JP3909281B2

JP3909281B2 - Semiconductor element storage package and semiconductor device

Info

Publication number: JP3909281B2
Application number: JP2002306277A
Authority: JP
Inventors: 貢浦谷
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2002-09-19
Filing date: 2002-10-21
Publication date: 2007-04-25
Anticipated expiration: 2022-10-21
Also published as: JP2004165178A

Description

【０００１】
【発明の属する技術分野】
本発明は、樹脂製の基体を用いた半導体素子収納用パッケージおよび半導体装置に関する。
【０００２】
【従来の技術】
従来、ＬＳＩ，ＩＣや光通信分野に使用される電気信号を光信号に変換する半導体レーザ（ＬＤ）、光信号を電気信号に変換するフォトダイオード（ＰＤ）等の半導体素子を収容するための半導体素子収納用パッケージ（以下、半導体パッケージともいう）を図６に示す。同図に示すように、半導体パッケージは、上面に形成された凹部11ｂの底面の略中央部に半導体素子15を載置するための載置部13を有し、エポキシ樹脂等の熱硬化性樹脂、ポリフェニレンサルファイト（ＰＰＳ）や液晶ポリマー（ＬＣＰ）等のエンジニアリングプラスチック等の電気的に絶縁性の樹脂から成る基体11と、両端が基体11の側壁部12の内外に突出するように取着され、側壁部12の外側に突出する一端が外部電気回路に接続される複数のリード端子17とから主に構成されている。半導体装置は、半導体素子15が収容された半導体パッケージと基体11の側壁部12の上面に封止材18を介して取着されて内側を気密に封止する蓋体19とから主に構成されている（例えば、下記の特許文献１参照）。
【０００３】
なお、蓋体19は鉄（Ｆｅ）−ニッケル（Ｎｉ）合金等から成る金属製の平板状のものが使用される。
【０００４】
そして、基体11の載置部13上にシリコン（Ｓｉ）等から成る基板14上に搭載された半導体素子15を載置固定するとともに、半導体素子15の各電極をリード端子17にボンディングワイヤ等の電気的接続手段16を介して電気的に接続し、しかる後、側壁部12の上面に蓋体19を樹脂接着剤等の封止材18を介して接合し、基体11と蓋体19とから成る容器内部に半導体素子15を収容することによって、製品としての半導体装置が完成する。この半導体装置は、半導体素子15にリード端子17を介して外部電気回路から供給される駆動信号を入力し、半導体素子15に光を励起させて励起した光を側壁部12に形成された貫通穴11ａに取着された光ファイバ20で伝達させることによって、または光ファイバ20を伝達する光を半導体素子15で受光させ、半導体素子15で受光された光に対応する電気信号を発生させ、発生した電気信号をリード端子17を介して取り出すことによって作動する。このような半導体装置は光通信分野で多用される。
【０００５】
【特許文献１】
特開平11−64689号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、上記従来の半導体パッケージでは、側壁部12の上面に蓋体19を樹脂接着剤等の封止材18を介して接合しているため、半導体パッケージ内部への水分の浸入が封止材18を通して発生し、その結果、半導体素子15の作動性が劣化するという問題点があった。
【０００７】
従って、本発明は上記問題点に鑑み完成されたものであり、その目的は、樹脂製の基体の側壁部と蓋体との接合を非常に強固なものとして、半導体素子収納用パッケージ内部への水分の浸入を有効に防止することにある。
【００１２】
【課題を解決するための手段】
本発明の半導体収納用パッケージは、上面に形成された凹部の底面に半導体素子を載置するための載置部が設けられた樹脂製の基体と、該基体の側壁部の上面と略同形の枠状であり、枠部の幅が前記側壁部の上面の幅よりも小さく、かつ前記側壁部の上面に、下側主面および両側面が埋め込まれた金属部材と、前記側壁部の上面に設けられる樹脂製の蓋体と、前記側壁部に一端部が前記側壁部の内側に突出し他端部が前記側壁部の外側に突出するようにして埋め込まれたリード端子と、を備え、前記蓋体の下面の外周部に、上側主面および両側面が埋め込まれた枠状の金属部材が設けられ、前記側壁部の上面に埋め込まれた金属部材と前記基体の下面に埋め込まれた金属部材とが接合されることを特徴とする。
【００１３】
本発明の半導体素子収納用パッケージは、上記の構成により、蓋体の金属部材が基体の金属部材に強固に半田付けあるいは溶接される。また、蓋体の金属部材と蓋体とが金属部材の上側主面およびその両側面で接するために接触面積が大きくなって金属部材と蓋体の下面との密着力を大きくすることができる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００１４】
本発明の半導体素子収納用パッケージは、上面に形成された凹部の底面に半導体素子を載置するための載置部が設けられた樹脂製の基体と、該基体の側壁部の上面と略同形の枠状であり、枠部の幅が前記側壁部の上面の幅よりも小さく、かつ前記側壁部の上面に、下側主面および両側面が埋め込まれた金属部材と、前記側壁部の上面に設けられる蓋体と、前記側壁部に一端部が前記側壁部の内側に突出し他端部が前記側壁部の外側に突出するようにして埋め込まれたリード端子と、を備え、前記蓋体は、樹脂製の蓋体本体部と、該蓋体本体部の側面に、内周面が全周にわたって直接密着した金属枠体とで構成され、前記金属部材と前記金属枠体とが接合されることを特徴とする。
【００１５】
本発明の半導体素子収納用パッケージは、上記の構成により、蓋体を成す金属枠体が基体の金属部材に強固に半田付けあるいは溶接される。また、蓋体の外周部が金属枠体で構成されているため、蓋体全体を歪み難くすることができ、急激な温度変化等が生じたとしても蓋体と側壁部との接合部における応力を生じ難くし、蓋体が側壁部から外れたり、蓋体や側壁部にクラックが生じたりするのを有効に抑制することができる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００１６】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージと、該半導体素子収納用パッケージの前記載置部に載置固定された半導体素子と、該半導体素子と電気的に接続されるとともに、前記側壁部に一端部が前記側壁部の内側に突出し他端部が前記側壁部の外側に突出するようにして埋め込まれたリード端子と、前記側壁部の上面に埋め込まれた前記金属部材と半田を介して接合された前記蓋体と、を備えることを特徴とする。
【００１７】
本発明の半導体装置は、上記の構成により、上記本発明の半導体素子収納用パッケージを用いた接合の信頼性の高いものとなる。
【００１８】
本発明の半導体装置において、好ましくは、前記半田は厚さが0.01乃至0.2ｍｍとされており、前記基体と前記蓋体との熱膨張係数差が30×10^-6／℃以下であることを特徴とする。
【００１９】
本発明の半導体装置は、半田の厚さが0.01乃至0.2ｍｍとされており、基体と蓋体との熱膨張係数差が30×10^-6／℃以下であることから、基体の側壁部と蓋体との半田による接合がより強固となり、より信頼性の高いものとなる。
【００２０】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージと、該半導体素子収納用パッケージの前記載置部に載置固定された半導体素子と、該半導体素子と電気的に接続されるとともに、前記側壁部に一端部が前記側壁部の内側に突出し他端部が前記側壁部の外側に突出するようにして埋め込まれたリード端子と、前記側壁部の上面に埋め込まれた前記金属部材と溶接された前記蓋体と、を備える半導体装置。
【００２１】
本発明の半導体装置は、上記の構成により、上記本発明の半導体素子収納用パッケージを用いた接合の信頼性の高いものとなる。
【００２４】
【発明の実施の形態】
本発明の半導体素子収納用パッケージおよび半導体装置を以下に詳細に説明する。図１は本発明の半導体収納用パッケージについて実施の形態の例を示す斜視図、図２は図１の断面図、図３は本発明の半導体パッケージについて実施の形態の他の例を示す断面図、図４，５は本発明の半導体パッケージにおける蓋体について実施の形態の他の各種例を示す断面図である。これらの図において、１は樹脂製の基体、２は基体１の側壁部、２ａは金属部材、３は基体１の凹部１ｂの底面に設けられた半導体素子５の載置部、４は半導体素子を搭載するための基板、５はＬＳＩ，ＩＣ，ＬＤ，ＰＤ等の半導体素子である。また、６はボンディングワイヤ等の電気的接続手段、７は半導体素子５の電極に電気的に接続されるリード端子、９は蓋体、10は光ファイバである。
【００２５】
本発明の半導体パッケージは、上面に形成された凹部１ｂの底面に半導体素子５を載置するための載置部３が設けられた樹脂製の基体１と、基体１の側壁部２の上面と略同形の枠状とされているとともに枠部の幅が側壁部２の上面の幅よりも小さい、側壁部２の上面に下側主面および両側面が埋め込まれた金属部材２ａと、側壁部２に一端部が側壁部２の内側に突出し他端部が側壁部２の外側に突出するようにして埋め込まれたリード端子７とを具備している。
【００２６】
そして、基体１の側壁部２の上面に埋め込まれた金属部材２ａに半田（図４の金属部材９ｂが設けられた蓋体９や図５の金属枠体９ｃが設けられた蓋体９、金属製の蓋体９の場合は溶接でも可）を介して蓋体９が接合されることによって、半導体装置が構成される。
【００２７】
本発明の基体１は、エポキシ樹脂等の熱硬化性樹脂、ＰＰＳやＬＣＰ等のエンジニアリングプラスチック等から成り、トランスファモールド法またはインジェクションモールド法によって製作される。
【００２８】
リード端子７および基体１の金属部材２ａは、Ｆｅ−Ｎｉ−Ｃｏ（コバルト）合金やＦｅ−Ｎｉ合金等の金属から成り、例えばＦｅ−Ｎｉ−Ｃｏ合金等から成るインゴット（塊）に圧延加工法や打ち抜き加工法等の従来周知の金属加工法を施すことによって作製される。リード端子７および金属部材２ａの側壁部２への取着は、基体１をトランスファモールド法またはインジェクションモールド法により成型する際に予め金型内の所定位置にリード端子７および金属部材２ａをセットしておくことによって、リード端子７は側壁部２の内側に一端部が突出し他端部が側壁部２の外側に突出するように側壁部２に埋め込まれた状態で、また、金属部材２ａは側壁部２の上面に金属部材２ａの下側主面および両側面が埋め込まれた状態で、それぞれ基体１に一体的に取着される。
【００２９】
リード端子７は、その側壁部２内側の一端部が側壁部２の内側に突出しており、その一端部の上面にボンディングワイヤ等の電気的接続手段６を接続する。また、リード端子７の側壁部２外側の他端部は側壁部２の外側に突出しており、その他端部を外部電気回路と接続する。
【００３０】
また、リード端子７は、その露出する表面に良導電性で耐蝕性に優れたＮｉや金（Ａｕ）等の金属をメッキ法により所定厚み（１〜20μｍ）に被着させておくのがよく、リード端子７の酸化腐蝕を有効に防止できるとともに、外部リード端子７と電気的接続手段６との接続およびリード端子７と外部電気回路との接続を良好なものとして、信頼性の高い接続を実現できる。
【００３１】
基体１の金属部材２ａは、その厚みが0.1〜３ｍｍとされているのがよい。0.1ｍｍ未満であると、金属部材２ａの側面と側壁部２との接触面積を大きくし難くなり、金属部材２ａと側壁部２との密着力が小さくなり易い。また、３ｍｍを超えると、側壁部２を構成する樹脂よりも密度が大きい金属部材２ａの体積が大きくなって半導体収納用パッケージを軽量化し難くなる。
【００３２】
また、基体１の金属部材２ａは、その下側主面と側壁部２の上面と間の距離が金属部材２ａの厚みの0.1〜１倍とされているのがよい。0.1倍未満であると、金属部材２ａと側壁部２との接触面の面積が小さくなって、金属部材２ａと側壁部２との密着強度が小さくなり易い。また、１倍を超えると、金属部材２ａの上側主面が側壁部２の上面より下側に位置することにより側壁部２上面が凹状となり、金属部材２ａと蓋体９とを半田を介して接合する際、上記凹状の部分に空隙が生じ易くなって半田が破壊され易くなる。
【００３３】
さらに、基体１の金属部材２ａは、その側壁部２の内面側の端と側壁部２の内面との距離が0.1〜５ｍｍとされているのがよい。0.1ｍｍ未満であると、金属部材２ａに半田を介して蓋体９を接着した場合、半田が側壁部２の内面側にはみ出して、半導体素子５とリード端子７とを電気的に接続する電気的接続手段６と接し易くなり、電気的接続手段６同士を短絡させる可能性が高くなる。また、側壁部２の内面と金属部材２ａの側壁部２の内面側の端との間の側壁部２の厚みが薄くなって側壁部２に割れや欠けが発生し易くなる。一方、５ｍｍを超えると、側壁部２の上面の幅が大きくなり、それに伴って基体１の大きさが大きくなるため半導体パッケージの小型化が困難になる。
【００３４】
また、基体１の金属部材２ａは、側壁部２の外面側の端と側壁部２の外面との距離が0.1〜５ｍｍとされているのがよい。0.1ｍｍ未満であると、側壁部２の外面と金属部材２ａの側壁部２の外面側の端との間の側壁部２の厚みが薄くなって側壁部２に割れや欠けが発生し易くなる。一方、５ｍｍを超えると、側壁部２の上面の幅が大きくなり、それに伴って基体１の大きさが大きくなるため半導体パッケージの小型化が困難になる。
【００３５】
