JP4080793B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus, and more particularly, is suitably used in a manufacturing process of a display device such as a liquid crystal display (LCD), particularly in a process using high-density plasma such as a dry etching process, an ashing process, and a cleaning process. The present invention relates to a plasma processing apparatus capable of performing plasma processing over a large area by using inductively coupled plasma.
[0002]
[Prior art]
In recent years, with an increase in the size and productivity of a display device such as a liquid crystal display device (LCD), a substrate (object to be processed) subjected to plasma processing is also increased in size and is becoming about a meter square or more. Along with this trend, it is necessary to cope with an increase in the size of a substrate even in a plasma processing apparatus that performs processing such as dry etching, ashing, and cleaning on the substrate.
These plasma processing apparatuses often require high-density plasma for performance reasons. As a plasma source for generating a high-density plasma, an inductively coupled plasma source is advantageous in terms of simple structure and cost.
[0003]
As such a high-density plasma processing apparatus, for example, a plasma processing apparatus that performs processes such as etching and ashing in a production line of a liquid crystal display device, a high-density plasma processing apparatus using a flat coil antenna is often used. (See, for example, US Pat. No. 4,948,458).
FIG. 10 is a schematic configuration diagram showing an example of a coil antenna of a conventional high-density plasma processing apparatus. In the figure, reference numeral 1 is a planar coil antenna, and 2 is connected to one end of the planar coil antenna 1. The matching box (MB): 3 is a high-frequency power source connected to the matching box 2, and the other end of the planar coil antenna 1 is set to the ground potential.
[0004]
In this plasma processing apparatus, the number of turns of the planar coil antenna 1 is set according to the plasma density on the substrate, and the size thereof is the size of the substrate to ensure the uniformity of the plasma density on the substrate. It is said to be larger than this.
Here, the high-frequency power is fed from one end of the planar coil antenna 1 by the high-frequency power source 3 and the current flowing through the planar coil antenna 1 when the other end is set to the ground potential is I. Assuming that the angular frequency of power is ω and the self-inductance of the planar coil antenna 1 is L, the potential of the power feeding unit is represented by ω · L · I. Here, the frequency of the applied high-frequency power is 13.56 MHz, the self-inductance L of the planar coil antenna 1 is 4 μH, and the current I flowing through the planar coil antenna 1 is 30 A. _rms Then, the 0-Peak potential V of the power feeding unit _0-P Becomes a high voltage of 14.5 kV.
[0005]
In such a plasma processing apparatus, as the substrate size increases, the planar coil antenna also increases in size, increasing the impedance, and the potential of the power feeding unit becomes a high voltage. In addition, when the planar coil antenna is increased in size, in order to obtain a plasma density required for processing, a power density higher than a certain level is necessary. Become.
[0006]
When the voltage of the power feeding unit becomes a high voltage, there are the following disadvantages.
(1) There is a high possibility of local damage of the dielectric window.
When the potential of the planar coil antenna 1 is increased, the electric field coupling component with the plasma is increased, and the electric field in front of the dielectric window is strengthened (V _dc The dielectric window is ion sputtered and damaged. In particular, when quartz is used as the material of the dielectric window and a gas containing fluorine is introduced into the chamber, the damage becomes large.
(2) The spatial distribution of the etching / ashing amount on the substrate may be deteriorated.
When the antenna potential is increased, the electric field coupling component near the power feeding section increases, inductive coupling is maintained in the portion where the potential is not high, the uniformity of the plasma density in the plane or the potential distribution deteriorates, etching, ashing, etc. The uniformity of is impaired.
(3) It is necessary to improve the withstand voltage of the matcher and antenna support.
Therefore, it is essential to reduce the impedance of the planar coil antenna.
[0007]
As a method of reducing the antenna impedance, there is a method of arranging coils in parallel, for example, a method of parallelizing linear coils (for example, US Pat. No. 5,589,737). In this method, a capacitor is connected to a linear coil, and the amount and phase of the current flowing through each coil are controlled to be the same by matching the respective impedances, so that the plasma uniformity is maintained.
As another method, a plurality of capacitors are inserted into a coiled antenna in which the terminals are close to each other to form an LC series circuit, and the series antenna resonates to reduce the impedance of the entire antenna and reduce the voltage between the terminals. Have also been proposed (for example, JP-A-10-7010).
[0008]
[Problems to be solved by the invention]
By the way, the conventional method of paralleling linear coils is beneficial, but today, when the board size is increased to a meter square, it is necessary to adjust the capacity of a large number of capacitors, and the controllability is lacking. was there.
