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JP3771015B2 - Method for treating end of outer semiconductive layer of CV cable - Google Patents
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JP3771015B2 - Method for treating end of outer semiconductive layer of CV cable - Google Patents

Method for treating end of outer semiconductive layer of CV cable Download PDF

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Publication number
JP3771015B2
JP3771015B2 JP26802397A JP26802397A JP3771015B2 JP 3771015 B2 JP3771015 B2 JP 3771015B2 JP 26802397 A JP26802397 A JP 26802397A JP 26802397 A JP26802397 A JP 26802397A JP 3771015 B2 JP3771015 B2 JP 3771015B2
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JP
Japan
Prior art keywords
semiconductive layer
cable
external semiconductive
predetermined position
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26802397A
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Japanese (ja)
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JPH1198672A (en
Inventor
康弘 高橋
和夫 渡辺
洋一 加藤
英文 吉澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Chubu Electric Power Co Inc
Original Assignee
Fujikura Ltd
Chubu Electric Power Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Chubu Electric Power Co Inc filed Critical Fujikura Ltd
Priority to JP26802397A priority Critical patent/JP3771015B2/en
Publication of JPH1198672A publication Critical patent/JPH1198672A/en
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Description

【0001】
【発明の属する技術分野】
この発明は、CVケーブルにおけるフリーストリッピング型外部半導電層端部の処理方法に関するものである。
【0002】
【従来の技術】
接続箱の組立に際して、規定寸法の外部半導電層の端部をはぎ取る必要がある。
フリーストリッピング型の外部半導電層を持つCVケーブルの場合における、従来のはぎ取り法を、図2、図3について述べる。
なお、図2、図3において、
10はCVケーブルの全体、
12はその導体、
14は内部半導電層、
16はケーブル絶縁体、
18は外部半導電層である。
【0003】
外部半導電層のはぎ取りは、次のようにする。
▲1▼図2(a)のように、CVケーブル10の端部の所定位置Aの外部半導電層18に、専用の工具20を使って、切り込み180を入れる。
また、所定位置Aから前方の外部半導電層18に、らせん形の切り込み182を入れる。
【0004】
なお、所定位置Aというのは、その所から前方の外部半導電層18をはぎ取ろうとする位置、言い換えれば、外部半導電層18をはぎ取った後、ケーブル上に残る外部半導電層18の端末となる位置を言う。
【0005】
▲2▼切り込み180,182を入れた部分の外部半導電層18をはき取って、図2(b)のようケーブル絶縁体16を露出させる。
【0006】
▲2▼’あるいは、同図(c)のように、CVケーブル10の母線と平行な切り込み184を入れて、外部半導電層18をはき取り、図2(b)のようにすることもある。
【0007】
ここで、66〜77kV級以上のCVケーブルにフリーストリッピング型外部半導電層を適用する場合は、接続部の電気性能への影響を考慮して、次のような外部半導電層の端部処理等が必要と考えられる。
▲3▼図3(a)のように、外部半導電層18の端部を、ガラス削りの工具22等でペンシリング処理する。
▲4▼それから同図(b)に示す斜線部分をサンドペーパ削りして仕上げる。
▲5▼仕上げた上に、同図(c)のように半導電塗料24を塗布する。
▲6▼最後に同図(d)のように、半導電テープであるACPテープ(CH用)又はCテープ(JB用)26を巻く。
【0008】
【発明が解決しようとする課題】
上記の切り込み180等を工具20で入れるとき、図4(a)のように、工具20の刃200はケーブル絶縁体16に達するところまで入れない。ケーブル絶縁体16を傷つける恐れがあるからである。そのため、切り込み180等の下に、切り残り186ができる。
その結果、外部半導電層18をはぎ取るとき、最終的に、この切り残り186の部分を引きちぎるようになる。
【0009】
そのため、この部分で、図4(b)のように、外部半導電層18の端末が、僅かではあるが、必ず剥離してしまう(図では誇張してあるが)。
また、ペンシリング処理する場合でも、見落としにより剥離部を完全除去できない可能性がある。
さらに、ガラス削り及びサンドペーパー削りのやり方によっては、かえって剥離を大きくする(図4(c)参照)。
【0010】
以上のように、フリーストリッピング型外部半導電層の場合は、外部半導電層端末に剥離が生ずるため、66〜77kV級以上のCVケーブルにフリーストリッピング型外部半導電層の適用を考えた場合には、接続部の電気性能に大きな影響を及ぼすことも懸念される。
【0011】
【課題を解決するための手段】
図1に例示するように、
▲1▼同図(b)に斜線で示す部分について、同図(c)のように所定位置Aとそれより若干後方の適当位置Cとの間の外部半導電層18にペンシリング処理を施すと同時に、所定位置Aから前方の外部半導電層18を若干の長さにわたって削り取り、
▲2▼その後同図(d)のように、削り取った前記部分から先の外部半導電層18をはぎ取る。
【0012】
【発明の実施の態様】
▲1▼実際には、図1(a)のように、まず、所定位置Aから若干距離e(例えば5〜10mm程度)だけ前方に寄った位置Bから、外部半導電層18の前端にかけて、工具20により、らせん状の切り込み182を入れる。
【0013】
▲2▼次に同図(b)に斜線で示す部分について、同図(c)のように所定位置Aから若干の距離f(たととえば10〜20mm程度)だけ後方の位置Cから所定位置Aに向かってガラス削り工具22により、ペンシリング処理を施し、
同時に所定位置Aから若干距離g(例えば約50mm程度)だけ前方のDまでの間の外部半導電層18を削る。
そのとき、同図(c)に示すように、所定位置AからBまでの間は外部半導電層18を完全に削り取ってケーブル絶縁体16を露出させる。
BD間の外部半導電層18はテーパ状にしておいて良い。
【0014】
▲3▼次に同図(c)のように、CVケーブル10の終端から後方に向かって外部半導電層18をはぎ取り、同図(d)のようにする。
【0015】
▲4▼その後は、従来の場合同様に、図3(b)の斜線部分に相当する部分をサンドペーパー削りして仕上げ、
▲5▼仕上げた上に半導電塗料を塗布し(図3(c)参照)、
▲6▼最後に、ACPテープ(CH用)又はCテープ(JB用)を巻く(図3(d)参照)。
【0016】
【発明の効果】
(1)外部半導電層のはぎ取り作業において、最終的に端末を引きちぎる作用がないため、外部半導電層の端末が剥離しない。
(2)端末が剥離しないことから、始めから電気的欠陥が発生する可能性が無く、66〜77kV級以上のCVケーブルへの外部半導電層フリーストリッピング化が可能となる。
