JP3980809B2 - Electrolytic treatment equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrolytic processing apparatus that performs plating, etching, or the like on the surface of a substrate to be processed.
[0002]
[Prior art]
Electrolytic treatment, particularly electrolytic plating, is widely used as a method for forming a metal film. In recent years, its effectiveness (low cost, hole filling characteristics, etc.) has been attracting attention and used in the semiconductor industry, such as electrolytic copper plating for copper multilayer wiring and electrolytic gold plating for bump formation.
[0003]
Here, as a method of performing copper plating on a semiconductor substrate, a method in which a plating solution is always put in a plating tank, such as a cup type or a dip type, and a substrate is immersed therein, and plating is performed only when the substrate is supplied to the plating tank. There are various methods such as a method of applying a liquid.
[0004]
In addition to the unit that performs the plating process, the conventional plating apparatus of this type includes a plurality of units such as a unit that performs a pretreatment process incidental to plating, a unit that performs a cleaning / drying process after plating, and the like. A transport robot for transporting substrates between the units was provided. The substrate is subjected to predetermined processing in each unit while being transported between these units.
[0005]
However, in the above-described conventional plating apparatus, a unit is provided for each process, and the substrate is transported to each unit for processing. Therefore, the apparatus is considerably complicated and difficult to control, and has a large occupied area. And the manufacturing cost is considerably high.
[0006]
Therefore, the present inventor invented an electrolytic plating apparatus as shown in FIG. This electroplating apparatus is an electroplating apparatus that employs a so-called face-up method. The substrate W is placed on the substrate platform 30 with the substrate W facing upward, and the periphery of the surface of the substrate W is formed in a ring shape. It is sealed by the contact of the tip. Further, outside the lip seal 34 on the surface of the substrate W, a contact 36 that contacts the conductive layer on the surface of the substrate W and applies a cathode potential to the substrate W is provided. Above the substrate W, a disk-shaped porous body (electrolyte impregnated material made of a water retention material) 40 and a disk-shaped anode 38 are held by a holding member 32 with a predetermined interval therebetween. . Here, the anode 38 is provided with a large number of pore-shaped plating solution conduction holes 39 penetrating in the thickness direction, and the plating solution is distributed and supplied to the plating solution conduction holes 39 on the anode 38. An introduction pipe 41 is installed.
[0007]
Then, the plating solution 10 supplied from the plating solution introduction pipe 41 to the surface of the porous body 40 through the plating solution conduction hole 39 of the anode 38 penetrates into the porous body 40 and is impregnated therein, and further supplied from the lower surface thereof. The inner space between the substrate W and the porous body 40 and sealed by the lip seal 34 is filled (hereinafter, supplying the plating solution 10 to the surface of the substrate W is referred to as “liquid filling”). When a predetermined voltage is applied between the anode 38 and the substrate W to cause a direct current to flow, the entire surface of the conductive layer previously formed on the surface of the substrate W is plated.
[0008]
On the other hand, when cleaning the substrate W, the holding member 32 to which the anode 38 or the like is attached is moved from the top of the substrate W to another place, and the plating solution 10 in the lip seal 34 is sucked by a plating solution suction means (not shown). Then, the substrate W is lowered together with the substrate mounting table 30 and is separated from the lip seal 34 and the contact 36. In this state, a cleaning liquid or the like is supplied onto the substrate W to perform cleaning. The substrate W is dried by rotating the substrate W by the substrate mounting table 30. When the substrate W is preprocessed, the pretreatment liquid may be supplied onto the substrate W in a state where the lip seal 34 and the contact 36 are separated from the substrate W before plating. Thus, according to this electrolytic plating apparatus, since various processes for plating can be performed by one unit, the apparatus is simplified, the control is facilitated, the installation area is reduced, and the manufacturing cost can be reduced.
[0009]
By the way, the reason why the porous body 40 is installed in this electrolytic plating apparatus is as follows.
