JP3826595B2 - Static trip circuit for protective relay - Google Patents
Static trip circuit for protective relay Download PDFInfo
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- JP3826595B2 JP3826595B2 JP00487299A JP487299A JP3826595B2 JP 3826595 B2 JP3826595 B2 JP 3826595B2 JP 00487299 A JP00487299 A JP 00487299A JP 487299 A JP487299 A JP 487299A JP 3826595 B2 JP3826595 B2 JP 3826595B2
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- 230000003068 static effect Effects 0.000 title claims description 10
- 230000001681 protective effect Effects 0.000 title claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 3
- 101150073536 FET3 gene Proteins 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Description
【０００１】
【発明の属する技術分野】
本発明は、保護継電装置の静止形トリップ回路に係り、特に出力スイッチをドライブするドライブ回路の監視に関する。
【０００２】
【従来の技術】
保護継電装置において、しゃ断器のトリップ回路の出力スイッチとして、半導体スイッチを利用した静止形トリップ回路がある。このトリップ回路の出力スイッチには、例えば、スイッチング速度が高く、オン抵抗の小さいＭＯＳ型ＦＥＴが使用されている。このＭＯＳ型ＦＥＴにはトリップコイル駆動電流として数アンペアの大きな電流が流れ、この大電流回路を５ボルト系のディジタル回路により直接接続してドライブする構成ではノイズ等の問題があるため、両回路間をフォトカプラやフォトボルカプラ等の絶縁素子構成のドライブ回路で分離している。
【０００３】
図２は、ドライブ回路として、フォトボルカプラにより分離した静止形トリップ回路を示す。ＭＯＳ型ＦＥＴ１〜ＦＥＴ３は、直列接続されてトリップコイルＴＣへの通電回路を形成する。ＦＥＴ１は事故検出（ＦＳ）用の出力スイッチ、ＦＥＴ２は主検出（Ｍ）用の出力スイッチ、ＦＥＴ３は試験（１１Ｔ）用の出力スイッチであり、それぞれはフォトボルカプラＩＣ１〜ＩＣ３を介してオン・オフ駆動される。
【０００４】
通常時は、ＦＥＴ１及びＦＥＴ２はオフ状態にされ、ＦＥＴ３はオン状態にされ、事故発生でＦＥＴ１及びＦＥＴ２の両方がオン駆動されたときにトリップコイルＴＣにトリップ電流を流す。動作試験時には、ＦＥＴ３をオフ駆動し、事故検出系又は主検出系に点検信号を入力してその動作確認を行う。
【０００５】
【発明が解決しようとする課題】
ディジタル信号系と出力系とをフォトボルカプラやフォトカプラで絶縁する従来のトリップ回路において、フォトボルカプラやフォトカプラが劣化し、その出力が低下する場合がある。フォトカプラでは電流伝達率が低下し、出力電流が低下する。また、フォトボルカプラでは出力電流及び出力電圧の低下が起きる。
【０００６】
このような絶縁素子の劣化の検出は、常時監視用の監視回路を利用することができる。図３は、トリップ回路の監視回路を示す。各ＦＥＴ１〜ＦＥＴ３の両端には監視回路ＰＣ１〜ＰＣ３の入力段になるフォトカプラを設け、ＦＥＴ１〜ＦＥＴ３のオン・オフ状態でフォトカプラを駆動し、その出力段の発光素子ＬＥＤの点灯・消灯として表示する。抵抗Ｒａ，Ｒｂ，Ｒｃは電流制限抵抗である。
【０００７】
このような監視回路を利用したＦＥＴ１〜ＦＥＴ３のフォトボルカプラ（フォトカプラ）ＩＣ１〜ＩＣ３の劣化検出方式では、フォトボルカプラが完全に劣化した場合にはそれを検出できるが、劣化が徐々に進行している状態では検出できない場合がある。この例を以下に説明する。
【０００８】
図３において、監視電流Ｉａは、通常時ではＦＥＴ３がオン状態、ＦＥＴ１、２がオフ状態であるため、抵抗Ｒａ，Ｒｂを通してＦＥＴ３に流れ、この電流は数ｍＡのオーダーである。このとき、フォトボルカプラＩＣ３の劣化でＦＥＴ３のドライブ電圧Ｖｇが低下している場合、ＦＥＴ３が不完全なオン（数ｋΩのインピーダンスを呈する）状態となる。このとき、監視電流Ｉａは抵抗Ｒｃへも流れるが、この抵抗Ｒｃへの電流増加が抑制されるため、フォトカプラＰＣ３を完全にオンさせることができず、監視表示出力は正常となる誤った監視になる。
