JP3880211B2 - Resin composition for sealing and semiconductor device - Google Patents
Resin composition for sealing and semiconductor device Download PDFInfo
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- JP3880211B2 JP3880211B2 JP22371998A JP22371998A JP3880211B2 JP 3880211 B2 JP3880211 B2 JP 3880211B2 JP 22371998 A JP22371998 A JP 22371998A JP 22371998 A JP22371998 A JP 22371998A JP 3880211 B2 JP3880211 B2 JP 3880211B2
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- 239000011342 resin composition Substances 0.000 title claims description 34
- 238000007789 sealing Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000002245 particle Substances 0.000 claims description 37
- 239000000945 filler Substances 0.000 claims description 35
- 239000003822 epoxy resin Substances 0.000 claims description 23
- 229920000647 polyepoxide Polymers 0.000 claims description 23
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000011256 inorganic filler Substances 0.000 claims description 21
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 21
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 239000012778 molding material Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【０００１】
【発明の属する技術分野】
本発明は、半導体等の電子部品の封止をする封止用樹脂組成物およびそれにより樹脂封止した半導体装置に関する。更に詳しくは、該樹脂組成物と半導体装置の樹脂パッケージは、粒径の異なる2 充填剤、無機質充填剤と酸化チタン充填剤とによって充填された熱硬化性樹脂を主成分し、熱伝導性に優れ、成形加工工程での装置の磨耗が少ないという利点がある。
【０００２】
【従来の技術】
半導体等の電子部品は、それを外部環境から保護するためにセラミックパッケージまたは樹脂パッケージ等で封止されているが、この封止材料については、コスト、生産性等の面から無機質充填剤を含有させた熱硬化性樹脂組成物によるものが普及している。
【０００３】
従来、この封止用の樹脂組成物は、エポキシ樹脂などの熱硬化性樹脂とシリカ等の無機充填剤とから構成されており、トランスファー成形法によって電子部品の封止がされるが、これらの樹脂組成物は、熱膨張係数が小さくて内部応力が少なくて、良熱伝導性、低透湿性で機械的特性などに優れ、しかも低コストであるものが望ましい。
【０００４】
【発明が解決しようとする課題】
しかしながら、充填剤として、シリカ、アルミナ、窒化ケイ素粉末などを用いた樹脂組成物は、樹脂パッケージとしたときの熱伝導性に優れている反面、成形加工工程での装置の磨耗が大きく、また、充填剤粒子が半導体素子表面を傷つけ、そのことがソフトエラーを引き起こす原因となるとの報告も出されている。
【０００５】
この他、充填剤として炭酸カリウム、硫酸バリウム、マイカ粉末等を用いた樹脂組成物は、成形加工工程での装置の磨耗が小さい反面、熱伝導性や作業性に劣っている。
【０００６】
本発明の目的は、充填性や作業性がよく、成形加工工程での装置の摩耗も少なく、かつ熱伝導性が高くて内部応力が小さく、トランスファー成形に適した熱硬化性の封止用樹脂組成物とそれにより樹脂封止した半導体装置とを提供しようとするものである。
【０００７】
