JP3806686B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for applying, for example, a resist to a glass substrate used for a liquid crystal display (LCD) or the like in a liquid crystal manufacturing process.
[0002]
[Prior art]
In the LCD manufacturing process, a photolithography technique similar to that used for manufacturing semiconductor devices is used to form an ITO (Indium Tin Oxide) thin film or electrode pattern on a glass substrate for LCD. In the photolithography technique, a photoresist is applied to a glass substrate, which is exposed and further developed.
[0003]
As a method of applying the resist, in addition to spin coating in which the resist solution on the substrate is extended over the entire surface of the substrate by rotating the substrate, so-called scanning in which the nozzle is scanned on the substrate while discharging the resist solution from the nozzle. There exists application | coating (for example, refer patent document 1).
[0004]
In such scan coating, for example, there are nozzles provided with a plurality of holes for discharging a resist, so that the coating lines of the respective resist solutions discharged from the plurality of holes do not mix with each other. May occur.
[0005]
In order to solve such problems, for example, an ultrasonic vibrator is built in a chuck mechanism that holds a substrate, and ultrasonic waves are generated by the ultrasonic vibrator after applying a resist, and the substrate is microvibrated through the chuck mechanism. There is a device to let you. As a result, a plurality of coating lines are uniformly mixed (see, for example, Patent Document 2).
[0006]
[Patent Document 1]
JP 2001-162207 A (FIG. 4 etc.)
[Patent Document 2]
JP 2000-77326 A (reference numeral 73 in FIG. 1).
[0007]
[Problems to be solved by the invention]
However, even if the substrate is vibrated minutely by the ultrasonic vibrator as described above, it is still difficult to prevent the occurrence of streak irregularities. In particular, the non-uniform resist film thickness caused by streak unevenness greatly affects the development process and etching process, which are steps after the resist coating process.
[0008]
In addition, even when the interval between a plurality of holes is made as small as possible in order to prevent streak unevenness, if the discharge flow rate is large, the coating lines overlap each other and the coating film in that part becomes thick. Also occurs.
[0009]
In view of the circumstances as described above, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of flattening even when uneven stripes or the like occur and uniforming a coating film thickness of a processing liquid such as a resist. Is to provide.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, a substrate processing apparatus according to the present invention is disposed on a surface side of a substrate on which a first processing liquid is applied, a coating unit that coats the surface of the substrate with a first processing liquid, An ultrasonic irradiator for irradiating the first treatment liquid with ultrasonic waves; Gas supply means for supplying a predetermined gas to a gap between the ultrasonic irradiation body and the surface of the first treatment liquid applied to the surface of the substrate; It comprises.
[0011]
In the present invention, the first treatment liquid on the surface of the substrate is irradiated with ultrasonic waves by the ultrasonic irradiation body arranged on the surface side of the substrate. As a result, heat is generated in the first processing liquid, and the first processing liquid can be softened and flowability can be increased by this heat. Therefore, even when streak unevenness occurs after application, the streak unevenness is made uniform. be able to. As a result, the film thickness of the first treatment liquid is also made uniform.
[0012]
In the present invention, it is conceivable to irradiate the ultrasonic wave by immersing the ultrasonic irradiation body in the first treatment liquid. In this case, a physical impact force due to ultrasonic vibration can be applied, which contributes to even more uniform coating film thickness. Alternatively, ultrasonic waves may be irradiated from a position 1 mm to 5 mm away from the surface of the first treatment liquid applied to the surface of the substrate. In this case, it becomes uniform only by the softening action by heat. Here, examples of the first processing liquid include a resist liquid.
[0013]
In one form of this invention, it further has a means to move the said ultrasonic irradiation body relatively with respect to a board | substrate on the surface of the said board | substrate. Thereby, the film thickness can be made uniform over the entire surface of the first treatment liquid applied to the entire surface of the substrate.
[0019]
The present invention is arranged on the surface side of the substrate on which the first treatment liquid is applied and the application means for applying the first treatment liquid to the surface of the substrate, and irradiates the first treatment liquid with ultrasonic waves. An ultrasonic irradiator, Gas supply means for supplying a predetermined gas into a gap between the ultrasonic irradiation body and the surface of the first treatment liquid applied to the surface of the substrate It comprises. When the ultrasonic irradiation body is separated from the surface of the processing liquid on the substrate and is irradiated with ultrasonic waves, by supplying a predetermined gas to the gap, the first ultrasonic vibration is generated compared to the case where there is air in the gap. It becomes easy to transmit to the processing liquid, and the processing efficiency can be improved. In this case, a gas having a high molecular motion speed (a gas having a small mass) can be used as the predetermined gas. An example is helium gas.
