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JP3869613B2 - Substrate processing equipment - Google Patents
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JP3869613B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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Publication number
JP3869613B2
JP3869613B2 JP2000077944A JP2000077944A JP3869613B2 JP 3869613 B2 JP3869613 B2 JP 3869613B2 JP 2000077944 A JP2000077944 A JP 2000077944A JP 2000077944 A JP2000077944 A JP 2000077944A JP 3869613 B2 JP3869613 B2 JP 3869613B2
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JP
Japan
Prior art keywords
substrate
processing
liquid
organic stripping
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2000077944A
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Japanese (ja)
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JP2001259545A (en
Inventor
直嗣 前川
公二 長谷川
博章 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Priority to JP2000077944A priority Critical patent/JP3869613B2/en
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、半導体ウエハや液晶装置製造用のガラス基板などの電子部品製造用の基板を処理液に浸漬させる基板処理装置に関する。
【0002】
【従来の技術】
基板を処理液に浸漬させる基板処理方法として、例えば、基板上の不要な物を有機剥離液で除去するために、基板を有機剥離液に浸漬させる方法がある。
【0003】
【発明が解決しようとする課題】
かかる有機剥離液は、その組成によっては、基板表面と必ずしも馴染みやすいとは限らず、基板上の不要物を除去しきれないことや、処理が不均一となることがある。このような不具合は、特に、アスペクト比の大きい近年の基板においては、益々頻繁に生じる傾向にある。
【0004】
このような不具合は、例えば、基板表面にて、開口面積が狭く奥が深い開口部等などが所在する部位では、有機剥離液に基板を浸漬させても、そのような開口の中には有機剥離液が侵入できず、基板表面に付着している基板上の不要な物が有機剥離液と接触できないことが原因となって起こると推定される。このような場合、基板は有機剥離液に浸漬していても、開口部の内部は、有機剥離液が基板表面と必ずしも馴染みやすいとは限らないことも相まって、気泡が詰まったような状態にあると推定される。
【0005】
本発明は、このような事情に鑑みてなされたものであって、基板を処理液に浸漬させる場合に、アスペクト比の大きい基板であっても、基板表面の全域に対して、安定して均一に浸漬処理することができる基板処理装置を提供することを目的とする。
【0006】
【課題を解決するための手段】
【0007】
本発明は、このような目的を達成するために、次のような構成をとる。
【0008】
【0009】
すなわち、請求項1に記載の発明は、基板を処理液に浸漬させて処理する基板処理装置において、処理液を貯留し、その処理液中に基板が浸漬される処理槽と、前記処理槽の上方に基板を待機させる空間を有して前記処理槽を囲うチャンバーと、前記チャンバー内へ基板を出し入れする開口を開閉自在に閉じる蓋体と、前記チャンバー内において基板を、前記処理槽に貯留されている処理液の液面より上方の引き上げ位置と、前記処理槽に貯留されている処理液の液面より下方の浸漬位置との間で昇降させる基板昇降手段と、前記処理槽に貯留されている処理液の液面へガスを吹き付けて処理液の蒸発を促進させ、処理槽上方の、基板を待機させる前記空間に、前記処理液の少なくとも一部の成分を含み基板より高温の状態の蒸気を生成させる蒸発促進ノズルとを備えることを特徴とする。
