JP3972872B2 - Tape carrier for semiconductor device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a tape carrier for a semiconductor device and a method for manufacturing the same, and more particularly to a tape carrier for a semiconductor device in which a wiring pattern is formed using a transfer mold instead of a photolithography process and a method for manufacturing the same.
[0002]
[Prior art]
Conventional printed circuit boards generally have a wiring pattern formed by a photolithography process. That is, a resist pattern is formed on the conductor layer on the surface of the substrate by an exposure phenomenon, and a wiring pattern is formed on the conductor layer by wet etching using this as a mask.
[0003]
However, in the tape carrier for semiconductor devices, the wiring width and interval are becoming narrower due to the higher mounting density, and it has become difficult to stably form the wiring by the conventional method using the photolithography process.
[0004]
As a method for compensating for this, a method of forming a wiring pattern by transferring a mold has been proposed (for example, see Patent Document 1). In this method, only the wiring region on the surface of the base material is chemically modified by a mold, and wiring is formed in the modified region. Specifically, as shown in FIG. 3, a substance that modifies the surface layer of the substrate 2 is applied to the protrusions 5 of the mold (stamper) 1 on which the wiring pattern made of the protrusions 5 is formed (a). The protruding portion 5 of the stamper 1 is brought into contact with the surface of the base material 2 to attach the modified substance (b), thereby forming a chemically modified pattern of the modified layer 3 on the surface of the base material 2 (c). ). Here, as the modifying substance, for example, an electroless plating catalyst is used. Thereafter, a conductive material 4 such as a copper plating is stacked on the modified layer 3 to form a wiring pattern, thereby completing a pattern forming body (d).
[0005]
Similarly, as a method of transferring a mold, a method of forming a wiring pattern by pushing the mold is also proposed (see, for example, Patent Document 2). Specifically, as shown in FIG. 4, a stamper 1 having protrusions 5 formed according to a wiring pattern is prepared (a), and a laminate in which a sheet-like body 6 is arranged on the surface of a substrate 2. The stamper 1 is pushed into the body with the release sheet 7 interposed therebetween (b), thereby forming a wiring pattern groove 8 as a transfer groove and integrating the laminate (c). In this method, the conductor 9 is embedded to form a wiring (d).
[0006]
[Patent Document 1]
Japanese Patent Laying-Open No. 2002-184752 (FIG. 1)
[0007]
[Patent Document 2]
JP 2001-230526 A (FIGS. 1 and 2)
[0008]
[Problems to be solved by the invention]
However, in the one described in Patent Document 1, since the wiring pattern is formed by bringing the mold into contact with the surface to modify the surface, the wiring pattern having a large cross-sectional area is formed at a time although the adhesive strength with the base material is high. Can not do it. Therefore, it was necessary to deposit the functional material separately on the modified layer. As a result, the process is complicated.
[0009]
In addition, since the wiring pattern groove is directly transferred in the one described in Patent Document 2, a wiring pattern having a large cross-sectional area can be formed. However, since the laminated body is integrated at the same time as the wiring pattern groove is formed. The sheet-like body has to be heated and the process becomes complicated. The wiring is formed by embedding a conductive resin or copper plating in a wiring pattern groove formed on the base material. However, since the laminate has a smooth surface, the conductive material or Adhesive strength with copper plating was weak, and there was a possibility that the wiring might fall off the laminate. Furthermore, in order to improve mold release from the laminate, it is necessary to interpose a release sheet separate from the laminate.
[0010]
An object of the present invention is to form a wiring pattern having a large cross-sectional area at a time in a simple process by solving the above-mentioned problems of the prior art in a method of forming a wiring pattern by pushing a stamper into a substrate. An object of the present invention is to provide a tape carrier for semiconductor devices. Moreover, the subject of this invention is providing the tape carrier for semiconductor devices with favorable adhesiveness of a conductor and a base material. Moreover, the subject of this invention is providing the tape carrier for semiconductor devices with which mold release with respect to a base material is easy, without interposing a release sheet. Moreover, the subject of this invention is providing the manufacturing method of the tape carrier for semiconductor devices which can obtain a highly reliable wiring pattern.
