JP4101554B2 - Sputtering apparatus and method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an apparatus and a method for forming a film on a workpiece by sputtering.
[0002]
[Prior art]
Sputtering is a kind of physical vapor deposition, and in a vacuum vessel, while introducing an inert gas such as Ar, a glow discharge is generated using an electrode with a coating material (target) as a cathode, In this method, the generated ions are made to collide with the cathode with energy of several hundreds of eV corresponding to the discharge voltage, and particles released by reaction are deposited on the substrate to form a film.
This film formation process can generate a stronger glow discharge by magnetron sputtering with a magnetic field applied to the target surface, and is used as a practical film formation process.
[0003]
A problem often pointed out in the sputtering method is that the formed film is not sufficiently dense because the energy of particles deposited on the substrate is small.
As a method for solving this problem, various method formulas have been proposed. As one of the methods, a technique for generating a pulse at a very high power density in a pulse to form a film is formed. Has been proposed.
Prior art 1 (Reference 1, Gruen, USP5015493, Process and Apparatus for coating conducting pieces using a pulsed glow discharge)
In the above-mentioned document, Gruen proposed a method and apparatus for intermittently performing glow discharge for sputtering for the purpose of suppressing the temperature rise of the vacuum vessel and the substrate that occurs when sputtering film formation is performed by glow discharge by sputtering. ing. That is, according to Gruen, a square-wave DC pulse is set to a frequency of 0.1 to 100 kHz, an ON width of the pulse: an OFF width of 1: 1 to 1: 1000.
The voltage of each pulse is 100V or more, preferably 200-800V
The width of each pulse is 10-10,000 μsec
It is said that the intended purpose can be achieved by applying the voltage at the point. further,
A square-wave DC pulse is
Current density is 0.1 mA / cm ^{2 to} 1 A / cm ²
Power density is 1-900W / cm ²
Is preferred.
[0004]
Prior Art 2 (Reference 2, Kouznetsov, WO 98/40532, A method and apparatus for magnetically enhanced sputtering: and Reference 3, Kouznetsov et al., “A novel pulsed magnetron sputter technique utilizing very high target power values”, Surface and Coatings Technology 122 (1999) 290-293)
As another technique, Kouznentsov et al. Have proposed a magnetron sputtering method in which the peak power density reaches 2.8 kW / cm ² .
According to Reference 2, Kouznentsov is
In magnetron sputtering, by sharpening the rising edge of a pulse that applies a negative voltage to the target, the gas in front of the target is brought into a fully ionized state very rapidly to form a substantially uniform plasma, It has been proposed to apply a pulse that promptly passes through the first glow discharge state and the arc discharge state.
Power during pulse 0.1kW-1MW
Pulse width 50 μs to 1 ms, more preferably 50-200 μs, preferably 100 μs
Pulse interval 10 ms to 1000 S, preferably 10 to 50 ms
Pulse voltage 0.5-5kV
Is disclosed as a preferred condition.
[0005]
Similarly, according to Reference 3 by Kouznetsov, a peak power of 100 to 500 kW (equivalent to a target power density of 0.6 kW to 2.8 kW / cm ² ), an Ar pressure of 0.06 to 5 Pa, a pulse width of 50 to 100 μs, and a repetition of 50 Hz. The results of film formation experiments conducted at a frequency have been reported. The result shows that a high ion current amount of 1 A / cm ² and about 70% of the evaporated target vapor are ionized on the substrate to be formed. Has been obtained. It can be expected that the vapor used for film formation is ionized at a high rate, whereby high adhesion between the film and the substrate can be obtained, or a dense film can be formed.
[0006]
[Problems to be solved by the invention]
However, since a sputtering apparatus having a pulse generation mechanism uses a power supply having a pulse generation mechanism in addition to a DC voltage generation mechanism, the power supply becomes expensive and causes a problem in terms of economy, and in particular, has a plurality of sputter evaporation sources. There is a problem that the apparatus is expensive.
An object of the present invention is to provide a sputtering apparatus having an economical configuration even in an apparatus having a plurality of sputtering evaporation sources.
[0007]
Another object of the present invention is to stabilize the discharge even when the area of the discharge anode is not sufficient.