【0010】
【発明の実施の形態】
次に、本発明の実施形態を図面を用いて詳細に説明する。
【0011】
図1は、本発明に係る実施形態の基板処理装置を示す縦断正面図、図2は縦断側面図である。これらの図において、1はチャンバーを示し、このチャンバー1内の下方に処理槽2が設けられている。処理槽2は、その上部の周囲にオーバーフロー槽4を付設して構成されている。
【0012】
処理槽2の上部に近い位置に、窒素ガス等を処理液、例えば有機剥離液の液面に向けて吹き付けて液面からの蒸発を促進するパイプ状の蒸発促進ノズル5が設けられている。
【0013】
なお、有機剥離液としては、1−メチル−2ピロリドン、テトラヒドロチオフェン1.1−ジオキシド、イソプロパノールアミン、ジメチルスルホシキド、モノエタノールアミン、2−(2アミノエトキシ)エタノール、ヒドロキシアミン、カテコール、N−メチルピロリドン、アロマテイックジオール、パーフレン、フェノールを主成分とする薬液が使用される。
【0014】
より具体的な例としては、1−メチル−2ピロリドンとテトラヒドロチオフェン1.1−ジオキシドとイソプロパノールアミンとの混合液(第1例)とか、ジメチルスルホシキドとモノエタノールアミンとの混合液(第2例)とか、2−(2アミノエトキシ)エタノールとヒドロキシアミンとカテコールとの混合液(第3例)とか、2−(2アミノエトキシ)エタノールとN−メチルピロリドンとの混合液(第4例)とか、モノエタノールアミンと水とアロマテイックジオールとの混合液(第5例)とか、パーフレンとフェノールとの混合液(第6例)とかが挙げられる。
【0015】
チャンバー1には、最上部箇所に、チャンバー1へ基板を出し入れする開口を開閉自在に閉じる蓋体である上部シャッター7が設けられ、チャンバー1の上下方向中間である蒸発促進ノズル5近くの上方箇所に中間シャッター8が設けられている。そして、両シャッター7、8を双方とも閉じることにより、それらの間にて、乾燥ゾーンが形成されるように構成されている。
【0016】
その乾燥ゾーン内において、チャンバー1の側壁に、加熱装置としてのパネルヒータ9と、イソプロピルアルコール蒸気を供給する蒸気供給ノズル10とが設けられている。図示しないが、蒸気供給ノズル10は、イソプロピルアルコールの蒸気供給源に接続されている。
【0017】
チャンバー1の上方箇所、すなわち、処理槽2に有機剥離液を貯留した状態における有機剥離液の液面より上方の引き上げ位置と、処理槽2内、すなわち、有機剥離液の液面より下方の浸漬位置との間で昇降可能に、多数の基板Wを立姿勢で水平方向に所定間隔を隔てて保持する基板リフター11が設けられている。この基板リフター11と、チャンバー1外に設けられた昇降装置12とが、鉛直方向に摺動可能にチャンバー1に設けられたリフトロッド13を介して連動連結され、基板リフター11を駆動昇降するように構成されている。
【0018】
次に、上記実施形態の基板処理装置による有機剥離液への浸漬処理について説明する。
【0019】
先ず、図3の概略構成図に示すように、基板リフター11(図1参照)に基板Wを保持しておいて、基板Wをチャンバー1内の引き上げ位置、すなわち、処理槽2の上方に待機させる。この状態で、処理槽2内には有機剥離液が貯留されており、処理槽2からは有機剥離液の蒸気が発生している。処理槽2はチャンバー1に囲われているので、チャンバー1の内部には、有機剥離液の蒸気が高濃度に漂っており、前記引き上げ位置にて基板Wは、高濃度の有機剥離液の蒸気にさらされた状態にある。
【0020】
処理槽2に貯留されている有機剥離液の温度は、基板より高温である。通常、基板は、前工程の処理装置からクリーンルーム内を運ばれてくる間に、室温と同じ温度になっており、有機剥離液は、室温より高温になっている。
【0021】
なお、基板より高温である有機剥離液の温度は、処理槽2に貯留されている有機剥離液から蒸発する有機剥離液の蒸気が基板に触れて結露するような温度であればよく、基板の温度との間に10℃以上の温度差があれば充分である。また、基板を予め冷却しておけば、有機剥離液は低い温度でも結露するので、有機剥離液の温度を必ずしも室温より高くする必要はない。
【0022】
なお、処理槽2から有機剥離液が蒸発するのを促進するために、蒸発促進ノズル5から高温の窒素ガス等の適宜ガスを、有機剥離液の液面へ向けて吹き付けてもよい。
【0023】
また、基板表面に蒸気が効率的に供給されるように、チャンバー1の外部で有機剥離液の蒸気を高濃度に生成しておいて、蒸気供給ノズル10より積極的に蒸気供給してもよい。
【0024】
そのように蒸気供給ノズル10より有機剥離液の蒸気を供給する場合には、中間シャッター8を閉じておいて、基板周囲の空間を狭くしておき、高濃度の有機剥離液の蒸気が基板に提供されるようにすることが望ましい。
【0025】