また、基体１の金属部材２ａは、基体１の側壁部２の上面に金属部材２ａの下側主面および両側面が埋め込まれており、その露出部に半田を介して蓋体９が接続される。
【００３６】
なお、基体１の金属部材２ａは、その露出する表面に良導電性で耐蝕性に優れたＮｉやＡｕ等の金属をめっき法により所定厚み（１〜20μｍ）に被着させておくのがよく、金属部材２ａの酸化腐蝕を有効に防止できるとともに、蓋体９との半田を介した接合を良好なものとして、信頼性の高い接合を実現できる。
【００３７】
基体１の金属部材２ａに接合される蓋体９は、エポキシ樹脂等の熱硬化性樹脂，ＰＰＳやＬＣＰ等のエンジニアリングプラスチック等の樹脂、Ｆｅ−Ｎｉ合金，Ｆｅ−Ｎｉ−Ｃｏ合金等の金属またはアルミナ（Ａｌ₂Ｏ₃）質焼結体（アルミナセラミックス），ムライト（３Ａｌ₂Ｏ₃・２ＳｉＯ₂）質焼結体，窒化珪素（Ｓｉ₃Ｎ₄）質焼結体等のセラミックスから成る平板状のものであり、金属部材２ａの上側主面に半田を介して接合される。蓋体９がセラミックスから成る場合、蓋体９の下面の接合部にはタングステン（Ｗ），モリブデン（Ｍｏ），マンガン（Ｍｎ）等から成るメタライズ層を被着する。この蓋体９で側壁部２の内側を塞ぐことよって基体１と蓋体９とで構成される容器内に半導体素子５が収容される。
【００３８】
また、本発明の他の発明において、基体１の金属部材２ａに接合される蓋体９は、エポキシ樹脂等の熱硬化性樹脂，ＰＰＳやＬＣＰ等のエンジニアリングプラスチック等の樹脂から成り、図３に示すように、下面の外周部には全周にわたって銅（Ｃｕ），銀（Ａｇ），Ａｕ等から成る金属層９ａが被着されている。そして、この金属層９ａと金属部材２ａとを半田を介して接合し、蓋体９で側壁部２の内側を塞ぐことによって基体１と蓋体９とで構成される容器内に半導体素子５が収容される。
【００３９】
この構成により、金属層９ａが基体１の金属部材２ａに強固に半田付けされる。その結果、半導体パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子５を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００４０】
蓋体９に金属層９ａを被着するには、トランスファモールド法またはインジェクションモールド法により成型した樹脂製の蓋体９の下面の外周部に、厚さ0.1〜20μｍの化学Ｃｕめっきを施す。そして、ＮｉやＡｕ等の金属をめっき法により0.05〜20μｍの厚さに被着させることにより金属層９ａを設ける。なお、金属層９ａの被着は、めっき法以外にスパッタリング法、真空蒸着法、イオンプレーティング法、転写法、導電剤塗装等いずれの方法によっても可能である。
【００４１】
また、本発明の他の発明において、基体１の金属部材２ａに接合される蓋体９は、エポキシ樹脂等の熱硬化性樹脂，ＰＰＳやＬＣＰ等のエンジニアリングプラスチック等の樹脂から成り、図４に示すように、下面の外周部に基体１の金属部材２ａを覆う枠状の金属部材９ｂがその上側主面および側面が埋め込まれて設けられている。この場合、基体１の金属部材２ａと蓋体９の金属部材９ｂとを半田付けあるいは溶接により接合し、蓋体９で側壁部２の内側を塞ぐことによって基体１と蓋体９とで構成される容器内に半導体素子５が収容される。
【００４２】
この構成により、蓋体９の金属部材９ｂが基体１の金属部材２ａに強固に半田付けあるいは溶接される。また、蓋体９の金属部材９ｂと蓋体９とが金属部材９ｂの上側主面およびその両側面で接するために接触面積が大きくなって金属部材９ｂと蓋体９の下面との密着力を大きくすることができる。その結果、半導体パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子５を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００４３】
蓋体９の金属部材９ｂは、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えばＦｅ−Ｎｉ−Ｃｏ合金等から成るインゴットに圧延加工法や打ち抜き加工法等の従来周知の金属加工法を施すことによって作製される。金属部材９ｂの蓋体９への取着は、蓋体９をトランスファモールド法またはインジェクションモールド法により成型する際に予め金型内の所定位置に金属部材９ｂをセットしておくことによって、蓋体９の下面に金属部材９ｂの下側主面および両側面が埋め込まれた状態で、蓋体９に一体的に取着される。
【００４４】
蓋体９の金属部材９ｂはその厚みが0.1〜３ｍｍとされているのがよい。0.1ｍｍ未満であると、金属部材９ｂの両側面と蓋体９との接触面積を大きくし難くなり、金属部材９ｂと蓋体９との密着力が小さくなり易い。また、３ｍｍを超えると、密度が蓋体９を構成する樹脂よりも大きい金属部材９ｂの体積が大きくなって半導体パッケージを軽量化し難くなる。
【００４５】
また、蓋体９の金属部材９ｂはその上側主面と蓋体９の下面との間の距離が金属部材９ｂの厚みの0.1〜１倍とされているのがよい。0.1倍未満であると、金属部材９ａと蓋体９との接触面の面積が小さくなって、金属部材９ｂと蓋体９との密着強度が小さくなり易い。また、１倍を超えると、金属部材９ｂの下側主面が蓋体９の下面よりも上側に位置することにより蓋体９下面が凹状となり、蓋体９の金属部材９ｂと基体１の金属部材２ａとを半田を介して接合する際、上記凹状の部分に空隙が生じ易くなって半田が破壊され易くなる。
【００４６】
さらに本発明の他の発明において、基体１の金属部材２ａに接合される蓋体９は、図５に示すように、中心部がエポキシ樹脂等の熱硬化性樹脂，ＰＰＳやＬＣＰ等のエンジニアリングプラスチック等の樹脂製の蓋体本体部９Ａと、外周部が基体１の金属部材２ａを覆う下面を有する、蓋体本体部９Ａの側面に内周面が全周にわたって直接密着した金属枠体９ｃとで構成されている。この場合、基体１の金属部材２ａと蓋体９の金属枠体９ｃとを半田接合あるいは溶接により接合し、蓋体９で側壁部２の内側を塞ぐことによって基体１と蓋体９とで構成される容器内に半導体素子５が収容される。
【００４７】
この構成により、金属枠体９ｃが、基体１の金属部材２ａに強固に半田付けあるいは溶接される。また、蓋体９の外周部が金属枠体９ｃで構成されているため、蓋体９全体を歪み難くすることができ、急激な温度変化等が生じたとしても蓋体９と側壁部２との接合部における応力を生じ難くし、蓋体９が側壁部２から外れたり、蓋体９や側壁部２にクラックが生じたりするのを有効に抑制することができる。その結果、半導体パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子５を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００４８】
金属枠体９ｃは、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えばＦｅ−Ｎｉ−Ｃｏ合金等から成るインゴットに圧延加工法や打ち抜き加工法等の従来周知の金属加工法を施すことにより作製される。金属枠体９ｃの蓋体本体部９Ａへの取着は、蓋体９をトランスファモールド法またはインジェクションモールド法により成型する際に予め金型内の所定位置に金属枠体９ｃをセットしておくことによって、蓋体本体部９Ａの側面に金属枠体９ｃの内周面が全周にわたって直接密着して設けられる。
【００４９】
さらに、金属層９ａ、蓋体９の金属部材９ｂおよび金属枠体９ｃの露出部分は、半田との濡れ性を良くするため、また酸化腐蝕を有効に防止するため、ＮｉやＡｕ等の金属をめっき法により0.05〜20μｍの厚さで被着させておくのが良い。
【００５０】
基体１の金属部材２ａの上側主面への蓋体９の接合は、それらの接合部における水分の浸入を有効に防止するために金属である半田から成る接合材を用いるのがよい。この接合材の溶融温度が非常に高い場合、側壁部２が軟化するため光ファイバ10の固定が困難となる。従って、接合材としては溶融温度の低い半田を用いる。具体的には、接合材としてＳｎ（錫）−Ｐｂ（鉛）半田（融点190℃）、Ｓｎ−Ａｇ半田（融点221℃）等の低融点の半田を用いる。そして、例えばＳｎ−Ｐｂ半田等の粉末に有機溶剤、溶媒を添加混合して得た半田ペーストを、側壁部２の上面に埋め込まれた金属部材２ａ上に予め従来周知のスクリーン印刷法により印刷塗布しておき、その上に蓋体９を配置し、半田ペーストを加熱することにより、側壁部２の上面に金属部材２ａを介して蓋体９が接合される。
【００５１】
なお、側壁部２と蓋体９との接合部における外部からの水分の浸入を有効に防止するためには、それらの接合を強固とする必要がある。そのため、接合後の半田は、蓋体９と基体１の金属部材２ａとの間の厚さが0.01乃至0.2ｍｍで、基体１と蓋体９（金属枠体９ｃを有する場合は蓋体本体部９Ａ）との熱膨張係数差が30×10^-6／℃以下であることが好ましい。
【００５２】
半田の厚さが0.01ｍｍ未満の場合、側壁部２と蓋体９との接合部で十分な接合強度が得られ難い。半田の厚さが0.2ｍｍを超える場合、側壁部２の上面と蓋体９の下面とを平行に接合することが困難となるため不均一な熱ストレスが発生し易くなり、結果的に十分な強度が得られ難い。
【００５３】
また、基体１と蓋体９は、例えば、基体１が熱膨張係数が18.4×10^-6／℃であるオルソクレゾールノボラック型エポキシ樹脂から成り、蓋体９が熱膨張係数が5.8×10^-6／℃であるＦｅ−Ｎｉ合金から成る場合、それらの熱膨張係数差は30×10^-6／℃以下となり好ましいものとなる。熱膨張係数差が30×10^-6／℃を超えると、接合部が剥離したり、接合部付近で側壁部２や蓋体９、半田にクラックや割れ等が発生し易くなる。
【００５４】
また、側壁部２と蓋体９との接合については、Ｆｅ−Ｎｉ合金，Ｆｅ−Ｎｉ−Ｃｏ合金等から成る金属製の蓋体９の場合、蓋体９に金属部材９ｂが設けられている場合、あるいは蓋体９に金属枠体９ｃが設けられている場合、側壁部２の上面の金属部材２ａに、シーム溶接等の溶接によっておこなってもよい。この場合にも、外部からの水分の浸入を有効に防ぐことができる。
【００５５】
本発明の半導体装置は、上記本発明の半導体パッケージの載置部３に載置固定された半導体素子５がリード端子７に電気的に接続されるとともに、基体１の側壁部２の上面に埋め込まれた枠状の金属部材２ａに蓋体９が半田接合あるいは溶接されている構成である。本発明の半導体装置は、本発明の半導体パッケージを用いることにより、内部への水分の浸入が抑制されて半導体素子５の作動性が非常に優れたものとなり、半導体素子５を長期にわたり正常かつ安定に作動させ得るものとなる。
【００５６】
【実施例】
本発明の半導体素子収納用パッケージおよび半導体装置の実施例を以下に説明する。
【００５７】
（実施例１）
図２に示した半導体装置を以下のようにして構成した。Ｆｅ−Ｎｉ合金から成るリード端子７と金属部材２ａとを有する基体１を、熱膨張係数が35.8×10^-6／℃のエポキシ樹脂をトランスファ成型することにより製作した。このとき、略直方体の基体１は縦10ｍｍ×横８ｍｍ×高さ４ｍｍで、かつ側壁部２の幅が２ｍｍであり、また、金属部材２ａは縦9.5ｍｍ×横7.5ｍｍ×厚さ0.25ｍｍで、かつ枠部の幅が１ｍｍの枠状であった。
【００５８】
次に、基体１の凹部１ｂの底面の載置部３に、アルミナセラミックスから成る基板４を載置して樹脂接着剤で固定し、基板４の上面の導体層上にＬＤから成る半導体素子５を半田で接合して搭載し、半導体素子５の上面の電極をボンディングワイヤを介してリード端子７に接続した。
【００５９】
そして、側壁部２上面に埋め込まれた枠状の金属部材２ａに、縦10ｍｍ×横８ｍｍ×厚さ１ｍｍでＦｅ−Ｎｉ合金（熱膨張係数5.8×10^-6／℃）から成る蓋体９の下面の外周部を、厚さ0.01ｍｍのＳｎ−Ｐｂ半田で接合することにより20個のサンプルを製作した（サンプルＡ）。
【００６０】
また、比較例として、Ｆｅ−Ｎｉ合金から成るリード端子７を有する基体１を、熱膨張係数が35.8×10^-6／℃のエポキシ樹脂をトランスファ成型することにより製作した。このとき、略直方体の基体１の形状はサンプルＡと同様であった。そして、サンプルＡと同様にして半導体素子５を搭載後、側壁部２上面に、縦10ｍｍ×横８ｍｍ×厚さ１ｍｍでＦｅ−Ｎｉ合金（熱膨張係数5.8×10^-6／℃）から成る蓋体９の下面の外周部を、エポキシ樹脂から成る接着剤で接着することにより20個のサンプルを製作した（サンプルＢ）。
【００６１】
これらについて、温度サイクル試験装置（株式会社タバイエスペック製「ＴＳＡ−201Ｓ」）内にセットし、温度サイクル（−40℃〜85℃）を１サイクル（７時間）加えたところサンプルＢの20個すべてに、基体１と接着剤との間で剥離が発生した。このサンプルＢでは半導体パッケージ内部に水分が浸入し易くなる。一方、サンプルＡでは基体１と半田との間で剥離が発生することはなく、本発明のサンプルＡが良いことが判った。
【００６２】
（実施例２）
次に、サンプルＡにおいて基体１を３種類の熱膨張係数のものに設定したときのそれぞれの接合状態を調べた。即ち、熱膨張係数が18.4×10^-6／℃のエポキシ樹脂から成るもの（サンプルＡ１）と、熱膨張係数が35.8×10^-6／℃のエポキシ樹脂から成るもの（サンプルＡ）と、熱膨張係数が40.3×10^-6／℃のエポキシ樹脂から成るもの（サンプルＡ２）との３種類を準備した。そして、基体１の側壁部２上面の金属部材２ａとＦｅ−Ｎｉ合金（熱膨張係数5.8×10^-6／℃）から成る蓋体９下面の外周部とを、厚さ0.01ｍｍのＳｎ−Ｐｂ半田で接合し、上記３種類の各20個合計60個のサンプルを製作した。これらについて、温度サイクル試験装置（株式会社タバイエスペック製「ＴＳＡ−201Ｓ」）内にセットし、温度サイクル（−40℃〜85℃）を１サイクル（７時間）加えた。その結果を表１に示す。
【００６３】
【表１】

