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JP4023609B2 - Substrate for magnetic recording medium and method for manufacturing magnetic recording medium - Google Patents
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JP4023609B2 - Substrate for magnetic recording medium and method for manufacturing magnetic recording medium - Google Patents

Substrate for magnetic recording medium and method for manufacturing magnetic recording medium Download PDF

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Publication number
JP4023609B2
JP4023609B2 JP2003194783A JP2003194783A JP4023609B2 JP 4023609 B2 JP4023609 B2 JP 4023609B2 JP 2003194783 A JP2003194783 A JP 2003194783A JP 2003194783 A JP2003194783 A JP 2003194783A JP 4023609 B2 JP4023609 B2 JP 4023609B2
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Prior art keywords
substrate
recording medium
magnetic recording
layer
plating
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JP2003194783A
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JP2005032320A (en
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政利 石井
俊宏 津森
優 濱口
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to JP2003194783A priority Critical patent/JP4023609B2/en
Priority to SG200404371A priority patent/SG109001A1/en
Priority to US10/886,119 priority patent/US20050008900A1/en
Priority to KR1020040053260A priority patent/KR20050007170A/en
Priority to CNA2004100698081A priority patent/CN1577508A/en
Publication of JP2005032320A publication Critical patent/JP2005032320A/en
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Description

【0001】
【発明の属する技術分野】
本発明は、磁気記録媒体用基板、及び記録層を含む磁気記録媒体に関するものである。
【0002】
【従来の技術】
磁気記録の分野において、ハードディスク装置による情報記録はパーソナルコンピュータを初めとするコンピュータの一次外部記録装置として必須である。ハードディスクドライブはその記録密度向上に伴い、従来の面内磁気記録方式に変わり、より高密度な記録が可能な垂直磁気記録方式の開発が進められている。
【0003】
垂直磁気記録では隣接ビットからの磁場が磁化方向と同じ方向となり、隣接ビットの間で閉磁路を形成し、水平磁気記録に比較して自分自身の磁化による自己減磁場(以下、反磁場と呼ぶ。)が少なく、磁化状態が安定する。
磁性膜厚の点においては、垂直磁気記録において記録密度向上に伴って特に薄くする必要が無く、これらの点から、垂直磁気記録は反磁場軽減とKuV(Kuは異方性エネルギー、特に磁気記録の場合は結晶磁気異方性エネルギーを表し、Vは単位記録ビット体積を表す。)の値を確保できるため、熱揺らぎによる磁化に対する安定性が大きく、記録限界を大きく先に拡大する事が可能となる記録方式と言える。記録媒体としては、水平記録媒体との親和性も高く、磁気記録の書き込みや読み出しも基本的には従来使われていたものと同じような技術が使用できる。
【0004】