(1) In this electrolytic plating apparatus, it is desirable to minimize the amount of plating solution used per substrate W by shortening the distance between the anode 38 and the substrate W (hereinafter referred to as “distance between electrodes”) as much as possible. However, if the distance between the electrodes is shortened and the porous body 40 is not installed, the plating film thickness of each part on the surface of the substrate W may be nonuniform. In an electric circuit from the vicinity of the outer periphery of the anode 38 to the vicinity of the outer periphery of the substrate W through the plating solution 10, the resistance value between the anode 38 and the contact 36 depends on the plating solution interposed between the anode 38 and the substrate W. In the electric circuit from the central portion of the anode 38 to the central portion of the substrate W through the plating solution 10, the resistance value between the anode 38 and the contact 36 is interposed between the anode 38 and the substrate W. This is because the resistance value due to the plating solution and the resistance value from the center of the substrate W to the contact point 36 due to the thin conductive layer formed on the surface of the substrate W are added, and the currents flowing in both circuits are different. Therefore, by interposing the porous body 40 impregnated with the plating solution 10 between the anode 38 and the substrate W to pass electricity but having a higher resistance than the plating solution 10, the resistance values of the two electric circuits are the same. By increasing the value, the ratio of the total resistance values of the two electric circuits is brought close to 1, and the plating film thickness on each surface of the substrate W is made uniform.
[0010]
(2) This is for preventing the surface of the anode 38 from being dried.
[0011]
(3) When the plating solution 10 supplied from the anode 38 side is directly sprayed onto the substrate W, damage is caused to the conductive layer on the surface of the substrate W at the sprayed portion (reduction of the conductive layer due to local jetting). Therefore, this damage is reduced by interposing the porous body 40, and the plating film thickness is made uniform.
[0012]
On the other hand, as described above, the distance between the electrodes is shortened as much as possible in order to reduce the amount of plating solution used. However, if air bubbles are interposed between the electrodes, the plating film thickness becomes non-uniform. It is as follows.
[0013]
9 and 10 are views showing a state in which the plating solution is filled between the electrodes by this electrolytic plating apparatus, FIG. 9 is a schematic sectional side view, and FIG. 10 shows a diffusion state of the plating solution on the substrate W. It is a schematic plan view. As shown in FIG. 10, the plating solution conduction holes 39 provided in the anode 38 are arranged in a cross shape so that the center thereof coincides with the center of the substrate W. As shown in FIG. 9, the plating solution distributed from the plating solution introduction pipe 41 to each plating solution conduction hole 39 of the anode 38 and supplied from the tip thereof slightly diffuses in the porous body 40 having a thickness of about 5 to 20 mm. While reaching the surface of the substrate W, the number of circular liquid columns R corresponding to the respective plating solution conduction holes 39 is formed between the surface of the substrate W and the porous body 40 (interval of about 1 mm). After that, the plurality of liquid columns R are connected to each other in a cross shape as shown by dotted lines in FIG. 10 and the thickness of the lines is increased to fill the plating solution 10 while reliably removing air from the substrate W. To go. The diffusion of the plating solution inside the porous body 40 reduces damage to the conductive layer when the plating solution reaches the surface of the substrate W as described above. The arrangement of the plating solution conduction holes 39 for filling the plating solution without leaving bubbles between the electrodes is not limited to the above arrangement, and may be, for example, a single linear arrangement, or any one place. Alternatively, only one or a plurality of plating solution conduction holes 39 may be disposed. In short, any arrangement may be used as long as it does not leave bubbles.
[0014]
However, the above electrolytic plating apparatus has the following points to be improved.
{Circle around (1)} The outlet shape of the plating solution conduction hole 39 that is in contact with the porous body 40 expands as shown in FIG. 11 due to changes over time while the plating process is repeated (E portion in FIG. 11). In this case, as shown in the figure, the plating solution reaches the surface of the substrate W while being largely diffused into the porous body 40 during liquid filling. As a result, the liquid column R of the amount determined at the initially determined position of the porous body 40 cannot be formed, and the coupling of the liquid column R is disturbed. At this time, air is entrained, and bubbles A are formed as shown in FIG. It remains and accumulates between the porous body 40 and the substrate W, and ideal liquid filling is inhibited. If plating is performed in this state, the plating film thickness becomes non-uniform.
