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JP3971675B2 - Electroless plating equipment - Google Patents
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JP3971675B2 - Electroless plating equipment - Google Patents

Electroless plating equipment Download PDF

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JP3971675B2
JP3971675B2 JP2002202119A JP2002202119A JP3971675B2 JP 3971675 B2 JP3971675 B2 JP 3971675B2 JP 2002202119 A JP2002202119 A JP 2002202119A JP 2002202119 A JP2002202119 A JP 2002202119A JP 3971675 B2 JP3971675 B2 JP 3971675B2
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electroless plating
tank
plating
circulation
reserve tank
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JP2004043876A (en
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敏 川島
有一 小山
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Meltex Inc
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Meltex Inc
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Description

【0001】
【発明の属する技術分野】
本発明は、無電解めっき装置に係り、特に微小面積の被めっき物へのめっきを可能とする無電解めっき装置に関する。
【0002】
【従来の技術】
一般的な無電解めっきでは、被めっき物のめっき面積はcm2からm2のオーダーであり、1cm2以下の微小面積をもつものは、無電解めっき液に浮遊する微粒子である。この微粒子上で無電解めっき反応が進行すると、無電解めっき液を消費しつつ粒子が巨大化してめっき槽内に沈降し、その後、めっき槽内に金属が析出する核となって、無電解めっき液の安定性を著しく下げる主要因となる。
このため、従来の無電解めっき液は、重金属や含硫黄有機化合物、含窒素有機化合物等の析出抑制効果をもつ安定剤を添加して、微粒子への金属析出を防止するような組成となっている。
【0003】
また、従来の無電解めっき装置は、循環流路中にろ過器を配設し、無電解めっき液を循環ろ過して微粒子を捕集し、めっき槽内での粒子成長や粒子の沈降を防止するように設計されている。上記のろ過器内では相対的に液流量が多く、捕集された粒子には上記の安定剤が充分供給され、これらが粒子表面に吸着することにより金属析出が抑制される。また、めっき槽についても、オーバーフロー槽の形状、循環量、噴出し口の構造、ろ過器等に改良がなされている(中山郁雄、表面技術、303-307,Vol.42, No.3,1991)。
めっき槽内で不要な無電解めっき反応が進行するもうひとつの要因として、めっき浴温を調整するためのヒーター周囲の局所加熱が挙げられる。ヒーター周囲の無電解めっき液の攪拌が不十分であると、ヒーター周囲の温度が局所的に上昇し、無電解めっき反応が進行し易くなり、この状態が継続すると、ヒーターに金属が析出したり、めっき粒子が発生して無電解めっき液の安定性を著しく下げる要因となる。このような局所加熱を防止するためにも、無電解めっき液の攪拌、充分な液循環が求められ、従来の無電解めっき装置では、めっき槽内で無電解めっき液を流動させることを基本とした設計がなされている。
【0004】
また、浴安定性の向上という観点からは、特開平3−75378号公報に開示されているように、浴成分濃度の高い低温めっき液の循環と、浴成分濃度の低い高温めっき液の循環を併用して、めっき液の温度と濃度を別個に補充することにより、めっき液を不活性状態もしくはそれに近い状態として、循環ラインの配管やポンプに金属が析出するのを防止した無電解めっき装置がある。
このように、被めっき物のめっき面積として、cm2からm2のオーダーを前提としている従来の無電解めっきでは、無電解めっき液組成および無電解めっき装置の機構の両面において、微小面積のめっき析出が抑制されていた。
一方、半導体デバイス製造工程では、LSIの電極は真空成膜法や電気めっき法で形成されているが、電極の微小化、配線密度の増加の伴い、無電解めっき法による電極形成が着目されている。この場合の被めっき物である電極は、大きなもので0.0002cm2、最も小さいものでは0.00005cm2以下まで微細化されてきている。
【0005】
【発明が解決しようとする課題】
