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JP4096403B2 - Method for manufacturing electroluminescent element - Google Patents
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JP4096403B2 - Method for manufacturing electroluminescent element - Google Patents

Method for manufacturing electroluminescent element Download PDF

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JP4096403B2
JP4096403B2 JP12272698A JP12272698A JP4096403B2 JP 4096403 B2 JP4096403 B2 JP 4096403B2 JP 12272698 A JP12272698 A JP 12272698A JP 12272698 A JP12272698 A JP 12272698A JP 4096403 B2 JP4096403 B2 JP 4096403B2
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JPH11307248A (en
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稔 熊谷
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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Description

【0001】
【発明の属する技術分野】
この発明は、電界発光素子の製造方法に関し、さらに詳しくは、エレクトロルミネッセンス(以下、ELという)層を電極で挟んでなる電界発光素子の製造方法に関する。
【0002】
【従来の技術】
近年、電界発光素子の発光層に有機EL材料を用いたものが開発され、図7に示すような構造の電界発光素子1が考えられている。即ち、この電界発光素子1は、ガラス基板2の上に格子状にブラックマトリクス8を形成し、所定の配列で色変換膜6R、6Gを形成して保護膜9を全面に形成し、さらにその上に前面電極3、有機EL層4、背面電極5を形成する構造である。
【0003】
【発明が解決しようとする課題】
このような電界発光素子では、色変換膜6R及び色変換膜6Gの色変換効率が異なるためにその膜厚を制御することにより均等な輝度に発光するように制御され、例えば青色光の入射により赤色光の放出を行う色変換膜6Rの厚さは約20μmに設定し、青色光の入射により赤色光の放出を行う色変換膜6Gの厚さは約10μmに設定しているため色変換膜6R、6G間で厚さに差があった。また、青色表示のドット部は色変換膜を配置しないため、R、G、Bの表示部分の間で段差ができ、ともすると有機EL層4のステップカバレージが悪化して、特に前面電極3のエッジ部で有機EL層4が段切れを起こし、前面電極3と背面電極5とがショートしてしまうことが危惧されている。
【0004】
この発明は、ショートの発生の少ない構造の電界発光素子の製造方法を提供することを目的としている。
【0005】
【課題を解決するための手段】
請求項1記載の発明は、第1色変換膜及び第2色変換膜を有する電界発光素子の製造方法において、透明基板上の所定位置に、第1色変換膜をパターン形成する工程と、前記透明基板上に、前記第1色変換膜を完全に覆うとともに所定の箇所に開口部を有する絶縁膜を形成する工程と、前記開口部に、上部が露出するように第2色変換膜を形成する工程と、前記絶縁膜上及び前記第2色変換膜上に表面を平坦にするように保護膜を形成する工程と、前記保護膜上に前面電極膜を形成する工程と、前記前面電極膜上に有機EL層を成膜する工程と、前記有機EL層上に背面電極を形成する工程と、を備えることを特徴としている。
【0006】
従って、請求項1記載の発明では、第2色変換膜に開口部を有する絶縁膜が、第1色変換膜及び第2色変換膜の段差を緩和しているので、前面電極等のステップカバレージを向上することができ、これらの構成膜の段切れを防止することができる。
【0007】
請求項2記載の発明は、請求項1記載の電界発光素子の製造方法であって、前記第1色変換膜及び前記絶縁膜は感光性樹脂材料から形成されることを特徴としている。
【0008】
請求項3に記載の発明は、電界発光素子の製造方法であって、透明基板に、第1開口部及び第2開口部を有する第1絶縁膜を形成する工程と、前記第1開口部に前記第1絶縁膜の表面と面一になるように第1色変換膜を形成する工程と、前記第2開口部上に、第3開口部が形成された第2絶縁膜を形成する工程と、前記第1絶縁膜の前記第2開口部に、前記第2絶縁膜の表面と面一になるように第2色変換膜を形成するように形成する工程と、前記第2絶縁膜上及び前記第2色変換膜上に保護膜を形成する工程と、前記保護膜上に前面電極膜を形成する工程と、前記前面電極膜上に有機EL層を成膜する工程と、前記有機EL層上に背面電極を形成する工程と、を備えることを特徴としている。
