JP4095477B2

JP4095477B2 - Radio wave absorbing lid member and high-frequency device using the same

Info

Publication number: JP4095477B2
Application number: JP2003087346A
Authority: JP
Inventors: 英也松元; 秀伸江頭
Original assignee: Kyocera Corp
Current assignee: Kyocera Corp
Priority date: 2003-03-27
Filing date: 2003-03-27
Publication date: 2008-06-04
Anticipated expiration: 2023-03-27
Also published as: JP2004296791A

Description

【０００１】
【発明の属する技術分野】
本発明は、高周波素子を収容する高周波装置に用いられる電波吸収蓋部材および高周波装置に関し、特にマイクロ波帯やミリ波帯の高周波（電磁波）の吸収特性に優れる電波吸収蓋部材および高周波装置に関する。
【０００２】
【従来の技術】
従来の電波吸収蓋部材の断面図を図４に、従来の高周波装置の断面図を図５に示す。これらの図に示すように、11は電波吸収蓋部材、12は金属蓋体、13は電波吸収層、14は高周波装置、15は基体、16は高周波素子、Ｓは接合材である。
【０００３】
近年、電子機器はますます高速化、高密度化、デジタル化が進み、小型、多機能化も加速傾向にある。電子機器の小型多機能化の要求から、特にマイクロ波帯やミリ波帯で使用される高周波素子16は、配線基板への部品実装密度が非常に高まり、高周波素子16のピン間、周辺回路、他の高周波素子等に電磁波障害が発生するといった問題がある。この原因は、高周波素子16としての多数の半導体素子にあり、個々の半導体素子で発生する微弱な電磁波が他の半導体素子にとっては妨害波（放射ノイズ）となり、配線の線間結合やピン間の結合の増大、放射ノイズによる電磁干渉に起因する性能劣化や異常共振等が誘起され、電磁波障害が発生するためである。
【０００４】
従来、このようないわゆる電磁波障害に対しては、回路にノイズフィルタを挿入したり、高周波素子16の周囲を金属板や金属メッキ層等の導電層をコーティングしたケースで囲んで成る電磁シールディングを施したり、または電波吸収シートから成る電波吸収層13を回路基板表面、高周波装置14表面に熱硬化性樹脂、低融点ガラスあるいは半田等の低融点ロウ材などの接合材Ｓで貼り付けて、電磁波障害を抑制してきた（下記の特許文献１参照）。
【０００５】
また、針状または扁平状であって表面に酸化被膜を有する軟磁性粉末と有機結合剤等とを含む複合磁性体で構成されているＥＭＩ（Electro Magnetic Interference：電磁的障害）対策部品を、高周波装置の上面に配置して電磁波障害を抑制することが提案されている（下記の特許文献２参照）。
【０００６】
さらに、ガラスまたはセラミックスをマトリックスとし、Ｔｉ，Ｖ，Ｃｒ，Ｚｒ，Ｎｂ，Ｍｏ，Ｈｆ，Ｔａ，Ｗ，Ｆｅ，Ｎｉ，Ｃｏ，Ｃｕ，Ａｌ，Ｍｇ，Ｚｎおよびそれらの合金、ステンレス鋼、パーマロイおよび超耐熱性合金から選ばれる少なくとも一種である金属粒子を複合相とする複合材料から成る電波吸収材料が開示されている（下記の特許文献３参照）。
【０００７】
〔特許文献１〕
特開2002−289720号公報
〔特許文献２〕
特開平10−64714号公報
〔特許文献３〕
特開平９−255408号公報
【０００８】
【発明が解決しようとする課題】
しかしながら、特許文献１に記載されている、電波吸収シートから成る電波吸収層13を高周波装置14表面に貼り付けるといった手段は、高周波装置14全体の厚さが厚くなり、機器の小型化には不利である。また、電波吸収層13がゴムやエポキシ樹脂等に磁性材料を混合させたものであり、また金属蓋体12に電波吸収層13を樹脂接着剤で貼り付けているため、電波吸収層13や樹脂接着剤の耐熱性が非常に小さいことから、高周波素子16の熱等によって電波吸収層13に容易に反りが生じ、電波吸収層13が金属蓋体12から剥離するといった問題点があった。
【０００９】
また、特許文献２に記載されている、ＥＭＩ対策部品として用いられる扁平状、針状の軟磁性体粉末を用いた複合磁性体も有機結合材を含むため、耐熱性、寸法安定性に劣るといった問題があった。従って、この複合磁性体を高周波装置14の構成部品として用いると、熱硬化性樹脂、低融点ろう材、低融点ガラス等による接合ができないといった問題点があった。
【００１０】
さらに、特許文献３に記載されている、ガラスまたはセラミックスをマトリックスとし、Ｔｉ等の金属粒子を複合相とする複合材料から成る電波吸収材料は、それ自体は耐熱性および機械的特性に優れたものである。しかしながら、特許文献３にはこのような電波吸収材料を他の金属蓋体等に接合性良く被着させて、電波吸収蓋部材やパッケージ、電子装置、半導体装置等に好適に適用する点については一切開示されていない。
【００１１】
従って、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、電波吸収蓋部材に電波吸収層を直接強固に被着できるようにして、電波吸収層が熱によって剥れることのない低背化された高周波装置を作製できる電波吸収蓋部材、およびこの電波吸収蓋部材を用いた、マイクロ波帯やミリ波帯の高周波帯域で良好にＥＭＩ対策の施された小型の高周波装置を提供することにある。
【００１２】
【課題を解決するための手段】
本発明の電波吸収蓋部材は、平板状の金属蓋体の一主面に、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層と、該金属層の酸化層と、磁性材を５１乃至９０質量％および軟化点が２５０乃至５００℃の低融点ガラスを５乃至４０質量％ならびにチタン酸バリウムを１乃至２０質量％含有するとともに、厚みが２００乃至５００μｍである電波吸収層とが順次積層された電波吸収体が形成されており、前記一主面の前記電波吸収体が被着されていない外周部が、基体の上面の凹部の周囲にロウ付けおよび抵抗溶接の少なくとも一方で接合されることを特徴とする。
【００１３】
本発明の電波吸収蓋部材は、平板状の金属蓋体の一主面に、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層と、該金属層の酸化層と、磁性材を５１乃至９０質量％および軟化点が２５０乃至５００℃の低融点ガラスを５乃至４０質量％ならびにチタン酸バリウムを１乃至２０質量％含有する電波吸収層とが順次積層された電波吸収体が形成されており、一主面の電波吸収体が被着されていない外周部が、基体の上面の凹部の周囲にロウ付けおよび抵抗溶接の少なくとも一方で接合されていることから、耐熱性に優れたものとなり、高周波素子の熱や高周波装置を外部電気回路基板等に半田等で接合する際の熱によって電波吸収層が金属蓋体から剥離することがなくなる。また、電波吸収層が強誘電体であるチタン酸バリウムを含んでいることから、電波吸収効果が大幅に向上する。さらに、電波吸収層の厚みが２００乃至５００μｍであることから、電波吸収蓋部材の大幅な薄型化が可能となり、高周波装置の大幅な低背化につながる。
【００１４】
また、電波吸収層は、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層と金属層の酸化層とを介して、金属蓋体の一主面に積層されていることから、金属層に含有されるＴｉ，Ｚｒ，Ｈｆの活性金属が金属蓋体の金属粒界に拡散して金属蓋体と金属層とを強固に接合するとともに、金属層の酸化層の酸化物が電波吸収層中のガラスの酸化物成分と反応して金属層と電波吸収層とを強固に接合する。その結果、金属蓋体を、高周波素子を収容した基体にシーム溶接やロウ付けする際に230〜240℃の熱履歴が加わったとしても、電波吸収層が熱によって剥離することがなくなる。
【００１５】
また、電波吸収層が電波吸収して電磁波のエネルギーを熱に変換した際に、その熱を互いに強固に接合された電波吸収層、金属層および金属蓋体を介して外部に効率良く放熱させることができる。
【００１６】
本発明の高周波装置は、上面に形成された凹部の底面に高周波素子が載置される載置部を有する基体と、前記載置部に載置固定された高周波素子と、前記一主面が前記高周波素子に対向するように、前記基体の上面の前記凹部の周囲に前記外周部がロウ付けおよび抵抗溶接の少なくとも一方で接合された本発明の電波吸収蓋部材とを具備していることを特徴とする。
【００１７】
本発明の高周波装置は、上記の構成により、電波吸収層が熱によって剥れることのない低背化されたものとなるとともに、内部で電磁波の共振が発生するのを抑えることができる。その結果、マイクロ波帯やミリ波帯の高周波帯域で良好にＥＭＩ対策の施された高周波装置を作製することができる。
【００１８】
【発明の実施の形態】
