JP3841979B2 - Transmission / reception integrated circuit - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a transmission / reception integrated circuit in which a transmission modulation circuit that directly modulates a high-frequency signal with a baseband signal and a reception mixer circuit that converts the high-frequency signal into an intermediate frequency signal are integrated.
[0002]
[Prior art]
FIG. 7 is a circuit diagram showing a conventional transmission / reception integrated circuit shown in, for example, the IEICE technical report “Vol. 98 No. 518 (issued on Jan. 21, 1999)”, pp 47-50. In the figure, 1 is a semiconductor substrate, 2 and 3 are a transmission modulation circuit and a reception mixer circuit integrally formed on the semiconductor substrate 1. 4 is a carrier input terminal, 5 is a local oscillation wave input terminal, 6 is a baseband signal input terminal, 7 is a high frequency signal output terminal, 8 is a high frequency signal input terminal, and 9 is an intermediate frequency signal output terminal. In the transmission modulation circuit 2, reference numeral 10 denotes a matching circuit for impedance conversion of a carrier inputted from the carrier input terminal 4, 11 denotes a matching circuit 10 connected to the first gate G1, and a baseband signal input terminal 6 to the second gate G2. Are connected, the high-frequency signal output terminal 7 is connected to the drain D, and the source S is grounded. In the receiving mixer circuit 3, reference numeral 12 denotes a matching circuit for impedance conversion of the local oscillation wave input from the local oscillation wave input terminal 5, and reference numeral 13 denotes a first gate G1 to which the high-frequency signal input terminal 8 is connected. This is a dual gate FET in which the matching circuit 12 is connected to G2, the intermediate frequency signal output terminal 9 is connected to the drain D, and the source S is grounded.
[0003]
Next, the operation will be described.
First, the transmission modulation circuit 2 will be described. The carrier inputted from the carrier input terminal 4 is impedance-converted by the matching circuit 10 to prevent reflection of the inputted carrier by the dual gate FET 11 and is inputted to the first gate G 1 of the dual gate FET 11.
Here, the dual gate FET controls the current flowing from the drain to the source in accordance with the voltages input from the first gate and the second gate, and the dual gate FET 11 uses the carrier through the matching circuit 10 as the first gate. A baseband signal from the baseband signal input terminal 6 is input to the second gate G2, and a high frequency signal obtained by mixing the carrier and the baseband signal is output from the high frequency signal output terminal 7 through the drain terminal.
[0004]
Next, the reception mixer circuit 3 will be described. The local oscillation wave input from the local oscillation wave input terminal 5 has the same frequency as that of the carrier input from the carrier input terminal 4, is impedance-converted by the matching circuit 12, and is a dual gate of the input local oscillation wave Reflection by the FET 13 is prevented and the signal is input to the first gate G2 of the dual gate FET 13.
The dual gate FET 13 inputs a high frequency signal from the high frequency signal input terminal 8 to the first gate G1, and also inputs a local oscillation wave through the matching circuit 12 to the second gate G2, and mixes the high frequency signal and the local oscillation wave. The intermediate frequency signal is output from the intermediate frequency signal output terminal 9 through the drain terminal.
[0005]
[Problems to be solved by the invention]
Since the conventional transmission / reception integrated circuit is configured as described above, matching circuits 10 and 12 are provided for the carrier input to the transmission modulation circuit 2 and the local oscillation wave input to the reception mixer circuit 3, respectively. Therefore, there is a problem that the circuit scale becomes large.
Further, since the transmission modulation circuit 2 modulates with one dual gate FET 11, there is a problem that sufficient isolation cannot be obtained at the time of carrier cutoff and a high modulation degree cannot be obtained.
Furthermore, since the carrier or the local oscillation wave is individually input to the two dual gate FETs 11 and 13, the carrier power or the larger carrier power or the case where the carrier or the local oscillation wave is input to one of the dual gate FETs is reduced. There was a problem that local oscillation power was required.
[0006]
The present invention has been made to solve the above-described problems, and an object thereof is to obtain a small transmission / reception integrated circuit.
Another object of the present invention is to obtain a transmission / reception integrated circuit having a modulation characteristic with a large modulation degree.
Furthermore, it aims at obtaining the transmission / reception integrated circuit which operate | moves with little carrier electric power or local oscillation wave electric power.
[0007]
[Means for Solving the Problems]
In the transmission / reception integrated circuit according to the present invention, one matching circuit for inputting a carrier or a local oscillation wave, and a carrier through the matching circuit are input to the first gate of the first dual gate FET, and the baseband signal is input to the second gate. And a transmission modulation circuit for outputting a high frequency signal obtained by mixing the carrier and baseband signals, and a local oscillation through a matching circuit for the second gate by inputting the high frequency signal to the first gate of the second dual gate FET And a reception mixer circuit for inputting a wave and outputting an intermediate frequency signal obtained by mixing the high-frequency signal and the local oscillation wave.
