JP3960643B2 - Optical element manufacturing method - Google Patents
Optical element manufacturing method Download PDFInfo
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- JP3960643B2 JP3960643B2 JP21339296A JP21339296A JP3960643B2 JP 3960643 B2 JP3960643 B2 JP 3960643B2 JP 21339296 A JP21339296 A JP 21339296A JP 21339296 A JP21339296 A JP 21339296A JP 3960643 B2 JP3960643 B2 JP 3960643B2
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- multilayer film
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- 230000003287 optical effect Effects 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 18
- 230000000737 periodic effect Effects 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000002679 ablation Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 41
- 239000000758 substrate Substances 0.000 description 28
- 239000011521 glass Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
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- 125000006850 spacer group Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は光通信や光計測の分野において、偏光ビームスプリッタやカップリンググレーティング等として使用される回折格子やホログラムとして用いられる回折型の光学素子、或いは複屈折素子や光散乱体等として使用されるフォトニッククリスタル等の光学素子の製造方法に関する。
【0002】
【従来の技術】
図8(a)に示すような、誘電体多層膜に1方向に周期的な凹凸を形成した回折格子が、偏光ビームスプリッタとして優れた特性を有することが知られている。(Rong-Chungら、OPTICS LETTERS Vol.21, No.10, p761, 1996年)
また、図8(b)に示すような、誘電体多層膜に2方向に周期的な凹凸を形成した回折格子が、3次元のフォトニッククリスタルとして提案されている。(E. Yablonovitch, Journal of Optical Society of America B Vol.10, No.2, p283, 1993年)
【0003】
誘電体多層膜自体は、ミラーなどとして現在様々な分野で使用されており、製造方法としては、電子ビーム蒸着法や加熱蒸発法あるいはスパッタ法などの技術が既に確立されている。
【0004】
また、誘電体多層に周期的な凹凸を形成する技術も、超LSIなどのパターニング技術と類似な技術であることから、このパターニング技術を誘電体多層膜に適用することで誘電体多層膜に周期的な凹凸を形成した回折格子を製造できる。
具体的なパターニング技術としては、フッ酸等のエッチャントを用いたウェットエッチング(化学エッチング)、或いはリアクティブイオンエッチング等のドライエッチング(物理エッチング)が考えられる。
【0005】
【発明が解決しようとする課題】
上記の成膜法とエッチング法を適用することで、回折格子等を製造できるが、ウェットエッチングにあっては、エッチャントの管理と処理の問題があり、ドライエッチングにあっては真空容器等の設備が必要になり装置自体が大掛かりとなり、更に複雑なフォトリソグラフィー技術、具体的にはレジスト塗布、乾燥、露光、ベーキング、現像等によってパターンマスクを形成しなければならず効率的でない。
【0006】
更に、2種以上の層が積層された誘電体多層膜をエッチングする場合には、各層のエッチングレートに差があるので、きれいな断面形状を得にくい。
【0007】
【課題を解決するための手段】
