JP4016504B2 - Semiconductor film manufacturing method and annealing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor film in which a semiconductor thin film formed on a substrate surface is irradiated with energy light and subjected to crystallization treatment or treatment for improving crystallinity, and a thin film transistor (hereinafter referred to as TFT) using the semiconductor film. ), An active matrix substrate using a TFT manufactured by this method, and an annealing apparatus used in a method for manufacturing a semiconductor film.
[0002]
[Prior art]
In an active matrix substrate used for a liquid crystal display device, it is desired to manufacture a TFT by a low temperature process so that a general-purpose and inexpensive glass substrate can be used as the substrate. Here, among the silicon films necessary for forming the TFT channel region and the like, although the amorphous silicon film can be formed by a low temperature process, there is a disadvantage that the mobility of the TFT obtained with amorphous silicon is low. .
[0003]
In view of this, a method (laser annealing) in which an amorphous silicon film formed on a substrate is irradiated with laser light (energy light) to be melted and crystallized has been studied. In such melt crystallization with laser light, the crystallinity of the crystalline semiconductor film obtained by the intensity of the irradiated laser light is greatly different. If the energy density of the irradiated laser beam is too weak, sufficient crystal growth will not proceed. Conversely, if it is too strong, the amorphous silicon film will be an aggregate of microparticles with a grain size of several to several tens of nanometers called microcrystallization. turn into. For this reason, the irradiation energy density of the laser beam is set to a level as strong as possible without causing microcrystallization.
[0004]
[Problems to be solved by the invention]
However, in the conventional semiconductor film manufacturing method, as a method for determining such a microcrystallization threshold, one pulse of laser light irradiation is performed at least once as a preliminary irradiation step, and the substrate is used as a condensing lamp. It was necessary to make a judgment that relied on experience and intuition by visual observation of the operator, such as holding it under strong light.
[0005]
As an analytical method, the half-value width or half-value width of a Raman spectrum by Raman spectroscopic analysis has been used as a material for determining crystallinity. However, this method requires processing and analysis of data by software in order to obtain the half width, and is not suitable for in-situ crystallinity feedback, but rather has been used as confirmation after processing.
[0006]
Furthermore, the threshold for microcrystallization varies depending on the beam shape, the transmittance of the optical system, the film thickness of the amorphous silicon film, and the like. For this purpose, it is indispensable to perform such a determination work for each substrate, which is very burdensome in terms of work efficiency, and cannot be caught up if processing such as the half-width analysis of the Raman spectroscopic analysis described above is performed. As a countermeasure, the irradiation energy density is determined in anticipation of fluctuations in various conditions within the flow range of a certain number of substrates. Since the irradiation energy density is lowered by a small amount, the TFT characteristics are also lowered.
[0007]
In view of these problems, the problem of the present invention is that laser crystallization is performed under irradiation energy density conditions that do not constantly exceed this microcrystallization in response to the current micro-crystallization threshold that changes from substrate to substrate. A method for producing a high-quality semiconductor film with no variation in the crystallization rate of the semiconductor film by using a simple confirmation of the microcrystallization threshold for each substrate and controlling the energy density. An object of the present invention is to provide a TFT manufacturing method, an active matrix substrate using a TFT manufactured by this method, and an annealing apparatus used for a semiconductor film manufacturing method.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, in the present invention, a semiconductor film having a film forming process for forming a semiconductor film on a substrate and an annealing process for irradiating the semiconductor film with energy light to obtain a crystalline semiconductor film. In the manufacturing method,
Before the film-forming step, the semiconductor film is irradiated with energy light, and a pre-irradiation step of determining an irradiation energy density of the energy light based on light from the semiconductor film is provided.
[0009]
In the present invention, after confirming the threshold for microcrystallization as described above in a simple and accurate manner for each substrate on which an amorphous silicon film is formed, the energy density is not exceeded. The entire surface of the substrate is crystallized. For this reason, the semiconductor film is annealed with an optimum energy density not exceeding the threshold for microcrystallization, and has high crystallinity. Further, there is no variation in the crystallization rate of the semiconductor film between the substrates. Therefore, when a TFT is manufactured using the semiconductor film configured as described above, high electrical characteristics without variation can be obtained from TFTs on any substrate.
