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JP4064189B2 - End face processing method of crystal unit - Google Patents
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JP4064189B2 - End face processing method of crystal unit - Google Patents

End face processing method of crystal unit Download PDF

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Publication number
JP4064189B2
JP4064189B2 JP2002256444A JP2002256444A JP4064189B2 JP 4064189 B2 JP4064189 B2 JP 4064189B2 JP 2002256444 A JP2002256444 A JP 2002256444A JP 2002256444 A JP2002256444 A JP 2002256444A JP 4064189 B2 JP4064189 B2 JP 4064189B2
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Japan
Prior art keywords
crystal
main surface
wafer
crystal piece
inclined surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002256444A
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Japanese (ja)
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JP2004096526A (en
Inventor
弘明 柳下
宣夫 比留間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
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Nihon Dempa Kogyo Co Ltd
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Priority to JP2002256444A priority Critical patent/JP4064189B2/en
Publication of JP2004096526A publication Critical patent/JP2004096526A/en
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Description

【0001】
【発明の属する技術分野】
本発明は、水晶片の端面をベベル等の傾斜面に加工する水晶振動子の端面加工方法を産業上の技術分野とし、特に生産性を向上した端面加工方法に関する。
【0002】
【従来の技術】
(発明の背景)水晶振動子は周波数制御素子として認知され、例えば発振器に組み込まれ周波数や時間の基準源として広く採用されている。一般には、水晶片1の大きさにもよるが振動周波数が概ね30MHz以下程度のものでは、ベベルやコンベックス状の端面加工を施して振動特性を良好に維持している。
【0003】
(従来技術の一例)第4図は一従来例を説明する水晶振動子の図である。
水晶振動子はATカットとした矩形状の水晶片1からなる。そして、長手方向の両端部に傾斜面を設けてなる。一般には、第5図に示したように球形筒体2内に水晶片1と研磨剤3とを投入し、これを回転する。そして、水晶片1の長手方向の両端部を球形筒体2の内径に倣った形状にする。但し、図では簡略して直線上に描いてある。なお、水晶片1の両主面に図示しない電極を形成し、密閉容器内に保持収容されて水晶振動子が構成される。
【0004】
【発明が解決しようとする課題】
(従来技術の問題点)しかしながら、上記構成の端面加工方法では、水晶片1の大きさが小さくなるほど生産性が低下する問題があった。すなわち、近年では小型化が進行し、同一周波数帯の水晶片1自体も小さく加工される。
【0005】
例えば相似の理により振動特性を良好に維持すべく、水晶片1の両端部に同じ曲率半径の傾斜面を形成する場合は、水晶片1の大きさに比例して球形筒体2も小さくなる。したがって、球形筒体2内に投入する水晶片1の枚数が激減する。
【0006】
また、球形筒体2の回転による水晶片1の運動量(移動距離)が小さくなり、加工時間が長くなる。これらにより、球形筒体2を用いた端面加工では生産性の低下する問題があった。そして、加工時間が長くなることによって、バラツキも大きくなる問題があった。
【0007】
(発明の目的)本発明は、生産性を向上してバラツキの小さい水晶振動子の端面加工方法を提供することを目的とする。
【0008】
【課題を解決するための手段】
本発明は、特許請求の範囲(請求項1)に示したように、平板状とした水晶ウェハの一主面にV字状の刃先を当接して前記水晶ウェハを直線状に移動して前記一主面側からのみ研削し、前記水晶ウェハに前記刃先に倣って厚みが除々に小さくなる傾斜面を前記水晶ウェハの一主面の少なくとも一次元方向に形成して前記一次元及び二次元方向に切断し、前記傾斜面を前記一主面の長手方向の一端部して平板状とした複数の水晶片を得た後、前記平板状とした複数の水晶片をバレル研磨して稜線部に丸みを設けたことを特徴とする水晶振動子の端面加工方法とする。このような端面加工方法では、例えばダイシングブレ−ドの刃先を規定の傾斜面にして水晶ウェハに当接すればよいので、加工時間を格段に短くする。以下、本発明の一実施例を説明する。
【0009】
【実施例】
第1図(abc)は本発明の端面加工方法を説明する工程図である。なお、前従来例と同一部分には同番号を付与してその説明は簡略又は省略する。
ここでは、先ず、例えば厚みを83μm(振動周波数が約20MHz)として研磨された直径3インチの水晶ウェハ4を用意する。なお、細線で示した切断線で分割される水晶片1の外形寸法は例えば1.5×1.0mmとする。
【0010】
次に、水晶片1の端面の傾斜面(ベベル面)に合致した、対称角度αを有するダイシングブレードの刃先5を水晶ウェハ4の側面から一次元方向の切り込みに当接する。この場合、厚みの一部を余して当接する。そして、水晶ウェハ4を一次元方向に送って研削(切断)し、各水晶片1の両端部に角度αの傾斜面を設ける。
【0011】
次に、水晶ウェハ4の一次元方向に残された溝底を刃幅の薄いダイシングブレードによって切断するとともに、水晶片1の外形寸法に合わせて二次元方向にも切断する。これにより、複数の水晶片1を得る。そして、このようにして得た水晶片1の多数を例えば図示しないバレル研磨によって稜線部に丸みを設ける。
【0012】
このような加工方法であれば、ダイシングブレードの刃先5を水晶片1の傾斜面に合致させて切断すればよいので、加工時間を大幅に短縮できる。ちなみに、前述の球形筒体2では概ね500枚の水晶片1が投入されて約100時間以上の加工時間を要する。これに対し、本実施例では水晶ウェハ4を機械的に切断するのみなので、バレル研磨含めて約10〜20時間の加工時間で済む。そして、バラツキを小さくできる。また、水晶片1一主面にのみに傾斜面を形成したので加工を容易にする。
【0013】
【他の事項】
上記実施例では、水晶ウェハ4の一次元方向に直接に幅広の刃先5を当接して傾斜面を設けたが、予め表面に切り込みを設けた後に刃先5を当接して切断加工してもよい。この場合、加工量が少ないので切断を容易にする。また、水晶片1の両端部に傾斜面を設けたが、二次元方向(4辺)に設けることができる。
【0014】
また、刃先5の一側を傾斜面として他側を直線上として切断することにより、水晶片1の一端側のみに傾斜面を形成することができ、これらは振動特性に応じて任意に選択できる。また、傾斜面は水晶片1の厚みの一部を残したが、そのまま切断してもよい。但し、破損しやすいので、一部を残して実施例のように垂直に切断した方がよい。
【0015】
また、最終的には刃幅の薄いダイシングブレードによって切断して分割したが、端面加工後に水晶ウェハをエッチング液中に投入して分割してもよい。この場合、両主面にマスクを形成してエッチングしても、マスクを設けることなく直接に投入してもよい。
【0016】
また、例えば刃先5を円弧状として水晶片1の両端部に凹みを有する凹面状に形成することもできる(第3図)。この場合、平坦部からの傾斜が急になるので、エネルギー閉じ込め量が大きくクリスタルインピーダンスの低下が期待できる。要するに、本発明は、水晶片1の端部に刃先5に倣った傾斜面を形成することによって、加工時間を短縮できる。
【発明の効果】
本発明は、平板状とした水晶ウェハの一主面にV字状の刃先を当接して前記水晶ウェハを直線状に移動して前記一主面側からのみ研削し、前記水晶ウェハに前記刃先に倣って厚みが除々に小さくなる傾斜面を前記水晶ウェハの一主面の少なくとも一次元方向に形成して前記一次元及び二次元方向に切断し、前記傾斜面を前記一主面の長手方向の一端部して平板状とした複数の水晶片を得た後、前記平板状とした複数の水晶片をバレル研磨して稜線部に丸みを設けるので、生産性を向上してバラツキの少ない水晶振動子の端面加工方法を提供できる。
【図面の簡単な説明】
【図1】本発明の一実施例を説明する端面加工の工程図である。
【図2】本発明の一実施例による水晶片の図である。
【図3】本発明の他の例を示す水晶片の図である。
【図4】従来例を説明する水晶片の正面図である。
【図5】従来例を説明する球形筒体の図である。
【符号の説明】
1 水晶片、2 球形筒体、3 研磨剤、4 水晶ウェハ、5 刃先.
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an end face processing method for a crystal resonator that processes an end face of a crystal piece into an inclined surface such as a bevel, and more particularly to an end face processing method that improves productivity.
[0002]
[Prior art]