Further, in the conventional method of forming an LC series circuit, a standing wave is generated in the coil antenna due to series resonance, a strong current flows locally, and the plasma density increases only at that position. Therefore, when this method is applied to a planar coil antenna, there is a problem in that the in-plane uniformity of processing is lowered.
[0009]
The present invention has been made in view of the above circumstances, and the potential of the power feeding portion is low, the in-plane uniformity of the plasma processing is excellent, the controllability is excellent, and a large area plasma processing is possible. An object of the present invention is to provide a plasma processing apparatus.
[0010]
[Means for Solving the Problems]
In order to solve the above problems, the present invention provides the following plasma processing apparatus.
That is, the plasma processing apparatus according to claim 1 is a container having a controllable internal pressure, a gas supply means for supplying a processing gas into the container, and a target to be processed on one main surface provided in the container. A first electrode on which an object is placed and a second electrode disposed opposite to the first electrode, and plasma is generated by applying high-frequency power between the first and second electrodes. In the plasma processing apparatus for processing the object to be processed, the second electrode includes a planar coil antenna having a plurality of coils arranged in parallel and one or more connected in series to each of the coils. A plurality of assembly antennas, each of which is provided with a capacitor and surrounded by a conductive material having a ground potential, are arranged on the same plane independently of each other. High-frequency power distribution means for distributing high-frequency power is connected, a high-frequency power source is connected to the high-frequency power distribution means, For high frequency power supply Is Phase control means to control the phase is connected The high-frequency power distribution means is composed of a plurality of capacitance variable capacitors arranged in parallel, and these capacitance variable capacitors are connected in series or in parallel to the plurality of aggregate antennas, respectively. And adjusting means for measuring the high-frequency current value of the collective antenna to which it is connected and adjusting the capacitance based on the measurement result. It is characterized by that.
According to a second aspect of the present invention, there is provided a plasma processing apparatus comprising: a container whose internal pressure can be controlled; a gas supply means for supplying a processing gas into the container; and a workpiece to be processed on one main surface provided in the container. A first electrode to be placed; and a second electrode disposed opposite to the first electrode, and applying high frequency power between the first and second electrodes to generate plasma to generate the plasma In the plasma processing apparatus for processing an object to be processed, the second electrode includes a planar coil antenna in which a plurality of coils are arranged in parallel, and one or more capacitors connected in series to each of the coils. And a plurality of assembly antennas surrounded by a conductive material having a ground potential are arranged on the same plane independently of each other, and each of the plurality of assembly antennas High-frequency power distribution means for distributing high-frequency power is connected, a high-frequency power source is connected to the high-frequency power distribution means, For high frequency power supply Zhou Frequency control means to control the wave number is connected The high-frequency power distribution means is composed of a plurality of capacitance variable capacitors arranged in parallel, and these capacitance variable capacitors are connected in series or in parallel to the plurality of aggregate antennas, respectively. And adjusting means for measuring the high-frequency current value of the collective antenna to which it is connected and adjusting the capacitance based on the measurement result. It is characterized by that.
[0011]
Claim 3 The plasma processing equipment of Claim 1 or 2 In the plasma processing apparatus, the self-inductance (L) of the coil and the capacitance (C) of the capacitor are set so as not to cause LC series resonance.
[0017]
Claim 4 The plasma processing equipment of Any one of claims 1 to 3 In the plasma processing apparatus, the plurality of assembly antennas are characterized in that winding directions of coils of the assembly antennas adjacent to each other are opposite to each other.
[0020]
In the plasma processing apparatus of the present invention, the second electrode includes a planar coil antenna formed by arranging a plurality of coils in parallel, and one or more capacitors connected in series to each of the coils. By using the body antenna, an increase in reactance component due to the self-inductance of the coil antenna is reduced by the capacitor. Thereby, it becomes possible to reduce the electric potential of the feeding part of the coil antenna.
[0021]
In addition, by arranging a plurality of the collective antennas on the same plane, a large-area workpiece is covered by the collective antennas. The potential can be reduced.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the plasma processing apparatus of the present invention will be described with reference to the drawings.
[First Embodiment]
FIG. 1 is a block diagram showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention, FIG. 2 is a block diagram showing an assembly antenna (second electrode) of the plasma processing apparatus, and FIG. It is explanatory drawing which shows the aspect of the electric potential reduction of a body antenna.
