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JP4014888B2 - Semiconductor acceleration sensor and manufacturing method thereof - Google Patents
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JP4014888B2 - Semiconductor acceleration sensor and manufacturing method thereof - Google Patents

Semiconductor acceleration sensor and manufacturing method thereof Download PDF

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Publication number
JP4014888B2
JP4014888B2 JP2002040704A JP2002040704A JP4014888B2 JP 4014888 B2 JP4014888 B2 JP 4014888B2 JP 2002040704 A JP2002040704 A JP 2002040704A JP 2002040704 A JP2002040704 A JP 2002040704A JP 4014888 B2 JP4014888 B2 JP 4014888B2
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gap
surface portion
acceleration sensor
axis direction
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JP2003240796A (en
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努 澤井
佳幸 中溝
正人 安藤
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Hokuriku Electric Industry Co Ltd
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Hokuriku Electric Industry Co Ltd
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Priority to PCT/JP2003/001581 priority patent/WO2003069354A1/en
Priority to AU2003212003A priority patent/AU2003212003A1/en
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Description

【0001】
【発明の属する技術分野】
本発明は、外部から加えられた力による加速度または傾斜させることにより静止状態で加わる重力加速度を測定できる半導体加速度センサ及びその製造方法に関するものである。
【0002】
【従来の技術】
重錘固定部と筒状の支持部との間に可撓部を残すように半導体結晶基板にエッチングが施されて形成された加速度センサ本体と、重錘固定部に固定された重錘と、重錘の周囲を囲むように配置されて支持部を支持する筒状の台座とを具備する半導体加速度センサが知られている。この種の半導体加速度センサは、外部から加えられた力による加速度または傾斜させることにより静止状態で加わる重力加速度に基づく力により重錘が動いて可撓部が歪むことにより、可撓部に形成されたセンサ素子が歪み量に応じた加速度を検出する。しかしながら、このような半導体加速度センサは、加速度センサ本体の可撓部の厚み寸法が小さいため、半導体加速度センサに加わる力の量によっては、可撓部が損傷するおそれがある。そこで、重錘が必要以上に大きく変位しないように、重錘と台座との間に形成された間隙を数μmに設定して重錘と台座とが当接しやすくすることが提案された。また、半導体加速度センサ全体をシリコンオイルからなる緩衝材が充填された密閉容器内に配置して、可撓部に加わる力を緩衝することが提案された。
【0003】
【発明が解決しようとする課題】
しかしながら、重錘と台座との間に形成された間隙を数μmという極めて小さい寸法に形成するのは、技術的に難しく、量産に適さない。また、半導体加速度センサ全体をシリコンオイルからなる緩衝材が充填された密閉容器内に配置すると、センサ素子がシリコンオイルによって温度変化の影響を受けやすくなり、センサ素子の精度が低下するという問題があった。
【0004】
本発明の目的は、センサ素子の精度が低下したり、製造を困難にすることなく、可撓部の損傷を防ぐことができる半導体加速度センサ及びその製造方法を提供することにある。
【0005】
【課題を解決するための手段】
本発明が改良の対象とする半導体加速度センサは、中心部に重錘固定部、外周部に筒状の支持部、そして重錘固定部と支持部との間に可撓部を残すように半導体結晶基板にエッチングが施されて形成され且つ可撓部にセンサ素子が形成された加速度センサ本体と重錘と台座とを具備している。重錘は、一端が重錘固定部に固定され且つ他端が支持部によって囲まれた空間の外部に位置するような形状寸法を有している。台座は、支持部を支持し且つ重錘に作用する加速度に基づく力により重錘が動くのを許容するようにして加速度センサ本体から突出する重錘の周囲を囲む筒状を有している。そして、重錘と台座との間に形成された間隙内に、重錘の動きを著しく拘束せず且つ重錘の動きにより加速度センサ本体の可撓部が損傷を受けるのを阻止する緩衝材が配置されている。本発明の半導体加速度センサでは、重錘と台座との間に形成された間隙内にのみ位置し且つ支持部によって囲まれた空間を密閉しないように緩衝材を間隙内に配置する。本発明の半導体加速度センサでは、加速度に基づく力により重錘が大きく動こうとすると、重錘と台座との間の間隙内に配置された緩衝材により重錘の動きが抑制されるため、重錘が必要以上に動くことがなく、可撓部の損傷を防ぐことができる。そのため、本発明によれば、従来のように、重錘と台座との間に形成された間隙を小さい寸法に形成する必要はなく、製造を容易に行うことができる。また、緩衝材は、重錘と台座との間に形成された間隙内にのみ位置しているため、従来のように、緩衝材によりセンサ素子が温度変化の影響を受けることがなく、センサ素子の精度が低下するのを防ぐことができる。なお、緩衝材は、支持部によって囲まれた空間を密閉しないように配置されているので、緩衝材の配置により可撓部の動きが損なわれることがない。
【0006】
緩衝材は、重錘の動きにより生ずる可撓部の歪みが重錘に加わる加速度の方向によって不平衡にならないような位置に配置されている複数の部分緩衝部から構成するのが好ましい。
【0007】
台座は、重錘に加速度に基づく力が加わっていない状態において、重錘固定部及び重錘の中心をそれぞれ通って重錘固定部及び重錘が並ぶ方向に延びる方向をZ軸方向とし、該Z軸方向と直交する二つの方向をX軸方向及びY軸方向とする三軸方向を仮定したときに、重錘に作用する加速度に基づく力により重錘が三軸方向に変位するのを許容するように支持部を支持することができる。この場合、複数の部分緩衝部は、重錘と台座との間に形成された間隙内のX軸方向に延びる仮想X軸線及びY軸方向に延びる仮想Y軸線に対応する部分に配置するのが好ましい。このようにすれば、X軸方向及びY軸方向に加わる加速度を正確に測定できる上、緩衝材の数及び量を少なくすることができる。
【0008】