垂直磁気記録媒体では、基板上に軟磁性裏打ち層(典型的にはパーマロイ等)、記録膜(CoCr系合金、PtCo層とPdとCoの超薄膜を交互に数層積層させた多層膜、SmCoアモルフアス膜などが候補材料等)、保護膜、潤滑膜等よりなる。垂直磁気記録媒体における裏打ち層は、軟磁性であり、かつ膜厚も概ね100nm以上500nm程度の厚膜が必要とされる。軟磁性裏打ち層は、上部記録膜からの磁束の通り道であるとともに、記録ヘッドからの書き込み用磁束の通り道ともなる。そのため、永久磁石磁気回路における鉄ヨークと同じ役割を果たしており、厚膜にする必要がある。
【0005】
水平記録媒体において非磁性Cr系下地膜を成膜するのに比較し、垂直記録媒体において軟磁性裏打ち膜を成膜することは簡単ではない。通常、水平記録媒体の各構成膜はドライプロセス(主にマグネトロンスパッタ)で、全て成膜されている(特許文献1)。垂直記録媒体においてもドライプロセスによる成膜で種々検討されている。しかしながら、ドライプロセスによる成膜では、プロセスの安定性、各種パラメータの設定の煩雑さ、そしてなにより成膜速度の低さから、量産性や生産性の上で大きな問題を抱えている。また高密度化のためには、磁気ディスク表面を浮上する磁気ヘッドの浮上高さ(フライングハイト)を極力低くする必要があり、垂直磁気記録媒体の製造において、研磨による平坦化加工が可能な厚膜の金属膜を被覆する必要が生じているが、ドライプロセスにより得られた厚膜皮膜は密着性が低く、研磨による平坦化加工が非常に困難であった。そこで、真空蒸着に比べ厚膜化が容易なメッキ法により、非磁性基板に金属膜を被覆する試みが種々検討されている。
【0006】
湿式めっきにより良好な密着性を有するメッキを行うためには、メッキ液中の金属イオンが還元を受けるのに触媒となりうる物質が母材−メッキ膜の接合部位に多量に存在することが重要である。さらに、形成されたメッキ膜と被メッキ母材との密着力の大小は、被メッキ物表面の凹凸による機械的なアンカーリング効果、もしくは被メッキ物とメッキ膜との化学的な相互作用に依存している。
【0007】
例えば、プラスチック、セラミック、ガラス材料といった化学反応性に乏しい材料の表面にメッキを施すためには、研磨等により母材面を粗面化した後に、Pd−Snコロイド溶液中に浸漬させることで表面の凹部にコロイド粒子を固着させ、この付着コロイドを触媒起点としたメッキを行うことで機械的アンカーリング効果に起因した密着性を確保する方法が広く行われている。
一方、Fe等の金属上へのメッキにおいては、開始直後にメッキ膜と被メッキ金属との間に金属結合が形成され、原子層レベルでの合金化が生ずることで強固な密着性が確保されると言われている。
【0008】
一方、メッキ母材として用いられるシリコンウェハ表面は、撥水性を示し、部分的に乾燥状態になり、その表面に化学活性の低いSiO2の自然酸化膜に被覆され不活性化してしまう。このためメッキ膜と化学的な結合を形成させることが困難になる。また、表面加工後のシリコンウェハ表面は撥水性を示し、部分的に乾燥状態になり、面内に不均一な膜が生成されてしまうという問題があった。
【0009】
【特許文献1】
特開平5−143972号公報
【0010】
【発明が解決しようとする課題】
本発明は、非磁性基板への成膜において良好な均質性を有し、かつ厚膜化可能な磁気記録媒体用基板及び記録層を含む磁気記録媒体を提供することを目的とする。
【0011】
【課題を解決するための手段】
本発明者らは、非磁性基板への均質性を有した厚膜化可能な磁気記録媒体用基板及び軟磁性層、記録層を含む磁気記録媒体について鋭意研究を重ねた結果、上記目的を達成するためには、非磁性基板と該非磁性基板上の下地メッキ層とを含む磁気記録媒体用基板であって、該非磁性基板表面が親水性処理をされたものであることが有効なことを見出した。この親水性処理は、好ましくは、アルコール処理または過酸化水素水処理であることを見出した。さらに上記磁気記録媒体用基板と軟磁性層と記録層とを含む磁気記録媒体は、垂直磁気記録媒体として好適であることを見出した。
【0012】
【発明の実施の形態】
非磁性基板上への成膜を行うに先立ち、非磁性基板上に下地メッキ層を形成し高密着性材料とすることで、基板表面の下地メッキ層の不要な粗面化や種々の活性化処理を施すこと無く良好な密着性を有する軟磁性膜を得ることが可能となる。加えて、本発明は、湿式の無電解置換メッキにより実施できるため、蒸着法等による下地膜の導入に比べてプロセスが大変簡便であり生産性に優れている。さらに成膜後の下地メッキ膜の表面活性が高いため、特段の活性化を行わなくとも連続的にメッキ成膜も可能であり、下地膜として極めて優れた特性を有する。
【0014】
本発明の非磁性基板としては、特に好ましくは、CZ(チョコラルスキー)法或いはFZ(フローティングゾーン)法により製造されたSi単結晶材である。基板の面方位は、(100)、(110)、(111)を初めとして任意のものを用いればよい。また、基板中の不純物としては、0〜1022atoms/cm2の合計量の範囲のB、P、N、As、Sn等の元素を含有しても良い。但し、基板の同一平面において面方位の異なる多結晶Si、及び極度に不純物の偏析のあるSiを基板として用いた場合には、その化学反応性の違いにより形成される下地メッキ層が不均一となってしまう場合がある。さらに、極端な偏析のある基板を使用した場合には、下地メッキ層成膜中に基板表面の偏析部位に局部電池が形成されてしまうことで、本発明に記載した下地メッキ層構造の達成が不能となることもある。
