JP3815455B2 - Semiconductor carrier - Google Patents

Description

【００２２】
上記表１の結果から明らかなように、内方延出部１５ｂ，１６ｂのみを形成しても、リブ部１７のみを形成しても、あるいは取付部１５，１６の厚みのみを厚くしても、亀裂、破壊が生じることが分かった。そこで、本発明においては、上述のようにこれらを複合させるようにし、内方延出部１５ｂ，１６ｂを取付部１５，１６の内側に一体的に形成するとともに、リブ部１７を内方延出部１５ｂ，１６ｂ間にこれらと一体的に形成するようにした。この場合、内方延出部の幅ｘをどの程度に設定し、リブ部の高さｙをどの程度に設定するのが望ましいかを以下に検討した。
【００２３】
そこで、内方延出部１５ｂ，１６ｂの幅ｘが２．０ｍｍで、リブ部１７の高さｙが２．０ｍｍで、１５，１６の厚みｚが１．５ｍｍになるように半導体キャリア１０を作製して試料ｂ１とした。この場合、内方延出部１５ｂ，１６ｂがないときの各取付部１５，１６の幅Ｘは３．８５ｍｍで、高さＹは４．５ｍｍで、開口部の直径は２．６ｍｍになるように形成されており、以下においても同様である。また、内方延出部１５ｂ，１６ｂの幅ｘが２．０ｍｍで、リブ部１７の高さｙが２．０ｍｍで、１５，１６の厚みｚが１．０ｍｍになるように半導体キャリアを作製して試料ｂ２とした。さらに、内方延出部１５ｂ，１６ｂの幅ｘが０ｍｍで、リブ部１７の高さｙが２．０ｍｍで、１５，１６厚みｚが１．５ｍｍになるような半導体キャリアを作製して試料ｂ３とした。
【００２４】
そして、これらの各試料ｂ１〜ｂ３を用いて、上述と同様の試験条件で、ＭＩＬ−ＳＴＤ−８８３Ｃ規格に規定される機械的衝撃試験を行ったところ、下記の表２に示すような試験結果が得られた。なお、表２の亀裂、破壊の発生個数においては、このような試験を各試料ｂ１〜ｂ３を３個ずつ用いて行った場合の亀裂、破壊の発生個数を示している。そして、０／３は亀裂、破壊が生じた個数が０であることを示し、１／３は亀裂、破壊が個数が１個であることを示している。
【００２５】
【表２】

【００２６】
上記表２の結果から明らかなように、取付部１５，１６間に内方延出部１５ｂ，１６ｂを設けることなく、取付部１５，１６の厚みを厚くし、リブ部１７を設けるようにした試料ｂ３においては、亀裂、破壊が生じたものがあった。一方、内方延出部１５ｂ，１６ｂおよびリブ部１７の両方を形成した試料ｂ１と試料ｂ２とを比較すると、試料ｂ１のように取付部１５，１６の厚みを厚くしても、あるいは、試料ｂ２のように取付部１５，１６の厚みを厚くしなくても、亀裂、破壊が生じることはなかった。
【００２７】
このことは、捻り剛性に対しては、取付部１５，１６間にリブ部１７を設けるとともに、取付部１５，１６間に内方延出部１５ｂ，１６ｂを設けた方が、取付部１５，１６の厚みを厚くするよりは効果的であることを意味する。したがって、内方延出部１５ｂ，１６ｂを取付部１５，１６の内側に一体的に形成するとともに、リブ部１７を内方延出部１５ｂ，１６ｂ間にこれらと一体的に形成する必要がある。この場合、内方延出部１５ｂ，１６ｂの幅は２ｍｍ以上にするのが望ましく、リブ部１７の高さも２ｍｍ以上にするのが望ましい。
【００２８】
３．半導体キャリヤの作製
ついで、上述のような構成となる半導体キャリヤ１０の作製手順を以下に詳細に説明する。まず、Ｗの含有割合が９５〜７０質量％で、Ｃｕの含有割合が５〜３０質量％になるように調整した平均粒径が１μｍのＷ−Ｃｕ複合金属粉末を用意した。この後、このＷ−Ｃｕ複合金属粉末をジェットミルに投入した。このとき、ジェットミルの圧力を３〜１０ｂａｒにし、ジェットミルの回転数を５０００ｒｐｍにした。この状態でジェットミルを２０分間回転させて、Ｗ−Ｃｕ複合金属粉末が互いに凝集しないようにして、Ｗ−Ｃｕ複合金属粉末を微細化、球状化した。これにより、平均粒径が０．１〜０．３μｍのＷ−Ｃｕ複合金属粉末を得た。
【００２９】
なお、Ｗ−Ｃｕ複合金属粉末に代えて、Ｗ粉末とＣｕ粉末の混合金属粉末を用いるようにしてもよい。この場合も、Ｗの割合が９５〜７０質量％で、Ｃｕの割合が５〜３０質量％になるように調整する必要がある。また、ジェットミルを用いることに代えて、ボールミルを用いてＷ−Ｃｕ複合金属粉末あるいはＷ粉末とＣｕ粉末の混合金属粉末を粉砕するようにしてもよい。この場合は、回転数が５０００ｒｐｍで２０〜２００時間ボールミルを回転させて、複合金属粉末あるいは混合金属粉末を平均粒径が０．１〜０．３μｍになるまで粉砕する必要がある。
【００３０】
ついで、このようにして得られた平均粒径が０．１〜０．３μｍのＷ−Ｃｕ複合金属粉末４０〜４５ｖｏｌ％に対して、バインダーを６０〜５５ｖｏｌ％添加し、１００〜２００℃に加熱しながら混合、混練して成形用組成物とした。なお、バインダーとしては、ポリプロピレン（ＰＰ）、ポリスチレン（ＰＳ）、ポリエチレン（ＰＥ）、アクリル、ＰＯＭ系樹脂などの有機系樹脂に、パラフィンワックス、カルナウパワックス、蜜蝋などのワックスを添加したものを用いるのが望ましい。