このような、緩衝材は、例えば、ゲル状物質から形成することができる。この場合、重錘及び台座は、重錘と台座との間に形成された間隙内における複数の部分緩衝部が配置される複数の間隙部分(以下、緩衝部配置部分と言う)の幅寸法が他の間隙部分の幅寸法よりも小さくなる形状に形成するのが好ましい。ゲル状物質を間隙寸法が均等でない間隙部に配置した場合、ゲル状物質は寸法が大きい間隙部分から小さい間隙部分に移動しやすいので、緩衝部配置部分の寸法を他の間隙部分の幅寸法よりも小さくすれば、ゲル状物質からの緩衝材は、緩衝部配置部分内に容易に配置することができる。
【0009】
この場合、緩衝部配置部分の幅寸法は、0.01mm〜0.1mmとし、ゲル状物質は、ウレタンゲルまたはシリコンゲルとするのが好ましい。緩衝部配置部分の幅寸法が0.01mmを下回ると、緩衝部配置部分の形成が難しくなる。また、緩衝部配置部分の間隙の幅寸法が0.1mmを上回ると、緩衝材(シリコンゲル)が緩衝部配置部分内から脱落するおそれがある。
【0010】
加速度に基づく力が加速度センサ本体に対して重錘が位置する側とは反対側に向かって働くと、重錘が移動する際の移動量は特に大きくなる。そこで、重錘の三軸方向への変位量を所定の範囲内に規制するストッパ構造を更に備えるのが好ましい。例えば、重錘は、可撓部に対向する上面部と、仮想Z軸線に平行に延びる側面部と、上面部と側面部とに亘る傾斜面部とを有し、台座は、側面部と対向する対向内面部と、傾斜面部と対向する対向傾斜面部を有するように構成することができる。この場合、緩衝材は、側面部と対向内面部との間の間隙部に配置し、傾斜面部によりストッパ構造の一部を構成する第1のストッパ面を形成し、対向傾斜面部によりストッパ構造の一部を構成し且つ第1のストッパ面と対向して規制時に第1のストッパ面と接触する第2のストッパ面を形成する。そして、第1及び第2のストッパ面は、それぞれ周方向に連続してまたは間隔をあけて形成され且つ加速度センサ本体が位置する側に向かうに従ってZ軸方向に延びる仮想Z軸線に近づくように傾斜する傾斜面として形成する。このようにすれば、緩衝材の抑制に加えて重錘及び台座の相互の当接によって重錘の移動が規制されて、可撓部の損傷をより確実に防ぐことができる。
【0011】
本発明の半導体加速度センサの緩衝材は、間隙内にのみ位置し且つ空間を密閉しないように重錘と台座とに亘って液状シリコンを塗布により配置し、この液状シリコンを加熱して硬化させてシリコンをゲル化して形成すればよい。このようにすれば、緩衝材を半導体加速度センサ内に簡単に配置できる。
【0012】
【発明の実施の形態】
以下、図面を参照して本発明の実施の形態を詳細に説明する。図1は、本発明の実施の形態の半導体加速度センサの断面図であり、図2は、図1のII−II線断面図である。両図に示すように、本実施の形態の半導体加速度センサは、加速度センサ本体1と重錘3と台座5とを有している。加速度センサ本体1は、中心部に重錘固定部7、外周部に筒状の支持部9、そして重錘固定部7と支持部9との間に可撓部11を残すように半導体結晶基板にエッチングが施されて形成されている。可撓部11の重錘固定部7及び支持部9が位置する側と反対の面(表面)には、図示しないセンサ素子が形成されている。このセンサ素子は、重錘3に加速度に基づく力が加わっていない状態において、重錘固定部7及び重錘3の中心Cをそれぞれ通って重錘固定部7及び重錘3が並ぶ方向に延びる方向をZ軸方向とし、該Z軸方向と直交する二つの方向をX軸方向及びY軸方向とする三軸方向を仮定したときに、X軸方向に延びる仮想X軸線XL、Y軸方向に延びる仮想Y軸線YL及びZ軸方向に延びる仮想Z軸線ZLの方向の加速度をそれぞれ検出するX軸方向加速度検出用拡散抵抗、Y軸方向加速度検出用拡散抵抗及びZ軸方向加速度検出用拡散抵抗とから構成されている。本実施の形態の半導体加速度センサは、外部から加えられた力による加速度、または傾斜させた静止状態で加わる重力加速度に基づく力により重錘3が動いて可撓部11が歪むことにより、センサ素子を構成する各拡散抵抗の抵抗値が変化して歪み量に応じた加速度を検出する。
【0013】
重錘3は、図3(A)及び(B)に示すように、タングステンにより形成されており、一端が重錘固定部7に固定され且つ他端が支持部9によって囲まれた空間の外部に位置している。この重錘3は、円柱形の本体部3aと本体部3aの側面から台座5に向かって仮想X軸線XL及び仮想Y軸線YLが延びる方向に突出する4つの突出部3b…とにより一体に成形されている。本体部3aは、可撓部11に対向する円形の上面部3cを有しており、上面部3cの中心に重錘固定部7が固定されている。突出部3bは、仮想X軸線XLまたは仮想Y軸線YL近傍で台座5側に突出する横断面が円弧状の対向湾曲面3dと、対向湾曲面3dの両側に位置して台座5側からくぼむ横断面が円弧状の2つの側方湾曲面3e,3eと、対向湾曲面3d及び側方湾曲面3eと上面部3cとの間に亘って形成された傾斜面部3fとを有している。対向湾曲面3dは、4つの対向湾曲面3d…が上面部3cと同心の同一の仮想円上に位置するように形成されている。側方湾曲面3eは、隣接する突出部3bの側方湾曲面3eと共に1つの円弧を形成するように湾曲している。本実施の形態では、対向湾曲面3dと側方湾曲面3eとにより仮想Z軸線ZLに平行に延びる側面部3gが形成されている。傾斜面部3fは、加速度センサ本体1が位置する側に向かうに従って仮想Z軸線ZLに近づくように傾斜している。
【0014】
台座5は、図1及び図2に示すように、ガラスにより形成されており、横断面の外周部側の輪郭が正方形で、内周部側の輪郭が円形の筒状の形状を有している。この台座5は、重錘3に作用する加速度に基づく力により重錘3がX軸、Y軸及びZ軸の三軸方向に変位するのを許容するように支持部9を支持し且つ重錘3に作用する加速度に基づく力により重錘3が動くのを許容するように重錘3の周囲を囲んで配置されている。これにより重錘3と台座5との間には、間隙13が形成されることになる。台座5の内周部は、重錘3の側面部3gと対向する対向内面部5aと、重錘3の傾斜面部3fに沿って対向して規制時に傾斜面部3fと接触する対向傾斜面部5bとを有している。対向傾斜面部5bも傾斜面部3fと同様に、加速度センサ本体1が位置する側に向かうに従って仮想Z軸線ZLに近づくように傾斜しており、切頭円錐面形状を有している。重錘3に加速度が加わっていない状態において、対向傾斜面部5bと傾斜面部3fとの間の間隙は、周方向にほぼ等しく形成されている。本実施の形態では、傾斜面部3fまたは対向傾斜面部5bが延長する仮想面と仮想Z軸線ZLとが交差する鋭角角度θは30°〜60°が好ましい。本実施の形態では、傾斜面部3f及び対向傾斜面部5bにより、第1のストッパ面及び第2のストッパ面が構成されており、これら第1のストッパ面及び第2のストッパ面により重錘3の三軸方向への変位量を所定の範囲内に規制するストッパ構造が構成されている。
【0015】
前述したように、重錘3の対向湾曲面3dは、仮想X軸線XLまたは仮想Y軸線YL近傍で台座5側に突出しているので、仮想X軸線XL及び仮想Y軸線YLに対応する位置の近傍における台座5の対向内面部5aと重錘3の対向湾曲面3dとの間隙部分13aの幅寸法L1は、他の部分の間隙部分の幅寸法よりも小さくなっている。本実施の形態では、間隙部分13aの幅寸法L1は0.01mm〜0.1mmである。間隙部分13a内には、重錘3の周方向に等しい間隔をあけて4つの部分緩衝部15A〜15Dからなる緩衝材15が配置されている。言い換えるならば、間隙13内における4つの部分緩衝部15A〜15Dが配置される4つの間隙部分(緩衝部配置部分)13aの幅寸法L1が他の間隙部分の幅寸法よりも小さくなる形状に形成されている。4つの部分緩衝部15A〜15Dは、シリコンゲルからなるゲル状物質により形成されており、重錘3の動きを著しく拘束せず且つ重錘3の動きにより加速度センサ本体1の可撓部11が損傷を受けるのを阻止する程度の弾性及び柔軟性を有している。これら部分緩衝部15A〜15Dは、間隙部分13a内にのみ位置し且つ支持部9によって囲まれた空間を密閉しないように、重錘3と台座5の両方にそれぞれ接合して配置されている。本実施の形態では、信越シリコン株式会社からシリコーンゲルKE1055の商品名で販売されている液状シリコーンを間隙部分13a内の所定位置に塗布等により配置し、この液状シリコンを150℃で1時間加熱して液状シリコンを硬化させてシリコンゲルからなる緩衝材15を形成した。