【0015】
本発明においては、このようなSi基板等の非磁性基板の表面酸化膜及び基板表面を僅かにエッチングすることで、下地メッキ層形成に必要な活性化を行うことができる。本発明では、好ましくは濃度2〜60重量%苛性ソーダ等のアルカリ水溶液中でエッチングし、表面の酸化膜除去を行うと共に基板表面を僅かに腐食させることが好ましい。この際活性化を与えるのに好ましい母材のエッチング速度は20nm/分〜5μm/分であり、エッチング量としては40nm以上の母材Siを除去するのが好ましい。エッチング時の液温は濃度、処理時間により異なるが作業性の点で30〜100℃の範囲が好ましい。
【0016】
本発明によれば、エッチング後の非磁性基板に、親水性処理を行なう。親水性処理は、好ましくは、アルコール又は過酸化水素水を用いて行なわれる。
アルコールとしては、エチレングリコール、エタノール、イソプロピルアルコール等が好適に用いられ、過酸化水素水としては、1〜20重量%水溶液が好適に用いられる。過酸化水素水とアンモニア水を組み合わせてpH9〜12の範囲したものも好ましい。
親水性処理は、アルコール又は過酸化水素水等に、エッチング後の非磁性基板を浸漬すること等によって行なうことができる。好ましい親水性処理の時間と温度は、処理枚数、処理浴の容量等により異なるが、30秒〜10分で、15〜80℃、更に好ましくは20〜40℃である。
親水性処理された非磁性基板は、その上に形成される下地メッキ層に対して密着性を高め、非磁性基板への成膜において良好な均質性を与える。これは、親水性処理により下地メッキ層形成時、メッキ浴浴液が非磁性基板最表面まで全面にわたって行き渡り、またメッキ浴浴液の循環が良好に行われるためと考えられる。
【0017】
このようなエッチング処理、親水性処理を行った後に、Ag、Co、Cu、Ni、Pd、およびPtとからなる一群から選ばれる一以上の金属イオン或いはこれらを主な金属イオンとして元素成分で0.01N以上、好ましくは0.05〜0.3N含有するメッキ液に浸漬し表面層を形成することで高密着性メッキ材料を得る。この下地メッキ層の厚さは、10〜1000nmが好ましく、更に好ましくは、50〜500nmである。10nmより小さいと、金属多結晶の粒個々の均一な層内での分布が得られず、1000nmを超えると個々の結晶粒が肥大化してしまい下地膜として好ましくない場合がある。
【0018】
膜形成は、一般に無電解置換メッキとして知られる方法にて成膜を行うことが好ましい。液中に還元剤となりうるジア燐酸、ジア塩素酸等の成分を含有しないのは従来の置換めっき同様であるが、本発明では、特に好ましくは光沢材となるサッカリン等の成分を含有しない硫酸塩溶を用いることができる。硫酸塩としては、硫酸ニッケル、硫酸銅等が挙げられ、好ましい濃度は、0.01〜0.5Nである。塩酸塩溶或いは0.05N以上の塩素イオンを含有する浴では、本発明の下地メッキ層を得ることが困難であるのみならず、Si基板へのメッキ自体が不能となる場合もあり好ましくない。また、液中にK、Ca、Na等の各元素が0.003N以上存在する場合も本発明を履行する上で好ましくない。したがって、塩素イオンを0.05N未満、液中にK、Ca、Na等がそれぞれ0.003N未満含有しているものとする。
【0019】
本発明のメッキ条件としては、液温70〜100℃おいて、浴のpHを7.2〜12.8の範囲に、さらに好ましくは7.6〜8.4にする。メッキ液温が70℃未満の場合はメッキが不能であり、また、メッキ液温が100℃を超えるかメッキ時の温度におけるpHが上記範囲以外にある場合にはメッキ自体は可能であるものの本発明に記載の下地メッキ膜を得ることはできない場合がある。pH調整は、アンモニアの添加で行うことが好ましい。苛性ソーダを初めとする水酸化物によりpH調整を行った場合、pHを上記の範囲にしても本発明の履行は困難である。この理由については必ずしも明らかではないが、液中の金属イオンがアンモニア等の錯体形成剤により錯イオン化することが極めて重要であると考えられる。
アンモニア添加量は初期pHにより適宜調整すれば良いが、概ねメッキ浴中に0.02N〜0.5N好ましくは0.05N〜0.2Nの範囲で添加するとよい。
以上のエッチング処理及び下地メッキ処理を併用することで下地メッキ層の成膜が可能となる。
【0020】
本発明の下地メッキ層の上には、軟磁性層を形成することができる。軟磁性層として、特に限定されず、公知のものが使用でき、例えば、パーマロイ(Fe80Ni20)である。
軟磁性層の形成方法も特に限定されず公知の方法が使用でき、例えば、スパッタ法を用いればよい。
軟磁性層の厚みは、それらの厚さは、用途や使用条件等により変動し、例えば、100〜1000nmであり、好ましくは100〜500nmである。
【0021】
本発明の磁気記録媒体は、好ましくは垂直磁気記録媒体である。本発明の磁気記録媒体は、基板と下地メッキ層と軟磁性層を含んでなる。軟磁性層は、一層であっても複数の膜から構成される多層体であってもよい。
本発明の垂直磁気記録方式ハードディスク媒体の例を図1に示す。Si基板1と下地メッキ層2と軟磁性層3を含む本発明の磁気記録媒体用基板は、軟磁性層2の上に記録層4を設けて磁気記録媒体とすることができる。また、記録膜の上には、保護層5、潤滑層6を順次設けてもよい。これらの層は、スパッタ等の公知の方法を用いて形成できる。