【００３１】
ついで、得られた成形用組成物をペレタイザーによりペレット化した。これを型締圧が２０ｔの射出成型機のホッパ内に投入し、射出温度が１６０℃で、金型温度が２５℃の金型内に射出成形した。この後、金型を水冷して射出物を固化させて半導体キャリヤ１０になるグリーン体（成形体）を得た。この後、得られたグリーン体を図示しない脱バインダ装置内に配置した後、脱バインダ装置内に１リットル／分の流量の窒素ガスを流入させて、窒素雰囲気にした。そして、昇温速度が０．１℃／分で加熱し、５５０℃の温度を２時間保持して、グリーン体を脱バインダ処理した。
【００３２】
この脱バインダ処理により、上述したバインダは揮散して（除去されて）、ＷとＣｕからなるブラウン体とした。この後、室温まで冷却してブラウン体を脱バインダ装置から取り出した。ついで、得られたブラウン体を図示しない脱酸素装置内に配置した。この後、脱酸素装置内に１〜１０リットル／分の流量の水素ガスを流入させて、銅の融点温度以下の５００℃〜１０００℃の温度環境で、ブラウン体を水素ガスの気流に充分に曝して、ブラウン体を脱酸素処理した。
【００３３】
この脱酸素処理により、ブラウン体を構成するタングステン粒子表面の酸化層は充分に還元されて、銅との濡れ性が向上するようになる。ついで、脱酸素処理されたブラウン体を焼結炉に入れ、水素気流中で、昇温速度が５℃／１時間で、１０００〜１５００℃の焼結温度になるまで昇温した。この後、この焼結温度を２時間保持することにより焼結した。これにより、図１に示すような半導体キャリヤ１０が得られる。
【００３４】
【発明の効果】
上述したように、本発明の半導体キャリヤ１０においては、第１取付部１５と第２取付部１６との間に内方延出部１５ｂ，１６ｂとリブ部１７が一体的に形成されるようにしている。この結果、本体部１３と取付部１５，１６との境界部で、亀裂が発生することが防止でき、かつ破壊が生じることも防止でき、これらの本体部１３と取付部１５，１６との境界部での捻り剛性が向上した。この場合、内方延出部の幅を２ｍｍ以上にし、かつリブ部の高さを２ｍｍ以上にすると、捻り剛性などの機械的強度が向上するので、内方延出部の幅は２ｍｍ以上にするのが望ましく、リブ部の高さも２ｍｍ以上にするのが望ましい。
【００３５】
なお、上述した実施形態においては、本発明の半導体キャリヤを光半導体モジュールに適用する例について説明したが、本発明の半導体キャリヤは、光半導体モジュールに限らず、各種の半導体素子を搭載、収容する半導体パッケージなどの半導体装置に用いることができる。
【図面の簡単な説明】
【図１】 本発明の半導体キャリヤをステムタイプの光半導体モジュールに用いられる半導体キャリヤに適用した一例を模式的に示す図であり、図１（ａ）は斜視図であり、図１（ｂ）は正面図である。
【図２】 従来例の半導体キャリヤを模式的に示す図であり、図２（ａ）は斜視図であり、図２（ｂ）は正面図であり、図２（ｃ）は他の従来例を模式的に示す正面図である。
【符号の説明】
１０…半導体キャリヤ、１１…マウント部、１２…キャリヤベース、１３…本体部、１４…リード固定部、１４ａ…リード線挿通孔、１５…第１取付部、１５ａ…取付用開口、１５ｂ…内方延出部、１６…第２取付部、１６ａ…取付用開口、１６ｂ…内方延出部、１７…リブ部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor carrier having a mount portion on which a semiconductor element such as a high-power semiconductor laser used for optical communication is mounted, and more particularly to a semiconductor carrier having a low thermal expansion coefficient, high heat dissipation, and excellent shock resistance.
[0002]
[Prior art]
With the increase in capacity of optical communication, high-power semiconductor laser elements have come to be used, but such semiconductor laser elements generate a large amount of heat. For this reason, when this type of semiconductor laser device is mounted on a semiconductor carrier to constitute a semiconductor laser module, the heat dissipation of the heat generated from the