JP4030360B2 - Electrostatic adsorption apparatus and vacuum processing apparatus using the same - Google Patents

Description

【００５０】
表１に示すように、結果は素ガラスである基板▲１▼の吸着力が一番強く、次いでデバイスパターンを形成した基板▲３▼の順、そして、全面にＩＴＯ膜が形成された基板▲２▼が一番弱いことがわかった。
【００５１】
この理由は、ＩＴＯ膜付きの基板▲２▼では、ＩＴＯ膜と吸着電極との間でコンデンサーが作られ、均一な電場が形成されるためにグラディエント力（ｆ∝ｇｒａｄＥ²）が作用しなくなるためと考えられる。
【００５２】
また、基板▲２▼において２．４ｇｆ／ｃｍ²の吸着力が得られているのは、コンデンサー電極間のクーロン力が働いているためだと思われる。
【００５３】
一方、デバイス基板である基板▲３▼では、デバイス部分では基板▲２▼（ＩＴＯ基板）と同様にグラディエント力が作用しない（コンデンサーが形成され、電極間のクーロン力が作用する）が、デバイスパターンとデバイスパターンの間は素ガラスとなっており、この部分ではグラディエント力が作用しているために、８.１ｇｆ／ｃｍ²の吸着力が得られているものと考えられる。
【００５４】
上記試験の後、基板▲３▼のデバイス特性を調べたところ、静電吸着装置と接した部分は８０％（２５個中２０個）のデバイスがゲートの絶縁破壊を起こしていた。また、残り３個はゲートのしきい電圧が高くなっていた。これは、グラディエント力を発現させるための電場が強すぎるためであると考えられる。
【００５５】
静電吸着とデバイス破壊の関係をさらに詳しく調べる目的で、従来の半導体基板用静電吸着装置で吸着力を測定した。
【００５６】
この場合、静電チャックの構造は、電極幅は８ｍｍ、電極間隔は２ｍｍ、誘電層は厚さ２００μｍのポリイミドを用いた。上記同様に印加電圧Ｖｅｓｃ＝±２ｋＶの条件で吸着力を測定した。その結果を表２に示す。
【００５７】
【表２】

【００５８】
また、このときは基板▲３▼について絶縁破壊の有無を調べたが、デバイス全てが正常で、劣化のないことが確認できた。しかしながら、吸着力は１．２ｇｆ／ｃｍ²と弱く、実用上の問題がある。
【００５９】
＜実施例１＞
デバイス破壊を起こさず、なおかつ実用的な吸着力を発現する静電吸着装置と得る目的で、図４に示す電極構造のものを製作して評価した。
すなわち、デバイス領域における吸着電極の幅を大きくして、デバイス内の金属部との間でコンデンサーを形成させ、その部分のクーロン力で吸着させる。
【００６０】
さらに、デバイス領域とデバイス領域との間の素ガラス部（非デバイス領域）では、吸着電極を細密化してグラディエント力を向上させる構造とした。
【００６１】
具体的には、デバイス領域において大きさ２５ｍｍ×７．５ｍｍの正負双極の吸着電極を形成し、両者の間隔を１ｍｍとした。この場合には、正負の吸着電極の面積が等しいこと、さらに電極面積の和がデバイスの面積を超えない範囲でなるべく大きくなるようにすることが重要となる。
【００６２】
一方、非デバイス領域では、正負双極の吸着電極の幅をそれぞれ０．５ｍｍとし、また吸着電極の間隔を０．５ｍｍとした。
【００６３】
そして、上記同様に印加電圧Ｖｅｓｃ＝±２ｋＶの条件で吸着力を測定した。その結果を表３に示す。
【００６４】
【表３】

【００６５】
表３に示すように、本実施例においては、１３．１ｇｆ／ｃｍ²と実用上必要とされる１０ｇｆ／ｃｍ²を上回る吸着力が得られた。
【００６６】
さらに、絶縁破壊については、デバイスはすべて異常のないことが確認され、この構造の有効性が実証された。
【００６７】
＜実施例２＞
図７に示すように、デバイス領域に吸着電極を配置せず、非デバイス領域にのみ、上記同様の幅０．５ｍｍ、間隔０．５ｍｍの正負双極の吸着電極を形成し、同様の評価を行った。その結果を表３に示す。
【００６８】
本実施例の場合、Ｖｅｓｃ＝±２ｋＶでは９．２ｇｆ／ｃｍ²となったが、Ｖｅｓｃ＝±２．５ｋＶでは１２．８ｇｆ／ｃｍ²と実施例１と遜色のない吸着力が得られた。
【００６９】
しかも、本実施例においては、デバイス領域に吸着電極が存在しないので、デバイスに対して電場の影響を及ぼすことがない。実際の検査結果でも、デバイスに絶縁破壊は生じていなかった。
【００７０】
【発明の効果】
以上述べたように、本発明によれば、静電吸着時に必要な吸着力を確保する一方で、基板のデバイスパターン等の処理対象領域への影響を最小限に抑えることができる。
【図面の簡単な説明】
【図１】本発明に係る真空処理装置の一実施の形態の概略構成図
【図２】同実施の形態の静電チャックと吸着する基板の要部構成を示す斜視図
【図３】同静電チャックの要部構成を示す平面図
【図４】同静電チャックの電極の構成を示す概略図
【図５】（ａ）：同静電チャックの非デバイス領域における電極部の寸法関係を示す説明図で、図４の一点鎖線で示す部分Ａの拡大図
（ｂ）：同静電チャックのデバイス領域における電極部の寸法関係を示す説明図
【図６】本発明の他の実施の形態における電極の構成を示す平面図
【図７】本発明のさらに他の実施の形態における電極の構成を示す平面図
【符号の説明】
１…真空処理装置 ２…真空槽 ４…静電チャック（静電吸着装置） ５…静電チャックプレート（装置本体） ６、７…吸着電極 ６１、７１…デバイス領域の電極部 ６２、７２…非デバイス領域の電極部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electrostatic attracting apparatus that attracts and holds a substrate with electrostatic force in an apparatus that performs processing such as film formation on the substrate, and more particularly to an electrostatic attracting apparatus that attracts and holds an insulating substrate.
[0002]
[Prior art]
In general, in a semiconductor process, for example, an electrostatic chuck (electrostatic chuck) is used as means for controlling the temperature of a substrate.
[0003]
In recent years, an electrostatic chucking device has been devised that sucks not only a semiconductor substrate such as a silicon wafer but also an insulating substrate.
