JP3974915B2 - Substrate heating device - Google Patents

Description

  The present invention relates to a substrate heating apparatus, and more particularly to a substrate heating apparatus such as a semiconductor substrate.

  Conventional substrate heating apparatuses include a horizontal substrate heating apparatus in which a semiconductor substrate is set vertically in a chamber and a vertical substrate heating apparatus in which a semiconductor substrate is set horizontally.

FIG. 4 shows the conventional vertical substrate heating apparatus, wherein 1 is an airtight chamber, 2 is a substrate such as a semiconductor substrate, 3 is a substrate mounting portion provided in the airtight chamber 1 for mounting the substrate 2, 4 is a process window for laser light incidence provided on the ceiling of the airtight chamber 1, 5 is a mass flow for introducing a stable gas into the airtight chamber 1, and 6 is for exhausting air in the airtight chamber 1. An exhaust pump 7 is a pressure control valve for controlling the degree of vacuum in the airtight chamber 1.

In the conventional substrate heating apparatus, a laser beam is guided to the vicinity of the process window 4 by an optical fiber (not shown) in order to form an insulating film on the substrate, and from the tip of the optical fiber through the process window 4. The substrate 2 placed on the substrate placing part 3 in the hermetic chamber 1 is irradiated with laser light. Such conventional substrate heating apparatuses include those described in Patent Document 1 and Patent Document 2.
Japanese Patent Laid-Open No. 2002-252181 (FIG. 1) JP 2000-87223 A (FIG. 1)

  However, in the conventional substrate heating apparatus, the temperature of the semiconductor substrate is measured by a temperature measuring device (not shown) provided on the substrate mounting portion 3 in the hermetic chamber 1. However, there is a drawback that the maintenance of the temperature measuring instrument is troublesome.

Further, in the above conventional horizontal substrate heating apparatus, the workability is good because it is possible to reduce the height of the heating device, since the semiconductor substrate is set vertically, depending on how the introduction of the process gas on the substrate In order to obtain a non-uniform insulating film with few defects and to obtain an insulating film with few defects, it was necessary to devise a method for introducing the process gas.

  In addition, since the heat flow is different between the upper part and the lower part of the substrate, it is difficult to maintain the entire substrate at a uniform temperature.

Further, in the above conventional vertical substrate heating apparatus, the control of the process gas and the substrate temperature easily, but since the foreign matter from the chamber walls and process gas (particles) to fall on the substrate surface, attaching, frequently a chamber There was a drawback that it was necessary to clean.

FIG. 5 shows a substrate heating apparatus in which such drawbacks are eliminated. An airtight chamber 8, a quartz glass window 9 that is provided on one side of the airtight chamber 8 and transmits laser light, and the airtight chamber 8 are provided. An infrared transmission window 10 that transmits infrared rays, and a substrate holder 12 that is provided between the quartz glass window 9 and the infrared transmission window 10 in the hermetic chamber 8 and on which the semiconductor substrate 11 is placed, A laser irradiator 13 such as a direct semiconductor laser for irradiating a laser beam on the semiconductor substrate 11 placed on the substrate holder 12 through the quartz glass window 9, and the laser irradiation provided in the laser irradiator 13. An optical lens unit 14 for enlarging and irradiating the laser beam of the machine 13 onto the semiconductor substrate 11, the airtight chamber 8 and the laser irradiator 13. A fixed base 15 with a constant, the infrared radiation thermometer 16 for measuring the temperature of infrared rays passing from the substrate 11 through the infrared transmission window 10, the more the tripod 17 for fixing the infrared radiation thermometer 16.

  A plurality of pipes (not shown) are provided in the airtight chamber 8 through the openings 18, and the inside of the airtight chamber 8 is exhausted through the pipes or a process gas is introduced.

The infrared transmitting window 10 is preferably made of barium fluoride, sapphire, CaF ₂ , germanium, zinc selenide or the like.