上記課題を解決するため本発明に係る光学素子の製造方法は、ガラス基板等の基材表面に誘電率の異なる2種以上の層からなる誘電体多層膜を形成し、この誘電体多層膜に対し強度分布を有するレーザ光を照射し、誘電体多層膜にレーザ光のエネルギーを吸収させることで溶融・蒸発若しくはアブレーションを起こさせて誘電体多層膜の一部をレーザ光の強度に応じて除去することで、光の波長程度の格子定数をもつ誘電体凸部を周期的に配列して基材表面に残すようにした。
【0008】
ここで、前記誘電体多層膜を構成する材料としては、レーザ光に対して溶融・蒸発若しくはアブレーションを起こす閾値が基材よりも低く且つ膜の付着力が大きな材料が好ましく、具体的には、酸化珪素、酸化チタン、酸化セリウム、酸化ゲルマニウム、フッ化マグネシウム、フッ化カルシウム、酸化タンタル等が適当である。
また誘電体多層膜を構成する各膜の形態は、ガラス(非晶質)、単結晶あるいは多結晶のいずれでもよい。
【0009】
また、前記レーザ光は例えば1方向に周期的な強度分布を有するものとする。この1方向に周期的な強度分布を有するレーザ光は、フェイズマスク若しくは2本のレーザ光を干渉させることによって得ることができる。
また、前記レーザ光は例えば2方向に周期的な強度分布を有するものとする。この2方向に周期的な強度分布を有するレーザ光は、3本以上のレーザ光を干渉させることによって得ることができる。
【0010】
レーザ光としては、KrFなどのエキシマレーザあるいはNd−YAGレーザ、Ti:Al2O3レーザおよびその高調波、色素レーザなどを使用し、好ましくは、加工しようとする誘電体多層膜の反射率が低い領域のレーザ光を使用する。
【0011】
【発明の実施の形態】
(実施例1)
先ず、基材表面に誘電体多層膜を形成する手順について説明する。
基材としては、ホウ珪酸系ガラス基板(BK7ガラス基板)を使用し、成膜前に基板のアルコール洗浄を行い、この基材を、蒸着装置内で300℃に加熱し、図1に示すようなSiO2とTiO2とが交互に9層積層した誘電体多層膜を形成した。
【0012】
SiO2の原料としては、直径2インチのSiO2ディスクを使用し、SiO2の一層あたりの厚さは約104nmとした。
また、TiO2の原料としては、Ti2O3の顆粒を使用し、これを酸素雰囲気下で蒸発させ成膜した。TiO2の一層あたりの厚さは約50nmとした。
【0013】
上記によって作製した誘電体多層膜は、いわゆる誘電体多層膜ミラーと同じ構成であり、約600nmあたりに反射率のピークを持つミラーとなる。
分光スペクトルを測定した結果、300〜400nmの波長の光に対しては、反射率がそれほど大きくなく、レーザ光が十分膜を透過することができることがわかったので、この範囲の波長をもつレーザ光を使用することとした。
【0014】
具体的には、Nd:YAGレーザの第三高調波(355nm)を使用した。尚、レーザ光のエネルギーは、レーザ光源から出た時点で、350mJ/pulse、パルス幅は5nsec、繰り返し周波数は5Hzとした。また、ビーム直径は約7mmであった。
【0015】
このレーザ光を図2に示すように、ビームスプリッターで2本に分け、それぞれ異なる光路を通って基材上で再び重ね合うように調整する。明瞭な干渉縞を基材上に形成するためには、2本のビームの光路長がほとんど等しいこと、ならびにそれぞれのビームのエネルギーがほぼ等しいことが必要である。
【0016】
本実施例の場合、2本のビームの光路長の差は、2cm以下であり、これは、レーザ光のパルスの空間的な長さ、150cmに比べて十分に小さく、明瞭な干渉縞を形成することができた。また、本実施例の場合、2本のビームのエネルギーは、それぞれの光路のミラー損失の違いなどから、1:2程度の比となったが、この程度のエネルギーの違いがあっても干渉縞の明瞭さは失われない。
なお、エネルギー密度を増大させるため、レーザ光を焦点距離200mmのレンズで絞り込んで基材上でのビームサイズが約2mmになるようにした。
【0017】
また、本実施例は、大気中でレーザ照射を行ったので、レンズ焦点位置に空気放電が発生する。この放電の影響を除去するために、ガラス基材の位置は、レンズの焦点位置よりもレンズよりになるように調整した。したがって、図2では、レンズ前の2本のビームを平行に描いてあるが、実際はわずかに角度をもたせてレンズに入射させている。
【0018】
このように、光学系を調整した後、先に作製した誘電体多層膜をレーザ光の干渉縞が形成された位置にセットし、数パルスレーザ光を照射すると、図3(a),(b)及び図4に示すように、レーザ光のエネルギーが誘電体多層膜に吸収され、溶融・蒸発若しくはアブレーションを起こさせる閾値を超えた箇所において、レーザ光の強度に応じて誘電体多層膜が除去され、多数の誘電体凸部が1方向に沿って周期的に配列された回折格子が形成された。
ここで、図3(a)はレーザ光照射によって形成された誘電体凸部の光学顕微鏡写真(1000倍)、(b)は同写真に基づいて作成した図、図4は同誘電体多層膜表面の拡大斜視図である。
【0019】
