JP4066911B2 - Semiconductor device manufacturing method and semiconductor element mounting structure forming method - Google Patents

Description

The present invention relates to a method of forming a manufacturing method and a semiconductor device mounting structure of the binding to adult Ru semiconductors device reinforcing member via a resin adhesive to the laminated structure of repeated semiconductor device.

As a form of mounting a bumped semiconductor element having a bump formed on the lower surface, a method of stacking a semiconductor element on a bumped package substrate, a bumped mother chip or the like to form a semiconductor device having a laminated structure is known. (For example, Patent Document 1). In recent years, thinning of semiconductor elements has been progressing rapidly, and when thin semiconductor elements are used in a semiconductor device having the above-described configuration, the semiconductor elements are sealed from the upper surface in order to prevent damage to the semiconductor elements. The protection method is used.
JP 11-214419 A

  However, in the method of sealing the semiconductor element from the upper surface as described above, the lower package substrate and the mother chip are likely to be warped and deformed. In some cases, it was difficult to ensure mounting reliability. This tendency was particularly remarkable when a thin semiconductor element was used as the mother chip.

The present invention aims to provide a method of forming a manufacturing method and a semiconductor device mounting structure of the high have semi conductor device mounting reliability.

Method of manufacturing a semi-conductor device of the present invention, the third electrode to the first semiconductor element and one surface of the second electrode has a plurality of formed on a surface of the first electrode is formed with a plurality of other on one surface A plurality of semiconductor elements are stacked to form a stacked structure, and the third electrode is disposed in the first semiconductor element 1 with the other surface of the first semiconductor element 1 facing the one surface of the second semiconductor element. And a semiconductor device having a configuration in which an integral reinforcing member is coupled to the other surface of the first semiconductor element and the other surface of the second semiconductor element via a resin adhesive. A method of manufacturing a semiconductor device, wherein the resin adhesive is applied to the reinforcing member coupled to the laminated structure, the laminated structure is mounted on the reinforcing member to which the resin adhesive is applied, and then the Heating the combined body of reinforcing member and laminated structure It is intended to thermally cure the resin adhesive Te.

Method of forming a semi-conductor element mounting structure of the present invention, first the first semiconductor element 1 connection electrodes plurality electrodes has a second electrode formed in plural on the other surface formed with a plurality of on one surface The first semiconductor element is mounted on the formed substrate to electrically connect the first electrode to the connection electrode, and a second semiconductor element having a plurality of third electrodes formed on one surface. And an integrated reinforcing member is coupled to the other surface of the first semiconductor element and the other surface of the second semiconductor element via a resin adhesive. A semiconductor element mounting structure forming method for forming a semiconductor element mounting structure having a configuration, wherein the first semiconductor element is mounted on the substrate, and a resin adhesive is applied to a back surface of the first semiconductor element, The second semiconductor element is mounted on the resin-coated surface of the first semiconductor element. A resin adhesive is applied to the upper surface of the second semiconductor element, the reinforcing member is mounted on the resin application surface of the second semiconductor element, and then the substrate is heated to thermally cure the resin adhesive It is.

According to the present invention, the resin adhesive is applied to the other surface of the first semiconductor element 1 and the other surface of the second semiconductor element in the stacked structure in which the first semiconductor element 1 and the second semiconductor element are stacked. By adopting a configuration in which the integral reinforcing member is coupled through the thin member, even when a thin semiconductor element is used, the reinforcing member protects the semiconductor element from external force and suppresses warping deformation of the semiconductor element. method of forming a manufacturing method and a semiconductor device mounting structure of the high have semi conductor device mounting reliability can be realized.

(Embodiment 1)
1 and 2 are process explanatory views of the method for manufacturing a semiconductor device according to the first embodiment of the present invention, and FIG. 3 is a partial cross-sectional view of the semiconductor device according to one embodiment of the present invention.