記録層としては、Co記録層等が挙げられ、保護層としては、カーボン保護層等が挙げられ、潤滑層としては、フッ素系潤滑層等が挙げられる。すなわち、記録層、保護層及び潤滑層は、公知のものを使用できる。それらの厚さは、用途や使用条件等により変動する。
本発明によれば、基板の片面に軟磁性層、記録層を設けてもよく、又は基板の両面に軟磁性層、記録層を設けてもよい。
【0022】
【実施例】
以下、本発明を実施例に基づき説明するが、本発明はこれに限定されるものではない。
実施例1
CZ法で製作した直径200mmのSi単結晶基板から、コア抜き・芯取り・ラップを行い、直径65mmの(100)Si単結晶(PドープのN型基板)を得た後、平均粒径15nmのコロイダルシリカにより両面研磨し、表面粗さ(Rms)4nmを得た。Rmsは平方平均粗さであり、AFM(原子間力顕微鏡)を用いて測定した。この基板を45℃、10重量%の苛性ソーダ水溶液に3分間浸漬して基板表面の薄い表面酸化膜を除去すると共に表面のSiエッチング処理を行い、続いてエチレングリコール溶液に浸漬した。
次に、0.1Nの硫酸ニッケル水溶液に硫酸アンモニウムを0.5N添加した下地メッキ浴を製作し、さらにアンモニア水を添加することで液のpHを9.8まであげた。この液を80℃まで加温し再度pHを測定した所pHの値が7.6となった。80℃でのpHが8.0となる様にアンモニア水を連続的に供給しつつ(アンモニアは全体量で0.1Nであった)、先にエッチングを行ったSi基板を下地メッキ浴に5分間浸漬して下地メッキ層を得た。
この材料の膜を蛍光X線分析、透過電子顕微鏡にて調べたところ、200nm±10nmで均質な下地メッキ層であることが確認された。
【0023】
実施例2
実施例1と同様にして得たSi基板を50℃、45重量%の苛性ソーダ水溶液に2分間浸漬して基板表面の薄い表面酸化膜を除去すると共に表面のSiのエッチング処理を行い、続いてアンモニア水にてpH9.5にした過酸化水素溶液に浸漬した。次に、0.2Nの硫酸銅水溶液に硫酸アンモニウム水溶液0.2Nを添加した下地メッキ溶を製作しアンモニア水を添加することで液のpHを8.3まであげた。この液を80℃まで加温し再度pHを測定した所pHの値が6.9となった。80℃でのpHが8.0となる様にアンモニア水を連続的に供給しつつ(アンモニアは全体量で0.2Nであった。)、先にエッチングを行ったSi基板を下地メッキ浴に7分間浸漬してメッキ下地膜を得た。
この材料の膜を蛍光X線分析、透過電子顕微鏡にて調べたところ、150nm±6nmで均質な下地メッキ層であることが確認された。
【0024】
【発明の効果】
表面が親水性処理された非磁性基板は、この基板上への成膜において良好な均質性を有する。このため、厚膜化可能な磁気記録媒体用基板を提供できる。
【図面の簡単な説明】
【図1】本発明の磁気記録媒体の例を示す。
【符号の説明】
1 Si基板
2 下地メッキ層
3 軟磁性層
4 記録層
5 保護層
6 潤滑層
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a magnetic recording medium substrate and a magnetic recording medium including a recording layer.
[0002]
[Prior art]
In the field of magnetic recording, information recording by a hard disk device is essential as a primary external recording device for computers such as personal computers. As the recording density of hard disk drives increases, perpendicular magnetic recording systems capable of higher density recording are being developed instead of the conventional in-plane magnetic recording system.
[0003]
In perpendicular magnetic recording, the magnetic field from adjacent bits is the same as the magnetization direction, and a closed magnetic path is formed between adjacent bits, and self-demagnetizing field (hereinafter referred to as demagnetizing field) due to its own magnetization compared to horizontal magnetic recording. .) Is small, and the magnetization state is stable.