semiconductor laser device is poor and the power consumption of the semiconductor laser device increases. Occurred. Thus, a semiconductor laser module that can efficiently dissipate heat generated from the semiconductor laser element and reduce power consumption has been proposed in Patent Document 1 (Japanese Patent Laid-Open No. 2001-284700).
[0003]
By the way, the semiconductor laser module proposed in the above-mentioned Patent Document 1 is cooled using the Peltier module, so that the heat dissipation efficiency is improved, but on the other hand, there is a problem that the power consumption by the Peltier module is large. It was. Therefore, as a semiconductor carrier having a mount portion on which a semiconductor element such as a high-power semiconductor laser used for optical communication is mounted, it is easy to manufacture, has a low thermal expansion coefficient, and a high heat dissipation tungsten-copper (WCu) alloy. It came to be comprised with the sintered compact or the sintered compact of a molybdenum-copper (MoCu) alloy. If a sintered body made of an alloy having such a low thermal expansion coefficient and a high heat dissipation property is used, heat generated from the semiconductor laser element can be efficiently radiated without using a Peltier module.
[0004]
In this case, in order to form this type of sintered body accurately and easily, a semiconductor carrier is produced by forming into a predetermined shape by MIM (Metal Injection Molding) method and then sintering. As shown in FIGS. 2A and 2B, this type of semiconductor carrier 20 includes a carrier base 22 having a mount portion 21 on which a semiconductor laser is mounted, and the mount portion 21 and the carrier base 22 are connected to each other. It is integrally formed by sintering. The carrier base 22 is formed in a flat plate-shaped main body portion 23, a disk-shaped lead fixing portion 24 formed on the main body portion 23, and an L-shape bent from the main body portion 22. And a pair of mounting portions 25, 26. The attachment portions 25 and 26 are respectively provided with attachment openings 25a and 26a for attaching the semiconductor carrier 20 to an external member.