本発明の電波吸収蓋部材および高周波装置を以下に詳細に説明する。図１は、本発明の電波吸収蓋部材の実施の形態の一例を示す断面図、図２はその要部拡大断面図である。これらの図において、１は電波吸収蓋部材、２は金属蓋体、３は電波吸収体、３ａは金属層、３ｂは電波吸収層、３ｃは酸化層であり、主にこれらで本発明の電波吸収蓋部材１が構成されている。
【００１９】
本発明の電波吸収蓋部材１は、平板状の金属蓋体２の一主面に、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層３ａと、金属層３ａの酸化層３ｃと、磁性材を５１乃至９０質量％および軟化点が２５０乃至５００℃の低融点ガラスを５乃至４０質量％ならびにチタン酸バリウムを１乃至２０質量％含有するとともに、厚みが２００乃至５００μｍである電波吸収層３ｂとが順次積層された電波吸収体３が形成されており、一主面の電波吸収体３が被着されていない外周部が、基体５ａ，５ｂの上面の凹部の周囲にロウ付けおよび抵抗溶接の少なくとも一方で接合されている。
【００２０】
本発明における金属蓋体２は、例えば42アロイ（Ｆｅ−Ｎｉ合金）、Ｆｅ−Ｎｉ−Ｃｏ合金等の金属や合金から成るのが好ましく、これらは電磁波シールド性や電波吸収層３ｂとの熱整合が良いという利点がある。そして、金属蓋体２は、Ｆｅ−Ｎｉ−Ｃｏ合金等の母材を打抜き金型で打ち抜くことによって、四角形状等の所定の形状に製作される。
【００２１】
なお、金属蓋体２の電波吸収層３ｂが被着されていない領域には、酸化腐食の防止とロウ付け性の向上のため、Ｎｉめっき層やＡｕめっき層等のめっき層が形成されている。
【００２２】
本発明の電波吸収層３ｂは、磁性材を51乃至90質量％および軟化点が250乃至500℃の低融点ガラスを５乃至40質量％ならびにチタン酸バリウムを１乃至20質量％含有するとともに、厚みが200乃至500μｍである。これにより、従来の200℃程度の耐熱性しかないゴムや樹脂に磁性材を混入させたものと異なり耐熱性に優れ、接着剤を用いて貼り付けることもないので電波吸収層３ｂが金属蓋体２から剥離することもない。したがって、電波吸収層３ｂは、耐熱性に優れたものとなり、高周波素子の熱や高周波装置を外部電気回路基板等に半田等で接合する際の熱によって電波吸収層３ｂが金属蓋体２から剥離することがなくなる。また、電波吸収層３ｂの厚みが200乃至500μｍであることから、電波吸収蓋部材１の大幅な薄型化が可能となり、高周波装置の大幅な低背化につながる。
【００２３】
また、低融点ガラスとして鉛を含まない無鉛の低融点ガラスを用いるのがよく、環境問題に配慮されたものを作製できるとともに、低融点ガラスの加熱溶融時にアウトガスやブリードの発生も一切無い。
【００２４】
磁性材としては、Ｆｅ−Ｂ−Ｓｉ系合金，Ｆｅ−Ｂ−Ｓｉ−Ｃ系合金，Ｆｅ−Ｂ−Ｓｉ−Ｃｒ系合金，Ｆｅ−Ｃｏ−Ｂ−Ｓｉ系合金，Ｆｅ−Ｎｉ−Ｍｏ−Ｂ系合金，Ｃｏ−Ｆｅ−Ｎｉ−Ｍｏ−Ｂ−Ｓｉ系合金，Ｃｏ−Ｆｅ−Ｎｉ−Ｂ−Ｓｉ系合金等の高透磁率のアモルファス磁性金属やアモルファス磁性合金、または、36−パーマロイ（Ｆｅを36質量％含有するＦｅ−Ｎｉ合金），45−パーマロイ，78−パーマロイ，スーパーマロイ（急冷熱処理Ｍｏ含有Ｆｅ−Ｎｉ合金），Ｃｒ−パーマロイ（Ｃｒ含有Ｆｅ−Ｎｉ合金），Ｍｏ−パーマロイ（Ｍｏ含有Ｆｅ−Ｎｉ合金），μ−メタル（μ−ｍｅｔａｌ：Ｃｒ，Ｃｕ含有Ｆｅ−Ｎｉ合金）等のＮｉ−Ｆｅ系合金、または、純鉄，軟鋼，Ｆｅ−Ｓｉ合金，Ｆｅ−Ａｌ合金，Ｆｅ−Ｓｉ−Ａｌ合金，Ｃｏ−Ｆｅ合金，Ｍｎ−Ｚｎ系フェライト，Ｎｉ−Ｚｎ系フェライト，Ｃｕ−Ｚｎ系フェライト，Ｃｕ−Ｚｎ−Ｍｇ系フェライト，Ｍｎ−Ｍｇ−Ａｌ系フェライト，Ｙ型六方晶フェライト，Ｚ型六方晶フェライト，Ｍ型六方晶フェライト等があり、これらの少なくとも一種から成るものである。特に、高透磁率のアモルファス磁性金属やアモルファス磁性合金、Ｎｉ−Ｆｅ系合金が、高い電波吸収効果を有する点で好ましい。
【００２５】
なお、例えば上記のＦｅ−Ｂ−Ｓｉ系合金とは、Ｆｅ，Ｂ，Ｓｉを主成分として含む（50質量％程度以上含む）合金という意味である。
【００２６】
また、軟化点が250乃至500℃の低融点ガラスとしては、高周波素子６（図３）への熱的影響を小さくすること、およびガラス内の残留応力を小さくする観点から、できる限り低温で溶融可能なものが好ましく、例えば、Ｎａ_２Ｏ−Ｂ_２Ｏ_３系等のホウ酸塩、Ｎａ_２Ｏ−Ｂ_２Ｏ_３−Ｐ_２Ｏ_５系等のリン酸塩、Ｌｉ_２Ｏ−ＧｅＯ_２系等のゲルマン酸塩、Ｔａ_２Ｏ_５−Ｂ_２Ｏ_３系等のタリウム酸塩、Ｎａ_２Ｏ−ＭｏＯ_３系等のモリブデン酸塩、Ｖ_２Ｏ_５−ＧｅＯ_２−Ｐ_２Ｏ_５系等のバナジン酸塩、テルル酸塩、フッ化物、フツリン酸、カルコゲナイド、オキシカルコゲナイド等が挙げられる。特に、10〜50質量％の酸化銀と10〜20質量％のヨウ化銀とから成るガラスが、その軟化点が約280℃であり耐熱性に優れていることから、好適である。
【００２７】
電波吸収層３ｂに含まれるチタン酸バリウムは、その含有量が１質量％未満だと、１〜20ＧＨｚ帯域の電波吸収特性が不充分となる。20質量％を超えると、低融点ガラスとの分散性が劣化して、電波吸収層３ｂの強度が低下して剥離し易くなる。
【００２８】
磁性材の含有量が51質量％未満だと、高周波装置と成した際に高周波装置内部で電磁波の共振を抑えることが不十分となり、また電波吸収層３ｂに反りが発生して剥離し易くなる。90質量％を超えると、粉体とされた磁性材の低融点ガラスへの分散性が悪くなり、電波吸収層３ｂの強度が著しく低下し、電波吸収層３ｂの剥離が発生し易くなる。
【００２９】
低融点ガラスが５質量％未満だと、磁性材の分散性が悪くなり、電波吸収層３ｂの強度が著しく低下し、電波吸収層３ｂの剥離が発生し易くなる。一方、40質量％を超えると、高周波装置と成した際に高周波装置内部で電磁波の共振を抑えることが不十分となり、また電波吸収層３ｂに反りが発生して剥離し易くなる。
【００３０】
低融点ガラスの軟化点が250℃未満だと、電波吸収蓋部材１を高周波素子６を収容した基体にシーム溶接やロウ付けする際に、電波吸収層３ｂが溶融し易くなる。一方、低融点ガラスの軟化点が500℃を超えると、磁性材が凝集してしまい、その結果電波吸収層３ｂの強度が著しく低下して電波吸収層３ｂが剥離し易くなる。
【００３１】
電波吸収層３ｂの厚みが200μｍ未満では、電波吸収特性が不十分となる傾向があり、厚みが500μｍを超えると、電波吸収蓋部材１全体が厚くなり薄型化が困難になる。また、金属蓋体２と電波吸収層３ｂとの熱膨張差によって金属蓋体２に反りが発生して、電波吸収層３ｂが剥離し易くなる。
【００３２】
本発明の電波吸収蓋部材１は、電波吸収層３ｂは、活性金属であるＴｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層３ａ、金属層３ａの酸化層３ｃを介して金属蓋体２の一主面に積層されていることから、金属層３ａに含有されたＴｉ，Ｚｒ，Ｈｆの活性金属が金属蓋体２の金属粒界に拡散して金属蓋体２と金属層３ａとを強固に接合するとともに、金属層３ａの酸化層３ｃの酸化物が電波吸収層３ｂ中のガラスの酸化物成分と反応して金属層３ａと電波吸収層３ｂとを強固に接合する。その結果、金属蓋体２を基体にシーム溶接やロウ付けする際に230〜240℃の熱履歴が加わったとしても、電波吸収層３ｂが熱によって剥離することがなくなる。
【００３３】
また、電波吸収層３ｂが電波吸収して電磁波のエネルギーを熱に変換した際に、その熱を互いに強固に接合された電波吸収層３ｂ、金属層３ａおよび金属蓋体２を介して外部に効率良く放熱させることができる。
【００３４】
このような電波吸収層３ｂ、金属層３ａは以下の方法により金属蓋体２に被着される。まず、Ａｇ−Ｃｕ合金粉末とＴｉ，ＺｒおよびＨｆのうちの１種以上の活性金属粉末、アクリル樹脂等の有機バインダ、トルエン，アセトン等の溶剤を混合して得た活性金属ペーストを、金属蓋体２に厚みが約70μｍとなるようにスクリーン印刷し、還元雰囲気中、約800℃の温度で熱処理して金属蓋体２に密着させる方法により金属層３ａを被着する。次に、磁性材とチタン酸バリウムを含有した低融点ガラスに有機溶剤、溶媒を添加混合して得た磁性材ペーストを、金属蓋体２に厚みが200乃至500μｍとなるようにスクリーン印刷して、電波吸収層３ｂとなる磁性材ペースト層を形成し、大気中、約350〜600℃で焼成することで、電波吸収層３ｂのガラス成分と金属層３ａの活性金属が酸化して形成された酸化層３ｃが同時に形成される。これにより、金属層３ａに電波吸収層３ｂが酸化層３ｃを介して強固に被着される。
【００３５】
金属層３ａの厚みは50〜100μｍが好ましい。50μｍ未満では、活性金属が酸化して形成される酸化層３ｃが十分な厚さとならない傾向にある。100μｍを超えると、還元雰囲気中で熱処理した際、金属層３ａ内で不均一な部分を生じることがある。
【００３６】