[0015]
(2) When the thickness of the porous body 40 is thick or when the density is high (porosity is low), the resistance of the plating solution passing through the porous body 40 during liquid filling increases, and as a result, a predetermined amount from the predetermined position of the porous body 40 The plating solution does not come out, and the coupling of the liquid columns is disturbed. At this time, air is entrained, and the bubbles are deposited between the porous body 40 and the substrate W, so that the ideal liquid filling is inhibited, and plating is performed in this state. And inconsistent plating thickness.
[0016]
[Problems to be solved by the invention]
The present invention has been made in view of the above points, and its purpose is to supply an electrolytic solution into an electrolytic solution-impregnated material (porous body) and supply it from the opposite side of the electrolytic solution-impregnated material. It is an object of the present invention to provide an electrolytic processing apparatus in which bubbles are not caught and deposited between an electrolyte-impregnated material and a substrate even if the electrolytic processing apparatus has a structure filled between the material and the substrate to be processed.
[0017]
[Means for Solving the Problems]
In order to solve the above problems, the present invention has a contact point between one of an anode and a cathode. Semiconductor substrate And the Semiconductor substrate Fill the electrolyte solution between the other electrode facing Semiconductor substrate In the electrolytic treatment apparatus for performing the electrolytic treatment of Semiconductor substrate Electrolyte impregnating material between The electrolyte impregnated material and the surface of the semiconductor substrate are not in contact with each other over the entire surface. The other electrode is provided with an electrolytic solution conduction hole for supplying an electrolytic solution into the electrolytic solution impregnation material, and a pipe is inserted into the electrolytic solution conduction hole, and the electrolytic solution impregnation material is inserted through the tube. Supply the supplied electrolyte from the opposite side of the electrolyte impregnated material. Formed between the whole surface of the non-contact electrolyte impregnated material and the semiconductor substrate surface It is characterized by filling the gap. It is desirable to select a material that does not corrode the electrolyte. Therefore, even if the electrolytic treatment process is repeated with this electrolytic treatment device, the inner diameter of the tip of the tube does not spread over time, so that the ideal liquid-filled state at the beginning of production can be performed in the same manner even if time passes. Air is entrained and bubbles are impregnated with electrolyte Semiconductor substrate In this case, the desired electrolytic treatment is always obtained.
[0018]
Further, the invention is characterized in that an electrolyte passage portion is provided in the electrolyte impregnated material so as to be continuous with the electrolyte introduction hole. Then, by adjusting the position of the bottom surface of the electrolyte passage portion, the distance between the bottom surface of the electrolyte passage portion and the lower surface of the electrolyte-impregnated material is adjusted to a predetermined dimension, whereby the plating solution passes through the electrolyte-impregnated material. Can be reduced to a desired resistance. Therefore, even when a thick material or a material with high density (low porosity) is used as the electrolyte-impregnated material, it is possible to reduce the resistance of the electrolyte-impregnated material to pass through when the solution is filled. An appropriate amount of plating solution can be discharged from a predetermined position of the impregnating material, so that air is not involved and bubbles do not accumulate between the electrolytic solution impregnating material and the substrate to be processed, and a desired electrolytic treatment can always be obtained. .
[0019]
The present invention also has a contact point between one of the anode and the cathode. Semiconductor substrate And the Semiconductor substrate Fill the electrolyte solution between the other electrode facing Semiconductor substrate In the electrolytic treatment apparatus for performing the electrolytic treatment of Semiconductor substrate Electrolyte impregnating material between The electrolyte impregnated material and the surface of the semiconductor substrate are not in contact with each other over the entire surface. The electrolyte solution impregnated with the electrolyte supplied into the electrolyte impregnation material from the other electrode side through the electrolyte passage portion is formed by forming an electrolyte passage portion of a predetermined depth in the electrolyte impregnation material Supply from the opposite side of the material Formed between the whole surface of the non-contact electrolyte impregnated material and the semiconductor substrate surface It is characterized by filling the gap. Even if this electrolytic treatment process is repeated, the inner diameter of the tip of the electrolyte passage portion does not increase over time, so that the ideal liquid filling state at the beginning of manufacture can be performed in the same manner even after time has passed, so air Is involved and the bubbles are impregnated with electrolyte Semiconductor substrate In this case, the desired electrolytic treatment is always obtained.