【0009】
従って、請求項3記載の発明では、色変換膜材料は解像度が低く、色変換膜材料の感光による加工寸法より、フォトリソグラフィー法を用いた第1絶縁膜の加工寸法の方が微細であるため、第1絶縁膜の開口部に色変換膜を形成することにより、色変換膜の線幅を微細に形成することができる。このため、高精細な表示が行える電界発光素子を製造することが可能となる。また、第1絶縁膜と第2絶縁膜とで第1色変換膜と第2色変換膜との段差を緩和することができるため、前面電極等のステップカバレージを向上することができる。
【0010】
【発明の実施の形態】
以下、この発明に係る電界発光素子の製造方法の詳細を図面に示す実施形態に基づいて説明する。
【0011】
(実施形態1)
図1(a)〜図3(c)を用いて実施形態1を説明する。まず、図1(a)に示すように、ガラス基板11の上へ格子状にブラックマトリクス12を形成する。その後所定の波長域の青色光が入射することにより励起され所定の波長域の緑色光を放出するネガ型光感光性材料を被膜し、このネガ型光感光性材料を残す部分を露光した後に現像して、図1(b)に示すように、ネガ型光感光性材料からなる色変換膜(以下、緑色変換膜という)13を所定の色配列に応じた配列でブラックマトリクス12の開口部13を覆うようにパターニング形成する。なお、緑色変換膜13の厚さは、視認性の良好な輝度の緑色光を放出するに最適な厚さ、例えば約10μmに成膜する。
【0012】
次に、図1(c)に示すように、表示領域全体に平坦化膜14を例えばスピンコーティングにより、上記した緑色変換膜13が完全に埋まるように成膜する。なお、この平坦化膜14の材料は、液晶表示パネル用スペーサ材料として開発された感光性を有する周知のネガ型合成樹脂材料であり、成膜後の光透過率は90%以上である。そして、この平坦化膜14を形成する合成樹脂材料は、液晶表示パネルのギャップ程度の膜厚が成膜できる材料であり、約10数μm程度の厚さまで形成できる。
【0013】
その後、後記する、青色光が入射することにより励起され赤色光を放出する色変換膜(以下、赤色変換膜という)15Aが所定の箇所に配置される部分以外の平坦化膜14になる合成樹脂材料を露光した後、現像して平坦化膜14に図2(a)に示すような開口部14Aを形成する。
【0014】
続いて、図2(b)に示すように、開口部14A及び平坦化膜14の上に赤色変換膜15Aを形成する赤色変換膜材料15を、開口部14Aの深さも含めて、視認性の良好な輝度の赤色光を放出するに最適な厚さ、例えば約20μmの厚さになるようにスピンコーティングにより成膜する。この赤色変換膜15材料は非感光性材料でなるため、次のような方法でパターニングを行う。即ち、フォトリソグラフィー技術を用いて、同図(b)に示すように開口部14Aに対応する赤色変換膜15材料上方にレジストマスク16を残すようにパターニングし、このレジストマスク16を用いて露呈する部分の赤色変換膜材料15をウェットエッチングにより除去する。その結果、図2(c)に示すように、平坦化膜14の開口部14Aから僅かに(2〜3μm程度)突出する赤色変換膜15Aが形成できる。なお、赤色変換膜15A及び緑色変換膜13は、レジストマスク16の形成時のプリベーク及び本ベークの温度に耐えられる材料からなる。
【0015】
次に、図3(a)に示すように、表示領域全体にアクリル系合成樹脂でなる保護膜17をコーティングする。このとき、赤色変換膜15Aの突出寸法は僅かであるため、保護膜17で覆うことができ、保護膜17の表面は平坦に形成できる。その後、保護膜17の上に例えばITO(indium tin oxide)やIn23(ZnO)m(ただし0<m<3)などの透明な導電性材料(好ましくは後記する有機EL層20に対して正孔注入性の高い導電性材料)でなる前面電極膜18を、蒸着法やスパッタ法により成膜する。さらに、前面電極膜18の上に、レジストマスク19をフォトリソグラフィー技術を用いてパターン形成する。なお、このレジストマスク19は、ガラス基板11の上に形成されたブラックマトリクス12の開口部の列又は行に対応する位置に、互いに平行をなすように形成する。そして、このレジストマスク19を用いてウェットエッチング又はドライエッチングを行って図3(b)に示すような前面電極18Aを形成する。
【0016】
その後、図3(c)に示すように、表示領域全体に有機EL層20を成膜し、有機EL層20の上に、上記した前面電極18Aの行又は列に対応するように、MgInやAlLi等の背面電極21をメタルマスクで蒸着形成する。なお、有機EL層20は、前面電極膜18側から順に、Aluminum-tris(8-hydroxyquinolinate)からなる電子輸送層、96重量%の4,4'-Bis(2,2-diphenylvinylene)biphenyl及び4重量%の4,4'-Bis((2-carbazole)vinylene)biphenylからなる発光層、 N,N'-di(α-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamineからなる正孔輸送層の3層で構成され、内部に電流が流れることにより青色波長域の光を発する。このようにして、図3(c)に示すような電界発光素子22を製造することができる。
【0017】
