed in the recess of the base via an adhesive such as glass, resin, or brazing material. At the same time, each electrode of the optical semiconductor element is electrically connected to the wiring conductor layer through an electrical connection means such as a bonding wire, and then the lid is formed of glass, resin, brazing material or the like on the upper surface of the base. The product is formed by bonding through a sealing material, and the optical semiconductor element is hermetically accommodated inside a container composed of a base and a lid, and an optical fiber member is welded and connected to a cylindrical fixing member using a laser beam such as YAG. As an optical semiconductor device.
[0003]
Such an optical semiconductor device causes a predetermined optical excitation to occur in an optical semiconductor element based on a drive signal supplied from an external electric circuit, and transmits and receives the excited light to an optical fiber member through a translucent member. It is used for high-speed communication etc. by transmitting the inside.
[0004]
Further, in the above-described optical semiconductor element housing package, the cylindrical fixing member is attached to the base by brazing by the following method. That is,
(1) First, a nickel plating layer and a gold plating layer are sequentially deposited on the surface of the cylindrical fixing member in order to ensure and securely braze the substrate.
[0005]
The nickel plating layer is a base member for strengthening the adhesion of the gold plating layer to the cylindrical fixing member. By adopting an electrolytic plating method or an electroless plating method, the nickel plating layer is formed on the outer surface of the cylindrical fixing member. Deposited to a thickness of 0.5-5 μm.
[0006]
The gold plating layer has an effect of improving the wettability of the brazing material with respect to the cylindrical fixing member. By adopting an electrolytic plating method or an electroless plating method, the gold plating layer has a thickness of about 1 to 3 μm on the nickel plating layer. Worn.
[0007]
(2) Next, a translucent member is attached to the inside of the cylindrical fixing member via glass to close the inside of the cylindrical fixing member.
[0008]
The translucent member is attached to the cylindrical fixing member. The translucent member has a melting point lower than that of the translucent member, for example, a low melting point solder glass is applied and the applied low melting point solder is applied. The translucent member is placed on the glass and then heated to a temperature of about 450 ° C. in the atmosphere to melt the low melting point glass.
[0009]
(3) Finally, a cylindrical fixing member is brazed and attached to the outer surface around the through hole of the substrate via a low melting point brazing material made of gold-tin alloy or the like, thereby accommodating an optical semiconductor element as a product. The package for is completed.
[0010]
The cylindrical fixing member is brazed to the base body with a cylindrical fixing member on the outer surface around the through hole of the base body and a gold-tin alloy (gold: 80% by weight, tin: 20% by weight) or the like. The melting point brazing material is placed, and then heated to a temperature of about 300 ° C. to melt the low melting point brazing material.
[0011]
[Problems to be solved by the invention]
However, in this conventional method for manufacturing a package for housing an optical semiconductor element, when the translucent member is attached to the inside of the cylindrical fixing member through glass, the cylindrical fixing member is heated by the heat and atmosphere of the glass. A part of the nickel plating layer deposited on the outer surface diffuses in the gold plating layer and is exposed to the gold plating layer surface, which is oxidized and a large amount of nickel oxide is formed on the gold plating layer surface. As a result, since the nickel oxide has poor wettability with the brazing material, the bonding strength of the brazing material to the cylindrical fixing member is greatly reduced, and the cylindrical fixing member cannot be firmly brazed to the base. Had the disadvantages.
[0012]
Therefore, in order to eliminate the above disadvantages, a light-transmitting member is attached to the inside of the cylindrical fixing member via glass, and then a nickel plating layer and a gold plating layer are sequentially applied to the surface of the cylindrical fixing member. Conceivable.
[0013]
However, the glass for attaching the translucent member to the inside of the cylindrical fixing member is a low melting point solder glass, and the low melting point solder glass is inferior in chemical resistance. After attaching the member through the glass, if the nickel plating layer and the gold plating layer are deposited on the surface of the cylindrical fixing member, the glass is melted by the chemical of the plating solution, and as a result, the translucent member is cylindrical. The disadvantage of coming off the fixing member is induced.