ここで、注意しておく必要があるのは、本実施例の場合、誘電体多層膜を構成する層のうち、SiO2層は355nmのレーザ光に対して吸収係数が低く、TiO2に比べて蒸発しにくいということである。にもかかわらず、本実施例では、SiO2もTiO2とともに蒸発しているのは、上下のTiO2層が蒸発する際にSiO2も加熱され一緒に蒸発しているためである。
【0020】
このように、誘電体多層膜の各層のレーザ光に対する溶融・蒸発若しくはアブレーションを起こす閾値が異なる場合でも、本発明の回折格子の製造方法は実施できるが、このような条件下では、膜の損傷を低減するために、膜の付着力が強いことが必要である。この条件を満たす膜構成として、SiO2やTiO2の他に、酸化セリウム、酸化ゲルマニウム、フッ化マグネシウム、フッ化カルシウム、酸化タンタルが考えられる。また、同じ膜構成であっても、たとえばイオンアシスト電子ビーム蒸着のように、製造方法によって膜の付着力を向上させることもできる。
【0021】
尚、上記実施例では2本のレーザ光による干渉縞を使用したが、これに限ることなく、3本あるいはそれ以上のレーザ光の干渉縞も、本発明の回折格子の製造方法に使用できる。この場合は、作製される回折格子の形状は図5に示すように直交する2方向に沿って周期性をもつ回折格子となる。即ち、一種の3次元フォトニッククリスタルとなる。
【0022】
また、同じようなフォトニッククリスタルは、図2の光学系を用い基板を90°回転させ、異なる方向から2度加工を施すことでも実現できる。
【0023】
(実施例2)
実施例1と同じ方法で誘電体多層膜を形成したホウ珪酸系ガラス基板に対し、図6に示す装置を用いて回折格子を製造した。ここで、図6はフェイズマスク用いた本発明方法で回折格子を製造する装置の概略図、図7(a)はフェイズマスクの作用を説明した図、(b)は同フェイズマスクを介してガラス基板にレーザ光を照射している状態を示す図、(c)はレーザ加工されたガラス基板を示す図である。
【0024】
具体的には、上記のガラス基板の上に誘電体多層膜を成膜した面に、スペーサを介して回折格子を形成したフェイズマスクを備えた基板を配置し、レーザ光を照射した。
【0025】
フェイズマスクにレーザ光が入射すると、図7(a)に示すように、主として+1次、0次、−1次を含む複数の回折光が出射し、これらの回折光の干渉によりフェイズマスクの出射側の極近傍に周期的な光の強度分布が得られる。
ここで、本実施例のフェイズマスクは回折格子周期:1055nm、回折格子深さ:約250nm、サイズ:10mm×5mm(QPS Technology Inc.製 Canada)を使用した。
そして、この周期的な強度分布が形成された領域に、図7(b)に示すように、薄膜を成膜したガラス基板をセットした。その結果、図7(c)に示すように、当該周期的な光強度に応じて薄膜が蒸発或いはアブレーションし、光強度の周期と同一の周期をもつ回折格子がガラス基板上に薄膜を加工した形で形成された。
【0026】
尚、使用したレーザ光は、実施例1と同様にNd:YAGレーザの第3高調波である355nmの光とした。パルス幅は約10nsec、繰り返し周波数は5Hzであった。またレーザ光の1パルスあたりのエネルギーは、レーザのQスイッチのタイミングを変えることで調整が可能であり、110mJ/pulseのエネルギーで、ビーム直径は約5mmであった。加工に適するように、レーザのエネルギー密度を増大させるため、レーザ光を焦点距離250nmのレンズで絞り込んでガラス基板上でのビームサイズが約2mmになるようにした。
【0027】
また、本実施例にあってはスペーサによってフェイズマスクとガラス基板との間隔が約50μmとなるようにしている。これは、ガラス基板表面からの蒸発物がフェイズマスクに付着するのを極力防ぐためであり、この間隔自体は任意である。例えば+1次光と−1次光とが重なっている範囲内ならば、フェイズマスクとガラス基板を密着させても回折格子は作製できるし、フェイズマスクとガラス基板との間に150μm程度の厚さの石英板を挟み密着させてレーザ照射を行った場合も、本実施例と同様に回折格子が作製できた。フェイズマスクは繰り返し使用されるものであり、その汚れを防ぐことは重要であり、したがってスペーサを介在させることは有効な手段である。
【0028】
【発明の効果】
以上に説明したように本発明によれば、基材表面に誘電体多層膜を形成した後に、この誘電体多層膜に対し強度分布を有するレーザ光を照射し、前記誘電体多層膜の一部をレーザ光の強度に応じて除去し、他の部分を光の波長程度の格子定数をもつ周期的に配列される誘電体凸部として残すことで、回折格子やフォトニッククリスタルを製造するようにしたので、フォトリソグラフィやエッチングなどの複雑な工程を経ることなく、簡便に回折格子等を製造することができる。
【0029】
