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JP4050841B2 - Wet etching processing equipment - Google Patents
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JP4050841B2 - Wet etching processing equipment - Google Patents

Wet etching processing equipment Download PDF

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Publication number
JP4050841B2
JP4050841B2 JP11807499A JP11807499A JP4050841B2 JP 4050841 B2 JP4050841 B2 JP 4050841B2 JP 11807499 A JP11807499 A JP 11807499A JP 11807499 A JP11807499 A JP 11807499A JP 4050841 B2 JP4050841 B2 JP 4050841B2
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Japan
Prior art keywords
etching
side wall
etching solution
processing
processing tank
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JP2000311881A (en
Inventor
博敬 野畑
覚 本多
勝彦 杉本
真吾 杉本
武弘 萩原
尚史 米田
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SPC Electronics Corp
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SPC Electronics Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/08Apparatus, e.g. for photomechanical printing surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Description

【0001】
【発明の属する技術分野】
この発明はウェットエッチング処理装置、詳しくは液晶基板、半導体ウエハ−用基板あるいは電子回路基板などの製造過程において、各種基板にエッチング処理を施す為の装置に関するものである。
【0002】
【従来の技術】
図1は従来のウェットエッチング処理装置の代表例を示したものであり、上方が開放された有底箱形をした処理槽1の底部にはエッチング液供給ノズル2が取付けられており、一方、上縁周囲にはオ−バ−フロ−樋3が設けられ、処理対象物4は処理対象物設置機構5に載置された状態で、エッチング液6が満たされている処理槽1内に浸漬される様になっている。又、前記オ−バ−フロ−樋3は循環ポンプ7及びフィルタ−8を介してエッチング液供給ノズル2と接続されており、処理槽1からあふれ出たエッチング液6はオ−バ−フロ−樋3で補集された後、エッチング液供給ノズル2から再度処理槽1内に吐出して、再循環する様になっている。
【0003】
又、9は槽外に設けられた上下揺動装置であり、処理槽1内の処理対象物設置機構5はハンガ−10によってこの上下揺動機構9に接続され、処理槽1内において上下揺動運動を行う様になっている。又、処理槽1の底面にはヒ−タ−28が取付けられていた。
【0004】
【発明が解決しようとする課題】
この従来のウェットエッチング処理装置においては、処理槽1内にエッチング液6を満たし、その底部のエッチング液供給ノズル2からエッチング液6を吐出させ、処理槽1からあふれ出たエッチング液6をオ−バ−フロ−樋3で補集して、再循環させる様にして、この処理槽1内に処理対象物4を浸漬させて、エッチング処理を行う。
【0005】
つまり、エッチング液6は処理槽1の底部から上部へと流動する様になっているのであるが、このエッチング液6の流動はなかなか均一には行い得なかった。つまり、槽壁から離れた液面中央部ではエッチング液6の流れは滞留しやすく、エッチング液6の置換が十分に行われず、この様な状態ではエッチングの均一性が得られなかった。
【0006】
この為、上下揺動機構9を用いて処理対象物4をエッチング液6中で上下に揺動し、均一性の向上とエッチングの促進を図っていた。しかし、上下揺動機構5は処理作業中、処理対象物4の上方で作動することになる為、この部分からの発塵は避けられず、エッチング液に混入することによりエッチング液6の劣化の原因にもなっていた。又、上下揺動機構9は可動部分が多く、構造が複雑で装置が大きくなりやすく、可動部分が多い為、故障もおこりやすかった。
