JP3779905B2 - Vacuum deposition system - Google Patents
Vacuum deposition system Download PDFInfo
- Publication number
- JP3779905B2 JP3779905B2 JP2001317810A JP2001317810A JP3779905B2 JP 3779905 B2 JP3779905 B2 JP 3779905B2 JP 2001317810 A JP2001317810 A JP 2001317810A JP 2001317810 A JP2001317810 A JP 2001317810A JP 3779905 B2 JP3779905 B2 JP 3779905B2
- Authority
- JP
- Japan
- Prior art keywords
- bottom plate
- semiconductor substrate
- rising portion
- dish
- vent hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001771 vacuum deposition Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000000630 rising effect Effects 0.000 claims description 14
- 238000009423 ventilation Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【０００１】
【発明が属する技術分野】
本発明は、ＩＣ製造の前工程である、ウエハーにガスを供給して成膜形成工程に用いる真空成膜装置に関するもので、反応種のすみやかな排気と膜厚が均一となるようにしたものである。
【０００２】
【従来の技術】
半導体製造プロセスでは、ＣＶＤ（Chemical Vapor Deposition）やイオン注入あるいはエッチングなどの種々の真空処理が行なわれることにより半導体デバイスが形成されている。このような真空処理を行なうにあたって、真空成膜装置を用いている。この装置において、真空槽内の半導体基板は、半導体基板保持部の下面に装着された皿状体によって支持され、真空槽の下方には半導体基板に流すガスのガス供給部が、また、側面には真空槽内部を真空排気するための排気ポ−トが設けられ、排気ポ−トは真空ポンプ（図示せず）に通じている。
【０００３】
【発明が解決しようとする課題】
しかし、上記の従来装置は、ガス供給部から導入されたガスは、例えば、プラズマＣＶＤ（Plasma Chemical Vapor Deposition）装置のプラズマ放電により半導体基板に成膜するものであるが、ガスの流れにムラが生ずるために半導体基板に均一に流れず、そのために、半導体基板に均一な膜厚を作り難く、また、排気もスム−ズに行なえないという不具合があった。
【課題を解決するための手段】
【０００４】
そこで、本発明は、上記不具合を解決するために下記の手段を講じた。
即ち、側面に排気ポートを有し、内部に半導体基板保持部を上下移動可能に設け、該半導体基板保持部の下部には、円盤状の底板と該底板の周上に設けた立上がり部とからなる通気孔が形成された皿状体を設け、該皿状体の下方に半導体基板を装着可能とされている真空槽であって、上記皿状体は、第１底板と、該第１底板の円周上に設けられた第１立上がり部と、該第１立上がり部に連結された第２底板と、更に、該第２底板の円周上に設けられ真空槽の内壁とのギャップにより形成される排気コンダクタンスが上記通気孔に比べ十分小さく設計されている第２立上がり部と、からなり、上記通気孔は、上記第１底板の半導体基板装着部分近傍で半導体基板保持部を中心として同芯状でスリット状に形成された第１通気孔と、上記第１立上がり部を所定間隔を以って形成された柱状体とし該柱状体間で形成される第２通気孔と、からなることを特徴とする。
【０００５】
【発明の実施の形態】
以下、本発明の実施例を図１に基づいて説明する。真空成膜装置の真空槽８０は、その側面に排気ポート２が設けられ、更に、内部に半導体基板４を保持する基板保持部３が上下移動可能に設けられている。基板保持部３の下部には、本発明の皿状体８１が装着されている。図１において、皿状体８１は、第１底板８２と、該第１底板８２の円周上に設けられた第１立上がり部８３と、該第１立上がり部８３に連結された第２底板８４と、該第２底板８４の円周上に設けられた第２立上がり部８５と、からなる。そして、第１通気孔８６と第２通気孔８７とを形成するに当り、半導体基板装着部分近傍で半導体基板保持部３の中心に対して点対称の位置に形成したことを特徴とする。更に具体的には、第１立上がり部８３を柱状体とし、該柱状体間を第２通気孔８７とした。また、第１底板８２には、半導体基板装着部分近傍で半導体基板保持部３の中心に同芯状に第１通気孔８６がスリット状に形成される。
【０００６】
このような構成おいて、ガス供給部７からのガスは、主に第１通気孔８６、第２通気孔８7 を介して排出されるようにして半導体基板保持部３に供給されるので、均一に流れ、半導体基板４には均一な膜が形成される。
【０００７】
実施例では、ガス供給部７は、プラズマＣＶＤ（Plasma Chemical Vapor Deposition）装置のガス供給部としたが、熱ＣＶＤ装置及びＭＢＥ装置における成膜用のガス供給部としてもよい。更に、ガス供給部７は、前記プラズマＣＶＤの一方の電極として、或いはスパッタ装置においては、マグネトロンスパッタソ−スとしてもよい。なお、上記実施例において、半導体基板４を保持する基板保持部３が上下移動可能に設けられている例を示したが、基板保持部３が固定式のものであってもよい。また、上記特許請求の範囲の項では、実施例との対応関係を明瞭にするために図面符号を付したが、本発明はこれに限定されるものではない。
【０００８】
【発明の効果】
以上実施例から明らかなように、本発明により、ガス供給部からのガスは、半導基板の全体を包みこむように流れ、半導体基板に均一に成膜を形成され、ガスのすみやかな排気ができる。
【図面の簡単な説明】
【図１】本発明の実施例の真空槽８０の縦断面図（Ａ）及び図１（Ａ）ののＢ−Ｂ線矢視図（Ｂ）。
【符号の説明】
２・・・排気ポート ３・・・半導体基板保持部 ４・・・半導体基板
７・・・ガス供給部 ８０・・真空槽
８１・・皿状体 ８２・・第１底板 ８３・・第１立上がり部 ８４・・第２底板
８５・・第２立上がり部 ８６・・第１通気孔 ８７・・第２通気孔[0001]
[Technical field to which the invention belongs]
The present invention relates to a vacuum film forming apparatus used for a film forming process by supplying a gas to a wafer, which is a pre-process of IC manufacturing, and is designed to make the reactive species swiftly exhausted and the film thickness uniform. It is.