[0014]
The present invention has been devised in view of the above-described drawbacks, and its object is to manufacture a package for housing an optical semiconductor element in which a cylindrical fixing member is firmly brazed and attached to a base, and the reliability is extremely high. Is to provide.
[0015]
[Means for Solving the Problems]
The present invention includes a base having a recess for accommodating an optical semiconductor element on an upper surface, a through hole formed in a side portion of the base, an outer surface around the through hole of the base, and an optical fiber at one end A cylindrical metal fixing member to which the member is connected, a translucent member attached to the inside of the cylindrical metal fixing member and closing the inside of the metal fixing member, and attached to the upper surface of the base And an optical semiconductor element housing package comprising a lid for closing the recess, wherein the cylindrical metal fixing member is formed on the outer surface around the through-hole of the base body by the following steps (a) to (d). It is characterized by being brazed.
[0016]
(A) a step of sequentially depositing a nickel plating layer and a gold plating layer on the surface of the metal fixing member; (b) applying a glass having a melting point lower than that of the translucent member to the inside of the metal fixing member; (C) the step of attaching the translucent member to the inside of the metal fixing member through the glass by placing the translucent member on the heat treatment, and (c) the metal fixing member in a reducing atmosphere. (D) The other end of the metal fixing member is inserted into the through hole of the base, and the flange of the metal fixing member is brazed to the outer surface around the through hole of the base via a brazing material. Process.
[0017]
According to the method for manufacturing a package for housing an optical semiconductor element of the present invention, after attaching a translucent member to a metal fixing member via glass, gold plating is performed to heat-treat the metal fixing member in a reducing atmosphere. Even if a large amount of nickel oxide having poor wettability and brazing material is formed on the surface of the layer by diffusion and oxidation of the underlying nickel plating layer, the nickel oxide is completely removed by reduction. As a result, the bonding strength of the brazing material to the metallic fixing member in the form of a metal is greatly improved, and the cylindrical metallic fixing member can be brazed and attached to the base very firmly.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
1 to 4 show an embodiment of a package for housing an optical semiconductor element manufactured by the manufacturing method of the present invention, where 1 is a base and 2 is a lid. The base body 1 and the lid body 2 constitute a container for housing the optical semiconductor element 3 therein.
[0019]
The base 1 is provided with a recess 1a that forms a space for accommodating the optical semiconductor element 3 on the upper surface thereof, and the optical semiconductor element 3 is mounted and fixed on the bottom surface of the recess 1a.
[0020]
The substrate 1 is made of ceramics such as an aluminum oxide sintered body, for example, and an appropriate organic binder, solvent, etc. are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. The slurry is made into a ceramic green sheet (ceramic green sheet) by adopting a doctor blade method or a calender roll method, and then, the ceramic green sheet is appropriately punched and laminated. And is fired at a temperature of about 1500 ° C.
[0021]
The substrate 1 has a plurality of wiring layers 4 deposited from the inner surface of the recess 1 a to the outer surface of the substrate 1, and each region of the optical semiconductor element 3 is exposed in the recess 1 a of the wiring layer 4. Electrodes are electrically connected via bonding wires 5, and external lead terminals 6 connected to external electric circuits are brazed via a brazing material such as silver brazing in a region formed on the outer surface of the substrate 1. It is attached.
[0022]
The wiring layer 4 functions as a conductive path for connecting each electrode of the optical semiconductor element 3 to an external electric circuit, and is formed of a refractory metal powder such as tungsten, molybdenum, or manganese.
[0023]
For example, the wiring layer 4 is made of a conventionally known screen in advance on a ceramic green sheet serving as the substrate 1 by adding and mixing a suitable organic binder, solvent, etc. to a refractory metal powder such as tungsten, molybdenum or manganese. By printing and applying a predetermined pattern by a printing method, the substrate 1 is deposited from the inside of the recess 1a to the outer surface of the substrate 1.