【課題を解決するための手段】
本発明者らは、上記の目的を達成しようと鋭意研究を重ねた結果、粒径の大きい無機質充填剤と粒径の小さい酸化チタン充填剤の組合せが、充填剤としてより優れた特性をもつことを知り、それを用いた後述する組成の封止用樹脂組成物と樹脂封止型半導体装置が、上記の目的を達成できることを見いだし、本発明を完成したものである。
【０００８】
即ち、本発明は、（Ａ）最大粒子径が３００μｍ以下で平均粒子径が５μｍ以上７０μｍ以下の窒化ケイ素、アルミナ、窒化アルミのいずれか、又はこれらの２種以上の混合物である無機質充填剤、（Ｂ）最大粒子径が５μｍ以下で平均粒子径が０．０５μｍ以上１μｍ以下である酸化チタン充填剤および（Ｃ）エポキシ樹脂を必須成分とし、樹脂組成物全体に対して、（Ａ）の無機質充填剤を３０〜９０重量％、（Ｂ）の酸化チタン充填剤を５〜５０重量％、（Ｃ）エポキシ樹脂を５〜５０重量％、それぞれ含有してなることを特徴とする封止用樹脂組成物であり、また、この封止用樹脂組成物の硬化物によって、半導体チップが樹脂封止されてなることを特徴とする半導体装置である。
【０００９】
以下、本発明を詳細に説明する。
【００１０】
本発明の封止用樹脂組成物は、エポキシ樹脂に、粒径の異なる無機質充填剤と酸化チタン充填剤とを配合させたものである。
【００１１】
本発明に用いる（Ａ）の無機質充填剤は、封止用樹脂組成物に使用される、不純物の少ない無機質充填剤が好ましく、熱伝導性、熱膨張係数の見地から、窒化ケイ素、アルミナ、窒化アルミのいずれか、またはこれらの２種以上の混合物である。この無機質充填剤は、最大粒子径が３００μｍ以下で平均粒子径が５μｍ以上７０μｍ以下のものである。また、この無機質充填剤の配合量であるが、全体の樹脂組成物に対して３０〜９０重量％である。
【００１２】
本発明に用いる（Ｂ）の酸化チタン充填剤としては、最大粒子径が5 μｍ以下で平均粒子径が0.05μｍ以上1 μｍ以下のものである。平均粒子径が0.05μｍ以上1 μｍ以下の（Ｂ）酸化チタン充填剤は、従来白色顔料に使用されてきた粒子径のものである。また、この酸化チタン充填剤の配合量であるが、全体の樹脂組成物に対して5 〜50重量％である。そのような配合量であれば、無機質充填剤の装置摩耗を低減させることができ、また成形材料としての充填性を高めて熱伝導性をも高くすることができる。
【００１３】
本発明の樹脂組成物は、上述した（Ａ）無機質充填剤および（Ｂ）酸化チタン充填剤を（Ｃ）エポキシ樹脂に配合させたものである。
【００１４】
エポキシ樹脂は熱硬化性樹脂の中でも工業的に有利に用いることができるものである。
【００１５】
本発明の封止用樹脂組成物は、上述した（Ａ）の無機質充填剤および（Ｂ）の酸化チタン充填剤と（Ｃ）エポキシ樹脂とを主成分とするが、本発明の目的に反しない限り、また必要に応じて、粘度調整用の溶剤、カップリング剤、その他の添加剤を配合することができる。その溶剤としては、ジオキサン、ヘキサン、ベンゼン、トルエン、ソルベントナフサ、工業用ガソリン、酢酸セロソルブ、ブチルセロソルブアセテート、ブチルカルビトールアセテート、ジメチルホルムアミド、ジメチルアセトアミド、Ｎ−メチルピロリドン等が挙げられ、これらは単独又は2 種以上混合して使用することができる。
【００１６】
本発明の封止用樹脂組成物を成形材料として調製する場合の一般的方法は、前述した（Ａ）の無機質充填剤、（Ｂ）の酸化チタン充填剤、エポキシ樹脂とその硬化剤などの（Ｃ）エポキシ樹脂、それに溶剤、カップリング剤、その他の添加剤を配合し、ニーダ、ロールミル、ミキサーなどを用いて常法により加熱混練を行い、次いで適当な大きさに粉砕して成形材料とすることができる。
【００１７】
また、本発明の半導体装置は、上述の成形材料を用いて半導体チップを封止することにより容易に製造することができる。封止を行う半導体チップとしては、例えば集積回路、大規模集積回路、トランジスタ、サイリスタ、ダイオード等で特に限定されるものではない。封止の最も一般的な方法としては、低圧トランスファー成形法があるが、射出成形、圧縮成形、注形等による封止も可能である。成形材料で封止後加熱して硬化させ、最終的にはこの硬化物によって封止された半導体装置が得られる。加熱による硬化は、150 ℃以上に加熱して硬化させることが望ましい。
【００１８】
【作用】
本発明において粒径の異なる無機質充填剤および酸化チタン充填剤と、エポキシ樹脂とを特定量配合することによって、本発明の封止用樹脂組成物が得られる。この樹脂組成物を使用することにより、充填性や作業性がよく、成形加工工程での装置の摩耗も少なくなり、かつトランスファー成形等をすることにより内部応力の小さい半導体装置を獲ることができる。