In the case of such an electrostatic adsorption device, the adsorption force of the substrate can increase the gradient force by forming an adsorption electrode with a fine pattern, but it is necessary to increase the electric field gradient in order to increase the gradient force. is there.
[0004]
[Problems to be solved by the invention]
However, in an insulating substrate in which a device pattern is not formed in this way, for example, bare glass, there is no problem in increasing the electric field, but an electric field is not applied to a substrate on which a device pattern such as a fine MOS is formed. It has been found that if the gradient is increased more than necessary, problems such as gate dielectric breakdown and changes in the gate voltage threshold occur.
[0005]
On the other hand, if the electric field is weakened, even if dielectric breakdown or the like can be avoided, the essential attraction force becomes weak, causing a problem that it cannot be put to practical use.
[0006]
It is an object of the present invention to provide an electrostatic attraction apparatus that can exert an effective attracting force without affecting a processing target region such as a device pattern on a substrate and a vacuum processing apparatus using the same. Objective.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, an invention according to claim 1 is an electrostatic adsorption device having an apparatus main body in which a plurality of adsorption electrodes are provided in a dielectric, wherein the adsorption region of the apparatus main body is an adsorption A device region corresponding to a region where a device pattern of an object is formed, and a non-device region corresponding to a region where a device pattern of the adsorption target is not formed, the device region and the non-device region; The electric field gradient in the device region of the adsorption electrode is made smaller than the electric field gradient in the non-device region by differentiating the dense and dense structure of the adsorption electrode in the device body. Device regions are arranged in pairs in a row.
A second aspect of the present invention is the method according to the first aspect , wherein no adsorption electrode is provided in the device region.
Invention of Claim 3 is equipped with a vacuum vessel and the electrostatic attraction apparatus in any one of Claim 1 or 2 provided in the said vacuum vessel, The process target adsorbed by the said electrostatic adsorption device A vacuum processing apparatus configured to perform predetermined processing on an object.
[0008]
In the present invention, since the adsorption electrode is configured so that the density structure of the adsorption electrode is different depending on the configuration of the adsorption object in the device region and the non-device region , various types of adsorption electrodes are formed. The electric field gradient can be changed in accordance with the device pattern, whereby the influence on the device pattern during electrostatic adsorption can be minimized.