本実施形態の電界発光素子の製造方法では、膜厚差が大きい色変換膜により生じる段差を、平坦化膜14や保護膜17を用いて緩和したことにより、前面電極18A、有機EL層20及び背面電極21を形成する際に、これらのステップカバレージを良好にして段切れが発生するのを防止することができる。
【0018】
以上、本実施形態について説明したが、本実施形態ではブラックマトリクス12の開口部に赤色変換膜15Aや緑色変換膜13を形成したが、ブラックマトリクス12の各開口部にそれぞれ所定のカラーフィルタを形成した後、必要な部分に赤色変換膜15Aや緑色変換膜13を形成することも可能であり、これら赤、緑、青のカラーフィルタにより、色変換膜から出射された赤、緑の色の発光や、色変換膜を透過しないで有機EL層20から出射された青色光の色純度を向上させることも可能となる。また、上記した本実施形態では、保護膜17の上に前面電極18Aを形成したが、素子の信頼性を向上させるために、保護膜17の上に酸化シリコン膜や窒化シリコン膜を成膜した後に前面電極18Aを形成するようにしても勿論よい。なお、上記した実施形態1では、有機EL層20の発光色を青色に設定したが、これに限定されるものではなく、有機EL層20の発光色に応じて、各色変換膜も適宜変更するものであってもよい。さらに、本実施形態では、発光層として有機EL層20を用いたが、無機EL層を用いてもよい。
【0019】
(実施形態2)
図4(a)〜図6(b)を用いて本発明に係る電界発光素子の製造方法の実施形態2について説明する。まず、図4(a)に示すように、ガラス基板11の上へ格子状にブラックマトリクス12を形成する。その後、ネガ型感光性の樹脂をスピンコーティングにより膜厚を制御して成膜後、ブラックマトリクス12の開口部のうち設定された色配列に応じて色変換膜を配置しない部分(青色発光部)のみを露光して、この部分の樹脂を硬化して、図4(b)に示すように、第1平坦化膜14Aをパターン形成する。ここで、第1平坦化膜14Aは、ブラックマトリクス12の開口部のうち色変換膜が配置される開口部に臨むブラックマトリクス12の開口縁まで覆う必要はない。
【0020】
その後、ネガ型感光性の緑色変換膜材料を塗布し、図4(c)に示すように、予め緑色発光部として設定された部分に対応する第1平坦化膜14Aの開口部内の緑色変換膜材料を露光して硬化させた後、第1平坦化膜14Aの表面と面一になるようにエッチバックして緑色変換膜13が形成される。このとき、緑色変換膜13のパターン幅Wは、第1平坦化膜14Aのフォトリソグラフィの精度により決定される。また、予め赤色発光部として設定された部分に対応する第1平坦化膜14Aの開口部内の緑色変換膜13はエッチングにより除去する。
【0021】
次に、図5(a)に示すように、予め赤色発光部として設定された部分に対応する第1平坦化膜14Aの開口部を除いて表示領域全体に第2平坦化膜14Bを形成する。なお、第1平坦化膜膜14Aと第2平坦化膜14Bとで形成される凹部の深さは、約20μm程度になるように設定されている。その後、全面に赤色変換膜材料15をスピンコーティングしエッチバックを行うことにより第2平坦化膜14Bの表面を露呈させる。このとき、第1平坦化膜14Aと第2平坦化膜14Bとブラックマトリクス12の開口部とで形成される凹部内のみに赤色変換膜15Aが形成され、この赤色変換膜15Aの表面と第2平坦化膜14Bの表面とが面一となる。
【0022】
次に、図6(a)に示すように保護膜17を形成した後、図6(b)に示すように、上記した実施形態1と同様に前面電極18A、有機EL層20及び背面電極21を形成することにより、電界発光素子22の製造が完了する。
【0023】
本実施形態では、第1平坦化膜14Aに形成した開口部の幅Kにより緑色変換膜13の幅が決定されると共に、赤色変換膜15Aの幅も第1平坦化膜14Aと第2平坦化膜14Bとに形成した開口部の幅で決定されるため、平坦化膜のフォトリソグラフィーの精度を持って色変換膜を形成することができる。因に、色変換膜のパターニングに際しては、蛍光材料を多量に含む色変換膜材料は透過率が低く解像度が低いため感光させてパターニングした場合、その寸法精度は通常のフォトリソグラフィーのフォトマスク等を用いた最小寸法より、100μm程度大きくなってしまうが、上記したように本実施形態では、透過率が高く解像度の高い材料で形成された第1及び第2平坦化膜の最小寸法までの微細化を可能とすることができる。このため、電界発光素子の表示において高精細化を達成することが可能となる。また、第2平坦化膜14Bの表面に赤色変換膜15Aの上面を面一にすることができるため、その上に形成する保護膜17の膜厚を薄く設定することが可能となり、有機EL層20の発光部と色変換膜との距離を短くできる。このため、視差の影響を大幅に低減させることができる。
【0024】
以上、実施形態2について説明したが、本発明はこれに限定されるものではなく、構成の要旨に付随する各種の変更が可能である。例えば、本実施形態では、保護膜17の上に前面電極18Aを設けたが、上記した実施形態1と同様に酸化シリコン膜や窒化シリコン膜を介して前面電極18Aを形成する構成としてもよい。また、上記した実施形態1で説明したように、カラーフィルタをガラス基板11上に配置する構成としてもよい。なお、上記した実施形態2では、実施形態1同様、有機EL層20の発光色を青色に設定したが、これに限定されるものではなく、有機EL層20の発光色に応じて、各色変換膜も適宜変更するものである。さらに、本実施形態でも、発光層として有機EL層20を用いたが、無機EL層を用いてもよい。