[0010]
In the present invention, the type of energy light is not limited, and even if continuous-wave laser light is used, in the preliminary irradiation step, similar conditions may be determined by hair-cut irradiation. Further, the beam cross-sectional shape in the Y-axis direction perpendicular to the longitudinal direction of the line beam may have a flat portion on the top (top flat beam) or no flat portion (Gaussian). Beam), any beam shape is effective. However, in the case of a Gaussian beam, attention is required because the width over which the threshold for microcrystallization can be confirmed is narrow.
[0011]
In the preliminary irradiation step, the semiconductor film is irradiated with energy light which is a line beam of one pulse, the semiconductor film is crystallized in a line shape, and an irradiation energy density (hereinafter referred to as microcrystalline crystallization) occurs. After that, the irradiation energy density of the annealing step for obtaining the crystalline semiconductor film is determined so as not to exceed the threshold value for microcrystallization.
[0012]
Further, the present invention is characterized in that the semiconductor film is formed in a thickness range of 10 nm to 60 nm and annealed in an energy density range of 60 to 180 mJ / cm ² . In particular, when the thickness of the semiconductor film is in the range of 20 to 40 nm, the energy density of the laser light is set in the range of 100 to 160 mJ / cm ² . By annealing the semiconductor film in such a range, it can be polycrystallized without being evaporated and without being in an amorphous state.
[0013]
Furthermore, in the annealing apparatus used in such a method for manufacturing a semiconductor film, a light irradiation apparatus including a light source unit that emits the energy light, and an optical system that shapes the energy light emitted from the light source unit into a line beam; A measurement apparatus such as Raman spectroscopic signal intensity measurement as an optical determination method for determining the state in which microcrystallization has occurred, and the microcrystallization threshold confirmed by the microcrystallization measurement apparatus. It has the irradiation apparatus which irradiates energy light with the energy density which does not exceed a value, It is characterized by the above-mentioned.
[0014]
In the method for producing a semiconductor film according to the present invention, it is preferable to produce a TFT from the semiconductor film obtained by this method, and the TFT produced by this method is a liquid crystal display device that requires high performance electrical characteristics on a large substrate. It is suitable for constructing a drive circuit and a pixel switching element on an active matrix substrate.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Before describing each embodiment of the present invention, a basic configuration of an active matrix substrate common to each embodiment and a basic process for forming a TFT will be described.
[0016]
[Basic configuration of active matrix substrate]
FIG. 1A is an explanatory diagram schematically showing a configuration of an active matrix substrate used in a liquid crystal display device.
[0017]
This active matrix substrate 2 corresponds to one substrate (2) used in the liquid crystal display device (1) as shown in FIG. 10 or FIG. 11, for example, and on the substrate 2, data lines 3 and scanning lines 4 are provided. Is formed (see FIG. 1). FIG. 10 is a plan view of the liquid crystal display device, which is formed of an active matrix substrate 2 and an opposing substrate (OP). In the active matrix substrate, drive circuits (70, 60) are formed on the substrate. FIG. 11 shows a liquid crystal display device in the HH ′ cross section of FIG.
[0018]
A pixel electrode is connected to the data line 3 and the scanning line 4 via a pixel thin film transistor (10) on the substrate (2), and a pixel region 5 is formed on a matrix. In addition, an image signal is input to the pixel TFT 10 to form a liquid crystal capacitor 6 of a liquid crystal cell.
[0019]
A data driver section 7 including a shift register 71, a level shifter 72, a video line 73, and an analog switch 74 is configured for the data line 3, and a scan driver including a shift register 81 and a level shifter 82 for the scanning line 4. Part 8 is configured. In the pixel region 5, a storage capacitor 25 may be formed between the scanning line 4 in the previous stage.