[0009]
The electric field gradient in the device region of the intake Chakudenkyoku is, by Rukoto be configured to be smaller than the electric field gradient in the non-device region, while ensuring a suction force required, the effect of the device pattern of the adsorption object Can be minimized.
[0010]
In the case of the present invention, the width of the electrode portion in the device region of the adsorption electrode is made larger than the width of the electrode portion in the non-device region, or the interval between the electrode portions in the device region of the adsorption electrode is the electrode portion in the non-device region If it is made larger than this space | interval, an adsorption | suction electrode can be easily comprised so that a rough structure may differ according to the structure of a adsorption | suction target object.
[0011]
Furthermore, in the present invention, if the adsorption electrode is not provided in the device region, an electrostatic adsorption apparatus that does not affect the device pattern of the adsorption object at the time of adsorption can be obtained.
[0012]
Thus, according to the present invention, there is provided a vacuum processing apparatus capable of performing effective processing without exerting an influence on a processing target region such as a device pattern and exhibiting an effective adsorption force. can do.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of an electrostatic adsorption device according to the present invention will be described in detail with reference to the drawings.
FIG. 1 is a diagram showing a schematic configuration of an embodiment of a vacuum processing apparatus according to the present invention.
As shown in FIG. 1, the vacuum processing apparatus 1 of this Embodiment has the vacuum processing tank 2 connected to the vacuum exhaust system which is not shown in figure.
[0014]
A susceptor 3 is provided in the lower part of the vacuum processing tank 2, and an electrostatic chuck (electrostatic chucking device) 4 for sucking and holding a substrate (sucking target) 10 to be described later is provided on the susceptor 3. It is fixed.
[0015]
The electrostatic chuck 4 has an electrostatic chuck plate (device main body) 5 formed in a predetermined shape using, for example, a ceramic material that is a dielectric, and a pair of later-described electrostatic chuck plates 5 is disposed inside the electrostatic chuck plate 5. Bipolar adsorption electrodes 6 and 7 are provided.
[0016]
Here, the suction electrodes 6 and 7 are connected to a connection terminal (not shown) of the electrostatic chuck power supply 8 disposed outside the vacuum processing tank 2.
[0017]
FIG. 2 is a perspective view showing the main part configuration of the electrostatic chuck and the substrate to be attracted according to the present embodiment, FIG. 3 is a plan view showing the main part configuration of the electrostatic chuck, and FIG. It is the schematic which shows the structure of this electrode.
[0018]
FIG. 5A is an explanatory diagram showing the dimensional relationship of the electrode portions in the non-device region of the electrostatic chuck, and is an enlarged view of a portion A indicated by a one-dot chain line in FIG. 4, and FIG. It is explanatory drawing which shows the dimensional relationship of the electrode part in the device area | region of the electrostatic chuck.
[0019]
As shown in FIG. 2, the electrostatic chuck 4 of the present embodiment is for attracting a substrate 10 on which a plurality of device patterns (processing target regions) 12 are formed on a glass substrate 11, for example. The electric chuck plate 5 has the same shape as the substrate 10 and is slightly larger than the substrate 10.
[0020]
As shown in FIGS. 2 and 3, the electrostatic chuck plate 5 of the electrostatic chuck 4 includes a region 51 (hereinafter referred to as “device region”) corresponding to the device pattern 12 of the substrate 10 and a device pattern 12 of the substrate 10. Are divided into regions (hereinafter referred to as “non-device regions”) 52 corresponding to regions in which no is formed.
[0021]
As shown in FIG. 4, in the present embodiment, the density structures of the attracting electrodes 6 and 7 in the device region 51 and the non-device region 52 of the electrostatic chuck plate 5 are different, whereby the electric field in the device region 51 is different. The gradient is configured to be smaller than the electric field gradient in the non-device region 52.
[0022]
In this case, the suction electrodes 6 and 7 are connected to each other in the device region 51 and the non-device region 52, and the width W of the electrode portions 61 and 71 of the suction electrodes 6 and 7 in the device region 51 is the same in the non-device region 52. The electrode portions 62 and 72 are formed to be larger than the width w.
[0023]
In the case of the present invention, the width W of the electrode portions 61 and 71 of the adsorption electrodes 6 and 7 in the device region 51 is not particularly limited. However, from the viewpoint of avoiding the influence on the device pattern 12 of the substrate 10, it is 2 mm or more. More preferably, the size is determined so as to be about ½ of the area of the device region 51 by being separated by an interval D between electrode portions 61 and 71 of the adsorption electrodes 6 and 7 described later. Good.
