JP3837540B2 - Method for producing single crystal tubular zinc oxide whisker - Google Patents
Method for producing single crystal tubular zinc oxide whisker Download PDFInfo
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- JP3837540B2 JP3837540B2 JP2003091626A JP2003091626A JP3837540B2 JP 3837540 B2 JP3837540 B2 JP 3837540B2 JP 2003091626 A JP2003091626 A JP 2003091626A JP 2003091626 A JP2003091626 A JP 2003091626A JP 3837540 B2 JP3837540 B2 JP 3837540B2
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- Prior art keywords
- zinc oxide
- single crystal
- oxide whisker
- zinc
- crystal tubular
- Prior art date
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 50
- 239000011787 zinc oxide Substances 0.000 title claims description 25
- 239000013078 crystal Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000005083 Zinc sulfide Substances 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 and subsequently Chemical compound 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は、青色や紫外領域の発光ダイオードやダイオードレーザのような光学デバイスへの応用や複合材料の強化材として有用な単結晶のチューブ状酸化亜鉛ウィスカーの製造方法に関する。
【0002】
【従来の技術】
II-VI族の化合物半導体である酸化亜鉛は発光ダイオードやダイオードレーザのような青色や紫外領域での光学分野への応用が期待されている。さらに、酸化亜鉛ウィスカーは高温強度、硬度、化学的安定性に優れているので、複合材料の強化材等の分野でも注目されている。酸化亜鉛ウィスカーは通常金属亜鉛粉末の気相酸化で製造されている。例えば、反応触媒としてゼオライトと酸化亜鉛の混合物で被覆した金属亜鉛粒子を酸化することにより酸化亜鉛ウィスカーを製造している(例えば、非特許文献1参照)。また、最近では、中空部を有する酸化亜鉛ナノチューブやチューブ状ウィスカーの製造方法も報告されている ( 例えば、非特許文献2,3参照)。これらの方法によって製造されたナノチューブやチューブ状ウィスカーの結晶構造は単結晶ではなく、多結晶である。
【0003】
【非特許文献1】
T.Yoshida、ほか、アプライド・フィジックス・レターズ(APPl.Phys.Rett.)64巻、3243頁、1994年
【非特許文献2】
J.Zhang, ほか、ケミカル・コミュニケーションズ(Chem.Commun.)3号、 262頁、2002年
【非特許文献3】
J.J.Wu,ほか、アプライド・フィジックス・レターズ(Appl.Phys.Rett.)81 巻、1312頁、2002年
【0004】
【発明が解決しようとする課題】
本発明は、従来の多結晶の酸化亜鉛に比べて、電子移動度や発光強度が優れている単結晶のチューブ状酸化亜鉛ウィスカーを製造することを解決すべき課題としている。
【0005】
【課題を解決するための手段】
本発明は、硫化亜鉛粉末と活性炭粉末とをアルゴン気流中、1100〜1200℃に、2〜4時間加熱して、一旦亜鉛を生成させた後、引き続き、アルゴンを酸素に切り替えて、1100〜1200℃で、1〜3時間加熱することにより、酸化反応を行わせて単結晶のチューブ状酸化亜鉛ウィスカーを製造する方法である。
【0006】
上記の方法で得られる大部分のウィスカーは直径400nmであり、長さは15μmであるが、直径150nm、長さ数マイクロメートルを有する少量のウィスカーも含まれている。大部分のウィスカーは中空部を有するチューブ状である。その壁の厚さは100〜150nmである。本発明の方法で得られた単結晶チューブ状酸化亜鉛ウィスカーは、青色、紫外領域での発光ダイオード、ダイオードレーザ等への応用や複合材料の強化材として期待される。
【0007】