【0016】
本実施の形態の半導体加速度センサでは、加速度に基づく力により重錘3が大きく動こうとすると、緩衝材15により重錘3の動きが抑制されるため、重錘3が必要以上に動くことがなく、可撓部11の損傷を防ぐことができる。そのため、従来のように、重錘3と台座5との間に形成された間隙13を小さい寸法に形成する必要はなく、半導体加速度センサの製造を容易に行うことができる。また、緩衝材15は、間隙13内にのみ位置しているため、従来のように、緩衝材15によりセンサ素子が温度変化の影響を受けることがなく、センサ素子の精度が低下するのを防ぐことができる。
【0017】
図4は、本発明の他の実施の形態の半導体加速度センサの断面図である。本実施の形態の半導体加速度センサは、台座25の形状を除いて図1に示す半導体加速度センサと同じ構造を有しているので、図1に示す半導体加速度センサと同じ部材には、該部材の符号に20を加えた符号を付してその説明を省略する。本実施の形態では、台座25は、横断面の外周部側の輪郭が正方形で、内周部側の輪郭が八角形の筒状の形状を有している。台座25の対向内面部25aは、仮想X軸線XLまたは仮想Y軸線YLと直交して交差して重錘23の4つの対向湾曲面23d…に対向する4つの軸上対向面25c…と、仮想X軸線XLまたは仮想Y軸線YLと交差せずに重錘23の4つの側方湾曲面23e…に対向する4つの非軸上対向面25d…とを有している。台座25の重錘23の傾斜面部(図1の符号3fに相当する部分)に対向する対向傾斜面部(図1の符号5bに相当に相当する部分)は、切頭八角錐面形状を有している。
【0018】
前述したように、軸上対向面25cは仮想X軸線XLまたは仮想Y軸線YLと直交し、重錘23の対向湾曲面23dは、仮想X軸線XLまたは仮想Y軸線YL近傍で台座25側に突出しているので、仮想X軸線XLまたは仮想Y軸線YL近傍に近づくにつれて重錘23と台座25との間隙33の幅寸法は小さくなる。言い換えるならば、間隙33内における4つの部分緩衝部35A〜35Dが配置される4つの間隙部分(緩衝部配置部分)33aの幅寸法が仮想X軸線XLまたは仮想Y軸線YL近傍に近づくにつれて他の間隙部分の幅寸法よりも小さくなる形状に重錘23及び台座25は形成されており、最小部分の幅寸法L2は0.01mm〜0.1mmである。本実施の形態の半導体加速度センサでは、液状シリコーンを間隙33内に塗布等により配置する際に、より仮想X軸線XLまたは仮想Y軸線YLの近傍に液状シリコンを配置できる。
【0019】
なお、重錘、台座は、上記例の形状に限られるものではなく、種々の形状のものを採用できる。例えば、台座の内周部側の仮想X軸線XLまたは仮想Y軸線YL近傍部分が重錘側に突出する形状に台座を形成することができる。
【0020】
また、上記例では、傾斜面部3fと対向傾斜面部5bとからなるストッパ構造を設けたが、ストッパ構造を設け無くてもよいのは勿論である。
【0021】
【発明の効果】
本発明によれば、可撓部の損傷を防ぐことができる半導体加速度センサをセンサ素子の精度を低下させることなく容易に得ることができる。
【図面の簡単な説明】
【図1】 本発明の実施の形態の半導体加速度センサの断面図である。
【図2】 図1のII−II線断面図である。
【図3】 (A)及び(B)は図1に示す半導体加速度センサの重錘の側面図及び平面図である。
【図4】 本発明の他の実施の形態の半導体加速度センサの断面図である。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor acceleration sensor capable of measuring acceleration caused by an external force applied or gravitational acceleration applied in a stationary state by tilting, and a method of manufacturing the same.
[0002]
[Prior art]
An acceleration sensor body formed by etching the semiconductor crystal substrate so as to leave a flexible portion between the weight fixing portion and the cylindrical support portion; a weight fixed to the weight fixing portion; 2. Description of the Related Art A semiconductor acceleration sensor is known that includes a cylindrical pedestal that is disposed so as to surround a weight and supports a support portion. This type of semiconductor acceleration sensor is formed in a flexible part by moving a weight due to a force based on gravitational acceleration applied in a stationary state by accelerating or tilting by an externally applied force and distorting the flexible part. The sensor element detects acceleration corresponding to the amount of strain. However, in such a semiconductor acceleration sensor, since the thickness dimension of the flexible portion of the acceleration sensor main body is small, the flexible portion may be damaged depending on the amount of force applied to the semiconductor acceleration sensor. Therefore, it has been proposed that the gap formed between the weight and the pedestal is set to several μm so that the weight and the pedestal easily come into contact so that the weight is not displaced more than necessary. Further, it has been proposed that the entire semiconductor acceleration sensor is placed in a sealed container filled with a cushioning material made of silicon oil to buffer the force applied to the flexible portion.