【００１９】
【発明の実施の形態】
以下、本発明を実施例によって説明するが、本発明はこれらの実施例によって限定されるものではない。
【００２０】
参考例１
（Ａ）無機質充填剤として最大粒子径が１２０μｍ以下で平均粒子径が２５μｍである結晶性シリカ充填剤と、最大粒子径が１μｍで平均粒子径が０．２μｍである（Ｂ）酸化チタン充填剤と、（Ｃ）エポキシ樹脂を表１に示す割合で配合し、ロールミルにて混練後冷却、粉砕し、エポキシ樹脂組成物１、２を得た。
【００２１】
実施例１
同様に、最大粒子径が９０μｍ以下で平均粒子径が２５μｍであるアルミナ充填剤と実施例１で用いた最大粒子径が１μｍで平均粒子径が０．２μｍである酸化チタン充填剤と、エポキシ樹脂を表１に示す割合で配合し、ロールミルにて混練後冷却、粉砕し、エポキシ樹脂組成物３、４を得た。
【００２２】
実施例２
同様に、最大粒子径が１５０μｍ以下で平均粒子径が３０μｍである窒化ケイ素充填剤と実施例１で用いた最大粒子径が１μｍで平均粒子径が０．２μｍである酸化チタン充填剤と、エポキシ樹脂を表２に示す割合で配合し、ロールミルにて混練後冷却、粉砕し、エポキシ樹脂組成物５、６を得た。
【００２３】
比較例１
同様に、参考例１で用いた結晶性シリカ充填剤、実施例１で用いたアルミナ充填剤、実施例２で用いた窒化ケイ素充填剤および参考例１で用いた酸化チタン充填剤と、エポキシ樹脂を表２〜３に示す割合で配合し、ロールミルにて混練後冷却、粉砕し、エポキシ樹脂組成物７〜１０を得た。
【００２４】
前記参考例１、実施例１、２および比較例１で作成したエポキシ樹脂組成物の流動性をみるため、高化式フロー粘度およびスパイラルフロー、熱伝導率、磨耗性等を測定してこの結果を表１〜３にそれぞれ示した。
【００２５】
参考例１、実施例１、２の樹脂組成物（樹脂組成物番号１〜６）が比較例１の樹脂組成物（樹脂組成物番号７〜１０）より流動性に優れ、また、フィラーを高充填しても樹脂組成物粘度が低く、成形性および作業性に優れていた。また、同系統のフィラーを使用したサンプルを比較すると、参考例１、実施例１、２の樹脂組成物（樹脂組成物番号１〜６）が比較例１の樹脂組成物（樹脂組成物番号７〜１０）より熱伝導性に優れ磨耗が少なかった。上述のように、本発明の効果が確認された。
【００２６】
【表１】
＊２ ：１７５℃、荷重１０ｋｇ（島津フローテスターＣＦＴ−５００型）。
＊３ ：１７５℃×２分硬化、ＥＭＭＩ規格１−６６に準じる。
＊４ ：１７５℃×５分硬化、迅速熱伝導率計ＱＴＭ−ＭＤ２型。
＊５ ：１７５℃、荷重５０ｋｇ（島津フローテスターＣＦＴ−５００型）、アルミニウム製ダイ（穴径φ１ｍｍ）の１０ショット後の穴径。
【００２７】
【表２】
＊２ ：１７５℃、荷重１０ｋｇ（島津フローテスターＣＦＴ−５００型）。
＊３ ：１７５℃×２分硬化、ＥＭＭＩ規格１−６６に準じる。
＊４ ：１７５℃×５分硬化、迅速熱伝導率計ＱＴＭ−ＭＤ２型。
＊５ ：１７５℃、荷重５０ｋｇ（島津フローテスターＣＦＴ−５００型）、アルミニウム製ダイ（穴径φ１ｍｍ）の１０ショット後の穴径。
【００２８】
【表３】
【発明の効果】
本発明の粒径の異なる無機質充填剤と酸化チタン充填剤とを含有する熱硬化性樹脂組成物を半導体等の電子部品の封止に用いることにより、トランスファー成形工程における流動性、摩耗性が改善されるうえ、熱伝導性にも優れ、作業性、特性の両面で改善をはかることができる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sealing resin composition for sealing an electronic component such as a semiconductor and a semiconductor device resin-sealed thereby. In more detail, the resin composition and the resin package of the semiconductor device are mainly composed of a thermosetting resin filled with two fillers having different particle diameters, an inorganic filler and a titanium oxide filler, and are made thermally conductive. There is an advantage that it is excellent and wear of the apparatus in the molding process is small.