BACKGROUND OF THE INVENTION A crystal resonator is recognized as a frequency control element, and is incorporated in an oscillator, for example, and widely used as a reference source for frequency and time. In general, although depending on the size of the crystal piece 1, when the vibration frequency is about 30 MHz or less, the bevel or convex end face processing is applied to maintain the vibration characteristics well.
[0003]
(Example of Prior Art) FIG. 4 is a diagram of a crystal resonator for explaining one conventional example.
The crystal resonator is composed of a rectangular crystal piece 1 having an AT cut. And an inclined surface is provided in the both ends of a longitudinal direction. In general, as shown in FIG. 5, a crystal piece 1 and an abrasive 3 are put into a spherical cylinder 2 and rotated. Then, both ends in the longitudinal direction of the crystal piece 1 are shaped to follow the inner diameter of the spherical cylindrical body 2. However, it is drawn on a straight line in the figure for simplicity. It should be noted that electrodes (not shown) are formed on both main surfaces of the crystal piece 1 and are held and accommodated in a sealed container to constitute a crystal resonator.
[0004]
[Problems to be solved by the invention]
(Problem of the prior art) However, in the end face processing method having the above-described configuration, there is a problem that productivity decreases as the size of the crystal piece 1 decreases. That is, in recent years, miniaturization has progressed, and the crystal piece 1 itself in the same frequency band is also processed to be small.
[0005]
For example, when the inclined surfaces having the same radius of curvature are formed at both ends of the crystal piece 1 in order to maintain the vibration characteristics satisfactorily by the similar reason, the spherical cylindrical body 2 is also reduced in proportion to the size of the crystal piece 1. . Therefore, the number of crystal pieces 1 to be put into the spherical cylinder 2 is drastically reduced.
[0006]
Further, the momentum (movement distance) of the crystal piece 1 due to the rotation of the spherical cylindrical body 2 becomes small, and the processing time becomes long. For these reasons, there is a problem that productivity is reduced in the end face processing using the spherical cylindrical body 2. And there existed a problem that variation became large when processing time became long.
[0007]
(Object of the Invention) An object of the present invention is to provide a method for processing an end face of a crystal resonator with improved productivity and small variations.
[0008]
[Means for Solving the Problems]
According to the present invention, as shown in the claims (Claim 1), the quartz wafer is moved linearly by abutting a V-shaped cutting edge against one principal surface of the flat quartz wafer. The one- dimensional and two- dimensional directions are formed by grinding only from one main surface side, and forming an inclined surface in the crystal wafer that gradually decreases in thickness following the cutting edge in at least one-dimensional direction of the one main surface of the crystal wafer. cut into the after the inclined surface to obtain a plurality of quartz pieces was flat as a longitudinal end portion of the one main surface, ridge portions a plurality of quartz pieces and the flat and barrel polishing A method for processing an end face of a crystal resonator, characterized in that a rounded surface is provided. In such an end face processing method , for example, the cutting edge of the dicing blade may be brought into contact with the quartz wafer with a specified inclined surface, so that the processing time is remarkably shortened. An embodiment of the present invention will be described below.
[0009]
【Example】
FIG. 1 (abc) is a process diagram for explaining the end face machining method of the present invention. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.
Here, first, a quartz wafer 4 having a diameter of 3 inches and having a thickness of 83 μm (vibration frequency of about 20 MHz) is prepared. In addition, the external dimension of the crystal piece 1 divided | segmented by the cutting line shown by the thin line shall be 1.5 * 1.0 mm, for example.
[0010]
Next, the cutting edge 5 of the dicing blade that matches the inclined surface (bevel surface) of the end face of the crystal piece 1 and has a symmetry angle α is brought into contact with the notch in the one-dimensional direction from the side surface of the crystal wafer 4. In this case, a part of the thickness is left in contact. Then, the crystal wafer 4 is fed in a one-dimensional direction and ground (cut), and inclined surfaces with an angle α are provided at both ends of each crystal piece 1.
