JP3825564B2 - Organic electroluminescence device - Google Patents
Organic electroluminescence device Download PDFInfo
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- JP3825564B2 JP3825564B2 JP14303498A JP14303498A JP3825564B2 JP 3825564 B2 JP3825564 B2 JP 3825564B2 JP 14303498 A JP14303498 A JP 14303498A JP 14303498 A JP14303498 A JP 14303498A JP 3825564 B2 JP3825564 B2 JP 3825564B2
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- 238000005401 electroluminescence Methods 0.000 title claims description 6
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 15
- 239000013522 chelant Substances 0.000 claims description 12
- 150000004696 coordination complex Chemical class 0.000 claims description 11
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 230000005525 hole transport Effects 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- JECYUBVRTQDVAT-UHFFFAOYSA-N 2-acetylphenol Chemical compound CC(=O)C1=CC=CC=C1O JECYUBVRTQDVAT-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229940081066 picolinic acid Drugs 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- -1 Biphenylyl Chemical group 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- RTODJBHXOKFTOQ-UHFFFAOYSA-K bis(pyridine-2-carbonyloxy)alumanyl pyridine-2-carboxylate Chemical compound O=C(O[Al](OC(=O)c1ccccn1)OC(=O)c1ccccn1)c1ccccn1 RTODJBHXOKFTOQ-UHFFFAOYSA-K 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
【0001】
【発明の属する技術分野】
本発明は、主として表示手段に用いられる有機エレクトロルミネッセンス素子に関する。
【0002】
【従来の技術】
有機エレクトロルミネッセンス素子(EL)素子は、新しい自己発光型素子として、期待されている。有機EL素子は、図1に示すように3層構造、具体的にはホール注入電極と電子注入電極との間に、ホール輸送層と発光層と電子輸送層とが形成された構造(DH構造)のような素子構造、或いは図2に示すように2層構造、具体的にはホール注入電極と電子注入電極との間に、ホール輸送層と発光層とが形成された構造(SH−A構造)、またはホール注入電極と電子注入電極との間に発光層と電子輸送層とが形成された構造(SH−B構造)を有している。
【0003】
一般に前述のホール注入電極としては、金やITO(インジウム−スズ酸化物)のような仕事関数の大きな電極材料を用い、一方電子注入電極としては、Mgのような仕事関数の小さな電極材料を用いる。
【0004】
また、ホール輸送層、発光層、電子輸送層には有機材料が用いられ、ホール輸送層はp型半導体の性質、電子輸送層はn型半導体の性質を有する材料が用いられる。また、発光層は、SH−A構造ではn型半導体の性質、SH−B構造ではp型半導体の性質、DH構造では中性に近い性質を有する材料が用いられる。いずれにしてもホール注入電極から注入されたホールと電子注入電極から注入された電子が、発光層とホール(または電子)輸送層の界面、及び発光層内で再結合して発光するという原理である。
【0005】
従って、発光機構が「衝突励起型発光」である無機EL素子と比べて、有機EL素子は低電圧で発光が可能という特徴を有している。
【0006】
【発明が解決しようとする課題】
然し乍ら、有機EL素子は、有機材料を主材料に用いているため、素子特性は有機材料の性能に大きく左右され、特に、発光材料、キャリア輸送材料、ホスト材料は重要であるが、従来製膜安定性の優れた特性を持つ材料がなかった。
【0011】
【課題を解決するための手段】
本発明の有機エレクトロルミネッセンス素子は、ホール注入電極と電子注入電極との間に、有機キャリア輸送層、及び有機発光層が積層形成された有機エレクトロルミネッセンス素子において、前記有機キャリア輸送層、及び有機発光層のうち少なくとも1層に配位子としてカルボキシル性水酸基、及びカルボニル基を有し、この両者の基で金属イオンと配位結合を形成したキレート金属錯体を含むことを特徴とする。