[0008]
[Means for Solving the Problems]
In order to solve the problem, the technical means employed in the present invention is characterized in that, in a sputtering apparatus including a power supply device that supplies power to a plurality of sputtering evaporation sources, the power supply device is smaller in number than the number of sputtering evaporation sources. a DC voltage generation mechanism, in that it includes a pulse distribution supply means connected to the cathode side of the DC voltage generator mechanism. Further, the pulse distribution supply means includes a power storage unit provided for storing the power from the DC voltage generation mechanism for each sputter evaporation source, and each of the power stored in each power storage unit in the form of pulses. And a pulse generator for supplying pulsed power to the sputter evaporation source.
[0009]
According to such means, more sputter evaporation sources are pulse-driven with a smaller number of DC voltage generating mechanisms than the sputter evaporation sources, and the pulse power supply required for the number of evaporation sources is unnecessary, which is economical. Device configuration is possible .
Furthermore, it is preferable that the power storage unit is a capacitor, and the pulse generation unit is configured by a switch element and an inductance element.
Furthermore, if a power control mechanism for controlling and adjusting the storage power of each power storage unit is provided between each power storage unit and the DC voltage generation mechanism, the pulse discharge power for each evaporation source Can be adjusted.
[0010]
In addition, a switching element is provided for switching and connecting the sputter evaporation source in the OFF period to the anode of the DC voltage generation mechanism in the pulse OFF period in which no pulsed power is supplied to any one of the sputter evaporation sources. Is preferred.
That is, in the method of supplying power from a power source to a plurality of sputter evaporation sources and forming a film on the object to be processed by the sputtering method, the OFF period is the OFF period in which power is not supplied to any of the sputter evaporation sources. The sputter evaporation source is connected to the anode of the power source and used as an anode for discharge generated between the sputter evaporation source to which power is supplied, so that the evaporation source can be used even if the anode area is insufficient. Stable discharge can be performed as an anode.
[0011]
From another point of view, when the pulsed power is supplied to one of the plurality of sputter evaporation sources, the at least one other sputter evaporation source is connected to the DC voltage generating mechanism. It is assumed that a switch element for switching connection to the anode is provided.
That is, when power is supplied to one of the plurality of sputter evaporation sources in the method of forming a film on the object to be processed by the sputtering method by supplying power to the plurality of sputter evaporation sources from the power source. In addition, by connecting at least one other sputtering evaporation source to the anode of the power source and using it as an anode for discharge generated between the sputtering evaporation source to which power is supplied, the area of the anode is insufficient. However, stable discharge can be performed with the evaporation source serving as the anode.
[0012]
Another feature of the technical means employed in the present invention is a sputtering apparatus including a power supply device that supplies power to a plurality of sputtering evaporation sources, wherein the power supply device includes one DC voltage generating mechanism and the DC voltage. and a single power storage unit for storing power from the generating mechanism, time division pulsed sequentially distributing supplies a plurality of pulse distribution supply means is provided with electric power stored in the power storage unit for each sputter evaporation sources The pulse distribution supply means is connected to the cathode side of the DC voltage generating mechanism .
According to such means, a plurality of sputter evaporation sources are pulse-driven by a single DC voltage generating mechanism, so that the pulse power source required for the number of sputter evaporation sources becomes unnecessary, and a plurality of sputter evaporation sources are required. Even in a device having a power source, it is possible to execute the pulse sputtering method by one DC voltage generation mechanism, and only one power storage unit for storing the power from the DC voltage generation mechanism is required, which is an economical device configuration. Is possible.
[0013]
Further, it is preferable that the power storage unit is a capacitor, and the pulse distribution supply unit is configured by a switch element and an inductance element.
Another feature of the technical means employed in the present invention is a sputtering apparatus including a power supply device that supplies power to a plurality of sputtering evaporation sources, wherein the power supply device includes one DC voltage generating mechanism and the DC voltage. And a power storage unit that stores power from the generation mechanism, and by controlling the charging voltage to the power storage unit, the power supplied from the power storage unit to each sputter evaporation source in a time-division pulse form is sputtered. The point which is equipped with the control means which can be set for every evaporation source exists.