[0020]
The present invention is arranged on the surface side of the substrate on which the first treatment liquid is applied and the application means for applying the first treatment liquid to the surface of the substrate, and irradiates the first treatment liquid with ultrasonic waves. An ultrasonic irradiator, Supply means for supplying a second processing liquid onto the surface of the first processing liquid applied to the surface of the substrate And The ultrasonic irradiator irradiates the first processing liquid with ultrasonic waves through the second processing liquid supplied by the supply unit. In this way, by irradiating the first processing liquid with the ultrasonic wave through the second processing liquid, the first ultrasonic vibration is generated compared with the case where there is air between the irradiation body and the first processing liquid. It becomes easy to transmit to the processing liquid, and the processing efficiency can be improved. In this case, the ultrasonic irradiation body may be irradiated with ultrasonic waves while being in contact with the second treatment liquid. The second treatment liquid can be pure water, for example.
[0021]
The present invention is arranged on the surface side of the substrate on which the first treatment liquid is applied and the application means for applying the first treatment liquid to the surface of the substrate, and irradiates the first treatment liquid with ultrasonic waves. An ultrasonic irradiator, A processing chamber that can be sealed, and a control means for controlling the pressure in the processing chamber And The ultrasonic irradiator is provided in the processing chamber, and the control means has means for controlling the pressure in the processing chamber to be higher than atmospheric pressure at least while irradiating the ultrasonic wave with the ultrasonic irradiator. By making the pressure higher than the atmospheric pressure while irradiating ultrasonic waves in this way, the molecules in the air become denser than in the case where the processing chamber is at atmospheric pressure, so that ultrasonic vibrations can be easily transmitted to the first processing liquid. Efficiency can be improved.
[0023]
The substrate processing method according to the present invention includes (a) a step of applying a first processing liquid to the surface of a substrate, and (b) the first processing from the surface side of the substrate to which the first processing liquid is applied. Irradiating the liquid with ultrasonic waves; (C) The step (b) includes a step of supplying a predetermined gas between the ultrasonic irradiation body that irradiates the ultrasonic wave and the surface of the first treatment liquid applied to the surface of the substrate. It has.
[0024]
In the present invention, heat is generated in the first processing liquid by the step (b), and this heat can soften the first processing liquid and improve the fluidity. The unevenness of the lines can be made uniform. As a result, the film thickness of the first treatment liquid is also made uniform.
[0026]
In one embodiment of the present invention, the step (c) includes a step of supplying helium gas between the ultrasonic irradiation body and the surface of the applied first treatment liquid.
[0027]
In one embodiment of the present invention, (d) after the step (a) and before the step (b), the second treatment liquid is applied to the surface of the first treatment liquid applied to the surface of the substrate. The step (b) further includes the step of irradiating the first processing liquid with the second processing liquid supplied in the step (d) as a medium.
[0028]
The substrate processing method according to the present invention includes (a) a step of applying a first processing liquid to the surface of a substrate, and (b) the first processing from the surface side of the substrate to which the first processing liquid is applied. Irradiating the liquid with ultrasonic waves, The step (b) is performed in a process chamber that can be sealed, and includes a step of controlling the pressure in the process chamber to be higher than the atmospheric pressure.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0030]
FIG. 1 is a plan view showing an LCD substrate coating and developing system to which the present invention is applied, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.
[0031]
The coating and developing processing system 1 includes a cassette station 2 on which a cassette C that stores a plurality of glass substrates G is placed, and a plurality of processing units for performing a series of processes including resist coating and development on the substrates G. An interface unit 4 for transferring the substrate G between the processing unit 3 and the exposure apparatus 32 is provided, and a cassette station 2 and an interface unit 4 are disposed at both ends of the processing unit 3, respectively.
[0032]
The cassette station 2 includes a transport mechanism 10 for transporting the LCD substrate between the cassette C and the processing unit 3. Then, loading and unloading of the cassette C is performed at the cassette station 2. In addition, the transport mechanism 10 includes a transport arm 11 that can move on a transport path 12 provided along the cassette arrangement direction, and the transport arm 11 can transport the substrate G between the cassette C and the processing unit 3. Done.
[0033]
The processing section 3 includes a main transport section 3a extending in the direction (X direction) perpendicular to the arrangement direction (Y direction) of the cassette C in the cassette station 2, and a resist coating processing unit along the main transport section 3a. An upstream portion 3b in which processing units including (CT) are arranged in parallel and a downstream portion 3c in which processing units including development processing unit (DEV) 18 are arranged in parallel are provided.
[0034]
The main transport unit 3 a is provided with a transport path 31 extending in the X direction and a transport shuttle 23 configured to be movable along the transport path 31 and transporting the glass substrate G in the X direction. The transport shuttle 23 is configured to transport the substrate G while holding the substrate G with, for example, support pins. Further, a vertical transfer unit 7 that transfers the substrate G between the processing unit 3 and the interface unit 4 is provided at the end of the main transfer unit 3a on the interface unit 4 side.
