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JP3990183B2 - Power supply circuit and semiconductor integrated circuit - Google Patents
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JP3990183B2 - Power supply circuit and semiconductor integrated circuit - Google Patents

Power supply circuit and semiconductor integrated circuit Download PDF

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Publication number
JP3990183B2
JP3990183B2 JP2002118610A JP2002118610A JP3990183B2 JP 3990183 B2 JP3990183 B2 JP 3990183B2 JP 2002118610 A JP2002118610 A JP 2002118610A JP 2002118610 A JP2002118610 A JP 2002118610A JP 3990183 B2 JP3990183 B2 JP 3990183B2
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Japan
Prior art keywords
terminal
power supply
output
current limiting
limiting resistor
Prior art date
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JP2002118610A
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JP2003316453A (en
Inventor
裕司 森川
敏文 西島
晴男 西浦
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Toshiba Corp
Toyota Motor Corp
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Toshiba Corp
Toyota Motor Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、電源回路に関するもので、特に車載用として用いられる半導体集積回路に関する。
【0002】
【従来の技術】
従来の電源回路は、図3に示すように、陰極を低位電源VSSに接続した直流電源103と、エミッタ端子を直流電源103の陽極に接続し、コレクタ端子を出力端子105に接続したpnp型トランジスタQ101と、出力端子105に接続された制御回路102と、制御回路102の出力側に接続され、pnp型トランジスタQ101のベース端子及び直流電源103の陽極に接続された駆動回路と、駆動回路の入力及び出力端子105間に接続された位相補償コンデンサC101により構成される。
【0003】
制御回路102は出力電圧検出端子(図面になし)からの出力電圧Voutを入力とし、出力電圧が基準電圧を超えると制御信号を出力する。駆動回路101は、制御信号を更に位相補償コンデンサC101により位相補償した信号を入力とし、pnp型トランジスタQ102を駆動する。
【0004】
【発明が解決しようとする課題】
しかし、図3で示した電源回路の駆動回路101は、入力段にpnp型トランジスタQ102を用いていたために、図4に示す時刻T1において、駆動回路101の入力側に、図4(b)に示すようなEMIノイズ等の高周波ノイズにより電圧が印加されると、駆動回路101の入力側(入力段に用いられるpnp型トランジスタQ102のベース端子)の電圧波形は、図4(c)に示すようにpn接合により半波整流された波形となり、結果として出力電圧Voutは、図4(a)に示すように上昇してしまうという問題があった。
【0005】
本発明の目的は、EMIノイズ等の高周波ノイズの影響により出力電圧が変動することを抑制し、安定した電圧を出力する電源回路及び半導体集積回路を提供することである。
【0006】
【課題を解決するための手段】
上記目的を達成するために、本発明の第1の特徴は、陰極を低位電源に接続した直流電源と、一端を出力端子に接続した位相補償コンデンサと、直流電源の陽極に接続されたエミッタ端子、出力端子に接続されたコレクタ端子を有するpnp型トランジスタと、出力端子に入力側が接続され、直流電源に接続され、直流電源から駆動電源が供給さ、所定の基準電圧に応じた増幅信号を出力するアンプを有する制御回路と、ダイオードのカソード端子側及び低位電源に接続されたドレイン端子、アンプの出力側及び位相補償コンデンサの他端に接続したゲート端子を有するpMOSトランジスタと、直流電源の陽極に一端を接続した電流制限抵抗と、電流制限抵抗の他端にアノード端子を接続したダイオードと、pMOSトランジスタのソース端子に接続されたエミッタ端子、電流制限抵抗の他端に接続されたベース端子、pnp型トランジスタのベース端子に接続されたコレクタ端子を有するnpn型トランジスタとを有する駆動回路とを備える電源回路であることを要旨とする。