[0020]
Further, the present invention is characterized in that a liquid reservoir for storing an electrolytic solution is provided between the other electrode and the electrolyte-impregnated material, and the electrolytic solution stored in the liquid reservoir is supplied into the electrolyte-impregnated material. And
[0021]
According to the present invention, the electrolyte passage portion is formed by making the density of the portion that becomes the electrolyte passage portion of the electrolyte-impregnated material lower than that of the surrounding portion, or by a passage made of holes. It is characterized by doing.
[0022]
The present invention also provides an electrolytic process in which an electrolytic solution is filled between the substrate to be processed having a contact point between one of the anode and the cathode and the other electrode opposed to the substrate to be processed. In the processing apparatus, an electrolyte-impregnated material is installed between the other electrode and the substrate to be processed, and the electrolyte-impregnated material has different passage resistance of the electrolyte passing through the electrolyte-impregnated material depending on the location. The electrolyte solution supplied into the electrolyte solution impregnated material from the other electrode side is supplied from the opposite surface of the electrolyte solution impregnated material in a supply amount according to the location, and the electrolyte solution impregnated material and the substrate to be processed It is characterized by filling in between.
[0023]
Further, the invention is characterized in that at least a part of the electrolyte impregnated material is made of a water retaining material.
[0024]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[Embodiment in which tube 45 is inserted inside electrolyte solution introduction hole (plating solution introduction hole) 39 of anode (electrode) 38]
FIG. 1 is a schematic configuration diagram of an electroplating apparatus using an embodiment of the present invention. That is, this electrolytic plating apparatus (electrolytic treatment apparatus) has substantially the same configuration as the electrolytic plating apparatus shown in FIG. That is, this electroplating apparatus is also an electroplating apparatus that employs a so-called face-up method. The substrate W is placed on the substrate platform 30 with the surface facing upward, and a lip seal formed in a ring shape around the surface of the substrate W. The tip of 34 abuts and is sealed. Further, outside the lip seal 34 on the surface of the substrate W, a contact 36 that contacts the conductive layer on the surface of the substrate W and applies a cathode potential to the substrate W is provided. Above the substrate W, a disk-shaped porous body 40 and a disk-shaped anode 38 are held by a holding member 32 through a predetermined interval. Here, a large number of plating solution conduction holes 39 penetrating in the thickness direction are provided in the anode 38, and a plating solution introduction pipe 41 for distributing and supplying the plating solution is installed on the anode 38.
[0025]
On the other hand, the porous body 40 is made of a porous ceramic material or a porous resin material. In this example, the porous body 40 is made of SiC having a porosity of 20% and an average pore diameter of 50 μm (of course, it may be made of other various materials, It is desirable that the pore diameter is 20 to 300 μm and the porosity is 10 to 95%.) By containing the plating solution 10 inside and self-holding, electricity is conducted but the electric conductivity is smaller than that of the plating solution 10. It is comprised so that it may become. The anode 38 is completely covered with the holding member 32 and the porous body 40.
[0026]
In this embodiment, the plating solution introduction tube 41 itself is provided with a tube 45 communicating therewith, this tube 45 is inserted into the plating solution conduction hole 39 of the anode 38, and its tip abuts against the surface of the porous body 40. I am doing so. That is, in this embodiment, the plating solution 10 can be supplied to the surface of the porous body 40 without touching the anode 38 at all. The plating solution introduction pipe 41 and the pipe 45 are integrally formed of a synthetic resin that is not affected by the plating solution.
[0027]
Then, the plating solution supplied directly from the plating solution introducing pipe 41 to the surface of the porous body 40 through the tube 45 reaches the surface of the substrate W while slightly diffusing inside the porous body 40, and is circular between the surface of the substrate W and the porous body 40. A plurality of liquid columns R are formed, and the plurality of liquid columns R are coupled to each other on the substrate W as described with reference to FIG. 10 to fill the substrate W with the plating solution.
