JP4035008B2 - Vacuum processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vacuum processing apparatus that processes an object to be processed under reduced pressure, and more particularly to a vacuum processing apparatus that can adjust the temperature of the processing apparatus.
[0002]
[Prior art]
In Japanese Patent Publication Nos. 56-53853 and 57-44747, etc., the wafer is electrostatically adsorbed on the processing table using electrostatic chucking means in order to make the temperature distribution of the wafer on the processing table uniform. It is shown that it is processed by plasma.
[0003]
In Japanese Patent Laid-Open Nos. 58-32410 and 60-115226, a single system of refrigerant is introduced into the processing table to cool the processing table, while the wafer is removed using electrostatic adsorption means. It is shown that while being electrostatically adsorbed on the processing table, He gas is introduced into the back surface of the wafer, and the wafer is heated or cooled using heat conduction, free convection or forced convection of the gas. .
[0004]
For processing platforms that require temperature distribution control, the gas flow supplied to the backside of the wafer adsorbed by the electrostatic adsorption means is divided into multiple parts, and the temperature distribution is controlled by controlling each gas flow. A method has been proposed.
[0005]
FIG. 3 is a diagram for explaining a temperature adjustment system of a conventional vacuum processing apparatus. In the figure, reference numerals 3a and 3b denote processing chambers for processing an object to be processed in a reduced-pressure atmosphere, reference numerals 4a and 4b denote processing tables on which wafers are placed, and reference numerals 11a and 11b denote processing chambers 3a and 3b and an exhaust pump for reducing the pressure in the processing chamber. It is an exhaust duct which connects between each. 10a, 10b, 10c, and 10d adjust the temperature of the refrigerant, and the refrigerant circulating devices that circulate the temperature-adjusted refrigerant through circulation pumps 16a, 16b, 16c, and 16d, respectively, and 15a, 15b, 15c, and 15d respectively It is a refrigerant tank arranged in the refrigerant circulation device. The refrigerant circulation devices 10a, 10b, 10c, and 10d are connected to the exhaust ducts 11a and 11b and the processing bases 4a and 4b through cooling passages 17a, 17b, 17c, and 17d.
[0006]
In the conventional vacuum processing apparatus, for example, the refrigerant circulation device 16a adjusts the temperature of the refrigerant stored in the tank 15a to a predetermined value and then supplies the refrigerant duct 16a to the exhaust duct 11a via the circulation pump 16a. Adjust to a predetermined value. Similarly, the refrigerant circulation devices 16b, 16c, and 16d adjust the temperatures of the exhaust duct 11b and the processing tables 4a and 4b to predetermined values, respectively.
[0007]
[Problems to be solved by the invention]
The conventional processing apparatus includes a refrigerant circulation device that adjusts the temperature of the processing table and a refrigerant circulation device that adjusts the wall temperature of the exhaust duct connecting between the processing chamber and an exhaust pump that depressurizes the processing chamber. And these devices are individually adjusted to adjust the wall temperature of the processing table and the exhaust duct. For this reason, the structure of the temperature control apparatus comprised with a refrigerant | coolant circulation apparatus, a cooling channel | path, etc. becomes complicated, and the control for temperature adjustment is also complicated.
[0008]
The present invention has been made in view of these problems, and provides a vacuum processing apparatus capable of adjusting a processing table and an exhaust duct to an arbitrary temperature with a simple configuration.
[0009]
[Means for Solving the Problems]
The present invention employs the following means in order to solve the above problems.
[0010]
Processing chamber for processing an object to be processed in a reduced pressure atmosphere, the treatment process stand arranged in the room for placing the object to be processed, an exhaust duct for connecting the exhaust pump to depressurize the processing chamber and the treatment chamber, in a vacuum processing apparatus including a refrigerant circulating system for supplying refrigerant to said processing stage and said exhaust duct, the refrigerant circulating system, through the first coolant supply passage is connected to a temperature controller, said temperature adjustment The apparatus heats a part of the refrigerant supplied from the refrigerant circulation device to a temperature at which a reaction product generated during the processing of the substrate to be processed is difficult to adhere to the exhaust duct by a heater, and passes the second refrigerant supply path. While supplying the exhaust duct to the exhaust duct, the remainder of the refrigerant is supplied to the processing table via a third refrigerant supply path.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a diagram illustrating a vacuum processing apparatus according to an embodiment of the present invention. Here, a microwave (UHF) etching apparatus will be described as an example of the vacuum processing apparatus. In the figure, reference numeral 3 denotes a vacuum processing chamber, the upper end of which is composed of a ceramic or quartz microwave introduction window 1, and a processing table 4 on which, for example, a wafer 6 is mounted as a processing object. Reference numeral 3 denotes a vacuum processing chamber. Micro (UHF) waves generated by a magnetron or a UHF power source (not shown) are introduced into the vacuum processing chamber from the microwave introduction window 1. Reference numerals 2a and 2b denote processing gas inlets and outlets. The processing gas is introduced from the processing gas inlet 2a and discharged through the processing gas outlet 2b, whereby a predetermined pressure is reduced in the processing chamber. Keep in state. As a result, plasma 5 is generated in the processing chamber 3. An exhaust duct 11 is sealed above the exhaust duct 11 and connected to a vacuum pump (not shown) below. Further, the exhaust duct 11 is provided with a refrigerant passage 17 for adjusting the inner surface temperature thereof.
