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JP3978673B2 - Solder plating method and solder plating equipment - Google Patents
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JP3978673B2 - Solder plating method and solder plating equipment - Google Patents

Solder plating method and solder plating equipment Download PDF

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Publication number
JP3978673B2
JP3978673B2 JP2003085013A JP2003085013A JP3978673B2 JP 3978673 B2 JP3978673 B2 JP 3978673B2 JP 2003085013 A JP2003085013 A JP 2003085013A JP 2003085013 A JP2003085013 A JP 2003085013A JP 3978673 B2 JP3978673 B2 JP 3978673B2
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Japan
Prior art keywords
solder
bathtub
intermetallic compound
solder plating
plating
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JP2003085013A
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Japanese (ja)
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JP2004292866A (en
Inventor
隆昭 横山
修 秋元
万蔵 正井
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Priority to JP2003085013A priority Critical patent/JP3978673B2/en
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Description

【0001】
【発明の属する技術分野】
本発明は、半田鍍金技術、特に浴槽内の溶融した半田中に生成される金属間化合物を分離できる半田鍍金法及び半田鍍金装置に関連する。
【0002】
【従来の技術】
半導体装置のリード端子に半田を被覆して、リード端子に半田の鍍金膜を形成する場合に、被鍍金材としてリード端子を溶融状態の半田内に短時間だけ浸漬して取り上げる半田ディップ法が公知である。浴槽内に溶融される半田は、錫96.5重量%と、半田ぬれ性を向上する銀3.5重量%とを含む錫銀(SnAg)共晶半田等が使用される。共晶半田には、銅(Cu)、亜鉛(Zn)を混合し又は銀の代わりに銅を錫に混合した錫銅半田を使用することもある。錫96.5重量%、銀3.5重量%の半田の融点は、221℃であり、浴槽内の半田は、半田の融点より30〜50℃だけ高い温度に加熱される。浴槽内で溶融する半田内にリード端子が浸漬され、リード端子の半田鍍金が行われる。
【0003】
例えば、従来の半田鍍金装置は、図3に示すように、溶融する半田(2)を蓄える金属製の浴槽(1)と、浴槽(1)内の中心部に配置されて浴槽(1)を加熱する加熱装置(3)とを備えている。電気的な加熱抵抗素子のヒータを備えた加熱装置(3)に通電して、浴槽(1)内の半田(2)を溶融状態に加熱した後、電子部品(20)の樹脂封止体(21)から導出された金属製のリード端子(22)を溶融状態の半田(2)内に浸漬して、リード端子(22)に半田の鍍金膜を形成する。半田の鍍金膜をリード端子(22)に形成すると、その後、リード端子(22)を基板に実装する際にリード端子(22)の半田馴染みがよく、リード端子(22)を基板に確実にろう付けすることができる。
【0004】
【発明が解決しようとする課題】