[0028]
Even if this plating process is repeated, the inner diameter of the tip of the tube 45 does not spread over time, so that the ideal liquid column R does not collapse over time. No entrainment occurs, bubbles do not accumulate between the porous body 40 and the substrate W, and the plating film thickness does not become uneven.
[0029]
FIG. 2 is a schematic configuration diagram of an electroplating apparatus using another embodiment of the present invention. In this electrolytic plating apparatus, the difference from the embodiment shown in FIG. 1 is that instead of forming the tube 45 integrally with the plating solution introduction tube 41, a tube separately prepared in the plating solution conduction hole 39 of the anode 38. 47 is inserted. Also in this case, the tube 47 is made of a material that is not affected by the plating solution, and its tip (lower end) is brought into contact with the upper surface of the porous body 40.
[0030]
Even in this configuration, the plating solution does not directly contact the anode 38 as in the embodiment shown in FIG. 1, and even if the plating process is repeated, the inner diameter of the tip of the tube 47 increases over time. There is nothing. Accordingly, the liquid column R supplied from the porous body 40 does not collapse over time, and an ideal state is always maintained, and air is not involved.
[0031]
[Embodiment in which electrolyte passage portion is provided in porous body 40]
FIG. 3 is a schematic configuration diagram of an electroplating apparatus using the embodiment of the present invention. In this electrolytic plating apparatus, the plating solution introduction pipe 41 shown in FIG. 1 is not provided, and the anode 38 and the porous body 40 (40-1, 40-2) are held by the holding member 32. A liquid reservoir 50 is provided between the anode 38 and the porous body 40. That is, the anode 38 is not provided with a plurality of thin plating solution conduction holes 39 as shown in FIG. 1, and one thick plating solution supply unit 55 is provided at the center thereof.
[0032]
On the other hand, the porous body 40 is configured by superimposing two upper and lower members (an upper porous body 40-1 and a lower porous body 40-2). The upper porous body 40-1 is provided with a plurality of thin electrolyte upper and lower electrolyte passage portions 57. In the electrolyte passage portion 57, a portion that becomes the electrolyte passage portion 57 is configured with a low-density (high porosity) pore structure, and the other portions are configured with a high-density pore structure. It is formed by that. The lower porous body 40-2 is entirely composed of a low-density pore structure.
[0033]
When the plating solution is supplied from the plating solution supply unit 55 of the anode 38 configured as described above, the plating solution 10 is first filled in the solution reservoir 50, and then mainly passes through the electrolyte passage portion 57 having a low resistance to form the lower porosity. Reaches the surface of the body 40-2, reaches the surface of the substrate W while diffusing inside the lower porous body 40-2, and forms a plurality of circular liquid columns R between the surfaces of the substrate W and the lower porous body 40-2. The plurality of liquid columns R are coupled to each other as described with reference to FIG. 10, and the substrate W is filled with the plating solution while excluding air.
[0034]
Even if this plating step is repeated, the inner diameter of the tip of the electrolyte passage portion 57 does not spread over time, so that the ideal liquid column R does not collapse over time. Air entrainment due to the disorder of bonding does not occur, and bubbles are not deposited between the lower porous body 40-2 and the substrate W, and the plating film thickness is not uniform.
[0035]
FIG. 4 is a schematic configuration diagram of an electroplating apparatus according to another embodiment of the present invention. This electrolytic plating apparatus is different from the embodiment shown in FIG. 3 only in the structure of the porous body 40. That is, the porous body 40 is provided with an electrolyte solution passage portion 59 formed of holes therein. The electrolyte passage portion 59 is formed by branching from a main passage 61 provided at the center of the upper surface of the porous body 40. The tip of each electrolyte passage portion 59 ends inside the porous body 40.