【0007】
一方、エッチング加工すべき各種基板のサイズは電子機器の高性能化に伴い、ますます拡大する傾向にあり、これに伴いエッチング処理槽も大型化が要請されているが、この処理槽の大型化に伴い、槽内においてエッチング液が滞る領域も広がることは避けられず、エッチング処理の不均一もますます顕著になって来ている。
【0008】
又、上下揺動機構9も基板のサイズ拡大に伴い当然大型化せざろう得ず、それに伴い重量も増大し、これを駆動する為の電力消費量も増大していた。又、上下揺動機構9自体は処理槽1の上方に位置しており、処理槽1中には設けることができないので、処理槽1の上面は開放しておく必要があるが、特にエッチング液6をヒ−タ−28によって加熱して使用する場合には、エッチング液6の蒸気がこの開放部からこの処理槽1の周囲に拡散し、環境や作業者に健康上の悪影響を与えることがあった。
【0009】
この発明は、ウェットエッチング処理装置に関する上記問題点を解決することを目的とし、処理槽内におけるエッチング液の流れを均一化し、滞る部分をなくして均一なエッチング処理を可能とすると共に、併せて環境への悪影響となくすと共に、装置全体をコンパクト化しながら益々大型化する傾向にある基板にも十分対応できる様にしたウェットエッチング処理装置を提供せんとするものである。
【0010】
【課題を解決するための手段】
この発明は、板状をした処理対象物4をエッチング液6を満たした処理槽11内に浸漬せしめてエッチング液6を水平方向に流動させてエッチング処理するウェットエッチング処理装置において、処理槽11の対向した一対の側壁13,14のうち、一方の側壁13に多数のエッチング液吐出孔15を、他方の側壁14に多数のエッチング液排出孔20をそれぞれ設け、これら液吐出孔15及びエッチング液排出孔20を、エッチング液6を強制的に循環させる配管系32にそれぞれ接続すると共に、前記側壁13とほぼ同じ縦横寸法を有し、整流孔25が等間隔で多数あけられているパンチングボード状の整流板24の表裏に、矩形状の薄板を井桁状に組合わせた枠体26の内側空間に、前記枠体26の側辺と平行に複数の格子板27を縦横に交叉させてヨロイ戸状に取り付けたルーバー23をサンドイッチ状に重ね合わせて整流手段30とし、この整流手段30を側壁13に固定し、更に、ルーバー23の表裏に一対の整流板24をサンドイッチ状に重ね合わせて整流手段31とし、この整流手段31を側壁14から一定の間隔G2をあけて側壁14と平行に処理槽11内に固定し、前記整流手段30を通過させることにより、エッチング液吐出孔15から吐出されるエッチング液6を処理槽11内に均一に拡散させると共に、整流手段31を通過させることによって処理槽11内のエッチング液6をエッチング液排出孔20が均等に吸引する様にして上記課題を解決した。
【0011】
【発明の実施の形態】
図2はこの発明に係るウェットエッチング処理装置の一実施形態の縦断面図、図3はその斜視図、図4は図3とは逆の方向から見た斜視図である。
【0012】
図中11は有底箱形をしたエッチング処理槽であり、その内部にはエッチング液6が満たされる様になっている。このエッチング処理槽11の底面には、処理対象物設置機構12が設けられており、この処理対象物設置機構12には複数枚の処理対象物4が縦方向に載置される様になっている。なお、処理対象物4とはエッチング処理すべき各種基板のことであり、板状を呈している。
【0013】
更に、この処理槽11の載置されるべき処理対象物4の左右端面側の対向した一対の側壁13、14のうち、一方の側壁13の壁面には複数のエッチング液吐出孔15が明けられており、該エッチング液吐出孔15にはエッチング液注入管16の端末が接続されている。このエッチング液注入管16は一本の幹管17から枝状に分岐しており、その幹管17にはフィルタ−18及び循環ポンプ19が接続されている。又、もう一方の側壁14には複数個のエッチング液排出孔20が明けられており、該エッチング液排出孔20にはエッチング液排出管21の端末が接続されており、このエッチング液排出管21の幹管22は前記循環ポンプ19の入口側に接続されている。これらエッチング液注入管16、幹管17、幹管22及びエッチング液排出管21で配管系32が構成されている。
【0014】
更に、エッチング液注入管16が接続されている側の側壁13には整流板24の表裏をル−バ−23でサンドイッチ状に挟んでなる整流手段30が固定されている。図7はこの整流手段30の斜視図である。整流板24は図5に示す様に、多数の整流孔25が明けられたパンチングボ−ド状の板状体であり、この整流孔25の径及び開口率は処理槽11の大きさ、エッチング液6の流速、性状などに応じて適宜決定される。又、ル−バ−23は図6に示す様に矩形状の薄板を井桁状に組合わせた四角形の枠体26の内側空間に、前記枠体26の側辺と平行に複数の格子板27を縦横に交叉させてヨロイ戸状に取り付けたものであり、エッチング液6の流体圧力に抗することができる強度を持った薄板によって構成されている。整流板24はル−バ−23を介して側壁13側に設置されており、側壁13との間には一定の間隔G1が設けられていることになる。