[0024]
The wiring layer 4 is formed by depositing a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by plating. 4 can be effectively prevented, and the brazing of the external lead terminal 6 to the wiring layer 4 can be strengthened. Therefore, the wiring layer 4 is preferably coated with a metal having a thickness of 1 μm to 20 μm, which has excellent corrosion resistance, such as nickel and gold, and excellent wettability with the brazing material, on the exposed surface.
[0025]
Furthermore, external lead terminals 6 are brazed and attached to the wiring layer 4 via a brazing material such as silver solder, and the external lead terminals 6 connect the electrodes of the optical semiconductor element 3 accommodated in the container to external electrical terminals. The optical semiconductor element 3 which is electrically connected to the circuit and is accommodated in the container by connecting the external lead terminal 6 to the external electric circuit is connected to the external electric circuit via the wiring layer 4 and the external lead terminal 6. Will be connected.
[0026]
The external lead terminal 6 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy. For example, an ingot made of a metal material such as iron-nickel-cobalt alloy is rolled or punched. Then, it is formed into a predetermined shape by applying a conventionally known metal processing method.
[0027]
Further, the external lead terminal 6 is formed by depositing a metal having excellent corrosion resistance such as nickel and gold on the exposed surface and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by plating. The oxidation corrosion of the lead terminal 6 can be effectively prevented, and when the external lead terminal 6 is connected to the external electric circuit, the connection can be surely and strengthened. Therefore, it is preferable that a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with the brazing material is deposited on the exposed surface of the external lead terminal 6 to a thickness of 1 μm to 20 μm.
[0028]
The base body 1 to which the external lead terminal 6 is attached is also formed with a through hole 1b on its side, and a cylindrical metal fixing member 8 is inserted and fixed in the through hole 1b. A translucent member 9 is attached to a part of the inside of 8.
[0029]
The through hole 1b formed in the side portion of the base body 1 is formed, for example, by forming a hole in a ceramic green sheet to be the base body 1 in advance by a punching method or in the side portion of the base body 1. By processing, it is formed in a predetermined shape on the side portion of the substrate 1.
[0030]
A cylindrical metal fixing member 8 is attached to the periphery of the through-hole 1b on the outer surface of the base 1, and the metal fixing member 8 is a base for fixing the optical fiber member 11 to the base 1. It functions as a fixing member and transmits light excited by the optical semiconductor element 3 to the optical fiber member 11, and is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy.
[0031]
The metal fixing member 8 is formed, for example, by forming an ingot (lumb) such as an iron-nickel-cobalt alloy into a cylindrical shape by pressing.
[0032]
Further, the metal fixing member 8 is attached to the outer surface of the base 1 by previously attaching a metal layer made of tungsten, molybdenum, or the like around the through hole 1b on the outer surface of the base 1, and then attaching the metal layer to the metal layer. This is performed by brazing a flange provided on the cylindrical metal fixing member 8.
[0033]
Further, the cylindrical metal fixing member 8 has a translucent member 9 attached to a part of the inside thereof, and the translucent member 9 closes the inner side of the metal fixing member 8 and An optical fiber member 11 that holds the hermetic seal of the container formed of the lid 2 and is connected to the metallic fixing member 8 as it is by the excited light of the optical semiconductor element 3 that transmits the internal space of the metallic fixing member 8. It acts to transmit to.