[0035]
In the upstream part 3b, a scrubber cleaning unit (SCR) 20 for cleaning the substrate G is provided at the end of the cassette station 2 side, and an organic substance on the substrate G is disposed above the scrubber cleaning unit (SCR) 20. An excimer UV processing unit (e-UV) 19 is provided for removing water.
[0036]
Next to the scrubber cleaning processing unit (SCR) 20, thermal processing blocks 24 and 25 are arranged in which units for performing thermal processing on the glass substrate G are stacked in multiple stages. Between these heat treatment blocks 24 and 25, the vertical transfer unit 5 is arranged, and the transfer arm 5a is movable in the Z direction and the horizontal direction and is rotatable in the θ direction. The substrate G is transferred by accessing each heat treatment system unit in the blocks 24 and 25. The vertical transport unit 7 in the processing unit 3 has the same configuration as the vertical transport unit 5.
[0037]
As shown in FIG. 2, the heat treatment system block 24 includes a baking unit (BAKE) for performing heat treatment before applying a resist to the substrate G, and an adhesion unit (AD) for performing hydrophobization treatment with HMDS gas. They are stacked in order from the bottom. On the other hand, in the heat treatment block 25, two stages of cooling units (COL) for cooling the substrate G and an adhesion unit (AD) are stacked in order from the bottom.
[0038]
A resist processing block 15 extends in the X direction adjacent to the heat treatment block 25. The resist processing block 15 includes a resist coating processing unit (CT) for applying a resist to the substrate G, a reduced pressure drying unit (VD) for drying the applied resist under reduced pressure, and a peripheral portion of the substrate G according to the present invention. And an edge remover (ER) for removing the resist. The resist processing block 15 is provided with a sub arm (not shown) that moves from the resist coating processing unit (CT) to the edge remover (ER) so that the substrate G is transported in the resist processing block 15 by the sub arm. It has become.
[0039]
A multi-stage heat treatment system block 26 is disposed adjacent to the resist processing block 15, and the pre-baking unit (PREBAKE) for performing a heat treatment after applying the resist to the substrate G is arranged in this heat treatment system block 26. Are stacked.
[0040]
In the downstream portion 3c, as shown in FIG. 3, a heat treatment system block 29 is provided at the end on the interface portion 4 side, which includes a cooling unit (COL), a heat treatment before the development process after the exposure. Post-exposure baking units (PEBAKE) that perform the above are stacked in order from the bottom.
[0041]
A development processing unit (DEV) 18 that performs development processing adjacent to the heat treatment block 29 extends in the X direction. Next to the development processing unit (DEV) 18, heat treatment system blocks 28 and 27 are arranged. Between these heat treatment system blocks 28 and 27, the same structure as the vertical transport unit 5 is provided. A vertical transfer unit 6 that can access the heat treatment units 28 and 27 is provided. An i-line processing unit (i-UV) 33 is provided on the end of the development processing unit (DEV) 18.
[0042]
In the heat treatment block 28, a cooling unit (COL) and a post baking unit (POBAKE) for performing heat treatment after development on the substrate G are stacked in order from the bottom. On the other hand, in the heat treatment block 27, similarly, a cooling unit (COL) and a post baking unit (POBAKE) are stacked in order from the bottom.
[0043]
The interface unit 4 is provided with a titler and peripheral exposure unit (Title / EE) 22 on the front side, an extension cooling unit (EXTCOL) 35 adjacent to the vertical transfer unit 7, and a buffer cassette 34 on the back side. There is a vertical transfer unit 8 that transfers the substrate G between the titler / peripheral exposure unit (Title / EE) 22, the extension cooling unit (EXTCOL) 35, the buffer cassette 34, and the adjacent exposure device 32. Has been placed. The vertical transport unit 8 has the same configuration as the vertical transport unit 5.
[0044]
Regarding the processing steps of the coating and developing processing system 1 configured as described above, first, the substrate G in the cassette C is transported to the upstream portion 3b in the processing portion 3 portion. In the upstream portion 3b, surface modification / organic matter removal processing is performed in the excimer UV processing unit (e-UV) 19, and then cleaning processing is performed in the scrubber cleaning processing unit (SCR) 20 while the substrate G is transported substantially horizontally. And a drying process is performed. Subsequently, the substrate G is taken out by the transfer arm 5a in the vertical transfer unit at the lowermost stage of the heat treatment system block 24, heated in the baking unit (BAKE) of the heat treatment system block 24, and in the adhesion unit (AD). In order to improve the adhesion between the glass substrate G and the resist film, a process of spraying HMDS gas onto the substrate G is performed. Thereafter, a cooling process by a cooling unit (COL) of the heat treatment system block 25 is performed.