[0002]
[Prior art]
In the semiconductor manufacturing process, semiconductor devices are formed by performing various vacuum processes such as CVD (Chemical Vapor Deposition), ion implantation or etching. In performing such vacuum processing, a vacuum film forming apparatus is used. In this apparatus, the semiconductor substrate in the vacuum chamber is supported by a dish-like body mounted on the lower surface of the semiconductor substrate holding portion, and a gas supply portion for flowing gas to the semiconductor substrate is provided below the vacuum chamber, and also on the side surface. Is provided with an exhaust port for evacuating the inside of the vacuum chamber, and the exhaust port communicates with a vacuum pump (not shown).
[0003]
[Problems to be solved by the invention]
However, in the above-described conventional apparatus, the gas introduced from the gas supply unit is formed on a semiconductor substrate by plasma discharge of, for example, a plasma CVD (plasma chemical vapor deposition) apparatus. Therefore, there is a problem that the semiconductor substrate does not flow uniformly, and therefore, it is difficult to form a uniform film thickness on the semiconductor substrate, and the exhaust cannot be performed smoothly.
[Means for Solving the Problems]
[0004]
Therefore, the present invention has taken the following measures in order to solve the above-mentioned problems.
That is, an exhaust port on a side surface, inside provided a semiconductor substrate holder vertically movably, on the lower portion of the semiconductor substrate holding portion, and a rising portion provided on the circumference of a disc-shaped bottom plate and the bottom plate the dish-shaped body vent hole is formed consisting provided a vacuum chamber, which is a semiconductor substrate can be mounted beneath the dish-shaped body, the dish-shaped body, a first bottom plate, said A first rising portion provided on the circumference of the first bottom plate , a second bottom plate connected to the first rising portion , and an inner wall of the vacuum chamber provided on the circumference of the second bottom plate And a second rising portion that is designed to be sufficiently smaller in exhaust conductance than the vent hole, and the vent hole holds the semiconductor substrate in the vicinity of the semiconductor substrate mounting portion of the first bottom plate. a first vent hole formed in a slit shape in coaxially around the part, the first rise-up A second vent hole which Ri portion formed between predetermined intervals and columnar body formed drives out columnar body, characterized in that it consists of.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
Below it is described with reference to embodiments of the present invention in FIG. The
[000 6 ]
In such a configuration, the gas from the gas supply unit 7 is supplied to the semiconductor substrate holding unit 3 so as to be discharged mainly through the
[000 7 ]
In the real施例, gas supply unit 7 has been plasma CVD (Plasma Chemical Vapor Deposition) gas supply unit of the apparatus may be a gas supply unit for film formation in a thermal CVD apparatus and MBE apparatus. Further, the gas supply unit 7 may be one electrode of the plasma CVD, or may be a magnetron sputtering source in the sputtering apparatus. Incidentally, Oite the above embodiment, the substrate holder 3 for holding a
[000 8 ]
【The invention's effect】
As is clear from the above embodiments, according to the present invention, the gas from the gas supply portion flows so as to wrap around the entire semiconductor substrate, and the film is uniformly formed on the semiconductor substrate, so that the gas can be exhausted quickly. .