このような微小電極の大きさは、上述の従来の無電解めっき液中における異物(微粒子)と同等である。このため、従来の無電解めっき装置において、微小電極をもつ半導体ウエハに無電解めっきを行うと、析出防止効果をもつ安定剤が液流によって微小電極へ過剰に供給され、めっきの形状が悪化したり、最悪の場合、めっきが完全に抑制され析出が停止するという問題がある。したがって、微小電極のような被めっき物への無電解めっきは、めっき槽内の無電解めっき液の流れが限りなく無に近づき、無電解めっき液が静止した状態が好ましい。
しかしながら、めっき槽内の無電解めっき液の流れを静止させると、ヒーター近傍の液温が上昇し、局所加熱によるヒーターへの金属析出が生じたり、無電解めっき液中にめっき粒子が発生し、無電解めっき液の安定性が著しく低下するという問題がある。このため、液循環条件の変化やめっき槽内部への整流板の設置等により、微小電極のような被めっき物への金属析出と局所加熱防止を両立させるような試みがなされているが、未だ好ましい無電解めっき装置を得るに至っていない。
【0006】
また、上述の特開平3−75378号公報に開示されている無電解めっき装置は、1cm2以下の微小面積のめっきでは、浴成分濃度の変化がほとんど認められないため、循環ライン中のめっき液を不活性状態とすることが難しく、浴安定性の向上の有効な対策とは成り得ない。さらに、局所加熱によるヒーターへの金属析出を防止するために、温度が補充されためっき液は所定の流量でめっき槽に循環させることが必要であり、めっき槽内に設けた多孔板等により流速を緩和しても、無電解めっき液の流れを静止状態に近づけることは困難である。
本発明は、上記のような実情に鑑みてなされたものであり、半導体デバイス製造工程における1cm2以下の微小電極のような微小面積の被めっき物へのめっきを可能とする無電解めっき装置を提供することを目的とする。
【0007】
【課題を解決するための手段】
このような目的を達成するために、本発明の無電解めっき装置は、1cm 2 以下の微小面積を被めっき物とする無電解めっき装置であって、被めっき物を投入するめっき槽と、ヒーターが配設されたリザーブ槽と、前記めっき槽から前記リザーブ槽にオーバーフローした無電解めっき液を前記めっき槽に循環させるための第1循環装置と、前記リザーブ槽内の無電解めっき液を循環させ、リザーブ槽内の無電解めっき液を所望の液温に調整するとともに、局所加熱による前記ヒーターへの金属析出や無電解めっき液中でのめっき粒子発生を防止するための第2循環装置とを備え、前記第1循環装置による前記めっき槽の単位面積・単位時間当たりの循環流量は1〜30cm3/cm2・minの範囲であり、前記めっき槽の容量V1と前記リザーブ槽の容量V2との容量比V1/V2が0.1〜1.0の範囲であるような構成とした。
【0008】
また、本発明の好ましい態様として、前記第1循環装置は循環流路中に配設されたポンプと流量計を備えるとともに、該流量計により計測した流速値に基づいて前記ポンプを制御して循環流量を調整するための制御装置を備えるような構成とした。
また、本発明の好ましい態様として、前記第2循環装置はポンプとろ過器を備えるような構成とした。
上記のような本発明では、第1循環装置はめっき槽内の無電解めっき液を静止状態に近い状態で循環させることができ、また、第2循環装置はめっき槽内の無電解めっき液の循環に影響を与えることなくリザーブ槽内の無電解めっき液を循環させることができる。
【0009】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照して説明する。
図1は、本発明の無電解めっき装置の一実施形態を示す概略構成図である。図1において、無電解めっき装置1は、被めっき物を投入するためのめっき槽2と、めっき浴温を調整するためのヒーター4が配設されたリザーブ槽3とを備えている。めっき槽2は、壁部2aの一部に低い壁部2a′を設けたものであり、この壁部2a′から無電解めっき液がオーバーフローするように構成されている。また、リザーブ槽3は、めっき槽2からオーバーフローした無電解めっき液を受ける位置に配設されている。
上記の無電解めっき装置1は、めっき槽2の壁部2a′からリザーブ槽3にオーバーフローした無電解めっき液をめっき槽2に循環させるための第1循環装置6を備えている。この第1循環装置6は、リザーブ槽3の底部近傍からめっき槽2の底部に接続された配管(循環流路)6aと、この配管6aの途中に配設されたポンプ6b、バルブ6cを備えている。
【0010】
また、無電解めっき装置1は、リザーブ槽3内の無電解めっき液を循環させるための第2循環装置を備えている。この第2循環装置8は、リザーブ槽3の底部からリザーブ槽3の略中央部に接続された配管(循環流路)8aと、この配管8aの途中に配設されたポンプ8b、ろ過器8cを備えている。
リザーブ槽3に配設されているヒーター4は、リザーブ槽3内の無電解めっき液の温度を調整するものである。このようなヒーター4は特に制限はなく、例えば、パイプ内にスチーム、温水等を流してパイプに接触している無電解めっき液を加熱したり、パイプ内に冷水等を流してパイプに接触している無電解めっき液を冷却するものであってよい。また、ヒーター4は、リザーブ槽3の外壁を直接あるいは熱媒体を介して間接的に加熱するような構成とすることもできる。
【0011】