【００６４】
表１より、サンプルＡ２のみに、基体１および／または半田にクラック等の割れが発生した不良品が発生した。これらは、基体１と蓋体９との熱膨張係数差が30×10^-6／℃を超えているためと考えられる。この場合、半導体パッケージ内部に水分が浸入し易くなる。従って、サンプルＡ１，Ａのように、基体１と蓋体９との熱膨張係数差が30×10^-6／℃以下であるのが良いことが判った。
【００６５】
（実施例３）
次に、サンプルＡを用いて、半田の厚さを８種に設定したときの接合状態を調べた（下記表２参照）。そして、基体１の金属部材２ａと蓋体９とをＳｎ−Ｐｂ半田で接合し、上記８種類の各20個合計160個のサンプルを製作した。これらについて、温度サイクル試験装置（株式会社タバイエスペック製「ＴＳＡ−201Ｓ」）内にセットし、温度サイクル（−40℃〜85℃）を１サイクル（７時間）加えた。その結果を表２に示す。
【００６６】
【表２】

【００６７】
表２より、サンプルＡ３，Ａ８，Ａ９で基体１と半田との間で剥離が発生した。これらのサンプルでは半導体パッケージ内部に水分が浸入し易くなる。従って、半田の厚さは0.01〜0.2ｍｍとされるのが良いことが判った。
【００６８】
（実施例４）
また、アルミナセラミックス（熱膨張係数７×10^-6／℃）から成る蓋体９を用いて、蓋体９の下面の外周部にＷから成るメタライズ層を形成し、そのメタライズ層を半田を介して基体１の側壁部２の金属部材２ａに接合して成る半導体装置を作製し、上記と同様に温度サイクル試験を行なった結果、上記と同様の結果が得られた。
【００６９】
（実施例５）
また、Ｆｅ−Ｎｉ合金（熱膨張係数5.8×10^-6／℃）から成る蓋体９を溶接することにより基体１の金属部材２ａに接合して成る半導体装置を作製し、上記と同様に温度サイクル試験を行なった結果、上記と同様の結果が得られた。
【００７０】
（実施例６）
次に、エポキシ樹脂（熱膨張係数5.8×10^-6／℃）から成る蓋体９に対して、脱脂処理、ＫＯＨ水溶液によるエッチング処理、ＨＣｌ水溶液による中和洗浄処理、触媒による表面の活性化処理を順次行なった。その後、この蓋体９を化学Ｃｕめっき液に浸漬することにより、蓋体９の下面の外周部に厚さ２μｍのＣｕめっき層を形成し、さらにその表面にめっき法により厚さ５μｍのＮｉめっき層および厚さ１μｍのＡｕめっき層を順次被着して金属層９ａ（外形サイズが縦10ｍｍ×横８ｍｍ×厚さ１ｍｍで、かつ枠部の幅が0.2ｍｍ）を形成した。この蓋体９を用いること以外は実施例１〜３と同様にして図３に示した半導体装置（サンプルＣおよびサンプルＣ１〜Ｃ９）を作製し、実施例１〜３と同様に温度サイクル試験を行なった。その結果を表３，４に示す。
【００７１】
【表３】