[0003]
[Problems to be solved by the invention]
However, it is technically difficult to form the gap formed between the weight and the pedestal so as to have a very small dimension of several μm, which is not suitable for mass production. In addition, if the entire semiconductor acceleration sensor is placed in a sealed container filled with a cushioning material made of silicone oil, the sensor element is easily affected by temperature changes due to silicone oil, and the accuracy of the sensor element is reduced. It was.
[0004]
An object of the present invention is to provide a semiconductor acceleration sensor and a method for manufacturing the same that can prevent damage to a flexible portion without lowering the accuracy of a sensor element or making it difficult to manufacture the sensor element.
[0005]
[Means for Solving the Problems]
The semiconductor acceleration sensor to be improved by the present invention is a semiconductor acceleration sensor in which a weight fixing part is provided at the center, a cylindrical support part is provided at the outer peripheral part, and a flexible part is left between the weight fixing part and the support part. An acceleration sensor main body, a weight, and a pedestal, which are formed by etching a crystal substrate and have a sensor element formed in a flexible portion, are provided. The weight has a shape such that one end is fixed to the weight fixing portion and the other end is located outside the space surrounded by the support portion. The pedestal has a cylindrical shape surrounding the periphery of the weight protruding from the acceleration sensor main body so as to allow the weight to move by a force based on the acceleration acting on the weight while supporting the support portion. In addition, in the gap formed between the weight and the pedestal, a cushioning material that does not significantly restrain the movement of the weight and prevents the flexible portion of the acceleration sensor body from being damaged by the movement of the weight. Has been placed. In the semiconductor acceleration sensor of the present invention, the cushioning material is disposed in the gap so as not to seal the space surrounded only by the gap formed between the weight and the pedestal and surrounded by the support portion. In the semiconductor acceleration sensor of the present invention, when the weight tries to move largely due to the force based on the acceleration, the movement of the weight is suppressed by the buffer material disposed in the gap between the weight and the pedestal. The weight does not move more than necessary, and damage to the flexible part can be prevented. Therefore, according to the present invention, it is not necessary to form the gap formed between the weight and the pedestal in a small size as in the prior art, and manufacturing can be easily performed. Further, since the cushioning material is located only in the gap formed between the weight and the pedestal, the sensor element is not affected by the temperature change by the cushioning material as in the prior art. It is possible to prevent a decrease in accuracy. In addition, since the buffer material is arrange | positioned so that the space enclosed by the support part may not be sealed, the motion of a flexible part is not impaired by arrangement | positioning of a buffer material.