[0036]
When the plating solution is supplied from the plating solution supply unit 55 of the anode 38, the plating solution 10 is first filled in the solution reservoir 50, and then introduced into each electrolyte passage 59 from the main passage 61 of the porous body 40. A plurality of circular liquid columns R are formed between the substrate W and the surface of the porous body 40 while diffusing inside the porous body 40 from the lower end, and the plurality of liquid columns R are as described above with reference to FIG. Are bonded to each other on the substrate W, and the substrate W is filled with the plating solution.
[0037]
Even if this plating step is repeated, the inner diameter of the tip of the electrolyte passage portion 59 does not increase over time, so that the ideal liquid column R does not collapse over time, and therefore the liquid column Air entrainment due to the R coupling disorder does not occur, and bubbles are not deposited between the porous body 40 and the substrate W, and the plating film thickness is not uniform.
[0038]
Further, by adjusting the position of the tip (bottom surface) of the electrolyte passage portion 59, the distance from the tip of the electrolyte passage portion 59 to the lower surface of the porous body 40 can be shortened. The resistance at the time of passing can be reduced. Therefore, even when a porous body 40 having a large thickness or a high density (low porosity) is used, the resistance of the plating solution passing through the porous body 40 during liquid filling As a result, an appropriate amount of plating solution can be discharged from a predetermined position of the porous body 40. Therefore, also from this point, air is not caught due to the disorder of the coupling of the liquid column R, and bubbles are not deposited between the porous body 40 and the substrate W and the plating film thickness is not uniform.
[0039]
Since it is difficult to form the electrolyte passage portion 59 composed of holes in the porous body 40, the porous body 40 is prepared by dividing the porous body 40 vertically into three parts along lines A and B shown in FIG. You may integrate and comprise by joining and fixing.
[0040]
[Embodiment in which a pipe is inserted into the plating solution introduction hole (electrolyte introduction hole) 39 of the anode 38 and the electrolyte passage portion 59 is provided in the porous body 40]
FIG. 5 is a schematic configuration diagram of an electroplating apparatus using the embodiment of the present invention. In this electrolytic plating apparatus, as in the embodiment shown in FIG. 1, a pipe 45 communicating with this is provided in the plating liquid introduction pipe 41 itself made of a synthetic resin (made of a material that is not affected by the plating liquid). 38 is inserted into the plating solution conduction hole 39 and the tip thereof is brought into contact with the surface of the porous body 40, and an electrolyte passage portion 59 made of a fine hole that does not penetrate the portion of the porous body 40 where the tube 45 comes into contact is provided. .
[0041]
Then, the plating solution supplied directly from the plating solution introduction pipe 41 through the tube 45 into the electrolyte passage portion 59 of the porous body 40 penetrates into the porous body 40 while slightly diffusing from the bottom surface of the electrolyte solution passage portion 59. A plurality of circular liquid columns R are formed between the surface of the substrate W and the porous body 40, and the plurality of liquid columns R are coupled to each other on the substrate W as described with reference to FIG. The air is filled with plating solution while extruding air.
[0042]
Even when this plating step is repeated, the inner diameter of the tube 45 and the inner diameter of the bottom surface of the electrolyte passage portion 59 do not spread over time, so that the ideal liquid column R collapses over time. Therefore, air is not entrained due to the disorder of the coupling of the liquid column R, and bubbles are not deposited between the porous body 40 and the substrate W and the plating film thickness is not uniform.
[0043]
At the same time, the passage resistance when the plating solution passes through the porous body 40 is reduced by the length provided with the electrolyte passage portion 59, so that the porous body 40 is thick or has a high density (low porosity). Even when a liquid is used, an appropriate amount of plating solution can be taken out from a predetermined position of the porous body 40 when the liquid is filled. From this point, air is not entrained due to the disorder of the coupling of the liquid column R, and bubbles are formed in the porous body. It does not deposit between 40 and the substrate W and the plating film thickness does not become non-uniform.