[0020]
In the data driver unit 7 and the scan driver unit 8, as illustrated in FIG. 1B, a two-stage inverter includes a CMOS circuit constituted by N-type TFTs n1 and n2 and P-type TFTs p1 and p2. It is formed with high density. However, the TFT 10 of the active matrix portion 9 and the TFTs n1 and n2 of the data driver portion 7 and the P-type TFTs p1 and p2 have the same basic structure and are basically manufactured in the same process.
[0021]
As the active matrix substrate 2, only the active matrix unit 9 is configured on the substrate, the data driver unit 7 is configured on the same substrate as the active matrix unit 9, and scanning is performed on the same substrate as the active matrix unit 9. Some have a driver unit 8 and some have a data driver unit 7 and a scan driver unit 8 on the same substrate as the active matrix unit 9. Even in the case of the driver-embedded active matrix substrate 2, the shift register 71, level shifter 72, video line 73, analog switch 74, and the like included in the data driver unit 7 are all configured on the active matrix substrate 2. There are a driver built-in type and a partial driver built-in type in which some of them are formed on the active matrix substrate 2, and the present invention can be applied to both.
[0022]
2 is an enlarged plan view showing a part of the active matrix portion in which the pixel region 5 is formed in the active matrix substrate 2 of the present embodiment, and FIG. 3A is a line AA ′ in FIG. FIG. 3B is a cross-sectional view taken along the line BB ′ of FIG. Since the TFTs such as the data driver unit 7 basically have the same structure, their illustration is omitted.
[0023]
In these drawings, the TFT 10 in any pixel region 5 has a source region 11 electrically connected to the data line 3 through a contact hole 17 formed in the interlayer insulating film 16, and an interlayer insulating film to the pixel electrode 19. The drain region 12 electrically connected through the contact hole 18 formed in the channel 16, the channel region 13 positioned between the drain region 12 and the source region 11, and the channel region 13 via the gate insulating film 14 The gate electrode 15 is opposed. The gate electrode 15 is configured as a part of the scanning line 4. A base protective film 21 made of a silicon oxide film is formed on the surface side of the substrate 20.
[0024]
[Basic configuration of manufacturing method of active matrix substrate 2]
With reference to FIG. 4, the basic steps of the TFT manufacturing method will be described. FIG. 4 is a process sectional view of the TFT corresponding to the section taken along the line AA ′ of FIG.
[0025]
In this example, the following steps are performed using a 300 mm square non-alkali glass plate as the glass substrate (underlying protective film forming step).
4A, first, a silicon oxide film having a film thickness of 300 nm to be the base protective film 21 is formed on the surface of the glass substrate under a temperature condition of 250 ° C. to 400 ° C. by PECVD. The silicon oxide film can also be formed by the APCVD method. In this case, the silicon oxide film is formed using monosilane and oxygen as source gases in a state where the temperature of the substrate 20 is set in a range from 250 ° C. to 450 ° C. .
[0026]
(Semiconductor film deposition process)
Next, an intrinsic silicon film 30 (semiconductor film) is deposited on the surface of the base protective film 21 to a thickness of about 50 nm. In this example, the amorphous silicon film 30 is deposited at a deposition temperature of 425 ° C. while flowing 200 SCCM of disilane as a source gas using a high vacuum type LPCVD apparatus. In forming the silicon film 30, a PECVD method or a sputtering method may be used. According to these methods, the film formation temperature can be set in a range from room temperature to 350.degree.
[0027]
(Annealing process by laser melt crystallization method)
Next, as shown in FIG. 4B, the amorphous silicon film 30 is irradiated with laser light to modify the amorphous silicon film 30 into polycrystalline silicon. In this example, for example, an excimer laser (wavelength: 308 nm) of Zenon chloride (XeCl) is irradiated. By passing this laser beam with an output of 200 W through an optical system, a trapezoidal line beam having a longitudinal direction of 150 mm, a cross-sectional beam shape of 0.35 mm at the top and 0.45 mm at the bottom is formed. Yes. By irradiating this line beam while overlapping the substrate at a pitch equal to or less than the beam width of the upper base, the amorphous silicon film becomes a polycrystalline silicon film by melt crystallization.