【0012】
前記キレート金属錯体のキレート金属錯体が化7の分子構造であることを特徴とする。
【0013】
【化7】
【0018】
【発明の実施の形態】
以下、本発明の実施の形態を図1、図2、並びに化1乃至化15に基づいて説明する。
【0019】
尚、「特許請求の範囲」で用いている「有機キャリア輸送層」は、ホール輸送層(3)、電子輸送層(5)のうちいずれか、又は双方をいう。
<実施の形態1>
実施の形態1に係る3層構造有機EL素子の構造を図1に示す。図1において、ガラス基板(1)上にインジウム−スズ酸化物(ITO)から成るホール注入電極(陽極)(2)、MTDATA(化9)から成るホール輸送層(厚み500Å)(3)、NPD(ホスト材料)(化10)とルブレン(化11)(ドーパント、NPDに対して5重量%)から成る発光層(厚み100Å)(4)、本発明によるキレート金属錯体トリス(ピコリン酸)アルミニウム(以下「Alp3」(化12)という。)から成る電子輸送層(厚み500Å)(5)、及びMgIn合金(MgとInの重量比率10対1)から成る電子注入電極(陰極)(厚み2000Å)(6)が順次積層形成されている。Alp3は、配位子としてカルボキシル性水酸基、及び複素環であるピリジン環の窒素を持ったピコリン酸を有し、このピコリン酸とAlイオンで配位結合を形成したキレート金属錯体である。
【0020】
【化9】
【0021】
【化10】
【0022】
【化11】
【0023】
【化12】
【0024】
ここで、前述の3層構造有機EL素子は以下のようにして作製する。
【0025】
まず、ガラス基板(1)上にインジウム−スズ酸化物(ITO)を形成してホール注入電極(2)を形成し、そのガラス基板(1)を中性洗剤により洗浄した後、アセトン中で20分間、エタノール中で20分間超音波洗浄を行う。
【0026】
次いで、ガラス基板(1)を沸騰したエタノール中に約1分間入れ、取り出した後、すぐに送風乾燥を行う。この後、ITOから成るホール注入電極(2)上にホール輸送層(3)、発光層(4)、電子輸送層(5)、電子注入電極(6)の順に真空蒸着法にて膜を形成した。尚、これらの蒸着はいずれも真空度1×10-6Torr、基板温度制御無しの条件下で行う。
【0027】
この素子の陽極(ホール注入電極(2))をプラス、陰極(電子注入電極(6))をマイナスにバイアスして、電圧を印加すると、電圧15V、輝度2580cd/m2の高輝度な黄色発光(発光ピーク波長:555nm、色度座標:x=0.456、y=0.528)を得ることができた。
【0028】
また、この素子を窒素ガス雰囲気中で1ヶ月保存した後、同様に順バイアスをかけると、同様な発光を示すことを確認した。
<Alp3の合成法>
ところで、電子輸送層(5)に用いたAlp3(化12)は以下の方法で合成を行う。
【0029】
ピコリン酸3.82g(29.4mmol)、及びトリス(イソプロポキシ)アルミニウム 2g(9.80mmol)をエタノール50ml中に入れ、窒素ガス雰囲気下で還流させる。1時間程度還流させると、白色の沈殿物が析出する。この沈殿物を吸引濾過し、乾燥させた後、トレイン・サブリメーション法を用いた昇華精製装置(H.J.Wagner, R.O.Loutfy, and C.K.Hsiao ; J. Mater. Sci.Vol.17,P2781 (1982))にかけて精製を行った結果、青色の螢光を持った結晶を得る。
<比較の形態1>
実施の形態1の素子構造において、電子輸送層に2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole ((株)同仁化学研究所製)を用いた。その他の材料などの条件は実施の形態1と同じである。尚、2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazoleは電子輸送材料としては既知の材料である(C. Adachi, T. Tsutsui, and S. Saito, Appl. Phys. Lett., Vol. 55, pp1489, (1989))。
【0030】
この素子に順バイアスを印加すると、電圧16V、輝度2020cd/m2の黄色発光を得ることができたが、実施の形態1と同様に素子を窒素ガス雰囲気中で1ヶ月保存した後、同様に順バイアスをかけると、発光は見られなかった。
【0031】
この原因を調べるため、素子の発光面を光学顕微鏡で観察した結果、発光面に粒子状の微結晶が多数析出していることがわかった。この微結晶の析出により、素子の有機膜の積層構造が破壊され、発光が起こらなかったものと考える。また、実施の形態1の素子を同様に光学顕微鏡観察すると、このような微結晶の析出がまったく見られなかった。
【0032】
このことにより、この比較の形態1による結晶の析出は、2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazoleから起こっているものと考える。従って、本発明の電子輸送材料Alp3は既存の電子輸送材料2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazoleに比べて、製膜後の安定性が優れており、素子の耐久性向上に有利であるといえる。
<実施の形態2>
実施の形態2は、実施の形態1の素子構造における電子輸送層にAl(co)3(化13)用いたものである。
【0033】
【化13】
【0034】
尚、その他の条件は実施の形態1と同じである。 Al(co)3は、配位子としてカルボキシル性水酸基、及びカルボニル基を持ったCoumarin-3-carboxilic acidを有し、このCoumarin-3-carboxilic acidとAlイオンと配位結合を形成したキレート金属錯体である。