【発明の実施の形態】
本発明の製造方法における条件について以下に説明する。
加熱装置は、抵抗加熱炉、高周波誘導加熱炉等本発明の方法における温度条件が満たされれば特に限定されない。
まず、硫化亜鉛粉末と活性炭粉末とをアルゴン気流中、1100〜1200℃に、2〜4時間加熱して、一旦亜鉛を生成させる。原料粉末は、粒子径10ミクロン程度とする。アルゴンガスの他の希ガスの混合も可能である。温度は、1100〜1200℃とする。硫化亜鉛の昇華温度が1185℃付近なので、この近傍で反応活性が出始める。温度が高すぎると、系外へ逸散してしまう。加熱時間は、2〜4時間とする。反応温度の下限に近いところで、行っているので、生成物が十分に生じるのに、2時間、4時間以上行っても、あまり変化がない。
【0008】
引き続き、酸素気流中で高温での熱酸化反応を行う。酸素気流は、希ガスとの混合でも問題ない。温度は、1100〜1200℃とする。あまり高温にすると、生成物が逸散する。反応は、前段で生成した液状亜鉛と酸素が反応して酸化亜鉛の結晶が生成する。
【0009】
【実施例】
実施例1
硫化亜鉛粉末(粒子径10μm以下;アルドリッチ社製)3.0gと活性炭粉末(100メッシュ;アルドリッチ社製)0.2gの混合物をアルミナ製のボートに入れ、このボートを外径42mm、長さ80cmの石英管の中心部に配置した。石英管を抵抗加熱炉の中に水平に置いた。石英管に蓋をして、10℃/minの昇温速度で加熱して1100℃まで温度を上げた。このとき、80sccmの流速でアルゴンガスを流し、3時間この温度に保った。
【0010】
上記の方法で亜鉛前駆物を製造し、引き続きアルゴンガスを同じ流速の酸素ガスに切り替えて、2時間、1100℃に温度を維持した。その後、10℃/minの下降速度で室温まで冷却した。白色の生成物が石英管の内壁に堆積していた。生成物の収率は硫化亜鉛を基準として20〜30%であった。
【0011】
生成物のX線回折のパターンを図1に示す。得られた回折ピークを見ると、既知の六方晶系酸化亜鉛のピークとよく一致し、その格子定数はa=0.325nm、c=0.521nmであり、硫化亜鉛や金属亜鉛に基づくピークは観測されなかった。
【0012】
図2(a)に、生成物の走査型電子顕微鏡像の写真を載せたが、直線状のウィスカーが大部分で、粒子状や他の形状は見られない。大部分のウィスカーは直径400nmであり、長さは15μmであるが、直径150nm、長さ数マイクロメートルを有する少量のウィスカーも含まれている。
【0013】
図2(b)に、高倍率の走査型電子顕微鏡像を示したが、大部分のウィスカーは中空部を有するチューブ状であることが分かった。その壁の厚さは100〜150nmである。
【0014】
図3に、X線エネルギー拡散スペクトルを示したが、その化学組成は亜鉛と酸素からなり、その元素比は、1:1.05であり、化学量論的な酸化亜鉛が生成されていることが分かった。また、電子線回折のパターンからは格子定数a=0.32nm、c=0.52nmで、前述のX線回折のパターンから得られた六方晶系の酸化亜鉛の値と同じであった。別の場所から採取したサンプルも同じ値を示し、単結晶構造であることが確認された。
【0015】
図4に、チューブ状酸化亜鉛ウィスカーの室温におけるフォトルミネッセンススベクトルを示す。381nmの強い鋭い発光ピークと583nmの弱い幅の広いピークが存在し、381nmのピークはバルクの酸化亜鉛のバンドギャップと一致することが確認された。
【0016】
【発明の効果】
本発明の方法により、従来の方法では、多結晶体しか得られなかった酸化亜鉛が、単結晶が得られるようになった。このことにより、電子移動度や発光強度が多結晶体よりもすぐれているので、電子デバイスへの応用に際して、大いに期待される。
【図面の簡単な説明】
【図1】単結晶チューブ状酸化亜鉛ウィスカーのX線回折のパターンである。
【図2】図2(a)は、単結晶チューブ状酸化亜鉛ウィスカーの低倍率走査型電子顕微鏡像を示す図面代用写真である。図2(b)は、単結晶チューブ状酸化亜鉛ウィスカーの高倍率走査型電子顕微鏡像を示す図面代用写真である。
【図3】図3は、単結晶チューブ状酸化亜鉛ウィスカーのX線エネルギー拡散スペクトルの図である。
【図4】図4は、単結晶チューブ状酸化亜鉛ウィスカーの室温におけるフォトルミネッセンススペクトルの図である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for producing a single crystal tubular zinc oxide whisker that is useful as an optical device such as a light emitting diode or diode laser in a blue or ultraviolet region and as a reinforcing material for a composite material.
