JP3932405B2 - Method of joining silicon carbide heating elements - Google Patents
Method of joining silicon carbide heating elements Download PDFInfo
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- JP3932405B2 JP3932405B2 JP14080297A JP14080297A JP3932405B2 JP 3932405 B2 JP3932405 B2 JP 3932405B2 JP 14080297 A JP14080297 A JP 14080297A JP 14080297 A JP14080297 A JP 14080297A JP 3932405 B2 JP3932405 B2 JP 3932405B2
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- sic
- silicon carbide
- pressure
- temperature
- joining
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- 238000010438 heat treatment Methods 0.000 title claims description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 15
- 239000002131 composite material Substances 0.000 claims description 14
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- Ceramic Products (AREA)
- Resistance Heating (AREA)
Description
【０００１】
【発明の属する技術分野】
本発明は、炭化珪素発熱体の発熱部と端部の接合方法に関するものである。
【０００２】
【従来の技術】
従来、発熱体を製造するには、棒状のＳｉＣの両端にＳｉを含浸させ端部とする方法が採られていた。しかしこの方法でつくられた発熱体の端部の比抵抗は発熱部の１０％程度であり、該端部はそれだけ電力の損失となっていた。そこで省エネルギーの観点からこの電力損失を少なくするために、比抵抗の低い端部をつくり、これと発熱部を接合させるという技術が開発された。すなわち、該発熱体は、ＳｉＣからなる発熱部と、ＳｉＣ−Ｓｉの複合材からなる端部とで構成されたものである。この技術により端部の電力損失を少なくすることができた。上述のようなＳｉＣとＳｉＣ−Ｓｉの複合材を接合する方法としては、ＳｉＣ，Ｃ，バインダーからなる接着剤を接合面に塗布して、窒素雰囲気中で高温（１９００〜２１００℃）に加熱し、溶融したＳｉと接着剤中のＣと反応させる反応焼結接合が行われている。しかしこの方法は、処理温度が１９００〜２１００℃と高温なため、黒鉛炉等の特殊な装置が必要となってくる。またこの処理温度を低くする方法としては、炉内を減圧するという方法（特開昭６３−１７２６８号公報）がある。しかしこの方法だと圧力が低すぎる場合、端部のＳｉが蒸発してしまい、比抵抗が高くなってしまう。端部の比抵抗が上がれば発熱体として信頼性が損なわれてしまう。
【０００３】
【発明が解決しようとする課題】
上述のように従来の接合法では、高温、高真空で処理できる炉のような特殊な設備がなければ、接合できないという問題があった。また低温で処理すると発熱体の端部の性能に問題があった。本発明の目的は黒鉛炉等の特殊な設備を必要とすることなく、かつ端部の性能を損ずることなしに、充分な強度を得ることができる接合方法を提供することにある。
【０００４】
【課題を解決するための手段】
本発明の接合方法は、ＳｉＣからなる発熱部とＳｉＣ−Ｓｉの複合材からなる端部の接合面に、ＳｉＣ，Ｃ，バインダーからなる接着剤を塗布し、これらを一定の減圧下（１５０〜１５００Ｐａ）に制御して、加熱（１４５０℃〜１６００℃）し接合することを特徴とする。
【０００５】
【発明の実施の形態】
本発明によれば、従来より５００℃低い温度で処理することができる。もし圧力が１５００Ｐａを超えると、反応焼結が進まず接合部分の強度が不足してしまう。また１５Ｐａ未満では端部に含まれているＳｉが蒸発し比抵抗が上がってしまい、発熱体としての用をなさない。そこで１５〜１５００Ｐａの圧力範囲で熱処理をすれば、強度不足の点も、端部の比抵抗が上がる点も解決できる。このように処理温度を下げることができることにより、黒鉛炉のような特殊な装置を使用する必要がなくなり、また接合に必要な電力量が少なくなり、大幅なコストダウンが可能となる。
【０００６】
【実施例】
本発明を実施例により更に詳しく説明する。
（実施例１〜３、参考例１）ＳｉＣからなる発熱部（外径φ２０、内径φ１０、全長３００ｍｍ）とＳｉＣ−Ｓｉの複合材からなる端部（外径φ２０、内径φ１０、全長３００ｍｍ）を、ＳｉＣ，Ｃ，バインダーからなる接着剤で接合した。この接合体を圧力１５〜１５００Ｐａ、温度１５００℃で３時間処理し試験のサンプルとした。
（比較例１）実施例１〜４と同様の接合体を圧力３０００Ｐａ、温度１５００℃で３時間処理し比較用のサンプルとした。表１に実施例１〜３、参考例１と比較例１の曲げ強度の結果を示す。
【０００７】
【表１】
（実施例５〜７、参考例２）ＳｉＣ−Ｓｉの複合材（遊離Ｓｉ量１２〜１７％、外径φ２０×内径φ１０×全長１００ｍｍ）を圧力１５〜１５００Ｐａ、温度１５００℃で３時間処理し、試験のサンプルとした。
（比較例２）実施例５〜７、参考例２と同じ複合材を圧力１．５Ｐａ、温度１５００℃で３時間処理し比較用のサンプルとした。表２に実施例５〜７、参考例２と比較例２のＳｉ含有率と比抵抗を示す。
【０００８】
【表２】
【０００９】