<Al(co)3の合成法>
ところで、Al(co)3(化13)は以下の方法で合成を行う。
【0035】
Coumarin-3-carboxilic acid 2g(10.5mmol)、及びトリス(イソプロポキシ)アルミニウム0.72g(3.51mmol)をエタノール50ml中に入れ、窒素ガス雰囲気下で還流させる。2時間30分還流させると、青色の強い蛍光を有する白色の沈殿物が析出する。この沈殿物を吸引濾過し、乾燥させた後、再結晶して精製を行った。
【0036】
ところで、この素子の陽極をプラス、陰極をマイナスにバイアスして、電圧を印加すると、電圧14V、輝度2040cd/m2の高輝度な黄色発光(発光ピーク波長:556nm)を得ることができ、Al(co)3が電子輸送材料として機能していることがわかった。また、この素子を窒素ガス雰囲気中で1ヶ月保存した後、同様に順バイアスをかけると、同様な発光を示すことを確認し、実施形態1で示した既知の電子輸送材料2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazoleと比較して製膜後の安定性が高いことが分かった。
<実施の形態3>
実施の形態3に係る2層構造有機EL素子の構造を図2に示す。
【0037】
図2において、ガラス基板(1)上にインジウム−スズ酸化物(ITO)から成るホール注入電極(陽極)(2)、 TPD(化14)から成るホール輸送層(厚み500Å)(3)、本発明のAl(ap)3(化15)から成る発光層(厚み500Å)(4)、及びMgIn合金(MgとInの重量比率10対1)から成る電子注入電極(陰極)(厚み2000Å)(6)が順次積層形成されている。 Al(ap)3は、配位子としてフェノール性水酸基、及びカルボニル基を持ったo-ヒドロキシアセトフェノンを有し、このo-ヒドロキシアセトフェノンとAlイオンで配位結合を形成したキレート金属錯体である。
【0038】
【化14】
【0039】
【化15】
【0040】
この素子において、実施の形態1と同様に順方向に電圧を印加した結果、8Vで輝度135cd/m2の白色(色度座標:x=0.277, y=0.369)発光を得ることができた。また、この素子を窒素ガス雰囲気中で1ヶ月保存した後、同様に順バイアスをかけると、同様な発光を示すことを確認し、製膜後の安定性が高いことがわかった。
<Al(ap)3の合成法>
ところで、Al(ap)3(化15)は以下の方法で合成を行う。
o-ヒドロキシアセトフェノン2g(14.7mmol)、及びトリス(イソプロポキシ)アルミニウム1g(4.90mmol)をエタノール50ml中に入れ、窒素ガス雰囲気下で還流させる。2時間程度還流させると、黄白色の沈殿物が析出する。この沈殿物を吸引濾過し、乾燥させた後、再結晶して精製を行った。
【0041】
【発明の効果】
本発明によるキレート金属錯体を有機EL素子の有機キャリア輸送層、有機発光層のうちいずれか、又は双方に用いると、良好な発光特性を得ることができ、これより本発明によるキレート金属錯体はキャリア輸送材料として優れ、また、発光材料としても、優れた特性を示すことが分かった。
【図面の簡単な説明】
【図1】本発明に係る3層構造の有機エレクトロルミネッセント素子の概略構成図である。
【図2】本発明に係る2層構造の有機エレクトロルミネッセント素子の概略構成図である。
【符号の説明】
1…基板
2…ホール注入電極
3…ホール輸送層
4…発光層
5…電子輸送層
6…電子注入電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an organic electroluminescence element mainly used for display means.
[0002]
[Prior art]
An organic electroluminescence element (EL) element is expected as a new self-luminous element. As shown in FIG. 1, the organic EL element has a three-layer structure, specifically, a structure in which a hole transport layer, a light emitting layer, and an electron transport layer are formed between a hole injection electrode and an electron injection electrode (DH structure). 2) or a two-layer structure as shown in FIG. 2, specifically, a structure in which a hole transport layer and a light-emitting layer are formed between a hole injection electrode and an electron injection electrode (SH-A) Structure) or a structure in which a light emitting layer and an electron transport layer are formed between a hole injection electrode and an electron injection electrode (SH-B structure).