[0023]
The plasma processing apparatus is, for example, a dry etching apparatus that performs a dry etching process in a manufacturing process of a display device such as a liquid crystal display (LCD), and a metal vacuum vessel 11 in which the internal pressure can be controlled, and a vacuum vessel 11, a dielectric window 12 that transmits electromagnetic waves, a vacuum pump 13 that evacuates the vacuum vessel 11 and maintains a desired degree of vacuum, for example, about 0.1 to 100 Pa, and a vacuum vessel 11. (First) electrode 14 made of a conductive material such as aluminum on which the substrate (object to be processed) S is placed on the upper surface (one main surface) 14a, and above the dielectric window 12 facing the electrode 14 The assembly antenna (second electrode) 15 disposed and the RF shield 16 made of a metal conductive material such as aluminum covering the assembly antenna 15 are configured.
[0024]
The dielectric window 12 transmits the electromagnetic wave radiated from the collective antenna 15 and radiates it into the vacuum vessel 11 and is made of a dielectric material such as quartz.
A processing gas introduction port 21 for introducing a processing gas into the vacuum vessel 11 is formed on the side surface of the vacuum vessel 11, and the processing gas introduction port 21 is a gas for supplying the processing gas into the vacuum vessel 11. It is connected to supply means (not shown).
Also, a bias matching box (MB) 22 is connected to the electrode 14, and a high frequency power source 23 that oscillates a high frequency of about 1 to 100 MHz is connected to the matching box 22. .
[0025]
The collective antenna 15 emits electromagnetic waves into the vacuum vessel 11 to excite and generate plasma. As shown in FIG. 2, for example, a pair of coils 31a and 31b made of a conductive material such as aluminum are connected to each other. It is comprised by the planar coil antenna 31 arrange | positioned in parallel, and the capacitors 34a and 34b connected in series to the one end part of each coil 31a and 31b. One end of each of these coils 31a and 31b is set to ground potential via capacitors 34a and 34b.
A matching box (M.B .: matching unit) 32 is connected to the other end of each of the coils 31a and 31b. A high frequency power source 33 that oscillates a high frequency of about 0.4 to 20 MHz is connected to the matching box 32. It is connected.
[0026]
In order to perform a dry etching process during the manufacturing process of a display device such as a liquid crystal display (LCD) using this plasma processing apparatus, a vacuum degree inside the vacuum vessel 11 using a vacuum pump 13 is set, for example, 0.1. After exhausting to about ~ 100 Pa, a dry etching gas is introduced from the processing gas inlet 21, and a high frequency of about 1 to 100 MHz is applied to the coil antenna 31 by the high frequency power supply 33.
At this time, electromagnetic waves are radiated from the coil antenna 31 through the dielectric window 12 into the vacuum vessel 11, and plasma is generated in the vacuum vessel 11. The dry etching gas is dissociated in the plasma and becomes a chemically active radical to subject the substrate S to dry etching.
[0027]
At this time, the potential V of the feeding portion of the coil antenna 31 is _{0-P '} Is the current flowing through the coil antenna 31 when the coil antenna 31 is fed with high-frequency power by the high-frequency power source 33, the angular frequency of the applied high-frequency power is ω, the self-inductance of the coil antenna 31 is L, and the capacitors 34a, 34b The capacitance of C ₂ Then, it is expressed by the following formula.
V _{0-P '} = {Ω · L-1 / (ω · C ₂ )} ・ I …… (1)
[0028]
Since the coil antenna 31 has a configuration in which a pair of coils 31a and 31b are arranged in parallel with each other, the impedance of the coil antenna 31 is reduced only to about 60 to 80% because there is mutual inductance M.
Capacitors 34a and 34b are connected in series to the other end of each of the coils 31a and 31b so as to have a ground potential. Therefore, as shown in FIG. _{0-P '} Can be reduced.
[0029]
For example, the angular frequency ω of the high frequency power to be applied is 13.56 MHz, the self-inductance L of the coil antenna 31 is 4 μH, the capacities of the capacitors 34 a and 34 b are 150 pF, and the current flowing through the coil antenna 31 is 30 A. _rms Then, the potential V of the feeding portion of the coil antenna 31 _{0-P '} Is 7.8 kV, compared to the case where the coils 31a and 31b are arranged in parallel and the capacitors 34a and 34b are not inserted. _{0-P '} Can be reduced by about 54%.