前記した蒸気を、基板表面に接触させると、蒸気は気体であるため、液体よりもはるかに流動性に富み、分子運動も活発でああるから、基板表面の微小開口部の奥や段差部などに容易に侵入し、その内部で結露する。
【0026】
引き続き、図1中に基板および基板リフター11を実線で示すように、基板リフター11を浸漬位置まで降下させて、基板Wを、処理槽2に貯留されている有機剥離液に浸漬させる。これにより、基板W上に付着した不要な膜等の汚染物質が洗浄除去される。
【0027】
この際、基板表面には、基板表面の微小開口部の内部にまで有機剥離液が僅かな量ではあるが確実に付着しているので、浸漬時に基板表面全域が有機剥離液と確実に触れ、基板W上に付着した不要な膜等の汚染物質を均一に洗浄除去することができる。
【0028】
この後、上部シャッター7を開け、昇降装置12を駆動して、基板リフター11を上部シャッター7より上方へ引き上げ、基板Wをチャンバー1外へ搬出し、図示しない別の装置にて基板を洗浄する。
【0029】
上記実施形態では、多数枚の基板Wを処理するように構成しているが、本発明は基板Wを1枚づつ処理する場合にも適用できる。
【0030】
また、上記実施形態では、有機剥離液に基板を浸漬させる処理であるが、その他にも、本発明は、基板を浸漬させる処理液として、例えば基板をエッチングする各種薬液や、基板表面を化学洗浄する洗浄薬液等のように、各種の液に適用でき、基板を浸漬させる処理液は、上記実施形態の有機剥離液に限定されるものではない。
【0031】
また、上記実施形態では、基板を有機剥離液に浸漬させる前に、有機剥離液そのものの蒸気に基板を接触させたが、有機剥離液に浸漬させる前に基板に接触させる蒸気は、必ずしも有機剥離液を構成する全成分を含む蒸気である必要はなく、例えば、有機剥離液の溶剤成分などのように有機剥離液を構成する一部の成分の蒸気でもよい。
【0032】
【発明の効果】
以上の説明から明らかなように、請求項1に記載の基板処理装置においては、処理槽に貯留された処理液に基板を浸漬させる前に、基板昇降手段によって基板を処理液の液面より上方の引き上げ位置の空間に待機させ、そのときに、基板が待機している空間および処理槽はチャンバーで囲われているので、基板は処理液の蒸気と接触し、その後、基板昇降手段を降下することで基板を処理液に浸漬させることができる。したがって、基板を処理液に浸漬させる前に、基板を浸漬させる処理液の少なくとも一部の成分を含む蒸気が基板表面に結露し、かかる結露に際しては、蒸気は気体であるため、液体よりもはるかに流動性に富み、分子運動も活発であるから、基板表面の微小開口部の奥や段差部などに容易に侵入し、基板表面を僅かな量ではあるが確実に覆う。このため、基板を処理液に浸漬させると、アスペクト比の大きい基板であっても、微小開口部の内部や段差部なども含めて処理液と確実に接触させることができ、基板表面の全域に対して、安定して均一に浸漬処理することができる。そして、この基板処理装置は、処理槽から蒸発する蒸気を逃がさず有効に活用して、基板を引き上げ位置から浸漬位置へ降下する簡便な動作で、しかも処理槽の上方空間を有効利用したコンパクトな構造により、上記効果を奏することができる。
【図面の簡単な説明】
【図1】 本発明に係る実施形態の基板処理装置を示す縦断正面図である。
【図2】 図1の縦断側面図である。
【図3】 基板処理装置での基板処理の説明に供する概略構成図である。
【符号の説明】
2…処理槽
4…オーバーフロー槽
5…蒸発促進ノズル
7…上部シャッター
8…中間シャッター
10…蒸気供給ノズル
11…基板リフター
W…基板
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a board processing unit Ru is immersed in the treatment liquid substrates for electronic components manufacture of a glass substrate of a semiconductor wafer or a liquid crystal device for the production.
[0002]
[Prior art]
As a substrate processing method for immersing the substrate in the processing solution, for example, there is a method of immersing the substrate in the organic stripping solution in order to remove unnecessary matter on the substrate with the organic stripping solution.