[0005]
The mount 21 positioned on the carrier base 22 has a planar surface on one side wall, and a semiconductor element such as a semiconductor laser is fixed and held on the planarized surface. Then, the semiconductor carrier 20 formed in this way is arranged on the fixing part of the external member, and screws are attached to the attachment parts 25 and 26, whereby the semiconductor carrier 20 is fixed to the external member. Thereby, the emitted light from the semiconductor laser fixed to the mount portion 21 is emitted in the horizontal direction with respect to the fixed portion of the external member.
[0006]
In this case, each of the attachment portions 25 and 26 is formed by being bent into an L shape from the main body portion 22 and spaced apart from each other by a predetermined distance. This is a case of molding by the MIM (Metal Injection Molding) method. In addition, it is for preventing gas such as air from staying in the cavity of the mold. As a result, the strength of the mounting portions 25 and 26 decreases, and when an experiment is performed in which a mechanical impact load is applied in a state where the semiconductor carrier 20 is fixed on the fixing portion of the external member, There arises a problem that breakage occurs in the vicinity of the boundary between the main body 26 and the main body 22.
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-284700
[Problems to be solved by the invention]
Therefore, the present inventors, as shown in FIG. 2 (c), in order to reinforce the strength at the mounting portions 25 and 26, ribs protruding from the main body portion 22 between the mounting portions 25 and 26. The semiconductor carrier 20a in which the portion 27 was formed was manufactured and the fracture strength was examined. However, as described above, when the semiconductor carrier 20a provided with the rib portion 27 was fixed on the fixing portion of the external member, and a mechanical impact load was applied in this state, the main body portion 22 and each of the attachments were also attached. It was found that the torsional rigidity was low due to breakage at the boundary between the portions 25 and 26 (in this case, the extended portion of the rib portion 27).
[0008]
The present invention has been made to solve the above-described problems, and can be easily manufactured without degrading moldability, has high mechanical strength such as torsional rigidity, and has a high coefficient of thermal expansion. An object of the present invention is to provide a semiconductor carrier excellent in heat dissipation and impact resistance.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the semiconductor carrier of the present invention includes a carrier base having a mount portion on which a semiconductor element is mounted. The carrier base has a main body portion and an attachment portion for attaching the carrier base to the external member. The attachment portion has a first attachment portion and a second attachment portion provided with attachment openings at a predetermined interval. The first mounting portion and the second mounting portion are bent from the main body portion into an L shape. Also, between the first mounting portion and the second mounting portion, an inward extending portion that extends inward from each of the mounting portions and a rib portion that protrudes vertically from the main body portion are integrally formed. Is formed.
[0010]
Here, in order to reinforce the strength at the boundary between the mounting portion and the main body portion, each mounting portion is provided with an inward extending portion that extends inward from this, or protrudes from the main body portion between each mounting portion. An experiment (mechanical impact test stipulated in the MIL-STD-883C standard to be described later) was conducted to confirm the effect of strengthening the strength by increasing the thickness of each mounting portion or by increasing the thickness of each mounting portion. As a result, it has been found that, in any of these cases, the strength improvement effect is extremely small in the reinforcement alone.
[0011]
Therefore, in the semiconductor carrier of the present invention, the inwardly extending portion and the rib portion are integrally formed between the first mounting portion and the second mounting portion. When the mechanical shock test as described above was performed using the semiconductor carrier of the present invention configured as described above, it was possible to prevent cracks from occurring at the boundary portion between the main body portion and the mounting portion and to cause breakage. This can also be prevented, and it has been found that the torsional rigidity at the boundary between the main body and the mounting portion is improved. In this case, an experimental result was obtained that when the width of the inwardly extending portion was 2 mm or more and the height of the rib portion was 2 mm or more, mechanical strength such as torsional rigidity was improved. For this reason, the width of the inward extending portion is desirably 2 mm or more, and the height of the rib portion is desirably 2 mm or more.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Next, an embodiment in which the present invention is applied to a semiconductor carrier used in an optical semiconductor module will be described with reference to FIG. FIG. 1 is a diagram schematically showing an example in which the semiconductor carrier of the present invention is applied to a semiconductor carrier used in a stem type optical semiconductor module, FIG. 1 (a) is a perspective view, and FIG. b) is a front view.