[0006]
The cushioning material is preferably composed of a plurality of partial cushioning portions arranged at positions where the distortion of the flexible portion caused by the movement of the weight is not unbalanced depending on the direction of acceleration applied to the weight.
[0007]
In the state where the force based on acceleration is not applied to the weight, the pedestal has a Z-axis direction that extends in the direction in which the weight fixing portion and the weight are aligned through the center of the weight fixing portion and the weight, respectively. Allowing the weight to be displaced in the triaxial direction by the force based on the acceleration acting on the weight, assuming the triaxial direction in which the two directions orthogonal to the Z-axis direction are the X-axis direction and the Y-axis direction. Thus, the support portion can be supported. In this case, the plurality of partial buffering portions are arranged at portions corresponding to the virtual X axis extending in the X axis direction and the virtual Y axis extending in the Y axis direction in the gap formed between the weight and the pedestal. preferable. In this way, the acceleration applied in the X-axis direction and the Y-axis direction can be accurately measured, and the number and amount of cushioning materials can be reduced.
[0008]
Such a buffer material can be formed from, for example, a gel substance. In this case, the weight and the pedestal have a width dimension of a plurality of gap portions (hereinafter referred to as buffer portion arrangement portions) in which a plurality of partial buffer portions are arranged in a gap formed between the weight and the pedestal. It is preferable to form in a shape smaller than the width dimension of the other gap portion. If the gel substance is placed in a gap where the gap dimensions are not uniform, the gel substance is likely to move from a gap part with a larger dimension to a smaller gap part. If it is made small, the buffer material from a gel-like substance can be easily arrange | positioned in a buffer part arrangement | positioning part.
[0009]
In this case, it is preferable that the width dimension of the buffer portion arrangement portion is 0.01 mm to 0.1 mm, and the gel substance is urethane gel or silicon gel. If the width dimension of the buffer portion arrangement portion is less than 0.01 mm, it is difficult to form the buffer portion arrangement portion. Moreover, if the width dimension of the gap | interval of a buffer part arrangement | positioning part exceeds 0.1 mm, there exists a possibility that a buffer material (silicon gel) may fall out from the inside of a buffer part arrangement | positioning part.
[0010]
When the force based on acceleration acts toward the side opposite to the side where the weight is located with respect to the acceleration sensor main body, the amount of movement when the weight moves is particularly large. Therefore, it is preferable to further include a stopper structure that regulates the amount of displacement of the weight in the triaxial direction within a predetermined range. For example, the weight has an upper surface portion facing the flexible portion, a side surface portion extending in parallel with the virtual Z axis, and an inclined surface portion extending over the upper surface portion and the side surface portion, and the pedestal faces the side surface portion. It can comprise so that it may have an opposing inner surface part and the opposing inclined surface part which opposes an inclined surface part. In this case, the cushioning material is disposed in the gap between the side surface portion and the opposed inner surface portion, and the inclined surface portion forms a first stopper surface constituting a part of the stopper structure, and the opposed inclined surface portion forms the stopper structure. A second stopper surface that constitutes a part and faces the first stopper surface at the time of regulation is formed opposite to the first stopper surface. The first and second stopper surfaces are formed so as to approach a virtual Z axis extending in the Z axis direction toward the side where the acceleration sensor main body is located, respectively, continuously in the circumferential direction or at an interval. It forms as an inclined surface. If it does in this way, in addition to suppression of a shock absorbing material, the movement of a weight will be controlled by mutual contact of a weight and a base, and damage to a flexible part can be prevented more certainly.
[0011]
The cushioning material of the semiconductor acceleration sensor of the present invention is located only in the gap and disposed by applying liquid silicon over the weight and the base so as not to seal the space, and the liquid silicon is heated and cured. Silicon may be formed by gelation. In this way, the buffer material can be easily arranged in the semiconductor acceleration sensor.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view of a semiconductor acceleration sensor according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. As shown in both drawings, the semiconductor acceleration sensor of the present embodiment has an acceleration sensor main body 1, a weight 3 and a pedestal 5. The acceleration sensor main body 1 includes a semiconductor crystal substrate such that a weight fixing portion 7 at the center, a cylindrical support portion 9 at the outer peripheral portion, and a flexible portion 11 is left between the weight fixing portion 7 and the support portion 9. Is formed by etching. A sensor element (not shown) is formed on the surface (front surface) of the flexible portion 11 opposite to the side where the weight fixing portion 7 and the support portion 9 are located. This sensor element extends in the direction in which the weight fixing portion 7 and the weight 3 are arranged through the weight fixing portion 7 and the center C of the weight 3 in a state where a force based on acceleration is not applied to the weight 3. Assuming a three-axis direction in which the direction is the Z-axis direction and the two directions orthogonal to the Z-axis direction are the X-axis direction and the Y-axis direction, the virtual X-axis lines XL and Y-axis directions extending in the X-axis direction X-axis direction acceleration detecting diffusion resistor, Y-axis direction acceleration detecting diffusion resistor, and Z-axis direction acceleration detecting diffusion resistor for detecting acceleration in the direction of the extending virtual Y-axis line YL and virtual Z-axis line ZL extending in the Z-axis direction, respectively It is composed of The semiconductor acceleration sensor according to the present embodiment has a sensor element in which the weight 3 moves and the flexible portion 11 is distorted by the acceleration based on the force applied from the outside or the force based on the gravitational acceleration applied in a tilted stationary state. The resistance value of each diffused resistor that constitutes s changes to detect the acceleration corresponding to the amount of strain.