[0028]
In this step, the laser irradiation is performed at a room temperature (25 ° C.) of the substrate 20 in a vacuum atmosphere, an inert gas atmosphere or the air.
[0029]
In the present invention, when performing the annealing process, in determining the irradiation energy density, after determining the energy density that causes microcrystallization by an optical method, the irradiation is performed with an energy density that does not exceed the energy density. However, the detailed description will be described later for each embodiment.
[0030]
(Silicon film patterning process)
Next, as illustrated in FIG. 4C, the silicon film 30 that has been polycrystallized in the annealing process is patterned using a photolithography technique to form an island-shaped silicon film 31.
[0031]
(Gate insulating film formation process)
Next, as shown in FIG. 4D, a gate oxide film 14 made of a silicon oxide film is formed on the silicon film 31 under a temperature condition of 250 ° C. to 400 ° C. by PECVD.
[0032]
(Gate electrode formation process)
Next, after forming a tantalum thin film having a thickness of 600 nm on the surface side of the gate oxide film 14 by sputtering, the tantalum thin film is patterned using a photolithography technique to form the gate electrode 15. In this example, when forming the tantalum thin film, the substrate temperature is set to 180 ° C., and an argon gas containing 6.7% nitrogen gas is used as a sputtering gas. The tantalum thin film thus formed has an α structure in crystal structure and a small specific resistance.
[0033]
(Impurity introduction process)
Next, impurity ions are implanted into the silicon film 31 using the bucket electrode 15 as a mask by using a bucket type mass non-separation type ion implantation apparatus (ion doping apparatus). In the case of forming an N-channel TFT, phosphine diluted with hydrogen gas so as to have a concentration of 5% is used as a source gas. As a result, the source region 11 and the drain region 12 are formed in a self-aligned manner with respect to the gate electrode 15. At this time, a portion of the silicon film 31 where the impurity ions are not implanted becomes the channel region 13. At this time, a region for forming a P-channel TFT is covered with a resist mask.
[0034]
Conversely, when forming a P-channel TFT, diborane or the like diluted to a concentration of 5% with hydrogen gas is used as a source gas. In this case, an N-channel TFT is formed. The region is covered with a resist mask.
[0035]
(Interlayer insulation film formation process)
Next, as shown in FIG. 4E, a silicon oxide film having a thickness of 500 nm is formed as the interlayer insulating film 16 under a temperature condition of 250 ° C. to 400 ° C. by PECVD. At this time, the source gases are TEOS and oxygen.
[0036]
(Activation process)
Next, heat treatment is performed at 400 ° C. for 1 hour in an argon gas atmosphere containing 3% hydrogen to activate the implanted phosphorus ions and to modify the interlayer insulating film 16.
[0037]
(Wiring process)
Next, contact holes 17 and 18 are formed in the interlayer insulating film 16. Thereafter, as shown in FIG. 3A, the source electrode (data line 3) is electrically connected to the source region 11 through the contact holes 17 and 18, and the drain electrode (pixel electrode 19) is connected to the drain region. 12 is electrically connected to form a TFT 10.
[0038]
Although the above manufacturing method is an example in which the TFT 10 is manufactured with a self-aligned structure, the present invention can be applied even when the TFT 10 is manufactured with an LDD structure or an offset gate structure. Although description of the structure and manufacturing method in this case is omitted, a low concentration source / drain region is formed in a portion of the source / drain region facing the end of the gate electrode 15 by using a resist mask or a sidewall. (LDD region) or an offset region is formed.
[0039]
[Energy density and film quality during laser irradiation]
Next, in the annealing step described with reference to FIG. 4B, the relationship between the energy density (energy intensity) of the laser light irradiated to the amorphous silicon film 30 and the film quality after laser irradiation is shown in FIG. This will be described with reference to FIG.