【0029】
【発明の効果】
以上の説明から明らかなように、この発明によれば、各構成層の段切れのない平坦な構造の電界発光素子が製造できる。
【図面の簡単な説明】
【図1】(a)〜(c)は、本発明に係る電界発光素子の製造方法の実施形態1を示す工程断面図。
【図2】(a)〜(c)は、実施形態1を示す工程断面図。
【図3】(a)〜(c)は、実施形態1を示す工程断面図。
【図4】(a)〜(c)は、本発明に係る電界発光素子の製造方法の実施形態2を示す工程断面図。
【図5】(a)〜(c)は、実施形態2を示す工程断面図。
【図6】(a)及び(b)は、実施形態2を示す工程断面図。
【図7】従来の多色表示を行う電界発光素子の断面図。
【符号の説明】
11 ガラス基板
13 緑色変換膜
14 平坦化膜
14A 第1平坦化膜
14B 第2平坦化膜
15 赤色変換膜材料
15A 赤色変換膜
17 保護膜
18A 前面電極
20 有機EL層
21 背面電極
22 電界発光素子
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing an electroluminescent element, and more particularly to a method for manufacturing an electroluminescent element in which an electroluminescence (hereinafter referred to as EL) layer is sandwiched between electrodes.
[0002]
[Prior art]
In recent years, an electroluminescent element using an organic EL material has been developed for an electroluminescent element, and an electroluminescent element 1 having a structure as shown in FIG. 7 is considered. That is, in the electroluminescent element 1, a black matrix 8 is formed on a glass substrate 2 in a lattice pattern, color conversion films 6R and 6G are formed in a predetermined arrangement, and a protective film 9 is formed on the entire surface. The front electrode 3, the organic EL layer 4, and the back electrode 5 are formed on the top.
[0003]
[Problems to be solved by the invention]
In such an electroluminescent device, since the color conversion efficiency of the color conversion film 6R and the color conversion film 6G is different, the film thickness is controlled so as to emit light with uniform luminance. For example, by the incidence of blue light The thickness of the color conversion film 6R that emits red light is set to about 20 μm, and the thickness of the color conversion film 6G that emits red light by the incidence of blue light is set to about 10 μm. There was a difference in thickness between 6R and 6G. Further, since the dot portion of blue display does not have a color conversion film, a step is formed between the display portions of R, G, and B, and step coverage of the organic EL layer 4 is deteriorated. It is feared that the organic EL layer 4 is disconnected at the edge portion and the front electrode 3 and the back electrode 5 are short-circuited.