[0045]
Next, the substrate G is transferred from the transfer arm 5a to the transfer shuttle 23. After being transferred to the resist coating processing unit (CT) and subjected to the resist coating processing, the vacuum drying processing unit (VD) performs the vacuum drying processing and the edge remover. (ER) Then, the resist removal processing at the periphery of the substrate is sequentially performed.
[0046]
Next, the substrate G is transferred from the transfer shuttle 23 to the transfer arm of the vertical transfer unit 7, subjected to heat treatment in the pre-baking unit (PREBAKE) in the heat treatment block 26, and then cooled in the heat treatment block 29. The cooling process is performed at (COL). Subsequently, the substrate G is cooled by an extension cooling unit (EXTCOL) 35 and exposed by an exposure apparatus.
[0047]
Next, the substrate G is transferred to the post-exposure baking unit (PEBAKE) of the heat treatment system block 29 via the transfer arms of the vertical transfer units 8 and 7, where the heat treatment is performed and then the cooling unit (COL). The cooling process is performed. Then, the development process, the rinsing process and the drying process are performed while the substrate G is transported substantially horizontally in the development processing unit (DEV) 18 via the transport arm of the vertical transport unit 7.
[0048]
Next, the substrate G is transferred from the lowermost stage in the heat treatment system block 28 by the transfer arm 6a of the vertical transfer unit 6, and is subjected to heat treatment in the post baking unit (POBAKE) in the heat treatment system block 28 or 27, and the cooling unit. The cooling process is performed at (COL). The substrate G is transferred to the transport mechanism 10 and accommodated in the cassette C.
[0049]
Next, the resist coating unit (CT) will be described with reference to FIG.
[0050]
In the resist coating processing unit CT, a cup CP that accommodates the substrate G is disposed substantially at the center. Inside the cup CP, for example, a chuck member 38 for holding the substrate G by vacuuming or the like is provided, and the chuck member 38 can be moved up and down so as to protrude and retract from the cup CP by a driving mechanism such as an air cylinder (not shown). It has become. Accordingly, the substrate conveyed from the outside can be received by the chuck member 38, or the substrate that has been processed by the unit CT can be transferred to the outside.
[0051]
Although not shown, a lid member that moves up and down by an air cylinder or the like is disposed in the opening 59 of the cup.
[0052]
A drive device 30 for moving the resist nozzle 41 and the ultrasonic irradiation body 42 in the horizontal direction (X direction in the drawing) is provided at a position adjacent to the cup CP. The resist solution is supplied from the resist solution supply unit 16 to the resist nozzle 41 via the supply pipe 16a. The driving device 30 is provided with a ball screw 54 a that is rotated by a motor 54 and a ball screw 53 a that is rotated by a motor 53.
[0053]
A support body 44 that supports a nozzle holding member 46 that holds the registration nozzle 41 is screwed into the ball screw 54a at a lower portion thereof, and the support body 44 can move in the X direction by the rotation of the motor 54. Yes. The support body 44 incorporates a drive mechanism such as an air cylinder (not shown) for moving the nozzle holding member 46 in the vertical direction (Z direction) so that the registration nozzle 41 can be moved up and down. Similarly, in the ball screw 53a, a support body 43 that supports a holding member 45 that holds the ultrasonic irradiation body 42 is screwed at a lower portion thereof, and the support body 43 can be moved in the X direction by the rotation of the motor 53. ing. This support body 43 is also provided with a drive mechanism such as an air cylinder (not shown) in its interior so that the ultrasonic irradiation body 42 can be moved up and down. The movement amounts of the X and Z axes are individually controlled by the X axis controller 37 and the Z axis controller 36 provided in the control unit 17.
[0054]
With such a configuration, the resist nozzle 41 and the ultrasonic irradiation body 42 can move in the X-axis direction and the Z-axis direction, respectively, on the surface side of the substrate G accommodated in the cup CP.
[0055]
FIG. 5 is a cross-sectional view showing an example of the ultrasonic irradiation body 42. In the ultrasonic irradiator 42, for example, a plurality of piezoelectric elements 52 that generate ultrasonic waves are arranged in a straight line in a space inside the housing 55. A voltage is applied to the piezoelectric elements 52 by the piezoelectric element controller 50, and the plurality of piezoelectric elements 52 are driven at the same frequency in synchronization. The plurality of piezoelectric elements 52 are fixed to one diaphragm 56 so that the vibration of the piezoelectric elements 52 is transmitted to the diaphragm 56. With such a configuration, the vibration plate 56 generates vibrations over the entire length of the housing 55 and applies ultrasonic vibrations to the substrate G.