[0040]
In any embodiment of the present invention, as will be described later, an amorphous silicon film is polycrystallized by a laser melt crystallization method. In this laser melt crystallization method, the energy density E is increased as shown in FIG. As a result, the silicon film is melted and solidified at a temperature equal to or greater than Ec indicated by “▲” and the alternate long and short dash line L1, and polycrystallizes. Here, as the energy density E is increased, the crystallization progresses. However, when the energy density E exceeds “□” and Ea indicated by the dotted line L2, the silicon film is microcrystallized and the mobility is lowered. .
[0041]
Further, when the silicon film is thin, even if the energy density E does not exceed Ea, if the energy density E exceeds “O” and Eb indicated by a two-dot chain line L3, the film returns to the amorphous silicon film. . If the energy density E exceeds “□” and Ed indicated by the solid line L4, the silicon film evaporates.
[0042]
Further, the crystallinity of the silicon film when the energy density E of the pulsed laser beam is changed is indicated by “◯” and a solid line L5 in FIG. Since the vertical axis in FIG. 6 is the half-value width of the Raman peak, the smaller the value, the higher the crystallinity. As can be seen from comparison of these results, in laser melt crystallization, the crystallinity can be enhanced by setting the maximum value of the energy density E to a value very close to the upper limit value Ea. Incidentally, the fact that the half-value width of the Raman peak jumps up in the vicinity of slightly exceeding the upper limit value Ea is a state in which microcrystallization of the silicon film occurs.
[0043]
Here, in order to form the TFT 10 from an amorphous silicon film, it is desired to increase the crystallinity of the silicon film 30 as much as possible to obtain high mobility. Therefore, ideally, the energy density of the laser light is preferably set to an energy density slightly lower than the threshold for microcrystallization.
[0044]
However, because the energy density varies due to, for example, the stability of the pulse laser, etc., if the ideal energy density is set, the energy density, which varies strongly, becomes the threshold for microcrystallization. When this value is exceeded, the crystallinity deteriorates. Therefore, in consideration of such variations, it is unavoidable to set a value lower than the ideal set value so as not to exceed the threshold value for microcrystallization even when it varies strongly.
[0045]
In order to obtain such a high-quality crystalline semiconductor film, it is necessary to accurately confirm the threshold for microcrystallization with respect to the amorphous silicon film. In addition, the microcrystallization threshold variation factors include beam shape variation, optical system transmittance variation, and amorphous silicon film thickness variation. It is important to check.
[0046]
Therefore, the present invention provides a simple and accurate optical determination method for the microcrystallization threshold value, and uses a crystallization annealing apparatus equipped with the determination device to optimize the threshold for each substrate. Crystallization is performed by the crystallization energy density so that a high-quality crystalline semiconductor film can be formed without variation between substrates.
[0047]
[Example 1]
FIG. 7 is a schematic diagram of an annealing apparatus for a crystalline semiconductor film using signal intensity measurement of Raman spectroscopic analysis as a method for determining a microcrystallization threshold to which the present invention is applied. In a laser irradiation chamber 60 where laser light irradiation is performed, a laser 64 for deriving excitation light 66 for Raman spectroscopic analysis (in this example, Ar laser: 514.5 nm is used) and scattered light 67 from a sample are contained. An introductory part is provided. A spectroscope and a CCD (Charge Coupled Device) 63 for counting Raman spectrum signals are provided after the introduction portion.
[0048]
In the preliminary irradiation process, the substrate 62 with the amorphous silicon film on the transfer stage 61 is irradiated with a laser beam that is a pulse beam of one pulse, and a part of the amorphous silicon film is crystallized in a line shape. The irradiation energy density at which the crystalline semiconductor film causes microcrystallization is obtained by using a signal intensity measurement technique of Raman spectroscopic analysis for the crystallized portion. A series of processing such as digitization of scattered light intensity is processed by an attached Raman control device 65 including a computer. A method for determining the threshold for microcrystallization from the change in signal intensity at this time will be described.