[0013]
As shown in FIGS. 3A and 3B, the weight 3 is made of tungsten, and is external to a space in which one end is fixed to the weight fixing portion 7 and the other end is surrounded by the support portion 9. Is located. The weight 3 is integrally formed by a cylindrical main body 3a and four protrusions 3b projecting in a direction in which the virtual X axis XL and the virtual Y axis YL extend from the side surface of the main body 3a toward the base 5. Has been. The main body portion 3a has a circular upper surface portion 3c facing the flexible portion 11, and the weight fixing portion 7 is fixed at the center of the upper surface portion 3c. The projecting portion 3b includes an opposing curved surface 3d having a circular cross section projecting toward the pedestal 5 in the vicinity of the virtual X axis XL or the virtual Y axis YL, and a dent from the pedestal 5 side located on both sides of the opposing curved surface 3d. The cross section has two side curved surfaces 3e and 3e each having an arc shape, and an inclined surface portion 3f formed between the opposing curved surface 3d and the side curved surface 3e and the upper surface portion 3c. . The opposed curved surfaces 3d are formed such that the four opposed curved surfaces 3d are positioned on the same virtual circle concentric with the upper surface portion 3c. The side curved surface 3e is curved so as to form one arc together with the side curved surface 3e of the adjacent protruding portion 3b. In the present embodiment, the opposing curved surface 3d and the side curved surface 3e form a side surface portion 3g extending parallel to the virtual Z axis ZL. The inclined surface portion 3f is inclined so as to approach the virtual Z-axis line ZL toward the side where the acceleration sensor main body 1 is located.
[0014]
As shown in FIGS. 1 and 2, the pedestal 5 is formed of glass, and has a cylindrical shape in which the outer peripheral side contour of the cross section is square and the inner peripheral side contour is circular. Yes. The pedestal 5 supports the support portion 9 so as to allow the weight 3 to be displaced in the three axial directions of the X axis, the Y axis, and the Z axis by a force based on the acceleration acting on the weight 3 and the weight. The weight 3 is arranged to surround the weight 3 so as to allow the weight 3 to move by a force based on the acceleration acting on the weight 3. As a result, a gap 13 is formed between the weight 3 and the base 5. The inner peripheral portion of the pedestal 5 includes an opposed inner surface portion 5a facing the side surface portion 3g of the weight 3, an opposed inclined surface portion 5b facing the inclined surface portion 3f of the weight 3 and contacting the inclined surface portion 3f during regulation. have. Similarly to the inclined surface portion 3f, the opposing inclined surface portion 5b is inclined so as to approach the virtual Z axis ZL toward the side where the acceleration sensor main body 1 is located, and has a truncated conical shape. In a state where no acceleration is applied to the weight 3, the gap between the opposing inclined surface portion 5 b and the inclined surface portion 3 f is formed to be substantially equal in the circumferential direction. In the present embodiment, the acute angle θ at which the virtual surface extending from the inclined surface portion 3f or the opposing inclined surface portion 5b intersects the virtual Z axis ZL is preferably 30 ° to 60 °. In the present embodiment, a first stopper surface and a second stopper surface are constituted by the inclined surface portion 3f and the opposed inclined surface portion 5b, and the weight 3 is formed by the first stopper surface and the second stopper surface. A stopper structure that restricts the amount of displacement in the triaxial direction within a predetermined range is configured.
[0015]
As described above, the opposing curved surface 3d of the weight 3 protrudes toward the pedestal 5 in the vicinity of the virtual X axis XL or the virtual Y axis YL, so that it is in the vicinity of the position corresponding to the virtual X axis XL and the virtual Y axis YL. The width dimension L1 of the gap portion 13a between the opposed inner surface portion 5a of the pedestal 5 and the opposed curved surface 3d of the weight 3 is smaller than the width dimension of the gap portions of other portions. In the present embodiment, the width L1 of the gap portion 13a is 0.01 mm to 0.1 mm. In the gap portion 13a, a cushioning material 15 composed of four partial cushioning portions 15A to 15D is arranged at equal intervals in the circumferential direction of the weight 3. In other words, the width dimension L1 of the four gap portions (buffer portion arrangement portions) 13a in which the four partial buffer portions 15A to 15D are arranged in the gap 13 is formed to be smaller than the width dimensions of the other gap portions. Has been. The four partial buffer portions 15A to 15D are formed of a gel-like substance made of silicon gel, and the movement of the weight 3 is not significantly restricted, and the flexible portion 11 of the acceleration sensor main body 1 is moved by the movement of the weight 3. It has enough elasticity and flexibility to prevent damage. These partial buffering portions 15A to 15D are arranged so as to be joined only to both the weight 3 and the pedestal 5 so as not to seal the space surrounded only by the gap portion 13a and surrounded by the support portion 9. In the present embodiment, liquid silicone sold under the trade name of silicone gel KE1055 from Shin-Etsu Silicon Co., Ltd. is disposed at a predetermined position in the gap portion 13a by coating or the like, and this liquid silicon is heated at 150 ° C. for 1 hour. The liquid silicon was cured to form the buffer material 15 made of silicon gel.