【００７２】
【表４】

【００７３】
表３，４より、実施例１〜３の場合と同様の結果が得られ、従来の基体１にエポキシ樹脂から成る接着剤で蓋体９を接着したもの（サンプルＢ）に比べ、本発明のサンプルＣが良いことが判った。また、基体１と蓋体９との熱膨張係数差が30×10^-6／℃以下であるのが良いことが判った。さらに、半田の厚さは0.01〜0.2ｍｍとされるのが良いことが判った。
【００７４】
（実施例７）
次に、図４のように、外形サイズが縦9.5ｍｍ×横7.5ｍｍ×厚さ0.25ｍｍで、かつ枠部の幅が１ｍｍの金属部材９ｂがその上側主面および側面が埋め込まれて下面に一体的に取着されたエポキシ樹脂（熱膨張係数5.8×10^-6／℃）から成る蓋体９をトランスファ成型することにより作製した。そして、蓋体９の下面の金属部材９ｂの露出部に半田との濡れ性に優れるＮｉおよびＡｕをめっき法により計３μｍの厚さに順次被着した。この蓋体９を用いること以外は、実施例１〜３と同様にして半導体装置（サンプルＤおよびＤ１〜Ｄ９）を製作し、実施例１〜３と同様に温度サイクル試験を行なった。その結果を表５，６に示す。
【００７５】
【表５】

【００７６】
【表６】

【００７７】
表５，６より、実施例１〜３の場合と同様の結果が得られ、従来の基体１にエポキシ樹脂から成る接着剤で蓋体９を接着したもの（サンプルＢ）に比べ、本発明のサンプルＤが良いことが判った。また、基体１と蓋体９との熱膨張係数差が30×10^-6／℃以下であるのが良いことが判った。さらに、半田の厚さは0.01〜0.2ｍｍとされるのが良いことが判った。
【００７８】
（実施例８）
次に、図５のように、外形サイズが縦10ｍｍ×横８ｍｍ×厚さ１ｍｍで、かつ枠部の幅が１ｍｍの金属枠体９ｃが一体的に取着されたエポキシ樹脂（熱膨張係数5.8×10^-6／℃）から成る蓋体９をトランスファ成型することにより作製した。この蓋体９を基体１の側壁部２の金属部材２ａに溶接によって接合すること以外は、実施例１〜３と同様にして半導体装置（サンプルＥおよびＥ１〜Ｅ９）を製作し、実施例１〜３と同様に温度サイクル試験を行なった。その結果を表７，８に示す。
【００７９】
【表７】

【００８０】
【表８】

【００８１】
表７，８より、実施例１〜３の場合と同様の結果が得られ、従来の基体１にエポキシ樹脂から成る接着剤で蓋体９を接着したもの（サンプルＢ）に比べ、本発明のサンプルＥが良いことが判った。また、基体１と蓋体９との熱膨張係数差が30×10^-6／℃以下であるのが良いことが判った。さらに、半田の厚さは0.01〜0.2ｍｍとされるのが良いことが判った。
【００８２】
（実施例９）
また、実施例７，８で用いた蓋体９を溶接することにより基体１の金属部材２ａに接合して成る半導体装置を作製し、上記と同様に温度サイクル試験を行なった結果、上記と同様の結果が得られた。
【００８３】
なお、本発明は上記実施の形態および実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲内であれば種々の変更を施すことは何等差し支えない。例えば、上記実施の形態では、図１のように基体１の側壁部２に光ファイバ10を取着するものについて説明したが、半導体素子５がＬＳＩ，ＩＣ等であって光ファイバ10が不要な場合には、側壁部２に貫通孔１ａを形成する必要はない。また、金属層９ａ、蓋体９の金属部材９ｂあるいは金属枠体９ｃの幅は、基体１の金属部材２ａの幅よりも小さくてもよい。この場合、金属層９ａ、蓋体９の金属部材９ｂあるいは金属枠体９ｃと、基体１の金属部材２ａとを半田を介して接合した際、金属層９ａ、蓋体９の金属部材９ｂあるいは金属枠体９ｃの露出した側面に半田の連続したメニスカスが形成され、接合強度が向上するとともに水分の浸入をより有効に防止できる。
【００８４】
【発明の効果】
本発明の半導体素子収納用パッケージは、基体の側壁部の上面と略同形の枠状とされているとともに枠部の幅が側壁部の上面の幅よりも小さい、側壁部の上面に下側主面および両側面が埋め込まれた金属部材を有したことから、上記金属部材が金属製の蓋体やセラミック製で接合部にメタライズ層が被着された蓋体に強固に半田付けされる。また、金属部材と側壁部とが金属部材の下側主面およびその側面で接するために接触面積が大きくなって金属部材と側壁部の上面との密着力を大きくすることができる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００８５】
本発明の半導体素子収納用パッケージは、側壁部の上面に、下面の外周部に基体の金属部材を覆う金属層が全周にわたって被着されている樹脂製の蓋体が設けられることから、上記金属層が基体の金属部材に強固に半田付けされる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００８６】
本発明の半導体素子収納用パッケージは、側壁部の上面に、下面の外周部に基体の金属部材を覆う枠状の金属部材がその上側主面および両側面が埋め込まれて設けられている樹脂製の蓋体が設けられることから、蓋体の金属部材が基体の金属部材に強固に半田付けあるいは溶接される。また、蓋体の金属部材と蓋体とが金属部材の上側主面およびその両側面で接するために接触面積が大きくなって金属部材と蓋体の下面との密着力を大きくすることができる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００８７】
本発明の半導体素子収納用パッケージは、側壁部の上面に、中心部が樹脂製の蓋体本体部と、外周部が基体の金属部材を覆う下面を有する、蓋体本体部の側面に内周面が全周にわたって直接密着した金属枠体とで構成されている蓋体が設けられることから、蓋体を成す金属枠体が基体の金属部材に強固に半田付けあるいは溶接される。また、蓋体の外周部が金属枠体で構成されているため、蓋体全体を歪み難くすることができ、急激な温度変化等が生じたとしても蓋体と側壁部との接合部における応力を生じ難くし、蓋体が側壁部から外れたり、蓋体や側壁部にクラックが生じたりするのを有効に抑制することができる。その結果、半導体素子収納用パッケージを半導体装置と成した場合に内部への水分の浸入を有効に防止でき、半導体装置内部の半導体素子を長期にわたり正常かつ安定に作動させ得る信頼性の高いものとなる。
【００８８】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージの載置部に載置固定された半導体素子がリード端子に電気的に接続されるとともに、基体の金属部材に蓋体が半田を介して接合されていることから、上記本発明の半導体素子収納用パッケージを用いた接合の信頼性の高いものとなる。
【００８９】
本発明の半導体装置は、半田の厚さが0.01乃至0.2ｍｍとされており、基体と蓋体との熱膨張係数差が30×10^-6／℃以下であることから、基体の側壁部と蓋体との半田による接合がより強固となり、より信頼性の高いものとなる。
【００９０】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージの載置部に載置固定された半導体素子がリード端子に電気的に接続されるとともに、基体の金属部材に、上記の下面の外周部に基体の金属部材を覆う枠状の金属部材がその上側主面および両側面が埋め込まれて設けられている樹脂製の蓋体、あるいは上記の中心部が樹脂製の蓋体本体部と、外周部が基体の金属部材を覆う下面を有する、蓋体本体部の側面に内周面が全周にわたって直接密着した金属枠体とで構成されている蓋体が溶接によって接合されていることから、上記本発明の半導体素子収納用パッケージを用いた接合の信頼性の高いものとなる。
【００９１】
本発明の半導体装置は、上記本発明の半導体素子収納用パッケージの載置部に載置固定された半導体素子がリード端子に電気的に接続されるとともに、基体の金属部材に金属製の蓋体が溶接によって接合されていることから、上記本発明の半導体素子収納用パッケージを用いた接合の信頼性の高いものとなる。
【図面の簡単な説明】
【図１】本発明の半導体素子収納用パッケージについて実施の形態の例を示す斜視図である。
【図２】図１の半導体素子収納用パッケージの断面図である。
【図３】本発明の半導体素子収納用パッケージについて実施の形態の他の例を示す断面図である。
【図４】本発明の半導体素子収納用パッケージにおける蓋体について実施の形態の他の例を示す断面図である。
【図５】本発明の半導体素子収納用パッケージにおける蓋体について実施の形態の他の例を示す断面図である。
【図６】従来の半導体素子収納用パッケージの例を示す断面図である。
【符号の説明】
１：基体
１ｂ：凹部
２：側壁部
２ａ：金属部材
３：載置部
５：半導体素子
７：リード端子
９：蓋体
９ａ：金属層
９ｂ：金属部材
９ｃ：金属枠体
９Ａ：蓋体本体部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor element housing package and a semiconductor device using a resin base.
[0002]
[Prior art]
Conventionally, semiconductors for housing semiconductor elements such as semiconductor lasers (LD) that convert electrical signals used in LSI, IC and optical communication fields into optical signals, and photodiodes (PD) that convert optical signals into electrical signals An element storage package (hereinafter also referred to as a semiconductor package) is shown in FIG. As shown in the figure, the semiconductor package has a mounting portion 13 for mounting the semiconductor element 15 at a substantially central portion of the bottom surface of the recess 11b formed on the upper surface, and a thermosetting resin such as an epoxy resin. The base 11 made of an electrically insulating resin such as engineering plastics such as polyphenylene sulfite (PPS) and liquid crystal polymer (LCP), and both ends are attached so as to protrude into and out of the side wall 12 of the base 11 The one end projecting outside the side wall portion 12 is mainly composed of a plurality of lead terminals 17 connected to an external electric circuit. The semiconductor device mainly includes a semiconductor package in which a semiconductor element 15 is accommodated and a lid 19 that is attached to the upper surface of the side wall portion 12 of the base 11 via a sealing material 18 and hermetically seals the inside. (For example, refer to Patent Document 1 below).
[0003]
The lid 19 is a metal flat plate made of iron (Fe) -nickel (Ni) alloy or the like.
[0004]
Then, the semiconductor element 15 mounted on the substrate 14 made of silicon (Si) or the like is mounted and fixed on the mounting portion 13 of the base 11, and each electrode of the semiconductor element 15 is bonded to the lead terminal 17 such as a bonding wire. Electrically connected via the electrical connecting means 16, and then the lid 19 is joined to the upper surface of the side wall 12 via a sealing material 18 such as a resin adhesive. A semiconductor device as a product is completed by housing the semiconductor element 15 in the container. In this semiconductor device, a drive signal supplied from an external electric circuit is input to the semiconductor element 15 via the lead terminal 17, and the semiconductor element 15 is excited by light to pass through the through hole formed in the side wall portion 12. 11a is generated by transmitting through the optical fiber 20 attached to 11a, or by causing the semiconductor element 15 to receive light transmitted through the optical fiber 20 and generating an electrical signal corresponding to the light received by the semiconductor element 15. It operates by taking out an electrical signal through the lead terminal 17. Such semiconductor devices are frequently used in the optical communication field.
[0005]
[Patent Document 1]
JP-A-11-64689
[0006]
[Problems to be solved by the invention]
However, in the above-described conventional semiconductor package, the lid 19 is joined to the upper surface of the side wall portion 12 via the sealing material 18 such as a resin adhesive. As a result, there was a problem that the operability of the semiconductor element 15 deteriorated.
[0007]
Accordingly, the present invention has been completed in view of the above-mentioned problems, and its purpose is to make the bonding between the side wall portion of the resin base and the lid extremely strong, so that the inside of the package for housing a semiconductor element can be obtained. It is to effectively prevent moisture from entering.
[0012]
[Means for Solving the Problems]
The semiconductor storage package of the present invention has a resin base provided with a mounting portion for mounting a semiconductor element on the bottom surface of a recess formed on the top surface, and is substantially the same shape as the top surface of the side wall portion of the base body. A metal member having a frame shape, the width of the frame portion being smaller than the width of the upper surface of the side wall portion, the lower main surface and both side surfaces being embedded in the upper surface of the side wall portion, and the upper surface of the side wall portion A resin lid provided;A lead terminal embedded in the side wall portion so that one end portion protrudes inside the side wall portion and the other end portion protrudes outside the side wall portion;A frame-like metal member having an upper main surface and both side surfaces embedded in the outer peripheral portion of the lower surface of the lid, and embedded in the metal member embedded in the upper surface of the side wall and the lower surface of the base body It is characterized by being joined to the metal member.
[0013]
In the semiconductor element storage package of the present invention, the metal member of the lid is firmly soldered or welded to the metal member of the base body by the above configuration. Further, since the metal member of the lid and the lid are in contact with the upper main surface of the metal member and both side surfaces thereof, the contact area is increased, and the adhesion between the metal member and the lower surface of the lid can be increased. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0014]
The package for housing a semiconductor element according to the present invention includes a resin base provided with a mounting portion for mounting a semiconductor element on the bottom surface of a recess formed on the top surface, and substantially the same shape as the top surface of the side wall portion of the base body. A metal member in which the width of the frame portion is smaller than the width of the upper surface of the side wall portion and the lower main surface and both side surfaces are embedded in the upper surface of the side wall portion, and the upper surface of the side wall portion A lid provided on theA lead terminal embedded in the side wall portion so that one end portion protrudes inside the side wall portion and the other end portion protrudes outside the side wall portion;The lid body includes a resin lid body main body, and an inner peripheral surface on a side surface of the lid body main body.All aroundIt is comprised with the metal frame body which contact | adhered directly, The said metal member and the said metal frame body are joined, It is characterized by the above-mentioned.
[0015]
In the semiconductor element storage package of the present invention, the metal frame constituting the lid is firmly soldered or welded to the metal member of the base body by the above configuration. In addition, since the outer periphery of the lid is made of a metal frame, the entire lid can be made difficult to be distorted, and even if a sudden temperature change or the like occurs, the stress at the joint between the lid and the side wall It is possible to effectively prevent the lid from coming off from the side wall or cracking from occurring in the lid or the side wall. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0016]
The semiconductor device of the present invention is a package for housing a semiconductor element of the present invention.A semiconductor element mounted and fixed on the mounting portion of the package for housing a semiconductor element, and electrically connected to the semiconductor element, with one end projecting inside the side wall portion and the like. A lead terminal embedded so that an end protrudes outside the side wall, and the lid member joined to the metal member embedded in the upper surface of the side wall via solder.It is characterized by that.
[0017]
According to the above configuration, the semiconductor device of the present invention has high bonding reliability using the semiconductor element storage package of the present invention.
[0018]
In the semiconductor device of the present invention, preferably, the solder has a thickness of 0.01 to 0.2 mm, and a difference in thermal expansion coefficient between the base and the lid is 30 × 10.^-6/ ° C. or less.
[0019]
In the semiconductor device of the present invention, the thickness of the solder is 0.01 to 0.2 mm, and the difference in thermal expansion coefficient between the base and the lid is 30 × 10.^-6Since it is / ° C. or lower, the solder bonding between the side wall portion of the base and the lid body becomes stronger and more reliable.
[0020]
The semiconductor device of the present invention includes the semiconductor element storage package of the present invention.A semiconductor element mounted and fixed on the mounting portion of the package for housing a semiconductor element, and electrically connected to the semiconductor element, with one end projecting into the side wall and projecting from the other end A semiconductor device comprising: a lead terminal embedded so that a portion protrudes outside the side wall portion; and the lid member welded to the metal member embedded in the upper surface of the side wall portion.
[0021]
According to the above configuration, the semiconductor device of the present invention has high bonding reliability using the semiconductor element storage package of the present invention.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
The semiconductor element storage package and semiconductor device of the present invention will be described in detail below. 1 is a perspective view showing an example of an embodiment of a semiconductor storage package of the present invention, FIG. 2 is a sectional view of FIG. 1, and FIG. 3 is a sectional view showing another example of an embodiment of the semiconductor package of the present invention. 4 and 5 are sectional views showing other various examples of the embodiment of the lid in the semiconductor package of the present invention. In these drawings, 1 is a resin base, 2 is a side wall portion of the

