JP4008644B2 - Semiconductor manufacturing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus for forming a BST ((Ba, Sr) TiO ₃ ) film or the like.
[0002]
[Prior art]
Recently, research and development have been actively conducted on the formation of a BST film, which is a candidate for a capacitive insulating film of a next-generation DRAM.
[0003]
Since most of the raw materials for forming this BST film are solutions in which an organic metal liquid or an organic metal powder is dissolved in a solvent, in a semiconductor manufacturing apparatus for forming a BST film, the organic metal is removed by vaporizer or bubbling. The vaporized source gas is supplied to the semiconductor wafer. Further, a raw material mixed gas obtained by mixing a plurality of raw material gases is supplied to a semiconductor wafer, and in order to increase the frequency of collision of organic metals of the plurality of raw material gases, the raw material mixed gas is supplied to a shower head having a large number of through holes. The raw material mixed gas supplied to the upstream side and ejected from the through hole of the shower head is supplied to the semiconductor wafer. Furthermore, the raw material mixed gas and the oxygen-containing gas are supplied to the upstream side of the shower head through separate pipes. If there is a low temperature region in the flow path of the source gas, the source gas is liquefied, so the supply of the source gas becomes unstable, and the reproducibility of the film characteristics of the BST film cannot be ensured. In order to prevent this, the temperature of the flow path of the source gas is controlled.
[0004]
In this semiconductor manufacturing apparatus, since the shower head is used, the film thickness uniformity of the BST film can be improved.
[0005]
[Problems to be solved by the invention]
However, in such a semiconductor manufacturing apparatus, since the raw material mixed gas and the oxygen-containing gas are supplied to the upstream side of the shower head by separate pipes, the concentration distribution of the raw material mixed gas and the oxygen-containing gas on the semiconductor wafer Therefore, the film thickness and film composition of the BST film formed on the semiconductor wafer become non-uniform.
[0006]
Therefore, it is conceivable that the mixed gas of the raw material mixed gas and the oxygen-containing gas is supplied to the upstream side of the shower head after the raw material mixed gas and the oxygen-containing gas are merged into one pipe. Since the difference in the concentration distribution of the raw material mixed gas and the oxygen-containing gas on the wafer is small, a BST film having a uniform film thickness can be formed on the semiconductor wafer.
[0007]
However, when the raw material mixed gas and the oxygen-containing gas are mixed in the high pressure region in the pipe, a reaction product is generated, which causes generation of particles.
[0008]
The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor manufacturing apparatus capable of forming a film having a uniform film thickness and film composition and generating no particles. .
[0009]
[Means for Solving the Problems]
In order to achieve this object, in the present invention, a reaction chamber that performs a predetermined process on a substrate, a plurality of gas supply pipes that supply a plurality of types of gases to the reaction chamber, and a plurality of gas supply pipes are supplied. A semiconductor manufacturing apparatus comprising: a diffusion plate that diffuses and flows down a plurality of types of the gases in the horizontal direction; and a shower head that is provided downstream of the diffusion plate and supplies the gas in a shower form to the substrate The diffusion plate has a plurality of gas passages for separately flowing the respective gases in a horizontal plane so that the respective gases are not mixed, and the plurality of gas passages are provided adjacent to each other. And what is provided with the several jet hole connected to the said adjacent gas flow path is used.