【0015】
一方、エッチング液排出管21が接続されている側壁14にはル−バ−23の表裏を整流板24でサンドイッチ状に挟んでなる整流手段31が、側壁14から一定の間隔G2をあけて、側壁14と平行に固定されている。図8はこの整流手段の斜視図である。この側壁14側の整流板24及びル−バ−23自体は前述の側壁13側の整流板24及びル−バ−23と同じ構造のものである。又、処理槽11の底面外側にはヒ−タ−28が取り付けられており、その上部開口部には蓋29が設けられている。又、図3及び図4において30はオ−バ−フロ−槽であり、余剰のエッチング液6を捕集する為のものである。なお、この図3及び図4は処理対象物4を省略して描いているが、処理対象物4は側壁13、14とは直角の方向、即ち、エッチング液6の流れAと平行な方向を向いて載置される。
【0016】
なお、整流手段30及び31は整流板24ル−バ−23とを組合わせたものであるが、処理槽11の大きさ、エッチング液6の量や性状、処理対象物4の数量や形状等に応じて、整流板24の整流孔25の径や開口率、ル−バ−23の格子板27の大きさ、取付け角度等適宜調整して良いことはもちろんである。なお、図2、図3、図4中33は整流手段30、31を固定する為の固定枠である。
【0017】
このエッチング処理装置は上記のとおりの構成を有するものであり、搬送ロボット等の搬送手段によって搬送されてきた処理対象物4は、上方から処理槽11内に投入され、処理対象物設置機構12上に載置され、載置され次第、処理槽11の蓋29は閉じられる。処理槽11内のエッチング液6は側壁14のエッチング液排出孔20から循環ポンプ及びフィルタ−8を経て、幹管17に送られ、エッチング液注入管16を通り、エッチング液吐出孔15から再び処理槽11内に環流される様になっており、この環流運動によって処理槽11内においてはエッチング液は側壁13側から側壁14側へ水平方向に絶えず流動することになる。この際、エッチング液吐出孔15にはルーバー23と整流板24とを組合わせた整流手段30が取り付けられているので、エッチング液吐出孔15から吐き出されたエッチング液6は、側壁13側のルーバー23の格子板27によって水平方向にその流れが規制された後、整流板24に衝突して乱流状態になり、撹拌されて均一化し、反対側のルーバー23によって再び水平方向に流れが整流されて処理槽11内に送り出される。一方、側壁14側には、ルーバー23を整流板24でサンドイッチ状に挟み込んだ整流手段31が位置せしめられているので、側壁14方向に流動して来たエッチング液6は、整流板24に衝突して乱流状態になり、撹拌されて均一化した後、整流板24の整流孔25からルーバー23に流れ込み、これによって水平方向に流れが規制された後、反対側の整流板24に再び衝突して乱流状態になり、撹拌されて均一化された後、エッチング液排出孔20から配管系32に送り出される。この様に、エッチング液6は処理槽11に送り込まれる際と、排出される際に、ルーバー23と整流板24とによって整流と撹拌が繰り返されるので、処理槽11内においてエッチング処理液6は、極めて均一な流動が図られる。特に処理槽11が大容積の場合や、処理対象物4の容積に比して処理槽11が相対的に小さい場合など、この整流手段30、31が有効に作用することになる。
0018
一方、処理プロセスによってはヒ−タ−28に通電してエッチング液6を加熱する場合があるが、処理槽11の上方開口部は処理対象物4の搬入搬出時のみ開き、それ以外のときは常時蓋29によって閉塞されているので、エッチング液6の蒸気が装置周囲に拡散することはなく、作業者や周囲に健康上の悪影響を与えることを防ぐことができる。更に、処理槽11は常時蓋29によって閉塞されているので、外部からの塵埃が侵入することがなく、エッチング液6の劣化を防ぐことができる。
0019
【発明の効果】
この発明に係るエッチング処理装置は上述の通り、均一なエッチング処理が可能なだけではなく、周囲への健康上の悪影響を防ぎ、コンパクトな装置で大きな処理対象物を処理することができる等、多くのすぐれた効果を有し、実用上極めてすぐれたものである。
【図面の簡単な説明】
【図1】 従来のウェットエッチング処理装置の代表例の縦断面図。
【図2】 この発明に係るウェットエッチング処理装置の一実施形態の縦断面図。
【図3】 その斜視図。
【図4】 図3とは逆の方向から見たその斜視図。
【図5】 この発明に係るウェットエッチング処理装置の構成部分である整流板24の一例の斜視図。
【図6】 同じく構成部分であるル−バ−23の一例の斜視図。
【図7】 この発明において用いられる整流手段の一例の斜視図。
【図8】 同じく整流手段の一例の斜視図。
【符号の説明】
1 処理槽
2 エッチング液供給ノズル
3 オ−バ−フロ−樋
4 処理対象物
5 処理対象物設置機構
6 エッチング液
7 循環ポンプ
8 フィルタ−