上記の第1循環装置6は、例えば、バルブ6cで流量を制御することにより、第2循環装置8とは独立して、リザーブ槽3からめっき槽2に無電解めっき液を所定の循環流量で循環させることができる。リザーブ槽3内の無電解めっき液は、後述するように、ヒーター4と第2循環装置8により所定の液温に調整されているので、第1循環装置6による無電解めっき液の循環によって、めっき槽2内のめっき浴温も所定の温度に調整される。本発明では、この第1循環装置6によるめっき槽2の単位面積・単位時間当たりの循環流量を1〜30cm3/cm2・min、好ましくは4〜12cm3/cm2・minの範囲とする。これにより、めっき槽2内の無電解めっき液を静止状態に近い状態で循環させることができる。このため、無電解めっき液に含有される重金属や含硫黄有機化合物、含窒素有機化合物等の析出抑制効果をもつ安定剤が微小面積の被めっき物に過剰に供給されることが防止され、被めっき物への安定した金属析出が維持され良好な無電解めっきが可能となる。第1循環装置6によるめっき槽2の単位面積・単位時間当たりの循環流量が1cm3/cm2・min未満になると、めっき槽2内のめっき浴温調整が難しくなり、30cm3/cm2・minを超えると、被めっき物への安定した金属析出が阻害され好ましくない。
尚、上述の循環流量のおける「めっき槽の単位面積」とは、めっき槽内面の水平方向の断面積(cm2)で除すことを意味し、この水平方向断面積がめっき槽の深さ方向で均一ではない場合、その平均値を水平方向断面積とする。
【0012】
また、第2循環装置8は、ポンプ8bによってリザーブ槽3の底部からろ過器8cを経由してリザーブ槽3の略中央部に無電解めっき液を循環させることができる。この第2循環装置8によりリザーブ槽3内の無電解めっき液が循環され、リザーブ槽3内の無電解めっき液が所定の液温に調整されるとともに、局所加熱によるヒーター4への金属析出や、無電解めっき液中でのめっき粒子発生が防止され、無電解めっき液の安定性が向上する。
尚、無電解めっき装置1におけるめっき槽2の容量、リザーブ槽3の容量は適宜設定することができ、例えば、めっき槽2の容量V1を10〜100Lの範囲、リザーブ槽3の容量V2を20〜500Lの範囲、両槽の容量比V1/V2を0.1〜1.0の範囲でそれぞれ設定することができる。
また、めっき槽2、リザーブ槽3、第1循環装置6の配管6a、第2循環装置8の配管8aの材質は、例えば、一般のめっき装置で用いられているSUS、テフロン(登録商標)、PP(ポリプロピレン)、PPS(ポリフェニレンサルファイド)等とすることができる。また、上記のろ過器8cは、従来の無電解めっき装置において使用されているものを使用することができ、例えば、メンブレンフィルター等を挙げることができる。
【0013】
図2は、本発明の無電解めっき装置の他の実施形態を示す概略構成図である。図2において、無電解めっき装置11は、第1循環装置7を除いて、上述の無電解めっき装置1と同様であり、共通する部材には同じ部材番号を付し、説明を省略する。
この無電解めっき装置11の第1循環装置7は、リザーブ槽3の底部近傍からめっき槽2の底部に接続された配管(循環流路)7aと、この配管7aの途中に配設されたポンプ7b、流量計7cと、制御装置7dとを備えている。この第1循環装置7では、流量計7cにより計測した配管7aの流速値が制御装置7に送られ、この流速値に基づいて制御装置7dがポンプ7bを制御して循環流量を調整する。この場合も、第1循環装置7によるめっき槽2の単位面積・単位時間当たりの循環流量は1〜30cm3/cm2・min、好ましくは4〜12cm3/cm2・minの範囲とする。上記の制御装置7dは、例えば、パーソナルコンピュータ、プログラマブルコントローラー等を用いることができる。また、第1循環装置7の配管7aの材質は、上述の配管6aと同様とすることができる。
上述の無電解めっき装置1,11は例示であり、本発明はこれらの実施形態に限定されるものではない。
【0014】
【実施例】
次に、具体的実施例を挙げて本発明を更に詳細に説明する。
[実施例]
めっき浴量(オーバーフロー時の槽容量)が20Lであるポリプロピレン製のめっき槽と、容量が40Lであるポリプロピレン製のリザーブ槽とを、めっき槽からオーバーフローした無電解めっき液をリザーブ槽が受ける位置に配設した。上記のリザーブ槽は、ヒーターとしてテフロンヒーター(パイプにテフロン(登録商標)コーティングを施したヒーター)を備えたものとした。
【0015】
上記のリザーブ槽の底部近傍とめっき槽の底部とを接続するようにポリプロピレン製の配管を設け、この配管の途中にポンプ、流量計((株)鷺宮製作所製 KARUMAN ACE)を配設した。さらに、この流量計により計測した配管の流速値に基づいてポンプを制御して循環流量を調整できるように制御装置を配設した。これにより第1循環装置とした。
また、リザーブ槽の底部とリザーブ槽の中央部とを接続するようにポリプロピレン製の配管を設け、この配管の途中にポンプ、ろ過器(メンブレンフィルター)を配設して第2循環装置とした。
これにより、図2に示されるような本発明の無電解めっき装置を得た。
【0016】
次に、上記の無電解めっき装置のめっき槽、リザーブ槽に無電解めっき液(メルテックス(株)製 メルプレートNI−869)を注入した。
次いで、第2循環装置によるリザーブ槽内の無電解めっき液の循環流量を400L/時とし、ヒーターにより加熱して、リザーブ槽内の無電解めっき液の液温を85℃に設定した。また、第1循環装置によるめっき槽の単位面積・単位時間当たりの循環流量を6cm3/cm2・minに設定した。これにより、めっき槽内のめっき浴温は84〜85℃となった。
【0017】
次に、微小面積(0.0001cm2)の被めっき部位を複数備えた被めっき物を準備した。この被めっき物をめっき槽中に20分間浸漬して、微小面積の被めっき部位に無電解めっきを施した。無電解めっきが終了した後、被めっき物をめっき槽から引き上げ、形成されためっきパターンを観察した。その結果、上記の微小面積に厚み約5μmの均一で良好な形状の電極が形成されたことを確認した。尚、リザーブ槽においては、ヒーター付近での局所加熱が防止され、無電解めっき液の安定性は高いものであった。