酸化層３ｃの厚みは１〜３μｍが好ましい。１μｍ未満では、金属層３ａと電波吸収層３ｂとの接合強度が弱くなり、熱により電波吸収層３ｂが金属層３ａから剥れ易くなる。３μｍを超えると、過剰酸化となり、酸化層３ｃと電波吸収層３ｂとの接合界面において気泡をまき込み易くなるため、接合面積が減少して電波吸収層３ｂが金属層３ａから剥れ易くなる。
【００３７】
次に、本発明の電波吸収蓋部材１を用いた高周波装置４について、図３に基づいて詳細に説明する。同図は、本発明の高周波装置４の実施の形態の一例を示し、（ａ）は金属から成る基体５ａを用いた高周波装置の断面図、（ｂ）は絶縁体から成る基体５ｂを用いた高周波装置の断面図である。これらの図に示すように、２は金属蓋体、３は電波吸収体、４は高周波装置、５ａ，５ｂは基体、６は高周波素子、７はメタライズ層、８は封止材である。
【００３８】
本発明の高周波装置は、上面に形成された凹部の底面に高周波素子６が載置される載置部を有する基体５ａ，５ｂと、載置部に載置固定された高周波素子６と、一主面が高周波素子６に対向するように、基体５ａ，５ｂの上面の凹部の周囲に外周部がロウ付けおよび抵抗溶接の少なくとも一方で接合された本発明の電波吸収蓋部材１とを具備している。
【００３９】
本発明における基体５ａ，５ｂは、上面の中央部に高周波素子６を収容するための凹部が設けられており、この凹部の底面に高周波素子６が低融点ガラス、樹脂接着剤、ロウ材等の接着剤を介して接着固定される。また、基体５ａ，５ｂの凹部の側面や底面から外面にかけて、複数のメタライズ配線層や複数のリード端子（図示せず）が、基体５ａ，５ｂの表面をつたって、または基体５ａ，５ｂを貫通するとともにガラスで気密封止されて設けられている。このメタライズ配線層やリード端子の凹部の底面に位置する部位は、高周波素子６の各電極がボンディングワイヤ等（図示せず）を介して電気的に接続され、基体５ａ，５ｂの外面に導出された部位は、外部電気回路基板の配線導体（図示せず）にボンディングワイヤ等の導電性接続部材を介して電気的に接続される。
【００４０】
金属からなる基体５ａは、４２アロイやＦｅ−Ｎｉ−Ｃｏ合金等から成るのが好ましく、それらの金属の母材を打抜き金型で打ち抜いたり、切削などの機械加工を施すことによって、凹部を有する所定の形状のものとして製作される。なお、基体５ａの表面に、耐食性に優れ、Ａｕ−Ｓｎロウ材や半田等のロウ材との濡れ性の良好な金等の金属をめっき法等により、０．１〜１μｍの厚さに被着させておくのが好ましい。
【００４１】
そして、基体５ａの上面の凹部の周囲と電波吸収蓋部材１の下面の外周部とを、シーム溶接などの抵抗溶接で接合する。または、電波吸収蓋部材１の下面の外周部に被着形成されたロウ材から成る封止材８を介して接合したり、さらにはシーム溶接とロウ付けとを組み合わせても構わない。
【００４２】
例えば、基体５ａと電波吸収蓋部材１とをシーム溶接する場合、基体５ａの上面の凹部の周囲に電波吸収蓋部材１を載置し、窒素雰囲気の下で、電波吸収蓋部材１の上面の外周部に通電されたローラー電極を当てて、電波吸収蓋部材１を基体５ａ側にローラー電極で一定圧力で押圧しつつローラー電極を周回させて、0.5〜10分間圧着させることにより、気密に接合する。
【００４３】
一方、絶縁体からなる基体５ｂの場合、基体５ｂは、酸化アルミニウム質焼結体、ムライト質焼結体、窒化アルミニウム質焼結体、炭化珪素質焼結体、ガラスセラミックス等を主成分とする焼結体（セラミックス）等の無機材料、または樹脂から成る。例えば、基体５ｂが酸化アルミニウム質焼結体から成る場合、先ずアルミナ（Ａｌ_２Ｏ_３）やシリカ（ＳｉＯ_２）、カルシア（ＣａＯ）、マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤、溶媒を添加混合して泥漿状と成し、これを従来周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに複数枚積層し、約1600℃の温度で焼成することにより製作される。
【００４４】
そして、基体５ｂの場合、その上面の凹部の周囲には、電波吸収蓋部材１に接合するための枠状のメタライズ層７が被着される。このメタライズ層７や凹部の側面や底面に形成されたメタライズ配線層は、タングステンやモリブデン、マンガン等の高融点金属から成り、これらの粉末に有機溶剤、溶媒を添加混合した金属ペーストをそれぞれグリーンシートの所定位置に従来周知のスクリーン印刷法により所定パターンに被着形成させておき、グリーンシートと同時に焼成することにより形成される。なお、メタライズ層７の表面には、耐食性に優れ、Ａｕ−Ｓｎロウ材や半田等のロウ材との濡れ性の良好な金等の金属を、めっき法等により0.1〜１μｍの厚さに被着させておくのがよく、フラックスを用いることなく金属蓋体２と接合することが可能となる。
【００４５】
なお、半田等に含まれるフラックスは、高周波装置４内部に飛散すると、高周波素子６の電極を腐蝕し断線を発生させる原因となることから、メタライズ層７の表面には、金等の金属をめっき法等により被着させておき、メタライズ層７と電波吸収蓋部材１との接合をフラックスを用いずに行なうことが好ましい。そして、メタライズ層７に電波吸収蓋部材１が、その下面の外周部に被着形成された封止材８を介して接合される。
基体５ｂと電波吸収蓋部材１との接合は、基体５ｂ上面の凹部の周囲に形成されたメタライズ層７と電波吸収蓋部材１との間に封止材８が挟まるように電波吸収蓋部材１を基体５ｂ上面に載置し、電波吸収蓋部材１を基体５ｂ側に一定圧力で押圧しながらピーク温度が約280〜300℃で窒素雰囲気のシール炉に0.5〜10分間入れて、封止材８を溶融させることにより、封止材８が流れ出しフィレットを形成して気密に接合されることとなる。
【００４６】
かくして、本発明の電波吸収蓋部材１および高周波装置４は、基体５ａ，５ｂの凹部底面の載置部に半導体素子等の高周波素子６を樹脂接着剤等を介して載置固定し、高周波素子６の各電極をボンディングワイヤ等を介してリード端子やメタライズ配線層に接続し、しかる後、基体５ａの上面の凹部の周囲に電波吸収蓋部材１をシーム溶接で接合したり、あるいは電波吸収蓋部材１の下面の外周部に被着された封止材８を加熱溶融させ、メタライズ層７に接合することにより、基体５ａ，５ｂと電波吸収蓋部材１とを封止することによって、製品としての高周波装置４となる。
【００４７】
なお、本発明は上記実施の形態に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。例えば、上述の実施の形態では高周波素子６としてＩＣ，ＬＳＩ等の半導体素子を用いた例について説明したが、高周波素子６として圧電振動子や弾性表面波素子等の電子部品を用いることもできる。
【００４８】
【実施例】
本発明の電波吸収蓋部材の実施例を以下に説明する。
【００４９】
図１の電波吸収蓋部材１を以下のようにして製作した。まず、寸法が縦21.1ｍｍ×横19.6ｍｍ×厚み0.3ｍｍの四角形の板状で、Ｆｅ−Ｎｉ−Ｃｏ合金から成る金属蓋体２を準備し、その電波吸収層３ｂが形成される部位以外の部位の全面に厚さ2.0μｍのＮｉめっき層と厚さ0.5μｍのＡｕめっき層を被着した。
【００５０】
次に、金属蓋体２の一主面の電波吸収層３ｂが形成される部位に、活性金属としてＴｉを３質量％（Ａｇ−Ｃｕ合金を100質量％とする）含有したＡｇ72質量％−Ｃｕ28質量％のＡｇ−Ｃｕ共晶からなる金属層３ａを、スクリーン印刷で厚さ70μｍに形成し、還元雰囲気中、800〜850℃の温度で熱処理して金属蓋体２に被着した。
【００５１】
電波吸収層３ｂは、パーマロイ（Ｆｅ42質量％、Ｎｉ58質量％のＦｅ−Ｎｉ合金）から成る磁性材と、チタン酸バリウムを含有した銀−リン系の低融点ガラス（軟化点約280℃）を、種々の割合（下記表１参照）で混合し、これに有機溶剤（日本香料薬品株式会社製「メンタノール」）を少量添加し、スクリーン印刷法によって、縦19.1ｍｍ×横17.6ｍｍの大きさ、および焼成後に種々の厚み（下記表１参照）となるようにして、金属蓋体２の一主面の金属層３ａ上に塗布した。これを、炉中で温度300℃〜350℃で焼成して、厚さ1.5μｍの酸化層３ｃを形成し、電波吸収層３ｂを金属蓋体２に被着形成した。
【００５２】
得られた各種試料について、電波吸収蓋部材１の反り、金属蓋体２と電波吸収層３ｂとの接着強度、電磁波減衰効果を測定した。
【００５３】
なお、電波吸収蓋部材１の反りについては、通炉前と通炉後を比較して、通炉後に反り（最大高低差）が0.15ｍｍ未満であったものを○、0.15ｍｍ以上であったものを×とした。
【００５４】
接着強度の測定は、金属蓋体２の一主面に電波吸収層３ｂが被着されている状態で、49Ｎ（ニュートン）の荷重で３点曲げ試験を行ない、プッシュプルゲージが1.0ｍｍまで下降した際に電波吸収層３ｂが剥がれなかったものを○、剥がれたのものを×とした。
【００５５】
電磁波減衰効果の測定は、図３（ａ）に示すように、基体５ａの凹部の底面に高周波素子６をＡｕ−Ｓｎロウ材で接合し、電波吸収蓋部材１を基体５ａにシーム溶接した高周波装置４の各試料を作製して、キャビティ共振抑制効果の評価を行った。すなわち、ネットワークアナライザー（アジレントテクノロジー社製「ＨＰ8510Ｃ」）を用いて、Ｓパラメータ（高周波入出力の比）の値からキャビティ共振抑制効果を測定した。