  In FIG. 1A, a plurality of first electrodes 2 are formed on the circuit forming surface 1a (one surface) of the first semiconductor element 1, and the second surface is formed on the back surface 1b (the other surface). A plurality of electrodes 3a and 3b are formed. The first semiconductor element 1 is a thin semiconductor element having a thickness of 100 μm or less. The second electrode 3a penetrates the first semiconductor element 1 and is electrically connected to a circuit electrode formed on the circuit forming surface 1a side.

  As shown in FIG. 1B, the first semiconductor element 1 includes a second semiconductor element 4 in which a plurality of bumps 5 (third electrodes) are formed on a circuit formation surface 4a (one surface). The first semiconductor element 1 is mounted by the mounting head 6 with the back surface 1b of the first semiconductor element 1 and the circuit forming surface 4a of the second semiconductor element 4 facing each other. Similar to the first semiconductor element 1, the second semiconductor element 4 is a thin semiconductor element having a thickness of 100 μm or less. By connecting the bumps 5 to the second electrodes 3a and 3b, the first semiconductor element 4 is formed. 1 is implemented. Thereby, as shown in FIG.1 (c), the laminated structure 7 which piled up the 1st semiconductor element 1 and the 2nd semiconductor element 4 is formed. As a mounting method of the second semiconductor element 4, either ultrasonic bonding or thermocompression bonding may be used.

  Thereafter, as shown in FIG. 1 (d), a resin adhesive 9 is applied by a dispenser 10 on the upper surface of the bumper member 8 coupled to the laminated structure 7. The bumper member 8 has a function as a reinforcing member that prevents deformation of the thin first semiconductor element 1 and the second semiconductor element 4 by being coupled to the laminated structure 7. The material may be ceramic, resin, or metal, and a material processed to have a thickness necessary and sufficient to ensure the rigidity necessary to prevent deformation of the laminated structure 7 is used. Note that ceramic or metal is desirable in terms of high rigidity.

  The resin adhesive 9 has a composition in which a particulate filler component made of an inorganic substance or a resin is contained in a resin component mainly composed of an epoxy resin or the like. As the resin component, either a thermosetting resin or a thermoplastic resin may be used. Here, the filler component has a function between the semiconductor element 2 and the bumper member 8 in addition to the original function of the filler for imparting a desired characteristic (elastic modulus) to the adhesive layer in a state where the resin adhesive 9 forms the adhesive layer. It also has a function as a spacer that intervenes in and secures the thickness of the adhesive layer to a predetermined thickness.

  For this reason, the resin adhesive 9 contains two kinds of fillers, a first filler and a second filler, which will be described below, at a content such that the total content is 30% by weight or less. First, the first filler 9a that functions as the spacer described above is a particle having a diameter d that is approximately equal to the target thickness t (see FIGS. 2B and 3) of the adhesive layer in the semiconductor device. The diameter d is the maximum diameter in the filler contained in the resin adhesive 9. That is, the first filler 9a has a diameter d that is the maximum diameter of the filler contained in the resin adhesive 9 and that is approximately equal to the predetermined thickness of the adhesive layer. The second filler 9b other than the first filler 9a is a set of fillers having a diameter smaller than the diameter d of the first filler 9b, and is selected to have a particle size distribution suitable for the original function of the filler.

Next, as shown in FIG. 2A, the laminated structure 7 is mounted on the bumper member 8 after application of the adhesive. At this time, the stacked structure 7 in the state shown in FIG. 1C is reversed and mounted so that the back surface 1 b of the first semiconductor element 1 and the back surface 4 b of the second semiconductor element 4 face the resin adhesive 9. To do. Then, as shown in FIG. 2 (b), by heating the combined body in which the bumper member 8 and the laminated structure 7 are integrated to thermally cure the resin adhesive 9, the circuit forming surface 1a (one surface) is A first semiconductor element 1 in which a plurality of one electrodes 2 are formed and a plurality of second electrodes 3a and 3b are formed on a back surface 1b (the other surface), and a bump 5 (third surface) on a circuit forming surface (one surface). The semiconductor device 11 having a stacked structure is completed by overlapping the second semiconductor element 4 having a plurality of electrodes).