[0003]
[Problems to be solved by the invention]
Depending on the composition of such an organic stripping solution, it is not always easy to become familiar with the substrate surface, and it may not be possible to remove unnecessary materials on the substrate, and the processing may be uneven. Such a defect tends to occur more frequently, particularly in recent substrates with a large aspect ratio.
[0004]
Such a defect is caused by, for example, a portion of the substrate surface where the opening area is small and the depth is deep, even if the substrate is immersed in an organic stripping solution, It is presumed that the peeling liquid cannot enter, and unnecessary substances on the substrate adhering to the substrate surface cannot be brought into contact with the organic peeling liquid. In such a case, even if the substrate is immersed in the organic stripping solution, the inside of the opening is in a state where air bubbles are clogged in combination with the fact that the organic stripping solution is not necessarily familiar with the substrate surface. It is estimated to be.
[0005]
The present invention has been made in view of such circumstances, and when the substrate is immersed in a processing solution, even if the substrate has a large aspect ratio, it is stable and uniform over the entire surface of the substrate. and to provide an immersion board processor that Ru can be made.
[0006]
[Means for Solving the Problems]
[0007]
In order to achieve such an object, the present invention has the following configuration.
[0008]
[0009]
That is, the invention according to claim 1 is a substrate processing apparatus for processing a substrate by immersing the substrate in a processing solution, storing a processing solution and immersing the substrate in the processing solution; and A chamber surrounding the processing tank with a space for waiting for the substrate above, a lid for opening and closing the substrate into and out of the chamber, and a substrate in the chamber are stored in the processing tank. A substrate lifting and lowering means for moving up and down between a pulling position above the liquid level of the processing liquid and a dipping position below the liquid level of the processing liquid stored in the processing tank; Vapor is blown to the surface of the processing liquid to promote evaporation of the processing liquid, and the space above the processing tank in which the substrate stands by contains at least a part of the processing liquid and is at a higher temperature than the substrate Generate Characterized in that it comprises a vaporization accelerator nozzle.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described in detail with reference to the drawings.
[0011]
FIG. 1 is a longitudinal front view showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a longitudinal side view. In these drawings, reference numeral 1 denotes a chamber, and a processing tank 2 is provided below the chamber 1. The processing tank 2 is configured by adding an overflow tank 4 around the upper part thereof.
[0012]
A pipe-like evaporation promoting nozzle 5 is provided at a position close to the upper portion of the treatment tank 2 to blow nitrogen gas or the like toward the liquid surface of the treatment liquid, for example, the organic stripping liquid, to promote evaporation from the liquid surface.
[0013]
In addition, as an organic stripping solution, 1-methyl-2pyrrolidone, tetrahydrothiophene 1.1-dioxide, isopropanolamine, dimethylsulfoxide, monoethanolamine, 2- (2aminoethoxy) ethanol, hydroxyamine, catechol, N -Chemicals based on methylpyrrolidone, aromatic diol, perfrene and phenol are used.
[0014]
More specific examples include a mixed liquid of 1-methyl-2pyrrolidone, tetrahydrothiophene 1.1-dioxide and isopropanolamine (first example), or a mixed liquid of dimethylsulfoxide and monoethanolamine (first 2 examples), a mixed solution of 2- (2aminoethoxy) ethanol, hydroxyamine and catechol (third example), or a mixed solution of 2- (2 aminoethoxy) ethanol and N-methylpyrrolidone (fourth example). ), A mixed solution of monoethanolamine, water, and an aromatic diol (fifth example), or a mixed solution of perfrene and phenol (sixth example).
[0015]
The chamber 1 is provided with an upper shutter 7, which is a lid that opens and closes an opening for taking a substrate into and out of the chamber 1 at the uppermost position, and is located at an upper position near the evaporation promoting nozzle 5 in the middle in the vertical direction of the chamber 1. An intermediate shutter 8 is provided. Then, both the shutters 7 and 8 are closed so that a drying zone is formed between them.
[0016]
In the drying zone, a panel heater 9 as a heating device and a vapor supply nozzle 10 for supplying isopropyl alcohol vapor are provided on the side wall of the chamber 1. Although not shown, the steam supply nozzle 10 is connected to a steam supply source of isopropyl alcohol.