In terms of magnetic film thickness, it is not necessary to reduce the thickness in perpendicular magnetic recording as the recording density increases. From these points, perpendicular magnetic recording reduces demagnetization and K u V (K u is anisotropic energy, In particular, in the case of magnetic recording, it represents the magnetocrystalline anisotropy energy, and V represents the unit recording bit volume.), The stability against magnetization due to thermal fluctuation is large, and the recording limit is greatly expanded first. It can be said that it is a recording method that can do things. As the recording medium, the affinity with the horizontal recording medium is high, and writing and reading of magnetic recording can basically use the same techniques as those conventionally used.
[0004]
In a perpendicular magnetic recording medium, a soft magnetic backing layer (typically permalloy or the like) on a substrate, a recording film (a CoCr-based alloy, a multilayer film in which several PtCo layers and Pd and Co ultrathin films are alternately stacked, SmCo Amorphous film or the like is a candidate material), a protective film, a lubricating film, or the like. The backing layer in the perpendicular magnetic recording medium is soft magnetic and needs to have a thickness of about 100 nm to 500 nm. The soft magnetic underlayer serves as a path for magnetic flux from the upper recording film and also as a path for magnetic flux for writing from the recording head. Therefore, it plays the same role as the iron yoke in the permanent magnet magnetic circuit and needs to be thick.
[0005]
Compared to forming a nonmagnetic Cr-based underlayer on a horizontal recording medium, it is not easy to form a soft magnetic underlayer on a vertical recording medium. Normally, all the constituent films of the horizontal recording medium are formed by a dry process (mainly magnetron sputtering) (Patent Document 1). Various studies have been made on perpendicular recording media by film formation by a dry process. However, the film formation by the dry process has big problems in terms of mass productivity and productivity because of process stability, complicated setting of various parameters, and low film formation speed. In order to increase the density, it is necessary to reduce the flying height of the magnetic head that floats on the surface of the magnetic disk as much as possible. In the manufacture of perpendicular magnetic recording media, the thickness can be flattened by polishing. Although it is necessary to coat the metal film, the thick film obtained by the dry process has low adhesion, and it is very difficult to flatten by polishing. Therefore, various attempts have been made to coat a nonmagnetic substrate with a metal film by a plating method that is easy to increase in thickness compared to vacuum deposition.
[0006]
In order to perform plating with good adhesion by wet plating, it is important that a large amount of a substance that can be a catalyst for the reduction of metal ions in the plating solution exists at the base material-plating film junction. is there. Furthermore, the level of adhesion between the formed plating film and the base material to be plated depends on the mechanical anchoring effect caused by the unevenness of the surface of the object to be plated or the chemical interaction between the object to be plated and the plating film. is doing.
[0007]
For example, in order to plate the surface of a material having poor chemical reactivity, such as plastic, ceramic, and glass material, the surface of the base material is roughened by polishing and then immersed in a Pd—Sn colloid solution. A method is widely used in which the colloidal particles are fixed to the recesses of the metal, and plating is performed using the adhering colloid as a catalyst starting point to ensure adhesion due to the mechanical anchoring effect.
On the other hand, in plating on a metal such as Fe, a metal bond is formed between the plating film and the metal to be plated immediately after the start, and strong adhesion is ensured by alloying at the atomic layer level. It is said that.
[0008]
On the other hand, the surface of a silicon wafer used as a plating base material exhibits water repellency, partially becomes dry, and is inactivated by being covered with a natural oxide film of SiO 2 having low chemical activity on the surface. For this reason, it becomes difficult to form a chemical bond with the plating film. Further, the surface of the silicon wafer after the surface processing exhibits water repellency, partially becomes dry, and there is a problem that a non-uniform film is generated in the surface.
[0009]
[Patent Document 1]
JP-A-5-143972 [0010]
[Problems to be solved by the invention]
It is an object of the present invention to provide a magnetic recording medium including a magnetic recording medium substrate and a recording layer that have good homogeneity in film formation on a nonmagnetic substrate and can be made thick.