[0002]
[Prior art]
Zinc oxide, a II-VI group compound semiconductor, is expected to be applied to the optical field in the blue and ultraviolet regions such as light-emitting diodes and diode lasers. Furthermore, since zinc oxide whiskers are excellent in high-temperature strength, hardness, and chemical stability, they are also attracting attention in the field of composite material reinforcements and the like. Zinc oxide whiskers are usually made by vapor phase oxidation of metallic zinc powder. For example, zinc oxide whiskers are produced by oxidizing metal zinc particles coated with a mixture of zeolite and zinc oxide as a reaction catalyst (see, for example, Non-Patent Document 1). Recently, a method for producing a zinc oxide nanotube having a hollow portion or a tubular whisker has also been reported (see, for example, Non-Patent Documents 2 and 3). The crystal structures of nanotubes and tube-like whiskers manufactured by these methods are not single crystals but polycrystalline.
[0003]
[Non-Patent Document 1]
T. Yoshida, et al., Applied Physics Letters (APPl. Phys. Rett.), 64, 3243, 1994 [Non-patent Document 2]
J. Zhang, et al., Chemical Communications (Chem. Commun.) 3, 262, 2002 [Non-Patent Document 3]
JJWu, et al., Applied Physics Letters (Appl. Phys. Rett.) 81, 1312, 2002 [0004]
[Problems to be solved by the invention]
An object of the present invention is to solve the production of a single crystal tubular zinc oxide whisker having excellent electron mobility and emission intensity as compared with conventional polycrystalline zinc oxide.
[0005]
[Means for Solving the Problems]
In the present invention, zinc sulfide powder and activated carbon powder are heated in an argon stream at 1100 to 1200 ° C. for 2 to 4 hours to once generate zinc, and subsequently, argon is switched to oxygen and 1100 to 1200 This is a method for producing a single crystal tubular zinc oxide whisker by heating at 1 ° C. for 1 to 3 hours to carry out an oxidation reaction.
[0006]
Most whiskers obtained by the above method have a diameter of 400 nm and a length of 15 μm, but a small amount of whiskers having a diameter of 150 nm and a length of several micrometers is also included. Most whiskers are tube-shaped with hollow portions. The wall thickness is 100-150 nm. The single crystal tubular zinc oxide whisker obtained by the method of the present invention is expected to be applied to light emitting diodes and diode lasers in the blue and ultraviolet regions, and as a reinforcing material for composite materials.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
The conditions in the production method of the present invention will be described below.
A heating apparatus will not be specifically limited if the temperature conditions in the method of this invention, such as a resistance heating furnace and a high frequency induction heating furnace, are satisfy | filled.
First, zinc sulfide powder and activated carbon powder are heated to 1100 to 1200 ° C. in an argon stream for 2 to 4 hours to once generate zinc. The raw material powder has a particle size of about 10 microns. Mixing of noble gases other than argon gas is also possible. The temperature is 1100-1200 ° C. Since the sublimation temperature of zinc sulfide is around 1185 ° C, the reaction activity starts to appear in this vicinity. If the temperature is too high, it will dissipate out of the system. The heating time is 2 to 4 hours. Since it is carried out near the lower limit of the reaction temperature, there is not much change even if the reaction is carried out for 2 hours or 4 hours or more for sufficient product formation.
[0008]
Subsequently, a thermal oxidation reaction is performed at a high temperature in an oxygen stream. The oxygen stream can be mixed with a rare gas without any problem. The temperature is 1100-1200 ° C. At too high a temperature, the product will dissipate. In the reaction, the liquid zinc produced in the previous stage reacts with oxygen to produce zinc oxide crystals.
[0009]
【Example】
Example 1
A mixture of 3.0 g of zinc sulfide powder (particle size of 10 μm or less; manufactured by Aldrich) and 0.2 g of activated carbon powder (100 mesh; manufactured by Aldrich) is placed in an alumina boat, and this boat is quartz with an outer diameter of 42 mm and a length of 80 cm. Located in the center of the tube. The quartz tube was placed horizontally in a resistance heating furnace. The quartz tube was covered and heated at a rate of temperature increase of 10 ° C / min to raise the temperature to 1100 ° C. At this time, argon gas was allowed to flow at a flow rate of 80 sccm and maintained at this temperature for 3 hours.