【０００９】
このドライブ電圧の不足は、点検時にはドライブ回路の操作に対する監視回路の出力表示から判定できるが、通常監視時にはドライブ電圧不足を検出できない。
【００１０】
このように、フォトボルカプラの劣化でＦＥＴ３が不完全なオン状態を起こしているにも拘わらず、これを常時監視で検出できないままほうちされると、実際の事故発生時にトリップコイル電流が不足し、しゃ断器のトリップ失敗になってしまう。
【００１１】
本発明の目的は、静止形トリップ回路の試験用出力スイッチのドライブ回路に出力不足があるか否かを常時監視で確実に検出できる静止形トリップ回路を提供することにある。
【００１２】
【課題を解決するための手段】
本発明は、試験用出力スイッチのドライブ回路の出力電圧不足を常時監視し、この監視で電圧不足を検出したときに出力スイッチを強制的にオフ状態にし、この強制オフでトリップ回路の監視回路に異常判定出力を得るようにしたもので、以下の構成を特徴とする。
【００１３】
事故検出用と主検出用及び試験用の出力スイッチとして半導体スイッチを使用し、各出力スイッチをフォトボルカプラ又はフォトカプラを有してオン・オフドライブするドライブ回路を設け、各出力スイッチの直列接続でトリップ電流を供給し、各出力スイッチのオン・オフ状態を常時監視する監視回路を設けた保護継電装置の静止形トリップ回路において、
前記試験用出力スイッチのドライブ回路は、前記フォトボルカプラ又はフォトカプラの出力電圧を常時監視し、この電圧が該出力スイッチのドライブ電圧として不足するときに該出力スイッチをオフ状態に強制する電圧監視回路を設けたことを特徴とする。
【００１４】
【発明の実施の形態】
図１は、本発明の実施形態を示す試験用出力スイッチのドライブ回路図である。同図のドライブ回路ＩＣ３が図２のそれと異なる部分は、電圧監視回路を設けた点にある。
【００１５】
この電圧監視回路は、フォトボルカプラの入力段電圧Ｖ0を検出するツェナーダイオードＺＤと抵抗Ｒ1の直列回路と、この抵抗Ｒ1の両端に表れる検出電圧の大小を判定し、この判定で電圧Ｖ0がＦＥＴ３のゲートオン電圧以下になったときにＦＥＴ３のゲートソース間電圧ＶGSを０ボルトに強制する比較回路ＣＯＭとを備える。
【００１６】
例えば、ＦＥＴ３のゲートオン電圧が最大値で３.０Ｖであるとすると、電圧検出には入力段電圧Ｖ0を検出し、比較回路ＣＯＭではこれをレベル比較で検出し、ＦＥＴ３のゲートソース間電圧ＶGSが３.０Ｖ以下になると判定したときにＦＥＴ３をオフ状態に強制する。
【００１７】
この強制オフ制御では、ＦＥＴ３がオフ状態になり、監視回路ＰＣ３の出力に発光素子ＬＥＤの点灯として表示される。
【００１８】
したがって、ドライブ回路ＩＣ３のドライブ電圧が不足する場合は、監視回路ＰＣ３にその表示がなされ、さらには監視回路ＰＣ３から保護継電装置の中央監視室に伝送することができる。
【００１９】
なお、実施形態においては、フォトボルカプラ構成のドライブ回路に適用する場合を示すが、フォトカプラ構成のものに適用して同等の作用効果を得ることができる。また、電圧監視回路は、適宜設計変更できるし、出力スイッチをＭＯＳ型ＦＥＴとするに限らない。さらに、出力スイッチの監視回路ＰＣ１〜ＰＣ３の構成も適宜設計変更できる。
【００２０】
【発明の効果】
以上のとおり、本発明によれば、試験用出力スイッチのドライブ回路の出力電圧不足を常時監視し、この監視で電圧不足を検出したときに出力スイッチを強制的にオフ状態にし、この強制オフでトリップ回路の監視回路に異常判定出力を得るようにしたため、ドライブ回路に出力不足があるか否かを常時監視で確実に検出できる効果がある。
【図面の簡単な説明】
【図１】本発明の実施形態を示す試験用出力スイッチのドライブ回路。
【図２】保護継電装置の静止形トリップ回路。
【図３】トリップ回路の監視回路。
【符号の説明】
ＦＥＴ１〜ＦＥＴ３…出力スイッチ
ＩＣ１〜ＩＣ３…ドライブ回路
ＰＣ１〜ＰＣ３…監視回路
ＺＤ…ツェナーダイオード
Ｒ1…抵抗
ＣＯＭ…比較回路[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a static trip circuit of a protective relay device, and more particularly to monitoring of a drive circuit that drives an output switch.