ところで、多数のリード端子(22)を繰り返し浴槽(1)内の半田(2)中に浸漬して半田鍍金を行うと、リード端子(22)中に含まれる錫又は銀が溶融する半田(2)中に溶出し、半田(2)中の金属組成比が変化する。例えば、半田(2)中にリード端子(22)から銀が溶出して銀容量が増加すると、半田(2)の融点が上昇する。例えば、銀容量が3.5重量%から5重量%及び10重量%に上昇すると、半田(2)の溶融温度は、221℃からそれぞれ250℃、295℃に上昇する。半田(2)の融点が上昇すると、溶融する半田(2)内に銀錫金属間化合物が形成され、半田(2)の粘度が上昇して、リード端子(22)半田付け性が低下する弊害が発生する。
そこで、本発明は、浴槽内で溶融状態にある半田の中央部に含まれる金属間化合物の濃度を低減できる半田鍍金法及び半田鍍金装置を提供することを目的とする。
【0005】
【課題を解決するための手段】
本発明による半田鍍金法は、浴槽(1)内に収容される半田(2)を溶融状態に加熱する工程と、浴槽(1)に収容された半田(2)内に被鍍金材(22)を浸漬して、被鍍金材(22)に半田鍍金を行う工程と、被鍍金材(22)を半田(2)内に浸漬した後、半田(2)と共に浴槽(1)を回転する工程と、浴槽(1)の回転により浴槽(1)内に形成された金属間化合物(13)を浴槽(1)内の外周側の底部に移動させる工程と、金属間化合物(13)の量が減少した浴槽(1)内に収容される溶融状態の半田(2)の中央部分に被鍍金材(22)を浸漬する工程とを含む。半田鍍金操作中に溶融状態の半田(2)内に金属間化合物(13)が形成されたとき、回転装置(4)により浴槽(1)内の半田(2)を回転させると、比重の大きな金属間化合物(13)は溶融状態の半田(2)内で遠心力により浴槽(1)内の外周側の底部に移動して沈殿する。従って、金属間化合物(13)の量が減少した浴槽(1)内に収容される溶融状態の半田(2)の中央部分は、所定の溶融温度に保持されるので、半田(2)の中央部分に被鍍金材(22)を浸漬して、良好な半田膜を被鍍金材(22)に形成することができる。
本発明による半田鍍金装置は、被鍍金材(22)を浸漬する半田(2)を収容する浴槽(1)と、浴槽(1)内の半田(2)を溶融状態に加熱する加熱装置(3)と、加熱装置(3)を備える浴槽(1)を回転可能に支持する支持装置(5)と、支持装置(5)上で浴槽(1)を回転させる回転装置(4)とを備え、浴槽(1)の回転により前記浴槽(1)内に形成された金属間化合物を前記浴槽(1)内の外周側の底部に移動させる。
【0006】
【発明の実施の形態】
以下、本発明による半田鍍金法及び半田鍍金装置の実施の形態を図1及び図2について説明する。図1及び図2では、図3に示す箇所と同一の部分に同一の符号を付す。
【0007】
図示のように、本発明による半田鍍金装置は、例えば、リードフリー(鉛無し)の錫銀から成る半田(2)を収容する浴槽(1)と、浴槽(1)内の中央部に配置された加熱装置(3)と、浴槽(1)を回転可能に支持する支持装置(5)と、浴槽(1)を回転させる回転装置(4)と、浴槽(1)の上方に配置されて鍍金により減少する半田(2)を浴槽(1)内に補給する半田供給装置(8)とを備えている。浴槽(1)は、半田より融点が十分に高く金属成分が溶融する半田中に溶出し難いステンレス等の金属により円形に形成される。浴槽(1)内の半田(2)を加熱する加熱装置(3)は、浴槽(1)の中央側に配置されたヒータを備えている。図1に示す実施の形態では、回転装置(4)は、浴槽(1)の底面に接続された回転軸(7)と、歯車装置又はプーリ等の動力伝達装置を介して回転軸(7)に作動連結されて回転軸を回転するモータ等の駆動装置(6)を備えている。支持装置(5)は、浴槽(1)の底部に配置されて浴槽(1)を回転可能に支持するスラスト軸受を有する。回転軸(7)内には加熱装置(3)に電力を供給するハーネス(9)が配置される。ハーネス(9)は、浴槽(1)が回転されても電力を供給できる図示しないコネクタを通じて電源に接続される。半田(2)は、外部リード(22)を構成する少なくとも一部の金属である銀と、錫とを含む半田である。
【0008】
鍍金を行う際に、浴槽(1)内に半田を供給した後、加熱装置(3)を稼動して、所定の温度に浴槽(1)を加熱し、浴槽(1)内の半田を溶融させる。加熱装置(3)は浴槽(1)の中央側に配置されているので、浴槽(1)の中央側に収容された半田(2)の温度が浴槽(1)の外周側に収容された半田(2)の温度よりも高くなる。この状態で、被鍍金材(22)として半導体装置のリード端子(22)を溶融する半田(2)内に浸漬して、リード端子(22)の半田鍍金を行うが、多数のリード端子(22)に鍍金を繰り返して行なうと、半田(2)内にリード端子(22)を構成する銅や銀が溶け出して、半田(2)中の銅や銀の組成比が増加し、半田(2)内に銀錫等の金属間化合物(13)が形成される。この場合、浴槽(1)内の中央部に配置される加熱装置(3)に近い半田(2)の温度は浴槽(1)の外側部に配置される半田(2)の温度よりも高いので、中央部の半田(2)に金属間化合物(13)が形成され易い。