[0012]
Reference numeral 14 denotes a temperature adjusting device that adjusts the temperature of the refrigerant supplied to the processing table and the exhaust duct. For example, a part of the refrigerant supplied from the refrigerant circulation device 10 is heated and supplied to the refrigerant passage 17 formed in the exhaust duct. The remaining refrigerant is supplied to the processing table 4 as it is. The temperature adjusting device 14 may be a heating device, a cooling device, or a heating device or a cooling device having a temperature control function for controlling the temperature to a set value. 10a is a refrigerant supply path connecting the refrigerant circulation device 10 and the temperature adjusting device 14, 14a is a refrigerant passage connecting the temperature adjusting device 14 and the processing table 4, and 14b is a refrigerant passage 17 formed in the temperature adjusting device 14 and the exhaust duct 11. Reference numeral 4 denotes a processing path for connecting the gas to the processing base, which is formed by spraying a dielectric material such as alumina ceramic serving as a dielectric film for electrostatic adsorption on an aluminum electrode member, A treatment table cover 8 made of alumina or quartz is covered. The processing table 4 is provided with a sealed refrigerant groove 9c for allowing the refrigerant to flow in consideration of the temperature distribution on the surface. Refrigerant inlets 9b and outlets 9a are provided at both ends of the refrigerant groove 9c, and the inlets 9b and outlets 9a are connected to the temperature control device 14, respectively.
[0013]
The electrode member of the processing table 4 is connected to the DC power source 12 through the insulating shaft 13. During the etching process, 5 plasmas are generated as described above. Meanwhile, the DC voltage is applied to both ends of the dielectric film formed on the surface of the electrode member through the plasma to generate an electrostatic adsorption force, and the wafer 6 is attracted to the processing table 4 by the electrostatic adsorption force. Hold.
[0014]
Further, a heat transfer gas supply path for supplying a heat transfer gas such as He is formed in the insulating shaft 13, and the heat transfer gas is a through hole formed in the central portion of the heat transfer gas supply path and the processing table. To the wafer 6 mounting surface of the processing table 4. A heat transfer gas pressure control device 7 is connected to the supply end side of the heat transfer gas supply path via a heat transfer gas supply path pipe. The heat transfer gas pressure controller 7 controls the supply amount of heat transfer gas such as He so that the gas pressure between the wafer 6 mounting surface and the wafer 6 becomes a predetermined value.
[0015]
FIG. 2 is a diagram illustrating a temperature adjustment system of the vacuum processing apparatus according to the present embodiment. In the figure, reference numeral 14 denotes the temperature adjusting device described above. For example, a part of the refrigerant supplied from the refrigerant circulation device 10 is heated by the heater 14c and supplied to the refrigerant passage 17, and the remaining refrigerant is supplied to the processing table 4 as it is. To do. A refrigerant circulation device 10 includes a circulation pump 16 and a refrigerant tank 15. In the figure, the same parts as those shown in FIG. Moreover, in the figure, the representative example of the temperature of the refrigerant | coolant which flows there through the refrigerant | coolant supply 10a and the refrigerant | coolant channel | paths 14a and 14c was shown.
[0016]
As shown in FIG. 2, a refrigerant circulation device 10 is connected to the refrigerant passage 17 formed in the processing table 4 and the exhaust duct 11, and a temperature adjusting device 14 is provided in the middle to change the temperature of some refrigerants. Yes. A refrigerant tank 15 and a circulation pump 16 are installed inside the refrigerant circulation device 10. The refrigerant exits from the refrigerant circulation device 10 and once enters the temperature adjustment device 14, where it is branched in two directions, one is introduced into the treatment table 4 at the same temperature, and the other is in the temperature adjustment device 14. The temperature is further raised by the heater 14 c and then introduced into the refrigerant passage 17 formed in the exhaust duct 11. At this time, due to the temperature difference between the refrigerants, the temperature of the processing table 4 and the exhaust duct 7 is adjusted by the refrigerants having different temperatures. In the figure, reference numeral 18 denotes a processing apparatus main body. In the figure, two processing apparatuses are accommodated.