[0056]
FIG. 6 is a cross-sectional view showing another example of the ultrasonic irradiation body. In this ultrasonic irradiator 42 ′, a plurality of ultrasonic horns 57 are arranged in a straight line inside the housing 55. For example, as shown in the figure, the ultrasonic horn incorporates piezoelectric elements 52 that generate ultrasonic waves, and is formed so that the diameter decreases toward the lower side. Thereby, the vibration of the piezoelectric element 52 is converged. The piezoelectric elements 52 are individually applied with voltages at various voltage values and frequency values by the piezoelectric element controller 60. With such a configuration, individual vibration of each horn 57 is applied to the substrate G.
[0057]
FIG. 7 is a perspective view showing the resist nozzle 41 from below. The resist nozzle 41 discharges a resist solution from a plurality of discharge holes 41a provided in the lower part. Each of these discharge holes 41a has a fine diameter of, for example, 50 μm to 100 μm. In addition, as shown in FIG. 8, the length of the resist nozzle 41 in the longitudinal direction is the same as or longer than the width of one side Ga of the substrate G, for example.
[0058]
Next, the operation of the resist coating unit CT configured as described above will be described.
[0059]
First, the substrate carried into the resist coating unit CT is transferred to the chuck member 38 and accommodated in the cup CP. Then, as shown in FIG. 8, the resist nozzle 41 discharges the linear resist R while moving on the substrate G. In this way, a resist is applied to the entire surface of the substrate G by a single scan.
[0060]
Next, the applied resist is irradiated with ultrasonic waves while moving the ultrasonic irradiation body 42 on the substrate G in the same manner as the resist nozzle 41. In this case, the ultrasonic irradiation body 42 is irradiated with a distance of, for example, 1 mm to 5 mm, preferably 1 mm to 2 mm from the resist surface. As a result, heat is generated in the resist, and the heat can soften the resist and increase the fluidity. Therefore, even when streak unevenness due to the coating line occurs after application of the resist, the streak unevenness can be made uniform, and the resist film thickness can also be made uniform. In addition, since a physical impact force by ultrasonic vibration can be applied, it contributes to even more uniform coating film thickness.
[0061]
Alternatively, the ultrasonic irradiation may be performed by scanning while applying the ultrasonic irradiation body 42 to the applied resist. In this case, the film thickness is made uniform only by the softening action of the resist by heat.
[0062]
When ultrasonic waves are irradiated by the ultrasonic irradiation body 42 ′ shown in FIG. 6, it is possible to scan by changing the frequency and output voltage of the ultrasonic waves irradiated from the respective ultrasonic horns 57. For example, by increasing the output voltage from the other horns 57 and generating ultrasonic waves from the horns 57 corresponding to the positions of the substrate G that are particularly likely to irradiate the portions where the stripe unevenness is likely to occur, the film thickness can be further increased. It can be made uniform.
[0063]
Alternatively, the frequency and output voltage of the ultrasonic wave irradiated from each ultrasonic horn 57 can be dynamically changed during the scanning of the ultrasonic irradiation body 42 ′. Such dynamic control can also be performed by the ultrasonic irradiation body 42 shown in FIG.
[0064]
FIG. 9 is a perspective view showing another example of the resist coating unit. In FIG. 9, the same components as those in FIG. 4 are denoted by the same reference numerals, and the description thereof is omitted.
[0065]
In this resist coating unit, the ultrasonic irradiation body 42 (42 ′) is also fixed to the nozzle holding member 46 that holds the resist nozzle 41. With such a configuration, while applying the coating by scanning the resist nozzle 41 in the direction of arrow A, the ultrasonic irradiation body 42 (42 ′) irradiates ultrasonic waves so as to follow the resist nozzle 41. I can go. As a result, the driving device and the like can be simplified and the throughput can be improved.
[0066]
FIG. 10 is a cross-sectional view showing the main part of another example of the resist coating unit. In this example, for example, a helium gas nozzle 63 that ejects helium gas supplied from a helium gas supply unit 62 via a supply pipe 62a is provided. The helium gas nozzle 63 is supported by a support member 64, and the support member 64 is attached to a side portion of the holding member 61 that holds the ultrasonic irradiation body 42 (42 '). The lower part 63a of the helium gas nozzle 63 is supported by the support member 64 so as to face the ultrasonic irradiation body 42 (42 ') side.
[0067]
When the ultrasonic irradiation body 42 (42 ′) of the resist coating unit is scanned on the substrate G in the direction of arrow A to irradiate ultrasonic waves, the helium gas nozzle 63 ejects helium gas. In this case, gas is jetted into the gap between the resist R applied on the substrate and the ultrasonic irradiation body 42 (42 '). By doing in this way, compared with the case where there exists air in the crevice, ultrasonic vibration can be easily transmitted to resist R, and processing efficiency can be improved. This is because helium gas has a higher molecular motion speed than air composed of nitrogen, oxygen, or the like, that is, its mass is small, so that ultrasonic vibration is easily transmitted. Specifically, such an effect can be demonstrated from the sound intensity formula I = p × u (sound intensity: I, sound pressure: p, particle velocity: u). Here, the sound intensity is the unit area perpendicular to the sound propagation direction and the energy of the sound that passes in unit time (unit: J / (s · m ² ) = W / m ² ).