【0007】
上記目的を達成するために、本発明の第2の特徴は、電源端子、駆動端子、位相補償端子、出力電圧検出端子を有し、出力電圧検出端子に入力側が接続され、電源端子に接続され、電源端子から駆動電源が供給され、所定の基準電圧に応じた増幅信号を出力するアンプを有する制御回路と、電源端子に一端を接続した電流制限抵抗と、電流制限抵抗の他端にアノード端子側を接続したダイオードと、ダイオードのカソード端子側及び低位電源に接続されたドレイン端子、アンプの出力側及び位相補償端子に接続したゲート端子を有するpMOSトランジスタと、pMOSトランジスタのソース端子に接続されたエミッタ端子、電流制限抵抗の他端に接続されたベース端子、駆動端子に接続されたコレクタ端子を有するnpn型トランジスタとを有する駆動回路とを備える半導体集積回路であることを要旨とする。
【0008】
上記発明によれば、EMIノイズ等の高周波ノイズの影響により出力電圧が変動することを抑制し、安定した電圧を出力する電源回路及び半導体集積回路を得ることができる。
【0009】
【発明の実施の形態】
次に、図面を参照して本発明の実施の形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。
【0010】
本発明の実施の形態に係る電源回路は、図1に示すように、電源端子11、駆動端子12、位相補償端子13、出力電圧検出端子14を有する半導体集積回路100と、陽極を電源端子11に接続され、陰極を低位電源VSSに接続された直流電源3と、駆動端子12に接続されたベース端子、出力端子5及び出力電圧検出端子14に接続されたコレクタ端子、電源端子11及び直流電源3の陽極に接続されたエミッタ端子とを有するpnp型トランジスタQ1と、位相補償端子13及び出力端子5の間に接続された位相補償コンデンサC1と、電源端子11と低位電源VSSとの間に接続された入力コンデンサC2と、出力端子5及び低位電源VSSの間に接続された出力コンデンサC3とを備える。
【0011】
半導体集積回路100は、駆動回路1と、駆動回路1の入力側に接続された制御回路2を備える。
【0012】
更に、駆動回路1は、一端を電源端子11に接続した電流制限抵抗R3と、電流制限抵抗R3の他端にアノード端子を接続した第1のダイオードD1と、第1のダイオードD1のカソード端子にアノード端子を接続した第2のダイオードD2と、第2のダイオードD2のカソード端子にアノード端子を接続した第3のダイオードD3と、第3のダイオードD3のカソード端子にアノード端子を接続し、カソード端子を低位電源VSSに接続した第4のダイオードD4と、電流制限抵抗R3の他端に接続されたベース端子、駆動端子12に接続されたコレクタ端子、エミッタ端子を有するnpn型トランジスタQ2と、npn型トランジスタQ2のエミッタ端子に接続されたソース端子、第4のダイオードD4のカソード端子及び低位電源VSSに接続されたドレイン端子、制御回路2の出力側に接続されたゲート端子を有するpMOSトランジスタP1とを備える。
【0013】
制御回路2は、一端を出力電圧検出端子14に接続した第1の分割抵抗R1と、一端を低位電源VSSに接続した第2の分割抵抗R2と、第1の分割抵抗R1及び第2の分割抵抗R2の他端に正入力端子を接続し、一端を低位電源VSSに接続した基準電圧源4の他端に負入力端子を接続し、位相補償端子13及び駆動回路1の入力側(pMOSトランジスタP1のゲート端子)に出力側を接続されたアンプ20を備える。
【0014】
本発明の実施の形態における電源回路は、上記のように構成され、制御回路2は出力電圧検出端子14からの出力電圧Voutを入力とし、第1の分圧抵抗R1と第2の分圧抵抗R2により分圧された電圧をアンプ20の正入力端子に出力する。アンプ20は、第1の分圧抵抗R1と第2の分圧抵抗R2により分圧された電圧から基準電圧源4の出力する基準電圧を減算し、算出された電圧に応じた増幅信号を出力する。駆動回路1のpMOSトランジスタP1は、制御回路2から出力された増幅信号をゲート端子に入力し、ゲート端子に印加された電圧に応じてソース・ドレイン間に流れる電流量を制御する。pnp型トランジスタQ1は、pMOSトランジスタP1によって制御された電流により、直流電源3から出力端子5に出力される電圧を制御する。位相補償コンデンサC1は、出力電圧VoutとpMOSトランジスタP1のゲート端子に印加される電圧の位相を補償している。
【0015】
また、入力コンデンサC2は入力リプル電圧を低減し、出力コンデンサC3は出力リプル電圧を低減させているが、なくても構わない。
【0016】
上記のように動作する電源回路において、図2(b)で示すように、時刻T1において位相補償端子13からノイズが重畳されるとすると、図3で示した電源回路の駆動回路101の入力側(pnp型トランジスタQ102のベース端子)に印加されていた電圧波形が、図4(c)に示すような上側半分を半波整流された電圧波形であったのに対し、図1で示すpMOSトランジスタP1のゲート端子には、図2(c)で示すような半波整流されない電圧波形が印加される。すなわち、pMOSトランジスタP1に印加される電圧は降下することなく、図3で示す電源回路の出力電圧が図4(a)で示すようにノイズにより上昇していたのに対し、図1で示す電源回路によれば出力電圧Voutは、図2(a)に示すように、常に一定電圧を出力する。