誘電体多層膜のレーザによる蒸発過程においては、各層の溶融・蒸発若しくはアブレーションを起こす閾値が異なっていても、上下の層が蒸発する際に、中間の層の蒸発が起きるので、通常のエッチングに比べ、各層の違いが現れにくく、誘電体凸部側面に段差が生じにくい。
【図面の簡単な説明】
【図1】基材表面に誘電体多層膜を形成した状態を示す拡大斜視図
【図2】レーザ干渉を利用した本発明方法で回折格子を製造する装置の概略図
【図3】(a)はレーザ光照射によって形成された誘電体凸部の光学顕微鏡写真(1000倍)、(b)は同写真に基づいて作成した図
【図4】本発明方法にて作製した1方向に周期的な凹凸を形成した回折格子の斜視図
【図5】本発明方法にて作製した2方向に周期的な凹凸を形成した回折格子の斜視図
【図6】フェイズマスク用いた本発明方法で回折格子を製造する装置の概略図
【図7】(a)はフェイズマスクの作用を説明した図、(b)は同フェイズマスクを介してガラス基板にレーザ光を照射している状態を示す図、(c)はレーザ加工されたガラス基板を示す図
【図8】(a)先行技術文献中に示されている1方向に周期的な凹凸を形成した回折格子の斜視図、(b)は先行技術文献中に示されている2方向に周期的な凹凸を形成した回折格子の斜視図[0001]
BACKGROUND OF THE INVENTION
INDUSTRIAL APPLICABILITY The present invention is used in the fields of optical communication and optical measurement, as a diffraction grating used as a polarization beam splitter, a coupling grating, etc., a diffractive optical element used as a hologram, a birefringent element, a light scatterer, etc. The present invention relates to a method for manufacturing an optical element such as a photonic crystal.
[0002]
[Prior art]
As shown in FIG. 8A, it is known that a diffraction grating in which a dielectric multilayer film has periodic unevenness in one direction has excellent characteristics as a polarizing beam splitter. (Rong-Chung et al., OPTICS LETTERS Vol.21, No.10, p761, 1996)
Further, as shown in FIG. 8B, a diffraction grating in which periodic irregularities are formed in two directions on a dielectric multilayer film has been proposed as a three-dimensional photonic crystal. (E. Yablonovitch, Journal of Optical Society of America B Vol.10, No.2, p283, 1993)
[0003]
The dielectric multilayer film itself is currently used in various fields as a mirror, and as a manufacturing method, techniques such as an electron beam evaporation method, a heating evaporation method, or a sputtering method have already been established.
[0004]
In addition, since the technology for forming periodic irregularities in a dielectric multilayer is also a technology similar to patterning technology such as VLSI, applying this patterning technology to a dielectric multilayer film results in periodicity on the dielectric multilayer film. Diffraction gratings with typical irregularities can be manufactured.