[0017]
In the upper part of the chamber 1, that is, in the state where the organic stripping solution is stored in the processing tank 2, the lifting position above the liquid level of the organic stripping liquid, and in the processing tank 2, that is, the immersion below the liquid level of the organic stripping liquid A substrate lifter 11 that holds a large number of substrates W in a standing posture in a horizontal direction at a predetermined interval is provided so as to be movable up and down between the positions. The substrate lifter 11 and an elevating device 12 provided outside the chamber 1 are connected to each other via a lift rod 13 provided in the chamber 1 so as to be slidable in the vertical direction so that the substrate lifter 11 is driven up and down. It is configured.
[0018]
Next, the immersion process in the organic stripping solution by the substrate processing apparatus of the above embodiment will be described.
[0019]
First, as shown in the schematic configuration diagram of FIG. 3, the substrate W is held on the substrate lifter 11 (see FIG. 1), and the substrate W is put on standby in the lifting position in the chamber 1, that is, above the processing tank 2. Let In this state, the organic stripping solution is stored in the processing tank 2, and vapor of the organic stripping liquid is generated from the processing tank 2. Since the processing tank 2 is surrounded by the chamber 1, the vapor of the organic stripping solution drifts in the chamber 1 at a high concentration. At the pulling position, the substrate W is vaporized of the high concentration organic stripping solution. It is in the state exposed to.
[0020]
The temperature of the organic stripping solution stored in the processing tank 2 is higher than that of the substrate. Normally, the substrate is at the same temperature as the room temperature while being transported from the processing apparatus in the previous process into the clean room, and the organic stripping solution is higher than the room temperature.
[0021]
The temperature of the organic stripping solution that is higher than the substrate may be a temperature at which the vapor of the organic stripping solution evaporating from the organic stripping solution stored in the processing tank 2 is in contact with the substrate and is condensed. It is sufficient if there is a temperature difference of 10 ° C. or more between the temperature. In addition, if the substrate is cooled in advance, the organic stripping solution is condensed even at a low temperature. Therefore, the temperature of the organic stripping solution does not necessarily need to be higher than room temperature.
[0022]
In order to promote the evaporation of the organic stripping solution from the treatment tank 2, an appropriate gas such as high-temperature nitrogen gas may be sprayed from the evaporation promoting nozzle 5 toward the surface of the organic stripping solution.
[0023]
Further, the vapor of the organic stripping solution may be generated at a high concentration outside the chamber 1 so that the vapor is efficiently supplied to the substrate surface, and the vapor may be positively supplied from the vapor supply nozzle 10. .
[0024]
When supplying the vapor of the organic stripping solution from the steam supply nozzle 10 in this way, the intermediate shutter 8 is closed, the space around the substrate is narrowed, and the vapor of the high concentration organic stripping solution is applied to the substrate. It is desirable to be provided.
[0025]
When the above-mentioned vapor is brought into contact with the substrate surface, since the vapor is a gas, it is much more fluid than a liquid and has an active molecular motion. Easily penetrates and forms dew inside.
[0026]
Subsequently, as shown by the solid line in FIG. 1, the substrate lifter 11 is lowered to the immersion position, and the substrate W is immersed in the organic stripping solution stored in the processing tank 2. Thereby, contaminants such as unnecessary films attached on the substrate W are washed away.
[0027]
At this time, since the organic stripping solution is securely attached to the substrate surface to the inside of the microscopic openings on the substrate surface, the entire substrate surface is reliably in contact with the organic stripping solution when immersed, Contaminants such as unnecessary films attached on the substrate W can be uniformly washed away.
[0028]
Thereafter, the upper shutter 7 is opened, the lifting device 12 is driven, the substrate lifter 11 is pulled upward from the upper shutter 7, the substrate W is carried out of the chamber 1, and the substrate is cleaned by another device (not shown). .
[0029]
In the above embodiment, a large number of substrates W are processed. However, the present invention can also be applied to the case where the substrates W are processed one by one.
[0030]
Moreover, in the said embodiment, although it is the process which immerses a board | substrate in organic peeling liquid, in addition to this, as this process liquid which immerses a board | substrate, for example, various chemical | medical solutions which etch a board | substrate, and chemical cleaning of the substrate surface The treatment liquid that can be applied to various liquids such as a cleaning chemical liquid to be immersed in the substrate is not limited to the organic stripping liquid of the above embodiment.