【0017】
従って、本発明により、EMIノイズ等の高周波ノイズの影響により出力電圧Voutが変動することを抑制し、安定した電圧を出力する電源回路及び半導体集積回路100を得ることができる。
【0018】
【発明の効果】
本発明により、EMIノイズ等の高周波ノイズの影響により出力電圧が変動することを抑制し、安定した電圧を出力する電源回路及び半導体集積回路を得ることが可能となる。
【図面の簡単な説明】
【図1】本発明の実施の形態に係る電源回路及び半導体集積回路を説明した図である。
【図2】本発明の実施の形態に係る電源回路のノイズ印加時の動作タイミングチャートを説明した図である。
【図3】従来の電源回路を説明した図である。
【図4】従来の電源回路のノイズ印加時の動作タイミングチャートを説明した図である。
【符号の説明】
1,101 駆動回路
2,102 制御回路
3,103 直流電源
4 基準電圧源
5,105 出力端子
11 電源端子
12 駆動端子
13 位相補償端子
14 出力電圧検出端子
20 アンプ
C1,C101 位相補償コンデンサ
C2 入力コンデンサ
C3 出力コンデンサ
Q1,Q101,Q102 pnp型トランジスタ
D1〜D4 第1〜4のダイオード
P1 pMOSトランジスタ
R1 第1の分圧抵抗
R2 第2の分圧抵抗
R3 電流制限抵抗
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a power supply circuit, and more particularly to a semiconductor integrated circuit used for in-vehicle use.
[0002]
[Prior art]
As shown in FIG. 3, the conventional power supply circuit includes a DC power supply 103 having a cathode connected to a lower power supply VSS, a pnp transistor having an emitter terminal connected to the anode of the DC power supply 103, and a collector terminal connected to an output terminal 105. Q101, a control circuit 102 connected to the output terminal 105, a drive circuit connected to the output side of the control circuit 102, connected to the base terminal of the pnp transistor Q101 and the anode of the DC power supply 103, and the input of the drive circuit And a phase compensation capacitor C101 connected between the output terminals 105.
[0003]
The control circuit 102 receives an output voltage Vout from an output voltage detection terminal (not shown in the drawing) and outputs a control signal when the output voltage exceeds a reference voltage. The drive circuit 101 inputs a signal obtained by further compensating the phase of the control signal by the phase compensation capacitor C101, and drives the pnp transistor Q102.
[0004]
[Problems to be solved by the invention]
However, since the drive circuit 101 of the power supply circuit shown in FIG. 3 uses the pnp type transistor Q102 at the input stage, at the time T1 shown in FIG. When a voltage is applied due to high frequency noise such as EMI noise as shown, the voltage waveform on the input side of the drive circuit 101 (base terminal of the pnp transistor Q102 used in the input stage) is as shown in FIG. As a result, there is a problem that the output voltage Vout rises as shown in FIG. 4A.