[0002]
[Prior art]
Electronic parts such as semiconductors are sealed with a ceramic package or resin package to protect them from the external environment. This sealing material contains an inorganic filler from the viewpoint of cost, productivity, etc. The thing with the made thermosetting resin composition is prevailing.
[0003]
Conventionally, this sealing resin composition is composed of a thermosetting resin such as an epoxy resin and an inorganic filler such as silica, and electronic components are sealed by a transfer molding method. It is desirable that the resin composition has a low coefficient of thermal expansion, a low internal stress, good thermal conductivity, low moisture permeability, excellent mechanical properties, etc., and low cost.
[0004]
[Problems to be solved by the invention]
However, the resin composition using silica, alumina, silicon nitride powder or the like as a filler is excellent in thermal conductivity when used as a resin package, but has a large amount of equipment wear in the molding process, It has also been reported that filler particles can damage the surface of a semiconductor device and cause a soft error.
[0005]
In addition, a resin composition using potassium carbonate, barium sulfate, mica powder, or the like as a filler is inferior in thermal conductivity and workability while having little wear on the apparatus in the molding process.
[0006]
The object of the present invention is a thermosetting sealing resin suitable for transfer molding, which has good fillability and workability, less wear of the apparatus in the molding process, high thermal conductivity and low internal stress. An object of the present invention is to provide a composition and a semiconductor device encapsulated with a resin.
[0007]
[Means for Solving the Problems]
As a result of intensive research aimed at achieving the above object, the present inventors have found that the combination of a large particle size inorganic filler and a small particle size titanium oxide filler has more excellent properties as a filler. As a result, the present inventors have found that a sealing resin composition and a resin-sealed semiconductor device having the composition described later using the same can achieve the above-described object, and have completed the present invention.
[0008]
That is, the present invention provides (A) an inorganic filler that is any one of silicon nitride, alumina, aluminum nitride having a maximum particle size of 300 μm or less and an average particle size of 5 μm to 70 μm, or a mixture of two or more thereof. (B) A titanium oxide filler having a maximum particle size of 5 μm or less and an average particle size of 0.05 μm or more and 1 μm or less and (C) an epoxy resin as essential components, and the inorganic composition of (A) with respect to the entire resin composition A sealing resin comprising 30 to 90% by weight of a filler, 5 to 50% by weight of a titanium oxide filler of (B), and 5 to 50% by weight of (C) an epoxy resin. The semiconductor device is a composition, and the semiconductor chip is resin-sealed with a cured product of the sealing resin composition.
[0009]
Hereinafter, the present invention will be described in detail.
[0010]
The sealing resin composition of the present invention is obtained by blending an inorganic filler and a titanium oxide filler having different particle diameters with an epoxy resin.