[0014]
According to such means, a plurality of sputter evaporation sources are pulse-driven by a single DC voltage generating mechanism, so that the pulse power source required for the number of sputter evaporation sources becomes unnecessary, and a plurality of sputter evaporation sources are required. Even in a device having a power source, it is possible to execute the pulse sputtering method by one DC voltage generation mechanism, and only one power storage unit for storing the power from the DC voltage generation mechanism is required, which is an economical device configuration. Is possible.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a block chart of a sputtering apparatus 1 having a plurality of sputtering evaporation sources and a power supply apparatus 2 thereof. The sputtering apparatus 1 includes a vacuum chamber 3 that performs a film forming process on an object to be processed, and a plurality of sputter evaporation sources (sputter cathodes) 4 installed in the vacuum chamber 3. In the example of FIG. 1, four sputter evaporation sources 4 are installed. In addition, the sputtering apparatus 1 is provided with other mechanisms necessary for sputtering film formation, such as an evacuation system and a process gas introduction mechanism, but these are well-known and are omitted in FIG.
[0016]
The power supply device 2 is for supplying electric power to the sputter evaporation source 4 which is an electrode to which a coating material (target) is attached, and generating discharge using the sputter evaporation source as a cathode.
This power supply device 2 has one DC voltage generating mechanism (DC power supply) 6 and pulse distribution for supplying power from the DC voltage generating mechanism 5 to each of the sputter evaporation sources 4, 4, 4 and 4 in a pulsed manner. Supply means 7, 7, 7, 7 are provided. The cathode (−) side of the DC voltage generating mechanism 6 is connected to the pulse distribution supply means 7, 7, 7, 7, and the anode (+) side of the DC voltage generating mechanism 6 is connected to the vacuum chamber 3. 3 serves as an anode of discharge generated between the evaporation source 4 and the evaporation source 4. Further, the anode (+) side of the power supply device 2 is grounded. The number of DC voltage generating mechanisms 6 should be less than the number of sputter evaporation sources 4. For example, two DC voltage generating mechanisms are provided for four sputter evaporation sources 4, and the power of one DC voltage generating mechanism is provided. May be distributed to two sputter evaporation sources, and the power of the other DC voltage generation mechanism may be distributed to the other two sputter evaporation sources.
[0017]
The pulse distribution supply means 7, 7, 7, 7 are provided for each of the sputter evaporation sources 4, 4, 4, 4 and the power storage unit 9 provided for each of the sputter evaporation sources 4, 4, 4, 4. The pulse generator 10 is provided.
The power storage unit 9 is for storing the power from the DC voltage generating mechanism 6 for each sputter evaporation source 4 and is composed of a capacitor here. One end of each capacitor 9 is connected to the DC voltage generating mechanism 6 through a diode 12 and a resistor 13, and the other end is grounded.
[0018]
The pulse generator 10 pulsates the power stored in each power storage unit 9 and supplies the pulsed power to each sputter evaporation source 4. Here, the pulse generator 10 is provided between the capacitor 6 and the sputter evaporation source 4. It consists of an intervening switch element 15 and an inductance element (reactor) 16. As the switch element 15, an element such as a thyristor, MOSFET, or IGBY can be used.
In the circuit constituting the pulse distribution supply means 7, a DC voltage is always stored in the capacitor 9 installed for each evaporation source 4. When the switch element 15 is turned on in this state, the voltage stored in the capacitor 9 is applied to the sputter evaporation source 4 so that the target can be obtained if the inside of the vacuum chamber is maintained at a gas pressure suitable for sputtering. Glow discharge occurs and sputter film formation occurs.
[0019]
During the glow discharge that occurs at this time, the voltage is determined by the material and structure of the target and is in the range of 100 V to 1000 V, and the current is determined by the capacity of the capacitor 9, the charging voltage, the value of the reactor 16, and the discharging voltage. From the start, the current rises and flows with a waveform similar to the half wavelength of the sine wave and stops. This discharge time is determined by the capacitance of the capacitor 9 and the inductance of the reactor 16. For example, when the target material is Al of φ150 mm under the condition of an inductance of 10 μF capacitor 20 μH and a charging voltage of 1000 V, the glow discharge voltage is about 200 V, the peak value of the sinusoidal flowing current is 700 A, and the pulse width Was about 50 μs.