[0010]
Also, a reaction chamber for forming a BST film on the substrate, a mixed material gas supply pipe for supplying a mixed material gas obtained by vaporizing Ba material, Sr material and Ti material to the reaction chamber, and an oxygen-containing gas in the reaction chamber. An oxygen-containing gas supply pipe to be supplied, a diffusion plate for diffusing and flowing the mixed raw material gas and the oxygen-containing gas in the horizontal direction, respectively, provided downstream of the diffusion plate, and in a shower shape with respect to the substrate In a semiconductor manufacturing apparatus having a shower head for supplying the mixed raw material gas and the oxygen-containing gas, a mixed raw material gas channel for circulating the mixed raw material gas in a horizontal plane as the diffusion plate, and the oxygen-containing gas An oxygen-containing gas channel that circulates in a horizontal plane, the mixed source gas channel and the oxygen-containing gas channel are provided adjacent to each other, and the mixed source gas channel is provided. Used a plurality of ejection holes communicating with the passage and the oxygen-containing gas flow path is provided.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
1 is a schematic cross-sectional view showing a semiconductor manufacturing apparatus according to the present invention, FIG. 2 is a view showing a diffusion plate of the semiconductor manufacturing apparatus shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along line AA in FIG. As shown in the figure, an exhaust pipe 2 is connected to a reaction chamber (chamber) 1, and the exhaust pipe 2 is connected to a vacuum exhaust device (not shown). In addition, a heater 3 is provided in the reaction chamber 1, an elevating means 4 for elevating and lowering the heater 3 is provided, a push-up pin 5 is provided on the heater 3 so as to be lifted and lowered, and a semiconductor wafer 6 is placed on the push-up pin 5. The Further, a wafer introduction port 7 is provided in the reaction chamber 1, a gate valve 8 is provided in the wafer introduction port 7, a shower head 11 is provided in the upper part of the reaction chamber 1, and an intermediate diffusion plate 10 is provided on the shower head 11. The diffusion plate 9 is provided on the intermediate diffusion plate 10, and the diffusion plate 9, the intermediate diffusion plate 10, and the shower head 11 constitute gas supply means. Also, a heater 12 is provided so as to cover the gas supply means, and a mixed raw material gas supply pipe 13 that supplies the mixed raw material gas that vaporizes Ba raw material, Sr raw material, and Ti raw material to the reaction chamber 1 through the heater 12; An oxygen-containing gas supply pipe 14 for supplying the oxygen-containing gas to the reaction chamber 1 is provided. The diffusion plate 9 is provided with a spiral mixed raw material gas flow path 15 for flowing the mixed raw material gas in the horizontal plane and a spiral oxygen-containing gas flow path 16 for flowing the oxygen-containing gas in the horizontal plane. The raw material gas supply pipe 13 communicates with the mixed raw material gas flow path 15, the oxygen-containing gas supply pipe 14 communicates with the oxygen-containing gas flow path 16, and the mixed raw material gas flow path 15 and the oxygen-containing gas flow path 16. Are provided adjacent to each other, and a plurality of ejection holes 17 communicating with the mixed raw material gas flow path 15 and the oxygen-containing gas flow path 16 are provided. Further, the intermediate diffusion plate 10 is provided with a plurality of through holes at positions not corresponding to the ejection holes 17. The shower head 11 is provided with a large number of through holes having a large ratio between the lengthwise dimension and the radial dimension. The diffusion plate 9 diffuses the mixed raw material gas and the oxygen-containing gas in the horizontal direction and flows down, and the intermediate diffusion plate 10 further diffuses the mixed raw material gas and the oxygen-containing gas diffused by the diffusion plate 9. The shower head 11 supplies the mixed raw material gas and the oxygen-containing gas in a shower form to the semiconductor wafer 6, and the reaction chamber 1 forms a BST film on the semiconductor wafer 6.
[0012]
In this semiconductor manufacturing apparatus, first, the gate valve 8 is opened, and the semiconductor wafer 6 is pushed up and placed on the pins 5 through the gate valve 8 by a transfer robot (not shown). Next, the gate valve 8 is closed, the inside of the reaction chamber 1 is evacuated by the vacuum evacuation device, and the heater 3 and the semiconductor wafer 6 are raised to the position indicated by the two-dot chain line in FIG. Next, mixed raw material gas obtained by vaporizing Ba raw material, Sr raw material, and Ti raw material through mixed raw material gas supply pipe 13 is supplied to mixed raw material gas flow path 15 of diffusion plate 9, and oxygen containing gas is supplied through oxygen containing gas supply pipe 14. When supplied to the oxygen-containing gas flow path 16 of the diffusion plate 9, the mixed raw material gas and the oxygen-containing gas are diffused in the horizontal direction in the mixed raw material gas flow path 15 and the oxygen-containing gas flow path 16, respectively, and flow down. 17, the BST film is formed on the semiconductor wafer 6 by being supplied onto the semiconductor wafer 6 in the reaction chamber 1 through the through hole of the intermediate diffusion plate 10 and the through hole of the shower head 11.