[0044]
FIG. 6 is a schematic configuration diagram of an electroplating apparatus using another embodiment of the present invention. In this electrolytic plating apparatus, the difference from the embodiment shown in FIG. 5 is that the plating solution introduction tube 41 is provided in the plating solution conduction hole 39 of the anode 38 and the porous body 40 instead of providing the tube 45 integrally therewith. This is the point that a separately prepared tube 47 is inserted into the electrolyte passage portion 59. In this case as well, the tube 47 is made of a material that is not affected by the plating solution.
[0045]
Even with such a configuration, as in the embodiment shown in FIG. 5, even if the plating process is repeated, the inner diameter of the tip of the tube 47 does not increase over time, and the ideal liquid column R is maintained over time. Therefore, there is no collapse of the air, and air entrainment due to the disorder of the coupling of the liquid column R does not occur, and bubbles are not deposited between the porous body 40 and the substrate W and the plating film thickness is not uniform. At the same time, since the tube 47 enters the porous body 40, the resistance when the plating solution passes through the porous body 40 is reduced. For example, the porous body 40 is thick or has a high density (low porosity). Even in the case of using, an appropriate amount of plating solution is supplied from a predetermined position of the porous body 40, and air entrainment due to disorder of the coupling of the liquid column R does not occur, and bubbles are deposited between the porous body 40 and the substrate W. Therefore, the plating film thickness does not become uneven.
[0046]
[Embodiment in which the plating resistance of the plating solution passing through the porous body 40 varies depending on the location of the porous body 40]
FIG. 7 is a schematic configuration diagram of an electroplating apparatus using the embodiment of the present invention. This electrolytic plating apparatus is provided with a pipe 45 communicating with a plating solution introducing pipe 41 itself made of a synthetic resin as in the embodiment shown in FIG. 1, but unlike FIG. 1, the joining of the anode 38 and the porous body 40 is performed. The anode 38 side protrudes at the center of the surface and the porous body 40 side is recessed. If comprised in this way, since the plating solution supplied from the pipe | tube 45 of the center vicinity is supplied from the lower surface of the porous body 40 with little passage resistance, the supply amount will increase compared with another part. That is, if the desired plating solution does not come out depending on the location, the passage resistance of the plating solution of the porous body 40 at that portion is reduced so that the desired plating solution comes out from that portion (appropriate amount of plating solution) This may vary depending on the location of the porous body 40), thereby preventing disturbance of the coupling of the liquid column R to prevent air entrainment, and bubbles are deposited between the porous body 40 and the substrate W to form a plating film Prevent uneven thickness.
[0047]
Such adjustment can also be achieved, for example, by making the position of the bottom of the electrolyte passage portion 59 shown in FIGS. 5 and 6 different in each electrolyte passage portion 59. That is, by varying the passage resistance of the plating solution passing through the porous body 40 depending on the location, the supply amount of the plating solution supplied from each part of the porous body 40 can be changed, and the optimum plating solution filling state can be selected. it can.
[0048]
Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. In addition, any shape and material not directly described in the specification and drawings are within the scope of the technical idea of the present invention as long as the effects and advantages of the present invention are exhibited.
[0049]
In each of the above-described embodiments, an example in which the present invention is applied to an electroplating apparatus has been described. However, instead, the present invention may be applied to an electroetching apparatus that uses a substrate as an anode.
[0050]
【The invention's effect】
As described above in detail, according to the present invention, the electrolyte solution is supplied into the electrolyte solution impregnated material and supplied from the opposite side of the electrolyte solution impregnated material to fill the space between the electrolyte solution impregnated material and the substrate to be processed. Even in the case of an electrolytic processing apparatus, an excellent effect that bubbles are not trapped and deposited between the electrolytic solution impregnated material and the substrate to be processed, and an ideal electrolytic treatment is performed to obtain a desired electrolytic treatment. Have
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an electrolytic plating apparatus according to the present invention.
FIG. 2 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 3 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 4 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 5 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 6 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 7 is a schematic configuration diagram of an electroplating apparatus according to the present invention.
FIG. 8 is a schematic configuration diagram of an electroplating apparatus as a basis of the present invention.
FIG. 9 is a schematic configuration diagram of an electroplating apparatus showing a state in which a plating solution is filled between electrodes by the electroplating apparatus.