[0068]
FIG. 11 is a cross-sectional view showing an ultrasonic irradiation apparatus according to an embodiment.
[0069]
In the ultrasonic irradiation apparatus 80, a processing chamber for irradiating ultrasonic waves is provided in a casing 81. A mounting table 85 on which the substrate G is mounted is disposed at substantially the center of the processing chamber, and an ultrasonic irradiation body is disposed above the mounting table 85. 42 A moving mechanism 82 for moving the is extended. The ultrasonic irradiation body 42 (42 ′) is supported by a support member 88, and this support member 88 is moved in a horizontal plane by a moving mechanism 82. As the moving mechanism 82, for example, a driving device using a ball screw or a driving device using a belt can be used. In the lower part of the processing chamber, there is provided an introduction port 84 for introducing air supplied from the pressurizing device 86 through the pipe 87 into the processing chamber. The pressurizing device 86 includes a device (not shown) that controls the pressure in the processing chamber to a predetermined pressure. As the pressurizing device 86, for example, a device for sending out air by a pump or the like can be used. The housing 81 is formed with an opening 83 for taking in and out the substrate G. The opening 83 is provided with a gate valve 89 for sealing the processing chamber.
[0070]
In addition, this ultrasonic irradiation apparatus 80 can be arrange | positioned instead of the reduced pressure drying process unit VD etc. which were provided adjacent to the resist coating process unit CT in FIG. 1, for example. Or you may make it provide in any one of the heat processing blocks 24-29. In this case, the resist application processing unit CT is not provided with the ultrasonic irradiation body 42 (42 '), and only a means for applying the resist may be provided.
[0071]
Next, the operation of the ultrasonic irradiation apparatus 80 configured as described above will be described. First, the substrate G that has been subjected to the resist coating processing in the resist coating processing unit CT is carried into the processing chamber through the opening 83 and placed on the mounting table 85. When placed, the gate valve 89 is closed and the processing chamber is sealed. When sealed, air is supplied into the processing chamber, and the processing chamber is set to a pressure higher than the atmospheric pressure. The ultrasonic irradiator 42 (42 ') irradiates ultrasonic waves while moving on the substrate surface. Thereby, the resist is made uniform and the resist film thickness can be made uniform. As an irradiation method in this case, it is desirable to irradiate the irradiation body 42 (42 ') at a distance of 1 mm to 5 mm, preferably 1 mm to 2 mm from the surface of the resist film without bringing the irradiation body 42 (42') into contact with the resist.
[0072]
In such an ultrasonic irradiation apparatus 80, since ultrasonic waves are irradiated in a particularly pressurized atmosphere, the momentum of molecules in the air in the processing chamber increases, and the helium gas described with reference to FIG. 10 is supplied. Similarly to this, ultrasonic vibration can be easily transmitted to the resist, and the processing efficiency can be improved.
[0073]
Further, by performing the treatment under a high pressure with such an ultrasonic irradiation device 80, it is possible to suppress drying of the resist applied on the substrate. As a result, when irradiating the resist with ultrasonic waves, the energy for softening and uniformizing the resist can be minimized.
[0074]
FIG. 12 is a perspective view showing another example of an apparatus for applying a resist and irradiating ultrasonic waves. In FIG. 12, the same components as those in FIG. 4 are denoted by the same reference numerals, and the description thereof is omitted.
[0075]
In this example, for example, a roller type transport device used in a development processing unit (DEV) or a cleaning processing unit (SCR) in the coating and developing processing system 1 is used. A pair of two rollers 72 are fixed to the shaft 73, and the shaft and the two rollers 72 are configured to rotate integrally with the shaft 73 as a rotation axis. The plurality of rollers 72 are all driven to be synchronized by, for example, a single motor (not shown). As a result, the substrate G is transported in the direction indicated by the arrow 74.
[0076]
The plurality of rollers 72 are arranged in parallel to the ground at a horizontal portion indicated by reference numeral 66, for example, so that the substrate is conveyed in the horizontal direction. On the other hand, in the inclined portion denoted by reference numeral 67, for example, a plurality of rollers 72 are arranged in an uphill shape, and in this portion, the substrate G is conveyed obliquely upward with respect to the ground.
[0077]
As will be described later, this inclined portion is provided to make the substrate slant and allow pure water on the substrate to flow down. The rollers 72 are arranged in a downward slope (downwardly obliquely). May be.