[0020]
In the circuit of FIG. 1, since the circuits 9, 15, and 16 constituting the pulse distribution supply means 7 are prepared for each sputter evaporation source 4, a necessary signal is sent from the pulse timing control unit (not shown) to the switch element 15. A pulsed glow discharge can be generated at the timing (alternately or simultaneously), and by repeating this, it is possible to form a film with four sputter evaporation sources 4 using one DC voltage power source 6. Thus, according to the above-described embodiment, even in an apparatus having a plurality of sputter evaporation sources, the pulse sputtering method is executed with a smaller number of power supplies (specifically, one power supply 6) than the sputter evaporation sources. Therefore, an economical apparatus configuration is possible.
[0021]
Further, according to the characteristics of each of the sputter evaporation sources 4 installed in plurality, the capacitance of the capacitor 9 and the inductance of the reactor 16 of each circuit are set to preferable values, and the pulse current and pulse supplied to each sputter evaporation source are set. The time width can be set optimally, and the capacity of the capacitor 9 and the reactor 16 can be configured to be variable.
Furthermore, in the above example, the pulse width is controlled by the combination of the capacitor 9 and the reactor 16 of the circuit of each evaporation source 4, but a method of cutting the circuit with a predetermined pulse width by the switch element 15 is also possible.
[0022]
Alternatively, as another embodiment, it is also possible to control the pulse current value and the pulse width itself supplied to each evaporation source 4 by providing the switch element 15 with a current control function.
However, the method of giving the current control function to the switch element 15 as described above may involve control difficulties when the pulse width is short, for example, to the μs level when the pulse current value is large.
2 and 3 are embodiments for dealing with such a problem, and the difference from the embodiment of FIG. 1 is that between the DC power supply 6 and the capacitor 9 installed for each sputter evaporation source 4. In addition, a power control mechanism (voltage control mechanism) 18 for controlling and adjusting the charging voltage of the capacitor 9 is provided. 2 and 3, the same reference numerals as those in FIG. 1 have the same functions as those in FIG.
[0023]
The power control mechanism 18 detects the charging voltage of the capacitor 9 and feeds back the detected charging voltage to the current adjusting unit 19 for the capacitor 9 to control the charging voltage of the capacitor 9. For example, as shown in FIG. 3, the circuit 7 includes a switch element 19 such as a transistor, MOSFET, IGBT, or the like as a current adjustment unit 19, and detects a charging voltage of the capacitor 9 to set a predetermined reference charging voltage (setting) And a comparator 20 for controlling the switch element 19 in comparison with the value).
[0024]
By providing this power control mechanism 18, the charging voltage of the capacitor 9 after discharging by pulse discharge can be set for each sputter evaporation source 4, and the peak current of the pulse when pulse discharge is performed, per pulse The input current can be controlled.
FIG. 4 shows still another embodiment. The difference between the embodiment of FIG. 4 and the embodiment of FIGS. 1 to 3 is that a switch element 22 for short-circuiting the sputter evaporation source 4 and the anode of the DC power source is attached to each sputter evaporation source 4. . The switch element 22 is in an OFF (open) state while pulse discharge power is being supplied to each sputter evaporation source 4 (pulse ON period), but is ON (in a pulse OFF period) during pulse discharge (pulse OFF period). The sputter evaporation source 4 can be connected to the anode of the DC power source 2. In this way, when another sputter evaporation source 4 is pulsed while a sputter evaporation source 3 is connected to the anode, the sputter evaporation source 4 connected to the anode is glow-discharged in the same manner as the vacuum chamber 3. It is effective when the discharge is not stable because the anode area is insufficient.
[0025]
In particular, when an insulating oxide film is formed by sputtering in an oxygen atmosphere using aluminum as a target, for example, a normal anode such as the vacuum chamber 3 is covered with the insulating film and does not function effectively as an anode. Therefore, the stability of the discharge can be improved by using as the anode the target whose conductive surface is always exposed by sputtering evaporation.
The ON / OFF control of each switch element 22 is performed by a control unit (not shown) at a timing corresponding to the pulse timing given to each sputter evaporation source 4.
[0026]
FIG. 5 shows another embodiment. In this example, four sputter evaporation sources 4 are installed in the vacuum chamber 3 in which the film forming process is performed. In addition to this, mechanisms necessary for sputtering film formation, such as an evacuation system and process gas introduction, are well known, and are not shown in the figure.