9 上下揺動機構
10 ハンガ−
11 処理槽
12 処理対象物設置機構
13 側壁
14 側壁
15 エッチング液吐出孔
16 エッチング液注入管
17 幹管
18 フィルタ−
19 循環ポンプ
20 エッチング液排出孔
21 エッチング液排出管
22 幹管
23 ル−バ−
24 整流板
25 整流孔
26 枠体
27 格子板
28 ヒ−タ−
29 蓋
30 整流手段
31 整流手段
32 配管系
33 固定枠
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wet etching processing apparatus, and more particularly to an apparatus for performing etching processing on various substrates in a manufacturing process of a liquid crystal substrate, a semiconductor wafer substrate, an electronic circuit substrate, or the like.
[0002]
[Prior art]
FIG. 1 shows a typical example of a conventional wet etching processing apparatus. An etching solution supply nozzle 2 is attached to the bottom of a processing tank 1 having a bottomed box shape with an open top, An overflow rod 3 is provided around the upper edge, and the processing object 4 is immersed in the processing tank 1 filled with the etching solution 6 while being placed on the processing object installation mechanism 5. It is supposed to be done. The overflow 3 is connected to the etching solution supply nozzle 2 via a circulation pump 7 and a filter 8, and the etching solution 6 overflowing from the processing tank 1 is overflowed. After being collected by the trough 3, it is discharged again from the etching solution supply nozzle 2 into the processing tank 1 and recirculated.
[0003]
Reference numeral 9 denotes an up-and-down swing device provided outside the tank. A processing object installation mechanism 5 in the processing tank 1 is connected to the up-and-down swing mechanism 9 by a hanger 10 and is moved up and down in the processing tank 1. Doing dynamic exercise. Further, a heater 28 was attached to the bottom surface of the processing tank 1.
[0004]
[Problems to be solved by the invention]
In this conventional wet etching processing apparatus, the etching tank 6 is filled with the etching liquid 6, the etching liquid 6 is discharged from the etching liquid supply nozzle 2 at the bottom, and the etching liquid 6 overflowing from the processing tank 1 is turned on. Etching is performed by immersing the processing object 4 in the processing tank 1 so as to be collected and recirculated by the barbed bowl 3.