[0008]
In the transmission / reception integrated circuit according to the present invention, one matching circuit that inputs a carrier or a local oscillation wave, a carrier through the matching circuit is input to the first gate of the triple gate FET, and a baseband signal is input to the second gate. The third gate is grounded at a high frequency, a transmission modulation circuit that outputs a high frequency signal obtained by mixing the carrier and baseband signals, a high frequency signal is input to the first gate of the dual gate FET, and a matching circuit is input to the second gate. And a reception mixer circuit for inputting the local oscillation wave and outputting an intermediate frequency signal obtained by mixing the high-frequency signal and the local oscillation wave.
[0009]
The transmission / reception integrated circuit according to the present invention includes a first bias circuit connected to the high frequency signal output side of the transmission modulation circuit, and a second bias circuit connected to the intermediate frequency signal output side of the reception mixer circuit. The bias of the second bias circuit is stopped during the operation of the transmission modulation circuit, and the bias of the first bias circuit is stopped during the operation of the reception mixer circuit.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below.
Embodiment 1 FIG.
1 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 1 of the present invention. In the figure, 1 is a semiconductor substrate, 21 is an input terminal for inputting a carrier or local oscillation wave, and 6 is a baseband signal input terminal. 7 is a high frequency signal output terminal, 8 is a high frequency signal input terminal, and 9 is an intermediate frequency signal output terminal.
Reference numeral 22 denotes one matching circuit for impedance-converting a carrier or a local oscillation wave input from the input terminal 4, 11 denotes a matching circuit 22 connected to the first gate G1, and a baseband signal input terminal 6 connected to the second gate G2. The dual-gate FET (first dual-gate FET: transmission modulation circuit) having the high-frequency signal output terminal 7 connected to the drain D and the source S grounded. Reference numeral 13 denotes a dual circuit in which the high frequency signal input terminal 8 is connected to the first gate G1, the matching circuit 22 is connected to the second gate G2, the intermediate frequency signal output terminal 9 is connected to the drain D, and the source S is grounded. This is a gate FET (second dual gate FET: reception mixer circuit).
[0011]
Next, the operation will be described.
The carrier input to the input terminal 21 or a local oscillation wave having the same frequency as the carrier is impedance-converted by the matching circuit 22 to prevent reflection of the input carrier or local oscillation wave by the dual gate FETs 11 and 13. Are input to the first gate G1 and the second gate G2 of the dual gate FETs 11 and 13, respectively.
Here, the dual gate FET controls the current flowing from the drain to the source in accordance with the voltages input from the first gate and the second gate, and the dual gate FET 11 uses the carrier through the matching circuit 22 as the first gate. A baseband signal from the baseband signal input terminal 6 is input to the second gate G2, and a high frequency signal obtained by mixing the carrier and the baseband signal is output from the high frequency signal output terminal 7 through the drain terminal.
On the other hand, the dual gate FET 13 inputs a high frequency signal from the high frequency signal input terminal 8 to the first gate G1, and also inputs a local oscillation wave through the matching circuit 22 to the second gate G2, and the high frequency signal and the local oscillation wave. Is output from the intermediate frequency signal output terminal 9 through the drain terminal.
[0012]
As described above, according to the first embodiment, by combining the matching circuit 22 for the carrier and the local oscillation wave, a small transmission / reception integrated circuit in which the transmission modulation circuit and the reception mixer circuit are integrated is obtained. The effect that can be obtained.
[0013]
Embodiment 2. FIG.
FIG. 2 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 2 of the present invention. In FIG. 2, reference numeral 23 denotes a matching circuit 22 connected to the first gate G1, and a baseband signal input terminal 6 to the second gate G2. Is connected, a capacitor 24 having one end grounded is connected to the third gate G3, a high-frequency signal output terminal 7 is connected to the drain D, and a source S is grounded.
Since other configurations are the same as those in FIG.
[0014]
Next, the operation will be described.
The triple gate FET 23 inputs the carrier through the matching circuit 22 to the first gate G1, and also inputs the baseband signal from the baseband signal input terminal 6 to the second gate G2, and mixes the carrier and the baseband signal. A high frequency signal is output from the high frequency signal output terminal 7 through the drain terminal.
FIG. 3 is an equivalent circuit diagram showing the transmission modulation circuit. The triple gate FET 23 operates as a source grounded FET amplifier 25 in the vicinity of the first gate G1, and the third gate G3 is connected by the capacitor 24 in the vicinity of the third gate G3. By grounding at a high frequency, it operates as a gate-grounded FET amplifier 26. By controlling the drain current flowing through the FET amplifier 25 with the baseband signal applied to the second gate G2, the gains of the two FET amplifiers 25 and 26 can be varied.
