JP4094034B2 - Semiconductor manufacturing apparatus, CVD processing method for processing using the semiconductor manufacturing apparatus, and valve apparatus - Google Patents

Description

  The present invention relates to a pressure adjusting valve for a semiconductor manufacturing apparatus, for example, a pressure adjusting valve used for maintaining a reaction gas in a reaction chamber of a semiconductor manufacturing apparatus at a required pressure.

A CVD apparatus, which is one of the semiconductor manufacturing apparatuses, includes a pressure regulating valve, which is provided between the reaction chamber and the exhaust pump, and based on a signal from the gas pressure detection apparatus, The opening is adjusted, and the gas pressure in the reaction chamber is adjusted to a required value.

The reaction gas in the CVD apparatus has a property of generating a solid film on the wall surface of the flow path due to the exhaust gas that solidifies on the cooling surface after leaving the chamber. For this reason, the movable part such as the valve body and the fixed part such as the valve box are integrated by the solid film formed in the narrow gap, the operating resistance of the pressure regulating valve is remarkably increased, and the motor as the actuator is overloaded. May burn out.

Therefore, such a pressure regulating valve needs to be periodically disassembled and cleaned in order to prevent the burning. However, the conventional pressure regulating valve has a structure in which the valve body and the valve shaft of the valve body are integrated, or the valve body is passed through the valve body, and the bearing is removed for periodic cleaning. , Completely disassembling the valve box that houses the valve body, or pulling out the valve shaft, etc.
It has a structure that is difficult to clean. For this reason, cleaning requires a skilled worker and takes a long time, which causes a reduction in the operating rate of the semiconductor manufacturing apparatus.

In view of such a situation, the present invention is intended to prevent a solid film from being formed on a flow path wall surface, greatly reduce the burden of cleaning, and improve the operating rate of a semiconductor manufacturing apparatus.

The present invention is a semiconductor manufacturing apparatus in which a valve device comprising a fixed part such as a valve box and a movable part such as a valve body is provided between a reaction chamber and an exhaust pump,
A heater for a valve body is provided in the valve body, a valve shaft having one end fixed to the valve body and the other end penetrating the valve box is provided, and the through hole penetrating along the axial center of the valve shaft inserting the lead wire for energizing the heater, it relates to one end of the lead wire to the semiconductor manufacturing device connected to the heater, in which according to the CVD method of processing using Matahan conductor manufacturing equipment.
Further, the present invention is a valve device that is used between a reaction chamber and an exhaust pump in a semiconductor manufacturing apparatus, and includes a fixed portion such as a valve box and a movable portion such as a valve body. provided a heater in said valve body, the other end fixed at one end to the valve body provided with a valve stem extending through the valve body, the through hole of penetrations along the axis of the valve shaft energizing the heater inserting the lead wire to, those of the one end of the lead wire to the valve device connected to the heater.

A portion adjacent to the flow path is heated and maintained at a temperature equal to or higher than the solidification temperature in the exhaust gas by a heater. Therefore, the solidified component contained in the flowing reaction gas does not solidify even if it touches the valve body or the valve box, and a solid film is not generated by the reaction gas.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the present embodiment, the components of the pressure regulating valve such as the valve box and the valve seat, particularly the components adjacent to the gas flow path are heated and held above the gas dew point, and a solid film is formed on the wall surface of the flow path. To prevent.

  Hereinafter, a specific description will be given with reference to FIGS.

Bearing housings 3 and 3 having an axis perpendicular to the axis of the cylindrical hollow portion 1 are fitted into a valve box 2 having a hollow cylindrical portion 1, and bearings 4 and 4 are fitted to both bearing housings 3 and 3. And the valve shafts 5 and 6 are rotatably inserted.

O-rings 7 and 7 are provided between the valve shafts 5 and 6 and the valve box 2 to hermetically seal between the valve shafts 5 and 6 and the valve box 2. The valve shafts 5 and 6 are on the same axis, and a valve body 9 is fixed to the inner ends of the valve shafts 5 and 6. A worm wheel 11 is fitted to one of the valve shafts 5 and 6 via a heat insulating collar 10, and an O-ring 12 is provided between the other valve shaft 6 and the valve body 9.

A motor support bracket 14 is provided on the valve box 2 via a heat insulating plate 13, a valve opening / closing motor 16 is attached to the motor support bracket 14 via a speed reducer 15, and a worm 18 is attached to an output shaft 17 of the valve opening / closing motor 16. The worm wheel 11 is engaged with the worm 18.

The shape of the valve body 9 is a disk shape having a curved peripheral surface, and a large-diameter concave portion 19 and a small-diameter concave portion 20 further formed at the center of the large-diameter concave portion 19 are formed on the two planes of the valve body 9, respectively. Then, the small-diameter recess 20 accommodates a valve body heater 21 formed in a donut shape.

An O-ring 8 is embedded concentrically with the small-diameter recess 20, and a cover plate 22 is fitted into the large-diameter recess 19 to close the small-diameter recess 20 in an airtight manner. The valve body 9 is provided with a guide hole 24 for communicating the small-diameter recesses 20 and 20 and a lateral hole 25 for communicating with the guide hole 24 in a T-shape. The lateral hole 25 is provided on the same axis as the other valve shaft 6.