[0024]
Further, the width w of the electrode portions 62 and 72 of the suction electrodes 6 and 7 in the non-device region 52 is not particularly limited, but is preferably 1 mm or less from the viewpoint of securing the suction force. Is 0.1 to 0.5 mm.
[0025]
On the other hand, the shape of the electrode portions 61 and 71 of the adsorption electrodes 6 and 7 in the device region 51 is not particularly limited. However, if the electrode portions 61 and 71 are formed in a rectangular shape as in the example shown in FIG. There is an advantage that it is easy to manufacture.
[0026]
On the other hand, the shape of the electrode portions 62 and 72 of the attracting electrodes 6 and 7 in the non-device region 52 is not particularly limited. However, when formed in a nested shape as in the example shown in FIG. There is a merit that you can.
[0027]
In the present embodiment, the gap D between the electrode portions 61 and 71 of the adsorption electrodes 6 and 7 in the device region 51 is formed to be larger than the gap d between the electrode portions in the non-device region 52.
[0028]
In the present invention, the distance D between the electrode portions 61 and 71 in the device region 51 of the adsorption electrodes 6 and 7 is not particularly limited, but from the viewpoint of avoiding the influence on the device pattern 12 of the substrate 10 from 1 mm. It is preferable to enlarge, More preferably, it is 1-3 mm.
[0029]
On the other hand, the distance d between the electrode portions 62 and 72 of the attracting electrodes 6 and 7 in the non-device region 52 is not particularly limited, but is preferably 1 mm or less from the viewpoint of securing the attracting force. Is 0.1 to 0.3 mm.
[0030]
Further, the total area of the adsorption electrodes 6 and 7 is not particularly limited, but is preferably 70% or more of the total area of the device pattern 12 of the substrate 10 from the viewpoint of securing the adsorption force.
[0031]
In a normal case, a protective layer is formed on the surfaces of the adsorption electrodes 6 and 7. In this case, the thickness of the protective layer is not particularly limited, but is preferably 500 μm or less, more preferably 5 to 100 μm, from the viewpoint of securing adsorption power.
[0032]
As described above, according to the present embodiment, the width W of the electrode portions 61 and 71 in the device region 51 of the adsorption electrodes 6 and 7 is larger than the width w of the electrode portions 62 and 72 in the non-device region 52, and The distance D between the electrode portions 61 and 71 in the device region 51 of the suction electrodes 6 and 7 is configured to be larger than the distance d between the electrode portions 62 and 72 in the non-device region 52, thereby the device region of the suction electrodes 6 and 7. Since the electric field gradient in 51 is smaller than the electric field gradient in the non-device region 52, it is possible to minimize the influence on the device pattern of the substrate while ensuring the necessary adsorption force during electrostatic adsorption.
[0033]
And according to this Embodiment, it is a vacuum processing apparatus which can perform smooth processing by exhibiting effective adsorption power, without affecting the device pattern 12 formed on the substrate 10 Can be provided.
[0034]
FIG. 6 is a plan view showing a configuration of an electrode according to another embodiment of the present invention. In the following, portions corresponding to those of the above embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
[0035]
As shown in FIG. 6, in the case of the present embodiment, in the device region 51 of the electrostatic chuck 4, the electrode portions 61 </ b> A and 71 </ b> A of the attracting electrodes 6 and 7 are formed in a nested shape.
[0036]
In the case of the present embodiment, the width W and the distance D of the electrode portions 61A and 71A of the adsorption electrodes 6 and 7 in the device region 51 are the same conditions as in the above embodiment.
[0037]
Further, the width w and the distance d of the electrode portions 62 and 72 of the adsorption electrodes 6 and 7 in the non-device region 52 are also the same conditions as in the above embodiment.
[0038]
According to the present embodiment having such a configuration, since the electrode portions 61A and 71A of the adsorption electrodes 6 and 7 are formed in a nested shape, the adsorption force due to the presence of the positive and negative adsorption electrodes 6 and 7 is reduced. There is an advantage that the difference or the difference in the residual adsorption force can be averaged. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.
[0039]
FIG. 7 is a plan view showing a configuration of an electrode according to still another embodiment of the present invention. In the following, portions corresponding to those of the above embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.
[0040]
As shown in FIG. 7, in the present embodiment, the adsorption electrodes 6 and 7 are not provided in the device region 51. That is, in the present embodiment, only the dielectric is present in the device region 51.