【００５６】
具体的には、高周波装置４内にマイクロストリップスルーラインが形成された配線基板を配置し、基体５ａの凹部の側面に取り付けられた高周波入出力端子とマイクロストリップスルーラインをＡｕ−Ｓｎ合金ロウ等のロウ材で電気的に接続して、高周波入出力端子とネットワークアナライザーを接続した。基体５ａの上面の凹部の周囲に電波吸収蓋部材１を配置することにより、高周波装置４内部は空洞共振器となり、試料サイズから決まる共振周波数とネットワークアナライザーから入射される高周波信号の周波数が一致したとき、マイクロストリップスルーラインからの放射を共振させてＳパラメータを測定した。このとき、電波吸収層３ｂがない状態を基準とし、キャビティ共振抑制効果はその基準に対して共振量が20ｄB以下であれば○、20ｄBを超えれば×とした。評価結果を表１に示す。
【００５７】
【表１】

【００５８】
表１より、磁性材としてのパーマロイが90質量％を超えるもの（Ｎｏ．１）は、電波吸収層３ｂにおける磁性材の分散性が悪いために接着強度が弱くなり、電波吸収層３ｂが金属蓋体２から剥離して接着不良が発生した。また、パーマロイが51質量％未満のもの（Ｎｏ．５）は、通炉後に20ＧＨｚ以上40ＧＨｚ未満の周波数帯域でのキャビティ共振抑制効果が劣化した。
【００５９】
次に、低融点ガラスが40質量％を超えるもの（Ｎｏ．６）は、電波吸収層３ｂに反りが発生した。また、低融点ガラスが５質量％未満のもの（Ｎｏ．10）は、磁性材の分散性が悪くなり、電波吸収層３ｂの強度が著しく低下したため電波吸収層３ｂの剥離が発生した。
【００６０】
チタン酸バリウムが20質量％を超えるもの（Ｎｏ．11）は、電波吸収層３ｂにおける低融点ガラスに対するチタン酸バリウムの分散性が悪いために接着強度が弱くなり、電波吸収層３ｂが金属蓋体２から剥離して接着不良が発生した。一方の１質量％未満のもの（Ｎｏ．15）は１ＧＨｚ以上20ＧＨｚ未満の周波数帯域でのキャビティ共振抑制効果が劣化した。これは、銀−リン系の低融点ガラスの誘電率が鉛系の低融点ガラスと比べて極めて小さいためと、キャビティ共振抑制効果が電波吸収層３ｂにおける磁性材の粒子間距離に依存するためであり、磁性材の含有量が少ないと通炉後にガラス成分が速やかに固化して均一な磁性材の粒子間距離が得られないからと考えられる。
【００６１】
これに対し、磁性材の含有量が51乃至90質量％で、低融点ガラスの含有量が５乃至40質量％で、チタン酸バリウムの含有量が１乃至20質量％である本発明のもの（Ｎｏ．12〜14）は、いずれも電波吸収蓋部材１の反りが小さく、接着強度、キャビティ共振抑制効果も優れていた。
【００６２】
ガラスの軟化点が250℃未満のもの（Ｎｏ．16）は、電波吸収蓋部材１を金属製の基体５ａにシーム溶接した際にガラスが溶融軟化したため、製品として使用できなくなった。また、ガラスの軟化点が500℃を超えるもの（Ｎｏ．21）は、500℃を超える高温下で通炉するので電波吸収蓋部材１の反りが大きくなり、製品として使用できなくなった。
【００６３】
これに対して、ガラスの軟化点が250乃至500℃である本発明のもの（Ｎｏ．17〜20）は、いずれも電波吸収蓋部材１の反りが小さく、接着強度、キャビティ共振抑制効果も優れていた。
【００６４】
電波吸収層３ｂの厚みが200μｍ未満のもの（Ｎｏ．22）は、キャビティ共振抑制効果が悪く、製品として使用できなくなった。また、電波吸収層３ｂの厚みが500μｍを超えるもの（Ｎｏ．26）は、電波吸収蓋部材１全体が薄型化できず、またスクリーン印刷の作業性が悪いので実用的でなかった。
【００６５】
これに対して、電波吸収層３ｂの厚みが200乃至500μｍである本発明のもの（Ｎｏ．23〜25）は、いずれも電波吸収蓋部材１の反りが小さく、接着強度、キャビティ共振抑制効果も優れていた。
【００６６】
電波吸収体３として、上記のＮｏ．２４の試料において金属層３ａを有していないものを比較例（Ｎｏ．２４Ａ）とし、Ｎｏ．２４の試料において金属層３ａの種類を変えた試料（Ｎｏ．２７〜３１）を作製した。これらについて、上記と同様に、電波吸収蓋部材１の反り、金属蓋体２と電波吸収層３ｂとの接着強度、キャビティ共振抑制効果を測定し、その結果を表２に示す。
【００６７】
【表２】

【００６８】
表２より、金属層３ａがＴｉ、ＺｒおよびＨｆのうちの１種以上の活性金属を含有したＡｇ−Ｃｕ合金を主成分とするものである試料（Ｎｏ．27〜31）は、電波吸収蓋部材１の反りがいずれも小さく、キャビティ共振抑制効果も優れていた。さらに接着強度についても、３点曲げ試験でプッシュプルゲージが1.0ｍｍまで下降した際に全く問題なく、さらに下降させ2.0ｍｍでも金属層３ａおよび電波吸収層３ｂが剥がれず、非常に強固に被着されたものとなった。なお、表２で、2.0ｍｍまで下降しても剥がれなかったものを◎とした。
【００６９】
【発明の効果】
本発明の電波吸収蓋部材は、平板状の金属蓋体の一主面に、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層と、該金属層の酸化層と、磁性材を５１乃至９０質量％および軟化点が２５０乃至５００℃の低融点ガラスを５乃至４０質量％ならびにチタン酸バリウムを１乃至２０質量％含有する電波吸収層とが順次積層された電波吸収体が形成されており、一主面の電波吸収体が被着されていない外周部が、基体の上面の凹部の周囲にロウ付けおよび抵抗溶接の少なくとも一方で接合されていることから、耐熱性に優れたものとなり、高周波素子の熱や高周波装置を外部電気回路基板等に半田等で接合する際の熱によって電波吸収層が金属蓋体から剥離することがなくなる。また、電波吸収層が強誘電体であるチタン酸バリウムを含んでいることから、電波吸収効果が大幅に向上する。さらに、電波吸収層の厚みが２００乃至５００μｍであることから、電波吸収蓋部材の大幅な薄型化が可能となり、高周波装置の大幅な低背化につながる。
【００７０】
また、電波吸収層は、Ｔｉ，ＺｒおよびＨｆのうちの１種以上を含有したＡｇ−Ｃｕ合金を主成分とする金属層と金属層の酸化層とを介して、金属蓋体の一主面に積層されていることから、金属層に含有されるＴｉ，Ｚｒ，Ｈｆの活性金属が金属蓋体の金属粒界に拡散して金属蓋体と金属層とを強固に接合するとともに、金属層の酸化層の酸化物が電波吸収層中のガラスの酸化物成分と反応して金属層と電波吸収層とを強固に接合する。その結果、金属蓋体を、高周波素子を収容した基体にシーム溶接やロウ付けする際に230〜240℃の熱履歴が加わったとしても、電波吸収層が熱によって剥離することがなくなる。
【００７１】
また、電波吸収層が電波吸収して電磁波のエネルギーを熱に変換した際に、その熱を互いに強固に接合された電波吸収層、金属層および金属蓋体を介して外部に効率良く放熱させることができる。
【００７２】
本発明の高周波装置は、上面に形成された凹部の底面に高周波素子が載置される載置部を有する基体と、載置部に載置固定された高周波素子と、一主面が高周波素子に対向するように、基体の上面の凹部の周囲に外周部がロウ付けおよび抵抗溶接の少なくとも一方で接合された本発明の電波吸収蓋部材とを具備していることにより、電波吸収層が熱によって剥れることのない低背化されたものとなるとともに、内部で電磁波の共振が発生するのを抑えることができる。その結果、マイクロ波帯やミリ波帯の高周波帯域で良好にＥＭＩ対策の施された高周波装置を作製することができる。
【図面の簡単な説明】
【図１】本発明の電波吸収蓋部材の実施の形態の一例を示す断面図である。
【図２】図１の電波吸収蓋部材の要部拡大断面図である。
【図３】（ａ），（ｂ）は本発明の高周波装置についてそれぞれ実施の形態の例を示す断面図である。
【図４】従来の電波吸収蓋部材の断面図である。
【図５】従来の高周波装置の断面図である。
【符号の説明】
１：電波吸収蓋部材
２：金属蓋体
３：電波吸収体
３ａ：金属層
３ｂ：電波吸収層
３ｃ：酸化層
４：高周波装置
５ａ，５ｂ：基体
６：高周波素子[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a radio wave absorption lid member and a high frequency device used for a high frequency device that accommodates a high frequency element, and more particularly to a radio wave absorption lid member and a high frequency device that have excellent high frequency (electromagnetic wave) absorption characteristics in a microwave band and a millimeter wave band.