[0013]
1. Semiconductor Carrier As shown in FIG. 1, the semiconductor carrier 10 of the present invention includes a carrier base 12 having a mount portion 11 on which a semiconductor laser is mounted. The mount portion 11 and the carrier base 12 are made of WCu alloy or MoCu. It is integrally formed of an alloy sintered body. The carrier base 12 is formed by bending the main body 13 having a flat shape and a slightly deformed shape, a disk-like lead fixing portion 14 formed on the main body 13, and an L-shape from the main body 13. And a pair of attachment portions 15 and 16 having openings 15a and 16a at the center. In addition, the mount part 11 located in the upper part of the carrier base 12 has a flat surface on one side wall and is formed in a hexagonal column shape. Then, a semiconductor element such as a semiconductor laser is fixed and held on the planarized surface.
[0014]
Further, the main body portion 13 is formed to be tapered from the attachment portions 15 and 16 side toward the central portion in order to reduce the size, and to be rectangular between the central portion and the tip portion. A through hole (not shown) communicating with the lead wire insertion holes 14 a, 14 a, 14 a formed in the lead fixing portion 14 is formed in the center portion. Lead wire insertion holes 14 a, 14 a, 14 a are formed in the disk-shaped lead fixing portion 14, and the lead wire insertion holes 14 a, 14 a, 14 a communicate with the through holes formed in the main body portion 13. Is formed. Thereby, a semiconductor element such as a semiconductor laser fixed to the mount portion 11 is inserted into the lead wire insertion holes 14a, 14a, 14a and connected to an external circuit connected to the fixed lead wire. .
[0015]
The pair of attachment portions 15 and 16 are formed to be bent in an L shape from the main body portion 13, and attachment openings 15 a and 16 a are formed in the center portion. In this case, an inward extending portion 15 b that extends inward (left side in FIG. 1) from the mounting portion 15 is formed integrally with the mounting portion 15. In addition, an inwardly extending portion 16 b that extends inward (right side in FIG. 1) from the attaching portion 16 is formed in the attaching portion 16. Further, a rib portion 17 protruding from the main body portion 13 is formed between the inwardly extending portion 15b and the inwardly extending portion 16b. And these main-body part 13, the lead fixing | fixed part 14, the attachment parts 15 and 16, the inward extension part 15b, the inward extension part 16b, and the rib part 17 are integrally formed by sintering. ing.
[0016]
The semiconductor carrier 10 configured as described above has a heat sink function, and is configured by a WCu alloy sintered body or a MoCu alloy sintered body as described above. In this case, in the sintered body of the WCu alloy, the average grain size of the W crystal grains is 3 μm or less, and the Cu content ratio is 5 wt% or more and 30 wt% or less with respect to the mass of the sintered body. Things are desirable. This is because even if the thermal expansion coefficient is the same, the smaller the grain size of the W crystal grains or Mo crystal grains in the sintered body structure, the higher the thermal conductivity. In the sintered body of the MoCu alloy, the average grain size of the Mo crystal grains is 3 μm or less, and the Cu content is 5 wt% or more and 30 wt% or less with respect to the mass of the sintered body. Is desirable. This is also because even when the thermal expansion coefficient is the same, the higher the W crystal grains or Mo crystal grains in the sintered body structure, the higher the thermal conductivity.
[0017]
2. Next, the width of the inwardly extending portion and the height of the rib portion were examined. Next, the width of the inwardly extending portion (x in FIG. 1) and the height of the rib portion (y in FIG. 1) were examined. Therefore, as shown in FIG. 1, the width x of the inwardly extending portions 15b and 16b is 3.0 mm, the height y of the rib portion 17 is 0 mm, and the thickness z of the mounting portions 15 and 16 is 1.0 mm. A semiconductor carrier 10 was prepared so as to be a sample a1. In this case, when there are no inwardly extending portions 15b, 16b, the width X of each mounting portion 15, 16 is 3.85 mm, the height Y is 4.5 mm, and the diameter of the opening is 2.6 mm. The same applies to the following.