[0003]
In general, an electrode material having a high work function such as gold or ITO (indium-tin oxide) is used as the hole injection electrode, and an electrode material having a low work function such as Mg is used as the electron injection electrode. .
[0004]
An organic material is used for the hole transport layer, the light emitting layer, and the electron transport layer, and the hole transport layer is made of a p-type semiconductor and the electron transport layer is made of an n-type semiconductor. The light emitting layer is made of a material having an n-type semiconductor property in the SH-A structure, a p-type semiconductor property in the SH-B structure, and a neutral property in the DH structure. In any case, the principle is that holes injected from the hole injection electrode and electrons injected from the electron injection electrode recombine at the interface between the light emitting layer and the hole (or electron) transport layer and within the light emitting layer to emit light. is there.
[0005]
Therefore, compared with an inorganic EL element whose light emission mechanism is “collision excitation type light emission”, the organic EL element has a feature that it can emit light at a low voltage.
[0006]
[Problems to be solved by the invention]
However, since the organic EL element uses an organic material as a main material, the element characteristics are greatly affected by the performance of the organic material. In particular, the light emitting material, the carrier transporting material, and the host material are important. There was no material with excellent stability characteristics.
[0011]
[Means for Solving the Problems]
The organic electroluminescent device of the present invention is an organic electroluminescent device in which an organic carrier transport layer and an organic light emitting layer are laminated between a hole injection electrode and an electron injection electrode. At least one of the layers includes a chelate metal complex having a carboxyl group and a carbonyl group as a ligand and forming a coordinate bond with a metal ion by both groups.
[0012]
The chelate metal complex of the chelate metal complex has a molecular structure of Formula 7.
[0013]
[Chemical 7]
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 and 2 and Chemical Formulas 1 to 15.
[0019]
The “organic carrier transport layer” used in “Claims” refers to either or both of the hole transport layer (3) and the electron transport layer (5).
<Embodiment 1>
The structure of the three-layer structure organic EL element according to Embodiment 1 is shown in FIG. In FIG. 1, on a glass substrate (1), a hole injection electrode (anode) made of indium-tin oxide (ITO) (2), a hole transport layer made of MTDATA (Chemical 9) (thickness 500 mm) (3), NPD (Host Material) (Chemical Formula 10) and Lubrene (Chemical Formula 11) (Dopant, 5% by Weight with respect to NPD) Light-Emitting Layer (Thickness 100 mm) (4), Chelate Metal Complex Tris (picolinate) Aluminum ( Hereinafter, an electron transport layer (thickness 500 mm) made of “Alp3” (Chemical Formula 12) (5), and an electron injection electrode (cathode) made of MgIn alloy (Mg to In weight ratio 10: 1) (thickness 2000 mm) (6) are sequentially stacked. Alp3 is a chelate metal complex having a picolinic acid having a carboxylic hydroxyl group and a nitrogen of a heterocyclic pyridine ring as a ligand, and forming a coordination bond with this picolinic acid and an Al ion.
[0020]
[Chemical 9]
[0021]
[Chemical Formula 10]
[0022]
Embedded image
[0023]
Embedded image
[0024]
Here, the above-mentioned three-layer structure organic EL element is produced as follows.
[0025]
First, indium-tin oxide (ITO) is formed on a glass substrate (1) to form a hole injection electrode (2). The glass substrate (1) is washed with a neutral detergent and then washed with acetone in 20%. Sonicate for 20 minutes in ethanol for 20 minutes.
[0026]
Next, the glass substrate (1) is placed in boiling ethanol for about 1 minute, taken out, and then blown and dried immediately. Thereafter, a film is formed on the hole injection electrode (2) made of ITO by a vacuum deposition method in the order of the hole transport layer (3), the light emitting layer (4), the electron transport layer (5), and the electron injection electrode (6). did. These vapor depositions are all performed under conditions of a vacuum degree of 1 × 10 −6 Torr and no substrate temperature control.
[0027]
When a voltage is applied with the anode (hole injection electrode (2)) of this element positively biased and the cathode (electron injection electrode (6)) negatively biased, a high luminance yellow light emission with a voltage of 15 V and a luminance of 2580 cd / m 2 is obtained. (Emission peak wavelength: 555 nm, chromaticity coordinates: x = 0.456, y = 0.528) could be obtained.