【0018】
[比較例1]
第1循環装置によるめっき槽の単位面積・単位時間当たりの循環流量を40cm3/cm2・minに設定した他は、実施例1と同様にして、被めっき物への無電解めっきを施した。
形成されためっきパターンを観察した結果、一部に析出不良がみられた。
【0019】
[比較例2]
めっき浴量(オーバーフロー時の槽容量)が130Lであり、ヒーターとしてSUSヒーター(パイプがSUS製のもの)を備えたSUS製のめっき槽と、このめっき槽の底部とめっき槽の中央部とを接続するようにSUS製の配管を設け、この配管の途中にポンプ、ろ過器(メンブレンフィルター)を配設して循環装置とした。これにより、循環系を一系列のみ備えた無電解めっき装置を得た。
この無電解めっき装置のめっき槽に実施例と同じ無電解めっき液を注入し、ヒーターにより加熱してめっき槽内のめっき浴温を85℃とした。ただし、ヒーター近傍の局所加熱を防止するために、めっき槽の単位面積・単位時間当たりの無電解めっき液循環流量を60cm3/cm2・minに設定した。
その後、実施例1と同様にして、被めっき物への無電解めっきを施した。
形成されためっきパターンを観察した結果、微小面積(0.0001cm2)の被めっき部位に析出不良がみられ、形成された電極は形状が異常なものがあり、また、一部にめっきが未析出である電極があった。
【0020】
【発明の効果】
以上詳述したように、本発明によれば被めっき物を投入するめっき槽と、めっき浴温を調整するためのヒーターが配設されたリザーブ槽と、めっき槽からリザーブ槽にオーバーフローした無電解めっき液をめっき槽に循環させるための第1循環装置と、リザーブ槽内の無電解めっき液を循環させるための第2循環装置とを備えた無電解めっき装置とし、かつ、第1循環装置によるめっき槽の単位面積・単位時間当たりの循環流量を1〜30cm3/cm2・minの範囲内となるようにしたので、第1循環装置はめっき槽内の無電解めっき液を静止状態に近い状態で循環させることができ、被めっき物への安定した金属析出が維持され良好な無電解めっきが可能であり、また、第2循環装置はめっき槽内の無電解めっき液の循環に影響を与えることなくリザーブ槽内の無電解めっき液を循環させることができるので、局部加熱が防止され無電解めっき液の安定性が向上するという効果が奏される。
【図面の簡単な説明】
【図1】本発明の無電解めっき装置の一実施形態を示す概略構成図である。
【図2】本発明の無電解めっき装置の他の実施形態を示す概略構成図である。
【符号の説明】
1,11…無電解めっき装置
2…めっき槽
3…リザーブ槽
4…ヒーター
6…第1循環装置
6a…配管
6b…ポンプ
6c…バルブ
7…第1循環装置
7a…配管
7b…ポンプ
7c…流量計
7d…制御装置
8a…配管
8b…ポンプ
8c…ろ過器
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electroless plating apparatus, and more particularly to an electroless plating apparatus that enables plating on an object to be plated having a small area.
[0002]
[Prior art]
In general electroless plating, the plating area of the object to be plated is on the order of cm 2 to m 2 , and those having a minute area of 1 cm 2 or less are fine particles floating in the electroless plating solution. When the electroless plating reaction proceeds on these fine particles, the particles become enormous and settle in the plating tank while consuming the electroless plating solution, and then become the core for depositing metal in the plating tank. This is the main factor that significantly reduces the stability of the liquid.
For this reason, the conventional electroless plating solution has a composition that prevents metal deposition on fine particles by adding a stabilizer having an effect of suppressing precipitation of heavy metals, sulfur-containing organic compounds, nitrogen-containing organic compounds and the like. Yes.