[0002]
[Prior art]
FIG. 4 is a cross-sectional view of a conventional radio wave absorption lid member, and FIG. 5 is a cross-sectional view of a conventional high-frequency device. As shown in these drawings, 11 is a radio wave absorption lid member, 12 is a metal lid, 13 is a radio wave absorption layer, 14 is a high frequency device, 15 is a base, 16 is a high frequency element, and S is a bonding material.
[0003]
In recent years, electronic devices have become increasingly faster, higher density, and digitized, and the trend toward smaller and more multifunctional devices is also accelerating. Due to the demand for smaller and more multifunctional electronic devices, the high-frequency element 16 used in the microwave band and the millimeter wave band in particular has an extremely high component mounting density on the wiring board. There is a problem that electromagnetic interference occurs in other high-frequency elements. This is caused by a large number of semiconductor elements as the high-frequency element 16, and the weak electromagnetic waves generated in the individual semiconductor elements become interference waves (radiated noise) for other semiconductor elements, and the coupling between wiring lines or between pins This is because an increase in coupling, performance degradation or abnormal resonance due to electromagnetic interference due to radiation noise is induced, and electromagnetic interference occurs.
[0004]
Conventionally, for such so-called electromagnetic interference, a noise filter is inserted into the circuit, or electromagnetic shielding is formed by surrounding the high-frequency element 16 with a case coated with a conductive layer such as a metal plate or a metal plating layer. The electromagnetic wave absorbing layer 13 made of an electromagnetic wave absorbing sheet is applied to the surface of the circuit board and the high frequency device 14 with a bonding material S such as a thermosetting resin, low melting point glass or solder and a low melting point brazing material to Obstacles have been suppressed (see Patent Document 1 below).
[0005]
In addition, EMI (Electro Magnetic Interference) countermeasure parts made of a composite magnetic material that is needle-shaped or flat and has a soft magnetic powder having an oxide film on the surface and an organic binder, etc. It has been proposed to suppress electromagnetic interference by placing the device on the upper surface of the device (see Patent Document 2 below).
[0006]
Further, glass or ceramics as a matrix, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Fe, Ni, Co, Cu, Al, Mg, Zn and their alloys, stainless steel, permalloy and An electromagnetic wave absorbing material made of a composite material having at least one metal particle selected from super heat resistant alloys as a composite phase is disclosed (see Patent Document 3 below).
[0007]
[Patent Document 1]
JP 2002-289720 A
[Patent Document 2]
JP-A-10-64714
[Patent Document 3]
JP 9-255408 A
[0008]
[Problems to be solved by the invention]
However, the means described in Patent Document 1, such as affixing the radio wave absorbing layer 13 made of a radio wave absorbing sheet to the surface of the high frequency device 14, increases the overall thickness of the high frequency device 14, which is disadvantageous for downsizing the device. It is. In addition, the radio wave absorption layer 13 is a mixture of rubber and epoxy resin with a magnetic material, and the radio wave absorption layer 13 is bonded to the metal lid 12 with a resin adhesive. Since the heat resistance of the adhesive is very small, the radio wave absorption layer 13 is easily warped by the heat of the high frequency element 16 and the radio wave absorption layer 13 is peeled off from the metal lid 12.
[0009]
Moreover, since the composite magnetic body using the flat and needle-shaped soft magnetic powder used as an EMI countermeasure part described in Patent Document 2 also contains an organic binder, it is inferior in heat resistance and dimensional stability. There was a problem. Therefore, when this composite magnetic body is used as a component part of the high-frequency device 14, there is a problem in that it cannot be joined with a thermosetting resin, a low melting point brazing material, low melting point glass or the like.
[0010]
Further, the radio wave absorption material described in Patent Document 3 composed of a composite material having glass or ceramics as a matrix and Ti or other metal particles as a composite phase is itself excellent in heat resistance and mechanical properties. It is. However, in Patent Document 3, such a radio wave absorbing material is applied to other metal lids or the like with good bondability, and is suitably applied to radio wave absorbing lid members, packages, electronic devices, semiconductor devices, and the like. It is not disclosed at all.
[0011]
Accordingly, the present invention has been completed in view of the above-described conventional problems, and an object of the present invention is to enable the radio wave absorption layer to be directly and firmly attached to the radio wave absorption cover member so that the radio wave absorption layer is peeled off by heat. Radio wave absorption lid member capable of producing a low-frequency high-frequency device that can be prevented from being produced, and a small-sized radio wave using the radio wave absorption lid member that has been well-measured for EMI in the high frequency band of the microwave band and the millimeter wave band The object is to provide a high-frequency device.
[0012]
[Means for Solving the Problems]
  The radio wave absorption lid member of the present invention,FlatA metal layer mainly composed of an Ag—Cu alloy containing at least one of Ti, Zr, and Hf, an oxide layer of the metal layer, and a magnetic material are formed on one main surface of the metal lid. An electromagnetic wave absorbing layer containing 5 to 40% by mass of low melting point glass having a mass% and a softening point of 250 to 500 ° C. and 1 to 20% by mass of barium titanate and having a thickness of 200 to 500 μm is sequentially laminated.Radio wave absorber is formedAnd the radio wave absorption of the one main surfacebodyThe outer peripheral portion to which no is applied is joined to at least one of brazing and resistance welding around the recess on the upper surface of the base body.
[0013]
  The radio wave absorption lid member of the present invention,FlatA metal layer mainly composed of an Ag—Cu alloy containing at least one of Ti, Zr, and Hf, an oxide layer of the metal layer, and a magnetic material are formed on one main surface of the metal lid. An electromagnetic wave absorbing layer containing 5 to 40% by mass of low melting point glass having a mass% and a softening point of 250 to 500 ° C. and 1 to 20% by mass of barium titanate is sequentially laminated.Radio wave absorber is formedAnd absorption of radio waves on one main surfacebodySince the outer peripheral portion to which no coating is applied is joined to at least one of brazing and resistance welding around the concave portion on the upper surface of the base body, the heat resistance of the high-frequency element and the high-frequency device are improved. The radio wave absorption layer will not be peeled off from the metal lid due to heat generated when bonding to an external electric circuit board or the like with solder or the like. Moreover, since the radio wave absorption layer contains barium titanate which is a ferroelectric material, the radio wave absorption effect is greatly improved. Furthermore, since the thickness of the radio wave absorption layer is 200 to 500 μm, the radio wave absorption lid member can be significantly reduced in thickness, which leads to a significant reduction in the height of the high frequency device.
[0014]
Further, the radio wave absorption layer is provided on one main surface of the metal lid through a metal layer mainly composed of an Ag-Cu alloy containing one or more of Ti, Zr, and Hf and an oxide layer of the metal layer. Since the active metal of Ti, Zr, and Hf contained in the metal layer is diffused to the metal grain boundary of the metal lid, the metal lid and the metal layer are firmly bonded, and the metal layer The oxide of the oxide layer reacts with the oxide component of the glass in the radio wave absorption layer to firmly bond the metal layer and the radio wave absorption layer. As a result, even when a heat history of 230 to 240 ° C. is applied when the metal lid is seam welded or brazed to the base body containing the high frequency element, the radio wave absorption layer is not peeled off by heat.
[0015]
Also, when the radio wave absorption layer absorbs radio waves and converts the energy of electromagnetic waves into heat, the heat is efficiently radiated to the outside through the radio wave absorption layer, metal layer, and metal lid that are firmly bonded to each other. Can do.
[0016]
  The high-frequency device of the present invention includes a base having a mounting portion on which a high-frequency element is mounted on the bottom surface of a recess formed on the upper surface, and a high-frequency element mounted and fixed on the mounting portion.,in frontThe main surface faces the high-frequency element.The outer peripheral portion is joined to at least one of brazing and resistance welding around the concave portion on the upper surface of the base body.WasThe present inventionAnd a radio wave absorption lid member.
[0017]
According to the above configuration, the high-frequency device of the present invention has a reduced height so that the radio wave absorption layer is not peeled off by heat, and can suppress the occurrence of electromagnetic resonance inside. As a result, it is possible to manufacture a high-frequency device that is satisfactorily subjected to EMI countermeasures in a high-frequency band such as a microwave band or a millimeter wave band.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
The radio wave absorption lid member and high-frequency device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of a radio wave absorption lid member of the present invention, and FIG. 2 is an enlarged cross-sectional view of a main part thereof. In these figures, 1 is a radio wave absorption lid member, 2 is a metal lid body, 3 is a radio wave absorber, 3a is a metal layer, 3b is a radio wave absorption layer, and 3c is an oxide layer. An absorption lid member 1 is configured.
[0019]
  The radio wave absorption lid member 1 of the present invention isFlatA metal layer 3a mainly composed of an Ag—Cu alloy containing one or more of Ti, Zr and Hf, an oxide layer 3c of the metal layer 3a, and a magnetic material are formed on one main surface of the metal lid 2. A radio wave absorption layer 3b containing 5 to 40% by mass of low melting point glass having a softening point of 250 to 500 ° C. and 1 to 20% by mass of barium titanate and having a thickness of 200 to 500 μm. Sequentially stackedRadio wave absorber 3 is formedAnd absorption of radio waves on one main surfaceBody 3The outer peripheral part which is not applied is joined to at least one of brazing and resistance welding around the recesses on the upper surfaces of the base bodies 5a and 5b.
[0020]
The metal lid 2 in the present invention is preferably made of a metal or an alloy such as 42 alloy (Fe—Ni alloy), Fe—Ni—Co alloy, etc., and these match with the electromagnetic shielding property and the heat absorbing layer 3b. Has the advantage of being good. The metal lid 2 is manufactured in a predetermined shape such as a square by punching a base material such as an Fe—Ni—Co alloy with a punching die.