  The semiconductor device 11 connects the bumps 5 to the second electrodes 3a and 3b with the back surface 1b of the first semiconductor element 1 and the circuit forming surface 4a of the second semiconductor element 4 facing each other, The integrated bumper member 8 is coupled to the back surface 1b of the first semiconductor element 1 and the back surface 4b of the second semiconductor element via the resin adhesive 9.

  When the laminated structure 7 and the bumper member 8 are coupled, the semiconductor element 2 is mounted on the bumper member 8 through the resin adhesive 9 including the first filler 9a as described above and pressed against the bumper 8 with a predetermined pressure. Then, as shown in FIG. 3, the first filler 9 a having the maximum diameter among the fillers in the resin adhesive 9 is sandwiched between the back surface of the semiconductor element 4 and the bumper member 8. Thereby, the thickness t of the adhesive layer becomes equal to the diameter d of the first filler 9a.

  When the semiconductor device 11 formed in this way is used as a bumped part, as shown in FIG. 2C, the solder ball 12 is mounted on the first electrode 2 by the ball transfer head 13, Next, as shown in FIG. 2 (d), the solder ball 12 is melted by heating the semiconductor device 11 in the reflow process, and a solder bump 12 a is formed on the first electrode 2.

  Since the semiconductor device 11 formed in this way has a structure in which two layers of semiconductor elements are stacked, it can be mounted at a high density, and the first semiconductor element 1 and the second thin film are formed to form a stacked structure. Since the semiconductor element 4 is used, the thickness of the semiconductor device 11 can be reduced as much as possible. And since the structure which reinforces the laminated structure which consists of a thin semiconductor element which is easy to bend and breaks with the bumper member 8, a laminated structure can be effectively protected from external force.

  In the mounting structure in which the semiconductor device 11 with bumps is mounted on the substrate via the solder bumps 12a, when the substrate is deformed by some external force after mounting, the first semiconductor element 1 and the second semiconductor element 11 Since the semiconductor elements 4 are all thin and flexible, and the resin adhesive 9 is easily deformed, the first semiconductor element 1, the second semiconductor element 4 and the resin adhesive 9 follow the deformation of the substrate. And deform. Therefore, it is possible to reduce the stress generated in the joint portion of the solder bump 12a due to the bending deformation of the substrate, and to improve the reliability after mounting.

(Embodiment 2)
4 and 5 are process explanatory views of the method of manufacturing the semiconductor device according to the second embodiment of the present invention. In the present embodiment, when the semiconductor device 11 having the configuration shown in the first embodiment is manufactured, a large number of the first semiconductor elements 1 are incorporated in place of the first semiconductor element 1 in the individual state. It is intended for semiconductor wafers. In FIG. 4A, a plurality of first electrodes 102 are formed on the circuit forming surface 101a (first surface) of the semiconductor wafer 101, and a plurality of second electrodes 103a and 103b are formed on the back surface 101b. Is formed. The semiconductor wafer 101 is a semiconductor wafer in which a thin semiconductor element having a thickness of 100 μm or less is formed. The second electrode 103a penetrates the semiconductor wafer 101 and is electrically connected to a circuit electrode formed on the circuit forming surface 101a side.

As shown in FIG. 4B, the second semiconductor element 4 having a plurality of bumps 5 (third electrodes) formed on the circuit formation surface 4 a is formed on the semiconductor wafer 101 with the back surface 101 b of the semiconductor wafer 101 and the second semiconductor element 101. The semiconductor head 4 is mounted by the mounting head 6 so as to face the circuit forming surface 4 a of the semiconductor element 4. Similar to the semiconductor wafer 101, the second semiconductor element 4 is a thin semiconductor element having a thickness of 100 μm or less. By connecting the bump 5 to the second electrodes 103a and 103b, the second semiconductor element 4 is connected to each semiconductor element of the semiconductor wafer 101. Implemented. As a result, as shown in FIG. 4C, a laminated structure 107 in a wafer state in which the semiconductor wafer 101 and the second semiconductor element 4 are overlaid is formed.