[0003]
In addition, the conventional electroless plating equipment is equipped with a filter in the circulation flow path, and the electroless plating solution is circulated and filtered to collect fine particles to prevent particle growth and particle settling in the plating tank. Designed to be. In the above filter, the liquid flow rate is relatively large, and the above-mentioned stabilizer is sufficiently supplied to the collected particles, which are adsorbed on the particle surface, thereby suppressing metal precipitation. The plating tank has also been improved in the shape of the overflow tank, the circulation rate, the structure of the outlet, and the filter (Takao Nakayama, Surface Technology, 303-307, Vol. 42, No. 3, 1991). ).
Another factor causing unnecessary electroless plating reaction to proceed in the plating tank is local heating around the heater for adjusting the plating bath temperature. If the electroless plating solution around the heater is not sufficiently stirred, the temperature around the heater will rise locally, making it easier for the electroless plating reaction to proceed. As a result, plating particles are generated and the stability of the electroless plating solution is significantly reduced. In order to prevent such local heating, stirring of the electroless plating solution and sufficient liquid circulation are required, and the conventional electroless plating apparatus is based on flowing the electroless plating solution in the plating tank. Has been designed.
[0004]
Further, from the viewpoint of improving bath stability, as disclosed in JP-A-3-75378, circulation of a low-temperature plating solution having a high bath component concentration and circulation of a high-temperature plating solution having a low bath component concentration are performed. In combination, an electroless plating apparatus that replenishes the temperature and concentration of the plating solution separately to keep the plating solution in an inactive state or a state close to it and prevent metal from depositing in the piping and pumps of the circulation line. is there.
In this way, in the conventional electroless plating that assumes the order of cm 2 to m 2 as the plating area of the object to be plated, the plating of a small area is required on both sides of the electroless plating solution composition and the mechanism of the electroless plating apparatus. Precipitation was suppressed.
On the other hand, in the semiconductor device manufacturing process, LSI electrodes are formed by vacuum film formation or electroplating, but with the miniaturization of electrodes and the increase in wiring density, attention has been focused on electrode formation by electroless plating. Yes. In this case, the electrode, which is the object to be plated, has been refined to 0.0002 cm 2 at the largest and 0.00005 cm 2 or less at the smallest.
[0005]
[Problems to be solved by the invention]
The size of such a microelectrode is equivalent to the foreign matter (fine particles) in the above-described conventional electroless plating solution. For this reason, when electroless plating is performed on a semiconductor wafer having a microelectrode in a conventional electroless plating apparatus, a stabilizer having an effect of preventing precipitation is excessively supplied to the microelectrode by a liquid flow, and the shape of the plating deteriorates. In the worst case, there is a problem that plating is completely suppressed and precipitation stops. Therefore, the electroless plating on an object to be plated such as a microelectrode is preferably in a state where the flow of the electroless plating solution in the plating tank approaches as much as possible and the electroless plating solution is stationary.
However, when the flow of the electroless plating solution in the plating tank is stopped, the liquid temperature in the vicinity of the heater rises, metal deposition on the heater occurs due to local heating, or plating particles are generated in the electroless plating solution, There is a problem that the stability of the electroless plating solution is significantly reduced. For this reason, attempts have been made to achieve both metal deposition on the object to be plated, such as microelectrodes, and prevention of local heating, due to changes in the liquid circulation conditions and the installation of rectifying plates inside the plating tank. A preferable electroless plating apparatus has not been obtained.
[0006]
Further, the electroless plating apparatus disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 3-75378 has almost no change in bath component concentration in plating with a small area of 1 cm 2 or less. It is difficult to make the inactive state, and it cannot be an effective measure for improving bath stability. Furthermore, in order to prevent metal deposition on the heater due to local heating, it is necessary to circulate the plating solution supplemented with temperature to the plating tank at a predetermined flow rate. Even if this is relaxed, it is difficult to bring the flow of the electroless plating solution close to a stationary state.
The present invention has been made in view of the above circumstances, and provides an electroless plating apparatus that enables plating on an object to be plated such as a microelectrode of 1 cm 2 or less in a semiconductor device manufacturing process. The purpose is to provide.
[0007]
[Means for Solving the Problems]
In order to achieve such an object, an electroless plating apparatus according to the present invention is an electroless plating apparatus that uses a minute area of 1 cm 2 or less as an object to be plated, and includes a plating tank into which the object is to be plated, and a heater. A reserve tank in which the electroless plating solution overflowed from the plating tank to the reserve tank is circulated to the plating tank, and the electroless plating solution in the reserve tank is circulated. , with adjusting the electroless plating solution in the reserve tank to the desired liquid temperature, and a second circulation device order to prevent the plating particles generated at the metal deposition or electroless plating solution to the heater due to local heating wherein the circulation flow rate per unit area and unit time of the first said plating bath by circulating device is in the range of 1~30cm3 / cm2 · min, the the capacity V1 of the plating tank reservoir Volume ratio V1 / V2 of the capacitance of the probe tank V2 is set to such that structure in the range of 0.1 to 1.0.