As a power supply system of this apparatus, one DC voltage generating mechanism (sputtering DC power supply) 6, one power storage capacitor (power storage unit) 29, and an inductance element installed for each sputter evaporation source 4 ( Reactor) 36 and a pulse generator 30 constituted by a switch element 35. As the switch element 35, an element such as a thyristor, a transistor, a thyratron, a MOSFET, or an IGBT can be used.
[0027]
A pulse distribution supply means 27 that sequentially distributes the electric power stored in the power storage unit 29 to each of the sputter evaporation sources 4 in the form of pulses is constituted by a pulse generation unit 30, that is, an inductance element 36 and a switch element 35. Four pulse distribution supply means 27 are provided corresponding to each sputter evaporation source 4, and the negative voltage side power from the DC voltage generating mechanism 6 is supplied to each sputter evaporation source 4 by these pulse distribution supply means 27. It is distributed and supplied in divided pulses.
In this circuit, the capacitor 29 always stores a DC voltage from the DC voltage generating mechanism 6. In this state, when the switch element 35 corresponding to a certain sputter evaporation source 4 is turned on, the voltage stored in the capacitor 29 is applied to the sputter evaporation source 4 and the gas pressure suitable for sputtering in the vacuum chamber 3 or the like. If this state is maintained, glow discharge is generated at the target and sputter film formation occurs. During the glow discharge that occurs at this time, the voltage depends on the material and structure of the target, and the voltage is in the range of 100 V to 1000 V. The current is determined by the capacity of the capacitor 29, the charging voltage, the value of the reactor 36, and the discharging voltage. Therefore, the current rises and flows with a waveform similar to the half wavelength of the sine wave and stops. This discharge time is determined by the capacitance of the capacitor 29 and the inductance of the reactor 36. For example, if the target material is Al of φ150 mm under the conditions of a 10 μF capacitor, 20 μH inductance, and 1000 V charging voltage, the glow discharge voltage is about 200 V, the sine wave flowing current peak value is 700 A, and the pulse width Was about 50 μs.
[0028]
In the above circuit, since the switch element 35 is prepared for each sputter evaporation source 4, it is possible to supply pulsed power to each sputter evaporation source 4 alternately in a time-division manner sequentially by a signal from a control mechanism (not shown). By repeating this, film formation can be performed by four sputter evaporation sources 4 using one DC voltage generating mechanism 6 and one power storage unit 29.
Thus, according to the above-described embodiment, a plurality of sputter evaporation sources 4 are pulse-driven by a single DC power supply 6, and the pulse power supply required for the number of sputter evaporation sources 4 is no longer necessary. Even in an apparatus having a plurality of sputter evaporation sources 4, the pulse sputtering method can be executed by one DC voltage generating mechanism 6, and an economical apparatus configuration is possible.
[0029]
Naturally, the inductance of each pulse generator 30 and reactor 36 is set to a preferable value in accordance with the characteristics of each sputter evaporation source 4 installed in a plurality of units, and the pulse current and pulse supplied to each sputter evaporation source 4 are set. The time width can be set optimally, and the inductance of the reactor 36 can be configured to be variable.
Further, in the above example, the pulse width of the pulse voltage supplied to each sputter evaporation source 4 is controlled by the inductance of the reactor 36 of the pulse generator 30 of each sputter evaporation source 4, but it is controlled by the switch element 35 in the circuit. A method of cutting the circuit with a predetermined pulse width is also possible.
[0030]
Alternatively, in another embodiment, it is possible to control the pulse current value and the pulse width itself supplied to each sputter evaporation source 4 by providing the switch element 35 with a current control function.
However, the method of giving the current control function to the switch element 35 as described above may involve control difficulties when the pulse width is short, for example, to the μs level when the pulse current value is large.
FIG. 6 shows an embodiment that addresses such a problem. The difference from the embodiment of FIG. 5 is that a control mechanism 38 for controlling and adjusting the charging voltage of the capacitor 29 is added between the DC voltage generating mechanism 6 and the capacitor 29. . The control mechanism 38 includes, for example, a switching element (current adjusting unit) 39 such as a transistor, MOSEFT, or IGBT, and a comparator 40 that detects the charging voltage of the capacitor 29 and compares it with a predetermined charging voltage to control the switching element 39. Yes.