[0031]
In the above embodiment, the substrate is brought into contact with the vapor of the organic stripping solution itself before the substrate is immersed in the organic stripping solution. However, the vapor that is brought into contact with the substrate before being immersed in the organic stripping solution is not necessarily organic stripping. It is not necessary for the vapor to contain all the components that make up the liquid. For example, it may be the vapor of some of the components that make up the organic stripping solution such as the solvent component of the organic stripping solution.
[0032]
【The invention's effect】
As is apparent from the above description, in the substrate processing apparatus according to claim 1, before the substrate is immersed in the processing liquid stored in the processing tank, the substrate is moved above the liquid level of the processing liquid by the substrate lifting / lowering means. The space where the substrate is waiting and the processing tank are surrounded by the chamber, so that the substrate comes into contact with the vapor of the processing liquid, and then the substrate lifting means is lowered. Thus, the substrate can be immersed in the processing liquid. Therefore, before the substrate is immersed in the treatment liquid, vapor containing at least a part of the treatment liquid in which the substrate is immersed is condensed on the surface of the substrate. Because of its high fluidity and active molecular motion, it easily penetrates into the back of a microscopic opening or a stepped portion on the surface of the substrate and covers the surface of the substrate with a small amount without fail. For this reason, when the substrate is immersed in the processing solution, even a substrate having a large aspect ratio can be reliably brought into contact with the processing solution, including the inside of the minute opening and the stepped portion, over the entire surface of the substrate. On the other hand, the immersion treatment can be performed stably and uniformly. And this substrate processing apparatus is a compact operation that makes effective use of the vapor evaporating from the processing tank without escaping, and is a simple operation for lowering the substrate from the pulling position to the dipping position, and effectively utilizing the space above the processing tank. The above effects can be achieved by the structure.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional front view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a longitudinal side view of FIG. 1. FIG.
FIG. 3 is a schematic configuration diagram for explaining the substrate processing in the substrate processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 2 ... Processing tank 4 ... Overflow tank 5 ... Evaporation promotion nozzle 7 ... Upper shutter 8 ... Intermediate shutter 10 ... Steam supply nozzle 11 ... Substrate lifter W ... Substrate

Claims (1)

基板を処理液に浸漬させて処理する基板処理装置において、
処理液を貯留し、その処理液中に基板が浸漬される処理槽と、
前記処理槽の上方に基板を待機させる空間を有して前記処理槽を囲うチャンバーと、
前記チャンバー内へ基板を出し入れする開口を開閉自在に閉じる蓋体と、
前記チャンバー内において基板を、前記処理槽に貯留されている処理液の液面より上方の引き上げ位置と、前記処理槽に貯留されている処理液の液面より下方の浸漬位置との間で昇降させる基板昇降手段と、
前記処理槽に貯留されている処理液の液面へガスを吹き付けて処理液の蒸発を促進させ、処理槽上方の、基板を待機させる前記空間に、前記処理液の少なくとも一部の成分を含み基板より高温の状態の蒸気を生成させる蒸発促進ノズルと、
を備えることを特徴とする基板処理装置
In a substrate processing apparatus for processing by immersing a substrate in a processing solution,
A treatment tank in which the treatment liquid is stored, and the substrate is immersed in the treatment liquid;
A chamber surrounding the processing tank with a space for waiting for the substrate above the processing tank;
A lid for freely opening and closing an opening for taking the substrate into and out of the chamber;
In the chamber, the substrate is moved up and down between a pulling position above the liquid level of the processing liquid stored in the processing tank and an immersion position below the liquid level of the processing liquid stored in the processing tank. Substrate lifting and lowering means,
A gas is blown to the liquid level of the processing liquid stored in the processing tank to promote the evaporation of the processing liquid, and the space above the processing tank that waits for the substrate includes at least a part of the processing liquid. An evaporation promoting nozzle that generates steam at a higher temperature than the substrate;
A substrate processing apparatus, characterized in that it comprises a.
JP2000077944A 2000-03-21 2000-03-21 Substrate processing equipment Expired - Fee Related JP3869613B2 (en)

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JP3869613B2 true JP3869613B2 (en) 2007-01-17

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