As a specific patterning technique, wet etching (chemical etching) using an etchant such as hydrofluoric acid or dry etching (physical etching) such as reactive ion etching can be considered.
[0005]
[Problems to be solved by the invention]
Diffraction gratings and the like can be manufactured by applying the film formation method and the etching method described above, but there are problems in the management and processing of etchants in wet etching, and equipment such as a vacuum vessel in dry etching. And the apparatus itself becomes large, and the pattern mask must be formed by more complicated photolithography techniques, specifically resist coating, drying, exposure, baking, development, etc., which is not efficient.
[0006]
Furthermore, when etching a dielectric multilayer film in which two or more layers are laminated, there is a difference in the etching rate of each layer, and it is difficult to obtain a clean cross-sectional shape.
[0007]
[Means for Solving the Problems]
In order to solve the above-described problems, the optical element manufacturing method according to the present invention forms a dielectric multilayer film composed of two or more layers having different dielectric constants on the surface of a substrate such as a glass substrate, and the dielectric multilayer film. On the other hand, the laser beam having an intensity distribution is irradiated and the energy of the laser beam is absorbed into the dielectric multilayer film to cause melting / evaporation or ablation, and a part of the dielectric multilayer film is removed according to the laser beam intensity. As a result, the dielectric convex portions having a lattice constant of the order of the wavelength of the light are periodically arranged and left on the substrate surface.
[0008]
Here, the material constituting the dielectric multilayer film is preferably a material having a lower threshold value for causing melting / evaporation or ablation with respect to laser light than the base material and having a large film adhesion force. Silicon oxide, titanium oxide, cerium oxide, germanium oxide, magnesium fluoride, calcium fluoride, tantalum oxide and the like are suitable.
The form of each film constituting the dielectric multilayer film may be glass (amorphous), single crystal, or polycrystalline.
[0009]
The laser beam has a periodic intensity distribution in one direction, for example. This laser light having a periodic intensity distribution in one direction can be obtained by interfering with a phase mask or two laser lights.
The laser beam has a periodic intensity distribution in two directions, for example. Laser light having a periodic intensity distribution in these two directions can be obtained by interfering with three or more laser lights.
[0010]
As the laser light, an excimer laser such as KrF, an Nd-YAG laser, a Ti: Al 2 O 3 laser and its harmonics, a dye laser, or the like is used. Preferably, the dielectric multilayer film to be processed has a reflectivity. Use low-area laser light.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Example 1
First, a procedure for forming a dielectric multilayer film on the surface of the substrate will be described.
As the base material, a borosilicate glass substrate (BK7 glass substrate) is used, the substrate is cleaned with alcohol before film formation, and this base material is heated to 300 ° C. in a vapor deposition apparatus, as shown in FIG. A dielectric multilayer film in which nine layers of SiO 2 and TiO 2 were alternately laminated was formed.
[0012]
As a raw material of SiO 2 , a SiO 2 disk having a diameter of 2 inches was used, and the thickness per layer of SiO 2 was about 104 nm.
Further, Ti 2 O 3 granules were used as a raw material for TiO 2 , and this was evaporated in an oxygen atmosphere to form a film. The thickness per layer of TiO 2 was about 50 nm.
[0013]
The dielectric multilayer film produced as described above has the same configuration as a so-called dielectric multilayer film mirror, and becomes a mirror having a reflectance peak at about 600 nm.
As a result of measuring the spectrum, it was found that the reflectance is not so large for light with a wavelength of 300 to 400 nm, and the laser light can sufficiently pass through the film. It was decided to use.
[0014]
Specifically, the third harmonic (355 nm) of an Nd: YAG laser was used. The energy of the laser beam was 350 mJ / pulse, the pulse width was 5 nsec, and the repetition frequency was 5 Hz when it was emitted from the laser light source. The beam diameter was about 7 mm.