base

1, 2a is a metal member, 3 is a mounting portion of the semiconductor element 5 provided on the bottom surface of the recess 1b of the

base

1, and 4 is a semiconductor element. The substrate 5 is a semiconductor element such as LSI, IC, LD, or PD. 6 is an electrical connection means such as a bonding wire, 7 is a lead terminal electrically connected to the electrode of the

semiconductor element

5, 9 is a lid, and 10 is an optical fiber.
[0025]
The semiconductor package of the present invention includes a resin base 1 provided with a mounting portion 3 for mounting a semiconductor element 5 on the bottom surface of a recess 1b formed on the top surface, and an upper surface of a side wall portion 2 of the base 1. A metal member 2a having a substantially identical frame shape and a width of the frame portion smaller than that of the upper surface of the side wall portion 2, with the lower main surface and both side surfaces embedded in the upper surface of the side wall portion 2, and the side wall portion; 2 is provided with a lead terminal 7 embedded so that one end protrudes inside the side wall 2 and the other end protrudes outside the side wall 2.
[0026]
Then, the metal member 2a embedded in the upper surface of the side wall portion 2 of the base 1 is soldered (the lid body 9 provided with the metal member 9b in FIG. 4 or the lid body 9 provided with the metal frame 9c in FIG. In the case of the lid body 9 made of a metal, welding is also possible), and the lid body 9 is joined to form a semiconductor device.
[0027]
The substrate 1 of the present invention is made of a thermosetting resin such as an epoxy resin, an engineering plastic such as PPS or LCP, and is manufactured by a transfer molding method or an injection molding method.
[0028]
The lead terminal 7 and the metal member 2a of the base 1 are made of a metal such as an Fe—Ni—Co (cobalt) alloy or an Fe—Ni alloy. For example, an ingot made of an Fe—Ni—Co alloy or the like is rolled into a lump. It is produced by applying a conventionally known metal working method such as a punching method or the like. The lead terminal 7 and the metal member 2a are attached to the side wall 2 by setting the lead terminal 7 and the metal member 2a in a predetermined position in the mold in advance when the base 1 is molded by the transfer molding method or the injection molding method. The lead terminal 7 is embedded in the side wall 2 so that one end protrudes inside the side wall 2 and the other end protrudes outside the side wall 2, and the metal member 2 a In the state where the lower main surface and both side surfaces of the metal member 2a are embedded in the upper surface of the part 2, they are integrally attached to the base body 1, respectively.
[0029]
One end portion of the lead terminal 7 on the inner side of the side wall portion 2 protrudes inside the side wall portion 2, and an electrical connection means 6 such as a bonding wire is connected to the upper surface of the one end portion. The other end of the lead terminal 7 outside the side wall 2 protrudes outside the side wall 2, and the other end is connected to an external electric circuit.
[0030]
Further, the lead terminal 7 is preferably coated with a predetermined thickness (1 to 20 μm) on the exposed surface by a plating method with a metal such as Ni or gold (Au) having good conductivity and excellent corrosion resistance. In addition to effectively preventing the oxidative corrosion of the lead terminal 7, the connection between the external lead terminal 7 and the electrical connection means 6 and the connection between the lead terminal 7 and the external electrical circuit are good, and a highly reliable connection is achieved. realizable.
[0031]
The thickness of the metal member 2a of the substrate 1 is preferably 0.1 to 3 mm. If it is less than 0.1 mm, it is difficult to increase the contact area between the side surface of the metal member 2a and the side wall portion 2, and the adhesion between the metal member 2a and the side wall portion 2 tends to be small. On the other hand, when the thickness exceeds 3 mm, the volume of the metal member 2a having a density higher than that of the resin constituting the side wall portion 2 is increased, and it is difficult to reduce the weight of the semiconductor storage package.
[0032]
Further, the metal member 2a of the base body 1 is preferably such that the distance between its lower main surface and the upper surface of the side wall portion 2 is 0.1 to 1 times the thickness of the metal member 2a. If it is less than 0.1 times, the area of the contact surface between the metal member 2a and the side wall portion 2 becomes small, and the adhesion strength between the metal member 2a and the side wall portion 2 tends to become small. Moreover, when it exceeds 1 time, since the upper side main surface of the metal member 2a is located below the upper surface of the side wall portion 2, the upper surface of the side wall portion 2 becomes concave, and the metal member 2a and the lid 9 are connected via solder. At the time of joining, voids are easily generated in the concave portion, and the solder is easily broken.
[0033]
Further, the metal member 2a of the base body 1 is preferably configured such that the distance between the inner surface side end of the side wall portion 2 and the inner surface of the side wall portion 2 is 0.1 to 5 mm. If it is less than 0.1 mm, when the lid body 9 is bonded to the metal member 2a via solder, the solder protrudes to the inner surface side of the side wall portion 2 to electrically connect the semiconductor element 5 and the lead terminal 7. It becomes easier to contact the electrical connection means 6 and the possibility of short-circuiting the electrical connection means 6 increases. Moreover, the thickness of the side wall part 2 between the inner surface of the side wall part 2 and the inner surface side end of the side wall part 2 of the metal member 2a becomes thin, and the side wall part 2 is likely to be cracked or chipped. On the other hand, if it exceeds 5 mm, the width of the upper surface of the side wall 2 is increased, and the size of the base 1 is increased accordingly, so that it is difficult to reduce the size of the semiconductor package.
[0034]
Further, the metal member 2a of the base body 1 is preferably configured such that the distance between the outer surface side end of the side wall portion 2 and the outer surface of the side wall portion 2 is 0.1 to 5 mm. When the thickness is less than 0.1 mm, the thickness of the side wall 2 between the outer surface of the side wall 2 and the outer surface side end of the side wall 2 of the metal member 2a becomes thin, and the side wall 2 is likely to be cracked or chipped. . On the other hand, if it exceeds 5 mm, the width of the upper surface of the side wall 2 is increased, and the size of the base 1 is increased accordingly, so that it is difficult to reduce the size of the semiconductor package.
[0035]
Further, the metal member 2a of the base body 1 has the lower main surface and both side faces of the metal member 2a embedded in the upper surface of the side wall portion 2 of the base body 1, and the lid 9 is connected to the exposed portion via solder. The
[0036]
The metal member 2a of the substrate 1 is preferably coated with a predetermined thickness (1 to 20 μm) on the exposed surface by a plating method with a metal such as Ni or Au having good conductivity and excellent corrosion resistance. In addition, it is possible to effectively prevent the oxidative corrosion of the metal member 2a, and it is possible to realize a highly reliable joint by making the joint with the lid 9 via the solder good.
[0037]
The lid 9 joined to the metal member 2a of the base 1 is made of a thermosetting resin such as an epoxy resin, a resin such as an engineering plastic such as PPS or LCP, a metal such as an Fe-Ni alloy, an Fe-Ni-Co alloy, or the like. Alumina (Al₂O_Three) Quality sintered body (alumina ceramics), mullite (3Al₂O_Three・ 2SiO₂) Quality sintered body, silicon nitride (Si_ThreeN_Four) It is a flat plate made of ceramics such as a sintered material, and is joined to the upper main surface of the metal member 2a via solder. When the lid 9 is made of ceramics, a metallized layer made of tungsten (W), molybdenum (Mo), manganese (Mn) or the like is deposited on the joint portion on the lower surface of the lid 9. By closing the inside of the side wall portion 2 with the lid body 9, the semiconductor element 5 is accommodated in a container composed of the base body 1 and the lid body 9.
[0038]
In another embodiment of the present invention, the lid 9 joined to the metal member 2a of the base 1 is made of a thermosetting resin such as an epoxy resin, or a resin such as engineering plastic such as PPS or LCP. As shown, a metal layer 9a made of copper (Cu), silver (Ag), Au, or the like is deposited on the entire outer periphery of the lower surface. Then, the metal layer 9a and the metal member 2a are joined together with solder, and the inside of the side wall portion 2 is closed with the lid 9, so that the semiconductor element 5 is contained in the container constituted by the base body 1 and the lid 9. Be contained.
[0039]
With this configuration, the metal layer 9 a is firmly soldered to the metal member 2 a of the base 1. As a result, when the semiconductor package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element 5 inside the semiconductor device can be operated normally and stably over a long period of time.
[0040]
In order to adhere the metal layer 9a to the lid 9, chemical Cu plating with a thickness of 0.1 to 20 μm is applied to the outer peripheral portion of the lower surface of the resin lid 9 molded by the transfer molding method or the injection molding method. Then, a metal layer 9a is provided by depositing a metal such as Ni or Au to a thickness of 0.05 to 20 μm by a plating method. The metal layer 9a can be deposited by any method other than the plating method, such as sputtering, vacuum deposition, ion plating, transfer, and conductive agent coating.
[0041]
Further, in another invention of the present invention, the lid body 9 joined to the metal member 2a of the base 1 is made of a thermosetting resin such as an epoxy resin, or a resin such as an engineering plastic such as PPS or LCP, as shown in FIG. As shown, a frame-like metal member 9b covering the metal member 2a of the base 1 is provided on the outer peripheral portion of the lower surface with its upper main surface and side surfaces embedded. In this case, the metal member 2a of the base body 1 and the metal member 9b of the lid body 9 are joined by soldering or welding, and the inside of the side wall portion 2 is closed by the lid body 9 to constitute the base body 1 and the lid body 9. The semiconductor element 5 is accommodated in a container.
[0042]
With this configuration, the metal member 9 b of the lid 9 is firmly soldered or welded to the metal member 2 a of the base 1. Further, since the metal member 9b of the lid 9 and the lid 9 are in contact with the upper main surface of the metal member 9b and both side surfaces thereof, the contact area is increased, and the adhesion between the metal member 9b and the lower surface of the lid 9 is increased. Can be bigger. As a result, when the semiconductor package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element 5 inside the semiconductor device can be operated normally and stably over a long period of time.
[0043]