[0041]
In this case, the width w and the interval d of the electrode portions 62 and 72 of the adsorption electrodes 6 and 7 in the non-device region 52 are the same conditions as in the above embodiment.
[0042]
According to the present embodiment having such a configuration, it is possible to obtain an electrostatic adsorption device that does not affect the device pattern 12 of the substrate 10 at the time of adsorption. Since other configurations and operational effects are the same as those of the above-described embodiment, detailed description thereof is omitted.
[0043]
The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, the electrode portion of each adsorption electrode is connected in the device area and the non-device area, but the present invention is not limited to this, and each adsorption in the device area and the non-device area. It is also possible to apply the voltage independently to the electrode portion of the electrode.
However, in order to achieve a simpler configuration, it is preferable to connect the electrode portions of each adsorption electrode in series in the device region and the non-device region, respectively.
[0044]
Furthermore, the present invention can be applied to substrates on which various device patterns are formed, and the types of substrates can also be applied to various substrates.
[0045]
Furthermore, the present invention can be applied to various vacuum processing apparatuses including a sputtering apparatus and a CVD apparatus.
[0046]
【Example】
Examples of the present invention will be described below in detail together with comparative examples.
The present inventors use a high-purity quartz glass having a size of 15 cm × 20 cm and a thickness of 0.075 cm, and (1) a raw glass plate (as it is), and (2) the entire surface of the raw glass plate. In addition, the adsorption force was measured for a film formed with an ITO film having a thickness of 1000 angstroms, and (3) a pattern equivalent to a liquid crystal projector device on the glass plate (see FIG. 1). The result was obtained.
[0047]
The device size is 18 mm × 24 mm, and 25 devices are evenly arranged in the substrate. In this case, the electrostatic attracting surfaces of the substrates (2) and (3) are the non-film-forming surfaces, that is, the raw glass side as attracting surfaces.
[0048]
As an electrostatic chuck, polyimide having an electrode width of 0.25 mm, an electrode interval of 0.25 mm, and a dielectric layer of 25 μm was used, and when a voltage of Vesc = ± 2 kV was applied, the following adsorption force was obtained.
[0049]
[Table 1]

[0050]
As shown in Table 1, the result is that the substrate (1), which is a glass substrate, has the strongest adsorption power, followed by the substrate (3) on which the device pattern is formed, and then the substrate on which the ITO film is formed on the entire surface (7) 2 ▼ was found to be the weakest.
[0051]
The reason for this is that in the substrate with the ITO film ( ² ), a capacitor is formed between the ITO film and the adsorption electrode, and a uniform electric field is formed, so that the gradient force (f∝gradE ² ) does not act. it is conceivable that.
[0052]
Moreover, it is considered that the adsorption force of 2.4 gf / cm ² is obtained in the substrate (2) because of the Coulomb force between the capacitor electrodes.
[0053]
On the other hand, in the substrate (3) which is the device substrate, the gradient force does not act on the device portion like the substrate (2) (ITO substrate) (a capacitor is formed and the Coulomb force acts between the electrodes), but the device pattern It is considered that an adsorption force of 8.1 gf / cm ² is obtained because a gradient force acts on this portion between the device pattern and the device pattern.
[0054]
After the above test, the device characteristics of the substrate (3) were examined. As a result, 80% (20 out of 25 devices) of the portion in contact with the electrostatic chucking device caused gate dielectric breakdown. The remaining three had high gate threshold voltages. This is considered to be because the electric field for expressing the gradient force is too strong.
[0055]
In order to investigate the relationship between electrostatic adsorption and device destruction in more detail, the adsorption force was measured with a conventional electrostatic adsorption apparatus for semiconductor substrates.
[0056]
In this case, as the structure of the electrostatic chuck, polyimide having an electrode width of 8 mm, an electrode interval of 2 mm, and a dielectric layer of 200 μm was used. In the same manner as described above, the adsorption force was measured under the condition of the applied voltage Vesc = ± 2 kV. The results are shown in Table 2.
[0057]
[Table 2]

[0058]
At this time, the substrate (3) was examined for the presence or absence of dielectric breakdown, and it was confirmed that all the devices were normal and there was no deterioration. However, the adsorptive power is as weak as 1.2 gf / cm ^2, which has a practical problem.