The semiconductor substrate is Si, GaN, GaAs, ZnO, Al ₂ O ₃ , SiC, or the like.

  Further, since the laser beam is directly irradiated onto the substrate, the diameter of the quartz glass window 9 is preferably at least equal to or larger than the diameter of the semiconductor substrate.

In the substrate heating apparatus , the laser light emitted from the laser source of the laser irradiator 13 is magnified by the optical lens unit 14 and irradiated to the semiconductor substrate 11 in the hermetic chamber 8 through the quartz glass window 9. Then, the infrared rays generated by the heated substrate 11 are captured by the infrared radiation thermometer 16 through the infrared transmission window 10, and the temperature is measured.

According to the substrate heating apparatus of this, the temperature measuring device of the substrate is outside the airtight chamber, but maintenance of the temperature measuring apparatus is facilitated, due to dropping of the foreign substance from the chamber 8 has a structure which can not be tilted in a vertical Frequent cleaning is necessary, and there is a drawback that workability and safety are low.

  The present invention eliminates the above-mentioned drawbacks.

The substrate heating apparatus according to the present invention includes an airtight chamber, a laser light transmitting window provided on one side of the airtight chamber and transmitting a laser beam, and an infrared transmitting window provided on the other side of the airtight chamber that transmits infrared light. And a substrate mounting portion provided in the airtight chamber between the laser light transmitting window and the infrared transmitting window, and a substrate placed on the substrate mounting portion via the laser light transmitting window. A substrate heating apparatus comprising: laser irradiation means for irradiating a laser beam; and an infrared radiation thermometer for measuring temperature from infrared rays from the substrate through the infrared transmission window. irradiating means and the infrared radiation thermometer and the fixed frame and a fixed base for rotatably pivoted the frame body about a horizontal axis, an arbitrary tilted position the frame body relative to the fixed base above And characterized by having a kinematic allowed to tilting means.

  According to the substrate heating apparatus of the present invention, it is possible to cope with either a vertical type or a horizontal type heating method with one unit, high workability and safety, and uniform heating by irradiating the surface of the semiconductor substrate with laser. There is a great advantage that a uniform insulating film with few defects can be formed on the substrate.

  Embodiments of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, the substrate heating apparatus of the present invention is provided on an airtight chamber 8, a quartz glass window 9 provided on one side of the airtight chamber 8 that transmits laser light, and on the other side of the airtight chamber 8. Further, an infrared transmission window 10 that transmits infrared rays, a substrate holder 12 that is provided between the quartz glass window 9 and the infrared transmission window 10 in the hermetic chamber 8, and on which the semiconductor substrate 11 is installed, and the substrate holder A laser irradiator 13 such as a direct semiconductor laser that irradiates laser light on the semiconductor substrate 11 placed on the semiconductor substrate 11 through the quartz glass window 9, and a laser of the laser irradiator 13 provided in the laser irradiator 13. An optical lens unit 14 for enlarging and irradiating the light on the semiconductor substrate 11 and an infrared ray transmitted from the substrate 11 through the infrared transmission window 10 In a more becomes a substrate heating apparatus and the infrared radiation thermometer 16 for measuring the temperature, and the gas-tight chamber 8 and the laser irradiation device 13 and the infrared radiation thermometer 16 is fixed to the frame 19, fixing table the frame 19 15 Thus, a positioning motor 20 is provided on the fixed base 15 so as to pivot about a horizontal axis so as to tilt the frame body 19 to an arbitrary tilting position with respect to the fixed base 15.

  A plurality of pipes (not shown) are provided in the airtight chamber 8 through the openings 18, and the inside of the airtight chamber 8 is exhausted through the pipes or a process gas is introduced.

The infrared transmitting window 10 is preferably made of barium fluoride, sapphire, CaF ₂ , germanium, zinc selenide or the like.

The semiconductor substrate is Si, GaN, GaAs, ZnO, Al ₂ O ₃ , SiC, or the like.