[0017]
The temperature adjusting device 14 placed in the middle of the flow path for supplying the refrigerant may be heated or cooled in accordance with the temperature of the refrigerant to be supplied to the processing table 4 and the exhaust duct 11, but the heating is provided with a storage tank. Since the temperature can be adjusted only by the heater, the configuration can be simplified. In addition, when comprising a temperature control apparatus as a cooling device, it can be set as the cooling device which cools a refrigerant | coolant using a cooling water and a heat exchanger.
[0018]
Next, an example of performing an etching process using the vacuum processing apparatus shown in FIG. 1 will be described. First, the processing gas is exhausted into the processing chamber 3 while being introduced from the gas inlet 2a at a predetermined flow rate. The etching process of the wafer 6 is performed by generating a plasma 5 by the interaction of a processing gas in the processing chamber 3 with a micro (UHF) wave and a magnetic field by a solenoid (not shown).
[0019]
The temperature distribution of the treatment table 4 can be arbitrarily adjusted by the groove shape of the refrigerant passage formed in the treatment table 4, the arrangement shape of the refrigerant passage, the number of the refrigerant passages, the discharge refrigerant temperature / flow rate of the refrigerant circulation device 10, and the like. Thus, the accuracy of the temperature distribution of the processing table 4 can be adjusted well.
[0020]
On the other hand, the temperature adjustment of the exhaust duct 11 is a temperature adjustment for making it difficult for the reaction product generated during the processing of the wafer 6 to adhere to the exhaust duct. . For this reason, the temperature control apparatus 14 can be comprised simply.
[0021]
Further, the present invention can be applied to a processing apparatus other than the above-described magnetic field micro (UHF) wave etching apparatus, for example, a parallel plate RIE (Reactive Ion Etching) apparatus. Instead of generating plasma by the interaction of the micro (UHF) wave and the magnetic field of the solenoid as in the magnetic field micro (UHF) wave etching apparatus, an upper electrode grounded facing the processing table 4 is provided, and this electrode is provided. A plasma can be generated by applying a high frequency with a high frequency power supply for bias application between the processing table on which the wafer is placed. This method differs from the above example only in the plasma generation method, and the same etching process can be performed by configuring the processing table 4 in the same manner as in the above example.
[0022]
In addition, the present invention can be widely applied to a processing apparatus that processes an object to be processed such as a wafer in a reduced pressure atmosphere while heating with plasma or the like. For example, plasma etching, plasma CVD (Chemical Vapor Deposition), sputtering, and the like can be given as examples of processing an object to be processed using plasma. Examples of processing an object to be processed without using plasma include ion implantation, MBE (Molecular Beam Epitaxy), vapor deposition, and low pressure CVD.
[0023]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a vacuum processing apparatus capable of adjusting the processing table and the exhaust duct to arbitrary temperatures with a simple configuration.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a vacuum processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a temperature adjustment system of a vacuum processing apparatus.
FIG. 3 is a diagram illustrating a temperature adjustment system of a conventional vacuum processing apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Microwave introduction window 2a Processing gas inlet 2b Processing gas outlet 3 Vacuum processing chamber 4 Processing stand 5 Plasma 6 Wafer 7 Heat transfer gas pressure control device 8 Processing stand cover 9a Refrigerant outlet 9b Refrigerant inlet 10 Refrigerant circulation device 10a Refrigerant supply path 11 Exhaust duct 12 DC power supply 13 Insulating shaft 14 Temperature adjusting device 14a, 14b Refrigerant passage 14c Heater 15 Refrigerant tank 16 Circulation pump 17 Refrigerant passage 18 Processing device body

Claims (1)

Processing chamber for processing an object to be processed in a reduced pressure atmosphere, the treatment process stand arranged in the room for placing the object to be processed, an exhaust duct for connecting the exhaust pump to depressurize the processing chamber and the treatment chamber, in a vacuum processing apparatus including a refrigerant circulating system for supplying refrigerant to said processing stage and said exhaust duct,
The refrigerant circulation device is connected to a temperature adjustment device via a first refrigerant supply path, and the temperature adjustment device uses the heater to process a part of the refrigerant supplied from the refrigerant circulation device. The reaction product that is sometimes generated is heated to a temperature at which it is difficult to adhere to the exhaust duct and is supplied to the exhaust duct via the second refrigerant supply path, while the remaining refrigerant is supplied via the third refrigerant supply path. And supplying to the processing table .

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