[0078]
Alternatively, for example, when using a transport device in which all the rollers 72 are horizontally arranged and flowing pure water in the middle of transporting the substrate by the transport device, for example, the vicinity of the other end around the vicinity of one end of the substrate is used. The pure water can flow down by lifting the substrate from the lower surface side of the substrate with an unillustrated member and making the substrate oblique.
[0079]
The resist nozzle 41, the pure water nozzle 65, and the ultrasonic irradiation body 42 are sequentially arranged at a predetermined interval along the transport direction of the transport apparatus configured as described above. Pure water is supplied to the pure water nozzle 65 from a pure water supply unit 68 through a supply pipe 68a, and the supplied pure water is discharged onto the substrate G. The structure of the pure water sluice may be the same as the structure of the resist nozzle 41 as shown in FIG.
[0080]
In the apparatus configured as described above, first, a resist solution is discharged from the resist nozzle 41 to the substrate G that has been transported to a position immediately below the resist nozzle 41 to perform a coating process. When the coating process is completed, for example, the conveyance of the substrate is temporarily stopped and the resist is naturally dried. When the resist drying process is completed and the substrate G is transported to a position directly below the pure water nozzle 65, pure water is discharged from the pure water nozzle 65 to form a pure water film on the resist. When the substrate G on which the pure water film is formed is conveyed to a position directly below the ultrasonic irradiation body 42, the ultrasonic irradiation body 42 causes the substrate G to be irradiated with ultrasonic waves.
[0081]
FIG. 13 is a side view showing a state when the ultrasonic wave is irradiated. In this example, the ultrasonic irradiation body 42 is immersed in the pure water film 71 and irradiated with ultrasonic waves. By irradiating the resist film R with ultrasonic waves through the pure water in this way, it is easier to transmit ultrasonic vibrations to the resist than when there is air between the irradiation body 42 and the resist film R, and the processing efficiency is improved. Can be improved.
[0082]
In the present embodiment, it is more effective to use the ultrasonic irradiation body 42 shown in FIG. 5 (not the ultrasonic irradiation body 42 ′ shown in FIG. 6).
[0083]
When the irradiation of the ultrasonic waves is finished, the substrate G is transferred to the inclined portion 67, and the pure water on the substrate flows down due to gravity. As a result, the substrate can be dried.
[0084]
The present invention is not limited to the embodiments described above, and various modifications are possible.
[0085]
For example, the chuck member 38 may be provided with a temperature control mechanism. As the temperature control mechanism, for example, warm air can be supplied into the suction flow path of the chuck, or a heater such as a heating wire or infrared ray can be built in the chuck member.
[0086]
Further, in the embodiment shown in FIG. 6, the ultrasonic irradiator is configured by arranging a plurality of ultrasonic horns 57. However, one ultrasonic horn 57 itself is used as the ultrasonic irradiator to scan the substrate. It is also possible to irradiate with ultrasonic waves. In this case, as an example of the method of irradiating ultrasonic waves, the substrate surface after application of the resist is imaged with an imaging device such as a CCD to find not only uneven stripes but also fine coating unevenness, and uneven coating occurs. It is possible to concentrate and irradiate ultrasonic waves to the part.
[0087]
In FIG. 12, the resist is naturally dried after application of the resist. However, a vacuum drying apparatus may be separately provided to perform vacuum drying. In addition, the pure water on the substrate is caused to flow down by the inclined portion 67, but a separate heating device may be provided to dry the pure water on the substrate by heat treatment. Further, a processing apparatus in which at least two of these processes from the resist coating process to the pure water drying process are integrated may be provided.
[0088]
In the above embodiment, a piezoelectric element is used as an element for generating an ultrasonic wave. However, any element capable of generating an ultrasonic wave may be used.
[0089]
In the above embodiment, the resist nozzle is a long nozzle. For example, the nozzle is applied while scanning in the vertical and horizontal directions of the substrate, and is a normal nozzle having only one ejection hole. Also good.
[0090]
Furthermore, instead of the pure water film 71 described with reference to FIG. 13, alcohols having a small number of carbon atoms such as methyl alcohol and ethyl alcohol can be used as the second treatment liquid. Thus, a liquid film can be formed on the resist without dissolving the resist. Further, since alcohols are more easily vaporized than pure water, the time required for drying the substrate after the ultrasonic irradiation treatment is completed can be shortened.
[0091]
【The invention's effect】
As described above, according to the present invention, it is possible to flatten streaks and the like that occur particularly when the processing liquid is applied by scanning the nozzle, and the coating thickness of the processing liquid such as resist can be made uniform. can do.
[Brief description of the drawings]
FIG. 1 is a plan view showing an overall configuration of a coating and developing treatment system according to an embodiment of the present invention.
FIG. 2 is a front view of the coating and developing treatment system shown in FIG.