【0009】
そこで、所定の回数半田鍍金を行った後又は半田鍍金を行いながら、回転装置(4)により回転軸(7)を回転し、浴槽(1)を回転させると、半田(2)内で半田よりも比重の大きい金属間化合物(13)は遠心力により浴槽(1)内の外周側の底部に移動して沈殿しやすい。この場合に、浴槽(1)の回転数は、浴槽(1)の大きさにも依存するが、10〜120rpm、好ましくは30〜80rpmがよい。従って、浴槽(1)の中央部にある半田(2)内の金属間化合物(13)の濃度が低下するので、浴槽(1)の中央部での半田(2)の組成変化及びこれに伴う粘度上昇を防止して、良好な半田付け性を保持することができる。
【0010】
本発明の実施の形態では、半田(2)内の金属間化合物(13)を除去する除去手段(10)が設けられる。図1に示す実施の形態では、除去手段(10)は、浴槽(1)の低部、例えば底壁(5)に設けられた排出口(11)と、排出口(11)に接続されたドレイン管(15)と、ドレイン管(15)の一部に取付けられ且つ排出口(11)を開閉可能に制御する開閉弁(12)とを備えている。浴槽(1)を回転して、金属間化合物(13)を浴槽(1)内の外周部の底部に沈殿させた後に、開閉弁(12)を開放すると、排出口(11)、開閉弁(12)及びドレイン管(15)を通り、金属間化合物(13)を多量に含む半田(2)を浴槽(1)の外部に排出することができる。
【0011】
図2は、金属間化合物(13)を捕集する略円筒状のコレクタ(14)を浴槽(1)の外周側に配置した除去手段(10)の他の実施の形態を示す。コレクタ(14)は、浴槽(1)の内壁(1a)の全周に沿って着脱可能に且つ浴槽(1)の側面に密接して配置された円筒部と、円筒部の下端に設けられた内側フランジとから成る略L字状断面を有する。図示を省略するが、コレクタ(14)内には冷却水を循環させる循環路が形成され中央部側の半田(2)の温度より低い温度に浴槽(1)内の外周側の半田(2)を維持して、金属間化合物のコレクタ(14)への付着を促進することができる。浴槽(1)を回転すると、溶融状態の半田(2)内で金属間化合物(13)が浴槽(1)内の外側に移動し、コレクタ(14)の内面に付着するので、金属間化合物(13)を捕集することができる。その後、回転する浴槽(1)を所定の位置で停止させ、浴槽(1)からコレクタ(14)を取り出すと、コレクタ(14)に付着した金属間化合物(13)を半田(2)から除去することができる。また、所定時間使用後に開閉弁(12)を解放して半田(2)をドレイン管(15)から外部に排出した後、浴槽(1)を洗浄することができる。
【0012】
本発明の前記実施の形態は、変更が可能である。半田鍍金を行う製品は、半導体装置以外の金属製品でもよい。
【0013】
【発明の効果】
前記のように、本発明では、浴槽の中央部で半田内に含有する金属間化合物の濃度を低減し、必要に応じて金属間化合物を浴槽内の半田から除去できるので、半田ディップを多数回連続して行なえ、生産性が向上すると共に、均一且つ良好な半田鍍金を行うことができる。また、半田の再生が可能であり、省資源化を図ることができる。
【図面の簡単な説明】
【図1】 本発明による第1の実施の形態を示す半田鍍金装置の断面図
【図2】 本発明による第2の実施の形態を示す半田鍍金装置の断面図
【図3】 従来の半田鍍金装置の断面図
【符号の説明】
(1)・・浴槽、 (2)・・半田、 (3)・・加熱装置、 (4)・・回転装置、 (5)・・支持装置、 (10)・・除去手段、 (11)・・排出口、 (14)・・コレクタ、 (20)・・電子部品、 (22)・・リード端子(被鍍金材)、
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solder plating technique, and more particularly to a solder plating method and a solder plating apparatus capable of separating an intermetallic compound produced in molten solder in a bath.