[0031]
In the case of this embodiment, it is possible to set the charging voltage of the capacitor 29 for each sputter evaporation source 4 by determining the order of the sputter evaporation source 4 that performs pulse discharge in a time division in advance. When this is done, the peak current of the pulse and the input power per pulse can be set for each sputter evaporation source 4.
FIG. 7 shows another embodiment. The difference between this embodiment and the embodiment of FIG. 5 or the embodiment of FIG. 6 is that the sputter evaporation source 4 and the anode (+) of the DC voltage generating mechanism 6 are short-circuited for each sputter evaporation source 4. The switch element (switch means) 42 for attaching is attached. The switch element 42 is in an OFF (open) state while the pulse discharge power is supplied to each sputter evaporation source 4, but is turned on (closed) during the pulse discharge, and the sputter evaporation source 4 is turned off. It can be connected to the anode (−) of the DC voltage generating mechanism 6.
[0032]
As described above, when another sputter evaporation source 4 is pulsed while one sputter evaporation source 4 is connected to the anode, the sputter evaporation source 4 connected to the anode is glow-discharged in the same manner as the vacuum chamber 3. It is effective when the discharge is not stable because the anode area is insufficient. In particular, when an insulating oxide film is formed by sputtering in an oxygen atmosphere using aluminum as a target, for example, a normal anode such as the vacuum chamber 3 is covered with the insulating film and does not function effectively as an anode. Therefore, the stability of the discharge can be remarkably improved by using the target whose conductive surface is always exposed in the sputter evaporation source 4 as the anode.
[0033]
【The invention's effect】
When power from a DC voltage generating mechanism having a number smaller than the number of sputter evaporation sources is distributed and supplied to a plurality of sputter evaporation sources in a pulsed manner, a sputter apparatus having an economical configuration is obtained.
In addition, when some of the sputter evaporation sources are used as the discharge anode, the discharge stability can be ensured even if the anode area is insufficient.
[Brief description of the drawings]
FIG. 1 is a block chart of a sputtering apparatus according to a first embodiment.
FIG. 2 is a block chart of a sputtering apparatus according to a second embodiment.
FIG. 3 is a detailed circuit diagram of the power control mechanism of FIG. 2;
FIG. 4 is a block chart of a sputtering apparatus according to a third embodiment.
FIG. 5 is a block chart of a sputtering apparatus according to a fourth embodiment.
FIG. 6 is a block chart of a sputtering apparatus according to a fifth embodiment.
FIG. 7 is a block chart of a sputtering apparatus according to a sixth embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Sputtering device 2 Power supply device 3 Vacuum chamber 4 Sputter evaporation source 6 DC voltage generation mechanism (DC power supply)
7 Pulse distribution supply means 9 Power storage (capacitor)
DESCRIPTION OF SYMBOLS 10 Pulse generation part 15 Switch element 16 Inductance element 18 Power control mechanism 22 Switch element 29 Electric power storage part (capacitor)
30 Pulse generator 35 Switch element 36 Inductance element (reactor)
38 Control mechanism 42 Switch means (switch element)

Claims (14)

In a sputtering apparatus provided with a power supply device (2) for supplying power to a plurality of sputtering evaporation sources (4),
The power supply unit (2) is connected to the cathode side of the DC voltage generating mechanism (6), which is smaller in number than the number of the sputter evaporation sources (4), and connected to the cathode side of the DC voltage generating mechanism (6). 4) pulse distribution supply means (7) connected to each other,
Each pulse distribution supply means (7) includes a power storage unit (9) provided to store power from the DC voltage generation mechanism (6) for each sputter evaporation source (4), and each power storage unit. A sputtering apparatus comprising: a pulse generation unit (10) configured to pulse the power stored in (9) and supply the pulsed power to each sputtering evaporation source (4) . The sputtering apparatus according to claim 1, wherein the power storage unit (9) is a capacitor, and the pulse generation unit (10) includes a switch element (15) and an inductance element (16). . A power control mechanism (18) for controlling and adjusting the stored power of each power storage section (9) is provided between each power storage section (9) and the DC voltage generation mechanism (6). The sputtering apparatus according to claim 1, wherein: Switch for switching and connecting the sputter evaporation source (4) in the OFF period to the anode of the DC voltage generating mechanism (6) in a pulse OFF period in which no pulsed power is supplied to any one of the sputter evaporation sources (4) The sputtering apparatus according to claim 1, wherein an element (22) is provided . When pulsed power is supplied to one of the plurality of sputter evaporation sources (4), at least one other sputter evaporation source (4) is connected to the DC voltage generating mechanism (6). A sputtering device according to any one of claims 1 to 3, further comprising a switch element (22) for switching connection to the anode of ( 1 ). In a method of forming a film on an object to be processed by sputtering by supplying power from a power source to a plurality of sputtering evaporation sources (4),