[0030]
As described above, according to the plasma processing apparatus of this embodiment, the collective antenna 15 includes the planar coil antenna 31 in which the pair of coils 31a and 31b are arranged in parallel to each other, the matching box 32, and the high-frequency power source. 33 and capacitors 34a and 34b connected in series to the other end of each of the coils 31a and 31b, and one of these coils 31a and 31b is set to the ground potential. The increase in the reactance component due to can be reduced by the capacitors 34a and 34b.
[0031]
Therefore, the potential V of the feeding portion of the coil antenna 31 _{0-P '} Can be greatly reduced as compared with the case where the coils 31a and 31b are arranged in parallel and the capacitors 34a and 34b are not inserted.
In addition, since the collective antenna 15 is covered with the metal RF shield 16, it is possible to realize a large area while maintaining a low feeding point potential.
[0032]
[Second Embodiment]
FIG. 4 is a configuration diagram showing an assembly antenna (second electrode) of the inductively coupled plasma processing apparatus according to the second embodiment of the present invention, and FIG. 5 is an explanatory diagram showing how the potential of the assembly antenna is reduced. is there.
The plasma processing apparatus of the second embodiment is different from the plasma processing apparatus of the first embodiment described above in that capacitors 42a and 42b are inserted in the middle of each of the pair of coils 41a and 41b (substantially in the center). However, these coils 41 a and 41 b are arranged in parallel with each other to form a planar coil antenna 43.
[0033]
At this time, the potential V of the feeding portion of the coil antenna 43 is _{0-P ''} Is the current flowing through the coil antenna 43 when the high-frequency power is supplied to the coil antenna 43 by the high-frequency power source 33, the angular frequency of the applied high-frequency power is ω, and the self-inductance of the coils 41a and 41b on the high-frequency power source 33 side. L ₁ , The self-inductance on the capacitor 34a, 34b side is L ₂ , The capacitance of capacitors 42a and 42b is C ₁ , The capacitance of the capacitors 34a and 34b is C ₂ Then, it is expressed by the following formula.
V _{0-P ''} = [Ω · (L ₁ + L ₂ )-(1 / ω) · {(1 / C ₁ ) + (1 / C ₂ )}] ・ I ...... (2)
[0034]
Since the coil antenna 43 has a configuration in which capacitors 42a and 42b are inserted in the middle of the coils 41a and 41b, the electric potential V of the power feeding unit. _{0-P ''} Can be further reduced.
For example, the angular frequency ω of the applied high frequency power is 13.56 MHz, and the self-inductance L of the coil antenna 43 is ₁ , L ₂ 4 μH, the capacities of the capacitors 42 a and 42 b are 200 pF, the capacities of the capacitors 34 a and 34 b are 150 pF, and the current flowing through the coil antenna 43 is 30 A. _rms Then, the potential V of the feeding portion of the coil antenna 43 _{0-P ''} Is 6.05 kV, and the potential V is compared to the case where the coils 31a and 31b are arranged in parallel and the capacitors 34a, 34b, 42a and 42b are not inserted. _0-P Can be reduced by about 42%.
[0035]
Also in the plasma processing apparatus of the present embodiment, the potential V of the feeding portion of the coil antenna 43 is _{0-P ''} Can be greatly reduced as compared with the case where the coils 31a and 31b are arranged in parallel and the capacitors 34a, 34b, 42a and 42b are not inserted.
[0036]
[Third Embodiment]
FIG. 6 is a block diagram showing an assembly antenna (second electrode) of the inductively coupled plasma processing apparatus according to the third embodiment of the present invention.
The plasma processing apparatus of the third embodiment is different from the plasma processing apparatus of the first embodiment described above in that a plurality of assembly antennas 15 (two in FIG. 6) are arranged on the same plane, This is that a phase controller (phase control means) 51 for controlling the phase of each of the high frequency power sources 33 and 33 is connected to each of the high frequency power sources 33 and 33 of the body antennas 15 and 15.
[0037]
When processing a large substrate of about a meter angle, the self-inductance L of the coils 31a and 31b exceeds 10 μH just by increasing the size of the collective antenna 15 in accordance with the size of the substrate. The potential cannot be lowered sufficiently. Therefore, by installing a plurality of collective antennas 15 in the same plane and covering the entire surface of the substrate, a large area is realized while maintaining a low feeding point potential.
[0038]
Further, if these collective antennas 15 and 15 are simply arranged on the same plane, they interfere with each other due to the induction electromagnetic fields generated from the collective antennas 15 and 15, respectively. For example, when a plurality of high-frequency power sources 33 are used, since the power frequency of each high-frequency power source 33 is actually slightly different, a beat is generated, and the strength of the discharge over time is generated.