[0010]
The zinc precursor was produced by the above method, and the argon gas was subsequently switched to oxygen gas at the same flow rate, and the temperature was maintained at 1100 ° C. for 2 hours. Thereafter, it was cooled to room temperature at a descending rate of 10 ° C / min. A white product was deposited on the inner wall of the quartz tube. The product yield was 20-30% based on zinc sulfide.
[0011]
The X-ray diffraction pattern of the product is shown in FIG. Looking at the obtained diffraction peaks, they are in good agreement with the known hexagonal zinc oxide peaks, the lattice constants are a = 0.325 nm, c = 0.521 nm, and peaks based on zinc sulfide and metallic zinc are observed. There wasn't.
[0012]
FIG. 2 (a) is a photograph of a scanning electron microscope image of the product. Most of the whiskers are linear, and no particles or other shapes are seen. Most whiskers are 400 nm in diameter and 15 μm in length, but a small amount of whiskers having a diameter of 150 nm and a length of several micrometers is also included.
[0013]
FIG. 2 (b) shows a high-power scanning electron microscope image, and it has been found that most whiskers have a tube shape having a hollow portion. The wall thickness is 100-150 nm.
[0014]
Fig. 3 shows the X-ray energy diffusion spectrum. Its chemical composition consists of zinc and oxygen, and its element ratio is 1: 1.05. It is found that stoichiometric zinc oxide is produced. It was. From the electron diffraction pattern, the lattice constants were a = 0.32 nm and c = 0.52 nm, which were the same as the values of the hexagonal zinc oxide obtained from the X-ray diffraction pattern. Samples taken from different locations also showed the same value, confirming a single crystal structure.
[0015]
FIG. 4 shows a photoluminescence vector at room temperature of the tubular zinc oxide whisker. There was a strong sharp emission peak at 381 nm and a weak broad peak at 583 nm, and the 381 nm peak was confirmed to coincide with the band gap of bulk zinc oxide.
[0016]
【The invention's effect】
According to the method of the present invention, a single crystal can be obtained from zinc oxide, which can be obtained only by a polycrystal in the conventional method. As a result, the electron mobility and the emission intensity are superior to those of the polycrystalline body, and therefore, it is highly expected in application to electronic devices.
[Brief description of the drawings]
FIG. 1 is an X-ray diffraction pattern of a single crystal tubular zinc oxide whisker.
FIG. 2 (a) is a drawing-substituting photograph showing a low-magnification scanning electron microscope image of a single crystal tubular zinc oxide whisker. FIG. 2 (b) is a drawing-substituting photograph showing a high-magnification scanning electron microscope image of a single crystal tubular zinc oxide whisker.
FIG. 3 is a diagram of an X-ray energy diffusion spectrum of a single crystal tubular zinc oxide whisker.
FIG. 4 is a diagram of a photoluminescence spectrum of a single crystal tubular zinc oxide whisker at room temperature.
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003091626A JP3837540B2 (en) | 2003-03-28 | 2003-03-28 | Method for producing single crystal tubular zinc oxide whisker |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003091626A JP3837540B2 (en) | 2003-03-28 | 2003-03-28 | Method for producing single crystal tubular zinc oxide whisker |
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| JP2004299920A JP2004299920A (en) | 2004-10-28 |
| JP3837540B2 true JP3837540B2 (en) | 2006-10-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4538620B2 (en) * | 2003-06-02 | 2010-09-08 | 独立行政法人物質・材料研究機構 | Method for producing zinc sulfide nanocable containing zinc |
| JP4984234B2 (en) * | 2007-03-30 | 2012-07-25 | 国立大学法人長岡技術科学大学 | X-ray generator |
| JP2008120674A (en) * | 2007-10-18 | 2008-05-29 | National Institute For Materials Science | Zinc sulfide nanocable |
| CN101899708B (en) * | 2010-07-23 | 2012-02-01 | 北京航空航天大学 | A tetragonal zinc oxide/ferrite thin film material and its preparation method |
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