(3)外部半導電層のペンシリング作業が同時に行え、最終サンドペーパーがけまで行っても外部半導電層端末が剥離しない。
よって接続箱の電気物性を低下させることなく組立を行うことができる。
【図面の簡単な説明】
【図1】本発明の実施例の説明図。
【図2】従来の外部半導電層端部の処理法における外部半導電層18の剥離までの工法の説明図。
【図3】従来の外部半導電層端部の処理法における外部半導電層18の剥離後の工程の説明図。
【図4】本発明の解決すべき課題の説明図。
【符号の説明】
10 CVケーブル
12 ケーブル導体
14 内部半導電層
16 ケーブル絶縁体
18 外部半導電層
180,182,184 切り込み
186 切り残り
20,22 工具
200 刃
24 半導電塗料
26 テープ
A 所定位置
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for treating an end portion of a free stripping type external semiconductive layer in a CV cable.
[0002]
[Prior art]
When assembling the junction box, it is necessary to peel off the end of the outer semiconductive layer having a prescribed size.
A conventional stripping method in the case of a CV cable having a free stripping type external semiconductive layer will be described with reference to FIGS.
2 and 3,
10 is the whole CV cable,
12 is the conductor,
14 is an internal semiconductive layer,
16 is a cable insulator,
Reference numeral 18 denotes an external semiconductive layer.
[0003]
The external semiconductive layer is peeled off as follows.
{Circle around (1)} As shown in FIG. 2A, a notch 180 is made in the outer semiconductive layer 18 at a predetermined position A at the end of the CV cable 10 using a dedicated tool 20.
Further, a spiral cut 182 is made in the outer semiconductive layer 18 forward from the predetermined position A.
[0004]
Note that the predetermined position A is a position where the front external semiconductive layer 18 is to be peeled off from that position, in other words, the end of the external semiconductive layer 18 remaining on the cable after the external semiconductive layer 18 is peeled off. Say the position.
[0005]
{Circle around (2)} The outer semiconductive layer 18 where the cuts 180 and 182 are made is removed to expose the cable insulator 16 as shown in FIG.
[0006]
2) Alternatively, as shown in FIG. 2C, a cut 184 parallel to the bus bar of the CV cable 10 is made, and the external semiconductive layer 18 is peeled off to make it as shown in FIG. is there.
[0007]
Here, when applying a free stripping type external semiconducting layer to CV cables of 66-77kV class or higher, considering the influence on the electrical performance of the connection part, the following end treatment of the external semiconducting layer Etc. are considered necessary.
(3) As shown in FIG. 3 (a), the end portion of the external semiconductive layer 18 is subjected to a penciling process using a glass cutting tool 22 or the like.
(4) Then, the hatched portion shown in FIG.
(5) After finishing, a semiconductive paint 24 is applied as shown in FIG.
{Circle around (6)} Finally, as shown in FIG. 6D, the ACP tape (for CH) or C tape (for JB) 26, which is a semiconductive tape, is wound.
[0008]
[Problems to be solved by the invention]
When the above-described notch 180 or the like is inserted with the tool 20, the blade 200 of the tool 20 is not inserted until it reaches the cable insulator 16 as shown in FIG. This is because the cable insulator 16 may be damaged. Therefore, a cut residue 186 is formed under the cut 180 or the like.
As a result, when the outer semiconductive layer 18 is peeled off, the portion of the cutout 186 is finally torn off.
[0009]
Therefore, in this portion, as shown in FIG. 4B, the terminal of the external semiconductive layer 18 is surely peeled off although it is slight (although it is exaggerated in the figure).
Moreover, even when performing the penciling process, there is a possibility that the peeled portion cannot be completely removed due to oversight.
Further, depending on the manner of glass shaving and sandpaper shaving, the peeling is rather increased (see FIG. 4C).
[0010]