[0011]
[Means for Solving the Problems]
As a result of earnest research on the magnetic recording medium substrate, the soft magnetic layer, and the magnetic recording medium including the recording layer, the inventors have achieved the above object. In order to achieve this, it has been found that it is effective to provide a magnetic recording medium substrate including a nonmagnetic substrate and a base plating layer on the nonmagnetic substrate, wherein the surface of the nonmagnetic substrate is subjected to a hydrophilic treatment. It was. It has been found that this hydrophilic treatment is preferably an alcohol treatment or a hydrogen peroxide treatment. Furthermore, it has been found that a magnetic recording medium including the magnetic recording medium substrate, the soft magnetic layer, and the recording layer is suitable as a perpendicular magnetic recording medium.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Prior to film formation on a non-magnetic substrate, an underlying plating layer is formed on the non-magnetic substrate to form a highly adhesive material, thereby making the underlying plating layer on the substrate surface unnecessary roughening and various activations. It is possible to obtain a soft magnetic film having good adhesion without performing the treatment. In addition, since the present invention can be carried out by wet electroless displacement plating, the process is very simple and productivity is superior to the introduction of a base film by vapor deposition or the like. Furthermore, since the surface activity of the underlying plating film after film formation is high, it is possible to continuously form a plating film without special activation, and it has extremely excellent characteristics as an underlying film.
[0014]
The nonmagnetic substrate of the present invention is particularly preferably a Si single crystal material produced by the CZ (chocolate ski) method or the FZ (floating zone) method. Any plane orientation of the substrate may be used, including (100), (110), and (111). Further, the impurities in the substrate may contain elements such as B, P, N, As, and Sn in the total amount range of 0 to 10 22 atoms / cm 2 . However, when polycrystalline Si having different plane orientations on the same plane of the substrate and Si having extremely segregated impurities are used as the substrate, the underlying plating layer formed due to the difference in chemical reactivity is not uniform. It may become. Furthermore, when a substrate with extreme segregation is used, a local battery is formed at the segregation site on the surface of the substrate during the formation of the base plating layer, thereby achieving the base plating layer structure described in the present invention. It may be impossible.
[0015]
In the present invention, the surface oxide film of the non-magnetic substrate such as the Si substrate and the substrate surface are slightly etched so that the activation necessary for forming the base plating layer can be performed. In the present invention, it is preferable to etch in an alkaline aqueous solution such as caustic soda having a concentration of 2 to 60% by weight to remove the oxide film on the surface and to slightly corrode the substrate surface. At this time, a preferable etching rate of the base material for giving activation is 20 nm / min to 5 μm / min, and it is preferable to remove the base material Si having an etching amount of 40 nm or more. The liquid temperature during etching varies depending on the concentration and processing time, but is preferably in the range of 30 to 100 ° C. in terms of workability.
[0016]
According to the present invention, the non-magnetic substrate after etching is subjected to hydrophilic treatment. The hydrophilic treatment is preferably performed using alcohol or hydrogen peroxide solution.
As the alcohol, ethylene glycol, ethanol, isopropyl alcohol and the like are preferably used, and as the hydrogen peroxide solution, a 1 to 20% by weight aqueous solution is preferably used. A combination of hydrogen peroxide water and ammonia water having a pH range of 9-12 is also preferred.
The hydrophilic treatment can be performed by immersing the non-magnetic substrate after etching in alcohol or hydrogen peroxide solution. The preferred hydrophilic treatment time and temperature vary depending on the number of treatments, the volume of the treatment bath, etc., but are 15 to 80 ° C., more preferably 20 to 40 ° C. in 30 seconds to 10 minutes.
The non-magnetic substrate that has been subjected to hydrophilic treatment improves adhesion to the underlying plating layer formed thereon, and provides good homogeneity in film formation on the non-magnetic substrate. This is presumably because the plating bath solution spreads over the entire surface of the nonmagnetic substrate when the base plating layer is formed by the hydrophilic treatment, and the plating bath solution is circulated well.
[0017]
After performing such etching treatment and hydrophilic treatment, one or more metal ions selected from the group consisting of Ag, Co, Cu, Ni, Pd, and Pt, or 0 as an element component with these as main metal ions. A high adhesion plating material is obtained by immersing in a plating solution containing 0.01 N or more, preferably 0.05 to 0.3 N to form a surface layer. The thickness of the base plating layer is preferably 10 to 1000 nm, and more preferably 50 to 500 nm. If the thickness is smaller than 10 nm, the distribution of the individual metal polycrystal grains in a uniform layer cannot be obtained. If the thickness exceeds 1000 nm, the individual crystal grains are enlarged, which is not preferable as a base film.