[0016]
In the semiconductor acceleration sensor of the present embodiment, when the weight 3 tries to move greatly due to the force based on the acceleration, the movement of the weight 3 is suppressed by the buffer material 15, so that the weight 3 moves more than necessary. In addition, damage to the flexible portion 11 can be prevented. Therefore, unlike the prior art, it is not necessary to form the gap 13 formed between the weight 3 and the pedestal 5 with a small size, and the semiconductor acceleration sensor can be easily manufactured. Further, since the cushioning material 15 is located only in the gap 13, the sensor element is not affected by the temperature change by the cushioning material 15 as in the prior art, and prevents the accuracy of the sensor element from being lowered. be able to.
[0017]
FIG. 4 is a cross-sectional view of a semiconductor acceleration sensor according to another embodiment of the present invention. Since the semiconductor acceleration sensor of the present embodiment has the same structure as the semiconductor acceleration sensor shown in FIG. 1 except for the shape of the pedestal 25, the same member as the semiconductor acceleration sensor shown in FIG. A reference numeral 20 is added to the reference numeral, and the description thereof is omitted. In the present embodiment, the pedestal 25 has a cylindrical shape in which the outer peripheral side contour of the cross section is square and the inner peripheral side contour is octagonal. The opposed inner surface portion 25a of the pedestal 25 intersects with the virtual X axis line XL or the virtual Y axis line YL and intersects with the four opposed curved surfaces 23d of the weight 23 so as to face the virtual opposed axial surfaces 25c. There are four non-axially facing surfaces 25d that face the four side curved surfaces 23e of the weight 23 without intersecting the X axis line XL or the virtual Y axis line YL. The opposed inclined surface portion (portion corresponding to reference numeral 5b in FIG. 1) facing the inclined surface portion (portion corresponding to reference numeral 3f in FIG. 1) of the weight 23 of the pedestal 25 has a truncated octagonal pyramid shape. ing.
[0018]
As described above, the axially opposing surface 25c is orthogonal to the virtual X axis XL or the virtual Y axis YL, and the opposing curved surface 23d of the weight 23 protrudes toward the pedestal 25 near the virtual X axis XL or the virtual Y axis YL. Therefore, the width dimension of the gap 33 between the weight 23 and the pedestal 25 becomes smaller as it approaches the virtual X axis XL or the vicinity of the virtual Y axis YL. In other words, as the width dimension of the four gap portions (buffer portion arrangement portions) 33a in which the four partial buffer portions 35A to 35D are arranged in the gap 33 approaches the virtual X axis XL or the vicinity of the virtual Y axis YL, The weight 23 and the pedestal 25 are formed in a shape smaller than the width dimension of the gap part, and the width dimension L2 of the minimum part is 0.01 mm to 0.1 mm. In the semiconductor acceleration sensor of the present embodiment, when the liquid silicone is disposed in the gap 33 by coating or the like, the liquid silicon can be disposed closer to the virtual X axis XL or the virtual Y axis YL.
[0019]
The weight and the pedestal are not limited to the shapes in the above example, and various shapes can be adopted. For example, the pedestal can be formed in a shape in which a portion near the virtual X axis line XL or the virtual Y axis line YL on the inner peripheral side of the pedestal protrudes toward the weight side.
[0020]
In the above example, the stopper structure including the inclined surface portion 3f and the opposing inclined surface portion 5b is provided, but it is needless to say that the stopper structure may not be provided.
[0021]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the semiconductor acceleration sensor which can prevent damage to a flexible part can be obtained easily, without reducing the precision of a sensor element.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor acceleration sensor according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
FIGS. 3A and 3B are a side view and a plan view of a weight of the semiconductor acceleration sensor shown in FIG.
FIG. 4 is a cross-sectional view of a semiconductor acceleration sensor according to another embodiment of the present invention.