[0002]
[Prior art]
In the protective relay device, there is a static trip circuit using a semiconductor switch as an output switch of the trip circuit of the circuit breaker. As the output switch of this trip circuit, for example, a MOS FET having a high switching speed and a low on-resistance is used. A large current of several amperes flows as a trip coil drive current in this MOS FET, and there is a problem such as noise in the configuration in which this large current circuit is directly connected by a 5 volt digital circuit. Are separated by a drive circuit having an insulating element configuration such as a photocoupler or a photovoltaic coupler.
[0003]
FIG. 2 shows a static trip circuit separated by a photovoltaic coupler as a drive circuit. The MOS type FET1 to FET3 are connected in series to form an energization circuit for the trip coil TC. FET 1 is an output switch for accident detection (FS), FET 2 is an output switch for main detection (M), FET 3 is an output switch for test (11T), and each is turned on / off via photovoltaic couplers IC1 to IC3. Driven off.
[0004]
Normally, FET1 and FET2 are turned off, FET3 is turned on, and a trip current is caused to flow through the trip coil TC when an accident occurs and both FET1 and FET2 are turned on. At the time of the operation test, the FET 3 is turned off and an inspection signal is input to the accident detection system or the main detection system to confirm the operation.
[0005]
[Problems to be solved by the invention]
In a conventional trip circuit in which a digital signal system and an output system are insulated by a photovoltaic coupler or a photocoupler, the photovoltaic coupler or the photocoupler may deteriorate and its output may decrease. In the photocoupler, the current transfer rate is lowered and the output current is lowered. Further, in the photovoltaic coupler, the output current and the output voltage are reduced.
[0006]
A detection circuit for continuous monitoring can be used to detect such deterioration of the insulating element. FIG. 3 shows a trip circuit monitoring circuit. Photocouplers that serve as input stages for the monitoring circuits PC1 to PC3 are provided at both ends of each of the FET1 to FET3. The photocouplers are driven with the FET1 to FET3 turned on and off, and the light emitting elements LED in the output stage are turned on / off. indicate. Resistors Ra, Rb, and Rc are current limiting resistors.
[0007]
The degradation detection method of the photovoltaic couplers (photocouplers) IC1 to IC3 of FET1 to FET3 using such a monitoring circuit can detect when the photovoltaic coupler is completely degraded, but the degradation gradually proceeds. In some cases, it cannot be detected. This example will be described below.
[0008]
In FIG. 3, the monitoring current Ia normally flows to the FET 3 through the resistors Ra and Rb because the FET 3 is in the on state and the FETs 1 and 2 are in the off state, and this current is on the order of several mA. At this time, when the drive voltage Vg of the FET 3 is reduced due to the deterioration of the photovoltaic coupler IC3, the FET 3 is incompletely turned on (presenting an impedance of several kΩ). At this time, the monitoring current Ia also flows to the resistor Rc. However, since an increase in the current to the resistor Rc is suppressed, the photocoupler PC3 cannot be completely turned on, and the monitoring display output is normal. become.
[0009]
This shortage of drive voltage can be determined from the output display of the monitoring circuit for the operation of the drive circuit at the time of inspection, but the shortage of drive voltage cannot be detected during normal monitoring.
[0010]
As described above, even if the FET 3 is incompletely turned on due to deterioration of the photovoltaic coupler, the trip coil current is insufficient when an actual accident occurs if the pin is pinched without being detected by constant monitoring. Then, the trip of the breaker will fail.
[0011]
An object of the present invention is to provide a static trip circuit that can reliably detect whether or not there is an output shortage in the drive circuit of the test output switch of the static trip circuit.
[0012]
[Means for Solving the Problems]
The present invention constantly monitors the output voltage shortage of the drive circuit of the test output switch, and when this voltage shortage is detected by this monitoring, the output switch is forcibly turned off. An abnormality determination output is obtained and has the following configuration.