【発明の効果】
以上のとおり、本発明によれば炭化珪素発熱体の発熱部と端部を接合する際に、圧力を１５０〜１５００Ｐａの範囲で調整することにより、加熱処理温度は、従来より５００℃低い１４５０〜１６００℃の温度で行うことができる。このように低い温度で処理できるため、黒鉛炉といった特別な装置を必要としなくなった。また低い温度で処理できるため、電力消費量も少なくなり大幅なコストダウンが図れるようになる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for joining a heat generating portion and an end portion of a silicon carbide heating element.
[0002]
[Prior art]
Conventionally, in order to manufacture a heating element, a method has been adopted in which both ends of a rod-like SiC are impregnated with Si to form end portions. However, the specific resistance of the end portion of the heating element produced by this method is about 10% of that of the heating portion, and the end portion is a loss of electric power. Therefore, in order to reduce this power loss from the viewpoint of energy saving, a technology has been developed in which an end portion having a low specific resistance is formed and this is joined to a heat generating portion. That is, the heating element is composed of a heating part made of SiC and an end part made of a SiC-Si composite material. This technique can reduce the power loss at the end. As a method for joining the composite material of SiC and SiC-Si as described above, an adhesive composed of SiC, C, and a binder is applied to the joining surface and heated to a high temperature (1900 to 2100 ° C.) in a nitrogen atmosphere. In addition, reactive sintering bonding is performed in which molten Si reacts with C in the adhesive. However, this method requires a special apparatus such as a graphite furnace because the processing temperature is as high as 1900 to 2100 ° C. Further, as a method for lowering the treatment temperature, there is a method of reducing the pressure in the furnace (Japanese Patent Laid-Open No. 63-17268). However, with this method, when the pressure is too low, the Si at the end evaporates and the specific resistance becomes high. If the specific resistance at the end increases, the reliability of the heating element is impaired.
[0003]
[Problems to be solved by the invention]
As described above, the conventional bonding method has a problem that bonding cannot be performed without special equipment such as a furnace capable of processing at high temperature and high vacuum. Moreover, when it processed at low temperature, there existed a problem in the performance of the edge part of a heat generating body. An object of the present invention without requiring special equipment graphite furnace or the like, and the performance of the end without loss sly that is to provide a joining method capable of obtaining a sufficient strength.