[0011]
[Means for Solving the Problems]
According to a first aspect of the present invention, a wiring pattern groove is formed on the base material by pressing a mold in which a wiring pattern composed of the protrusions with the convex surfaces of the protrusions roughened is pressed on the integrated base material. A tape carrier for a semiconductor device obtained by transferring and forming a wiring by providing a conductor in the wiring pattern groove, and when the wiring pattern groove is transferred onto the substrate, the wiring pattern groove A tape carrier for a semiconductor device, characterized in that a groove bottom is roughened . The base material integrated here means one that has already been integrated before pressing with a mold, and is composed of a single layer body or a multilayer body. They are not integrated, but are already integrated when pressed. Further, by filling a conductive material or by plating, a conductor can be provided in the wiring pattern groove to form a wiring.
[0012]
Since the pattern groove for wiring is directly transferred onto the substrate by pressing the mold, a wiring pattern having a large cross-sectional area can be formed at a time as compared with the case where the surface is modified by contacting the mold. Further, since only the process of transferring the wiring pattern groove onto the already integrated base material is performed, the process is simpler than that in which the laminated body is integrated at the same time.
[0014]
Further, when the convex surface of the convex wiring pattern formed on the mold is roughened, the adhesion between the substrate and the conductor provided in the wiring pattern groove is improved.
[0015]
A second invention is the tape carrier for a semiconductor device according to the first invention, wherein a surface that contacts the base material of the mold is covered with a lubricating film.
[0016]
When the surface of the mold that comes into contact with the base material is covered with a lubricating film, it is easy to separate the mold from the base material.
[0017]
According to a third aspect of the present invention, there is provided a wiring pattern in which a groove bottom portion is roughened on the base material by pressing a mold in which a wiring pattern made of a protrusion having a roughened convex surface is formed on an integrated base material. A method of manufacturing a tape carrier for a semiconductor device, comprising: a step of transferring a groove; and a step of forming a wiring by filling the wiring pattern groove with a conductive material. Is the method.
[0018]
Since the adhesion between the conductive material and the wiring pattern groove transferred to the base material is improved, a highly reliable tape carrier for a semiconductor device can be manufactured.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below. In the embodiment, a method is employed in which a wiring pattern is formed by pressing a mold (stamper) into a base material.
[0020]
FIG. 2 is a process diagram showing an example of the stamper manufacturing method. As the base material 19 for the stamper, a material having a roughened surface 22 on the surface is used (a). At this time, the method of forming the roughened surface 22 may be chemical treatment or mechanical treatment, and is preferably one that can be uniformly treated. Next, a resist film 23 is formed in a portion corresponding to the wiring pattern on the surface of the stamper base material 19 by a process such as photolithography (b). Groove processing is performed by a dry etching method such as plasma to produce a stamper 20 having a wiring pattern composed of protrusions 21 (c). Finally, the resist film 23 is removed, and the stamper 20 having the roughened surface 22 is completed by roughening the convex surface of the protruding portion 21 of the wiring pattern comprising the protruding portion 21 (d).
[0021]
Here, Si can be used as the stamper material, SiO ₂ can be used as the resist film, and SF ₆ can be used as the etching gas, but other combinations may be used. The surface roughness (roughening) of the roughened surface 22 of the protrusion 21 formed on the stamper 20 is preferably Ra = 0.2 to 5.0 μm. In the state where the roughening is insufficient, the adhesion between the base material and the conductor cannot be sufficiently obtained, and the conductor described later may be peeled off from the base material. Further, the roughened surface 22 where the roughening becomes excessive hinders the flatness of the wiring surface. Therefore, the roughening range is an appropriate range.
[0022]
FIG. 1 is a process diagram showing a method of manufacturing a mounting substrate such as a tape carrier for a semiconductor device using the stamper 20 (a) manufactured as described above. A wiring pattern composed of the protrusions 21 provided on the stamper 20 is pressed against a wiring pattern formation scheduled area on the substrate 11 (b). Here, the base material 11 is a single layer body. For example, a highly heat-resistant and thermosetting resin, more specifically a polyimide resin can be considered, but if a B-stage semi-cured material is used, the applied pressure can be reduced and molding is facilitated. . In addition, although the base material 11 may be a laminated body, in that case, what was integrated is used.