[0008]
As a preferred aspect of the present invention, the first circulation device includes a pump and a flow meter disposed in the circulation flow path, and circulates by controlling the pump based on a flow velocity value measured by the flow meter. It was set as the structure provided with the control apparatus for adjusting a flow volume.
Moreover, as a preferable aspect of the present invention, the second circulation device is configured to include a pump and a filter.
In the present invention as described above, the first circulation device can circulate the electroless plating solution in the plating tank in a state close to a stationary state, and the second circulation device can remove the electroless plating solution in the plating tank. The electroless plating solution in the reserve tank can be circulated without affecting the circulation.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing an embodiment of an electroless plating apparatus of the present invention. In FIG. 1, an electroless plating apparatus 1 includes a plating tank 2 for introducing an object to be plated, and a reserve tank 3 provided with a heater 4 for adjusting a plating bath temperature. The plating tank 2 is provided with a low wall 2a ′ in a part of the wall 2a, and is configured such that the electroless plating solution overflows from the wall 2a ′. The reserve tank 3 is disposed at a position for receiving the electroless plating solution overflowed from the plating tank 2.
The electroless plating apparatus 1 includes a first circulation device 6 for circulating the electroless plating solution overflowed from the wall portion 2 a ′ of the plating tank 2 to the reserve tank 3 to the plating tank 2. The first circulation device 6 includes a pipe (circulation flow path) 6a connected from the vicinity of the bottom of the reserve tank 3 to the bottom of the plating tank 2, and a pump 6b and a valve 6c disposed in the middle of the pipe 6a. ing.
[0010]
In addition, the electroless plating apparatus 1 includes a second circulation device for circulating the electroless plating solution in the reserve tank 3. The second circulation device 8 includes a pipe (circulation flow path) 8a connected from the bottom of the reserve tank 3 to a substantially central part of the reserve tank 3, a pump 8b and a filter 8c disposed in the middle of the pipe 8a. It has.
The heater 4 disposed in the reserve tank 3 is for adjusting the temperature of the electroless plating solution in the reserve tank 3. Such a heater 4 is not particularly limited. For example, steam, hot water or the like is flowed into the pipe to heat the electroless plating solution that is in contact with the pipe, or cold water or the like is flowed into the pipe to be in contact with the pipe. The electroless plating solution may be cooled. Moreover, the heater 4 can also be set as the structure which heats the outer wall of the reserve tank 3 directly or indirectly via a heat medium.
[0011]
The first circulation device 6 controls the flow rate with a valve 6c, for example, so that the electroless plating solution is supplied from the reserve tank 3 to the plating tank 2 at a predetermined circulation flow rate independently of the second circulation device 8. Can be circulated. As will be described later, the electroless plating solution in the reserve tank 3 is adjusted to a predetermined liquid temperature by the heater 4 and the second circulation device 8, and therefore, by the circulation of the electroless plating solution by the first circulation device 6, The plating bath temperature in the plating tank 2 is also adjusted to a predetermined temperature. In the present invention, the circulation flow rate per unit area / unit time of the plating tank 2 by the first circulation device 6 is set to a range of 1 to 30 cm 3 / cm 2 · min, preferably 4 to 12 cm 3 / cm 2 · min. . Thereby, the electroless plating solution in the plating tank 2 can be circulated in a state close to a stationary state. For this reason, it is possible to prevent the stabilizer having the effect of suppressing precipitation of heavy metals, sulfur-containing organic compounds, nitrogen-containing organic compounds, etc. contained in the electroless plating solution from being excessively supplied to the object to be plated with a small area. Stable metal deposition on the plated object is maintained and good electroless plating is possible. If the circulating flow rate per unit area / unit time of the plating tank 2 by the first circulation device 6 is less than 1 cm 3 / cm 2 · min, it is difficult to adjust the temperature of the plating bath in the plating tank 2, and 30 cm 3 / cm 2 · If it exceeds min, stable metal deposition on the object to be plated is hindered, which is not preferable.
The “unit area of the plating tank” at the above circulation flow rate means to divide by the horizontal sectional area (cm 2 ) of the inner surface of the plating tank, and this horizontal sectional area is the depth of the plating tank. If it is not uniform in the vertical direction, the average value is taken as the horizontal sectional area.
[0012]
The second circulation device 8 can circulate the electroless plating solution from the bottom of the reserve tank 3 to the substantially central portion of the reserve tank 3 via the filter 8c by the pump 8b. The electroless plating solution in the reserve tank 3 is circulated by the second circulation device 8 so that the electroless plating solution in the reserve tank 3 is adjusted to a predetermined solution temperature, and metal deposition on the heater 4 by local heating or Further, the generation of plating particles in the electroless plating solution is prevented, and the stability of the electroless plating solution is improved.