Since the operation of the reception mixer circuit composed of the dual gate FET 13 is the same as that of the first embodiment, the description thereof is omitted.
[0015]
As described above, according to the second embodiment, since the transmission modulation circuit is configured by the triple gate FET 23, the gain can be varied by the baseband signal applied to the second gate G2, and the single gate FET and the dual gate FET 23 can be changed. Compared with the case where the gate FET 11 is used, the variable amount of the gain is large, the isolation at the time of carrier interruption becomes high, and the effect of increasing the modulation degree can be obtained.
[0016]
Embodiment 3 FIG.
4 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 3 of the present invention. In the figure, 27 is a bias circuit (first bias circuit) connected to the drain terminal of the dual gate FET 11, and 28 is a dual circuit. A bias circuit (second bias circuit) connected to the drain terminal of the gate FET 13, 29 is a power supply terminal of the bias circuit 27, and 30 is a power supply terminal of the bias circuit 28.
Since other configurations are the same as those in FIG.
[0017]
Next, the operation will be described.
When the transmission modulation circuit composed of the dual gate FET 11 is operated, the power supply to the power supply terminal 30 of the reception mixer circuit composed of the dual gate FET 13 is stopped, the bias circuit 28 is disabled, and only the transmission modulation circuit is operated.
On the other hand, when the reception mixer circuit composed of the dual gate FET 13 is operated, power supply to the power supply terminal 29 of the transmission modulation circuit composed of the dual gate FET 11 is stopped, the bias circuit 27 is disabled, and only the reception mixer circuit is operated.
[0018]
As described above, according to the third embodiment, by supplying power to only the bias circuit to be operated of the transmission modulation circuit and the reception mixer circuit, it is not desired to operate, that is, power is supplied. Since the input impedance of the dual gate FET which is not high becomes high and the reactance component becomes main, it is possible to efficiently input the carrier or the local oscillation wave to the dual gate FET to be operated. Further, unnecessary current consumption can be prevented, and an effect of obtaining a transmission / reception integrated circuit with low current consumption can be obtained.
In the first to third embodiments, the circuit is integrated on the semiconductor substrate 1. However, the same effect can be obtained even if the discrete configuration is made by combining individual components.
In the third embodiment, the application to the transmission modulation circuit composed of the dual gate FET 11 as shown in the first embodiment is shown. However, the transmission composed of the triple gate FET 23 as shown in the second embodiment is shown. You may apply to a modulation circuit.
[0019]
Embodiment 4 FIG.
5 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 4 of the present invention. In the figure, 31 is a dielectric substrate on which the matching circuit 22 is mounted, and 32 is a semiconductor substrate on which the dual gate FETs 11 and 13 are mounted. is there.
Since other configurations are the same as those in FIG.
[0020]
Next, the operation will be described.
Since the matching circuit 22 is often composed of a microstrip circuit or the like, it is configured on the dielectric substrate 31, while the dual gate FETs 11 and 13 are configured on the semiconductor substrate 32.
[0021]
As described above, according to the fourth embodiment, since the matching circuit 22 is mounted on the dielectric substrate 31 and the dual gate FETs 11 and 13 are mounted on the semiconductor substrate 32, each component can be easily manufactured. be able to. Further, even if the frequency of the carrier and the local oscillation wave input after manufacture is changed, only the dielectric substrate 31 on which the matching circuit 22 whose configuration depends on the frequency needs to be replaced, and the yield is improved. The effect that can be obtained.
[0022]
Embodiment 5 FIG.
6 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 5 of the present invention. In the figure, 33 is a semiconductor substrate on which the matching circuit 22 and the dual gate FET 13 are mounted, and 34 is a semiconductor substrate on which the dual gate FET 11 is mounted. It is.
Since other configurations are the same as those in FIG.
[0023]
Next, the operation will be described.
The matching circuit 22 and the dual gate FET 13 are configured on the semiconductor substrate 33, while the dual gate FET 11 is configured on the semiconductor substrate 34.
[0024]
As described above, according to the fifth embodiment, the matching circuit 22 and the dual gate FET 13 are mounted on the semiconductor substrate 33, and the dual gate FET 11 is mounted on the semiconductor substrate 34. When the performance of the dual gate FET 11 is lowered, it is sufficient to replace only the semiconductor substrate 33 on which the dual gate FET 13 is mounted, and the effect of improving the yield can be obtained.
In the fifth embodiment, the matching circuit 22 and the dual gate FET 13 are mounted on the semiconductor substrate 33. However, the matching circuit 22 is mounted on the dielectric substrate, and only the dual gate FET 13 is mounted on the semiconductor substrate 33. In addition, an effect of improving the yield can be obtained.