[0004]
[Means for Solving the Problems]
In the bonding method of the present invention, an adhesive composed of SiC, C, and a binder is applied to a joint surface between an exothermic portion composed of SiC and an end portion composed of a SiC-Si composite material, and these are applied under a certain reduced pressure ( 150 to It is characterized by being heated (1450 ° C. to 1600 ° C.) and joined by being controlled at 1500 Pa).
[0005]
DETAILED DESCRIPTION OF THE INVENTION
According to the present invention, the treatment can be performed at a temperature lower by 500 ° C. than the conventional one. If the pressure exceeds 1500 Pa, the reaction sintering does not proceed and the strength of the joint portion is insufficient. On the other hand, if it is less than 15 Pa , Si contained in the end portion evaporates and the specific resistance increases, so that it cannot be used as a heating element. Therefore, if heat treatment is performed in a pressure range of 15 to 1500 Pa, both the insufficient strength and the specific resistance of the end portion can be solved. Since the processing temperature can be lowered in this manner, it is not necessary to use a special apparatus such as a graphite furnace, and the amount of electric power necessary for joining is reduced, which enables a significant cost reduction.
[0006]
【Example】
The present invention will be described in more detail with reference to examples.
(Examples 1 to 3, Reference Example 1 ) An exothermic part made of SiC (outer diameter φ20, inner diameter φ10, overall length 300 mm) and an end part made of a composite material of SiC-Si (outer diameter φ20, inner diameter φ10, overall length 300 mm) Bonding was performed using an adhesive composed of SiC , C , and binder. The joined body was treated at a pressure of 15 to 1500 Pa and a temperature of 1500 ° C. for 3 hours to obtain a test sample.
(Comparative Example 1) The same joined body as in Examples 1 to 4 was treated at a pressure of 3000 Pa and a temperature of 1500 ° C for 3 hours to obtain a sample for comparison. Table 1 shows the bending strength results of Examples 1 to 3, Reference Example 1 and Comparative Example 1 .
[0007]
[Table 1]
(Examples 5 to 7, Reference Example 2 ) A SiC-Si composite material (free Si content 12 to 17%, outer diameter φ20 × inner diameter φ10 × total length 100 mm) was treated at a pressure of 15 to 1500 Pa and a temperature of 1500 ° C. for 3 hours. A test sample was obtained.
Comparative Example 2 The same composite material as in Examples 5 to 7 and Reference Example 2 was treated at a pressure of 1.5 Pa and a temperature of 1500 ° C. for 3 hours to obtain a sample for comparison. Table 2 shows the Si content and specific resistance of Examples 5 to 7, Reference Example 2 and Comparative Example 2 .
[0008]
[Table 2]
[0009]
【The invention's effect】
As described above, according to the present invention, when the heating portion and the end portion of the silicon carbide heating element are joined, the heat treatment temperature is 1450 to 1500 lower by 500 ° C. than before by adjusting the pressure in the range of 150 to 1500 Pa. It can be performed at a temperature of 1600 ° C. Since processing can be performed at such a low temperature, a special apparatus such as a graphite furnace is not required. Moreover, since the treatment can be performed at a low temperature, the power consumption is reduced and the cost can be significantly reduced.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14080297A JP3932405B2 (en) | 1997-04-24 | 1997-04-24 | Method of joining silicon carbide heating elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14080297A JP3932405B2 (en) | 1997-04-24 | 1997-04-24 | Method of joining silicon carbide heating elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10297976A JPH10297976A (en) | 1998-11-10 |
| JP3932405B2 true JP3932405B2 (en) | 2007-06-20 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14080297A Expired - Fee Related JP3932405B2 (en) | 1997-04-24 | 1997-04-24 | Method of joining silicon carbide heating elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3932405B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5187579B2 (en) * | 2008-12-01 | 2013-04-24 | 東海高熱工業株式会社 | Method for manufacturing end portion of silicon carbide heating element |
-
1997
- 1997-04-24 JP JP14080297A patent/JP3932405B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10297976A (en) | 1998-11-10 |
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