Claims (3)

中心部に重錘固定部、外周部に筒状の支持部、そして前記重錘固定部と前記支持部との間に可撓部を残すように半導体結晶基板にエッチングが施されて形成され且つ前記可撓部にセンサ素子が形成された加速度センサ本体と、
一端が前記重錘固定部に固定され且つ他端が前記支持部によって囲まれた空間の外部に位置するような形状寸法を有する重錘と、
前記支持部を支持し且つ前記重錘に作用する加速度に基づく力により前記重錘が動くのを許容するようにして前記加速度センサ本体から突出する前記重錘の周囲を囲む筒状の台座とを具備し、
前記重錘と前記台座との間に形成された間隙内に、前記重錘の動きを著しく拘束せず且つ前記重錘の動きにより前記加速度センサ本体の前記可撓部が損傷を受けるのを阻止する緩衝材が配置されている半導体加速度センサであって、
前記緩衝材は前記間隙内にのみ位置し且つ前記空間を密閉しないように前記間隙内に配置されている複数の部分緩衝部から構成されており、
前記台座は、前記重錘に加速度に基づく力が加わっていない状態において、前記重錘固定部及び前記重錘の中心をそれぞれ通って前記重錘固定部及び前記重錘が並ぶ方向に延びる方向をZ軸方向とし、該Z軸方向と直交する二つの方向をX軸方向及びY軸方向とする三軸方向を仮定したときに、前記重錘に作用する加速度に基づく力により前記重錘が前記三軸方向に変位するのを許容するように前記支持部を支持しており、
前記複数の部分緩衝部が、前記X軸方向に延びる仮想X軸線及び前記Y軸方向に延びる仮想Y軸線上に位置する前記間隙内の複数の間隙部分に配置されており、
前記複数の部分緩衝部がゲル状物質から形成されており、
前記重錘及び前記台座は、前記間隙内における前記複数の部分緩衝部が配置される前記複数の間隙部分の幅寸法が他の間隙部分の幅寸法よりも小さくなる形状を有している半導体加速度センサ。
The semiconductor crystal substrate is formed by etching so as to leave a weight fixing portion at the center, a cylindrical support portion at the outer peripheral portion, and a flexible portion between the weight fixing portion and the support portion, and An acceleration sensor body in which a sensor element is formed in the flexible part;
A weight having a shape and dimensions such that one end is fixed to the weight fixing portion and the other end is located outside the space surrounded by the support portion;
A cylindrical pedestal surrounding the weight projecting from the acceleration sensor main body so as to allow the weight to move by a force based on acceleration acting on the weight and supporting the support portion; Equipped,
In the gap formed between the weight and the pedestal, the movement of the weight is not significantly restricted, and the movement of the weight prevents the flexible part of the acceleration sensor body from being damaged. A semiconductor acceleration sensor in which a cushioning material is disposed,
The cushioning material is composed of a plurality of partial cushioning portions located only in the gap and disposed in the gap so as not to seal the space ,
The pedestal has a direction extending in a direction in which the weight fixing portion and the weight are aligned through the center of the weight fixing portion and the weight, respectively, in a state where a force based on acceleration is not applied to the weight. Assuming a three-axis direction in which the Z-axis direction and two directions orthogonal to the Z-axis direction are the X-axis direction and the Y-axis direction, the weight is caused by the force based on the acceleration acting on the weight. The support part is supported so as to allow displacement in three axial directions,
The plurality of partial buffering portions are disposed in a plurality of gap portions in the gap located on a virtual X axis extending in the X axis direction and a virtual Y axis extending in the Y axis direction,
The plurality of partial buffer portions are formed of a gel-like substance ;
The weight and the pedestal have a shape in which the width dimension of the plurality of gap portions in which the plurality of partial buffer portions are arranged in the gap is smaller than the width dimension of other gap portions. Sensor.
前記複数の部分緩衝部が配置される複数の間隙部分の幅寸法が0.01mm〜0.1mmであり、前記ゲル状物質がウレタンゲルまたはシリコンゲルである請求項に記載の半導体加速度センサ。The width dimension of the plurality of gap portions in which a plurality of partial buffering portion is disposed is 0.01 mm to 0.1 mm, a semiconductor acceleration sensor according to claim 1 wherein the gel material is a urethane gel or a silicone gel. 前記重錘の前記三軸方向への変位量を所定の範囲内に規制するストッパ構造を更に備え、
前記重錘は、前記可撓部に対向する上面部と、前記仮想Z軸線に平行に延びる側面部と、前記上面部と前記側面部とに亘る傾斜面部とを有し、
前記台座は、前記側面部と対向する対向内面部と、前記傾斜面部と対向する対向傾斜面部とを有し、
前記緩衝材は、前記側面部と前記対向内面部との間の間隙部に配置されており、
前記傾斜面部により前記ストッパ構造の一部を構成する第1のストッパ面が形成され、
前記対向傾斜面部により前記ストッパ構造の一部を構成し且つ前記第1のストッパ面と対向して規制時に前記第1のストッパ面と接触する第2のストッパ面が形成され、
前記第1及び第2のストッパ面は、それぞれ周方向に連続してまたは間隔をあけて形成され且つ前記加速度センサ本体が位置する側に向かうに従って前記Z軸方向に延びる仮想Z軸線に近づくように傾斜する傾斜面として形成されていることを特徴とする請求項1または2に記載の半導体加速度センサ。
A stopper structure for restricting the amount of displacement of the weight in the three-axis direction within a predetermined range;
The weight includes an upper surface portion facing the flexible portion, a side surface portion extending in parallel with the virtual Z axis, and an inclined surface portion extending over the upper surface portion and the side surface portion.
The pedestal has an opposed inner surface portion that faces the side surface portion, and an opposed inclined surface portion that faces the inclined surface portion,
The cushioning material is disposed in a gap between the side surface portion and the opposed inner surface portion,
A first stopper surface constituting a part of the stopper structure is formed by the inclined surface portion,
A second stopper surface that forms a part of the stopper structure by the opposed inclined surface portion and is opposed to the first stopper surface and contacts the first stopper surface at the time of regulation,
Each of the first and second stopper surfaces is formed continuously in the circumferential direction or at an interval so as to approach a virtual Z axis extending in the Z axis direction toward the side where the acceleration sensor body is located. The semiconductor acceleration sensor according to claim 1 , wherein the semiconductor acceleration sensor is formed as an inclined surface that is inclined.
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