It is assumed that a DC voltage is output from the power source, the power from the power source is stored for each sputter evaporation source (4), and the stored power is pulsed to each sputter evaporation source (4). In the OFF period in which power is not supplied to any one of the sputter evaporation sources (4), power is supplied by connecting the sputter evaporation source (4) in the OFF period to the anode of the power source. A sputtering method characterized by being used as an anode for a discharge generated between the sputtering evaporation source (4). In a method of forming a film on an object to be processed by sputtering by supplying power from a power source to a plurality of sputtering evaporation sources (4),
It is assumed that a DC voltage is output from the power source, the power from the power source is stored for each sputter evaporation source (4), and the stored power is pulsed to each sputter evaporation source (4). When power is supplied to one sputter evaporation source (4) of the plurality of sputter evaporation sources (4), at least one other sputter evaporation source (4) is connected to the anode of the power source. A sputtering method characterized by being used as an anode for a discharge generated between the power source and a sputter evaporation source (4) to which electric power is supplied . In a sputtering apparatus provided with a power supply device (2) for supplying power to a plurality of sputtering evaporation sources (4),
The power supply device (2) includes one DC voltage generation mechanism (6) and one power storage unit (29) that stores power from the DC voltage generation mechanism (6). A plurality of pulse distribution supply means (27) for sequentially distributing the power stored in (29) for each sputter evaporation source (4) in a time-division pulse form is provided, and each of the pulse distribution supply means (27) the features and be away sputtering device that is connected to the cathode side of the DC voltage generating mechanism (6). The power storage unit (29) is a capacitor, and the pulse distribution supply unit The sputtering apparatus according to claim 8, wherein the stage (27) is composed of a switch element (35) and an inductance element (36). The power supply device (2) is configured to control the charging voltage to the power storage unit (29) so that the power supplied from the power storage unit (29) to each sputter evaporation source (4) in a pulsed manner is supplied to each sputter evaporation source ( The sputter apparatus according to claim 8 or 9, further comprising control means (38) that can be set every 4) . Switch for switching and connecting the sputter evaporation source (4) in the OFF period to the anode of the DC voltage generating mechanism (6) in a pulse OFF period in which no pulsed power is supplied to any one of the sputter evaporation sources (4) 11. The sputtering apparatus according to claim 8, further comprising an element (42) . When pulsed power is supplied to one of the plurality of sputter evaporation sources (4), at least one other sputter evaporation source (4) is connected to the DC voltage generating mechanism (6). A sputtering device according to any one of claims 8 to 10 , wherein a switching element (42) for switching connection to the anode is provided . In a method of forming a film on an object to be processed by a sputtering method by supplying electric power from a single power source to a plurality of sputtering evaporation sources (4),
  It is assumed that a DC voltage is output from the power source, the power from the power source is stored in one power storage unit (29), and the power stored in the power storage unit (29) is stored in each sputter evaporation source (4). When sequentially distributing and supplying time-divided pulses every time, the sputter evaporation source (4) in the OFF period is connected to the anode of the power source, and the sputter evaporation source (4) to which power is supplied is connected. A sputtering method characterized by being used as an anode for discharge generated between the two. In a method of forming a film on an object to be processed by sputtering by supplying power to a plurality of sputtering evaporation sources (4) from one power source,
It is assumed that a DC voltage is output from the power source, the power from the power source is stored in one power storage unit (29), and the power stored in the power storage unit (29) is stored in each sputter evaporation source (4). At the time of sequentially distributing and supplying time-divided pulses every time, when power is supplied to one of the plurality of sputter evaporation sources (4), at least one other sputter evaporation source (4) Sputtering method characterized by being connected to the anode of the power source and used as an anode for discharge generated between the sputtering evaporation source (4) to which power is supplied.

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