[0039]
Furthermore, because of the phase of the high frequency fed to the collective antennas 15 and 15, for example, in the case of winding in the same direction, the magnetic fields generated by the antennas of each other induce each other. Is strengthened (because the induced electromotive force advances by π / 2 from the original current). Therefore, phase control is necessary to generate uniform plasma.
Therefore, in the present embodiment, the phase of each of the high-frequency power sources 33 and 33 is controlled using a clock transmitted from one phase controller (phase control means) 51.
[0040]
According to the plasma processing apparatus of this embodiment, the assembly antennas 15 and 15 are arranged on the same plane, and the phase controller 51 is connected to the high-frequency power sources 33 and 33 of these assembly antennas 15 and 15. Uniform plasma can be generated without the collective antennas 15 and 15 interfering with each other.
[0041]
[Fourth Embodiment]
FIG. 7 is a block diagram showing an assembly antenna (second electrode) of an inductively coupled plasma processing apparatus according to a fourth embodiment of the present invention.
The plasma processing apparatus according to the fourth embodiment differs from the plasma processing apparatus according to the third embodiment described above in that the phase controller 51 is replaced with a frequency controller (frequency control means) 61.
[0042]
According to the plasma processing apparatus of the present embodiment, since the phase controller 51 is replaced with the frequency controller 61, the generated beat is affected by the plasma processing by actively changing the frequency of each of the high-frequency power sources 33 and 33. The frequency can be controlled so as not to affect the frequency, and as a result, uniform plasma treatment can be performed.
[0043]
[Fifth Embodiment]
FIG. 8 is a block diagram showing an inductively coupled plasma processing apparatus according to a fifth embodiment of the present invention, and FIG. 9 is a block diagram showing an assembly antenna (second electrode) of the plasma processing apparatus.
The plasma processing apparatus of the fifth embodiment is different from the plasma processing apparatuses of the third and fourth embodiments described above in that a power distributor (high frequency power distribution means) that distributes high frequency power to the collective antennas 15 and 15. ) 71 is connected, and the matching box 32 and the high-frequency power source 33 are connected to the power distributor 71 in series.
[0044]
The power distributor 71 includes a plurality of variable capacitance capacitors 72a and 72b arranged in parallel. These variable capacitance capacitors 72a and 72b are connected in series (or in parallel) to each of the collective antennas 15 and 15.
[0045]
In this plasma processing apparatus, high-frequency power distributed to each of the collective antennas 15 and 15 by the power distributor 71 in order to supply power to the collective antennas 15 and 15 using one matching box 32 and one high-frequency power supply 33. Is controlling.
The impedance of each collective antenna 15, 15 is substantially determined by its shape and the capacitance of the capacitor. Therefore, the impedance can be made uniform by setting the collective antennas 15 and 15 to have the same shape and capacity.
[0046]
In addition, since the variable capacitance capacitors 72a and 72b are connected in series to each of the collective antennas 15 and 15, the impedance viewed from the matching box 32 side can be finely adjusted by changing the capacitance of each of the variable capacitance capacitors 72a and 72b. it can.
This method is equivalent to the same phase state of the plasma processing apparatus of the third embodiment, and is equivalent to the opposite phase when the adjacent assembly antennas 15 and 15 are reversely wound.
Also in the plasma processing apparatus of this embodiment, uniform plasma can be generated without the collective antennas 15 and 15 interfering with each other.
[0047]
As mentioned above, although each embodiment of the plasma processing apparatus of this invention was described based on drawing, a concrete structure is not limited to this embodiment, A design change etc. are the range which does not deviate from the summary of this invention. Is possible.
For example, in the third embodiment, the two collective antennas 15 are arranged on the same plane. However, the number of collective antennas 15 and the positions of the collective antennas 15 are the same as the size of the substrate S to be processed. It can be changed as appropriate.
[0048]
【The invention's effect】
As described above, according to the plasma processing apparatus of the present invention, the second electrode includes a planar coil antenna formed by arranging a plurality of coils in parallel and one connected in series to each of the coils. Since the collective antenna includes the above-described capacitor, an increase in reactance component due to the self-inductance of the coil antenna can be reduced by the capacitor, and the potential of the feeding portion of the coil antenna can be reduced.
[0049]
In addition, by arranging a plurality of the collective antennas on the same plane, these collective antennas cover a large-area object to be processed. Can be reduced.
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an inductively coupled plasma processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a configuration diagram showing an assembly antenna of the inductively coupled plasma processing apparatus according to the first embodiment of the present invention.