[0034]
The translucent member 9 is made of, for example, lead-based silicon oxide, lead oxide containing lead oxide as a main component and boric acid-based amorphous glass containing siliceous sand as a main component. Since glass has no crystal axis, when the light excited by the optical semiconductor element 3 passes through the light transmissive member 9 and is transferred to the optical fiber member 11, the light excited by the optical semiconductor element 3 is transmitted by the light transmissive member 9. Birefringence does not occur and the light is transmitted to the optical fiber member 11 as it is. As a result, transmission / reception of the light excited by the optical semiconductor element 3 to the optical fiber member 11 becomes highly efficient and the transmission efficiency of the optical signal is high. Can be
[0035]
The cylindrical metal fixing member 8 has a flange attached to an optical fiber member 11 at one end on the outer side thereof and is welded using a laser beam such as YAG, thereby transmitting an optical signal to the optical semiconductor element 3. Therefore, the optical fiber member 11 is fixed to the base 1.
[0036]
Further, a lid body 2 made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy is joined to the upper surface of the base body 1, whereby the inside of the container composed of the base body 1 and the lid body 2 is joined. The optical semiconductor element 3 is hermetically sealed.
[0037]
The lid 2 is formed in a predetermined shape by applying a conventionally known metal processing method such as a rolling method or a punching method to an ingot (lumb) such as an iron-nickel-cobalt alloy.
[0038]
Thus, according to the optical semiconductor element housing package of the present invention, the optical semiconductor element 3 is placed and fixed in the recess 1a of the base 1, and each electrode of the optical semiconductor element 3 is electrically connected to the wiring layer 4 via the bonding wires 5. Next, the lid body 2 is joined to the upper surface of the base body 1, the optical semiconductor element 3 is accommodated inside the container composed of the base body 1 and the lid body 2, and finally attached to the base body 1. By attaching and connecting the optical fiber member 11 to the metal fixing member 8, an optical semiconductor device as a final product is obtained.
[0039]
Such an optical semiconductor device causes a predetermined optical excitation of the optical semiconductor element 3 based on a drive signal supplied from an external electric circuit, and transmits and receives the excited light to and from the optical fiber member 11 via the translucent member 9. It is used for high-speed communication or the like by transmitting the inside of the optical fiber of the member 11.
[0040]
Next, attachment of the metal fixing member to the base in the optical semiconductor element housing package will be described with reference to FIGS.
First, as shown in FIG. 5 (a), a nickel plating layer 12 and a gold plating layer 13 are sequentially coated on the surface of a cylindrical metal fixing member 8 in order to ensure and secure brazing to the base 1. Put on.
[0041]
The nickel plating layer 12 is a base member for strengthening the adherence of the gold plating layer 13 to the metal fixing member 8. By adopting an electrolytic plating method or an electroless plating method, the nickel plating layer 12 It is applied to the surface to a thickness of about 0.5-5 μm.
[0042]
When the nickel plating layer 12 is formed by adopting an electrolytic plating method, the metal fixing member 8 is made of, for example, nickel sulfate, nickel chloride, boric acid (NiSO 4 .6H 2 O + NiCl 2 + 6H 2 O + H 3 BO). 3 ) and is applied by applying a plating power having a current density of about 0.1 to 2 A / dm 2 to the metal fixing member 8 while being immersed in the nickel plating bath.
[0043]
The gold plating layer 13 has an effect of improving the wettability of the brazing material with respect to the metal fixing member 8, and has a thickness of about 1 to 3 μm on the nickel plating layer by employing an electrolytic plating method or an electroless plating method. To be attached.
[0044]
When the gold plating layer 13 is formed by adopting an electrolytic plating method, a metal fixing member 8 having a nickel plating layer 12 deposited on the surface thereof, for example, gold gold consisting of potassium gold cyanide and potassium phosphate is used. It is performed by immersing in a plating bath and applying a plating power having a current density of about 0.2 to 1.5 A / dm 2 to the metal fixing member 8.
[0045]
Next, as shown in FIG. 5B, the translucent member 9 is attached to the inside of the metal fixing member 8 through the glass 14 to close the inside of the metal fixing member 8.