[0004]
An object of the present invention is to provide a method for manufacturing an electroluminescent element having a structure in which occurrence of a short circuit is small.
[0005]
[Means for Solving the Problems]
According to a first aspect of the present invention, in the method of manufacturing an electroluminescent element having the first color conversion film and the second color conversion film, the step of patterning the first color conversion film at a predetermined position on the transparent substrate; Forming a second color conversion film on the transparent substrate so as to completely cover the first color conversion film and having an opening at a predetermined position so that the upper portion is exposed in the opening; A step of forming a protective film so as to flatten the surface on the insulating film and the second color conversion film, a step of forming a front electrode film on the protective film, and the front electrode film The method includes a step of forming an organic EL layer thereon and a step of forming a back electrode on the organic EL layer .
[0006]
Therefore, in the first aspect of the invention, the insulating film having the opening in the second color conversion film relaxes the step between the first color conversion film and the second color conversion film, so that the step coverage of the front electrode or the like is reduced. Can be improved, and disconnection of these constituent films can be prevented.
[0007]
According to a second aspect of the present invention, in the electroluminescent element manufacturing method according to the first aspect, the first color conversion film and the insulating film are formed of a photosensitive resin material.
[0008]
The invention according to claim 3 is a method for manufacturing an electroluminescent element, comprising: forming a first insulating film having a first opening and a second opening on a transparent substrate ; and the first opening. Forming a first color conversion film so as to be flush with a surface of the first insulating film, and forming a second insulating film having a third opening formed on the second opening. Forming a second color conversion film in the second opening of the first insulating film so as to be flush with the surface of the second insulating film; and on the second insulating film And a step of forming a protective film on the second color conversion film, a step of forming a front electrode film on the protective film, a step of forming an organic EL layer on the front electrode film, and the organic EL And a step of forming a back electrode on the layer .
[0009]
Therefore, in the invention described in claim 3, since the color conversion film material has a low resolution, the processing dimension of the first insulating film using the photolithography method is finer than the processing dimension of the color conversion film material by photosensitivity. By forming the color conversion film in the opening of the first insulating film, the line width of the color conversion film can be finely formed. For this reason, it becomes possible to manufacture an electroluminescent element capable of high-definition display. In addition, the step difference between the first color conversion film and the second color conversion film can be reduced by the first insulating film and the second insulating film, so that the step coverage of the front electrode or the like can be improved.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the details of the method for producing an electroluminescent element according to the present invention will be described based on embodiments shown in the drawings.
[0011]
(Embodiment 1)
The first embodiment will be described with reference to FIGS. First, as shown in FIG. 1A, a black matrix 12 is formed on a glass substrate 11 in a lattice shape. After that, a negative photosensitive material that is excited by emission of blue light of a predetermined wavelength range and emits green light of a predetermined wavelength range is coated, and a development is performed after exposing the portion where the negative photosensitive material is left. Then, as shown in FIG. 1B, a color conversion film (hereinafter referred to as a green conversion film) 13 made of a negative photosensitive material is arranged in an opening 13 of the black matrix 12 in an arrangement corresponding to a predetermined color arrangement. And patterning so as to cover. The green conversion film 13 is formed to have an optimum thickness for emitting green light having good visibility and, for example, about 10 μm.
[0012]
Next, as shown in FIG. 1C, a flattening film 14 is formed on the entire display region by, for example, spin coating so that the green conversion film 13 is completely filled. The material of the planarizing film 14 is a well-known negative synthetic resin material having photosensitivity developed as a spacer material for a liquid crystal display panel, and the light transmittance after film formation is 90% or more. The synthetic resin material for forming the flattening film 14 is a material that can be formed to have a film thickness of about the gap of the liquid crystal display panel, and can be formed to a thickness of about several tens of μm.
[0013]
Thereafter, a synthetic resin, which will be described later, becomes a planarizing film 14 other than a portion where a color conversion film (hereinafter referred to as a red conversion film) 15A that is excited by emitting blue light and emits red light is hereinafter disposed at a predetermined position. After the material is exposed, it is developed to form an opening 14A as shown in FIG.