[0011]
Next, the groove bottom left in the one-dimensional direction of the crystal wafer 4 is cut by a dicing blade having a thin blade width, and also cut in a two-dimensional direction in accordance with the external dimensions of the crystal piece 1. Thereby, a plurality of crystal pieces 1 are obtained. Then, a large number of crystal pieces 1 obtained in this way are rounded at the ridge line by, for example, barrel polishing (not shown).
[0012]
With such a processing method, the cutting edge 5 of the dicing blade may be cut in conformity with the inclined surface of the crystal piece 1, so that the processing time can be greatly shortened. Incidentally, in the above-described spherical cylindrical body 2, approximately 500 crystal pieces 1 are put in and it takes a processing time of about 100 hours or more. On the other hand, in this embodiment, since the crystal wafer 4 is only mechanically cut, a processing time of about 10 to 20 hours including barrel polishing is sufficient. And variation can be made small. Further, since the inclined surface is formed only on the main surface of the crystal piece 1, the processing is facilitated.
[0013]
[Other matters]
In the above embodiment, the inclined surface is provided by directly contacting the wide cutting edge 5 in the one-dimensional direction of the crystal wafer 4. However, the cutting edge 5 may be contacted and cut after the cut is provided on the surface in advance. . In this case, since the processing amount is small, cutting is facilitated. Moreover, although the inclined surface was provided in the both ends of the crystal piece 1, it can provide in a two-dimensional direction (4 sides).
[0014]
Further, by cutting one side of the blade edge 5 as an inclined surface and the other side as a straight line, an inclined surface can be formed only on one end side of the crystal piece 1, and these can be arbitrarily selected according to vibration characteristics. . Moreover, although the inclined surface left a part of the thickness of the crystal piece 1, it may be cut as it is. However, since it is easy to break, it is better to cut a part vertically as in the embodiment.
[0015]
Moreover, although it finally cut | disconnected and divided | segmented with the dicing blade with a thin blade width | variety, you may divide | segment by putting a crystal wafer in an etching liquid after end surface processing. In this case, even if a mask is formed on both main surfaces and etching is performed, the etching may be performed directly without providing a mask.
[0016]
Further, for example, the cutting edge 5 can be formed in a circular arc shape and can be formed in a concave shape having dents at both ends of the crystal piece 1 (FIG. 3). In this case, since the inclination from the flat portion becomes steep, the amount of energy confinement is large and a reduction in crystal impedance can be expected. In short, the present invention can shorten the processing time by forming an inclined surface following the blade edge 5 at the end of the crystal piece 1.
【The invention's effect】
According to the present invention , a V-shaped cutting edge is brought into contact with one main surface of a flat crystal wafer, the crystal wafer is moved linearly and ground only from the one main surface side, and the cutting edge is applied to the crystal wafer. In accordance with the above, an inclined surface that gradually decreases in thickness is formed in at least one-dimensional direction of one main surface of the crystal wafer, and is cut in the one-dimensional and two-dimensional directions, and the inclined surface is elongated in the longitudinal direction of the one main surface. after obtaining a plurality of quartz pieces and the one end portion and to plate-shaped, since a plurality of quartz pieces and the flat barrel polishing provided rounded ridge portion, less variation to improve the productivity A method of processing an end face of a crystal resonator can be provided.
[Brief description of the drawings]
FIG. 1 is a process chart of end face processing for explaining an embodiment of the present invention.
FIG. 2 is a diagram of a crystal piece according to an embodiment of the present invention.
FIG. 3 is a diagram of a crystal piece showing another example of the present invention.
FIG. 4 is a front view of a crystal piece for explaining a conventional example.
FIG. 5 is a diagram of a spherical cylinder for explaining a conventional example.
[Explanation of symbols]
1 crystal piece, 2 spherical cylinder, 3 abrasive, 4 crystal wafer, 5 cutting edge.