[0046]
The translucent member 9 is attached to the metal fixing member 8 by applying a low melting point solder glass 14 having a melting point lower than the melting point of the translucent member 9 to the inside of the metal fixing member 8. The translucent member 9 is placed on the applied low melting point solder glass 14 and then heated to a temperature of about 450 ° C. in the atmosphere to melt the low melting point solder glass 14. In this case, a part of the nickel plating layer 12 deposited on the surface of the metal fixing member 8 by the heat and atmosphere of glass is diffused in the gold plating layer 13 and exposed to the surface of the gold plating layer 13. The nickel exposed on the surface of the gold plating layer 13 is oxidized and becomes nickel oxide, and a large amount is formed on the surface of the gold plating layer 13.
[0047]
Next, the metal fixing member 8 is heat-treated in a reducing atmosphere to reduce and remove nickel oxide formed in a large amount on the surface of the gold plating layer 13.
[0048]
The reducing atmosphere is preferably a hydrogen atmosphere, a nitrogen atmosphere, or a mixed atmosphere of hydrogen and nitrogen, and the temperature of the heat treatment is higher than the melting point of the glass 14 that attaches the translucent member 9 to the metal fixing member 8. A low temperature, for example, a range of 200 to 420 ° C is preferable.
[0049]
Since the metal fixing member 8 has nickel oxide having poor wettability with respect to the brazing material formed on the surface of the gold plating layer 13 removed by heat treatment in a reducing atmosphere, The wettability is extremely good.
[0050]
Finally, the metal fixing member 8 is brazed and attached to a metal layer in which the metal fixing member 8 is preliminarily attached to the periphery of the through hole 1b of the base 1 via a brazing material 15 as shown in FIG. The brazing attachment of the metal fixing member 8 to the end is completed.
[0051]
The metal fixing member 8 is brazed and attached to the base body 1 by placing a gold-tin alloy (gold: 80% by weight, tin: 20% by weight) on the metal layer deposited around the through hole 1b of the base body 1. %) And the like, and then, the low melting point brazing material 15 is heated to a temperature of about 300 ° C. to melt the low melting point brazing material 15. In this case, since the metallic fixing member 8 has nickel oxide having poor wettability with respect to the brazing material formed on the surface of the gold plating layer 13 removed by heat treatment in a reducing atmosphere, The brazing material 15 is joined very firmly, whereby the metal fixing member 8 is brazed and attached to the base 1 very firmly.
[0052]
It should be noted that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiments, the optical semiconductor element 3 is optical. However, this is also applicable to the case where the light transmitted through the optical fiber member 11 is converted into an electrical signal by the optical semiconductor element 3 and the converted electrical signal is extracted to the outside. It is.
[0053]
In the above-described embodiment, the substrate 1 is formed of a ceramic such as an aluminum oxide sintered body, but it may be formed of a metal material such as an iron-nickel-cobalt alloy.
[0054]
【The invention's effect】
According to the method for manufacturing a package for housing an optical semiconductor element of the present invention, after attaching a translucent member to a metal fixing member via glass, gold plating is performed to heat-treat the metal fixing member in a reducing atmosphere. Even if a large amount of nickel oxide with poor wettability is formed on the surface of the layer by diffusion and oxidation of the underlying nickel plating layer, the nickel oxide must be completely removed by heat treatment in a reducing atmosphere. As a result, the bonding strength of the brazing material to the cylindrical metal fixing member is greatly improved, and the cylindrical metal fixing member can be brazed and attached to the base very firmly.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of an optical semiconductor element housing package of the present invention.
2 is a fragmentary cross-sectional view of the optical semiconductor element housing package shown in FIG. 1;
3 is a side view of the optical semiconductor element housing package shown in FIG. 1. FIG.
4 is a plan view of the optical semiconductor element housing package shown in FIG. 1 with a cover removed. FIG.