[0021]
A plated layer such as a Ni plated layer or an Au plated layer is formed in the region where the radio wave absorbing layer 3b of the metal lid 2 is not deposited in order to prevent oxidative corrosion and improve brazing. .
[0022]
The radio wave absorption layer 3b of the present invention contains 51 to 90% by mass of a magnetic material, 5 to 40% by mass of a low melting point glass having a softening point of 250 to 500 ° C., and 1 to 20% by mass of barium titanate. Is 200 to 500 μm. As a result, unlike the conventional rubber or resin that only has a heat resistance of about 200 ° C., a magnetic material is mixed, it has excellent heat resistance and is not attached using an adhesive. No peeling from 2. Therefore, the radio wave absorption layer 3b has excellent heat resistance, and the radio wave absorption layer 3b is peeled off from the metal lid 2 by heat of the high frequency element or heat generated when the high frequency device is joined to an external electric circuit board by solder or the like. There is no longer to do. In addition, since the thickness of the radio wave absorption layer 3b is 200 to 500 μm, the radio wave absorption lid member 1 can be significantly reduced in thickness, leading to a significant reduction in the height of the high frequency device.
[0023]
Moreover, it is preferable to use lead-free low-melting glass that does not contain lead as the low-melting glass, and it is possible to produce a glass that is environmentally friendly, and there is no outgassing or bleed when the low-melting glass is heated and melted.
[0024]
Magnetic materials include Fe-B-Si alloys, Fe-B-Si-C alloys, Fe-B-Si-Cr alloys, Fe-Co-B-Si alloys, Fe-Ni-Mo-B. Alloy, Co-Fe-Ni-Mo-B-Si alloy, Co-Fe-Ni-B-Si alloy and other high magnetic permeability amorphous magnetic metals and amorphous magnetic alloys, or 36-permalloy (Fe Fe-Ni alloy containing 36% by mass), 45-permalloy, 78-permalloy, supermalloy (quenched heat-treated Mo-containing Fe-Ni alloy), Cr-permalloy (Cr-containing Fe-Ni alloy), Mo-permalloy (Mo-containing) Fe-Ni alloy), [mu] -metal ([mu] -metal: Cr, Cu-containing Fe-Ni alloy), or the like, or pure iron, mild steel, Fe-Si alloy, Fe-Al alloy, Fe- Si-Al alloy, C -Fe alloy, Mn-Zn ferrite, Ni-Zn ferrite, Cu-Zn ferrite, Cu-Zn-Mg ferrite, Mn-Mg-Al ferrite, Y-type hexagonal ferrite, Z-type hexagonal ferrite, There are M-type hexagonal ferrites and the like, which are composed of at least one of these. In particular, an amorphous magnetic metal, an amorphous magnetic alloy, or a Ni—Fe alloy having a high magnetic permeability is preferable because it has a high radio wave absorption effect.
[0025]
For example, the above-mentioned Fe—B—Si alloy means an alloy containing Fe, B, and Si as main components (including about 50 mass% or more).
[0026]
Further, as a low melting point glass having a softening point of 250 to 500 ° C., it is melted at as low a temperature as possible from the viewpoint of reducing the thermal effect on the high frequency element 6 (FIG. 3) and reducing the residual stress in the glass. Possible are preferred, for example Na₂OB₂O₃Borates such as Na, Na₂OB₂O₃-P₂O₅Phosphate such as Lithium, Li₂O-GeO₂Germanic acid salt such as Ta, Ta₂O₅-B₂O₃System thalates, Na₂O-MoO₃Molybdate such as V, V₂O₅-GeO₂-P₂O₅Examples thereof include vanadates, tellurates, fluorides, fluorophosphates, chalcogenides, oxychalcogenides, and the like. In particular, a glass composed of 10 to 50% by mass of silver oxide and 10 to 20% by mass of silver iodide is preferable because its softening point is about 280 ° C. and excellent heat resistance.
[0027]
If the content of barium titanate contained in the radio wave absorption layer 3b is less than 1% by mass, the radio wave absorption characteristics in the 1 to 20 GHz band are insufficient. If it exceeds 20% by mass, the dispersibility with the low-melting glass is deteriorated, the strength of the radio wave absorbing layer 3b is lowered, and it is easy to peel off.
[0028]
When the content of the magnetic material is less than 51% by mass, it becomes insufficient to suppress the resonance of electromagnetic waves inside the high-frequency device when it is formed as a high-frequency device, and the radio wave absorption layer 3b is warped and easily peels off. . If it exceeds 90% by mass, the dispersibility of the magnetic material in the form of powder into the low-melting glass is deteriorated, the strength of the radio wave absorption layer 3b is remarkably lowered, and the radio wave absorption layer 3b is easily peeled off.
[0029]
When the low melting point glass is less than 5% by mass, the dispersibility of the magnetic material is deteriorated, the strength of the radio wave absorption layer 3b is remarkably lowered, and the radio wave absorption layer 3b is easily peeled off. On the other hand, when it exceeds 40% by mass, it becomes insufficient to suppress the resonance of electromagnetic waves inside the high frequency device when it is formed into a high frequency device, and the radio wave absorbing layer 3b is warped and easily peels off.
[0030]
If the softening point of the low melting point glass is less than 250 ° C., the radio wave absorption layer 3b is easily melted when the radio wave absorption lid member 1 is seam welded or brazed to the base body containing the high frequency element 6. On the other hand, when the softening point of the low-melting glass exceeds 500 ° C., the magnetic material aggregates. As a result, the strength of the radio wave absorption layer 3b is remarkably reduced, and the radio wave absorption layer 3b is easily peeled off.
[0031]
If the thickness of the radio wave absorption layer 3b is less than 200 μm, the radio wave absorption characteristics tend to be insufficient. If the thickness exceeds 500 μm, the entire radio wave absorption lid member 1 becomes thick and it is difficult to reduce the thickness. Further, the metal lid 2 is warped due to a difference in thermal expansion between the metal lid 2 and the radio wave absorption layer 3b, and the radio wave absorption layer 3b is easily peeled off.
[0032]
In the radio wave absorption lid member 1 of the present invention, the radio wave absorption layer 3b includes a metal layer 3a and a metal layer 3a mainly composed of an Ag-Cu alloy containing one or more of Ti, Zr and Hf which are active metals. The active metal of Ti, Zr, Hf contained in the metal layer 3a diffuses into the metal grain boundary of the metal lid 2 because it is laminated on one main surface of the metal lid 2 via the oxide layer 3c. The metal lid 2 and the metal layer 3a are firmly bonded to each other, and the oxide of the oxide layer 3c of the metal layer 3a reacts with the oxide component of the glass in the radio wave absorption layer 3b to react with the metal layer 3a and the radio wave absorption layer. 3b is firmly joined. As a result, even if a heat history of 230 to 240 ° C. is applied when the metal lid 2 is seam welded or brazed to the base body, the radio wave absorption layer 3b is not peeled off by heat.
[0033]
Further, when the radio wave absorption layer 3b absorbs radio waves and converts the energy of electromagnetic waves into heat, the heat is efficiently transmitted to the outside through the radio wave absorption layer 3b, the metal layer 3a, and the metal lid 2 that are firmly bonded to each other. It can dissipate heat well.
[0034]
The radio wave absorbing layer 3b and the metal layer 3a are attached to the metal lid 2 by the following method. First, an active metal paste obtained by mixing an Ag-Cu alloy powder and one or more active metal powders of Ti, Zr and Hf, an organic binder such as an acrylic resin, a solvent such as toluene and acetone, The body 2 is screen-printed so as to have a thickness of about 70 μm, and the metal layer 3a is deposited by a method in which the body 2 is heat-treated in a reducing atmosphere at a temperature of about 800 ° C. to adhere to the metal lid 2. Next, a magnetic material paste obtained by adding and mixing an organic solvent and a solvent to a low-melting glass containing a magnetic material and barium titanate is screen-printed on the metal lid 2 so as to have a thickness of 200 to 500 μm. The magnetic material paste layer to be the radio wave absorption layer 3b was formed and baked in the atmosphere at about 350 to 600 ° C., so that the glass component of the radio wave absorption layer 3b and the active metal of the metal layer 3a were oxidized. Oxide layer 3c is formed simultaneously. Thereby, the radio wave absorption layer 3b is firmly attached to the metal layer 3a via the oxide layer 3c.
[0035]
The thickness of the metal layer 3a is preferably 50 to 100 μm. When the thickness is less than 50 μm, the oxide layer 3c formed by oxidizing the active metal tends not to have a sufficient thickness. When the thickness exceeds 100 μm, a non-uniform portion may be generated in the metal layer 3a when heat-treated in a reducing atmosphere.
[0036]
The thickness of the oxide layer 3c is preferably 1 to 3 μm. When the thickness is less than 1 μm, the bonding strength between the metal layer 3a and the radio wave absorption layer 3b is weak, and the radio wave absorption layer 3b is easily peeled off from the metal layer 3a by heat. When the thickness exceeds 3 μm, excessive oxidation occurs, and bubbles are easily trapped at the bonding interface between the oxide layer 3c and the radio wave absorption layer 3b. Therefore, the bonding area is reduced and the radio wave absorption layer 3b is easily peeled off from the metal layer 3a.
[0037]
Next, the high frequency device 4 using the radio wave absorption lid member 1 of the present invention will be described in detail with reference to FIG. This figure shows an example of an embodiment of the high-frequency device 4 of the present invention, (a) is a cross-sectional view of a high-frequency device using a base 5a made of metal, and (b) uses a base 5b made of an insulator. It is sectional drawing of a high frequency device. As shown in these drawings, 2 is a metal lid, 3 is a radio wave absorber, 4 is a high-frequency device, 5a and 5b are bases, 6 is a high-frequency element, 7 is a metallized layer, and 8 is a sealing material.