In addition, the capacity | capacitance of the plating tank 2 in the electroless-plating apparatus 1 and the capacity | capacitance of the reserve tank 3 can be set suitably, for example, the capacity | capacitance V1 of the plating tank 2 is the range of 10-100L, and the capacity | capacitance V2 of the reserve tank 3 is 20 The capacity ratio V1 / V2 of both tanks can be set in the range of 0.1 to 1.0.
The material of the plating tank 2, the reserve tank 3, the pipe 6 a of the first circulation device 6, and the pipe 8 a of the second circulation device 8 is, for example, SUS, Teflon (registered trademark), PP (polypropylene), PPS (polyphenylene sulfide), and the like can be used. Moreover, said filter 8c can use what is used in the conventional electroless-plating apparatus, for example, a membrane filter etc. can be mentioned.
[0013]
FIG. 2 is a schematic configuration diagram showing another embodiment of the electroless plating apparatus of the present invention. In FIG. 2, the electroless plating apparatus 11 is the same as the above-described electroless plating apparatus 1 except for the first circulation device 7. Common members are assigned the same member numbers, and descriptions thereof are omitted.
The first circulation device 7 of the electroless plating apparatus 11 includes a pipe (circulation flow path) 7a connected from the vicinity of the bottom of the reserve tank 3 to the bottom of the plating tank 2, and a pump disposed in the middle of the pipe 7a. 7b, a flow meter 7c, and a control device 7d. In the first circulation device 7, the flow velocity value of the pipe 7a measured by the flow meter 7c is sent to the control device 7, and the control device 7d controls the pump 7b based on this flow velocity value to adjust the circulation flow rate. Also in this case, the circulation flow rate per unit area / unit time of the plating tank 2 by the first circulation device 7 is set in the range of 1 to 30 cm 3 / cm 2 · min, preferably 4 to 12 cm 3 / cm 2 · min. For example, a personal computer or a programmable controller can be used as the control device 7d. The material of the pipe 7a of the first circulation device 7 can be the same as that of the pipe 6a described above.
The electroless plating apparatuses 1 and 11 described above are examples, and the present invention is not limited to these embodiments.
[0014]
【Example】
Next, the present invention will be described in more detail with specific examples.
[Example]
The plating bath volume (tank capacity when overflowing) is a polypropylene plating tank with a capacity of 20L and the polypropylene reserve tank with a capacity of 40L. Arranged. The reserve tank was equipped with a Teflon heater (a heater with a pipe coated with Teflon (registered trademark)) as a heater.
[0015]
A polypropylene pipe was provided so as to connect the vicinity of the bottom of the reserve tank and the bottom of the plating tank, and a pump and a flow meter (KARUMAN ACE, Inc. manufactured by Kakinomiya Seisakusho Co., Ltd.) were disposed in the middle of the pipe. Further, a control device was arranged so that the circulation flow rate could be adjusted by controlling the pump based on the flow velocity value of the pipe measured by this flow meter. Thus, the first circulation device was obtained.
In addition, a polypropylene pipe was provided so as to connect the bottom of the reserve tank and the center of the reserve tank, and a pump and a filter (membrane filter) were provided in the middle of the pipe to form a second circulation device.
Thereby, the electroless plating apparatus of the present invention as shown in FIG. 2 was obtained.
[0016]
Next, an electroless plating solution (Melplate NI-869 manufactured by Meltex Co., Ltd.) was poured into the plating tank and the reserve tank of the above electroless plating apparatus.
Subsequently, the circulation flow rate of the electroless plating solution in the reserve tank by the second circulation device was set to 400 L / hour, and it was heated by a heater to set the liquid temperature of the electroless plating solution in the reserve tank to 85 ° C. Further, the circulation flow rate per unit area / unit time of the plating tank by the first circulation device was set to 6 cm 3 / cm 2 · min. Thereby, the plating bath temperature in a plating tank became 84-85 degreeC.
[0017]
Next, an object to be plated provided with a plurality of areas to be plated having a minute area (0.0001 cm 2 ) was prepared. This object to be plated was immersed in a plating tank for 20 minutes, and electroless plating was applied to a part to be plated having a small area. After the electroless plating was completed, the object to be plated was lifted from the plating tank, and the formed plating pattern was observed. As a result, it was confirmed that an electrode having a uniform and good shape having a thickness of about 5 μm was formed on the above-mentioned minute area. In the reserve tank, local heating in the vicinity of the heater was prevented, and the electroless plating solution was highly stable.
[0018]
[Comparative Example 1]
The electroless plating was applied to the object to be plated in the same manner as in Example 1 except that the circulation flow rate per unit area / unit time of the plating tank by the first circulation device was set to 40 cm 3 / cm 2 · min. .
As a result of observing the formed plating pattern, some defects were observed.