[0049]
FIG. 8 shows the signal intensity of Raman spectroscopic analysis. The Raman half-width described in [Energy density and film quality during laser irradiation] slightly increases when the threshold value for microcrystallization is reached, and the signal intensity rapidly decreases. This is because, when the threshold for microcrystallization is reached, the crystallinity of polycrystalline silicon is lowered, and the surface roughness is smoothed and smoothed, so that the observed scattered light is reduced. As a result, by looking at the signal intensity, it is possible to easily determine the energy density causing the threshold for microcrystallization without performing data analysis and obtaining the Raman half width.
[0050]
After the operator confirms the microcrystallization threshold from the signal intensity measured in this way, the irradiation energy density, which is slightly lower than the microcrystallization threshold, is input to the laser oscillator control system. Annealing annealing can be performed. If this signal intensity data is taken into the laser oscillator and differentiated, and programmed to determine the threshold for microcrystallization from the point where the gradient becomes maximum, the irradiation energy density is automatically optimized and crystallization annealing is performed. Is more efficient.
[0051]
[Example 2]
Similarly, a microcrystallization threshold determination system incorporating an optical microscope system and an evaluation system will be described as a second embodiment. The optical microscope is attached to the irradiation chamber and can be observed immediately after laser light irradiation.
[0052]
Here, the amorphous silicon film in the preliminary irradiation process is irradiated with a laser beam, which is a line beam of one pulse, and after crystallizing a part of the amorphous silicon film into a line shape, the crystallized part is optically processed. A method for obtaining the irradiation energy density at which the crystalline semiconductor film causes microcrystallization in the dark field mode of the microscope will be described.
[0053]
The optical microscope observes incident light in a dark field, which is not directly reflected light on the substrate surface but captures scattered light on the surface. Therefore, the surface of the semiconductor film that has undergone microcrystallization is observed as a clear change in scattered light because the surface roughness is rapidly reduced. Further, the scattered light is captured by the CCD, and then the components are separated into three colors of R (Red) G (Green) B (Blue), and the change becomes clearer. FIG. 9 shows the results for R (“●” and solid line L11), G (“■” and dotted line L12), and B (“▲” and one-dot chain line L13).
[0054]
Under the conditions indicated by the arrows in the figure, the strength sharply decreases, and it is determined that microcrystallization has been reached.
[0055]
After the operator confirms the microcrystallization threshold from the reflected light intensity measured in this way, the irradiation energy density that is slightly lower than the microcrystallization threshold is input to the control system of the laser oscillator. Crystallization annealing can be performed. Also, if this reflected light intensity data is taken into the laser oscillator and differentiated, and programmed to determine the threshold for microcrystallization from the point where the gradient becomes maximum, the irradiation energy density is automatically optimized and crystallized. Since annealing can be performed, it is much more efficient.
[0056]
【The invention's effect】
As described above, in the active matrix substrate according to the present invention, when the energy light irradiation for obtaining the polycrystalline silicon film is performed, this microscopic continuity is constantly corresponding to the microcrystallization threshold that changes for each substrate. By performing laser crystallization under irradiation energy density conditions that do not exceed crystallization, it is possible to form a high-quality crystalline semiconductor film with no variation in crystallization rate, and to achieve high mobility TFT with good uniformity Can be manufactured.
[Brief description of the drawings]
FIG. 1A is an explanatory diagram schematically showing an active matrix substrate of a liquid crystal display device, and FIG. 1B is an explanatory diagram of a CMOS circuit used for its drive circuit.
FIG. 2 is a plan view showing an enlarged pixel region on an active matrix substrate of a liquid crystal display device.
3A is a cross-sectional view taken along the line II ′ of FIG. 2, and FIG. 3B is a cross-sectional view taken along the line II-II ′ of FIG.
4 is a process sectional view of a TFT with respect to a section taken along line II ′ shown in FIG. 2 in the embodiment of the present invention.
FIG. 5 is an explanatory diagram showing a relationship between an energy density in laser melt crystallization and a change occurring in a silicon film.