[0028]
Further, it was confirmed that when this device was stored in a nitrogen gas atmosphere for one month and then forward biased in the same manner, the same light emission was exhibited.
<Synthesis of Alp3>
By the way, Alp3 (chemical formula 12) used for the electron transport layer (5) is synthesized by the following method.
[0029]
3.82 g (29.4 mmol) picolinic acid and 2 g (9.80 mmol) tris (isopropoxy) aluminum are placed in 50 ml ethanol and refluxed under a nitrogen gas atmosphere. When refluxed for about 1 hour, a white precipitate is deposited. This precipitate is suction filtered, dried, and then purified by a sublimation purification apparatus (HJWagner, ROLoutfy, and CKHsiao; J. Mater. Sci. Vol. 17, P2781 (1982)) using the train sublimation method. As a result, a crystal with blue fluorescence is obtained.
<Comparison 1>
In the element structure of Embodiment 1, 2- (4-Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (manufactured by Dojindo Laboratories) is used for the electron transport layer. It was. Other conditions such as materials are the same as those in the first embodiment. 2- (4-Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole is a known material as an electron transport material (C. Adachi, T. Tsutsui, and S. Saito, Appl. Phys. Lett., Vol. 55, pp1489, (1989)).
[0030]
When a forward bias was applied to this element, yellow light emission with a voltage of 16 V and a luminance of 2020 cd / m 2 was obtained. Similarly to Embodiment 1, after storing the element in a nitrogen gas atmosphere for one month, When forward bias was applied, no luminescence was seen.
[0031]
In order to investigate this cause, the light emitting surface of the device was observed with an optical microscope. As a result, it was found that a large number of particulate crystallites were deposited on the light emitting surface. It is considered that the deposition of the microcrystals destroyed the stacked structure of the organic film of the device, and light emission did not occur. Further, when the element of Embodiment 1 was similarly observed with an optical microscope, such precipitation of microcrystals was not observed at all.
[0032]
From this, it is considered that the precipitation of crystals according to Comparative Example 1 occurs from 2- (4-Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole. Therefore, the electron transport material Alp3 of the present invention is more stable after film formation than the existing electron transport material 2- (4-Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole. Therefore, it can be said that it is advantageous for improving the durability of the element.
<Embodiment 2>
In the second embodiment, Al (co) 3 (Chemical Formula 13) is used for the electron transport layer in the element structure of the first embodiment.
[0033]
Embedded image
[0034]
Other conditions are the same as those in the first embodiment. Al (co) 3 has Coumarin-3-carboxilic acid having a carboxyl group and a carbonyl group as a ligand, and a chelate metal that forms a coordinate bond with this Coumarin-3-carboxilic acid and Al ions It is a complex.
<Synthesis of Al (co) 3 >
By the way, Al (co) 3 (Chemical Formula 13) is synthesized by the following method.
[0035]
2 g (10.5 mmol) of Coumarin-3-carboxilic acid and 0.72 g (3.51 mmol) of tris (isopropoxy) aluminum are placed in 50 ml of ethanol and refluxed under a nitrogen gas atmosphere. When refluxed for 2 hours and 30 minutes, a white precipitate having a strong blue fluorescence is deposited. The precipitate was suction filtered, dried, and then recrystallized for purification.
[0036]
By the way, when a voltage is applied by biasing the anode of the device positively and the cathode negatively, high luminance yellow light emission (emission peak wavelength: 556 nm) having a voltage of 14 V and a luminance of 2040 cd / m 2 can be obtained. It was found that (co) 3 functions as an electron transport material. Further, when this element was stored in a nitrogen gas atmosphere for one month and then forward biased in the same manner, it was confirmed that the same light emission was exhibited, and the known electron transport material 2- (4- It was found that the stability after film formation was higher than that of Biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole.
<Embodiment 3>
The structure of the two-layer structure organic EL element according to Embodiment 3 is shown in FIG.
[0037]
In FIG. 2, on a glass substrate (1), a hole injection electrode (anode) (2) made of indium-tin oxide (ITO), a hole transport layer (thickness 500 mm) (3) made of TPD (Chemical Formula 14), a book A light emitting layer (thickness 500 mm) (4) composed of Al (ap) 3 of the invention (4), and an electron injection electrode (cathode) composed of MgIn alloy (Mg to In weight ratio 10: 1) (thickness 2000 mm) ( 6) are sequentially stacked. Al (ap) 3 is a chelate metal complex having o-hydroxyacetophenone having a phenolic hydroxyl group and a carbonyl group as a ligand, and forming a coordination bond with this o-hydroxyacetophenone and Al ions.