[0019]
[Comparative Example 2]
The plating bath amount (the tank capacity at the time of overflow) is 130L, and a SUS plating tank provided with a SUS heater (pipe made of SUS) as a heater, and the bottom of this plating tank and the central part of the plating tank A pipe made of SUS was provided so as to be connected, and a pump and a filter (membrane filter) were arranged in the middle of the pipe to form a circulation device. Thereby, an electroless plating apparatus having only one circulation system was obtained.
The same electroless plating solution as in the example was poured into the plating tank of this electroless plating apparatus and heated by a heater so that the plating bath temperature in the plating tank was 85 ° C. However, in order to prevent local heating in the vicinity of the heater, the electroless plating solution circulation flow rate per unit area / unit time of the plating tank was set to 60 cm 3 / cm 2 · min.
Thereafter, in the same manner as in Example 1, electroless plating was performed on the object to be plated.
As a result of observing the formed plating pattern, a deposition failure was observed in a portion to be plated with a small area (0.0001 cm 2 ), and the formed electrode had an abnormal shape, and some of the electrodes were not plated. There was an electrode that was a deposit.
[0020]
【The invention's effect】
As described above in detail, according to the present invention, a plating tank into which an object is to be plated, a reserve tank provided with a heater for adjusting the plating bath temperature, and an electroless overflow from the plating tank to the reserve tank An electroless plating apparatus including a first circulation device for circulating the plating solution to the plating tank and a second circulation device for circulating the electroless plating solution in the reserve tank, and the first circulation device. Since the circulation flow rate per unit area / unit time of the plating tank is set within the range of 1 to 30 cm 3 / cm 2 · min, the first circulation device closes the electroless plating solution in the plating tank to a stationary state. It can be circulated in a state, stable metal deposition on the object to be plated is maintained and good electroless plating is possible, and the second circulation device affects the circulation of the electroless plating solution in the plating tank. Give It is possible to circulate the electroless plating liquid in the reserve tank without the stability of the electroless plating liquid local heating is prevented is exhibited an effect of improving.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing an embodiment of an electroless plating apparatus of the present invention.
FIG. 2 is a schematic configuration diagram showing another embodiment of the electroless plating apparatus of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1,11 ... Electroless-plating apparatus 2 ... Plating tank 3 ... Reserve tank 4 ... Heater 6 ... 1st circulation device 6a ... Pipe 6b ... Pump 6c ... Valve 7 ... 1st circulation device 7a ... Pipe 7b ... Pump 7c ... Flow meter 7d ... Control device 8a ... Piping 8b ... Pump 8c ... Filter

Claims (3)

1cm 2 以下の微小面積を被めっき物とする無電解めっき装置において、
被めっき物を投入するめっき槽と、ヒーターが配設されたリザーブ槽と、前記めっき槽から前記リザーブ槽にオーバーフローした無電解めっき液を前記めっき槽に循環させるための第1循環装置と、前記リザーブ槽内の無電解めっき液を循環させ、リザーブ槽内の無電解めっき液を所望の液温に調整するとともに、局所加熱による前記ヒーターへの金属析出や無電解めっき液中でのめっき粒子発生を防止するための第2循環装置とを備え、前記第1循環装置による前記めっき槽の単位面積・単位時間当たりの循環流量は1〜30cm3/cm2・minの範囲であり、前記めっき槽の容量V1と前記リザーブ槽の容量V2との容量比V1/V2が0.1〜1.0の範囲であることを特徴とする無電解めっき装置。
In an electroless plating apparatus that uses a small area of 1 cm 2 or less to be plated,
A plating tank for charging an object to be plated, a reserve tank in which a heater is disposed, a first circulation device for circulating an electroless plating solution overflowing from the plating tank to the reserve tank, to the plating tank; Circulate the electroless plating solution in the reserve tank, adjust the electroless plating solution in the reserve tank to the desired solution temperature, deposit metal on the heater by local heating, and generate plating particles in the electroless plating solution and a second circulation device order to prevent circulation flow rate per unit area and unit time of the plating tank according to the first circulation unit is in the range of 1~30cm3 / cm2 · min, the plating tank An electroless plating apparatus , wherein a capacity ratio V1 / V2 between the capacity V1 and the capacity V2 of the reserve tank is in a range of 0.1 to 1.0 .
前記第1循環装置は循環流路中に配設されたポンプと流量計を備えるとともに、該流量計により計測した流速値に基づいて前記ポンプを制御して循環流量を調整するための制御装置を備えることを特徴とする請求項1に記載の無電解めっき装置。  The first circulation device includes a pump and a flow meter disposed in the circulation flow path, and a control device for controlling the pump based on a flow velocity value measured by the flow meter to adjust the circulation flow rate. The electroless plating apparatus according to claim 1, wherein the electroless plating apparatus is provided. 前記第2循環装置はポンプとろ過器を備えることを特徴とする請求項1または請求項2に記載の無電解めっき装置。  The electroless plating apparatus according to claim 1, wherein the second circulation device includes a pump and a filter.
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