FIG. 10 is a schematic plan view showing a state in which a plating solution is filled and diffused between electrodes by an electrolytic plating apparatus.
FIG. 11 is a diagram illustrating an example in which irregular liquid columns are generated.
FIG. 12 is a diagram showing a state in which bubbles are involved.
[Explanation of symbols]
W substrate (substrate to be processed)
10 Plating solution (electrolyte)
30 Substrate mounting table
32 Holding member
34 Lip seal
36 contacts
38 Anode (electrode member)
39 Plating solution conduction hole (electrolyte conduction hole)
40 Porous body (electrolyte impregnated material)
41 Plating solution introduction pipe (electrolyte supply means)
45 tubes
47 tubes
50 Liquid reservoir
55 Plating solution supply part
40-1 Upper porous body
40-2 Lower porous body
57 Electrolyte passage
59 Electrolyte passage
61 Main passage

Claims (7)

In the electrolytic processing apparatus for electrolytic treatment of the semiconductor substrate meet electrolyte between the other electrode is opposite to the semiconductor substrate and the semiconductor substrate having a contact point between the one electrode of the anode and the cathode,
An electrolyte-impregnated material is disposed between the other electrode and the semiconductor substrate so that the electrolyte-impregnated material and the surface of the semiconductor substrate are not in contact with each other over the entire surface. An electrolyte conducting hole is provided in the impregnating material, a pipe is inserted into the electrolyte conducting hole, and the electrolyte supplied into the electrolyte impregnating material is supplied from the opposite surface of the electrolyte impregnating material through the pipe. And filling the gap formed between the electrolyte solution impregnated material and the semiconductor substrate surface which are not in contact with each other .   2. The electrolytic processing apparatus according to claim 1, wherein the electrolytic solution impregnated material is provided with an electrolytic solution passage portion so as to be continuous with the electrolytic solution conduction hole. In the electrolytic processing apparatus for electrolytic treatment of the semiconductor substrate meet electrolyte between the other electrode is opposite to the semiconductor substrate and the semiconductor substrate having a contact point between the one electrode of the anode and the cathode,
An electrolyte-impregnated material is placed between the other electrode and the semiconductor substrate so that the electrolyte-impregnated material and the surface of the semiconductor substrate are not in contact with each other , and a predetermined depth is formed in the electrolyte-impregnated material. By forming the electrolytic solution passage part, the electrolytic solution supplied from the other electrode side through the electrolytic solution passage part into the electrolytic solution impregnated material is supplied from the opposite surface of the electrolytic solution impregnated material and is not in contact with the electrolytic solution. An electrolytic processing apparatus that fills a gap formed between the entire surface of an impregnation material and a semiconductor substrate surface .   4. A liquid reservoir for storing an electrolytic solution is provided between the other electrode and the electrolyte-impregnated material, and the electrolytic solution stored in the liquid reservoir is supplied into the electrolyte-impregnated material. The electrolytic treatment apparatus described.   The electrolyte passage portion is configured by making the density of the portion that becomes the electrolyte passage portion of the electrolyte-impregnated material lower than that of the surrounding portion, or is configured by a passage made of holes. The electrolytic treatment apparatus according to claim 2, 3, or 4. In an electrolytic processing apparatus for performing electrolytic processing of a substrate to be processed by filling an electrolytic solution between a substrate to be processed having a contact point between one electrode of an anode and a cathode and the other electrode opposed to the substrate to be processed,
An electrolyte-impregnated material is installed between the other electrode and the substrate to be processed, and the electrolyte-impregnated material is configured such that the passage resistance of the electrolyte passing through the electrolyte-impregnated material differs depending on the location. Then, the electrolytic solution supplied into the electrolytic solution impregnated material from the other electrode side is supplied from the opposite surface of the electrolytic solution impregnated material in a supply amount according to the location to fill between the electrolytic solution impregnated material and the substrate to be processed. An electrolytic treatment apparatus characterized by the above.   The electrolytic treatment apparatus according to claim 1, wherein at least part of the electrolytic solution impregnated material is made of a water retention material.

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