  Further, since the laser beam is directly irradiated onto the substrate, the diameter of the quartz glass window 9 is preferably at least equal to or larger than the diameter of the semiconductor substrate.

  The substrate holder 12 is provided with a fixture 21 for preventing the substrate 11 placed on the substrate holder 12 from falling off.

Since the substrate heating apparatus of the present invention is configured as described above, if the frame body 19 is tilted by a desired angle with respect to the fixed base 15 by the positioning motor 20, the laser irradiator 13, the infrared radiation temperature, and the like. The total 16 and the airtight chamber 8 can be tilted with respect to the fixed base 15 while keeping the arrangement of the airtight chamber 8 constant.

Therefore, for example, when the substrate 11 is attached to the substrate holder 12, a horizontal substrate heating apparatus is used as shown in FIG. 2 , and at the time of laser irradiation, the laser irradiator 13 is attached to the airtight chamber 8 as shown in FIG. 3 . a vertical type substrate heating apparatus located in the lower Te, when retrieving the sample, as shown in FIG. 2 again, it is possible to horizontal.

Further, the laser irradiation device 13, the optical lens unit 14, said airtight chamber 8, when setting the respective devices such as the infrared radiation thermometer 16, the position of each device respectively easy setting, the frame body 19 Since each device can be set after being tilted with respect to the fixed base 15, workability and safety can be improved, and each device can be set accurately.

  Also, once each device is set correctly, the setting of each device remains maintained even if the frame 19 is tilted with respect to the fixed base 15, so that each time when laser irradiation is performed again, Equipment setting is unnecessary, and workability and safety are excellent.

  Further, in the case where there is a risk of particles falling from the chamber wall surface or process gas on the substrate during the heat treatment of the substrate in the hermetic chamber, the laser irradiator 13 is positioned vertically with respect to the hermetic chamber 8. If the substrate is heated by irradiating a laser beam upward with a mold substrate heating apparatus, particles falling during irradiation can be prevented and an insulating film with few defects can be formed.

  According to the substrate heating apparatus of the present invention, a single unit can correspond to a vertical or horizontal heating method, has high workability and safety, and uniformly heats the surface of the semiconductor substrate by laser irradiation. There is a great advantage that a uniform insulating film with few defects can be formed on the substrate.

It is a partially vertical side view of the substrate heating apparatus of the present invention. It is use condition explanatory drawing of the substrate heating apparatus of this invention. It is use condition explanatory drawing of the substrate heating apparatus of this invention. It is explanatory drawing of the usage condition of the conventional board | substrate heating apparatus. It is explanatory drawing of the other conventional substrate heating apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Airtight chamber 2 Substrate 3 Substrate mounting part 4 Process window 5 Mass flow 6 Exhaust pump 7 Valve 8 Airtight chamber 9 Quartz glass window 10 Infrared transmission window 11 Semiconductor substrate 12 Substrate holder 13 Laser irradiation machine 14 Optical lens part 15 Fixing base 16 Infrared ray Radiation thermometer 17 Tripod 18 Opening 19 Frame 20 Motor 21 Fixing tool

Claims (1)

An airtight chamber, a laser light transmitting window provided on one side of the airtight chamber for transmitting laser light, an infrared transmitting window provided on the other side of the airtight chamber for transmitting infrared light, and the laser light transmitting window A substrate mounting portion provided in the hermetic chamber between the infrared transmission window and a laser irradiation means for irradiating a laser beam on the substrate mounted on the substrate mounting portion via the laser light transmission window And an infrared radiation thermometer that measures temperature from infrared rays from the substrate through the infrared transmission window,
A frame in which the hermetic chamber, the laser irradiation means, and the infrared radiation thermometer are fixed; a fixed base that pivotally supports the frame around a horizontal axis ; and the frame that is attached to the fixed base And a tilting means for tilting to an arbitrary tilting position.

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