[0015]
As shown in FIG. 2, the laser beam is divided into two beams by a beam splitter and adjusted so as to overlap again on the substrate through different optical paths. In order to form clear interference fringes on the substrate, it is necessary that the optical path lengths of the two beams are almost equal, and the energy of each beam is substantially equal.
[0016]
In this embodiment, the difference between the optical path lengths of the two beams is 2 cm or less, which is sufficiently smaller than the spatial length of the laser light pulse, 150 cm, and forms clear interference fringes. We were able to. In the present embodiment, the energy of the two beams has a ratio of about 1: 2 due to the difference in mirror loss between the respective optical paths. The clarity of is not lost.
In order to increase the energy density, the laser beam was narrowed down with a lens having a focal length of 200 mm so that the beam size on the substrate was about 2 mm.
[0017]
In this embodiment, since laser irradiation is performed in the atmosphere, air discharge occurs at the lens focal position. In order to remove the influence of this discharge, the position of the glass substrate was adjusted to be closer to the lens than the focal position of the lens. Therefore, in FIG. 2, the two beams before the lens are drawn in parallel, but in actuality, they are incident on the lens with a slight angle.
[0018]
In this way, after adjusting the optical system, the dielectric multilayer film produced previously is set at the position where the interference fringes of the laser beam are formed and irradiated with several pulses of laser light. As shown in FIG. 4 and FIG. 4, the dielectric multilayer film is removed in accordance with the intensity of the laser beam at a location where the energy of the laser beam is absorbed by the dielectric multilayer film and exceeds a threshold value causing melting, evaporation or ablation. As a result, a diffraction grating was formed in which a large number of dielectric protrusions were arranged periodically along one direction.
Here, FIG. 3A is an optical micrograph (1000 times) of a dielectric convex portion formed by laser light irradiation, FIG. 4B is a diagram created based on the photo, and FIG. 4 is the dielectric multilayer film. It is an expansion perspective view of the surface.
[0019]
Here, it should be noted that in the case of the present embodiment, among the layers constituting the dielectric multilayer film, the SiO 2 layer has a lower absorption coefficient with respect to the laser beam of 355 nm, compared with TiO 2 . It is difficult to evaporate. Nevertheless, in this embodiment, SiO 2 is evaporated together with TiO 2 because SiO 2 is also heated and evaporated together when the upper and lower TiO 2 layers are evaporated.
[0020]
As described above, the method for manufacturing a diffraction grating according to the present invention can be carried out even when the threshold value causing melting, evaporation or ablation of each layer of the dielectric multilayer film is different, but under such conditions, the film is damaged. In order to reduce this, it is necessary that the adhesion of the film is strong. In addition to SiO 2 and TiO 2 , cerium oxide, germanium oxide, magnesium fluoride, calcium fluoride, and tantalum oxide are conceivable as film configurations that satisfy this condition. Moreover, even if it is the same film | membrane structure, the adhesive force of a film | membrane can also be improved with a manufacturing method like ion assist electron beam vapor deposition, for example.
[0021]
In the above embodiment, interference fringes by two laser beams are used. However, the present invention is not limited to this, and interference fringes of three or more laser beams can also be used in the method for manufacturing a diffraction grating of the present invention. In this case, the shape of the produced diffraction grating is a diffraction grating having periodicity along two orthogonal directions as shown in FIG. That is, it becomes a kind of three-dimensional photonic crystal.
[0022]
A similar photonic crystal can be realized by rotating the substrate by 90 ° using the optical system of FIG. 2 and processing it twice from different directions.
[0023]
(Example 2)
A diffraction grating was manufactured using the apparatus shown in FIG. 6 on the borosilicate glass substrate on which the dielectric multilayer film was formed in the same manner as in Example 1. Here, FIG. 6 is a schematic view of an apparatus for manufacturing a diffraction grating by the method of the present invention using a phase mask, FIG. 7 (a) is a diagram for explaining the action of the phase mask, and FIG. The figure which shows the state which has irradiated the laser beam to the board | substrate, (c) is a figure which shows the glass substrate by which laser processing was carried out.