[0018]
Further, the semiconductor carrier 10 is manufactured so that the width x of the inward extending portions 15b and 16b is 0 mm, the height y of the rib portion 17 is 0 mm, and the thickness z of the mounting portions 15 and 16 is 1.0 mm. Thus, the semiconductor carrier 10 is formed so that the width a of the inwardly extending portions 15b and 16b is 0 mm, the height y of the rib portion 17 is 0 mm, and the thickness z of the mounting portions 15 and 16 is 1.2 mm. The sample a3 is manufactured, and the semiconductor is so formed that the inwardly extending portions 15b and 16b have a width x of 0 mm, the rib portion 17 has a height y of 0 mm, and the mounting portions 15 and 16 have a thickness z of 1.5 mm. Carrier 10 was fabricated and used as sample a4.
[0019]
Further, the semiconductor carrier 10 is arranged so that the width x of the inward extending portions 15b and 16b is 0 mm, the height y of the rib portion 17 is 1.0 mm, and the thickness z of the mounting portions 15 and 16 is 1.0 mm. Produced as sample a5, the width x of the inwardly extending portions 15b and 16b is 0 mm, the height y of the rib portion 17 is 2.0 mm, and the thickness z of the mounting portions 15 and 16 is 1.0 mm. The semiconductor carrier 10 is manufactured as sample a6, the inwardly extending portions 15b and 16b have a width x of 0 mm, the rib portion 17 has a height y of 3.0 mm, and the mounting portions 15 and 16 have a thickness z of 1. A semiconductor carrier was prepared so as to have a thickness of 0.0 mm, and a sample a7 was obtained.
[0020]
Next, using each of these samples a1 to a7, these were each screwed to a test jig with a torque of 0.9 Kgf using M2 screws, and then mechanical shocks defined in the MIL-STD-883C standard. A test was conducted. As test conditions in this case, an impact pulse having a duration of 0.5 ms in the ± X direction, the ± Y direction, and the ± Z direction was repeated five times so that an impact force of 1500 G was applied to each sample a1 to a7. Each sample a1 to a7 was applied to a test jig fixed. As a result, test results as shown in Table 1 below were obtained. The number of occurrences of cracks and breaks in Table 1 indicates the number of occurrences of cracks and breaks when such a test is performed twice. 1/2 indicates that cracking and destruction occurred only once out of 2 times, and 2/2 indicates that cracking and destruction occurred twice.
[0021]
[Table 1]

[0022]
As is clear from the results in Table 1 above, only the inwardly extending portions 15b and 16b are formed, only the rib portion 17 is formed, or only the thickness of the mounting portions 15 and 16 is increased. It was found that cracks and fractures occurred. Therefore, in the present invention, these are combined as described above, and the inwardly extending portions 15b and 16b are integrally formed inside the mounting portions 15 and 16, and the rib portion 17 is extended inwardly. These portions are formed integrally with the portions 15b and 16b. In this case, the following discussion was made as to how much the width x of the inwardly extending portion should be set and what should be set the height y of the rib portion.
[0023]
Therefore, the semiconductor carrier 10 is arranged so that the width x of the inwardly extending portions 15b and 16b is 2.0 mm, the height y of the rib portion 17 is 2.0 mm, and the thickness z of the 15 and 16 is 1.5 mm. A sample b1 was produced. In this case, when there are no inwardly extending portions 15b, 16b, the width X of each mounting portion 15, 16 is 3.85 mm, the height Y is 4.5 mm, and the diameter of the opening is 2.6 mm. The same applies to the following. Further, the semiconductor carrier is manufactured so that the width x of the inward extending portions 15b and 16b is 2.0 mm, the height y of the rib portion 17 is 2.0 mm, and the thickness z of the 15 and 16 is 1.0 mm. Sample b2. Further, a semiconductor carrier is prepared in which the width x of the inwardly extending portions 15b and 16b is 0 mm, the height y of the rib portion 17 is 2.0 mm, and the thickness 15 and 16 is 1.5 mm. b3.