[0002]
[Prior art]
A solder dipping method is known in which when a lead terminal of a semiconductor device is coated with solder and a solder plating film is formed on the lead terminal, the lead terminal is dipped into the molten solder for a short time as a material to be plated. It is. As the solder to be melted in the bath, tin silver (SnAg) eutectic solder containing 96.5% by weight of tin and 3.5% by weight of silver for improving solder wettability is used. The eutectic solder may be tin copper solder in which copper (Cu) and zinc (Zn) are mixed or copper is mixed with tin instead of silver. The melting point of the solder of 96.5% by weight of tin and 3.5% by weight of silver is 221 ° C., and the solder in the bath is heated to a temperature higher by 30 to 50 ° C. than the melting point of the solder. The lead terminal is immersed in solder that melts in the bath, and solder plating of the lead terminal is performed.
[0003]
For example, as shown in FIG. 3, a conventional solder plating apparatus includes a metal bathtub (1) for storing molten solder (2) and a bathtub (1) disposed in the center of the bathtub (1). And a heating device (3) for heating. After energizing the heating device (3) provided with the heater of the electrical heating resistance element and heating the solder (2) in the bathtub (1) to a molten state, the resin sealing body of the electronic component (20) ( The metal lead terminal (22) derived from 21) is immersed in the molten solder (2) to form a solder plating film on the lead terminal (22). After the solder plating film is formed on the lead terminal (22), the lead terminal (22) is familiar to the solder when the lead terminal (22) is mounted on the board, and the lead terminal (22) is securely attached to the board. Can be attached.
[0004]
[Problems to be solved by the invention]
By the way, when solder plating is performed by repeatedly immersing a large number of lead terminals (22) in the solder (2) in the bathtub (1), the solder (2 that tin or silver contained in the lead terminals (22) melts) ) And the metal composition ratio in the solder (2) changes. For example, when silver elutes from the lead terminal (22) into the solder (2) and the silver capacity increases, the melting point of the solder (2) increases. For example, when the silver capacity increases from 3.5 wt% to 5 wt% and 10 wt%, the melting temperature of the solder (2) increases from 221 ° C. to 250 ° C. and 295 ° C., respectively. When the melting point of the solder (2) increases, a silver tin intermetallic compound is formed in the melting solder (2), the viscosity of the solder (2) increases, and the lead terminal (22) solderability deteriorates. Will occur.
Then, an object of this invention is to provide the solder plating method and solder plating apparatus which can reduce the density | concentration of the intermetallic compound contained in the center part of the solder which is a molten state within a bathtub.
[0005]
[Means for Solving the Problems]
The solder plating method according to the present invention includes a step of heating the solder (2) accommodated in the bathtub (1) to a molten state, and a plated material (22) in the solder (2) accommodated in the bathtub (1). A step of performing solder plating on the plated material (22), and a step of rotating the bathtub (1) together with the solder (2) after immersing the plated material (22) in the solder (2) The step of moving the intermetallic compound (13) formed in the bathtub (1) to the bottom of the outer peripheral side in the bathtub (1) by the rotation of the bathtub (1) and the amount of the intermetallic compound (13) are reduced. Immersing the plated material (22) in the central portion of the molten solder (2) accommodated in the bathtub (1). When the intermetallic compound (13) is formed in the molten solder (2) during the solder plating operation, if the solder (2) in the bathtub (1) is rotated by the rotating device (4), the specific gravity is large. The intermetallic compound (13) moves to the bottom on the outer peripheral side in the bathtub (1) by the centrifugal force in the molten solder (2) and precipitates. Therefore, since the central portion of the molten solder (2) accommodated in the bathtub (1) in which the amount of the intermetallic compound (13) is reduced is maintained at a predetermined melting temperature, the center of the solder (2) A good solder film can be formed on the plated material (22) by immersing the plated material (22) in the portion.