[0013]
In such a semiconductor manufacturing apparatus, since the raw material mixed gas and the oxygen-containing gas can be supplied to the upstream side of the shower head 11 from the plurality of ejection holes 17, the raw material mixed gas and the oxygen-containing gas are provided on the semiconductor wafer 6. Therefore, it is possible to form a BST film having a uniform film thickness and film composition on the semiconductor wafer 6. Moreover, since the mixed raw material gas and the oxygen-containing gas flow separately in the horizontal direction by the mixed raw material gas flow path 15 and the oxygen-containing gas flow path 16, the mixed raw material gas and the oxygen-containing gas are mixed in the diffusion plate 9. Therefore, in the diffusion plate 9, the raw material mixed gas and the oxygen-containing gas do not react with each other, and no reaction product is generated, so that no particles are generated.
[0014]
4 is a view showing a diffusion plate of another semiconductor manufacturing apparatus according to the present invention, and FIG. 5 is a cross-sectional view taken along line BB of FIG. As shown in the figure, an arc-shaped mixed source gas channel 21 for flowing the mixed source gas in a horizontal plane through a diffusion plate provided upstream of the shower head, and an arc-shaped oxygen for flowing an oxygen-containing gas in the horizontal plane. A mixed raw material gas supply pipe is in communication with the mixed raw material gas flow path 21, and the oxygen containing gas supply pipe is in communication with the oxygen containing gas flow path 22. The channel 21 and the oxygen-containing gas channel 22 are provided adjacent to each other, and a plurality of ejection holes 23 communicating with the mixed raw material gas channel 21 and the oxygen-containing gas channel 22 are provided. The intermediate diffusion plate provided at the lower portion of the diffusion plate is provided with a plurality of through holes at positions not corresponding to the ejection holes 23.
[0015]
In this semiconductor manufacturing apparatus, a mixed raw material gas obtained by vaporizing Ba raw material, Sr raw material and Ti raw material is supplied to the mixed raw material gas flow channel 21 of the diffusion plate by the mixed raw material gas supply pipe, and the oxygen containing gas is supplied by the oxygen containing gas supply pipe. Is supplied to the oxygen-containing gas flow path 22 of the diffusion plate, the mixed raw material gas and the oxygen-containing gas are diffused in the mixed raw material gas flow path 21 and the oxygen-containing gas flow path 22 in the horizontal direction and flow down, respectively. 23, the BST film is formed on the semiconductor wafer by being supplied onto the semiconductor wafer in the reaction chamber through the through hole of the intermediate diffusion plate and the through hole of the shower head.
[0016]
In such a semiconductor manufacturing apparatus, since the raw material mixed gas and the oxygen-containing gas can be supplied to the upstream side of the shower head from the plurality of ejection holes 23, the concentration of the raw material mixed gas and the oxygen-containing gas on the semiconductor wafer. Since there is no difference in distribution, a BST film having a uniform film thickness and film composition can be formed on a semiconductor wafer. In addition, since the mixed source gas and the oxygen-containing gas are separately caused to flow horizontally in the mixed source gas channel 21 and the oxygen-containing gas channel 22, the mixed source gas and the oxygen-containing gas may be mixed in the diffusion plate. Therefore, in the diffusion plate, the raw material mixed gas and the oxygen-containing gas do not react with each other, and no reactant is generated, so that no particles are generated.
[0017]
In the above-described embodiment, when the BST film is formed on the semiconductor wafer 6 that is the substrate, that is, a plurality of types of gases are a mixed source gas obtained by vaporizing Ba source, Sr source, and Ti source, and an oxygen-containing gas. In the above description, the plurality of gas supply pipes are the mixed raw material gas supply pipe 13 and the oxygen-containing gas supply pipe 14, and the plurality of gas flow paths are the mixed raw material gas flow path 21 and the oxygen-containing gas flow path 22. The present invention is also applied to a case where an Sr raw material, a Bi raw material, a Ta raw material, a Pb raw material, a Zr raw material, a Ru raw material, a Pt raw material, or an Ir raw material that is a liquid raw material and a solid raw material of a MOCVD new material film are supplied onto a substrate be able to. Further, in the above-described embodiment, the ejection holes 17 and 23 are not necessarily provided point-symmetrically around the center point of the diffusion plate 9, but the ejection holes are point-symmetrical about the center point of the diffusion plate 9. It is desirable to provide.