[0024]
Then, using these samples b1 to b3, the mechanical impact test defined in the MIL-STD-883C standard was performed under the same test conditions as above, and the test results as shown in Table 2 below were obtained. was gotten. The number of occurrences of cracks and fractures in Table 2 indicates the number of occurrences of cracks and fractures when such a test is performed using three samples b1 to b3. 0/3 indicates that the number of cracks and fractures is 0, and 1/3 indicates that the number of cracks and fractures is one.
[0025]
[Table 2]

[0026]
As is clear from the results of Table 2 above, the thickness of the attachment portions 15 and 16 is increased and the rib portion 17 is provided without providing the inwardly extending portions 15b and 16b between the attachment portions 15 and 16. In sample b3, there was a sample in which cracks and fractures occurred. On the other hand, comparing the sample b1 formed with both the inwardly extending portions 15b and 16b and the rib portion 17 with the sample b2, even if the thickness of the mounting portions 15 and 16 is increased as in the sample b1, Even if the thickness of the attachment portions 15 and 16 was not increased as in b2, cracks and breakage did not occur.
[0027]
This means that for the torsional rigidity, the rib portion 17 is provided between the attachment portions 15 and 16, and the inwardly extending portions 15b and 16b are provided between the attachment portions 15 and 16, the attachment portion 15, It means that it is more effective than increasing the thickness of 16. Therefore, it is necessary to integrally form the inwardly extending portions 15b and 16b inside the mounting portions 15 and 16 and to integrally form the rib portion 17 between the inwardly extending portions 15b and 16b. . In this case, the width of the inwardly extending portions 15b and 16b is desirably 2 mm or more, and the height of the rib portion 17 is desirably 2 mm or more.
[0028]
3. Next, a manufacturing procedure of the semiconductor carrier 10 having the above-described configuration will be described in detail. First, a W—Cu composite metal powder having an average particle diameter of 1 μm adjusted so that the W content is 95 to 70 mass% and the Cu content is 5 to 30 mass% was prepared. Thereafter, this W—Cu composite metal powder was put into a jet mill. At this time, the pressure of the jet mill was set to 3 to 10 bar, and the rotational speed of the jet mill was set to 5000 rpm. In this state, the jet mill was rotated for 20 minutes so that the W-Cu composite metal powders were not aggregated together, and the W-Cu composite metal powders were refined and spheroidized. Thereby, a W—Cu composite metal powder having an average particle size of 0.1 to 0.3 μm was obtained.
[0029]
Note that a mixed metal powder of W powder and Cu powder may be used instead of the W-Cu composite metal powder. Also in this case, it is necessary to adjust so that the ratio of W is 95 to 70 mass% and the ratio of Cu is 5 to 30 mass%. Further, instead of using a jet mill, a W-Cu composite metal powder or a mixed metal powder of W powder and Cu powder may be pulverized using a ball mill. In this case, it is necessary to rotate the ball mill at a rotational speed of 5000 rpm for 20 to 200 hours to pulverize the composite metal powder or the mixed metal powder until the average particle size becomes 0.1 to 0.3 μm.
[0030]
Subsequently, 60-55 vol% of binder is added to the W-Cu composite metal powder 40-45 vol% having an average particle size of 0.1-0.3 μm thus obtained, and heated to 100-200 ° C. While mixing and kneading, a molding composition was obtained. In addition, as a binder, what added wax, such as paraffin wax, carnapa wax, beeswax, to organic resins, such as a polypropylene (PP), a polystyrene (PS), polyethylene (PE), an acryl, and a POM resin, is used. Is desirable.
[0031]
Subsequently, the obtained molding composition was pelletized with a pelletizer. This was put into a hopper of an injection molding machine having a mold clamping pressure of 20 t, and injection molded into a mold having an injection temperature of 160 ° C. and a mold temperature of 25 ° C. Thereafter, the mold was cooled with water to solidify the injection, and a green body (molded body) to be the semiconductor carrier 10 was obtained. Thereafter, the obtained green body was placed in a binder removal apparatus (not shown), and then a nitrogen gas having a flow rate of 1 liter / minute was introduced into the binder removal apparatus to form a nitrogen atmosphere. And the temperature increase rate heated at 0.1 degree-C / min, the temperature of 550 degreeC was hold | maintained for 2 hours, and the green body was the binder removal process.