[0018]
The film formation is preferably performed by a method generally known as electroless displacement plating. It is the same as conventional displacement plating that it does not contain components such as diphosphoric acid and dichloric acid that can be a reducing agent in the solution, but in the present invention, it is particularly preferably a sulfate that does not contain components such as saccharin that becomes a brightener. Melt can be used. Examples of the sulfate include nickel sulfate and copper sulfate, and a preferred concentration is 0.01 to 0.5N. In a bath containing hydrochloride or containing 0.05N or more of chlorine ions, it is not only difficult to obtain the underlying plating layer of the present invention, but it is also not preferable because plating on the Si substrate itself may be impossible. Moreover, when each element, such as K, Ca, Na, etc. exists in a liquid 0.003N or more, it is unpreferable when implementing this invention. Therefore, it is assumed that chlorine ions are contained in less than 0.05N, and K, Ca, Na, etc. are contained in the solution in less than 0.003N.
[0019]
As the plating conditions of the present invention, the bath temperature is set in the range of 7.2 to 12.8, more preferably 7.6 to 8.4 at a liquid temperature of 70 to 100 ° C. If the plating solution temperature is less than 70 ° C., plating is impossible, and if the plating solution temperature exceeds 100 ° C. or the pH at the time of plating is outside the above range, the plating itself is possible. In some cases, the base plating film described in the invention cannot be obtained. The pH adjustment is preferably performed by adding ammonia. When the pH is adjusted with a hydroxide such as caustic soda, it is difficult to implement the present invention even if the pH is in the above range. Although the reason for this is not necessarily clear, it is considered extremely important that the metal ions in the liquid are complex ionized by a complex-forming agent such as ammonia.
The amount of ammonia added may be appropriately adjusted depending on the initial pH, but is generally added in the range of 0.02 N to 0.5 N, preferably 0.05 N to 0.2 N in the plating bath.
By using the etching process and the base plating process together, the base plating layer can be formed.
[0020]
A soft magnetic layer can be formed on the underlying plating layer of the present invention. The soft magnetic layer is not particularly limited, and a known one can be used, for example, permalloy (Fe 80 Ni 20 ).
A method for forming the soft magnetic layer is not particularly limited, and a known method can be used. For example, a sputtering method may be used.
The thickness of the soft magnetic layer varies depending on the use and use conditions, and is, for example, 100 to 1000 nm, preferably 100 to 500 nm.
[0021]
The magnetic recording medium of the present invention is preferably a perpendicular magnetic recording medium. The magnetic recording medium of the present invention comprises a substrate, a base plating layer, and a soft magnetic layer. The soft magnetic layer may be a single layer or a multilayer body composed of a plurality of films.
An example of a perpendicular magnetic recording type hard disk medium of the present invention is shown in FIG. The magnetic recording medium substrate of the present invention including the Si substrate 1, the base plating layer 2, and the soft magnetic layer 3 can be provided with a recording layer 4 on the soft magnetic layer 2 to form a magnetic recording medium. In addition, a protective layer 5 and a lubricating layer 6 may be sequentially provided on the recording film. These layers can be formed using a known method such as sputtering.
Examples of the recording layer include a Co recording layer, examples of the protective layer include a carbon protective layer, and examples of the lubricating layer include a fluorine-based lubricating layer. That is, known recording layers, protective layers, and lubricating layers can be used. Their thickness varies depending on the application and use conditions.
According to the present invention, a soft magnetic layer and a recording layer may be provided on one side of the substrate, or a soft magnetic layer and a recording layer may be provided on both sides of the substrate.
[0022]
【Example】
EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, this invention is not limited to this.
Example 1
Core removal, centering, and lapping were performed from a 200 mm diameter Si single crystal substrate manufactured by the CZ method to obtain a (100) Si single crystal (P-doped N-type substrate) with a diameter of 65 mm, and then an average particle size of 15 nm. Both surfaces were polished with colloidal silica to obtain a surface roughness (Rms) of 4 nm. Rms is the mean square roughness, measured using an AFM (Atomic Force Microscope). This substrate was immersed in a 10% by weight aqueous caustic soda solution at 45 ° C. for 3 minutes to remove the thin surface oxide film on the surface of the substrate and subjected to Si etching treatment on the surface, and then immersed in an ethylene glycol solution.
Next, a base plating bath was prepared by adding 0.5 N ammonium sulfate to a 0.1 N nickel sulfate aqueous solution, and the pH of the solution was raised to 9.8 by adding ammonia water. When this solution was heated to 80 ° C. and pH was measured again, the pH value was 7.6. While supplying ammonia water continuously so that the pH at 80 ° C. becomes 8.0 (ammonia was 0.1 N in total amount), the previously etched Si substrate was used as a base plating bath. A base plating layer was obtained by dipping for a minute.