A solder plating apparatus according to the present invention includes a bathtub (1) for containing solder (2) in which a plated material (22) is immersed, and a heating apparatus (3) for heating the solder (2) in the bathtub (1) to a molten state. ), A support device (5) that rotatably supports the bathtub (1) including the heating device (3), and a rotation device (4) that rotates the bathtub (1) on the support device (5), The intermetallic compound formed in the bathtub (1) is moved to the bottom on the outer peripheral side in the bathtub (1) by the rotation of the bathtub (1).
[0006]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of a solder plating method and a solder plating apparatus according to the present invention will be described with reference to FIGS. 1 and 2, the same parts as those shown in FIG.
[0007]
As shown in the figure, the solder plating apparatus according to the present invention is disposed, for example, in a bathtub (1) for containing solder (2) made of lead-free (lead-free) tin-silver, and a central portion in the bathtub (1). A heating device (3), a supporting device (5) for rotatably supporting the bathtub (1), a rotating device (4) for rotating the bathtub (1), and a plating disposed above the bathtub (1). And a solder supply device (8) for replenishing the bathtub (1) with the solder (2) reduced by the above. The bathtub (1) is formed in a circular shape from a metal such as stainless steel, which has a melting point sufficiently higher than that of the solder and hardly dissolves in the solder in which the metal component melts. The heating device (3) for heating the solder (2) in the bathtub (1) includes a heater arranged on the center side of the bathtub (1). In the embodiment shown in FIG. 1, the rotating device (4) includes a rotating shaft (7) connected to the bottom surface of the bathtub (1) and a rotating shaft (7) via a power transmission device such as a gear device or a pulley. And a driving device (6) such as a motor which is operatively connected to the rotating shaft and rotates the rotating shaft. The support device (5) has a thrust bearing that is disposed at the bottom of the bathtub (1) and rotatably supports the bathtub (1). A harness (9) for supplying electric power to the heating device (3) is disposed in the rotating shaft (7). The harness (9) is connected to a power source through a connector (not shown) that can supply power even when the bathtub (1) is rotated. The solder (2) is a solder containing silver, which is at least part of a metal constituting the external lead (22), and tin.
[0008]
When performing plating, after supplying solder into the bathtub (1), the heating device (3) is operated to heat the bathtub (1) to a predetermined temperature and melt the solder in the bathtub (1). . Since the heating device (3) is disposed on the center side of the bathtub (1), the temperature of the solder (2) accommodated on the center side of the bathtub (1) is the solder accommodated on the outer periphery side of the bathtub (1). It becomes higher than the temperature of (2). In this state, the lead terminal (22) of the semiconductor device is immersed in the solder (2) to be melted as the plated material (22), and the lead terminal (22) is solder plated. When the plating is repeated, the copper and silver constituting the lead terminal (22) melt into the solder (2), increasing the composition ratio of copper and silver in the solder (2). ) Forms an intermetallic compound (13) such as silver tin. In this case, the temperature of the solder (2) close to the heating device (3) arranged at the center of the bathtub (1) is higher than the temperature of the solder (2) arranged outside the bathtub (1). In addition, the intermetallic compound (13) is easily formed on the solder (2) at the center.