The metal member 9b of the lid body 9 is made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, an ingot made of an Fe—Ni—Co alloy or the like is conventionally known, such as a rolling method or a punching method. It is produced by applying a metal processing method. The metal member 9b is attached to the lid 9 by setting the metal member 9b in a predetermined position in the mold in advance when the lid 9 is molded by the transfer molding method or the injection molding method. In the state where the lower main surface and both side surfaces of the metal member 9 b are embedded in the lower surface of 9, it is integrally attached to the lid body 9.
[0044]
The thickness of the metal member 9b of the lid 9 is preferably 0.1 to 3 mm. If it is less than 0.1 mm, it is difficult to increase the contact area between the side surfaces of the metal member 9b and the lid 9, and the adhesion between the metal member 9b and the lid 9 tends to be small. On the other hand, when the thickness exceeds 3 mm, the volume of the metal member 9b having a density higher than that of the resin constituting the lid 9 is increased, and it is difficult to reduce the weight of the semiconductor package.
[0045]
The distance between the upper main surface of the metal member 9b of the lid 9 and the lower surface of the lid 9 is preferably 0.1 to 1 times the thickness of the metal member 9b. If it is less than 0.1 times, the area of the contact surface between the metal member 9a and the lid body 9 becomes small, and the adhesion strength between the metal member 9b and the lid body 9 tends to be small. Further, when the ratio exceeds 1, the lower main surface of the metal member 9b is located above the lower surface of the lid body 9, so that the lower surface of the lid body 9 becomes concave, and the metal member 9b of the lid body 9 and the metal of the base 1 When joining the member 2a via solder, a void is easily generated in the concave portion and the solder is easily broken.
[0046]
Furthermore, in another invention of the present invention, as shown in FIG. 5, the lid 9 joined to the metal member 2a of the base 1 has a thermosetting resin such as an epoxy resin at the center and an engineering plastic such as PPS or LCP. And a metal frame body 9c whose inner peripheral surface is in direct contact with the side surface of the lid main body portion 9A and having a lower surface that covers the metal member 2a of the base body 1. It consists of In this case, the metal member 2a of the base body 1 and the metal frame body 9c of the lid body 9 are joined by soldering or welding, and the inside of the side wall portion 2 is closed by the lid body 9 to constitute the base body 1 and the lid body 9. The semiconductor element 5 is accommodated in the container to be processed.
[0047]
With this configuration, the metal frame 9 c is firmly soldered or welded to the metal member 2 a of the base 1. Moreover, since the outer peripheral part of the cover body 9 is comprised by the metal frame 9c, the cover body 9 whole can be made hard to distort, and even if a sudden temperature change etc. arise, the cover body 9 and the side wall part 2 It is difficult to generate stress at the joint portion, and it is possible to effectively prevent the lid body 9 from being detached from the side wall portion 2 and cracks from being generated in the lid body 9 and the side wall portion 2. As a result, when the semiconductor package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element 5 inside the semiconductor device can be operated normally and stably over a long period of time.
[0048]
The metal frame 9c is made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, a conventionally known metal working method such as a rolling method or a punching method is used for an ingot made of an Fe—Ni—Co alloy or the like. It is produced by giving. The metal frame 9c is attached to the lid body 9A by setting the metal frame 9c in a predetermined position in the mold in advance when the lid 9 is molded by the transfer molding method or the injection molding method. Thus, the inner peripheral surface of the metal frame 9c is provided in close contact with the side surface of the lid body 9A.
[0049]
Further, the exposed portions of the metal layer 9a, the metal member 9b of the lid 9 and the metal frame 9c are made of a metal such as Ni or Au in order to improve wettability with solder and to effectively prevent oxidative corrosion. It is good to deposit by the plating method with the thickness of 0.05-20 micrometers.
[0050]
For joining the lid 9 to the upper main surface of the metal member 2a of the base 1, it is preferable to use a joining material made of metal solder in order to effectively prevent moisture from entering the joint. When the melting temperature of the bonding material is very high, the side wall 2 is softened, so that it is difficult to fix the optical fiber 10. Therefore, solder having a low melting temperature is used as the bonding material. Specifically, a solder having a low melting point such as Sn (tin) -Pb (lead) solder (melting point 190 ° C.), Sn—Ag solder (melting point 221 ° C.) or the like is used as the bonding material. Then, for example, a solder paste obtained by adding and mixing an organic solvent and a solvent to powder such as Sn—Pb solder is preliminarily printed on the metal member 2a embedded in the upper surface of the side wall portion 2 by a conventionally known screen printing method. In addition, the lid body 9 is disposed thereon, and the lid body 9 is joined to the upper surface of the side wall portion 2 via the metal member 2a by heating the solder paste.
[0051]
In order to effectively prevent moisture from entering from the outside at the joint portion between the side wall portion 2 and the lid 9, it is necessary to strengthen the joint between them. Therefore, the solder after bonding has a thickness of 0.01 to 0.2 mm between the lid 9 and the metal member 2a of the base 1, and the base 1 and the lid 9 (in the case of having the metal frame 9c, the lid body portion). Difference in thermal expansion coefficient from 9A) is 30 × 10^-6/ ° C. or less is preferable.
[0052]
When the thickness of the solder is less than 0.01 mm, it is difficult to obtain sufficient joint strength at the joint portion between the side wall portion 2 and the lid body 9. When the solder thickness exceeds 0.2 mm, it becomes difficult to join the upper surface of the side wall portion 2 and the lower surface of the lid body 9 in parallel. It is difficult to obtain strength.
[0053]
In addition, the base 1 and the lid 9 have, for example, a base 1 having a thermal expansion coefficient of 18.4 × 10.^-6It is made of orthocresol novolac type epoxy resin at / ° C, and the cover 9 has a thermal expansion coefficient of 5.8 × 10^-6In the case of Fe-Ni alloys that are at / ° C., their thermal expansion coefficient difference is 30 × 10^-6/ ° C. or less, which is preferable. Difference in thermal expansion coefficient is 30 × 10^-6When the temperature exceeds / ° C., the joint is peeled off, and cracks or cracks are likely to occur in the side wall 2, the lid 9, and the solder near the joint.
[0054]
As for the joining of the side wall 2 and the lid 9, in the case of a metallic lid 9 made of Fe-Ni alloy, Fe-Ni-Co alloy or the like, the lid 9 is provided with a metal member 9b. In this case, or when the lid 9 is provided with the metal frame 9c, the metal member 2a on the upper surface of the side wall 2 may be welded by seam welding or the like. Also in this case, it is possible to effectively prevent moisture from entering from the outside.
[0055]
In the semiconductor device of the present invention, the semiconductor element 5 mounted and fixed on the mounting portion 3 of the semiconductor package of the present invention is electrically connected to the lead terminal 7 and embedded in the upper surface of the side wall portion 2 of the base 1. The lid 9 is soldered or welded to the frame-shaped metal member 2a. In the semiconductor device of the present invention, by using the semiconductor package of the present invention, the intrusion of moisture into the inside is suppressed, and the operability of the semiconductor element 5 becomes very excellent. It can be operated.
[0056]
【Example】
Embodiments of a semiconductor element storage package and a semiconductor device according to the present invention will be described below.
[0057]
Example 1
The semiconductor device shown in FIG. 2 was configured as follows. A base body 1 having a lead terminal 7 made of an Fe—Ni alloy and a metal member 2 a has a thermal expansion coefficient of 35.8 × 10 6.^-6It was produced by transfer molding an epoxy resin at / ° C. At this time, the substantially rectangular parallelepiped substrate 1 is 10 mm long × 8 mm wide × 4 mm high, and the width of the side wall 2 is 2 mm. The metal member 2a is 9.5 mm long × 7.5 mm wide × 0.25 mm thick. And the width | variety of the frame part was a frame shape of 1 mm.
[0058]
Next, a substrate 4 made of alumina ceramics is placed on the placement portion 3 on the bottom surface of the concave portion 1b of the base 1 and fixed with a resin adhesive, and the semiconductor element 5 made of LD is formed on the conductor layer on the upper surface of the substrate 4. Were mounted by soldering, and the electrode on the upper surface of the semiconductor element 5 was connected to the lead terminal 7 via a bonding wire.
[0059]
The frame-shaped metal member 2a embedded in the upper surface of the side wall 2 has a length of 10 mm × width 8 mm × thickness 1 mm and an Fe—Ni alloy (thermal expansion coefficient 5.8 × 10 6).^-620 samples were manufactured by joining the outer peripheral portion of the lower surface of the lid body 9 made of / ° C. with Sn-Pb solder having a thickness of 0.01 mm (Sample A).
[0060]
As a comparative example, a base body 1 having a lead terminal 7 made of an Fe—Ni alloy has a thermal expansion coefficient of 35.8 × 10 6.^-6It was produced by transfer molding an epoxy resin at / ° C. At this time, the shape of the substantially rectangular parallelepiped substrate 1 was the same as that of the sample A. Then, after mounting the semiconductor element 5 in the same manner as in the sample A, an Fe—Ni alloy (thermal expansion coefficient 5.8 × 10 6) having a length of 10 mm × width 8 mm × thickness 1 mm is formed on the upper surface of the side wall 2.^-620 samples were manufactured by adhering the outer peripheral portion of the lower surface of the lid 9 made of epoxy resin with an adhesive made of epoxy resin (sample B).
[0061]
About these, when set in a temperature cycle test device ("TSA-201S" manufactured by Tabai Espec Co., Ltd.) and added one cycle (-7 hours) of temperature cycle (-40 ° C to 85 ° C), all 20 samples B In addition, peeling occurred between the substrate 1 and the adhesive. In this sample B, moisture easily enters the semiconductor package. On the other hand, in sample A, peeling did not occur between the substrate 1 and the solder, and it was found that sample A of the present invention was good.
[0062]
(Example 2)
Next, in the sample A, each bonding state when the substrate 1 was set to have three types of thermal expansion coefficients was examined. That is, the thermal expansion coefficient is 18.4 × 10^-6Made of epoxy resin at / ° C (sample A1) and thermal expansion coefficient of 35.8 × 10^-6/ Equipped with epoxy resin (sample A) and thermal expansion coefficient of 40.3 × 10^-6Three types of samples (sample A2) made of epoxy resin at / ° C were prepared. Then, the metal member 2a on the upper surface of the side wall 2 of the substrate 1 and an Fe—Ni alloy (thermal expansion coefficient 5.8 × 10^-6The outer peripheral portion of the lower surface of the lid body 9 composed of / ° C) was joined with Sn-Pb solder having a thickness of 0.01 mm, and 60 samples of a total of 20 of the above three types were produced. These were set in a temperature cycle test apparatus (“TSA-201S” manufactured by Tabay Espec Co., Ltd.), and one cycle (−40 ° C. to 85 ° C.) was added (7 hours). The results are shown in Table 1.
[0063]
[Table 1]