[0014]
Subsequently, as shown in FIG. 2B, the red conversion film material 15 for forming the red conversion film 15A on the opening 14A and the planarizing film 14 is made visible, including the depth of the opening 14A. The film is formed by spin coating so as to have an optimum thickness for emitting red light with good luminance, for example, a thickness of about 20 μm. Since the red conversion film 15 is made of a non-photosensitive material, patterning is performed by the following method. That is, by using a photolithography technique, patterning is performed so as to leave the resist mask 16 above the material of the red conversion film 15 corresponding to the opening 14A as shown in FIG. Part of the red color conversion film material 15 is removed by wet etching. As a result, as shown in FIG. 2C, a red conversion film 15A slightly protruding (about 2 to 3 μm) from the opening 14A of the planarization film 14 can be formed. The red conversion film 15 </ b> A and the green conversion film 13 are made of a material that can withstand the pre-bake and main-bake temperatures when the resist mask 16 is formed.
[0015]
Next, as shown in FIG. 3A, the entire display region is coated with a protective film 17 made of an acrylic synthetic resin. At this time, since the projecting dimension of the red conversion film 15A is very small, it can be covered with the protective film 17, and the surface of the protective film 17 can be formed flat. Thereafter, a transparent conductive material such as ITO (indium tin oxide) or In 2 O 3 (ZnO) m (where 0 <m <3) (preferably with respect to the organic EL layer 20 described later) is formed on the protective film 17. The front electrode film 18 made of a conductive material having a high hole injection property is formed by vapor deposition or sputtering. Further, a resist mask 19 is patterned on the front electrode film 18 by using a photolithography technique. The resist mask 19 is formed so as to be parallel to each other at positions corresponding to the columns or rows of the openings of the black matrix 12 formed on the glass substrate 11. Then, wet etching or dry etching is performed using the resist mask 19 to form a front electrode 18A as shown in FIG.
[0016]
Thereafter, as shown in FIG. 3C, the organic EL layer 20 is formed over the entire display region, and MgIn or the like is formed on the organic EL layer 20 so as to correspond to the row or column of the front electrode 18A described above. A back electrode 21 such as AlLi is formed by vapor deposition using a metal mask. The organic EL layer 20 is composed of an electron transport layer composed of Aluminum-tris (8-hydroxyquinolinate), 96% by weight of 4,4′-Bis (2,2-diphenylvinylene) biphenyl and 4% in order from the front electrode film 18 side. Light-emitting layer composed of 4,4'-Bis ((2-carbazole) vinylene) biphenyl by weight%, N, N'-di (α-naphthyl) -N, N'-diphenyl-1,1'-biphenyl-4 , 4'-diamine, which consists of three layers of hole transport layer, and emits light in the blue wavelength region when current flows inside. In this way, an electroluminescent element 22 as shown in FIG. 3C can be manufactured.
[0017]
In the manufacturing method of the electroluminescent element of this embodiment, the level difference caused by the color conversion film having a large film thickness difference is relaxed by using the planarizing film 14 or the protective film 17, so that the front electrode 18 </ b> A, the organic EL layer 20, and When the back electrode 21 is formed, these step coverages can be improved to prevent the occurrence of step breaks.
[0018]
Although the present embodiment has been described above, in the present embodiment, the red conversion film 15A and the green conversion film 13 are formed in the openings of the black matrix 12, but predetermined color filters are formed in the respective openings of the black matrix 12. After that, the red conversion film 15A and the green conversion film 13 can be formed on necessary portions. The red, green, and blue color filters emit red and green light emitted from the color conversion film. It is also possible to improve the color purity of the blue light emitted from the organic EL layer 20 without passing through the color conversion film. In the present embodiment described above, the front electrode 18A is formed on the protective film 17. However, in order to improve the reliability of the element, a silicon oxide film or a silicon nitride film is formed on the protective film 17. Of course, the front electrode 18A may be formed later. In Embodiment 1 described above, the light emission color of the organic EL layer 20 is set to blue. However, the present invention is not limited to this, and each color conversion film is appropriately changed according to the light emission color of the organic EL layer 20. It may be a thing. Further, in the present embodiment, the organic EL layer 20 is used as the light emitting layer, but an inorganic EL layer may be used.