[0009]
Therefore, after performing solder plating a predetermined number of times or while performing solder plating, the rotating shaft (7) is rotated by the rotating device (4) and the bathtub (1) is rotated. However, the intermetallic compound (13) having a large specific gravity tends to move to the bottom of the outer peripheral side in the bathtub (1) due to centrifugal force and precipitate. In this case, the number of rotations of the bathtub (1) depends on the size of the bathtub (1), but is 10 to 120 rpm, preferably 30 to 80 rpm. Therefore, since the concentration of the intermetallic compound (13) in the solder (2) in the central part of the bathtub (1) is reduced, the composition change of the solder (2) in the central part of the bathtub (1) and accompanying this An increase in viscosity can be prevented and good solderability can be maintained.
[0010]
In the embodiment of the present invention, a removing means (10) for removing the intermetallic compound (13) in the solder (2) is provided. In the embodiment shown in FIG. 1, the removing means (10) is connected to the lower part of the bathtub (1), for example, the outlet (11) provided in the bottom wall (5), and the outlet (11). A drain pipe (15) and an on-off valve (12) attached to a part of the drain pipe (15) and controlling the discharge port (11) to be openable and closable are provided. When the bathtub (1) is rotated and the intermetallic compound (13) is allowed to settle on the bottom of the outer periphery of the bathtub (1), when the on-off valve (12) is opened, the discharge port (11), on-off valve ( The solder (2) containing a large amount of the intermetallic compound (13) can be discharged out of the bathtub (1) through 12) and the drain pipe (15).
[0011]
FIG. 2 shows another embodiment of the removing means (10) in which a substantially cylindrical collector (14) for collecting the intermetallic compound (13) is arranged on the outer peripheral side of the bathtub (1). The collector (14) is provided at the lower end of the cylindrical portion, and a cylindrical portion that is detachable along the entire circumference of the inner wall (1a) of the bathtub (1) and is in close contact with the side surface of the bathtub (1). It has a substantially L-shaped cross section consisting of an inner flange. Although not shown, a circulation path for circulating cooling water is formed in the collector (14), and the solder (2) on the outer peripheral side in the bathtub (1) is lower than the temperature of the solder (2) on the center side. To promote adhesion of the intermetallic compound to the collector (14). When the bathtub (1) is rotated, the intermetallic compound (13) moves to the outside of the bathtub (1) in the molten solder (2) and adheres to the inner surface of the collector (14). 13) can be collected. Thereafter, the rotating bathtub (1) is stopped at a predetermined position, and when the collector (14) is taken out from the bathtub (1), the intermetallic compound (13) adhering to the collector (14) is removed from the solder (2). be able to. In addition, the bathtub (1) can be cleaned after the on-off valve (12) is released and the solder (2) is discharged from the drain pipe (15) to the outside after use for a predetermined time.
[0012]
The embodiment of the present invention can be modified. The product for solder plating may be a metal product other than the semiconductor device.
[0013]
【The invention's effect】
As described above, in the present invention, the concentration of the intermetallic compound contained in the solder is reduced at the center of the bathtub, and the intermetallic compound can be removed from the solder in the bathtub as necessary. It can be performed continuously, and productivity can be improved and uniform and good solder plating can be performed. Further, it is possible to regenerate the solder, and resource saving can be achieved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a solder plating apparatus showing a first embodiment of the present invention. FIG. 2 is a cross-sectional view of a solder plating apparatus showing a second embodiment of the present invention. Sectional view of the device [Explanation of symbols]
(1) ・ ・ Bathtub, (2) ・ ・ Solder, (3) ・ ・ Heating device, (4) ・ ・ Rotating device, (5) ・ Support device, (10) ・ ・ Removing means, (11) ・・ Exhaust port, (14) ・ ・ Collector, (20) ・ ・ Electronic parts, (22) ・ ・ Lead terminal (plated metal),

Claims (5)

浴槽内に収容される半田を溶融状態に加熱する工程と、前記浴槽に収容された前記半田内に被鍍金材を浸漬して、前記被鍍金材に半田鍍金を行う工程とを含む半田鍍金法において、
前記被鍍金材を前記半田内に浸漬した後、前記半田と共に前記浴槽を回転する工程と、
前記浴槽の回転により前記浴槽内に形成された金属間化合物を前記浴槽内の外周側の底部に移動させる工程と、
前記金属間化合物の量が減少した前記浴槽内に収容される溶融状態の前記半田の中央部分に前記被鍍金材を浸漬する工程とを含むことを特徴とする半田鍍金法。
A solder plating method comprising: heating the solder accommodated in the bath to a molten state; and immersing a plating material in the solder accommodated in the bath and performing solder plating on the plating material. In
A step of rotating the bathtub together with the solder after immersing the plated material in the solder;
Moving the intermetallic compound formed in the bathtub by rotation of the bathtub to the bottom on the outer peripheral side in the bathtub;
Immersing the plated material in a central portion of the molten solder accommodated in the bath in which the amount of the intermetallic compound is reduced.