[0005]
That is, the etching solution 6 flows from the bottom to the top of the processing tank 1, but the etching solution 6 cannot be uniformly flowed. That is, the flow of the etching solution 6 tends to stay in the central portion of the liquid surface away from the tank wall, and the etching solution 6 is not sufficiently replaced. In such a state, the etching uniformity cannot be obtained.
[0006]
For this reason, the processing object 4 is swung up and down in the etching solution 6 using the up-and-down rocking mechanism 9 to improve uniformity and promote etching. However, since the up-and-down swing mechanism 5 operates above the processing object 4 during the processing operation, dust generation from this portion is inevitable, and the etching solution 6 is deteriorated by being mixed into the etching solution. It was also the cause. Further, the vertical swing mechanism 9 has many movable parts, the structure is complicated, the device tends to be large, and there are many movable parts, so that the failure is likely to occur.
[0007]
On the other hand, the size of various substrates to be etched tends to increase as the performance of electronic equipment increases, and as a result, there is a demand for larger etching tanks. Along with this, it is inevitable that the region where the etching solution is stagnated in the bath is unavoidable, and the nonuniformity of the etching process becomes more and more remarkable.
[0008]
Also, the vertical swing mechanism 9 naturally has to be increased with the increase in the size of the substrate, and accordingly the weight has increased and the power consumption for driving it has also increased. Further, since the vertical swing mechanism 9 itself is located above the processing tank 1 and cannot be provided in the processing tank 1, the upper surface of the processing tank 1 needs to be opened. When the heater 6 is heated by the heater 28 and used, the vapor of the etching solution 6 diffuses from the open portion to the periphery of the treatment tank 1 and may adversely affect the environment and workers. there were.
[0009]
An object of the present invention is to solve the above-mentioned problems related to the wet etching processing apparatus, to make the flow of the etching solution uniform in the processing tank, to eliminate the stagnation part, and to perform a uniform etching process, and also to the environment. The present invention intends to provide a wet etching processing apparatus that can cope with a substrate that tends to become larger and more compact while making the entire apparatus compact.
[0010]
[Means for Solving the Problems]
The present invention relates to a wet etching processing apparatus in which a plate-like processing object 4 is immersed in a processing tank 11 filled with an etching solution 6 and the etching solution 6 flows in a horizontal direction to perform an etching process. Of the pair of opposing side walls 13, 14, a number of etching solution discharge holes 15 are provided on one side wall 13, and a number of etching solution discharge holes 20 are provided on the other side wall 14, respectively. Each of the holes 20 is connected to a piping system 32 that forcibly circulates the etching solution 6, and has the same vertical and horizontal dimensions as the side wall 13, and has a punching board shape in which a large number of rectifying holes 25 are opened at equal intervals. A plurality of lattice plates 27 are vertically arranged in parallel with the sides of the frame body 26 in the inner space of the frame body 26 in which rectangular thin plates are combined in a cross beam shape on the front and back of the rectifying plate 24. The louver 23 crossed in the shape of a Yoroi door is overlapped in a sandwich shape to form a rectifying means 30, the rectifying means 30 is fixed to the side wall 13, and a pair of rectifying plates 24 are sandwiched on the front and back of the louver 23. The rectifying means 31 is superposed on the side wall 14 and is fixed in the processing tank 11 in parallel with the side wall 14 with a predetermined gap G2 from the side wall 14, and the rectifying means 30 is allowed to pass therethrough to discharge the etching solution. The etching solution 6 discharged from the holes 15 is uniformly diffused into the processing tank 11 and the rectifying means 31 is allowed to pass so that the etching liquid discharge holes 20 uniformly suck the etching solution 6 in the processing tank 11. The above problems were solved.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
2 is a longitudinal sectional view of an embodiment of a wet etching apparatus according to the present invention, FIG. 3 is a perspective view thereof, and FIG. 4 is a perspective view seen from the opposite direction to FIG.