[0019]
(Embodiment 2)
Embodiment 2 of the manufacturing method of the electroluminescent element which concerns on this invention is demonstrated using Fig.4 (a)-FIG.6 (b). First, as shown in FIG. 4A, a black matrix 12 is formed on a glass substrate 11 in a lattice shape. After that, a negative photosensitive resin is formed by controlling the film thickness by spin coating, and then the portion of the opening of the black matrix 12 where no color conversion film is arranged according to the set color arrangement (blue light emitting portion) Only this is exposed to cure the resin in this portion, and as shown in FIG. 4B, the first planarizing film 14A is patterned. Here, the first planarization film 14 </ b> A does not need to cover the opening edge of the black matrix 12 facing the opening in which the color conversion film is arranged among the openings of the black matrix 12.
[0020]
Thereafter, a negative photosensitive green conversion film material is applied, and as shown in FIG. 4C, the green conversion film in the opening of the first planarization film 14A corresponding to the portion set as the green light emitting portion in advance. After the material is exposed and cured, the green conversion film 13 is formed by etching back so as to be flush with the surface of the first planarization film 14A. At this time, the pattern width W of the green conversion film 13 is determined by the photolithography accuracy of the first planarization film 14A. Further, the green conversion film 13 in the opening of the first planarizing film 14A corresponding to the portion set in advance as the red light emitting portion is removed by etching.
[0021]
Next, as shown in FIG. 5A, the second flattening film 14B is formed on the entire display area except for the opening of the first flattening film 14A corresponding to the portion previously set as the red light emitting portion. . Note that the depth of the recess formed by the first planarizing film 14A and the second planarizing film 14B is set to about 20 μm. Thereafter, the surface of the second planarizing film 14B is exposed by spin coating the red conversion film material 15 on the entire surface and performing etch back. At this time, the red conversion film 15A is formed only in the recess formed by the first planarization film 14A, the second planarization film 14B, and the opening of the black matrix 12, and the surface of the red conversion film 15A and the second The surface of the planarizing film 14B is flush with the surface.
[0022]
Next, after forming the protective film 17 as shown in FIG. 6A, as shown in FIG. 6B, the front electrode 18A, the organic EL layer 20, and the back electrode 21 are formed as in the first embodiment. Thus, the manufacture of the electroluminescent element 22 is completed.
[0023]
In the present embodiment, the width of the green conversion film 13 is determined by the width K of the opening formed in the first planarization film 14A, and the width of the red conversion film 15A is also the same as that of the first planarization film 14A and the second planarization film. Since it is determined by the width of the opening formed in the film 14B, the color conversion film can be formed with the accuracy of photolithography of the planarization film. Incidentally, when patterning a color conversion film, the color conversion film material containing a large amount of fluorescent material has low transmittance and low resolution, and therefore, when it is exposed and patterned, its dimensional accuracy is the same as that of a normal photolithographic photomask. Although it is about 100 μm larger than the minimum dimension used, as described above, in this embodiment, the first and second planarization films formed of a material having high transmittance and high resolution are miniaturized to the minimum dimension. Can be made possible. For this reason, it is possible to achieve high definition in the display of the electroluminescent element. Further, since the upper surface of the red conversion film 15A can be flush with the surface of the second planarization film 14B, the thickness of the protective film 17 formed thereon can be set thin, and the organic EL layer The distance between the 20 light emitting portions and the color conversion film can be shortened. For this reason, the influence of parallax can be reduced significantly.
[0024]
Although the second embodiment has been described above, the present invention is not limited to this, and various modifications accompanying the gist of the configuration are possible. For example, in the present embodiment, the front electrode 18A is provided on the protective film 17, but the front electrode 18A may be formed via a silicon oxide film or a silicon nitride film as in the first embodiment. Further, as described in the first embodiment, the color filter may be arranged on the glass substrate 11. In the second embodiment, the emission color of the organic EL layer 20 is set to blue as in the first embodiment. However, the present invention is not limited to this, and each color conversion is performed according to the emission color of the organic EL layer 20. The film is also changed as appropriate. Furthermore, in this embodiment, the organic EL layer 20 is used as the light emitting layer, but an inorganic EL layer may be used.
[0029]
【The invention's effect】
As is apparent from the above description, according to the present invention, an electroluminescent device having a flat structure in which each constituent layer is not stepped can be manufactured.
[Brief description of the drawings]
FIGS. 1A to 1C are process cross-sectional views illustrating Embodiment 1 of a method for manufacturing an electroluminescent element according to the present invention. FIGS.