As described above, in the case of a free stripping type external semiconductive layer, peeling occurs at the end of the external semiconductive layer. Therefore, when considering the application of the free stripping type external semiconductive layer to CV cables of 66 to 77 kV class or higher There is also a concern that the electrical performance of the connection part is greatly affected.
[0011]
[Means for Solving the Problems]
As illustrated in FIG.
{Circle around (1)} As for the portion indicated by oblique lines in FIG. 8 (b), the external semiconductive layer 18 between the predetermined position A and a suitable position C slightly behind it is subjected to a pencilling process as shown in FIG. At the same time, the front outer semiconductive layer 18 from the predetermined position A is scraped over a certain length,
{Circle around (2)} Then, as shown in FIG. 4D, the previous outer semiconductive layer 18 is peeled off from the shaved portion.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
(1) Actually, as shown in FIG. 1 (a), first, from a position B slightly ahead of the predetermined position A by a distance e (for example, about 5 to 10 mm) from the front end of the external semiconductive layer 18, A spiral notch 182 is made with the tool 20.
[0013]
(2) Next, with respect to the portion indicated by hatching in FIG. 6 (b), a predetermined distance from the rear position C by a slight distance f (for example, about 10 to 20 mm) from the predetermined position A as shown in FIG. A glass cutting tool 22 is used to perform a penciling process toward A,
At the same time, the outer semiconductive layer 18 between the predetermined position A and a distance D (for example, about 50 mm) to the front D is shaved.
At that time, as shown in FIG. 3C, the outer semiconductive layer 18 is completely scraped between the predetermined positions A and B to expose the cable insulator 16.
The outer semiconductive layer 18 between the BDs may be tapered.
[0014]
(3) Next, as shown in FIG. 3C, the external semiconductive layer 18 is peeled off from the end of the CV cable 10 to the rear, and as shown in FIG.
[0015]
(4) After that, like the conventional case, the portion corresponding to the shaded portion in FIG.
(5) Apply semiconductive paint on the finished surface (see Fig. 3 (c)),
(6) Finally, wrap the ACP tape (for CH) or C tape (for JB) (see FIG. 3D).
[0016]
【The invention's effect】
(1) In the peeling operation of the external semiconductive layer, there is no action of finally tearing off the terminal, so that the terminal of the external semiconductive layer does not peel off.
(2) Since the terminal does not peel off, there is no possibility of an electrical defect from the beginning, and external semiconductive layer free stripping to a 66 to 77 kV class or higher CV cable becomes possible.
(3) The external semiconductive layer can be penciled simultaneously, and even if the final sandpaper is removed, the external semiconductive layer terminal does not peel off.
Therefore, assembly can be performed without deteriorating the electrical properties of the junction box.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of an embodiment of the present invention.
FIG. 2 is an explanatory view of a construction method until peeling of an external semiconductive layer 18 in a conventional method for treating an end portion of an external semiconductive layer.
FIG. 3 is an explanatory diagram of a process after peeling of the external semiconductive layer 18 in a conventional method for treating the edge of the external semiconductive layer.
FIG. 4 is an explanatory diagram of a problem to be solved by the present invention.
[Explanation of symbols]
10 CV cable 12 Cable conductor 14 Inner semiconductive layer 16 Cable insulator 18 Outer semiconductive layer 180, 182, 184 Notch 186 Not remaining 20, 22 Tool 200 Blade 24 Semiconductive paint 26 Tape A Predetermined position