[0005]
An object of the present invention is to provide a power supply circuit and a semiconductor integrated circuit that suppresses fluctuations in output voltage due to the influence of high-frequency noise such as EMI noise and outputs a stable voltage.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the first feature of the present invention is that a DC power supply having a cathode connected to a lower power supply, a phase compensation capacitor having one end connected to an output terminal, and an emitter terminal connected to the anode of the DC power supply A pnp transistor having a collector terminal connected to the output terminal, an input side connected to the output terminal, a DC power supply, a drive power supply from the DC power supply, and output of an amplified signal corresponding to a predetermined reference voltage A control circuit having an amplifier, a pMOS transistor having a drain terminal connected to the cathode terminal side of the diode and a lower power supply, a gate terminal connected to the output side of the amplifier and the other end of the phase compensation capacitor, and an anode of the DC power supply A current limiting resistor having one end connected thereto, a diode having an anode terminal connected to the other end of the current limiting resistor, and a source of the pMOS transistor Is a power supply circuit having an emitter terminal connected to the child, and a drive circuit having a npn type transistor having the other end connected to the base terminal of the current limiting resistor, a collector connected terminal to the base terminal of the pnp transistor This is the gist.
[0007]
In order to achieve the above object, the second feature of the present invention is that it has a power supply terminal, a drive terminal, a phase compensation terminal, and an output voltage detection terminal, the input side is connected to the output voltage detection terminal, and the power supply terminal is connected. A control circuit having an amplifier which is supplied with driving power from a power supply terminal and outputs an amplified signal corresponding to a predetermined reference voltage; a current limiting resistor having one end connected to the power supply terminal; and an anode terminal at the other end of the current limiting resistor A pMOS transistor having a diode connected to each other, a drain terminal connected to a cathode terminal side of the diode and a lower power supply, a gate terminal connected to an output side of the amplifier and a phase compensation terminal, and a source terminal of the pMOS transistor the emitter terminal, and the npn type transistor having a base terminal connected to the other end of the current limiting resistor, a collector terminal connected to the driving terminal And summarized in that a semiconductor integrated circuit and a drive circuit having.
[0008]
According to the above invention, it is possible to obtain a power supply circuit and a semiconductor integrated circuit that output a stable voltage while suppressing fluctuations in the output voltage due to the influence of high-frequency noise such as EMI noise.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals.
[0010]
As shown in FIG. 1, the power supply circuit according to the embodiment of the present invention includes a semiconductor integrated circuit 100 having a power supply terminal 11, a drive terminal 12, a phase compensation terminal 13, and an output voltage detection terminal 14. A DC power source 3 having a cathode connected to the lower power source VSS, a base terminal connected to the drive terminal 12, a collector terminal connected to the output terminal 5 and the output voltage detection terminal 14, a power source terminal 11 and a DC power source. A pnp transistor Q1 having an emitter terminal connected to the anode 3; a phase compensation capacitor C1 connected between the phase compensation terminal 13 and the output terminal 5; and a connection between the power supply terminal 11 and the lower power supply VSS. Input capacitor C2 and an output capacitor C3 connected between the output terminal 5 and the low power supply VSS.
[0011]
The semiconductor integrated circuit 100 includes a drive circuit 1 and a control circuit 2 connected to the input side of the drive circuit 1.
[0012]
Further, the driving circuit 1 includes a current limiting resistor R3 having one end connected to the power supply terminal 11, a first diode D1 having an anode terminal connected to the other end of the current limiting resistor R3, and a cathode terminal of the first diode D1. A second diode D2 connected to the anode terminal; a third diode D3 connected to the cathode terminal of the second diode D2; and an anode terminal connected to the cathode terminal of the third diode D3; Is connected to the lower power supply VSS, a base terminal connected to the other end of the current limiting resistor R3, a collector terminal connected to the drive terminal 12, an npn transistor Q2 having an emitter terminal, and an npn type Connected to the source terminal connected to the emitter terminal of the transistor Q2, the cathode terminal of the fourth diode D4, and the lower power supply VSS. A pMOS transistor P1 having a connected drain terminal and a gate terminal connected to the output side of the control circuit 2;
[0013]
The control circuit 2 includes a first dividing resistor R1 having one end connected to the output voltage detection terminal 14, a second dividing resistor R2 having one end connected to the low-level power supply VSS, the first dividing resistor R1, and the second dividing resistor. A positive input terminal is connected to the other end of the resistor R2, a negative input terminal is connected to the other end of the reference voltage source 4 having one end connected to the low-level power supply VSS, and the phase compensation terminal 13 and the input side of the drive circuit 1 (pMOS transistor) An amplifier 20 having an output side connected to the gate terminal of P1 is provided.