FIGS. 2A to 2C are process cross-sectional views illustrating Embodiment 1. FIGS.
3A to 3C are process cross-sectional views illustrating Embodiment 1. FIG.
4A to 4C are process cross-sectional views illustrating Embodiment 2 of the method for manufacturing an electroluminescent element according to the present invention.
5A to 5C are process cross-sectional views illustrating Embodiment 2. FIG.
FIGS. 6A and 6B are process cross-sectional views illustrating Embodiment 2. FIGS.
FIG. 7 is a cross-sectional view of a conventional electroluminescent element that performs multicolor display.
[Explanation of symbols]
11 glass substrate 13 green conversion film 14 flattening film 14A first flattening film 14B second flattening film 15 red conversion film material 15A red conversion film 17 protective film 18A front electrode 20 organic EL layer 21 back electrode 22 electroluminescent element

Claims (4)

第1色変換膜及び第2色変換膜を有する電界発光素子の製造方法において、
透明基板上の所定位置に、第1色変換膜をパターン形成する工程と、
前記透明基板上に、前記第1色変換膜を完全に覆うとともに所定の箇所に開口部を有する絶縁膜を形成する工程と、
前記開口部に、上部が露出するように第2色変換膜を形成する工程と、
前記絶縁膜上及び前記第2色変換膜上に表面を平坦にするように保護膜を形成する工程と、
前記保護膜上に前面電極膜を形成する工程と、
前記前面電極膜上に有機EL層を成膜する工程と、
前記有機EL層上に背面電極を形成する工程と、
を備えることを特徴とする電界発光素子の製造方法。
In a method for manufacturing an electroluminescent element having a first color conversion film and a second color conversion film,
Patterning the first color conversion film at a predetermined position on the transparent substrate;
On the transparent substrate, a step of completely covering the first color conversion film and forming an insulating film having an opening at a predetermined position;
Forming a second color conversion film in the opening so that an upper portion is exposed;
Forming a protective film on the insulating film and the second color conversion film so as to flatten the surface ;
Forming a front electrode film on the protective film;
Forming an organic EL layer on the front electrode film;
Forming a back electrode on the organic EL layer;
A method for manufacturing an electroluminescent element, comprising:
前記第1色変換膜及び前記絶縁膜は感光性樹脂材料から形成されることを特徴とする請求項1記載の電界発光素子の製造方法。  The method of manufacturing an electroluminescent element according to claim 1, wherein the first color conversion film and the insulating film are formed of a photosensitive resin material. 透明基板に、第1開口部及び第2開口部を有する第1絶縁膜を形成する工程と、
前記第1開口部に前記第1絶縁膜の表面と面一になるように第1色変換膜を形成する工程と、
前記第2開口部上に、第3開口部が形成された第2絶縁膜を形成する工程と、
前記第1絶縁膜の前記第2開口部に、前記第2絶縁膜の表面と面一になるように第2色変換膜を形成するように形成する工程と、
前記第2絶縁膜上及び前記第2色変換膜上に保護膜を形成する工程と、
前記保護膜上に前面電極膜を形成する工程と、
前記前面電極膜上に有機EL層を成膜する工程と、
前記有機EL層上に背面電極を形成する工程と、
を備えることを特徴とする電界発光素子の製造方法。
Forming a first insulating film having a first opening and a second opening on a transparent substrate ;
Forming a first color conversion film in the first opening so as to be flush with the surface of the first insulating film ;
Forming a second insulating film having a third opening formed on the second opening;
Forming a second color conversion film in the second opening of the first insulating film so as to be flush with the surface of the second insulating film ;
Forming a protective film on the second insulating film and the second color conversion film;
Forming a front electrode film on the protective film;
Forming an organic EL layer on the front electrode film;
Forming a back electrode on the organic EL layer;
A method for manufacturing an electroluminescent element, comprising:
前記第1色変換膜及び前記第1絶縁膜は感光性樹脂材料から形成されることを特徴とする請求項3記載の電界発光素子の製造方法。  4. The method of manufacturing an electroluminescent element according to claim 3, wherein the first color conversion film and the first insulating film are formed of a photosensitive resin material.
JP12272698A 1998-04-17 1998-04-17 Method for manufacturing electroluminescent element Expired - Lifetime JP4096403B2 (en)

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