Claims (1)

フリーストリッピング型外部半導電層を有するCVケーブルの、端部における所定位置から前方の外部半導電層をはぎ取る工程と、前記所定位置から後方に残った外部半導電層の端部をペンシリング処理する工程、を有するCVケーブルの外部半導電層端部の処理方法において、
前記所定位置から若干前方の位置から前記外部半導電層の前端にかけて、らせん状の切り込みを入れる工程と、
前記所定位置とそれより若干後方の適当位置との間の外部半導電層にペンシリング処理を施すと同時に前記所定位置から前方の外部半導電層を前記所定位置から若干前方の位置にわたって完全に削り取る工程と、
前記削り取った部分から先の外部半導電層をはぎ取る工程、を有することを特徴とする、CVケーブルの外部半導電層端部の処理方法。
The step of stripping the front external semiconductive layer from a predetermined position at the end of the CV cable having the free stripping type external semiconductive layer, and the end of the external semiconductive layer remaining behind from the predetermined position are penciled. In a method of processing an outer semiconductive layer end of a CV cable having a step,
From the position slightly ahead of the predetermined position to the front end of the outer semiconductive layer, a step of making a spiral cut,
The external semiconductive layer between the predetermined position and an appropriate position slightly behind it is subjected to a penciling process, and at the same time , the external semiconductive layer in front of the predetermined position is completely moved from the predetermined position to a slightly forward position. Scraping process,
And a step of stripping off the external semiconductive layer from the scraped portion. The method for treating the end of the external semiconductive layer of the CV cable.
JP26802397A 1997-09-12 1997-09-12 Method for treating end of outer semiconductive layer of CV cable Expired - Fee Related JP3771015B2 (en)

Priority Applications (1)

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JP26802397A JP3771015B2 (en) 1997-09-12 1997-09-12 Method for treating end of outer semiconductive layer of CV cable

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Application Number Priority Date Filing Date Title
JP26802397A JP3771015B2 (en) 1997-09-12 1997-09-12 Method for treating end of outer semiconductive layer of CV cable

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JPH1198672A JPH1198672A (en) 1999-04-09
JP3771015B2 true JP3771015B2 (en) 2006-04-26

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* Cited by examiner, † Cited by third party
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JP2008178264A (en) * 2007-01-22 2008-07-31 Viscas Corp End treatment method and tool for outer semiconductive layer of CV cable
FR3131470B1 (en) * 2021-12-23 2026-03-27 Nexans Composite termination of high or very high voltage electrical transmission cable and method for preparing a cable termination

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