[0024]
Specifically, a substrate provided with a phase mask in which a diffraction grating was formed via a spacer was placed on the surface on which the dielectric multilayer film was formed on the glass substrate, and laser light was irradiated.
[0025]
When laser light is incident on the phase mask, as shown in FIG. 7A, a plurality of diffracted lights mainly including + 1st order, 0th order, and −1st order are emitted, and the phase mask emits light due to interference of these diffracted lights. A periodic light intensity distribution is obtained in the vicinity of the side pole.
Here, as the phase mask of this example, a diffraction grating period: 1055 nm, a diffraction grating depth: about 250 nm, and a size: 10 mm × 5 mm (Canada made by QPS Technology Inc.) were used.
Then, as shown in FIG. 7B, a glass substrate on which a thin film was formed was set in a region where this periodic intensity distribution was formed. As a result, as shown in FIG. 7 (c), the thin film evaporated or ablated in accordance with the periodic light intensity, and a diffraction grating having the same period as the light intensity period processed the thin film on the glass substrate. Formed in shape.
[0026]
The laser beam used was 355 nm light, which is the third harmonic of the Nd: YAG laser, as in Example 1. The pulse width was about 10 nsec and the repetition frequency was 5 Hz. The energy per pulse of the laser light can be adjusted by changing the timing of the Q switch of the laser, and the beam diameter was about 5 mm at an energy of 110 mJ / pulse. In order to increase the energy density of the laser so as to be suitable for processing, the laser beam was narrowed down with a lens having a focal length of 250 nm so that the beam size on the glass substrate was about 2 mm.
[0027]
In this embodiment, the distance between the phase mask and the glass substrate is set to about 50 μm by the spacer. This is to prevent evaporation from the surface of the glass substrate from adhering to the phase mask as much as possible, and this interval itself is arbitrary. For example, if the + 1st order light and the −1st order light overlap, the diffraction grating can be produced even if the phase mask and the glass substrate are brought into close contact with each other, and the thickness between the phase mask and the glass substrate is about 150 μm. In the case where laser irradiation was performed with a quartz plate sandwiched between and closely attached, a diffraction grating could be produced in the same manner as in this example. The phase mask is used repeatedly, and it is important to prevent the contamination of the phase mask. Therefore, interposing a spacer is an effective means.
[0028]
【The invention's effect】
As described above, according to the present invention, after forming the dielectric multilayer film on the surface of the substrate, the dielectric multilayer film is irradiated with laser light having an intensity distribution, and a part of the dielectric multilayer film is irradiated. Is produced in accordance with the intensity of the laser beam, and other portions are left as dielectric convex portions periodically arranged having a lattice constant of the order of the wavelength of the light, thereby producing a diffraction grating or a photonic crystal. Therefore, a diffraction grating or the like can be easily manufactured without going through complicated steps such as photolithography and etching.
[0029]
In the evaporation process of the dielectric multilayer film by laser, even if the thresholds causing melting / evaporation or ablation of each layer are different, evaporation of the intermediate layer occurs when the upper and lower layers evaporate. In comparison, the difference between the layers is less likely to appear, and a step is less likely to occur on the side surface of the dielectric convex portion.