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view (A) of a
[Explanation of symbols]
2 ... Exhaust port 3 ... Semiconductor
Claims (1)
上記皿状体は、第１底板と、該第１底板の円周上に設けられた第１立上がり部と、該第１立上がり部に連結された第２底板と、更に、該第２底板の円周上に設けられ真空槽の内壁とのギャップにより形成される排気コンダクタンスが上記通気孔に比べ十分小さく設計されている第２立上がり部と、からなり、
上記通気孔は、上記第１底板の半導体基板装着部分近傍で半導体基板保持部を中心として同芯状でスリット状に形成された第１通気孔と、上記第１立上がり部を所定間隔を以って形成された柱状体とし該柱状体間で形成される第２通気孔と、からなることを特徴とする真空成膜装置。An exhaust port on a side surface, inside provided a semiconductor substrate holder vertically movably, on the lower portion of the semiconductor substrate holding portion, and a rising portion provided on the circumference of a disc-shaped bottom plate and the bottom plate the dish-shaped body vent hole is formed is provided, a vacuum chamber, which is a semiconductor board mountable beneath the dish-shaped body,
The dish-shaped body, a first bottom plate, a first rising portion provided on the circumference of the first bottom plate, a second bottom plate which is connected to the first rising portion, further, said And a second rising portion provided on the circumference of the bottom plate and formed by a gap with the inner wall of the vacuum chamber and designed to be sufficiently smaller than the vent hole,
Said vent than a first vent hole formed in a slit shape in coaxially around the semiconductor substrate holding portion in the semiconductor substrate mounting portion near the first bottom plate, a predetermined distance said first rising portion A vacuum film-forming apparatus comprising: a columnar body formed as described above; and a second ventilation hole formed between the columnar bodies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001317810A JP3779905B2 (en) | 2001-10-16 | 2001-10-16 | Vacuum deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001317810A JP3779905B2 (en) | 2001-10-16 | 2001-10-16 | Vacuum deposition system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003124130A JP2003124130A (en) | 2003-04-25 |
| JP3779905B2 true JP3779905B2 (en) | 2006-05-31 |
Family
ID=19135621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001317810A Expired - Fee Related JP3779905B2 (en) | 2001-10-16 | 2001-10-16 | Vacuum deposition system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3779905B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04311572A (en) * | 1991-04-10 | 1992-11-04 | Tokyo Electron Ltd | Film forming device |
| JPH04350170A (en) * | 1991-05-27 | 1992-12-04 | Tel Varian Ltd | Film forming device |
| JPH08107072A (en) * | 1994-10-04 | 1996-04-23 | Mitsubishi Electric Corp | Thin film forming apparatus and thin film forming method |
| JP2927211B2 (en) * | 1995-06-21 | 1999-07-28 | 国際電気株式会社 | Wafer processing equipment |
-
2001
- 2001-10-16 JP JP2001317810A patent/JP3779905B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003124130A (en) | 2003-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI390075B (en) | Touch chemical chemical vaporization device | |
| CN100524641C (en) | Plasma processing device | |
| US20080283086A1 (en) | Substrate processing apparatus and cleaning method therefor | |
| KR100234661B1 (en) | Anisotropic etching equipment | |
| JP2003519932A (en) | Vacuum processing equipment | |
| TWI744673B (en) | Loadlock integrated bevel etcher system | |
| CN101527258B (en) | Cover part, process gas diffusing and supplying unit, and substrate processing apparatus | |
| JP4417574B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP4114972B2 (en) | Substrate processing equipment | |
| TW201734256A (en) | Showerhead | |
| CN111424260A (en) | Chemical vapor deposition equipment with efficient cleaning capability and semiconductor process method | |
| US20210388495A1 (en) | Asymmetric exhaust pumping plate design for a semiconductor processing chamber | |
| JP2022075394A (en) | Substrate processing method and substrate processing apparatus | |
| WO2025193439A1 (en) | Advanced thermal management system (atm) for pedestal temperature control in high power pecvd chamber | |
| KR20230002808A (en) | Pre-cleaning chamber upper shield with shower head | |
| CN116568861B (en) | Treatment of chamber deposition limitations | |
| JP3779905B2 (en) | Vacuum deposition system | |
| JP2020510307A (en) | Diffuser design for fluidity CVD | |
| CN101952938B (en) | Apparatus and method for processing substrate | |
| US20230120710A1 (en) | Downstream residue management hardware | |
| JP7358576B1 (en) | Film deposition equipment and method for manufacturing film-coated wafers | |
| JP7286847B1 (en) | Film forming apparatus and film-coated wafer manufacturing method | |
| JP7286848B1 (en) | Film forming apparatus and film-coated wafer manufacturing method | |
| KR20030027505A (en) | Semiconductor processing apparatus having improved exhausting structure | |
| TWI857327B (en) | Reactor with inductively coupled plasma source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041015 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050727 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050802 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051003 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051024 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051226 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060124 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060206 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060227 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060303 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120310 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |