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JP4061009B2 - Semiconductor laser characteristic measurement device - Google Patents
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JP4061009B2 - Semiconductor laser characteristic measurement device - Google Patents

Semiconductor laser characteristic measurement device Download PDF

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Publication number
JP4061009B2
JP4061009B2 JP2000122885A JP2000122885A JP4061009B2 JP 4061009 B2 JP4061009 B2 JP 4061009B2 JP 2000122885 A JP2000122885 A JP 2000122885A JP 2000122885 A JP2000122885 A JP 2000122885A JP 4061009 B2 JP4061009 B2 JP 4061009B2
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light receiving
semiconductor laser
optical axis
receiving element
measurement
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JP2001305014A (en
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研一 清水
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Ricoh Co Ltd
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Ricoh Co Ltd
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Description

【0001】
【発明が属する技術分野】
本発明は、半導体レーザ、又は該半導体レーザと調整レンズ等を一体化した半導体レーザユニットからの出射光を受光する半導体レーザの特性測定装置に関する。
【0002】
【従来の技術】
従来、半導体レーザの測定装置としては、その基本特性である電流−光出力特性を測定する目的の装置が市販されている。この種の測定装置では、測定ヘッドに固定された半導体レーザへの印加電流を変化させながら、半導体レーザからの出射光を受光素子で受光し出射光強度を測定するものが良く知られている。一般的には、半導体レーザを固定する測定ヘッドに対して非測定時に退避していた受光素子を測定時には半導体レーザの直上へ移動するようになっている。
【0003】
一方、レーザプリンタやデジタル複写機といった各種の画像形成装置に関して広く知られている走査光学系等で使用される光源においても、半導体レーザが使用されている。一般にこの種の光源には、半導体レーザを調整レンズやアパーチャなどと一体化した、いわゆる半導体レーザユニットが用いられる。半導体レーザからの出射光は、カップリングレンズにより平行又はやや発散若しくはやや収束光にされ、アパーチャにより整形される。ここで、半導体レーザ単体からの出射光量と、半導体レーザユニットのアパーチャからの出射光量との比をカップリング効率といい、走査光学系等のシステム光源において評価すべき基本特性の一つである。正確な評価を行うためには、半導体レーザ単体の測定と、半導体レーザユニットの測定とが同じ条件で行われることが望ましい。
【0004】
【発明が解決しようとする課題】
しかしながら、上記従来の半導体レーザの電流−光出力特性等の測定装置では、測定対象が単体の半導体レーザに限られていた。すなわち、従来の測定装置では、受光素子が半導体レーザの出射光位置に近接可能であるが、この場合に高さの異なる半導体レーザユニットのアパーチャからの出射位置に調整する機能は無く、したがって、半導体レーザ単体の場合と同じ条件で半導体レーザユニットからの出射光量等を測定することはできなかった。
【0005】
そこで、本発明は、上記のような現状に鑑みてなされたものであり、その目的とするところは、半導体レーザと半導体レーザユニットなどの出射位置の異なる測定対象を同一の測定装置で測定でき、また、同一の条件で半導体レーザと半導体レーザユニットからの出射光を測定でき、また特に、電流−光出力特性やカップリング効率を精度よく測定できる半導体レーザの特性測定装置を提供することにある。
【0006】
【課題を解決するための手段】
上記目的を達成するために本発明の半導体レーザの特性測定装置は、半導体レーザ単体又は半導体レーザユニットを測定対象とし、該測定対象からの出射光を受光して半導体レーザの特性を測定する装置であって、上記測定対象を取付け可能な測定ヘッドと、該測定ヘッドに取付けた上記測定対象からの出射光を受光するための受光素子と、該受光素子を上記出射光の光軸に交わる方向から上記光軸上の測定位置へ進退させる受光ステージ手段と、少なくとも光軸方向における上記測定対象と上記受光素子との相対的な位置関係を可変にする光軸方向変位手段と、を備え、上記受光ステージ手段は、複数の受光素子を備え、各受光素子を光軸方向の異なる位置へ進退自在に保持することを特長とする。
また、請求項1に記載の半導体レーザの特性測定装置において、上記受光ステージ手段又は上記光軸方向変位手段が、上記受光素子の進退方向及び上記光軸方向の双方に直角な方向で、上記測定対象と受光素子との位置関係が可変であることを特長とする。
また、請求項1又は2に記載の半導体レーザの特性測定装置において、上記受光ステージ手段は、上記受光素子の進退方向に障害物があるか否かを検知する干渉防止手段を備えたことを特長とする。
【0010】
【発明の実施の形態】
以下、図面に基づいて本発明を適用した半導体レーザの特性測定装置の実施例を説明する。
図1は、本発明に関わる測定装置の第1実施例の構成を示す斜視図である。これらの図において、符号1は測定対象を取り付ける測定ヘッド、2はSiPINフォトダイオード等の受光素子、3は受光ステージ手段としての受光ステージ、4は測定対象としての単体の半導体レーザ、5は半導体レーザ4を含む測定対象としての半導体レーザユニット、8は光軸方向変位手段である。半導体レーザユニット5は、単体の半導体レーザ4にカップリングレンズ及びアパーチャを一体化したものである。図1(a)は単体の半導体レーザ4の測定時、同図(b)は半導体レーザユニット5の測定時を示している。
【0011】
また、図2に示すように、制御演算手段6に、上記半導体レーザ4等の測定対象に電流・電圧を印可する駆動電源7及び受光素子2が接続されており、制御演算手段6は、駆動電源7を介して測定対象の半導体へ電荷注入を行うとともに、受光素子2から出力される光強度を取り込み、また、各種の演算処理や各駆動手段(例えば、受光ステージ3)の駆動制御を行うようになっている。
【0012】
受光ステージ3は、測定ヘッド1側と一定の位置関係を保持するように図示しない定盤上に設置された保持部3aと、この保持部3aに保持されたアーム3bとかならなり、アーム3bの先端には、測定対象と対向する方向に受光素子2が固定されている。アーム3bは、保持部3aから光軸と直交する方向Yへ進退可能であり、測定時には、このアーム3bの突出量を大きくすることで、測定対象上の出射光のレーザ光軸上に受光素子2を配置し、また、測定を行わないときは、アーム3bの突出量を小さくして受光素子2を光軸上から退避させることができる。
【0013】
上記測定ヘッド1上には上記測定対象として、単体の半導体レーザ4、又は半導体レーザユニット5を設置可能であり、いずれを設置しても各出射光の光軸方向が揃うようになっている。図1に示す第1実施例では、測定ヘッド1を上下のユニット1a,2aに分割でき、測定対象を設置するための上ユニット1aは、下ユニット2aを固定台としてその上下方向へ、すなわち光軸方向に沿ったZ方向に移動可能になっている。このように、第1実施例では測定ヘッド1に、「光軸方向変位手段8」が設けられている。
【0014】
上記構成の測定装置による測定手順はつぎの通りである。半導体レーザ4からの出射光は発散光であるため、上記受光素子2がその全ての光を取り込むためには半導体レーザ4の近傍に受光素子2を位置する必要がある。このため、半導体レーザ4を単体で測定するときは、図1(a)に示すように受光素子2を測定ヘッド1上に固定された半導体レーザ4のすぐ真上まで移動して受光させる。続いて、上記半導体レーザ4の代わりに、これよりも大きな半導体レーザユニット5を固定する場合、図1(a)の位置関係では受光素子2と半導体レーザユニット5とが干渉してしまう。そこで、図1(b)に示すように、測定ヘッド1の光軸方向変位手段8を駆動して、上ユニット1aをZ方向に下げる。このとき、半導体レーザユニット5を固定してもこれに受光素子2が干渉しない位置まで上ユニット1aを下げるが、同一条件の測定という観点から、半導体レーザユニット5のアパーチャ、すなわち出射位置を半導体レーザ単体の場合の出射位置関係と等しくなるように、上ユニット1aの変位量を設定することが望ましい。そして、所定位置まで下げた上ユニット1aに半導体レーザユニット5を固定し、半導体レーザユニット5からの出射光を受光する。なお、上記受光ステージ3や光軸方向変位手段8は、ステッピングモータ等を用いて制御演算手段6により駆動制御してもよいし、手動でも構わない。
【0015】
図3は、上記測定装置で計測された電流−光出力特性を示す線図である。ここで、半導体レーザ4単体からの出射光量L1に対する、半導体レーザユニット5のアパーチャからの出射光量L2の比、すなわちL2/L1をカップリング効率といい、本測定で求めるべき重要な基本特性の一つである。この測定結果において、上記のように受光素子2と各測定対象の出射位置との間には一定の位置関係が形成された同一の条件の下に受光処理が行われるので、制御演算手段6により正確なL2/L1等の特性を算出することができる。
【0016】
図4は、本発明の第2実施例を示す斜視図である。同図(a)は単体の半導体レーザ4の測定時、同図(b)は半導体レーザユニット5の測定時を示す。この第2実施例では、光軸方向変位手段8が、測定ヘッド1ではなく受光ステージ3側に設けられている。この光軸方向変位手段8を駆動することにより、受光素子2を保持する受光ステージ3の保持部3aをZ方向に変位する。これによりアーム3bの進退位置が光軸方向に上昇し、半導体レーザユニット5の出射位置へ受光素子2を配置させることができる。以上のように、光軸方向変位手段8は、測定ヘッド1に限らず受光ステージ3に設けてもよく、いずれにしても受光素子2と測定対象との間で、光軸方向における相対的な位置関係を調整できればよいのである。
【0017】
図5は、本発明の第3実施例の構成を示す斜視図である。この第3実施例では、上記光軸方向変位手段8を設けていないが、受光ステージ3に複数のアーム3a及び受光素子2を備えている。各アーム3b,3bの受光素子2,2は光軸方向に所定距離で離れており、光軸方向における異なった複数の測定位置、すなわち測定対象の各出射位置高さに対応している。受光ステージ3からは、その測定対象において求められる高さにある一のアーム3bがY方向に移動され、一の受光素子2を選択的に光軸上へ配置する。図示の例では、下段の受光素子2が単体の半導体レーザ4の測定用で、上段の受光素子2が半導体レーザユニット5の測定用になっている。
【0018】
図6は、本発明の第4実施例を示す斜視図である。第4実施例では、受光ステージ3が、図示しないX方向ステージ上に設置されている。このX方向は、Y方向及びZ方向に直角な方向であり、このようなX方向ステージの駆動により、受光素子2が受光ステージ3ごとX方向に変位可能である。このような構成は、半導体レーザユニット5が、マルチビームの場合、プリズムなどにより光軸を曲げられた場合など、異なる光軸位置に対応する。例えば、図6で示されるように、一の測定対象の有する複数の光軸方向に対して、受光素子2をX方向に変位させ、それぞれの光軸上に移動し各出射光の全体を捉えた計測が可能となる。また、本実施例のように、直交する3方向(X,Y,Z)で変位可能な場合、これらの複合的な移動により受光素子2の空間上の配置は極めて自由度が高い点で有利な形態である。なお、X方向ステージは測定ヘッド1側を変位させるものでもよい。
【0019】
図7は、本発明の第5実施例を示す斜視図である。この第5実施例においては、アーム3bの先端であって、例えば同図のように、受光素子2を取付けたの反対面に、干渉防止手段として位置検出器9を取り付けている。図7中の鎖線で示されるように、上記位置検出器9は受光素子2の進退方向、すなわちアーム3bを伸ばすと、アーム3bの先端及び受光素子2が到達する光軸上に、障害となる物体が存在するか否かを光検知する。位置検出器9には、投光部と受光部を組み合わせたフォトセンサなどを用いることができる。このような位置検出器9を上記制御演算手段6と接続し、位置検出器9からの信号を受光ステージ3や光軸方向変位手段8等の制御に用いる構成となっている。また、障害物が検知されると、上記制御演算手段6を介して警告を発動する構成にしてもよい。
【0020】
上記第5実施例の動作は次のようになる。半導体レーザ4を測定した後、受光素子2は半導体レーザ4に対応する高さからY方向移動により一旦光軸上から退避する。ついで、測定ヘッド1上に半導体レーザユニット5を設置して測定するが、光軸方向変位手段8が駆動されずに、受光素子2が再び光軸上へ移動されると、半導体レーザユニット5に干渉して測定装置及び半導体レーザユニット5を損傷する恐れがある。
【0021】
そこで、上記位置検出器9により、受光素子2の移動先に障害となる物体が有るか否かを常に検知して、受光素子2のY方向移動を中止する。また、受光素子2のZ方向又はX方向の移動においても、その移動範囲に半導体レーザユニット5等の障害物を検知した場合、同様にその移動を中止する。さらに本例では、位置検出器9から得られる信号を光軸方向変位手段8の駆動制御にフィードバックし、受光素子2が測定対象に干渉しない位置まで確実に移動させることもできる。以上のように、位置検出器9を設けることにより大きなユニットである半導体レーザユニット5への衝突が防止されるのみならず、さらには、各出射光位置に合わせるように、それぞれの測定対象から一定距離の上方位置へ受光素子2を配置させるような、受光素子2位置の自動制御も可能である。
【0022】
【発明の効果】
以上の説明で明らかなように、本発明に関わる半導体レーザの特性測定装置は、少なくとも光軸方向における測定対象と受光素子との相対的な位置関係を可変にする光軸方向変位手段を備えた構成なので、半導体レーザと半導体レーザユニットなどの出射位置の異なる測定対象を同一の測定装置で測定でき、また、同一の条件で半導体レーザと半導体レーザユニットからの出射光を測定でき、また特に、電流−光出力特性やカップリング効率を精度よく測定できる半導体レーザの特性測定装置を提供できる。
【図面の簡単な説明】
【図1】本発明に関わる測定装置の第1実施例の構成を示す斜視図で、同図(a)は半導体レーザ単体での測定時、同図(b)は半導体レーザユニットの測定時を示す図である。
【図2】本発明に関わる測定装置の制御構成を示すブロック図である。
【図3】本発明に関わる測定装置で計測された電流−光出力特性を示す線図である。
【図4】本発明の第2実施例を示す斜視図で、同図(a)は半導体レーザ単体での測定時、同図(b)は半導体レーザユニットの測定時を示す図である。
【図5】本発明の第3実施例の構成を示す斜視図である。
【図6】本発明の第4実施例の構成を示す斜視図である。
【図7】本発明の第5実施例の構成を示す斜視図である。
【符号の説明】
1 測定ヘッド
2 受光素子
3 受光ステージ
4 半導体レーザ
5 半導体レーザユニット
8 光軸方向変位手段
9 位置検出器9(干渉防止手段)
Y 受光素子の進退方向
X 受光素子の進退方向及び光軸方向の双方に直角な方向
[0001]
[Technical field to which the invention belongs]
The present invention relates to a characteristic measuring apparatus for a semiconductor laser that receives light emitted from a semiconductor laser or a semiconductor laser unit in which the semiconductor laser and an adjustment lens are integrated.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, as an apparatus for measuring a semiconductor laser, an apparatus for measuring a current-light output characteristic which is a basic characteristic thereof is commercially available. In this type of measuring apparatus, a device that measures the intensity of emitted light by receiving light emitted from the semiconductor laser with a light receiving element while changing the current applied to the semiconductor laser fixed to the measuring head is well known. In general, a light receiving element that has been retracted at the time of non-measurement with respect to a measurement head for fixing a semiconductor laser is moved directly above the semiconductor laser at the time of measurement.
[0003]
On the other hand, semiconductor lasers are also used in light sources used in scanning optical systems and the like that are widely known for various image forming apparatuses such as laser printers and digital copying machines. In general, a so-called semiconductor laser unit in which a semiconductor laser is integrated with an adjustment lens, an aperture, or the like is used for this type of light source. The light emitted from the semiconductor laser is made parallel or slightly divergent or slightly convergent by a coupling lens and shaped by an aperture. Here, the ratio between the amount of light emitted from the semiconductor laser alone and the amount of light emitted from the aperture of the semiconductor laser unit is called coupling efficiency, which is one of the basic characteristics to be evaluated in a system light source such as a scanning optical system. In order to perform accurate evaluation, it is desirable that the measurement of the single semiconductor laser and the measurement of the semiconductor laser unit be performed under the same conditions.
[0004]
[Problems to be solved by the invention]
However, in the conventional measuring apparatus for measuring the current-optical output characteristics of the semiconductor laser, the measurement object is limited to a single semiconductor laser. That is, in the conventional measuring apparatus, the light receiving element can be close to the position of the emission light of the semiconductor laser, but in this case, there is no function to adjust to the position of emission from the aperture of the semiconductor laser unit having a different height. The amount of light emitted from the semiconductor laser unit could not be measured under the same conditions as in the case of a single laser.
[0005]
Therefore, the present invention has been made in view of the current situation as described above, and the object of the present invention is to be able to measure a measurement object having different emission positions, such as a semiconductor laser and a semiconductor laser unit, with the same measurement device. Another object of the present invention is to provide a semiconductor laser characteristic measuring apparatus capable of measuring light emitted from a semiconductor laser and a semiconductor laser unit under the same conditions, and particularly capable of measuring current-light output characteristics and coupling efficiency with high accuracy.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a semiconductor laser characteristic measuring device of the present invention is a device for measuring a characteristic of a semiconductor laser by receiving a light emitted from the measuring target as a single semiconductor laser or a semiconductor laser unit. A measuring head to which the measuring object can be attached; a light receiving element for receiving the emitted light from the measuring object attached to the measuring head; and a direction in which the light receiving element intersects the optical axis of the emitted light. A light receiving stage means for moving back and forth to a measurement position on the optical axis; and an optical axis direction displacing means for changing a relative positional relationship between the measurement object and the light receiving element at least in the optical axis direction. The stage means includes a plurality of light receiving elements, and is characterized in that each light receiving element is held so as to freely advance and retract to different positions in the optical axis direction.
2. The semiconductor laser characteristic measuring apparatus according to claim 1, wherein the light receiving stage means or the optical axis direction displacing means is in the direction perpendicular to both the advancing / retreating direction of the light receiving element and the optical axis direction. The positional relationship between the object and the light receiving element is variable.
3. The semiconductor laser characteristic measuring apparatus according to claim 1, wherein the light receiving stage means includes interference preventing means for detecting whether there is an obstacle in the advancing / retreating direction of the light receiving element. And
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of a semiconductor laser characteristic measuring apparatus to which the present invention is applied will be described below with reference to the drawings.
FIG. 1 is a perspective view showing a configuration of a first embodiment of a measuring apparatus according to the present invention. In these drawings, reference numeral 1 denotes a measuring head to which a measuring object is attached, 2 denotes a light receiving element such as a SiPIN photodiode, 3 denotes a light receiving stage as light receiving stage means, 4 denotes a single semiconductor laser as a measuring object, and 5 denotes a semiconductor laser. 4 is a semiconductor laser unit as a measuring object including 4, and 8 is an optical axis direction displacement means. The semiconductor laser unit 5 is obtained by integrating a coupling lens and an aperture with a single semiconductor laser 4. FIG. 1A shows the measurement of the single semiconductor laser 4, and FIG. 1B shows the measurement of the semiconductor laser unit 5.
[0011]
Further, as shown in FIG. 2, a drive power supply 7 and a light receiving element 2 for applying current / voltage to a measurement target such as the semiconductor laser 4 are connected to the control calculation means 6. In addition to injecting charges into the semiconductor to be measured via the power source 7, the light intensity output from the light receiving element 2 is captured, and various arithmetic processes and drive control of each driving means (for example, the light receiving stage 3) are performed. It is like that.
[0012]
The light receiving stage 3 is composed of a holding unit 3a installed on a surface plate (not shown) so as to hold a certain positional relationship with the measurement head 1 side, and an arm 3b held by the holding unit 3a. The light receiving element 2 is fixed to the tip in a direction facing the measurement target. The arm 3b can move forward and backward in the direction Y perpendicular to the optical axis from the holding portion 3a, and at the time of measurement, by increasing the protruding amount of the arm 3b, a light receiving element is placed on the laser optical axis of the emitted light on the measurement target. When 2 is arranged and measurement is not performed, the light projecting element 2 can be retracted from the optical axis by reducing the protruding amount of the arm 3b.
[0013]
A single semiconductor laser 4 or a semiconductor laser unit 5 can be installed on the measurement head 1 as the measurement object, and the optical axis direction of each emitted light is aligned regardless of which one is installed. In the first embodiment shown in FIG. 1, the measuring head 1 can be divided into upper and lower units 1a and 2a. It is movable in the Z direction along the axial direction. Thus, in the first embodiment, the measuring head 1 is provided with the “optical axis direction displacement means 8”.
[0014]
The measurement procedure by the measuring apparatus having the above configuration is as follows. Since light emitted from the semiconductor laser 4 is divergent light, the light receiving element 2 needs to be positioned in the vicinity of the semiconductor laser 4 in order for the light receiving element 2 to capture all the light. For this reason, when the semiconductor laser 4 is measured alone, the light receiving element 2 is moved to a position just above the semiconductor laser 4 fixed on the measuring head 1 to receive light as shown in FIG. Subsequently, when a semiconductor laser unit 5 larger than this is fixed instead of the semiconductor laser 4, the light receiving element 2 and the semiconductor laser unit 5 interfere with each other in the positional relationship of FIG. Therefore, as shown in FIG. 1B, the optical axis direction displacement means 8 of the measuring head 1 is driven to lower the upper unit 1a in the Z direction. At this time, even if the semiconductor laser unit 5 is fixed, the upper unit 1a is lowered to a position where the light receiving element 2 does not interfere with it. From the viewpoint of measurement under the same conditions, the aperture of the semiconductor laser unit 5, that is, the emission position is set to the semiconductor laser. It is desirable to set the displacement amount of the upper unit 1a so as to be equal to the emission position relationship in the case of a single unit. Then, the semiconductor laser unit 5 is fixed to the upper unit 1a lowered to a predetermined position, and the emitted light from the semiconductor laser unit 5 is received. The light receiving stage 3 and the optical axis direction displacement means 8 may be driven and controlled by the control calculation means 6 using a stepping motor or the like, or may be manually operated.
[0015]
FIG. 3 is a diagram showing current-light output characteristics measured by the measuring apparatus. Here, the ratio of the emitted light amount L2 from the aperture of the semiconductor laser unit 5 to the emitted light amount L1 from the semiconductor laser 4 alone, that is, L2 / L1, is called coupling efficiency, and is one of the important basic characteristics to be obtained in this measurement. One. In this measurement result, the light receiving process is performed under the same conditions in which a certain positional relationship is formed between the light receiving element 2 and the emission position of each measurement object as described above. Accurate characteristics such as L2 / L1 can be calculated.
[0016]
FIG. 4 is a perspective view showing a second embodiment of the present invention. FIG. 4A shows the measurement of the single semiconductor laser 4 and FIG. 4B shows the measurement of the semiconductor laser unit 5. In the second embodiment, the optical axis direction displacing means 8 is provided not on the measuring head 1 but on the light receiving stage 3 side. By driving the optical axis direction displacement means 8, the holding portion 3a of the light receiving stage 3 holding the light receiving element 2 is displaced in the Z direction. As a result, the advance / retreat position of the arm 3 b rises in the optical axis direction, and the light receiving element 2 can be disposed at the emission position of the semiconductor laser unit 5. As described above, the optical axis direction displacing means 8 is not limited to the measurement head 1 and may be provided on the light receiving stage 3. It is only necessary to adjust the positional relationship.
[0017]
FIG. 5 is a perspective view showing the configuration of the third embodiment of the present invention. In the third embodiment, the optical axis direction displacement means 8 is not provided, but the light receiving stage 3 is provided with a plurality of arms 3 a and the light receiving element 2. The light receiving elements 2, 2 of the arms 3b, 3b are separated by a predetermined distance in the optical axis direction, and correspond to a plurality of different measurement positions in the optical axis direction, that is, the heights of the emission positions of the measurement objects. From the light receiving stage 3, one arm 3b at a height required for the measurement object is moved in the Y direction, and one light receiving element 2 is selectively placed on the optical axis. In the illustrated example, the lower light receiving element 2 is used for measuring a single semiconductor laser 4, and the upper light receiving element 2 is used for measuring a semiconductor laser unit 5.
[0018]
FIG. 6 is a perspective view showing a fourth embodiment of the present invention. In the fourth embodiment, the light receiving stage 3 is installed on an X direction stage (not shown). The X direction is a direction perpendicular to the Y direction and the Z direction, and the light receiving element 2 can be displaced in the X direction together with the light receiving stage 3 by driving the X direction stage. Such a configuration corresponds to different optical axis positions, such as when the semiconductor laser unit 5 is a multi-beam and the optical axis is bent by a prism or the like. For example, as shown in FIG. 6, the light receiving element 2 is displaced in the X direction with respect to a plurality of optical axis directions of one measurement object, and moved on the respective optical axes to capture the entire emitted light. Measurement is possible. Further, in the case of being displaceable in three orthogonal directions (X, Y, Z) as in the present embodiment, the arrangement of the light receiving elements 2 in space is advantageous because of their combined movement. It is a form. The X-direction stage may be one that displaces the measuring head 1 side.
[0019]
FIG. 7 is a perspective view showing a fifth embodiment of the present invention. In this fifth embodiment, a position detector 9 is attached as an interference preventing means on the opposite end of the arm 3b, for example, as shown in FIG. As indicated by the chain line in FIG. 7, the position detector 9 obstructs the forward / backward direction of the light receiving element 2, that is, when the arm 3b is extended, on the tip of the arm 3b and the optical axis that the light receiving element 2 reaches. Light detection is performed to determine whether an object exists. The position detector 9 can be a photo sensor that combines a light projecting unit and a light receiving unit. Such a position detector 9 is connected to the control calculation means 6 so that a signal from the position detector 9 is used for controlling the light receiving stage 3, the optical axis direction displacement means 8, and the like. Further, when an obstacle is detected, a warning may be issued via the control calculation means 6.
[0020]
The operation of the fifth embodiment is as follows. After measuring the semiconductor laser 4, the light receiving element 2 is temporarily retracted from the optical axis by moving in the Y direction from the height corresponding to the semiconductor laser 4. Next, the semiconductor laser unit 5 is installed on the measuring head 1 and measurement is performed. When the light receiving element 2 is moved again on the optical axis without driving the optical axis direction displacement means 8, the semiconductor laser unit 5 There is a risk of damaging the measuring device and the semiconductor laser unit 5 due to interference.
[0021]
Therefore, the position detector 9 always detects whether or not there is an obstructing object at the movement destination of the light receiving element 2, and stops the movement of the light receiving element 2 in the Y direction. Further, even when the light receiving element 2 moves in the Z direction or the X direction, when an obstacle such as the semiconductor laser unit 5 is detected in the moving range, the movement is similarly stopped. Furthermore, in this example, the signal obtained from the position detector 9 can be fed back to the drive control of the optical axis direction displacement means 8 so that the light receiving element 2 can be reliably moved to a position where it does not interfere with the measurement object. As described above, the provision of the position detector 9 not only prevents a collision with the semiconductor laser unit 5 which is a large unit, but also provides a constant distance from each measurement target so as to match each outgoing light position. It is also possible to automatically control the position of the light receiving element 2 such that the light receiving element 2 is arranged at a position above the distance.
[0022]
【The invention's effect】
As is apparent from the above description, the semiconductor laser characteristic measuring apparatus according to the present invention includes an optical axis direction displacement unit that varies at least the relative positional relationship between the measurement target and the light receiving element in the optical axis direction. Because of the configuration, measurement objects with different emission positions such as semiconductor laser and semiconductor laser unit can be measured with the same measuring device, and the emitted light from the semiconductor laser and semiconductor laser unit can be measured under the same conditions. -It is possible to provide a semiconductor laser characteristic measuring apparatus capable of measuring optical output characteristics and coupling efficiency with high accuracy.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a configuration of a first embodiment of a measuring apparatus according to the present invention, in which FIG. 1 (a) shows a measurement with a semiconductor laser alone, and FIG. 1 (b) shows a measurement with a semiconductor laser unit. FIG.
FIG. 2 is a block diagram showing a control configuration of a measuring apparatus according to the present invention.
FIG. 3 is a diagram showing current-light output characteristics measured by a measuring apparatus according to the present invention.
FIGS. 4A and 4B are perspective views showing a second embodiment of the present invention, in which FIG. 4A is a diagram showing a measurement with a single semiconductor laser, and FIG. 4B is a diagram showing a measurement with a semiconductor laser unit.
FIG. 5 is a perspective view showing a configuration of a third embodiment of the present invention.
FIG. 6 is a perspective view showing a configuration of a fourth embodiment of the present invention.
FIG. 7 is a perspective view showing a configuration of a fifth embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Measuring head 2 Light receiving element 3 Light receiving stage 4 Semiconductor laser 5 Semiconductor laser unit 8 Optical axis direction displacement means 9 Position detector 9 (interference prevention means)
Y Advancing and retracting direction of light receiving element X A direction perpendicular to both the advancing and retracting direction of the light receiving element and the optical axis

Claims (3)

半導体レーザ単体又は半導体レーザユニットを測定対象とし、該測定対象からの出射光を受光して半導体レーザの特性を測定する装置であって、
上記測定対象を取付け可能な測定ヘッドと、
該測定ヘッドに取付けた上記測定対象からの出射光を受光するための受光素子と、
該受光素子を上記出射光の光軸に交わる方向から上記光軸上の測定位置へ進退させる受光ステージ手段と、
少なくとも光軸方向における上記測定対象と上記受光素子との相対的な位置関係を可変にする光軸方向変位手段と、を備え、
上記受光ステージ手段は、複数の受光素子を備え、各受光素子を光軸方向の異なる位置へ進退自在に保持することを特徴とする半導体レーザの特性測定装置。
An apparatus for measuring a characteristic of a semiconductor laser by taking a semiconductor laser unit or a semiconductor laser unit as a measurement target and receiving light emitted from the measurement target,
A measurement head to which the measurement object can be attached;
A light receiving element for receiving emitted light from the measurement object attached to the measurement head;
A light receiving stage means for moving the light receiving element forward and backward from a direction intersecting the optical axis of the emitted light to a measurement position on the optical axis;
An optical axis direction displacing means for varying a relative positional relationship between at least the measurement object in the optical axis direction and the light receiving element,
The above-mentioned light receiving stage means comprises a plurality of light receiving elements, and holds each light receiving element so as to freely advance and retreat to different positions in the optical axis direction.
上記受光ステージ手段又は上記光軸方向変位手段が、上記受光素子の進退方向及び上記光軸方向の双方に直角な方向で、上記測定対象と受光素子との位置関係が可変であることを特徴とする請求項1に記載の半導体レーザの特性測定装置。The light receiving stage means or the optical axis direction displacement means is characterized in that the positional relationship between the measurement object and the light receiving element is variable in a direction perpendicular to both the advancing / retreating direction of the light receiving element and the optical axis direction. The semiconductor laser characteristic measuring apparatus according to claim 1 . 上記受光ステージ手段、上記受光素子の進退方向に障害物があるか否かを検知する干渉防止手段を備えたことを特徴とする請求項1又は2に記載の半導体レーザの特性測定装置。 3. The semiconductor laser characteristic measuring apparatus according to claim 1 , wherein the light receiving stage means includes interference preventing means for detecting whether or not there is an obstacle in the advancing / retreating direction of the light receiving element.
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