[0025]
【The invention's effect】
As described above, according to the present invention, one matching circuit that inputs a carrier or a local oscillation wave and a carrier that passes through the matching circuit are input to the first gate of the first dual-gate FET and the baseband is input to the second gate. A transmission modulation circuit that inputs a signal and outputs a high-frequency signal obtained by mixing the carrier and baseband signals, and a local portion through which a high-frequency signal is input to the first gate of the second dual-gate FET and the matching circuit is input to the second gate Since it is configured to include a reception mixer circuit that inputs an oscillation wave and outputs an intermediate frequency signal obtained by mixing the high-frequency signal and the local oscillation wave, by using a common matching circuit for the carrier and the local oscillation wave, There is an effect that a small transmission / reception integrated circuit in which the transmission modulation circuit and the reception mixer circuit are integrated can be obtained.
[0026]
According to the present invention, one matching circuit that inputs a carrier or a local oscillation wave, a carrier through the matching circuit is input to the first gate of the triple gate FET, a baseband signal is input to the second gate, and the third gate is A transmission modulation circuit that outputs a high-frequency signal that is grounded at a high frequency and mixes the carrier and baseband signals, and a local oscillation wave that is input to the first gate of the dual-gate FET and a matching circuit is input to the second gate. And a receiving mixer circuit that outputs an intermediate frequency signal obtained by mixing the high-frequency signal and the local oscillation wave, so that the gain can be varied by the baseband signal applied to the second gate. Compared to the case using single gate FET and dual gate FET, the variable amount of gain is large. Isolation at carrier blocking increases, the effect can increase the degree of modulation can be obtained.
[0027]
According to the present invention, the transmission modulation circuit includes a first bias circuit connected to the high frequency signal output side of the transmission modulation circuit and a second bias circuit connected to the intermediate frequency signal output side of the reception mixer circuit. Since the bias of the second bias circuit is stopped at the time of the operation, and the bias of the first bias circuit is stopped at the time of the operation of the reception mixer circuit, the input impedance of the FET whose bias is stopped is high. Therefore, since the reactance component is mainly used, a carrier or a local oscillation wave can be efficiently input to the FET to be operated. Further, unnecessary current consumption can be prevented, and an effect of obtaining a transmission / reception integrated circuit with low current consumption can be obtained.
[Brief description of the drawings]
FIG. 1 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 1 of the present invention;
FIG. 2 is a circuit diagram showing a transmission / reception integrated circuit according to a second embodiment of the present invention.
FIG. 3 is an equivalent circuit diagram showing a transmission modulation circuit.
FIG. 4 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 3 of the present invention;
FIG. 5 is a circuit diagram showing a transmission / reception integrated circuit according to Embodiment 4 of the present invention;
FIG. 6 is a circuit diagram showing a transmission / reception integrated circuit according to a fifth embodiment of the present invention.
FIG. 7 is a circuit diagram showing a conventional transmission / reception integrated circuit.
[Explanation of symbols]
11 Dual gate FET (first dual gate FET: transmission modulation circuit), 13 Dual gate FET (second dual gate FET: reception mixer circuit), 22 Matching circuit, 23 Triple gate FET (transmission modulation circuit), 27 Bias Circuit (first bias circuit), 28 bias circuit (second bias circuit).

Claims (3)

One matching circuit that inputs a carrier or a local oscillation wave, a carrier that passes through the matching circuit is input to the first gate of the first dual-gate FET, and a baseband signal is input to the second gate. A transmission modulation circuit that outputs a high-frequency signal obtained by mixing a band signal, a high-frequency signal that is input to the first gate of the second dual gate FET, and a local oscillation wave that passes through the matching circuit is input to the second gate. A transmission / reception integrated circuit including a reception mixer circuit that outputs an intermediate frequency signal obtained by mixing a signal and a local oscillation wave. One matching circuit that inputs a carrier or a local oscillation wave, a carrier through the matching circuit is input to the first gate of the triple gate FET, a baseband signal is input to the second gate, and the third gate is grounded at high frequency A transmission modulation circuit that outputs a high-frequency signal obtained by mixing the carrier and baseband signals, a high-frequency signal that is input to the first gate of the dual gate FET, and a local oscillation wave that is input through the matching circuit to the second gate. A transmission / reception integrated circuit including a reception mixer circuit that outputs an intermediate frequency signal obtained by mixing the high-frequency signal and the local oscillation wave. A first bias circuit connected to the high frequency signal output side of the transmission modulation circuit, and a second bias circuit connected to the intermediate frequency signal output side of the reception mixer circuit; 3. The transmission / reception integrated circuit according to claim 1, wherein the bias of the second bias circuit is stopped and the bias of the first bias circuit is stopped when the reception mixer circuit is in operation. .

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