[0023]
By pressing the stamper 20, the wiring pattern groove 12 is formed on the substrate 11 (c). After the stamper 20 is pressed, the roughened surface 13 is transferred to the groove bottom as the groove bottom of the wiring pattern groove 12. After separating the stamper 20 from the base material 11, a wiring is formed by filling the wiring pattern groove 12 with a conductive material 15 such as a conductive paste as a conductor, thereby completing a mounting substrate (d). .
[0024]
According to the above-described embodiment, it is not necessary to press the stamper against the already integrated base material, and it is not necessary to integrate the base material by this pressing, so there is no need to heat the base material or the like. Therefore, the process can be simplified as compared with the case where the wiring pattern groove is simultaneously transferred when the laminated body is integrated. Also, since the wiring pattern groove is directly transferred onto the substrate by pressing using a stamper, a wiring pattern having a large cross-sectional area is once applied to the substrate as compared with the case where the stamper is brought into contact with the substrate to modify the surface. Can be formed. Also, the convex surface of the protrusion formed on the stamper is roughened, and the groove bottom surface of the wiring pattern groove formed by the protrusion is roughened, so that the wiring material transferred to the conductive material and the base material is used. Adhesiveness with the pattern groove is improved, and there is no possibility that the conductive substance is detached from the base material. Adhesiveness between the conductive material and the wiring pattern groove transferred to the base material is improved, and a highly reliable tape carrier for a semiconductor device can be manufactured.
[0025]
In the embodiment described above, the base material 11 and the stamper 20 may be in close contact with each other when forming the wiring pattern groove. In particular, when the product is continuously manufactured, the mold separation from the base material becomes worse, and a good product shape is obtained. May not be obtained. Therefore, it is necessary that the stamper 20 can be easily peeled off after the formation of the wiring pattern groove. Therefore, it is preferable to form a film having high lubricity on at least the surface of the stamper 20 that contacts the base material 11. Thus, in order to improve mold release with respect to the base material 11, the stamper 20 is surface-processed as a release material to form a film, so that it is not necessary to interpose a release sheet as a third member at the time of pressing, Further, it is not necessary to peel off the release sheet after pressing. Therefore, better processing is possible and a good product shape can be obtained. For example, Teflon (registered trademark), DLC (Diamond Like Carbon), TiN, Si ₃ N ₄ , TiC and the like are good as the film having high lubricity. It is good to provide.
[0026]
【The invention's effect】
According to the tape carrier for a semiconductor device of the present invention, a wiring pattern having a large cross-sectional area can be formed at a time by a simple process. Further, the adhesion between the conductor and the substrate can be improved, and the reliability can be improved. Moreover, mold release with respect to a base material can be performed easily without interposing a release sheet. Moreover, according to the manufacturing method of the tape carrier for semiconductor devices, a highly reliable wiring pattern can be obtained.
[Brief description of the drawings]
FIG. 1 is a process diagram showing a method for manufacturing a semiconductor device tape carrier according to a first embodiment;
FIG. 2 is a process diagram showing a method for manufacturing a semiconductor device tape carrier according to a second embodiment;
FIG. 3 is a process diagram showing a method of manufacturing a pattern forming body according to a conventional example.
FIG. 4 is a process diagram showing a method of manufacturing a mounting board according to another conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 11 Base material 12 Wiring pattern groove | channel 13 Roughening surface 15 of a groove bottom part Conductor 20 Stamper (type)
21 Protrusion 22 Roughened surface of protrusion

Claims (3)

A wiring pattern groove is transferred onto the substrate by pressing a mold in which a wiring pattern composed of the protrusions with the convex surfaces of the protrusions roughened is pressed on the integrated substrate, and the wiring A tape carrier for a semiconductor device obtained by forming a wiring by providing a conductor in a pattern groove, and the groove bottom of the wiring pattern groove is roughened when the wiring pattern groove is transferred onto the substrate. A tape carrier for a semiconductor device, wherein the tape carrier is for a semiconductor device . The tape carrier for a semiconductor device according to claim 1, wherein a surface that contacts the base material of the mold is covered with a lubricating film. A step of pressing a mold on which a wiring pattern made of a projection having a roughened convex surface is formed on an integrated base material to transfer a wiring pattern groove having a roughened groove bottom on the base material; ,
Forming a wiring by filling the wiring pattern groove with a conductive material; and
A method for producing a tape carrier for a semiconductor device, comprising:

Images