  Thereafter, as shown in FIG. 1 (d), the resin adhesive 9 shown in the first embodiment is applied to the upper surface of the bumper member 108 coupled to the laminated structure 107 by the dispenser 10. Instead of applying the resin adhesive 9, a method may be used in which a resin sheet obtained by forming a resin adhesive having the same composition into a thin film is attached to the bumper member.

  Next, as shown in FIG. 5A, the laminated structure 107 is mounted on the bumper member 8 after application of the adhesive. At this time, the laminated structure 107 in the state shown in FIG. 4C is reversed and mounted so that the back surface 101b of the semiconductor wafer 101 and the back surface 4b of the second semiconductor element 4 face the resin adhesive 9. Then, as shown in FIG. 2B, the bumper member 108 and the laminated structure 107 are heated to thermally cure the resin adhesive 9, thereby completing the semiconductor device 111. At this time, the gap between the first semiconductor element 4 and the bumper member 108 is maintained at a predetermined thickness t by the first filler 9a in the resin adhesive 9 as in the first embodiment.

  Thereafter, the semiconductor device 111 is sent to a dicing process, and as shown in FIG. 5C, the semiconductor device 111 is cut into individual pieces of semiconductor elements by the blade 17 as shown in FIG. In addition, a first semiconductor element 1 having a plurality of first electrodes formed on one surface and a plurality of second electrodes formed on the other surface and a second semiconductor device having a plurality of third electrodes formed on one surface A semiconductor device 111a having a stacked structure in which semiconductor elements are stacked is completed. When the semiconductor device 111a formed in this way is used as a component with bumps, the first electrode is obtained through the bump formation step shown in FIGS. 2C and 2D of the first embodiment. Solder bumps are formed on 2.

(Embodiment 3)
6 and 7 are process explanatory diagrams of the mounting process in the semiconductor mounting structure according to the third embodiment of the present invention. In the third embodiment, a mounting structure having the same configuration as the mounting structure in which the semiconductor device 11 shown in the first embodiment is mounted on a substrate is realized by directly mounting individual semiconductor elements on the substrate. .

  In FIG. 6A, a plurality of connection electrodes 16 are formed on the upper surface of the substrate 15. A first semiconductor element 1 similar to that shown in the embodiment is mounted on the substrate 15. A plurality of first electrodes 2 are formed on the circuit formation surface 1a (first surface) of the first semiconductor element 1, and a plurality of second electrodes 3a and a plurality of second electrodes 3b are formed on the back surface 1b. In addition, solder bumps 14 are formed on the first electrode 2. The first semiconductor element 1 is a thin semiconductor element having a thickness of 100 μm or less. The second electrode 3a penetrates the first semiconductor element 1 and is electrically connected to a circuit electrode formed on the circuit forming surface 1a side.

  As shown in FIG. 6B, the solder bumps 14 are joined to the connection electrodes 16, and then, as shown in FIG. 6C, the resin adhesive 9 is applied to the back surface 1b of the first semiconductor element 1. It is applied by the dispenser 10. Next, as shown in FIG. 6D, the second semiconductor element 4 having a plurality of bumps 5 (third electrodes) formed on the circuit forming surface is mounted on the resin-coated surface of the first semiconductor element 1. Then, as shown in FIG. 7A, the bump 5 is connected to the second electrodes 3a and 3b.

7B, after that, the resin adhesive 9 is applied by the dispenser 10 so as to cover the upper surface of the second semiconductor element 4, and then on the application surface of the resin adhesive 9 as shown in FIG. 7C. The bumper member 8 is mounted. Then, by heating the substrate 15 and thermosetting the resin adhesive 9, the semiconductor element mounting structure is completed as shown in FIG. At this time, the gap between the first semiconductor element 4 and the bumper member 8 is maintained at a predetermined thickness t by the first filler 9a in the resin adhesive 9 as in the first embodiment.