Claims (1)

平板状とした水晶ウェハの一主面にV字状の刃先を当接して前記水晶ウェハを直線状に移動して前記一主面側からのみ研削し、前記水晶ウェハに前記刃先に倣って厚みが除々に小さくなる傾斜面を前記水晶ウェハの一主面の少なくとも一次元方向に形成して前記一次元及び二次元方向に切断し、前記傾斜面を前記一主面の長手方向の一端部して平板状とした複数の水晶片を得た後、前記平板状とした複数の水晶片をバレル研磨して稜線部に丸みを設けたことを特徴とする水晶振動子の端面加工方法。A V-shaped cutting edge is brought into contact with one main surface of a flat crystal wafer, the crystal wafer is moved linearly, and is ground only from the one main surface side. Is formed in at least one-dimensional direction of one main surface of the quartz wafer and cut in the one-dimensional and two-dimensional directions, the inclined surface is one end in the longitudinal direction of the one main surface A method of processing an end face of a crystal resonator, comprising: obtaining a plurality of crystal pieces in a flat plate shape, and then barrel-polishing the plurality of crystal pieces in a flat plate shape to provide roundness in a ridge line portion.
JP2002256444A 2002-09-02 2002-09-02 End face processing method of crystal unit Expired - Fee Related JP4064189B2 (en)

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JP4064189B2 true JP4064189B2 (en) 2008-03-19

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