[0064]
From Table 1, a defective product in which cracks such as cracks occurred in the substrate 1 and / or solder occurred only in the sample A2. These have a difference in thermal expansion coefficient between the base 1 and the lid 9 of 30 × 10.^-6This is probably because the temperature exceeds / ° C. In this case, moisture easily enters the semiconductor package. Therefore, as in samples A1 and A, the difference in thermal expansion coefficient between the base 1 and the lid 9 is 30 × 10.^-6It was found that it was good to be below / ° C.
[0065]
(Example 3)
Next, using Sample A, the bonding state when the thickness of the solder was set to 8 types was examined (see Table 2 below). Then, the metal member 2a of the base body 1 and the lid body 9 were joined with Sn-Pb solder, and a total of 160 samples of 20 of the above eight types were manufactured. These were set in a temperature cycle test apparatus (“TSA-201S” manufactured by Tabay Espec Co., Ltd.), and one cycle (−40 ° C. to 85 ° C.) was added for 7 cycles. The results are shown in Table 2.
[0066]
[Table 2]

[0067]
From Table 2, peeling occurred between the substrate 1 and the solder in the samples A3, A8, and A9. In these samples, moisture easily enters the semiconductor package. Therefore, it was found that the thickness of the solder should be 0.01 to 0.2 mm.
[0068]
(Example 4)
Alumina ceramics (coefficient of thermal expansion 7 × 10^-6The metallized layer made of W is formed on the outer peripheral portion of the lower surface of the lid 9, and the metallized layer is bonded to the metal member 2a of the side wall 2 of the base 1 via solder. As a result of manufacturing the semiconductor device and performing a temperature cycle test in the same manner as described above, the same result as described above was obtained.
[0069]
(Example 5)
Fe-Ni alloy (coefficient of thermal expansion 5.8 × 10^-6As a result of manufacturing a semiconductor device bonded to the metal member 2a of the base 1 by welding the lid body 9 made of / ° C. and performing a temperature cycle test in the same manner as described above, the same result as above was obtained. It was.
[0070]
(Example 6)
Next, epoxy resin (coefficient of thermal expansion 5.8 × 10^-6/ 9) was subjected to a degreasing treatment, an etching treatment with an aqueous KOH solution, a neutralization washing treatment with an aqueous HCl solution, and a surface activation treatment with a catalyst. Thereafter, the lid body 9 is immersed in a chemical Cu plating solution to form a Cu plating layer having a thickness of 2 μm on the outer peripheral portion of the lower surface of the lid body 9, and further Ni plating having a thickness of 5 μm is formed on the surface thereof by a plating method. A metal layer 9a (external size is 10 mm long × 8 mm wide × 1 mm thick and the width of the frame portion is 0.2 mm) was formed by sequentially depositing a layer and an Au plating layer having a thickness of 1 μm. The semiconductor devices (sample C and samples C1 to C9) shown in FIG. 3 were produced in the same manner as in Examples 1 to 3 except that this lid 9 was used, and the temperature cycle test was conducted in the same manner as in Examples 1 to 3. I did it. The results are shown in Tables 3 and 4.
[0071]
[Table 3]

[0072]
[Table 4]

[0073]
From Tables 3 and 4, the same results as in Examples 1 to 3 were obtained. Compared to the conventional substrate 1 in which the lid 9 was bonded with an adhesive made of an epoxy resin (sample B), Sample C was found to be good. The difference in thermal expansion coefficient between the base 1 and the lid 9 is 30 × 10.^-6It was found that it was good to be below / ° C. Furthermore, it has been found that the thickness of the solder should be 0.01 to 0.2 mm.
[0074]
(Example 7)
Next, as shown in FIG. 4, a metal member 9b having an outer size of 9.5 mm in length, 7.5 mm in width, 0.25 mm in thickness, and 1 mm in the width of the frame is embedded in the upper main surface and side surfaces on the lower surface. Epoxy resin attached integrally (thermal expansion coefficient 5.8 × 10^-6/ 9) was produced by transfer molding. Then, Ni and Au having excellent wettability with solder were sequentially deposited on the exposed portion of the metal member 9b on the lower surface of the lid 9 to a total thickness of 3 μm by a plating method. A semiconductor device (samples D and D1 to D9) was manufactured in the same manner as in Examples 1 to 3 except that this lid 9 was used, and a temperature cycle test was conducted in the same manner as in Examples 1 to 3. The results are shown in Tables 5 and 6.
[0075]
[Table 5]