[0059]
<Example 1>
The electrode structure shown in FIG. 4 was manufactured and evaluated for the purpose of obtaining an electrostatic adsorption device that does not cause device destruction and that exhibits a practical adsorption force.
That is, by increasing the width of the adsorption electrode in the device region, a capacitor is formed with the metal part in the device and adsorbed by the Coulomb force of that part.
[0060]
Furthermore, in the raw glass part (non-device region) between the device region and the device region, the adsorption electrode is made fine to improve the gradient force.
[0061]
Specifically, positive and negative bipolar adsorption electrodes having a size of 25 mm × 7.5 mm were formed in the device region, and the distance between them was set to 1 mm. In this case, it is important that the positive and negative adsorption electrodes have the same area, and that the sum of the electrode areas is as large as possible without exceeding the device area.
[0062]
On the other hand, in the non-device region, the width of the positive and negative bipolar adsorption electrodes was 0.5 mm, respectively, and the interval between the adsorption electrodes was 0.5 mm.
[0063]
In the same manner as described above, the adsorption force was measured under the condition of the applied voltage Vesc = ± 2 kV. The results are shown in Table 3.
[0064]
[Table 3]

[0065]
As shown in Table 3, in the present embodiment, the suction force exceeding the 10 gf / cm ^2, which is practically required 13.1gf / cm ² was obtained.
[0066]
Furthermore, with regard to dielectric breakdown, it was confirmed that all devices were normal, and the effectiveness of this structure was demonstrated.
[0067]
<Example 2>
As shown in FIG. 7, the adsorption electrode is not arranged in the device region, but the same positive and negative adsorption electrodes with a width of 0.5 mm and an interval of 0.5 mm are formed only in the non-device region, and the same evaluation is performed. It was. The results are shown in Table 3.
[0068]
In the case of this example, it was 9.2 gf / cm ^{2 at} Vesc = ± ² kV, but 12.8 gf / cm ² at Vesc = ± 2.5 kV, which was an inferior adsorption force as in Example 1.
[0069]
In addition, in this embodiment, since the adsorption electrode does not exist in the device region, the electric field does not affect the device. Even in the actual inspection results, no breakdown occurred in the device.
[0070]
【The invention's effect】
As described above, according to the present invention, it is possible to minimize the influence on a processing target region such as a device pattern on a substrate while securing a necessary suction force during electrostatic suction.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an embodiment of a vacuum processing apparatus according to the present invention. FIG. 2 is a perspective view showing a main configuration of an electrostatic chuck and an adsorbing substrate according to the embodiment. FIG. 4 is a schematic view showing the configuration of the electrode of the electrostatic chuck. FIG. 5A is a diagram showing the dimensional relationship of the electrode portion in the non-device region of the electrostatic chuck. FIG. 6 is an enlarged view of a portion A indicated by a one-dot chain line in FIG. 4 (b): an explanatory view showing a dimensional relationship of electrode portions in a device region of the electrostatic chuck. FIG. 6 in another embodiment of the present invention FIG. 7 is a plan view showing the configuration of an electrode. FIG. 7 is a plan view showing the configuration of an electrode according to still another embodiment of the present invention.
DESCRIPTION OF SYMBOLS 1 ... Vacuum processing apparatus 2 ... Vacuum tank 4 ... Electrostatic chuck (electrostatic adsorption apparatus) 5 ... Electrostatic chuck plate (apparatus main body) 6, 7 ... Adsorption electrode 61, 71 ... Electrode part 62, 72 ... non-device area Device area electrodes

Claims (3)

An electrostatic attraction apparatus having an apparatus main body provided with a plurality of adsorption electrodes in a dielectric,
The suction area of the apparatus main body has a device area corresponding to the area where the device pattern of the suction object is formed, and a non-device area corresponding to the area where the device pattern of the suction object is not formed,
By varying the density structure of the adsorption electrode in the device region and the non-device region, the electric field gradient in the device region of the adsorption electrode is configured to be smaller than the electric field gradient in the non-device region,
An electrostatic attraction apparatus in which the device region and the non-device region are arranged in pairs in the apparatus main body . The electrostatic attraction apparatus according to claim 1 , wherein an adsorption electrode is not provided in the device region. A vacuum chamber;
The electrostatic adsorption apparatus according to claim 1 or 2 provided in the vacuum chamber,
The vacuum processing apparatus comprised so that a predetermined process may be performed with respect to the process target object adsorbed by the said electrostatic adsorption apparatus.

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