  This semiconductor element mounting structure is a first semiconductor in which a plurality of first electrodes 2 are formed on a circuit forming surface 1a (one surface) and a plurality of second electrodes 3a, 3b are formed on a back surface 1b (the other surface). The element 1 is mounted on a substrate 15 on which a plurality of connection electrodes 16 are formed, and the first electrode 2 is electrically connected to the connection electrodes 15 via the bumps 14 to form a circuit forming surface 4a (one surface). The second semiconductor element having a plurality of bumps 5 (third electrodes) formed thereon is stacked on the first semiconductor element 1 and mounted.

  In this semiconductor element mounting structure, an integral reinforcing member 8 is coupled to the other surface of the first semiconductor element 1 and the other surface of the second semiconductor element 4 via a resin adhesive 9. As described in the first embodiment, the mounting reliability can be improved by reducing the stress in the thermal cycle process after mounting.

Method of forming a manufacturing method and a semiconductor device mounting structure of the semi-conductor device of the present invention, by suppressing the warping deformation of the semiconductor device to protect the semiconductor element from external force by the reinforcing member in cases of using a thin semiconductor element A semiconductor device and a semiconductor having an advantage that a semiconductor device and a semiconductor element mounting structure with high mounting reliability can be realized, and a reinforcing member is bonded to a laminated structure in which semiconductor elements are stacked via a resin adhesive This is useful in an element mounting structure.

Process explanatory drawing of the manufacturing method of the semiconductor device of Embodiment 1 of this invention Process explanatory drawing of the manufacturing method of the semiconductor device of Embodiment 1 of this invention The fragmentary sectional view of the semiconductor device of one embodiment of the present invention Process explanatory drawing of the manufacturing method of the semiconductor device of Embodiment 2 of this invention Process explanatory drawing of the manufacturing method of the semiconductor device of Embodiment 2 of this invention Process explanatory drawing of the mounting process in the semiconductor mounting structure of Embodiment 3 of this invention Process explanatory drawing of the mounting process in the semiconductor mounting structure of Embodiment 3 of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 1st semiconductor element 2,102 1st electrode 3a, 3b, 103a, 103b 2nd electrode 4 2nd semiconductor element 5 Bump 7, 107 Laminated structure 8, 108 Bumper member 9 Resin adhesive material 11, 111 Semiconductor Device 14 Solder Bump 15 Substrate 16 Connection Electrode

Claims (2)

A first semiconductor element in which a plurality of first electrodes are formed on one surface and a plurality of second electrodes are formed on the other surface is overlapped with a semiconductor element in which a plurality of third electrodes are formed on one surface. The third electrode is connected to the second electrode with the other surface of the first semiconductor element 1 and the one surface of the second semiconductor element facing each other, and the first electrode is connected to the second electrode. A semiconductor device manufacturing method for manufacturing a semiconductor device having a configuration in which an integral reinforcing member is coupled to the other surface of the semiconductor element and the other surface of the second semiconductor element via a resin adhesive,
The resin adhesive is applied to the reinforcing member coupled to the laminated structure, the laminated structure is mounted on the reinforcing member to which the resin adhesive is applied, and then the reinforcing member and the laminated structure are integrated. A method for manufacturing a semiconductor device, comprising: heating a bonded body to thermally cure the resin adhesive. A first semiconductor element 1 having a plurality of first electrodes formed on one surface and a plurality of second electrodes formed on the other surface is mounted on a substrate on which a plurality of connection electrodes are formed, and the first electrode is mounted. Is electrically connected to the connection electrode, and has a stacked structure in which a second semiconductor element having a plurality of third electrodes formed on one surface is mounted over the first semiconductor element. A semiconductor element mounting structure for forming a semiconductor element mounting structure in which an integral reinforcing member is coupled to the other surface of the first semiconductor element and the other surface of the second semiconductor element through a resin adhesive. A forming method of
Mounting the first semiconductor element on the substrate, applying a resin adhesive on the back surface of the first semiconductor element, and mounting the second semiconductor element on the resin-coated surface of the first semiconductor element; Applying a resin adhesive on the upper surface of the second semiconductor element, mounting the reinforcing member on the resin application surface of the second semiconductor element, and then heating the substrate to thermally cure the resin adhesive; A method of forming a semiconductor device mounting structure characterized by the above.

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