[0038]
  The high-frequency device of the present invention includes bases 5a and 5b each having a mounting portion on which a high-frequency element 6 is mounted on the bottom surface of a recess formed on the upper surface, and a high-frequency element 6 mounted and fixed on the mounting portion.,oneThe main surface faces the high frequency element 6The outer peripheral portion is joined to at least one of brazing and resistance welding around the recesses on the upper surfaces of the substrates 5a and 5b.The electromagnetic wave absorbing lid member 1 of the present invention is provided.
[0039]
The bases 5a and 5b in the present invention are provided with a recess for accommodating the high-frequency element 6 in the central portion of the upper surface, and the high-frequency element 6 is formed on the bottom surface of the recess such as low-melting glass, resin adhesive, brazing material, etc. It is bonded and fixed via an adhesive. Further, a plurality of metallized wiring layers and a plurality of lead terminals (not shown) pass through the surfaces of the bases 5a and 5b or penetrate the bases 5a and 5b from the side surface and bottom surface to the outer surface of the recesses of the bases 5a and 5b. In addition, it is hermetically sealed with glass. In the metallized wiring layer and the portion located on the bottom surface of the concave portion of the lead terminal, each electrode of the high-frequency element 6 is electrically connected via a bonding wire or the like (not shown), and is led out to the outer surface of the bases 5a and 5b. This portion is electrically connected to a wiring conductor (not shown) of the external electric circuit board via a conductive connecting member such as a bonding wire.
[0040]
  The base 5a made of metal is made of 42 alloy or Fe—Ni—Co alloy.EqualIt is preferable that the metal base material is punched with a punching die or machined such as cutting to produce a predetermined shape having a recess. A metal such as gold having excellent corrosion resistance and good wettability with a brazing material such as an Au-Sn brazing material or solder is coated on the surface of the substrate 5a to a thickness of 0.1 to 1 μm by a plating method or the like. It is preferable to keep it on.
[0041]
And the circumference | surroundings of the recessed part of the upper surface of the base | substrate 5a and the outer peripheral part of the lower surface of the electromagnetic wave absorption cover member 1 are joined by resistance welding, such as seam welding. Alternatively, they may be joined via a sealing material 8 made of a brazing material deposited on the outer peripheral portion of the lower surface of the radio wave absorption lid member 1, or seam welding and brazing may be combined.
[0042]
For example, when the base body 5a and the radio wave absorption lid member 1 are seam welded, the radio wave absorption lid member 1 is placed around the recess on the upper surface of the base body 5a, and the upper surface of the radio wave absorption lid member 1 is placed under a nitrogen atmosphere. Applying a roller electrode that is energized to the outer periphery, pressing the radio wave absorption lid member 1 against the substrate 5a with a roller electrode at a constant pressure, rotating the roller electrode, and press-bonding for 0.5 to 10 minutes allows airtight bonding To do.
[0043]
On the other hand, in the case of the base 5b made of an insulator, the base 5b is mainly composed of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, glass ceramics, or the like. It consists of an inorganic material such as a sintered body (ceramics) or a resin. For example, when the substrate 5b is made of an aluminum oxide sintered body, first, alumina (Al₂O₃) And silica (SiO₂), Calcia (CaO), magnesia (MgO) and other raw material powders are mixed with an appropriate organic solvent and solvent to form a slurry, which is formed into a sheet by a conventionally known doctor blade method or calendar roll method. Molding to obtain a ceramic green sheet (hereinafter also referred to as green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of green sheets are laminated and fired at a temperature of about 1600 ° C.
[0044]
In the case of the base body 5 b, a frame-like metallized layer 7 for bonding to the radio wave absorption lid member 1 is attached around the recess on the upper surface. The metallized layer 7 and the metallized wiring layer formed on the side and bottom surfaces of the recess are made of a high melting point metal such as tungsten, molybdenum, manganese, etc., and a green paste is prepared by adding a metal paste obtained by adding an organic solvent and a solvent to these powders. It is formed by depositing a predetermined pattern on the predetermined position by a well-known screen printing method and baking it at the same time as the green sheet. The surface of the metallized layer 7 is coated with a metal such as gold having excellent corrosion resistance and good wettability with a brazing material such as an Au-Sn brazing material or solder to a thickness of 0.1 to 1 μm by a plating method or the like. It is good to wear and it becomes possible to join with the metal lid 2 without using a flux.
[0045]
In addition, if the flux contained in the solder or the like is scattered inside the high-frequency device 4, the electrode of the high-frequency element 6 is corroded and a disconnection is generated. Therefore, a metal such as gold is plated on the surface of the metallized layer 7. It is preferable that the metallized layer 7 and the radio wave absorption lid member 1 be bonded without using a flux. Then, the radio wave absorption lid member 1 is bonded to the metallized layer 7 through a sealing material 8 formed on the outer peripheral portion of the lower surface thereof.
The base member 5b and the radio wave absorption lid member 1 are joined to the radio wave absorption lid member 1 so that the sealing material 8 is sandwiched between the metallized layer 7 formed around the recess on the upper surface of the base body 5b and the radio wave absorption lid member 1. Is placed on the upper surface of the base body 5b, and the radio wave absorption cover member 1 is pressed against the base body 5b with a constant pressure while being put in a sealing furnace in a nitrogen atmosphere at a peak temperature of about 280 to 300 ° C. for 0.5 to 10 minutes. By melting 8, the sealing material 8 flows out, forms a fillet, and is joined airtightly.
[0046]
Thus, the radio wave absorption lid member 1 and the high-frequency device 4 of the present invention mount and fix the high-frequency element 6 such as a semiconductor element on the mounting portion on the bottom surface of the recess of the bases 5a and 5b via the resin adhesive or the like. 6 is connected to a lead terminal or a metallized wiring layer via a bonding wire or the like, and thereafter, the radio wave absorption lid member 1 is joined by seam welding around the recess on the upper surface of the base 5a, or the radio wave absorption lid By sealing the base material 5a, 5b and the radio wave absorption lid member 1 by heating and melting the sealing material 8 applied to the outer peripheral portion of the lower surface of the member 1 and bonding it to the metallized layer 7, a product is obtained. The high-frequency device 4 becomes.
[0047]
  Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention. For example, in the above-described embodiment, an example in which a semiconductor element such as IC or LSI is used as the high-frequency element 6 has been described. However, an electronic component such as a piezoelectric vibrator or a surface acoustic wave element can be used as the high-frequency element 6.The
[0048]
【Example】
Examples of the radio wave absorption lid member of the present invention will be described below.
[0049]
The radio wave absorbing lid member 1 of FIG. 1 was manufactured as follows. First, a metal lid 2 made of a Fe-Ni-Co alloy having a rectangular shape of 21.1 mm in length, 19.6 mm in width, and 0.3 mm in thickness is prepared, and the portion other than the portion where the radio wave absorption layer 3b is formed. A 2.0 μm thick Ni plating layer and a 0.5 μm thick Au plating layer were deposited on the entire surface.
[0050]
Next, Ag 72% by mass-Cu 28 containing 3% by mass of Ti as an active metal (100% by mass of the Ag—Cu alloy) at the site where the radio wave absorption layer 3b of the main surface of the metal lid 2 is formed. A metal layer 3a made of a mass% Ag—Cu eutectic was formed to a thickness of 70 μm by screen printing, and was heat-treated at a temperature of 800 to 850 ° C. in a reducing atmosphere to adhere to the metal lid 2.
[0051]
The radio wave absorbing layer 3b is made of a magnetic material composed of permalloy (Fe-Ni alloy of 42 mass% of Fe and 58 mass% of Ni) and a silver-phosphorous low-melting glass (softening point of about 280 ° C) containing barium titanate. Mix in various proportions (see Table 1 below), add a small amount of organic solvent (“Mentanol” manufactured by Nippon Kayaku Yakuhin Co., Ltd.), and measure a size of 19.1 mm in length × 17.6 mm in width by screen printing, It was applied on the metal layer 3a on one main surface of the metal lid 2 so as to have various thicknesses (see Table 1 below) after firing. This was baked in a furnace at a temperature of 300 ° C. to 350 ° C. to form an oxide layer 3 c having a thickness of 1.5 μm, and a radio wave absorption layer 3 b was deposited on the metal lid 2.
[0052]
About the obtained various samples, the curvature of the electromagnetic wave absorption cover member 1, the adhesive strength of the metal cover body 2 and the electromagnetic wave absorption layer 3b, and the electromagnetic wave attenuation effect were measured.
[0053]
In addition, about the curvature of the electromagnetic wave absorption cover member 1, compared with before and after passing through the furnace, the curvature (maximum height difference) after passing through the furnace was less than 0.15 mm, and was 0.15 mm or more. The thing was made into x.
[0054]
The adhesive strength is measured by performing a three-point bending test with a load of 49 N (Newton) with the radio wave absorption layer 3 b attached to one main surface of the metal lid 2, and the push-pull gauge is lowered to 1.0 mm. When the radio wave absorbing layer 3b was not peeled off, the case where the wave absorbing layer 3b was not peeled was marked with ◯, and the case where it was peeled off was marked with ×.
[0055]
As shown in FIG. 3A, the electromagnetic wave attenuation effect is measured by bonding a high frequency element 6 to the bottom surface of the recess of the base 5a with an Au—Sn brazing material and seam welding the radio wave absorption lid member 1 to the base 5a. Each sample of the apparatus 4 was produced and the cavity resonance suppression effect was evaluated. That is, the cavity resonance suppression effect was measured from the value of the S parameter (ratio of high frequency input / output) using a network analyzer (“HP8510C” manufactured by Agilent Technologies).