[0014]
The power supply circuit according to the embodiment of the present invention is configured as described above, and the control circuit 2 receives the output voltage Vout from the output voltage detection terminal 14 as input, and the first voltage dividing resistor R1 and the second voltage dividing resistor. The voltage divided by R2 is output to the positive input terminal of the amplifier 20. The amplifier 20 subtracts the reference voltage output from the reference voltage source 4 from the voltage divided by the first voltage dividing resistor R1 and the second voltage dividing resistor R2, and outputs an amplified signal corresponding to the calculated voltage. To do. The pMOS transistor P1 of the drive circuit 1 inputs the amplified signal output from the control circuit 2 to the gate terminal, and controls the amount of current flowing between the source and drain in accordance with the voltage applied to the gate terminal. The pnp type transistor Q1 controls the voltage output from the DC power supply 3 to the output terminal 5 by the current controlled by the pMOS transistor P1. The phase compensation capacitor C1 compensates the phase of the output voltage Vout and the voltage applied to the gate terminal of the pMOS transistor P1.
[0015]
Further, the input capacitor C2 reduces the input ripple voltage, and the output capacitor C3 reduces the output ripple voltage.
[0016]
In the power supply circuit operating as described above, if noise is superimposed from the phase compensation terminal 13 at time T1, as shown in FIG. 2B, the input side of the drive circuit 101 of the power supply circuit shown in FIG. The voltage waveform applied to (the base terminal of the pnp transistor Q102) was a voltage waveform obtained by half-wave rectifying the upper half as shown in FIG. 4C, whereas the pMOS transistor shown in FIG. A voltage waveform that is not half-wave rectified as shown in FIG. 2C is applied to the gate terminal of P1. That is, the voltage applied to the pMOS transistor P1 does not drop, and the output voltage of the power supply circuit shown in FIG. 3 rises due to noise as shown in FIG. 4A, whereas the power supply shown in FIG. According to the circuit, the output voltage Vout always outputs a constant voltage as shown in FIG.
[0017]
Therefore, according to the present invention, it is possible to obtain the power supply circuit and the semiconductor integrated circuit 100 that output the stable voltage while suppressing the fluctuation of the output voltage Vout due to the influence of high frequency noise such as EMI noise.
[0018]
【The invention's effect】
According to the present invention, it is possible to obtain a power supply circuit and a semiconductor integrated circuit that suppresses fluctuations in the output voltage due to the influence of high-frequency noise such as EMI noise and outputs a stable voltage.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a power supply circuit and a semiconductor integrated circuit according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating an operation timing chart when noise is applied to the power supply circuit according to the embodiment of the present invention.
FIG. 3 is a diagram illustrating a conventional power supply circuit.