5 (a) to 5 (c) are cross-sectional views of the main part of each process when the metal fixing member of the optical semiconductor element housing package shown in FIG. 1 is brazed to the base.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Base | substrate 1a .. Recessed part 1b .. Through-hole 2 ... Cover body 3 ... Optical semiconductor element 4 ... Wiring layer 8 ... Cylindrical metal fixing member 9 ... Translucent Member 11 ... optical fiber member 12 ... nickel plating layer 13 ... gold plating layer 14 ... glass 15 ... brazing material

Claims (2)

上面に光半導体素子を収容するための凹部を有し、側部に貫通孔が形成された基体と、
一端に設けられたフランジが前記基体の前記貫通孔周辺の外表面にロウ付けされているとともに他端が前記基体の前記貫通孔に挿入されており、光ファイバー部材が接続される筒状の金属製固定部材と、
前記金属製固定部材の内部に取着され、前記金属製固定部材の内部を塞ぐ透光性部材と、
前記基体の上面に取着され、前記凹部を塞ぐ蓋体とから成る光半導体素子収納用パッケージの製造方法であって、
前記金属製固定部材の前記フランジ下記(a)から(d)の工程を順次行なうことによって、前記基体の前記貫通孔周辺の外表面にロウ付けされていることを特徴とする光半導体素子収納用パッケージの製造方法。
(a)前記金属製固定部材の表面にニッケルめっき層と金めっき層を順次被着させる工程
(b)前記金属製固定部材の内部に、前記透光性部材より融点の低いガラスを塗布し、該ガラスに前記透光性部材を載置して、加熱処理を施し前記ガラスを溶融させることにより、前記金属製固定部材の内部に前記ガラスを介して前記透光性部材を取着する工程
(c)前記金属製固定部材を還元雰囲気中で加熱処理する工程
(d)前記金属製固定部材の前記他端を前記基体の前記貫通孔に挿入し、前記金属製固定部材のフランジ前記基体の前記貫通孔周辺の外表面にロウ材を介してロウ付け取着する工程。
A substrate have a recess for accommodating the optical semiconductor element, the through-hole on the side is formed on the upper surface,
With flange provided is brazed to the outer surface of the through hole near the base at one end and the other end is inserted into the through hole of the base body, a cylindrical metal fiber member is connected A fixing member made of,
Is attached inside the metal securing member, and the translucent member for closing the interior of said metal securing member,
A method of manufacturing a package for housing an optical semiconductor element comprising a lid attached to an upper surface of the base and closing the recess,
Said flange of said metal securing member, following by sequentially performing the (a) step (d), the optical semiconductor element characterized in that it is brazed to the outer surface of the through hole near the base A method for manufacturing a storage package.
(A) inside the metal securing nickel plated layer on the surface of the member and the step of gold plating layer are sequentially deposited (b) the metal securing member is coated with a glass having a melting point lower than that of the light transmitting member, by placing the translucent member to the glass, heat treatment by melting the glass subjected to the step of attaching the inside the translucent member through the glass of the metal securing member ( c) inserting the other end of the heat treatment, step; (d) metal securing member said metal securing member in a reducing atmosphere in the through hole of the base, the flange of the metal fixing member of the base body a step of brazing attached via a brazing material to the outer surface of the periphery of the above through hole.
前記工程(c)の加熱処理が、前記ガラスの融点より低い温度で行なわれることを特徴とする請求項1記載の光半導体素子収納用パッケージの製造方法。2. The method for manufacturing an optical semiconductor element housing package according to claim 1, wherein the heat treatment in the step (c) is performed at a temperature lower than the melting point of the glass.
JP08052399A 1999-03-24 1999-03-24 Manufacturing method of optical semiconductor element storage package Expired - Fee Related JP3764599B2 (en)

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JPH06268085A (en) * 1993-03-12 1994-09-22 Shinko Electric Ind Co Ltd Cap with window for light transmission
JPH08146276A (en) * 1994-11-16 1996-06-07 Kyocera Corp Holder with lens
JP4053627B2 (en) * 1996-04-25 2008-02-27 松下電器産業株式会社 Communication type computer graphics animation method
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