[0018]
【The invention's effect】
In the semiconductor manufacturing apparatus according to the present invention, a plurality of types of gas can be supplied to the upstream side of the shower head from a plurality of ejection holes, so that there is no difference in the concentration distribution of the plurality of types of gas on the substrate. Therefore, a film having a uniform film thickness and film composition can be formed on the substrate, and a plurality of types of gases are separately caused to flow horizontally in a plurality of gas flow paths. Since there is no reaction and no reactant is produced, no particles are generated.
[0019]
Further, in the semiconductor manufacturing apparatus according to the present invention, since the raw material mixed gas and the oxygen-containing gas can be supplied to the upstream side of the shower head from the plurality of ejection holes, the raw material mixed gas and the oxygen-containing gas are supplied on the substrate. Since there is no difference in the concentration distribution, a BST film having a uniform film thickness and film composition can be formed on the substrate, and the mixed raw material gas and the oxygen-containing gas passage are mixed with the mixed raw material gas passage and the oxygen-containing gas passage. Since the gas is allowed to flow separately in the horizontal direction, the raw material mixed gas and the oxygen-containing gas do not react with each other in the diffusion plate, and no reactant is generated, so that no particles are generated.
[Brief description of the drawings]
FIG. 1 is a schematic sectional view showing a semiconductor manufacturing apparatus according to the present invention.
2 is a view showing a diffusion plate of the semiconductor manufacturing apparatus shown in FIG. 1;
3 is a cross-sectional view taken along the line AA in FIG.
FIG. 4 is a view showing a diffusion plate of another semiconductor manufacturing apparatus according to the present invention.
5 is a cross-sectional view taken along the line BB in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Reaction furnace 6 ... Semiconductor wafer 9 ... Diffusion plate 11 ... Shower head 13 ... Mixed raw material gas supply piping 14 ... Oxygen containing gas supply piping 15 ... Mixed raw material gas flow path 16 ... Oxygen containing gas flow path 17 ... Ejection hole 21 ... Mixed raw material gas flow path 22 ... oxygen-containing gas flow path 23 ... ejection hole

Claims (2)

A reaction chamber for performing predetermined processing on the substrate;
A plurality of gas supply pipes for supplying a plurality of types of gases to the reaction chamber;
A diffusion plate that diffuses and flows down a plurality of types of the gases supplied from the plurality of gas supply pipes in the horizontal direction;
In a semiconductor manufacturing apparatus having a shower head provided downstream of the diffusion plate and supplying the gas in a shower form to the substrate,
As the diffusion plate, it has a plurality of gas flow paths for separately flowing the respective gases in a horizontal plane so that the respective gases are not mixed, and the plurality of gas flow paths are provided adjacent to each other, and A semiconductor manufacturing apparatus using a device provided with a plurality of ejection holes communicating with the adjacent gas flow paths. A reaction chamber for forming a BST film on the substrate;
A mixed raw material gas supply pipe for supplying a mixed raw material gas obtained by vaporizing Ba raw material, Sr raw material and Ti raw material to the reaction chamber;
An oxygen-containing gas supply pipe for supplying an oxygen-containing gas to the reaction chamber;
A diffusion plate that diffuses the mixed raw material gas and the oxygen-containing gas in a horizontal direction to flow down;
In a semiconductor manufacturing apparatus having a shower head provided downstream of the diffusion plate and supplying the mixed raw material gas and the oxygen-containing gas in a shower form to the substrate,
The diffusion plate has a mixed raw material gas flow path for flowing the mixed raw material gas in a horizontal plane and an oxygen-containing gas flow path for flowing the oxygen-containing gas in a horizontal plane, and the mixed raw material gas flow path and the above The oxygen-containing gas flow path is provided adjacent to each other and is provided with a plurality of ejection holes communicating with the mixed raw material gas flow path and the oxygen-containing gas flow path. Semiconductor manufacturing equipment.

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