  The other valve shaft 6 is hollow, and a through hole 26 penetrating the valve shaft 6 along the axial center communicates with the lateral hole 25.

A lead wire 27 with an insulating coating is inserted into the through hole 26, one end of the lead wire 27 is connected to the valve element heater 21, and the other end of the lead wire 27 is connected to a temperature control device (not shown).

The one valve shaft 5 is provided with a closing hole 28, a temperature sensor 29 is inserted into the closing hole 28, and the lead wire 30 of the temperature sensor 29 is connected to the temperature control device (not shown).

A flat valve box heater 31 is fixed to two planes through which the valve shafts 5 and 6 of the valve box 2 do not penetrate, and a temperature sensor 32 for detecting the temperature of the valve box 2 is attached to the valve box by a fitting 33. 2 is attached in close contact. The flat valve box heater 31 and the temperature sensor 32 are connected to the temperature control device (not shown).

  In addition, attachment to the related apparatus of this valve apparatus is performed via a heat insulation member, and the leak of the heat from this valve apparatus is prevented.

  The operation will be described below.

The valve opening degree is adjusted by driving the valve opening / closing motor 16 and rotating the valve body 9 via the worm 18, the worm wheel 11 and the valve shaft 5. The rotational angle of the valve body 9 is detected by detecting the rotational speed of the valve opening / closing motor 16 and detecting the rotational angle of the valve shaft 5 to determine the opening degree of the valve device.

The valve body heater 21 and the valve box heater 31 are energized, and the valve body 9 and the valve box 2 are heated and kept warm. The heating and holding temperature is selected from a range of about 35 ° C. to 150 ° C. and is set as a target set temperature.

Temperature detection signals from the temperature sensors 29 and 32 are input to a temperature control device (not shown), and energization of the valve body heater 21 and the valve box heater 31 is controlled based on the detected temperature. Thus, the parts such as the valve box 2 and the valve body 9 that are in contact with the reaction gas are maintained and controlled at a temperature of 80 ° C to 100 ° C. Further, the valve body heater 21, so that such control is possible.
The electric capacity of the valve box heater 31 is determined, and the maximum value of the applied voltage is selected so that the O-ring or the like is not burned even if the temperature control device is disturbed and cannot be controlled.

The reactive gas flows through the valve device together with the CVD process. As described above, the valve body 9 and the valve box 2 are heated and kept warm by the valve body heater 21 and the valve box heater 31, respectively. Accordingly, the solidified component present in the reaction gas does not solidify even when it comes into contact with the wall surface of the cylindrical hollow portion 1 and the surface of the valve body 9. Thus, even when the reaction gas is circulated, a solid film is not generated on the wall surface of the cylindrical hollow portion 1 and the surface of the valve body 9.

Various valve body heaters 21 and valve box heaters 31 are conceivable. As the valve body heater 21, a ribbon wire 36, which is a required heating element, is wound around a thin donut-shaped base 34 of mica, and a mica circle is formed. As the valve box heater 31, a heating element 38 is wound around a rectangular thin plate 37 of mica, sandwiched by a thin plate 39 of mica, and further covered with a metal cover 40. The thing fixed to the side surface is mentioned.

  The valve box heater may be embedded in the valve box.

As described above, according to the present invention, the portion exposed to the circulating gas is heated and maintained at a temperature equal to or higher than the solidification temperature of the solidified component contained in the circulating gas, so that a solid film is not generated by the exhaust gas. Therefore, disassembly and cleaning for removing the solid film is unnecessary.

  Thus, the valve keeping operation can be reduced, and various excellent effects such as improvement in the operating rate of the semiconductor manufacturing apparatus can be achieved by eliminating the stoppage of the apparatus due to disassembly and cleaning.

It is a partially broken perspective view showing an embodiment of the present invention. It is a sectional side view of the same embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cylindrical hollow part 2 Valve box 9 Valve body 21 Valve body heater 31 Valve box heater

Claims (3)

A semiconductor manufacturing apparatus in which a valve device comprising a stationary part such as a valve box and a movable part such as a valve body is provided between a reaction chamber and an exhaust pump,
A heater for a valve body is provided in the valve body, a valve shaft having one end fixed to the valve body and the other end penetrating the valve box is provided, and the through hole penetrating along the axial center of the valve shaft A semiconductor manufacturing apparatus , wherein a lead wire for energizing a heater is inserted, and one end of the lead wire is connected to the heater . A valve device that is used between a reaction chamber and an exhaust pump in a semiconductor manufacturing apparatus and includes a fixed part such as a valve box and a movable part such as a valve body, and a heater for the valve body is provided in the valve body. A valve shaft having one end fixed to the valve body and the other end penetrating the valve box is provided, and a lead wire for energizing the heater is inserted into a through hole penetrating along the axis of the valve shaft. And one end of the lead wire connected to the heater. CVD processing method for processing using a semi-conductor manufacturing apparatus according to claim 1.

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