When the film of this material was examined with a fluorescent X-ray analysis and a transmission electron microscope, it was confirmed that the film was a homogeneous undercoat layer at 200 nm ± 10 nm.
[0023]
Example 2
The Si substrate obtained in the same manner as in Example 1 was immersed in a 45% by weight aqueous solution of caustic soda at 50 ° C. for 2 minutes to remove the thin surface oxide film on the surface of the substrate and to etch the surface Si, followed by ammonia. It was immersed in a hydrogen peroxide solution adjusted to pH 9.5 with water. Next, a base plating solution was prepared by adding 0.2N ammonium sulfate aqueous solution to 0.2N copper sulfate aqueous solution, and the pH of the solution was raised to 8.3 by adding ammonia water. When this solution was heated to 80 ° C. and pH was measured again, the pH value was 6.9. While supplying ammonia water continuously so that the pH at 80 ° C. becomes 8.0 (ammonia was 0.2 N in total), the previously etched Si substrate was used as a base plating bath. It was immersed for 7 minutes to obtain a plating base film.
When the film of this material was examined with a fluorescent X-ray analysis and a transmission electron microscope, it was confirmed that the film was a homogeneous base plating layer at 150 nm ± 6 nm.
[0024]
【The invention's effect】
A non-magnetic substrate whose surface has been subjected to hydrophilic treatment has good homogeneity in film formation on the substrate. Therefore, it is possible to provide a magnetic recording medium substrate that can be thickened.
[Brief description of the drawings]
FIG. 1 shows an example of a magnetic recording medium of the present invention.
[Explanation of symbols]
1 Si substrate 2 Underlying plating layer 3 Soft magnetic layer 4 Recording layer 5 Protective layer 6 Lubricating layer

Claims (5)

非磁性基板であるSi基板と、該Si基板上の下地メッキ層とを含んでなる磁気記録媒体用基板の製造方法であって、Si基板の表面をアルカリ水溶液中でエッチング処理を行い、エッチング処理後のSi基板の表面を親水性処理した後、無電解置換メッキにて下地メッキ層を形成する磁気記録媒体用基板の製造方法A method for manufacturing a substrate for a magnetic recording medium comprising a Si substrate that is a nonmagnetic substrate and a base plating layer on the Si substrate, wherein the surface of the Si substrate is etched in an alkaline aqueous solution, and the etching treatment is performed. A method for manufacturing a substrate for a magnetic recording medium, wherein the surface of a subsequent Si substrate is subjected to hydrophilic treatment, and then a base plating layer is formed by electroless displacement plating . 上記親水性処理が、アルコール処理又は過酸化水素水処理である請求項1に記載の磁気記録媒体用基板の製造方法The method for producing a magnetic recording medium substrate according to claim 1, wherein the hydrophilic treatment is an alcohol treatment or a hydrogen peroxide solution treatment. 上記無電解置換メッキが、アンモニアを添加してpH7.2〜12.8の範囲で行われる請求項1又は請求項2に記載の磁気記録媒体用基板の製造方法The electroless substitution plating method of producing a substrate for a magnetic recording medium according to claim 1 or claim 2 ammonia was added Ru place in the range of PH7.2~12.8. 上記下地メッキ層の上に、更に軟磁性層を形成する請求項1〜3のいずれかに記載の磁気記録媒体用基板の製造方法 The method for manufacturing a magnetic recording medium substrate according to claim 1, further comprising forming a soft magnetic layer on the base plating layer . 請求項4に記載の製造方法を用いて得られた磁気記録媒体用基板に記録層を形成する磁気記録媒体の製造方法 A method for manufacturing a magnetic recording medium, wherein a recording layer is formed on a magnetic recording medium substrate obtained by using the manufacturing method according to claim 4 .
JP2003194783A 2003-07-10 2003-07-10 Substrate for magnetic recording medium and method for manufacturing magnetic recording medium Expired - Fee Related JP4023609B2 (en)

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JP2003194783A JP4023609B2 (en) 2003-07-10 2003-07-10 Substrate for magnetic recording medium and method for manufacturing magnetic recording medium
SG200404371A SG109001A1 (en) 2003-07-10 2004-07-07 Substrate for magnetic recording medium
US10/886,119 US20050008900A1 (en) 2003-07-10 2004-07-07 Substrate for magnetic recording medium
KR1020040053260A KR20050007170A (en) 2003-07-10 2004-07-09 Substrate for Magnetic Recording Medium
CNA2004100698081A CN1577508A (en) 2003-07-10 2004-07-09 Substrate for magnetic recording medium

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