FIG. 3 is an explanatory diagram showing a manner of reducing the potential of the collective antenna of the inductively coupled plasma processing apparatus according to the first embodiment of the present invention.
FIG. 4 is a configuration diagram showing an assembly antenna of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
FIG. 5 is an explanatory diagram showing a manner of reducing the potential of the collective antenna of the inductively coupled plasma processing apparatus according to the second embodiment of the present invention.
FIG. 6 is a configuration diagram showing an assembly antenna of an inductively coupled plasma processing apparatus according to a third embodiment of the present invention.
FIG. 7 is a configuration diagram showing an assembly antenna of an inductively coupled plasma processing apparatus according to a fourth embodiment of the present invention.
FIG. 8 is a configuration diagram showing an inductively coupled plasma processing apparatus according to a fifth embodiment of the present invention.
FIG. 9 is a configuration diagram showing an assembly antenna of an inductively coupled plasma processing apparatus according to a fifth embodiment of the present invention.
FIG. 10 is a schematic configuration diagram showing an example of a coil antenna of a conventional high-density plasma processing apparatus.
[Explanation of symbols]
11 Vacuum container
12 Dielectric window
13 Vacuum pump
14 First electrode
14a Upper surface (one main surface)
15 Assembly antenna (second electrode)
16 RF shield
21 Processing gas inlet
22 Matching box
23 High frequency power supply
31 Coil antenna
31a, 31b coil
32 Matching box
33 High frequency power supply
34a, 34b capacitors
41a, 41b coil
42a, 42b capacitors
43 Coil antenna
51 Phase controller (phase control means)
61 Frequency controller (frequency control means)
71 Power distributor (high frequency power distribution means)
72a, 72b Capacitance variable capacitors
S substrate (object to be processed)

Claims (4)

A container in which the internal pressure can be controlled, a gas supply means for supplying a processing gas into the container, a first electrode provided in the container for placing an object to be processed on one main surface, A plasma processing apparatus comprising: a second electrode disposed opposite to the first electrode; and generating a plasma by applying high-frequency power between the first and second electrodes to process the object to be processed In
The second electrode includes a planar coil antenna having a plurality of coils arranged in parallel and one or more capacitors connected in series to each of the coils, and is surrounded by a conductive material having a ground potential. A plurality of assembly antennas arranged on the same plane independently of each other,
RF power distribution means for distributing the high-frequency power is connected to the plurality of assemblies each antenna, the said high-frequency power distribution unit is connected to a high frequency power source, phase control means for controlling the position phase is connected to the high frequency power source and,
The high-frequency power distribution means includes a plurality of capacitance variable capacitors arranged in parallel, and these capacitance variable capacitors are connected in series or in parallel to each of the plurality of collective antennas,
A plasma processing apparatus, wherein each of the capacitance variable capacitors is provided with adjusting means for measuring a high-frequency current value of the collective antenna to which the capacitor is connected, and adjusting a capacitance based on the measurement result . A container in which the internal pressure can be controlled, a gas supply means for supplying a processing gas into the container, a first electrode provided in the container for placing an object to be processed on one main surface, A plasma processing apparatus comprising: a second electrode disposed opposite to the first electrode; and generating a plasma by applying high-frequency power between the first and second electrodes to process the object to be processed In
The second electrode includes a planar coil antenna having a plurality of coils arranged in parallel and one or more capacitors connected in series to each of the coils, and is surrounded by a conductive material having a ground potential. A plurality of assembly antennas arranged on the same plane independently of each other,
RF power distribution means for distributing the high-frequency power is connected to the plurality of assemblies each antenna, the said high-frequency power distribution unit is connected to a high frequency power source, the said high-frequency power supply is connected to frequency control means for controlling the frequency and,
The high-frequency power distribution means includes a plurality of capacitance variable capacitors arranged in parallel, and these capacitance variable capacitors are connected in series or in parallel to each of the plurality of collective antennas,
A plasma processing apparatus, wherein each of the capacitance variable capacitors is provided with adjusting means for measuring a high-frequency current value of the collective antenna to which the capacitor is connected, and adjusting a capacitance based on the measurement result .   3. The plasma processing apparatus according to claim 1, wherein the self-inductance (L) of the coil and the electrostatic capacity (C) of the capacitor are set so as not to cause LC series resonance. The plasma processing apparatus according to any one of claims 1 to 3 , wherein the plurality of collective antennas have coil winding directions of adjacent collective antennas opposite to each other.

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