[0076]
[Table 6]

[0077]
From Tables 5 and 6, the same results as in Examples 1 to 3 were obtained, and compared with the conventional substrate 1 in which the lid body 9 was bonded with an adhesive made of an epoxy resin (sample B). Sample D was found to be good. The difference in thermal expansion coefficient between the base 1 and the lid 9 is 30 × 10.^-6It was found that it was good to be below / ° C. Furthermore, it has been found that the thickness of the solder should be 0.01 to 0.2 mm.
[0078]
(Example 8)
Next, as shown in FIG. 5, an epoxy resin (thermal expansion coefficient of 5.8) is integrally attached with a metal frame 9c having an outer size of 10 mm in length, 8 mm in width, 1 mm in thickness, and 1 mm in width of the frame portion. × 10^-6/ 9) was produced by transfer molding. A semiconductor device (samples E and E1 to E9) was manufactured in the same manner as in Examples 1 to 3 except that the lid 9 was joined to the metal member 2a on the side wall 2 of the base 1 by welding. A temperature cycle test was conducted in the same manner as in. The results are shown in Tables 7 and 8.
[0079]
[Table 7]

[0080]
[Table 8]

[0081]
From Tables 7 and 8, the same results as in Examples 1 to 3 were obtained. Compared to the conventional substrate 1 in which the lid body 9 was bonded with an adhesive made of an epoxy resin (sample B), Sample E was found to be good. The difference in thermal expansion coefficient between the base 1 and the lid 9 is 30 × 10.^-6It was found that it was good to be below / ° C. Furthermore, it has been found that the thickness of the solder should be 0.01 to 0.2 mm.
[0082]
Example 9
Further, the lid 9 used in Examples 7 and 8 was welded to produce a semiconductor device joined to the metal member 2a of the base 1, and as a result of performing a temperature cycle test in the same manner as above, the same as above. Results were obtained.
[0083]
The present invention is not limited to the above-described embodiments and examples, and various modifications may be made without departing from the scope of the present invention. For example, in the above embodiment, the optical fiber 10 is attached to the side wall 2 of the base 1 as shown in FIG. 1, but the semiconductor element 5 is an LSI, IC, etc., and the optical fiber 10 is unnecessary. In this case, it is not necessary to form the through hole 1a in the side wall portion 2. Further, the width of the metal layer 9 a, the metal member 9 b of the lid 9, or the metal frame 9 c may be smaller than the width of the metal member 2 a of the base 1. In this case, when the metal layer 9a, the metal member 9b or the metal frame 9c of the lid 9 and the metal member 2a of the base 1 are joined together by solder, the metal layer 9a, the metal member 9b of the lid 9 or the metal A continuous meniscus of solder is formed on the exposed side surface of the frame body 9c, so that the bonding strength is improved and the intrusion of moisture can be more effectively prevented.
[0084]
【The invention's effect】
The package for housing a semiconductor element of the present invention has a frame shape that is substantially the same shape as the upper surface of the side wall portion of the base, and the width of the frame portion is smaller than the width of the upper surface of the side wall portion. Since the metal member having the surface and both side surfaces embedded is provided, the metal member is firmly soldered to a metal lid or a ceramic lid having a metallized layer attached to the joint. Further, since the metal member and the side wall are in contact with the lower main surface and the side surface of the metal member, the contact area is increased, and the adhesion between the metal member and the upper surface of the side wall can be increased. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0085]
Since the semiconductor element storage package of the present invention is provided with a resin lid having a metal layer covering the metal member of the base on the outer periphery of the lower surface on the upper surface of the side wall portion, the above-mentioned The metal layer is firmly soldered to the metal member of the base. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0086]
The package for housing a semiconductor element of the present invention is made of a resin in which a frame-like metal member covering the metal member of the base is embedded in the upper surface of the side wall and the outer peripheral portion of the lower surface is embedded in the upper main surface and both side surfaces. Since the lid body is provided, the metal member of the lid body is firmly soldered or welded to the metal member of the base body. Further, since the metal member of the lid and the lid are in contact with the upper main surface of the metal member and both side surfaces thereof, the contact area is increased, and the adhesion between the metal member and the lower surface of the lid can be increased. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0087]
The package for housing a semiconductor element of the present invention has an inner periphery on the side surface of the lid body portion, the center portion having a resin lid body portion on the upper surface of the side wall portion and a lower surface covering the metal member of the base body on the outer peripheral portion. Since the lid is formed of the metal frame whose surface is in direct contact with the entire circumference, the metal frame constituting the lid is firmly soldered or welded to the metal member of the base. In addition, since the outer periphery of the lid is made of a metal frame, the entire lid can be made difficult to be distorted, and even if a sudden temperature change or the like occurs, the stress at the joint between the lid and the side wall It is possible to effectively prevent the lid from coming off from the side wall or cracking from occurring in the lid or the side wall. As a result, when the semiconductor element storage package is formed with a semiconductor device, moisture can be effectively prevented from entering the semiconductor device, and the semiconductor element inside the semiconductor device can operate normally and stably over a long period of time. Become.
[0088]
In the semiconductor device of the present invention, the semiconductor element mounted and fixed on the mounting portion of the semiconductor element storage package of the present invention is electrically connected to the lead terminal, and the lid member is soldered to the metal member of the base. Therefore, the bonding using the semiconductor element storage package of the present invention is highly reliable.
[0089]
In the semiconductor device of the present invention, the thickness of the solder is 0.01 to 0.2 mm, and the difference in thermal expansion coefficient between the base and the lid is 30 × 10.^-6Since it is / ° C. or lower, the solder bonding between the side wall portion of the base and the lid body becomes stronger and more reliable.
[0090]
In the semiconductor device of the present invention, the semiconductor element mounted and fixed on the mounting portion of the semiconductor element storage package of the present invention is electrically connected to the lead terminal, and the metal member of the base is connected to the lower surface of the substrate. A resin-made lid body in which an upper main surface and both side surfaces are embedded in a frame-like metal member that covers the metal member of the base body on the outer periphery, or the above-mentioned central portion is a resin-made lid body portion The lid body, which has a lower surface that covers the metal member of the base body, and a metal frame body in which the inner circumferential surface is in direct contact with the side surface of the lid body portion, is joined by welding. Therefore, the bonding reliability using the semiconductor element storage package of the present invention is high.
[0091]
In the semiconductor device of the present invention, the semiconductor element mounted and fixed on the mounting portion of the semiconductor element storage package of the present invention is electrically connected to the lead terminal, and the metal member of the base is made of a metal lid. Since these are joined by welding, the joining reliability using the package for housing a semiconductor element of the present invention is high.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an example of an embodiment of a package for housing a semiconductor element of the present invention.
2 is a cross-sectional view of the semiconductor element storage package of FIG. 1;
FIG. 3 is a cross-sectional view showing another example of the embodiment of the package for housing a semiconductor element of the present invention.
FIG. 4 is a cross-sectional view showing another example of the embodiment of the lid in the package for housing semiconductor elements of the present invention.
FIG. 5 is a cross-sectional view showing another example of the embodiment of the lid in the package for housing semiconductor elements of the present invention.
FIG. 6 is a cross-sectional view showing an example of a conventional package for housing semiconductor elements.
[Explanation of symbols]
1: Substrate
1b: recess
2: Side wall
2a: Metal member
3: Placement section
5: Semiconductor element
7: Lead terminal
9: Lid
9a: Metal layer
9b: Metal member
9c: Metal frame
9A: Lid body part

Claims

A resin base provided with a mounting portion for mounting a semiconductor element on the bottom surface of the recess formed on the upper surface;
The frame has a frame shape that is substantially the same shape as the upper surface of the side wall of the substrate, the width of the frame is smaller than the width of the upper surface of the side wall, and the lower main surface and both side surfaces are embedded in the upper surface of the side wall. A metal member,
A resin lid provided on the upper surface of the side wall,
A lead terminal embedded in the side wall portion so that one end portion protrudes inside the side wall portion and the other end portion protrudes outside the side wall portion ;
A frame-like metal member in which the upper main surface and both side surfaces are embedded is provided on the outer peripheral portion of the lower surface of the lid, and the metal member embedded in the upper surface of the side wall and the lower surface of the lid A package for semiconductor storage, wherein a metal member is joined.

A resin base provided with a mounting portion for mounting a semiconductor element on the bottom surface of the recess formed on the upper surface;
The frame has a frame shape that is substantially the same shape as the upper surface of the side wall of the substrate, the width of the frame is smaller than the width of the upper surface of the side wall, and the lower main surface and both side surfaces are embedded in the upper surface of the side wall. A metal member,
A lid provided on the upper surface of the side wall,
A lead terminal embedded in the side wall portion so that one end portion protrudes inside the side wall portion and the other end portion protrudes outside the side wall portion ;
The cover body includes a resin cover body portion, the side surface of the lid body portion, the inner peripheral surface is composed of a direct contact with the metal frame over the entire circumference,
A package for semiconductor storage, wherein the metal member and the metal frame are joined.

A package for housing a semiconductor element according to claim 1 or 2,
A semiconductor element placed and fixed on the placement portion of the semiconductor element storage package;
A lead terminal that is electrically connected to the semiconductor element and embedded in the side wall so that one end protrudes inside the side wall and the other end protrudes outside the side wall;
A semiconductor device comprising: the metal member embedded in the upper surface of the side wall portion; and the lid body joined via solder.

4. The solder according to claim 3, wherein the solder has a thickness of 0.01 to 0.2 mm, and a difference in thermal expansion coefficient between the base and the lid is 30 × 10 ⁻⁶ / ° C. or less. Semiconductor device.

A package for housing a semiconductor element according to claim 1 or 2,
A semiconductor element electrically connected to the lead terminal and mounted and fixed on the mounting portion of the semiconductor element storage package;
A semiconductor device comprising: the metal member embedded in the upper surface of the side wall portion; and the welded lid.