[0032]
By the binder removal process, the above-described binder is volatilized (removed) to obtain a brown body made of W and Cu. Then, it cooled to room temperature and took out the brown body from the binder removal apparatus. Next, the obtained brown body was placed in a deoxygenation device (not shown). Thereafter, hydrogen gas at a flow rate of 1 to 10 liters / minute is flown into the deoxygenation device, and the brown body is sufficiently placed in a hydrogen gas stream in a temperature environment of 500 ° C. to 1000 ° C. below the melting point temperature of copper. The brown body was deoxygenated by exposure.
[0033]
By this deoxygenation treatment, the oxide layer on the surface of the tungsten particles constituting the brown body is sufficiently reduced, and the wettability with copper is improved. Next, the deoxygenated brown body was placed in a sintering furnace and heated in a hydrogen stream until the temperature rose to 1000-1500 ° C. at a rate of temperature rise of 5 ° C./1 hour. Thereafter, the sintering was performed by maintaining this sintering temperature for 2 hours. Thereby, the semiconductor carrier 10 as shown in FIG. 1 is obtained.
[0034]
【The invention's effect】
As described above, in the semiconductor carrier 10 of the present invention, the inwardly extending portions 15b and 16b and the rib portion 17 are integrally formed between the first mounting portion 15 and the second mounting portion 16. ing. As a result, it is possible to prevent cracks from occurring at the boundary between the main body 13 and the mounting portions 15 and 16 and to prevent breakage, and the boundary between the main body 13 and the mounting portions 15 and 16 can be prevented. Improved torsional rigidity. In this case, if the width of the inward extending portion is 2 mm or more and the height of the rib portion is 2 mm or more, the mechanical strength such as torsional rigidity is improved, so the width of the inward extending portion is 2 mm or more. It is desirable to set the height of the rib portion to 2 mm or more.
[0035]
In the above-described embodiment, the example in which the semiconductor carrier of the present invention is applied to the optical semiconductor module has been described. However, the semiconductor carrier of the present invention is not limited to the optical semiconductor module, and various semiconductor elements are mounted and contained. It can be used for a semiconductor device such as a semiconductor package.
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing an example in which a semiconductor carrier of the present invention is applied to a semiconductor carrier used in a stem type optical semiconductor module, FIG. 1 (a) is a perspective view, and FIG. Is a front view.
FIG. 2 is a diagram schematically showing a semiconductor carrier of a conventional example, FIG. 2 (a) is a perspective view, FIG. 2 (b) is a front view, and FIG. 2 (c) is another conventional example. It is a front view which shows typically.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Semiconductor carrier, 11 ... Mount part, 12 ... Carrier base, 13 ... Main body part, 14 ... Lead fixing part, 14a ... Lead wire insertion hole, 15 ... First attachment part, 15a ... Installation opening, 15b ... Inward Extension part, 16 ... second attachment part, 16a ... opening for attachment, 16b ... inward extension part, 17 ... rib part

Claims (2)

A semiconductor carrier comprising a carrier base having a mount portion for mounting a semiconductor element,
The carrier base has a main body portion and an attachment portion for attaching the carrier base to an external member;
The mounting portion is formed with a first mounting portion and a second mounting portion having a mounting opening at a predetermined interval, and the first mounting portion and the second mounting portion are L-shaped from the main body portion. It is formed by bending
Between the first mounting portion and the second mounting portion, an inward extending portion that extends inward from each of the mounting portions and a rib portion that protrudes from the main body portion are formed. A semiconductor carrier characterized by the above. 2. The semiconductor carrier according to claim 1, wherein the width of the inward extending portion is 2 mm or more, and the height of the rib portion is 2 mm or more.

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