FIG. 4 is a diagram illustrating an operation timing chart when noise is applied in a conventional power supply circuit.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1,101 Drive circuit 2,102 Control circuit 3,103 DC power supply 4 Reference voltage source 5,105 Output terminal 11 Power supply terminal 12 Drive terminal 13 Phase compensation terminal 14 Output voltage detection terminal 20 Amplifier C1, C101 Phase compensation capacitor C2 Input capacitor C3 Output capacitors Q1, Q101, Q102 pnp type transistors D1-D4 1st to 4th diodes P1 pMOS transistor R1 1st voltage dividing resistor R2 2nd voltage dividing resistor R3 Current limiting resistor

Claims (3)

陰極を低位電源に接続した直流電源と、
一端を出力端子に接続した位相補償コンデンサと、
前記直流電源の陽極に接続されたエミッタ端子、前記出力端子に接続されたコレクタ端子を有するpnp型トランジスタと、
前記出力端子に入力側が接続され、前記直流電源に接続され、該直流電源から駆動電源が供給され、所定の基準電圧に応じた増幅信号を出力するアンプを有する制御回路と、
前記直流電源の陽極に一端を接続した電流制限抵抗と、該電流制限抵抗の他端にアノード端子側を接続したダイオードと、前記ダイオードのカソード端子側及び前記低位電源に接続されたドレイン端子、前記アンプの出力側及び前記位相補償コンデンサの他端に接続したゲート端子を有するpMOSトランジスタと、前記pMOSトランジスタのソース端子に接続されたエミッタ端子、前記電流制限抵抗の他端に接続されたベース端子、前記pnp型トランジスタのベース端子に接続されたコレクタ端子を有するnpn型トランジスタとを有する駆動回路
とを備えることを特徴とする電源回路。
A DC power supply with the cathode connected to a lower power supply;
A phase compensation capacitor with one end connected to the output terminal;
A pnp-type transistor having an emitter terminal connected to the anode of the DC power supply, a collector terminal connected to the output terminal;
A control circuit having an amplifier connected to the output terminal, connected to the DC power supply, supplied with drive power from the DC power supply, and outputs an amplified signal corresponding to a predetermined reference voltage ;
A current limiting resistor having one end connected to the anode of the DC power source, a diode having an anode terminal connected to the other end of the current limiting resistor, a drain terminal connected to the cathode terminal side of the diode and the lower power source, A pMOS transistor having a gate terminal connected to the output side of the amplifier and the other end of the phase compensation capacitor; an emitter terminal connected to the source terminal of the pMOS transistor; a base terminal connected to the other end of the current limiting resistor; And a drive circuit having an npn-type transistor having a collector terminal connected to a base terminal of the pnp-type transistor .
電源端子、駆動端子、位相補償端子、出力電圧検出端子を有し、
前記出力電圧検出端子に入力側が接続され、前記電源端子に接続され、該電源端子から駆動電源が供給さ、所定の基準電圧に応じた増幅信号を出力するアンプを有する制御回路と、
前記電源端子に一端を接続した電流制限抵抗と、該電流制限抵抗の他端にアノード端子側を接続したダイオードと、前記ダイオードのカソード端子側及び前記低位電源に接続されたドレイン端子、前記アンプの出力側及び前記位相補償端子に接続したゲート端子を有するpMOSトランジスタと、前記pMOSトランジスタのソース端子に接続されたエミッタ端子、前記電流制限抵抗の他端に接続されたベース端子、前記駆動端子に接続されたコレクタ端子を有するnpn型トランジスタとを有する駆動回路
とを備えることを特徴とする半導体集積回路。
Has power supply terminal, drive terminal, phase compensation terminal, output voltage detection terminal,
A control circuit having an input connected to the output voltage detection terminal, connected to the power supply terminal, supplied with drive power from the power supply terminal, and having an amplifier that outputs an amplified signal corresponding to a predetermined reference voltage ;
A current limiting resistor having one end connected to the power supply terminal; a diode having an anode terminal connected to the other end of the current limiting resistor; a drain terminal connected to the cathode terminal side of the diode and the lower power supply ; A pMOS transistor having a gate terminal connected to the output side and the phase compensation terminal, an emitter terminal connected to the source terminal of the pMOS transistor, a base terminal connected to the other end of the current limiting resistor, and a connection to the drive terminal And a driving circuit having an npn transistor having a collector terminal .
前記ダイオードが複数個直列接続されていることを特徴とする請求項2記載の半導体集積回路。3. The semiconductor integrated circuit according to claim 2, wherein a plurality of said diodes are connected in series .
JP2002118610A 2002-04-19 2002-04-19 Power supply circuit and semiconductor integrated circuit Expired - Fee Related JP3990183B2 (en)

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