[0012]
In the figure, reference numeral 11 denotes an etching treatment tank having a bottomed box shape, in which an etching solution 6 is filled. A processing object installation mechanism 12 is provided on the bottom surface of the etching processing tank 11, and a plurality of processing objects 4 are placed in the vertical direction on the processing object installation mechanism 12. Yes. The processing object 4 is various substrates to be etched and has a plate shape.
[0013]
Further, among the pair of opposing side walls 13 and 14 on the left and right end face sides of the processing object 4 to be placed in the processing tank 11, a plurality of etching solution discharge holes 15 are opened on the wall surface of one side wall 13. The end of the etchant injection pipe 16 is connected to the etchant discharge hole 15. The etchant injection pipe 16 branches off from a single trunk pipe 17, and a filter 18 and a circulation pump 19 are connected to the trunk pipe 17. In addition, a plurality of etching solution discharge holes 20 are formed in the other side wall 14, and an end of an etching solution discharge pipe 21 is connected to the etching solution discharge hole 20. The main pipe 22 is connected to the inlet side of the circulation pump 19. A piping system 32 is constituted by the etching solution injection pipe 16, the trunk pipe 17, the trunk pipe 22, and the etching liquid discharge pipe 21.
[0014]
Further, a rectifying means 30 is fixed to the side wall 13 on the side to which the etching solution injection pipe 16 is connected. The rectifying means 30 is formed by sandwiching the front and back of the rectifying plate 24 with a rubber 23. FIG. 7 is a perspective view of the rectifying means 30. As shown in FIG. 5, the rectifying plate 24 is a punching board-like plate body in which a large number of rectifying holes 25 are opened, and the diameter and opening ratio of the rectifying holes 25 are the size of the processing tank 11 and etching. It is determined appropriately according to the flow rate and properties of the liquid 6. Further, as shown in FIG. 6, the louver 23 has a plurality of lattice plates 27 in an inner space of a rectangular frame 26 in which rectangular thin plates are combined in a cross-beam shape and in parallel with the side of the frame 26. Are attached in the shape of a Yoroi door by crossing them vertically and horizontally, and is constituted by a thin plate having a strength capable of resisting the fluid pressure of the etching solution 6. The rectifying plate 24 is installed on the side wall 13 side through the louver 23, and a constant gap G <b> 1 is provided between the rectifying plate 24 and the side wall 13.
[0015]
On the other hand, the side wall 14 side of the etching liquid discharge pipe 21 is connected, Le - rectifying means 31 formed by interposing a sandwich by the rectifier plate 24 the front and back of the bus -23, opened from the side wall 14 fixed interval G2 The side wall 14 is fixed in parallel . FIG. 8 is a perspective view of the rectifying means. The rectifying plate 24 and the louver 23 itself on the side wall 14 side have the same structure as the rectifying plate 24 and the louver 23 on the side wall 13 side. Further, a heater 28 is attached to the outside of the bottom surface of the processing tank 11, and a lid 29 is provided at the upper opening. 3 and 4, reference numeral 30 denotes an overflow tank for collecting excess etching solution 6. Although FIG. 3 and FIG. 4 are drawn with the processing object 4 omitted, the processing object 4 has a direction perpendicular to the side walls 13, 14, that is, a direction parallel to the flow A of the etching solution 6. Placed facing.
[0016]
The rectifying means 30 and 31 are a combination of the rectifying plate 24 and the louver 23 , but the size of the processing tank 11, the amount and properties of the etching solution 6, and the number and shape of the processing object 4. Of course, the diameter and opening ratio of the rectifying hole 25 of the rectifying plate 24, the size of the lattice plate 27 of the louver 23, the mounting angle, and the like may be adjusted as appropriate. 2, 3, and 4, reference numeral 33 denotes a fixing frame for fixing the rectifying means 30 and 31.