前記金属間化合物の含有量の多い溶融状態にある外周側の前記半田を前記浴槽から除去する除去工程を含み、
該除去工程は、前記浴槽の低部に設けた開閉可能な排出口から前記半田を排出する工程又は前記浴槽を回転する前に前記浴槽の内壁に沿ってコレクタを配置し、前記浴槽の回転により溶融状態の前記半田内で外側に移動する前記金属間化合物を前記コレクタにより捕集し、その後、前記金属間化合物が付着した前記コレクタを前記浴槽の外部に取り出す工程を含む請求項1に記載の半田鍍金法。
A removal step of removing the solder on the outer peripheral side in a molten state with a high content of the intermetallic compound from the bath,
The removing step includes a step of discharging the solder from an openable and closable discharge port provided in a lower portion of the bathtub, or arranging a collector along the inner wall of the bathtub before rotating the bathtub, and by rotating the bathtub. 2. The method according to claim 1, further comprising: collecting the intermetallic compound moving outward in the molten solder by the collector, and then taking out the collector to which the intermetallic compound is attached to the outside of the bath. Solder plating method.
被鍍金材を浸漬する半田を収容する浴槽と、該浴槽内の前記半田を溶融状態に加熱する加熱装置とを備えた半田鍍金装置において、
前記加熱装置を備える前記浴槽を回転可能に支持する支持装置と、
該支持装置上で前記浴槽を回転させる回転装置とを備え、
前記浴槽の回転により前記浴槽内に形成された金属間化合物を前記浴槽内の外周側の底部に移動させることを特徴とする半田鍍金装置。
In a solder plating apparatus provided with a bathtub for containing solder for dipping the plated material, and a heating device for heating the solder in the bathtub to a molten state,
A support device that rotatably supports the bathtub including the heating device;
A rotating device for rotating the bathtub on the support device,
A solder plating apparatus, wherein the intermetallic compound formed in the bathtub is moved to the bottom on the outer peripheral side in the bathtub by the rotation of the bathtub.
前記半田内の金属間化合物を除去する除去手段を備え、
該除去手段は、前記浴槽の低部に設けた開閉可能な排出口又は前記浴槽の内壁に沿って着脱可能に配置され且つ前記浴槽の回転により溶融状態の前記半田内で外側に移動する前記金属間化合物を捕集するコレクタとを含む請求項3に記載の半田鍍金装置。
A removing means for removing the intermetallic compound in the solder;
The removing means is disposed in a detachable manner along an openable / closable discharge port provided in a lower portion of the bathtub or an inner wall of the bathtub, and moves outward in the molten solder by the rotation of the bathtub. The solder plating apparatus according to claim 3, further comprising a collector that collects intermetallic compounds.
前記半田は、前記被鍍金材を構成する少なくとも一部の金属と同一の元素と、錫とを含む半田である請求項3又は4に記載の半田鍍金装置。  5. The solder plating apparatus according to claim 3, wherein the solder is a solder containing at least a part of the same metal as the metal constituting the plated material and tin.
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