[0038]
Embedded image
[0039]
Embedded image
[0040]
As a result of applying a voltage in the forward direction in this element as in the first embodiment, white light (chromaticity coordinates: x = 0.277, y = 0.369) with a luminance of 135 cd / m 2 at 8 V could be obtained. In addition, when the device was stored in a nitrogen gas atmosphere for 1 month and then forward biased in the same manner, it was confirmed that similar light emission was exhibited, and it was found that the stability after film formation was high.
<Synthesis of Al (ap) 3 >
By the way, Al (ap) 3 (Chemical Formula 15) is synthesized by the following method.
2 g (14.7 mmol) of o-hydroxyacetophenone and 1 g (4.90 mmol) of tris (isopropoxy) aluminum are placed in 50 ml of ethanol and refluxed under a nitrogen gas atmosphere. When refluxed for about 2 hours, a yellowish white precipitate is deposited. The precipitate was suction filtered, dried, and then recrystallized for purification.
[0041]
【The invention's effect】
When the chelate metal complex according to the present invention is used for either or both of the organic carrier transport layer and the organic light emitting layer of the organic EL device, good light emission characteristics can be obtained. It has been found that it is excellent as a transport material and also exhibits excellent characteristics as a light emitting material.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an organic electroluminescent element having a three-layer structure according to the present invention.
FIG. 2 is a schematic configuration diagram of a two-layer organic electroluminescent device according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Hole injection electrode 3 ... Hole transport layer 4 ... Light emitting layer 5 ... Electron transport layer 6 ... Electron injection electrode
Claims (3)
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| JP14303498A JP3825564B2 (en) | 1998-05-25 | 1998-05-25 | Organic electroluminescence device |
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| JP14303498A JP3825564B2 (en) | 1998-05-25 | 1998-05-25 | Organic electroluminescence device |
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| JP3825564B2 true JP3825564B2 (en) | 2006-09-27 |
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| JP4507420B2 (en) * | 2001-02-22 | 2010-07-21 | コニカミノルタホールディングス株式会社 | Organic electroluminescence device |
| JP3650082B2 (en) * | 2001-06-04 | 2005-05-18 | 三洋電機株式会社 | Organic electroluminescence device, light emitting material, and organic compound |
| US20050129978A1 (en) * | 2002-12-25 | 2005-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent device and method of manufacturing thereof |
| CN1795252A (en) * | 2003-05-22 | 2006-06-28 | 三菱化学株式会社 | Light-emitting devices and fluorescent materials |
| KR101503399B1 (en) * | 2007-12-28 | 2015-03-25 | 삼성디스플레이 주식회사 | Metal complex and organic light emitting device having organic film containing the same |
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| JP3137631B2 (en) * | 1989-08-25 | 2001-02-26 | 三井化学株式会社 | Light emitting element |
| JPH03196492A (en) * | 1989-12-26 | 1991-08-27 | Mitsui Toatsu Chem Inc | Thin film light emitting element |
| JP3069139B2 (en) * | 1990-03-16 | 2000-07-24 | 旭化成工業株式会社 | Dispersion type electroluminescent device |
| JP2788531B2 (en) * | 1990-04-03 | 1998-08-20 | 三井化学株式会社 | Organic complex light emitting device |
| JP2837223B2 (en) * | 1990-04-03 | 1998-12-14 | 三井化学株式会社 | Organic light emitting device |
| JP2998268B2 (en) * | 1991-04-19 | 2000-01-11 | 三菱化学株式会社 | Organic electroluminescent device |
| DE69305262T2 (en) * | 1992-07-13 | 1997-04-30 | Eastman Kodak Co | Internal transition organic electroluminescent device with a new composition |
| JPH0885253A (en) * | 1994-07-22 | 1996-04-02 | Mitsui Toatsu Chem Inc | Mixed polyvalent metal salt, polyvalent metal salt composition containing the metal salt, and recording material |
| EP0723701B1 (en) * | 1994-08-11 | 2000-01-12 | Koninklijke Philips Electronics N.V. | Solid-state image intensifier and x-ray examination apparatus comprising a solid-state image intensifier |
| JPH09102628A (en) * | 1995-10-04 | 1997-04-15 | Toray Ind Inc | Light emitting device and backlight or display device using the same |
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