[Brief description of the drawings]
FIG. 1 is an enlarged perspective view showing a state in which a dielectric multilayer film is formed on the surface of a substrate. FIG. 2 is a schematic view of an apparatus for manufacturing a diffraction grating by the method of the present invention using laser interference. Fig. 4 is an optical micrograph (1000x) of a dielectric convex portion formed by laser light irradiation, and Fig. 4 (b) is a diagram created based on the photo. Fig. 4 is periodic in one direction produced by the method of the present invention. FIG. 5 is a perspective view of a diffraction grating having periodic irregularities formed in two directions, produced by the method of the present invention. FIG. 6 is a diagram of a diffraction grating formed by a method of the present invention using a phase mask. FIG. 7A is a diagram for explaining the action of a phase mask, FIG. 7B is a diagram showing a state in which a glass substrate is irradiated with laser light through the phase mask, and FIG. ) Is a diagram showing a laser processed glass substrate. [Fig. 8] (a) Prior art The perspective view of the diffraction grating which formed the periodic unevenness | corrugation in 1 direction shown in literature, (b) is the perspective view of the diffraction grating which formed the periodic unevenness | corrugation in 2 directions shown in prior art literature. Figure
Claims (4)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21339296A JP3960643B2 (en) | 1996-08-13 | 1996-08-13 | Optical element manufacturing method |
| PCT/JP1997/002806 WO1998006676A1 (en) | 1996-08-13 | 1997-08-11 | LASER MACHINING METHOD FOR GlASS SUBSTRATE, DIFFRACTION TYPE OPTICAL DEVICE FABRICATED BY THE MACHINING METHOD, AND METHOD OF MANUFACTURING OPTICAL DEVICE |
| EP97934765A EP0959051A4 (en) | 1996-08-13 | 1997-08-11 | Laser machining method for glass substrate, diffraction type optical device fabricated by the machining method, and method of manufacturing optical device |
| US09/284,269 US6291797B1 (en) | 1996-08-13 | 1997-08-11 | Laser machining method for glass substrate, diffraction type optical device fabricated by the machining method, and method of manufacturing optical device |
| US09/898,239 US6645603B2 (en) | 1996-08-13 | 2001-07-03 | Laser processing method to a glass substrate and an optical diffraction element obtained thereby, and a method for manufacturing optical elements |
| US10/622,517 US6924457B2 (en) | 1996-08-13 | 2003-07-18 | Laser processing method to a class substrate and an optical diffraction element obtained thereby, and a method for manufacturing optical elements |
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| JP21339296A JP3960643B2 (en) | 1996-08-13 | 1996-08-13 | Optical element manufacturing method |
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| JPH1059746A JPH1059746A (en) | 1998-03-03 |
| JP3960643B2 true JP3960643B2 (en) | 2007-08-15 |
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| JP3288976B2 (en) | 1998-08-07 | 2002-06-04 | 彰二郎 川上 | Polarizer and its manufacturing method |
| TWI228179B (en) | 1999-09-24 | 2005-02-21 | Toshiba Corp | Process and device for producing photonic crystal, and optical element |
| JP2002333508A (en) * | 2001-05-10 | 2002-11-22 | Dainippon Printing Co Ltd | Manufacturing method of anti-reflective material |
| JP4731759B2 (en) * | 2001-08-09 | 2011-07-27 | 彰 ▲さい▼藤 | Chromogen |
| JP4570007B2 (en) * | 2001-09-26 | 2010-10-27 | 大日本印刷株式会社 | Method for forming minute condenser lens |
| JP2004062148A (en) * | 2002-06-04 | 2004-02-26 | Canon Inc | Optical component and method of manufacturing the same |
| JP4054330B2 (en) * | 2002-09-27 | 2008-02-27 | キヤノンマシナリー株式会社 | Periodic structure creation method and surface treatment method |
| JP2007108190A (en) * | 2004-01-22 | 2007-04-26 | Nikon Corp | Photonic crystal and method for producing photonic crystal |
| DE102004015142B3 (en) * | 2004-03-27 | 2005-12-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing optical components |
| US20080253411A1 (en) * | 2004-04-16 | 2008-10-16 | D.K. And E.L. Mc Phail Enterprises Pty Ltd. | Optically Active Matrix with Void Structures |
| JP2005352334A (en) * | 2004-06-14 | 2005-12-22 | Dainippon Printing Co Ltd | Light diffraction structure transfer sheet and manufacturing method thereof |
| JP6007830B2 (en) * | 2012-03-26 | 2016-10-12 | 旭硝子株式会社 | Transmission diffraction element |
| JP2013047838A (en) * | 2012-10-30 | 2013-03-07 | Dainippon Printing Co Ltd | Method for manufacturing antireflection material |
| JP6562014B2 (en) * | 2017-02-20 | 2019-08-21 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
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