[0017]
This etching processing apparatus has the configuration as described above, and the processing object 4 transported by transporting means such as a transporting robot is put into the processing tank 11 from above and is placed on the processing object installation mechanism 12. The lid 29 of the processing tank 11 is closed as soon as it is placed. The etching solution 6 in the processing tank 11 is sent from the etching solution discharge hole 20 in the side wall 14 to the trunk pipe 17 through the circulation pump and the filter 8, passes through the etching solution injection pipe 16, and is processed again from the etching solution discharge hole 15. The recirculation movement causes the etching solution to flow continuously in the horizontal direction from the side wall 13 side to the side wall 14 side. At this time, since the rectifying means 30 in which the louver 23 and the rectifying plate 24 are combined is attached to the etching solution discharge hole 15, the etching solution 6 discharged from the etching solution discharge hole 15 is louvered on the side wall 13 side. After the flow is restricted in the horizontal direction by the grid plate 27 of 23, it collides with the rectifying plate 24 to become a turbulent state, is agitated and homogenized, and is again rectified in the horizontal direction by the opposite louver 23. To the processing tank 11. On the other hand, since the rectifying means 31 sandwiching the louver 23 with the rectifying plate 24 is positioned on the side wall 14 side, the etching solution 6 flowing in the direction of the side wall 14 collides with the rectifying plate 24. Then, after turbulent flow, stirring and homogenizing, the air flows into the louver 23 from the rectifying hole 25 of the rectifying plate 24, thereby restricting the flow in the horizontal direction, and then collides with the rectifying plate 24 on the opposite side again. Then, a turbulent state is obtained, and the mixture is agitated and homogenized, and then sent out from the etching solution discharge hole 20 to the piping system 32. In this way, when the etching solution 6 is sent to the processing tank 11 and discharged, the rectification and stirring are repeated by the louver 23 and the rectifying plate 24. Extremely uniform flow is achieved. In particular, when the processing tank 11 has a large volume or when the processing tank 11 is relatively small compared to the volume of the processing object 4, the rectifying means 30 and 31 act effectively.
[ 0018 ]
On the other hand, depending on the treatment process, the heater 28 may be energized to heat the etching solution 6, but the upper opening of the treatment tank 11 is opened only when the treatment object 4 is carried in and out, and otherwise. Since it is always closed by the lid 29, the vapor of the etching solution 6 does not diffuse around the apparatus, and it is possible to prevent adverse health effects on workers and the surroundings. Furthermore, since the processing tank 11 is always closed by the lid 29, dust from the outside does not enter and the etching solution 6 can be prevented from deteriorating.
[ 0019 ]
【The invention's effect】
As described above, the etching apparatus according to the present invention is not only capable of performing a uniform etching process, but also prevents adverse health effects on the surroundings, and can process a large object to be processed with a compact apparatus. It has an excellent effect and is extremely excellent in practical use.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a typical example of a conventional wet etching apparatus.
FIG. 2 is a longitudinal sectional view of an embodiment of a wet etching processing apparatus according to the present invention.
FIG. 3 is a perspective view thereof.
4 is a perspective view seen from the opposite direction to FIG. 3. FIG.
FIG. 5 is a perspective view of an example of a rectifying plate 24 that is a component of the wet etching apparatus according to the present invention.
FIG. 6 is a perspective view of an example of a louver 23, which is also a constituent part.
FIG. 7 is a perspective view of an example of rectifying means used in the present invention.
FIG. 8 is a perspective view of an example of the rectifying means.