[0056]
Specifically, a wiring board on which a microstrip through line is formed is arranged in the high frequency device 4, and the high frequency input / output terminal and the microstrip through line attached to the side surface of the concave portion of the base 5a are connected to an Au—Sn alloy braze or the like. A high frequency input / output terminal and a network analyzer were connected electrically with a brazing material. By arranging the radio wave absorption lid member 1 around the recess on the upper surface of the base 5a, the inside of the high-frequency device 4 becomes a cavity resonator, and the resonance frequency determined from the sample size matches the frequency of the high-frequency signal incident from the network analyzer. At that time, the S parameter was measured by resonating the radiation from the microstrip through line. At this time, the state without the radio wave absorption layer 3b was used as a reference, and the cavity resonance suppression effect was evaluated as ◯ when the resonance amount was 20 dB or less with respect to the reference, and × when it exceeded 20 dB. The evaluation results are shown in Table 1.
[0057]
[Table 1]

[0058]
According to Table 1, when the permalloy as the magnetic material exceeds 90% by mass (No. 1), the magnetic material in the radio wave absorption layer 3b has poor dispersibility, so that the adhesive strength is weak, and the radio wave absorption layer 3b has a metal lid. Peeling from the body 2 resulted in poor adhesion. Moreover, the permalloy of less than 51 mass% (No. 5) deteriorated the cavity resonance suppression effect in the frequency band of 20 GHz or more and less than 40 GHz after passing through the furnace.
[0059]
Next, when the low melting point glass exceeded 40 mass% (No. 6), the radio wave absorption layer 3b was warped. Further, when the glass having a low melting point of less than 5% by mass (No. 10), the dispersibility of the magnetic material was deteriorated, and the strength of the radio wave absorption layer 3b was remarkably lowered, so that the radio wave absorption layer 3b was peeled off.
[0060]
When barium titanate exceeds 20% by mass (No. 11), the dispersibility of barium titanate with respect to the low melting point glass in the radio wave absorption layer 3b is poor, so that the adhesive strength is weak, and the radio wave absorption layer 3b is a metal lid. 2 peeled off and adhesion failure occurred. On the other hand, in the case of less than 1% by mass (No. 15), the cavity resonance suppression effect in the frequency band of 1 GHz or more and less than 20 GHz deteriorated. This is because the dielectric constant of the silver-phosphorus low melting point glass is extremely smaller than that of the lead low melting point glass, and the cavity resonance suppression effect depends on the interparticle distance of the magnetic material in the radio wave absorption layer 3b. It is considered that when the content of the magnetic material is small, the glass component quickly solidifies after passing through the furnace and a uniform distance between the particles of the magnetic material cannot be obtained.
[0061]
On the other hand, the magnetic material content is 51 to 90% by mass, the low-melting glass content is 5 to 40% by mass, and the barium titanate content is 1 to 20% by mass ( Nos. 12 to 14) all had small warpage of the radio wave absorption lid member 1 and were excellent in adhesive strength and cavity resonance suppression effect.
[0062]
The glass having a softening point of less than 250 ° C. (No. 16) cannot be used as a product because the glass melted and softened when the radio wave absorption lid member 1 was seam welded to the metal base 5a. Further, the glass having a softening point exceeding 500 ° C. (No. 21) passed through the furnace at a high temperature exceeding 500 ° C., so that the warp of the radio wave absorption lid member 1 became large, and it could not be used as a product.
[0063]
On the other hand, the glass softening point of the present invention (Nos. 17 to 20) having a softening point of 250 to 500 ° C. has low warpage of the radio wave absorption lid member 1 and is excellent in adhesive strength and cavity resonance suppression effect. It was.
[0064]
When the radio wave absorption layer 3b had a thickness of less than 200 μm (No. 22), the cavity resonance suppression effect was poor and it could not be used as a product. In addition, the case where the thickness of the radio wave absorbing layer 3b exceeds 500 μm (No. 26) is not practical because the entire radio wave absorbing lid member 1 cannot be thinned and the screen printing workability is poor.
[0065]
On the other hand, in the present invention (No. 23 to 25) in which the thickness of the radio wave absorption layer 3b is 200 to 500 μm, the warp of the radio wave absorption cover member 1 is small, and the adhesive strength and the cavity resonance suppressing effect are also achieved. It was excellent.
[0066]
Radio wave absorptionCollection3 and No. 3 above. 24 samples that do not have the metal layer 3a are referred to as comparative examples (No. 24A). Samples (Nos. 27 to 31) in which the type of the metal layer 3a was changed in 24 samples were produced. In the same manner as described above, the warpage of the radio wave absorption lid member 1, the adhesive strength between the metal lid 2 and the radio wave absorption layer 3b, and the cavity resonance suppression effect were measured. The results are shown in Table 2.
[0067]
[Table 2]

[0068]
From Table 2, a sample (No. 27 to 31) in which the metal layer 3a is mainly composed of an Ag—Cu alloy containing one or more active metals of Ti, Zr and Hf is a radio wave absorption lid. The warpage of the member 1 was small and the cavity resonance suppression effect was excellent. Furthermore, regarding the adhesive strength, there is no problem when the push-pull gauge is lowered to 1.0 mm in the three-point bending test, and the metal layer 3a and the radio wave absorbing layer 3b are not peeled off even when lowered to 2.0 mm. It became what was done. In Table 2, those that were not peeled even when lowered to 2.0 mm were marked with ◎.
[0069]
【The invention's effect】
The radio wave absorption lid member of the present invention,FlatA metal layer mainly composed of an Ag—Cu alloy containing at least one of Ti, Zr, and Hf, an oxide layer of the metal layer, and a magnetic material are formed on one main surface of the metal lid. An electromagnetic wave absorbing layer containing 5 to 40% by mass of low melting point glass having a mass% and a softening point of 250 to 500 ° C. and 1 to 20% by mass of barium titanate is sequentially laminated.Radio wave absorber is formedAnd absorption of radio waves on one main surfacebodySince the outer peripheral portion to which no coating is applied is joined to at least one of brazing and resistance welding around the concave portion on the upper surface of the base body, the heat resistance of the high-frequency element and the high-frequency device are improved. The radio wave absorption layer will not be peeled off from the metal lid due to heat generated when bonding to an external electric circuit board or the like with solder or the like. Moreover, since the radio wave absorption layer contains barium titanate which is a ferroelectric material, the radio wave absorption effect is greatly improved. Furthermore, since the thickness of the radio wave absorption layer is 200 to 500 μm, the radio wave absorption lid member can be significantly reduced in thickness, which leads to a significant reduction in the height of the high frequency device.
[0070]
Further, the radio wave absorption layer is provided on one main surface of the metal lid through a metal layer mainly composed of an Ag-Cu alloy containing one or more of Ti, Zr, and Hf and an oxide layer of the metal layer. Since the active metal of Ti, Zr, and Hf contained in the metal layer is diffused to the metal grain boundary of the metal lid, the metal lid and the metal layer are firmly bonded, and the metal layer The oxide of the oxide layer reacts with the oxide component of the glass in the radio wave absorption layer to firmly bond the metal layer and the radio wave absorption layer. As a result, even when a heat history of 230 to 240 ° C. is applied when the metal lid is seam welded or brazed to the base body containing the high frequency element, the radio wave absorption layer is not peeled off by heat.
[0071]
Also, when the radio wave absorption layer absorbs radio waves and converts the energy of electromagnetic waves into heat, the heat is efficiently radiated to the outside through the radio wave absorption layer, metal layer, and metal lid that are firmly bonded to each other. Can do.
[0072]
A high-frequency device according to the present invention includes a base having a mounting portion on which a high-frequency element is mounted on the bottom surface of a recess formed on the upper surface, a high-frequency element mounted and fixed on the mounting portion,,oneThe main surface faces the high-frequency elementThe outer peripheral portion is joined to at least one of brazing and resistance welding around the recess on the upper surface of the base bodyBy providing the radio wave absorption lid member of the present invention, the radio wave absorption layer is reduced in height so as not to be peeled off by heat and suppresses the occurrence of electromagnetic resonance inside. be able to. As a result, it is possible to manufacture a high-frequency device that is satisfactorily subjected to EMI countermeasures in a high-frequency band such as a microwave band or a millimeter wave band.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a radio wave absorption lid member of the present invention.
FIG. 2 is an enlarged cross-sectional view of a main part of the radio wave absorption lid member of FIG.
FIGS. 3A and 3B are cross-sectional views showing examples of embodiments of the high-frequency device of the present invention.
FIG. 4 is a cross-sectional view of a conventional radio wave absorption lid member.
FIG. 5 is a cross-sectional view of a conventional high-frequency device.
[Explanation of symbols]
1: Radio wave absorption lid member
2: Metal lid
3: Radio wave absorber
3a: Metal layer
3b: radio wave absorption layer
3c: oxide layer
4: High frequency equipment
5a, 5b: Base
6: High frequency element

Claims

A metal layer mainly composed of an Ag-Cu alloy containing at least one of Ti, Zr and Hf, an oxide layer of the metal layer, and a magnetic material on one main surface of a flat metal lid An electromagnetic wave absorbing layer containing 51 to 90% by mass, low melting point glass having a softening point of 250 to 500 ° C., 5 to 40% by mass and barium titanate 1 to 20% by mass, and having a thickness of 200 to 500 μm. A laminated radio wave absorber is formed , and an outer peripheral portion of the one main surface where the radio wave absorber is not attached is joined to at least one of brazing and resistance welding around the recess on the upper surface of the substrate. An electromagnetic wave absorbing lid member.

A base having a mounting portion on which a high-frequency element is mounted on the bottom surface of a recess formed on the top surface, a high-frequency element mounted and fixed on the mounting portion, and the one main surface facing the high-frequency element And a radio wave absorbing lid member according to claim 1, wherein the outer peripheral portion is joined to at least one of brazing and resistance welding around the recess on the upper surface of the base. .