FIG. 3 is a rear view of the coating and developing treatment system shown in FIG. 1;
FIG. 4 is a perspective view of a resist coating unit according to an embodiment of the present invention.
FIG. 5 is a cross-sectional view showing an ultrasonic irradiation body according to one embodiment.
FIG. 6 is a cross-sectional view showing an ultrasonic irradiator according to one embodiment.
FIG. 7 is a perspective view from below of a resist nozzle.
FIG. 8 is a perspective view showing a coating process with a resist nozzle.
FIG. 9 is a perspective view of a resist coating unit according to another embodiment.
FIG. 10 is a cross-sectional view showing an apparatus for supplying helium gas between a substrate and an ultrasonic irradiation body.
FIG. 11 is a cross-sectional view of an ultrasonic irradiation apparatus according to an embodiment.
FIG. 12 is a perspective view showing another example of an apparatus for applying a resist and irradiating ultrasonic waves.
13 is a side view showing a state when ultrasonic waves are irradiated in the apparatus shown in FIG. 12. FIG.
[Explanation of symbols]
G ... Glass substrate
CT: Resist coating unit
R ... resist
16: Resist solution supply section
17 ... Control unit
30 ... Drive device
36 ... Z-axis controller
37 ... X-axis controller
38 ... Chuck member
41 ... Registration nozzle
42. Ultrasonic irradiation body
50, 60 ... Piezoelectric element controller
52. Piezoelectric element
62 ... Helium gas supply unit
68 ... Pure water supply section
80 ... Ultrasonic irradiation device

Claims (11)

Application means for applying the first treatment liquid to the surface of the substrate;
An ultrasonic irradiator that is disposed on the surface side of the substrate to which the first treatment liquid is applied and irradiates the first treatment liquid with ultrasonic waves;
A substrate processing apparatus comprising gas supply means for supplying a predetermined gas to a gap between the ultrasonic irradiation body and the surface of the first processing liquid applied to the surface of the substrate. The substrate processing apparatus according to claim 1 ,
The substrate processing apparatus, wherein the gas supply means supplies helium gas. Application means for applying the first treatment liquid to the surface of the substrate;
An ultrasonic irradiator that is disposed on the surface side of the substrate to which the first treatment liquid is applied and irradiates the first treatment liquid with ultrasonic waves;
Supply means for supplying a second treatment liquid onto the surface of the first treatment liquid applied to the surface of the substrate ;
The substrate processing apparatus, wherein the ultrasonic irradiator irradiates the first processing liquid with ultrasonic waves through the second processing liquid supplied by the supplying means. The substrate processing apparatus according to claim 3 , wherein
The substrate processing apparatus, wherein the ultrasonic irradiation body irradiates ultrasonic waves while being in contact with the second processing liquid. The substrate processing apparatus according to claim 3 , wherein
The substrate processing apparatus, wherein the supplying means supplies pure water. Application means for applying the first treatment liquid to the surface of the substrate;
An ultrasonic irradiator that is disposed on the surface side of the substrate to which the first treatment liquid is applied and irradiates the first treatment liquid with ultrasonic waves;
A processing chamber that can be sealed;
Control means for controlling the pressure in the processing chamber ,
The ultrasonic irradiation body is provided in the processing chamber,
The substrate processing apparatus, wherein the control means includes means for controlling a pressure in the processing chamber to be higher than an atmospheric pressure while irradiating at least ultrasonic waves with the ultrasonic irradiation body. The substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus further comprising means for moving the ultrasonic irradiation body relative to the substrate on the surface of the substrate. (A) applying a first treatment liquid to the surface of the substrate;
(B) irradiating the first treatment liquid with ultrasonic waves from the surface side of the substrate coated with the first treatment liquid ,
The step (b) is a step (c) of supplying a predetermined gas between the ultrasonic irradiation body that irradiates the ultrasonic wave and the surface of the first treatment liquid applied to the surface of the substrate.
The substrate processing method characterized by comprising. The substrate processing method according to claim 8 , comprising:
The step (c) includes a step of supplying helium gas between the ultrasonic irradiation body and the surface of the applied first processing liquid. The substrate processing method according to claim 9 , comprising:
(D) after the step (a), before the step (b), further comprising a step of supplying a second processing liquid to the surface of the first processing liquid applied to the surface of the substrate;
The step (b) includes a step of irradiating the first processing liquid with ultrasonic waves through the second processing liquid supplied in the step (d). (A) applying a first treatment liquid to the surface of the substrate;
(B) irradiating the first treatment liquid with ultrasonic waves from the surface side of the substrate coated with the first treatment liquid,
The step (b) is performed in a process chamber that can be sealed, and includes a step of controlling the pressure in the process chamber to be higher than atmospheric pressure.

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