FIG. 6 is a graph showing the relationship between energy density and crystallinity in laser melt crystallization.
FIG. 7 is an explanatory view showing an annealing apparatus for a crystalline semiconductor film according to an embodiment of the present invention.
FIG. 8 is a graph showing the relationship between energy density and Raman signal intensity in laser melt crystallization according to an example of the present invention.
FIG. 9 is a graph showing the relationship between energy density in laser melt crystallization and scattered light intensity in an optical microscope dark field mode according to an embodiment of the present invention.
FIG. 10 is a plan view of a liquid crystal display device according to an embodiment of the present invention.
11 is a cross-sectional view of the liquid crystal display device according to the embodiment of the present invention, and is a cross section taken along line HH ′ of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Liquid crystal display device 2 Active matrix substrate 3 Data line 4 Scan line 5 Pixel area 6 Liquid crystal capacity 9 Active matrix part 10 TFT
11 Source region 12 Drain region 13 Channel region 14 Gate insulating film 15 Gate electrode 16 Interlayer insulating films 17, 18 Contact hole 19 Pixel electrode 20 Glass substrate 21 Base protective film 25 Retention capacitance 30 Silicon film (silicon film 30)
31 Island-like silicon film (silicon film 30)

Claims (9)

In a method for manufacturing a semiconductor film, comprising: a film forming step for forming a semiconductor film on a substrate; and an annealing step for irradiating the semiconductor film with energy light to obtain a crystalline semiconductor film.
Irradiating the semiconductor film with energy light that is a line beam of one pulse, and having a preliminary irradiation step of crystallizing the semiconductor film in a line shape;
After obtaining the irradiation energy density at which the crystalline semiconductor film causes microcrystallization from the change in the surface scattered light intensity of the crystallized semiconductor film portion (hereinafter referred to as the threshold for microcrystallization), A method of manufacturing a semiconductor film, comprising determining an irradiation energy density in an annealing step for obtaining the crystalline semiconductor film so as not to exceed a threshold value for microcrystallization. In claim 1,
A method for producing a semiconductor film, characterized in that the threshold for microcrystallization is determined from a change in surface scattered light intensity of the semiconductor film by signal intensity measurement by Raman spectroscopic analysis. In claim 2,
Differential processing of the signal intensity data by the Raman spectroscopic analysis with respect to the irradiation energy density of the energy light, and determining the threshold value of the microcrystallization from the irradiation energy density at which the gradient of the signal intensity data is maximized. A method for manufacturing a semiconductor film. In claim 1,
A method for producing a semiconductor film, characterized in that the threshold for microcrystallization is determined by measuring the intensity of incident light in a dark field of an optical microscope from a change in surface scattered light intensity of the semiconductor film. In claim 4,
Differentiating the light intensity data of the incident light with respect to the irradiation energy density of the energy light, and determining the microcrystallization threshold from the irradiation energy density at which the gradient of the light intensity data is maximized. A method for manufacturing a semiconductor film. In the manufacturing method of the semiconductor film in any one of Claims 1 thru | or 5,
The method for producing a semiconductor film, wherein the energy light is laser light. In the manufacturing method of the semiconductor film in any one of Claims 1 thru | or 6,
The method of manufacturing a semiconductor film, wherein the semiconductor film is formed in a thickness range of 10 nm to 60 nm and annealed at an energy energy irradiation energy density range of 60 to 180 mJ / cm ² . In claim 7,
The method of manufacturing a semiconductor film, wherein the irradiation energy density is set to a range of 100 to 160 mJ / cm ² when the film thickness of the semiconductor film is in a range of 20 to 40 nm. An annealing apparatus used in the method for manufacturing a semiconductor film according to claim 1,
A light source unit that emits energy light, an optical system for converting the energy light emitted from the light source unit into a uniform line beam, and a change in surface scattered light intensity of the semiconductor film portion crystallized by the preliminary irradiation step And an analysis optical system for judging the threshold value for microcrystallization.

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