[Explanation of symbols]
1 treatment tank
2 Etching solution supply nozzle
3 Overflow 樋
4 processing object
5 Processing object installation mechanism
6 Etching solution
7 Circulation pump
8 Filter
9 Vertical swing mechanism 10 Hanger
DESCRIPTION OF SYMBOLS 11 Processing tank 12 Processing object installation mechanism 13 Side wall 14 Side wall 15 Etching liquid discharge hole 16 Etching liquid injection pipe 17 Trunk pipe 18 Filter
19 Circulation pump 20 Etch solution discharge hole 21 Etch solution discharge tube 22 Trunk tube 23 Louver
24 rectifying plate 25 rectifying hole 26 frame 27 lattice plate 28 heater
29 Lid 30 Rectifying means 31 Rectifying means 32 Piping system 33 Fixed frame

Claims (4)

板状をした処理対象物4をエッチング液6を満たした処理槽11内に浸漬せしめてエッチング液6を水平方向に流動させてエッチング処理するウェットエッチング処理装置において、処理槽11の対向した一対の側壁13、14のうち、一方の側壁13に多数のエッチング液吐出孔15を、他方の側壁14に多数のエッチング液排出孔20をそれぞれ設け、これらエッチング液吐出孔15及びエッチング液排出孔20を、エッチング液6を強制的に循環させる配管系32にそれぞれ接続すると共に、前記側壁13とほぼ同じ縦横寸法を有し、整流孔25が等間隔で多数あけられているパンチングボード状の整流板24の表裏に、矩形状の薄板を井桁状に組合わせた枠体26の内側空間に、前記枠体26の側辺と平行に複数の格子板27を縦横に交叉させてヨロイ戸状に取り付けたルーバー23をサンドイッチ状に重ね合わせて整流手段30とし、この整流手段30を側壁13に固定し、更に、ルーバー23の表裏に一対の整流板24をサンドイッチ状に重ね合わせて整流手段31とし、この整流手段31を側壁14から一定の間隔G2をあけて側壁14と平行に処理槽11内に固定し、エッチング液6を前記整流手段30を通過させることにより、エッチング液吐出孔15から吐出されるエッチング液6を処理槽11内に均一に拡散させると共に、整流手段31を通過させることによって処理槽11内のエッチング液6をエッチング液排出孔20が均等に吸引する様にしたことを特徴とするウェットエッチング処理装置。In a wet etching processing apparatus that immerses a plate-like processing object 4 in a processing tank 11 filled with an etching solution 6 and causes the etching solution 6 to flow in the horizontal direction to perform the etching process, a pair of processing tanks 11 facing each other. Among the side walls 13, 14, a large number of etching liquid discharge holes 15 are provided on one side wall 13, and a large number of etching liquid discharge holes 20 are provided on the other side wall 14. The punching board-like rectifying plate 24 is connected to piping systems 32 for forcibly circulating the etching solution 6 and has substantially the same vertical and horizontal dimensions as the side wall 13 and a large number of rectifying holes 25 are formed at equal intervals. A plurality of lattice plates 27 are vertically and horizontally arranged in the inner space of a frame body 26 in which rectangular thin plates are combined in a cross-beam shape on the front and back sides of the frame body 26 in parallel with the side edges of the frame body 26. The louver 23 crossed and attached in the shape of a door is overlapped in a sandwich shape to form a rectifying means 30, and the rectifying means 30 is fixed to the side wall 13. By superposing the rectifying means 31, the rectifying means 31 is fixed in the processing tank 11 in parallel to the side wall 14 with a certain distance G 2 from the side wall 14, and the etching solution 6 is passed through the rectifying means 30. The etching liquid 6 discharged from the etching liquid discharge hole 15 is uniformly diffused into the processing tank 11 and the etching liquid discharge hole 20 uniformly sucks the etching liquid 6 in the processing tank 11 by passing the rectifying means 31. A wet etching processing apparatus characterized in that the above is performed. 処理槽11内に処理対象物設置機構12を設けたことを特徴とする請求項1記載のウェットエッチング処理装置。  The wet etching processing apparatus according to claim 1, wherein a processing object installation mechanism is provided in the processing tank. 処理槽11の上方開口部に蓋29を設けたことを特徴とする請求項1記載のウェットエッチング処理装置。  The wet etching apparatus according to claim 1, wherein a lid 29 is provided at an upper opening of the processing tank 11. 処理槽11にエッチング液加熱用のヒ−タ−28を設けたことを特徴とする請求項1記載のウェットエッチング処理装置。  The wet etching processing apparatus according to claim 1, wherein a heater (28) for heating the etching solution is provided in the processing tank (11).
JP11807499A 1999-04-26 1999-04-26 Wet etching processing equipment Expired - Lifetime JP4050841B2 (en)

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