[0011]
Inorganic filler (A) used in the present invention is used in the sealing resin composition, the inorganic filler is preferably less impurities, heat conductivity, from the standpoint of thermal expansion coefficient, nitriding silicon, alumina, one of aluminum nitride, or Ru mixture der of two or more thereof. This inorganic filler has a maximum particle size of 300 μm or less and an average particle size of 5 μm or more and 70 μm or less. Moreover, although it is the compounding quantity of this inorganic filler, it is 30 to 90 weight% with respect to the whole resin composition.
[0012]
The titanium oxide filler (B) used in the present invention has a maximum particle size of 5 μm or less and an average particle size of 0.05 μm or more and 1 μm or less. The (B) titanium oxide filler having an average particle size of 0.05 μm or more and 1 μm or less has a particle size conventionally used for white pigments. Moreover, although it is the compounding quantity of this titanium oxide filler, it is 5 to 50 weight% with respect to the whole resin composition. With such a blending amount, the apparatus wear of the inorganic filler can be reduced, and the filling property as a molding material can be enhanced to increase the thermal conductivity.
[0013]
The resin composition of the present invention is obtained by blending the above-mentioned (A) inorganic filler and (B) titanium oxide filler into (C) an epoxy resin.
[0014]
Epoxy resins can be advantageously used industrially among thermosetting resins.
[0015]
The encapsulating resin composition of the present invention comprises the above-mentioned inorganic filler (A) and titanium oxide filler (B) and (C) epoxy resin as main components, but does not contradict the purpose of the present invention. As long as necessary, a solvent for adjusting viscosity, a coupling agent, and other additives can be blended. Examples of the solvent include dioxane, hexane, benzene, toluene, solvent naphtha, industrial gasoline, cellosolve acetate, butyl cellosolve acetate, butyl carbitol acetate, dimethylformamide, dimethylacetamide, N-methylpyrrolidone and the like. Two or more types can be mixed and used.
[0016]
General methods for preparing the sealing resin composition of the present invention as a molding material include the inorganic filler (A), the titanium oxide filler (B), the epoxy resin and its curing agent ( C) An epoxy resin, a solvent, a coupling agent, and other additives are blended, kneaded by a conventional method using a kneader, roll mill, mixer, etc., and then pulverized to an appropriate size to obtain a molding material. be able to.
[0017]
In addition, the semiconductor device of the present invention can be easily manufactured by sealing the semiconductor chip using the molding material described above. The semiconductor chip for sealing is not particularly limited, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, or the like. As the most general method of sealing, there is a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor device sealed with this cured product is obtained. The curing by heating is desirably performed by heating to 150 ° C. or higher.
[0018]
[Action]
In the present invention, the sealing resin composition of the present invention is obtained by blending a specific amount of an inorganic filler and a titanium oxide filler having different particle diameters and an epoxy resin. By using this resin composition, the filling property and workability are good, the wear of the device in the molding process is reduced, and a semiconductor device with low internal stress can be obtained by transfer molding or the like.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited by these Examples.
[0020]
Reference example 1
(A) A crystalline silica filler having a maximum particle diameter of 120 μm or less and an average particle diameter of 25 μm as an inorganic filler, and a maximum particle diameter of 1 μm and an average particle diameter of 0.2 μm (B) a titanium oxide filler If, in proportions shown (C) a d epoxy resin in Table 1, kneaded in a roll mill cooled, and pulverized to obtain an epoxy resin composition 1 and 2.
[0021]
Example 1
Similarly, an alumina filler having a maximum particle diameter of 90 μm or less and an average particle diameter of 25 μm, a titanium oxide filler having a maximum particle diameter of 1 μm and an average particle diameter of 0.2 μm used in Example 1, and an epoxy resin Were mixed at a ratio shown in Table 1, kneaded with a roll mill, cooled and pulverized to obtain epoxy resin compositions 3 and 4.