[0013]
Semiconductor switches are used as output switches for accident detection, main detection, and testing, and each output switch has a photovoltaic coupler or a photocoupler, and a drive circuit for on / off drive is provided, and each output switch is connected in series. In the static trip circuit of the protective relay device, which is provided with a monitoring circuit that constantly supplies the trip current and monitors the on / off state of each output switch,
The drive circuit of the test output switch constantly monitors the output voltage of the photovoltaic coupler or photocoupler, and when this voltage is insufficient as the drive voltage of the output switch, the voltage monitor forces the output switch to an off state. A circuit is provided.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a drive circuit diagram of a test output switch showing an embodiment of the present invention. The drive circuit IC3 shown in the figure is different from that shown in FIG. 2 in that a voltage monitoring circuit is provided.
[0015]
This voltage monitoring circuit determines the magnitude of the detection voltage appearing at both ends of the resistor R 1 and the series circuit of the Zener diode ZD and the resistor R 1 that detect the input stage voltage V 0 of the photovoltaic coupler. And a comparison circuit COM forcing the gate-source voltage V GS of the FET 3 to 0 volt when V 0 becomes equal to or lower than the gate-on voltage of the FET 3.
[0016]
For example, assuming that the gate-on voltage of the FET 3 is 3.0 V at the maximum value, the input stage voltage V 0 is detected for voltage detection, and the comparison circuit COM detects this by level comparison, and the gate-source voltage V of the FET 3 is detected. When it is determined that GS becomes 3.0 V or less, FET 3 is forced to be turned off.
[0017]
In this forced-off control, the FET 3 is turned off and displayed as the lighting of the light emitting element LED at the output of the monitoring circuit PC3.
[0018]
Therefore, when the drive voltage of the drive circuit IC3 is insufficient, the display is made on the monitoring circuit PC3, and further, it can be transmitted from the monitoring circuit PC3 to the central monitoring room of the protective relay device.
[0019]
In addition, although the case where it applies to the drive circuit of a photovol coupler structure is shown in embodiment, it can apply to the thing of a photocoupler structure, and can obtain an equivalent effect. Further, the design of the voltage monitoring circuit can be changed as appropriate, and the output switch is not limited to the MOS type FET. Further, the design of the output switch monitoring circuits PC1 to PC3 can be changed as appropriate.
[0020]
【The invention's effect】
As described above, according to the present invention, the output voltage shortage of the drive circuit of the test output switch is constantly monitored, and when the voltage shortage is detected by this monitoring, the output switch is forcibly turned off. Since an abnormality determination output is obtained in the trip circuit monitoring circuit, it is possible to reliably detect whether or not the drive circuit has insufficient output by constant monitoring.
[Brief description of the drawings]
FIG. 1 shows a drive circuit for a test output switch according to an embodiment of the present invention.
FIG. 2 shows a static trip circuit of a protective relay device.
FIG. 3 is a monitoring circuit of a trip circuit.
[Explanation of symbols]
FET1～FET3 ... output switch IC1 to IC3 ... drive circuit PC1-PC3 ... monitoring circuit ZD ... Zener diode R 1 ... resistor COM ... comparison circuit
Claims (1)
前記試験用出力スイッチのドライブ回路は、前記フォトボルカプラ又はフォトカプラの出力電圧を常時監視し、この電圧が該出力スイッチのドライブ電圧として不足するときに該出力スイッチをオフ状態に強制する電圧監視回路を設けたことを特徴とする保護継電装置の静止形トリップ回路。Semiconductor switches are used as output switches for accident detection, main detection, and testing, and each output switch has a photovoltaic coupler or a photocoupler, and a drive circuit for on / off drive is provided, and each output switch is connected in series. In the static trip circuit of the protective relay device, which is provided with a monitoring circuit that constantly supplies the trip current and monitors the on / off state of each output switch,
The drive circuit of the test output switch constantly monitors the output voltage of the photovoltaic coupler or photocoupler, and when this voltage is insufficient as the drive voltage of the output switch, the voltage monitor forces the output switch to an off state. A static trip circuit for a protective relay device, characterized in that a circuit is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00487299A JP3826595B2 (en) | 1999-01-12 | 1999-01-12 | Static trip circuit for protective relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00487299A JP3826595B2 (en) | 1999-01-12 | 1999-01-12 | Static trip circuit for protective relay |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000209769A JP2000209769A (en) | 2000-07-28 |
| JP3826595B2 true JP3826595B2 (en) | 2006-09-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00487299A Expired - Fee Related JP3826595B2 (en) | 1999-01-12 | 1999-01-12 | Static trip circuit for protective relay |
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| Country | Link |
|---|---|
| JP (1) | JP3826595B2 (en) |
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- 1999-01-12 JP JP00487299A patent/JP3826595B2/en not_active Expired - Fee Related
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| JP2000209769A (en) | 2000-07-28 |
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