[0022]
Example 2
Similarly, a silicon nitride filler having a maximum particle diameter of 150 μm or less and an average particle diameter of 30 μm, a titanium oxide filler having a maximum particle diameter of 1 μm and an average particle diameter of 0.2 μm used in Example 1, and an epoxy Resins were blended in the proportions shown in Table 2, kneaded with a roll mill, cooled and pulverized to obtain epoxy resin compositions 5 and 6.
[0023]
Comparative Example 1
Similarly, the crystalline silica filler used in Reference Example 1, the alumina filler used in Example 1 , the silicon nitride filler used in Example 2 , the titanium oxide filler used in Reference Example 1, and an epoxy resin Were blended in the ratios shown in Tables 2-3, kneaded with a roll mill, cooled and pulverized to obtain epoxy resin compositions 7-10.
[0024]
In order to check the fluidity of the epoxy resin compositions prepared in Reference Example 1, Examples 1 and 2 and Comparative Example 1, the results were obtained by measuring the high flow flow viscosity and spiral flow, thermal conductivity, wear resistance and the like. Are shown in Tables 1 to 3, respectively.
[0025]
The resin compositions of Reference Example 1 and Examples 1 and 2 (Resin Composition Nos. 1 to 6) are superior in fluidity to the resin composition of Comparative Example 1 (Resin Composition Nos. 7 to 10) and have a high filler. Even when filled, the viscosity of the resin composition was low, and the moldability and workability were excellent. Moreover, when the sample using the filler of the same system is compared, the resin composition (resin composition numbers 1 to 6) of Reference Example 1 and Examples 1 and 2 is the resin composition (resin composition number 7) of Comparative Example 1. -10) Excellent thermal conductivity and less wear. As described above, the effect of the present invention was confirmed.
[0026]
[Table 1]
* 2: 175 ° C., load 10 kg (Shimadzu flow tester CFT-500 type).
* 3: Cured at 175 ° C. for 2 minutes, conforming to EMMI standard 1-66.
* 4: 175 ° C. × 5 minutes curing, rapid thermal conductivity meter QTM-MD2 type.
* 5: Hole diameter after 10 shots of 175 ° C., load 50 kg (Shimadzu Flow Tester CFT-500 type), aluminum die (hole diameter φ1 mm).
[0027]
[Table 2]
* 2: 175 ° C., load 10 kg (Shimadzu flow tester CFT-500 type).
* 3: Cured at 175 ° C. for 2 minutes, conforming to EMMI standard 1-66.
* 4: 175 ° C. × 5 minutes curing, rapid thermal conductivity meter QTM-MD2 type.
* 5: Hole diameter after 10 shots of 175 ° C., load 50 kg (Shimadzu Flow Tester CFT-500 type), aluminum die (hole diameter φ1 mm).
[0028]
[Table 3]
【The invention's effect】
By using the thermosetting resin composition containing an inorganic filler and a titanium oxide filler having different particle diameters of the present invention for sealing of electronic parts such as semiconductors, fluidity and wear resistance in a transfer molding process are improved. In addition, it has excellent thermal conductivity and can improve both workability and characteristics.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22371998A JP3880211B2 (en) | 1998-07-23 | 1998-07-23 | Resin composition for sealing and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22371998A JP3880211B2 (en) | 1998-07-23 | 1998-07-23 | Resin composition for sealing and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000038516A JP2000038516A (en) | 2000-02-08 |
| JP3880211B2 true JP3880211B2 (en) | 2007-02-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP22371998A Expired - Lifetime JP3880211B2 (en) | 1998-07-23 | 1998-07-23 | Resin composition for sealing and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2012089750A (en) * | 2010-10-21 | 2012-05-10 | Hitachi Chem Co Ltd | Thermosetting resin composition for sealing and filling semiconductor, and semiconductor device |
| JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
| JP2015040260A (en) * | 2013-08-22 | 2015-03-02 | 富士電機株式会社 | Nanocomposite resin composition |
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| JP4264991B2 (en) * | 1997-03-27 | 2009-05-20 | 住友ベークライト株式会社 | Thermosetting resin composition and semiconductor device |
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