JP4104995B2 - Built-in resistor for multilayer boards - Google Patents
Built-in resistor for multilayer boards Download PDFInfo
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- JP4104995B2 JP4104995B2 JP2003011790A JP2003011790A JP4104995B2 JP 4104995 B2 JP4104995 B2 JP 4104995B2 JP 2003011790 A JP2003011790 A JP 2003011790A JP 2003011790 A JP2003011790 A JP 2003011790A JP 4104995 B2 JP4104995 B2 JP 4104995B2
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- resistor
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- 238000007747 plating Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000005389 magnetism Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000993059 Homo sapiens Hereditary hemochromatosis protein Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 but Co Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- NCEXYHBECQHGNR-UHFFFAOYSA-N chembl421 Chemical compound C1=C(O)C(C(=O)O)=CC(N=NC=2C=CC(=CC=2)S(=O)(=O)NC=2N=CC=CC=2)=C1 NCEXYHBECQHGNR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Chemically Coating (AREA)
Description
【0001】
【産業上の利用分野】
本発明は、プリント基板の高密度化、低コスト化などを目的とした一括積層タイプの多層基板において、基板中に内蔵される抵抗層として用いられる金属薄膜に関するものである。
【0002】
【従来技術】
近年の電子機器の軽薄短小化、高機能化に伴い、プリント基板には高密度実装が求められ、基板を多層化によることにより回路を3次元化して高密度回路を得る、いわゆる多層基板が用いられるケースが増えている。この多層基板において、従来は受動部品である抵抗、コンデンサーは表面実装されるのが一般的であったが、最近、これらの部品を多層基板中の層に内蔵する技術が開発されている。
【0003】
部品を多層基板中に内蔵するメリットとしては、
▲1▼実装工程を省略でき、製造コストを低減できる。
▲2▼基板表面の実装スペースや実装のためのスルーホールがなくなることにより基板形状の設計の自由度が増す。
▲3▼配線長を自由に調整しやすくなるため、高速信号に絶えられる構造をもつ回路を設計できる。
▲4▼導体層を金属のみとし、絶縁層を再生可能な熱可塑性樹脂のみを用いればリサイクルが可能となる。
などが挙げられる。このような背景から、部品を内蔵した多層基板が使われるケースが増えている。(これを一括積層と称する。)(例えば非特許文献1、非特許文献2、非特許文献3参照。)
【0004】
【非特許文献1】
安藤三津雄、岩田照徳「抵抗内臓多層プリント配線板」、Polyfile、1988年12月、第25巻、p.20−22
【非特許文献2】
「一括積層でコスト半減 部品内蔵で機能のみ込む」、日経エレクトロニクス、2002年4月22日号、p.120−123
【非特許文献3】
近藤宏司、外2名、「PALAP―リサイクル可能な一括多層プリント配線板―」、エレクトロニクス実装技術、平成14年9月、第18巻、第9号、p.60−63
【0005】
【発明が解決しようとする課題】
このような多層基板に内蔵される抵抗層用の材料としては、体積抵抗率が高く厚さの薄い材料を用いれば、抵抗部の配線の幅と長さをコントロールすることにより、所望の抵抗値を得るための設計が容易となる。このような抵抗体を形成する方法としては、Bi2Ru2O7、Pb2Ru2O6.5といった酸化物のペーストを回路上に印刷したあとプレスにより積層する方法があった。しかしながら、この方法ではコストがかかる、フレキシブル基板には不向きなどの問題があった。
【0006】
このような問題を解決する方法としては、金属めっきを抵抗体として用い、リジッドまたはフレキシブルの樹脂と積層後エッチングにより所定サイズに形成する方法と、最初から所定のサイズに電気めっきする方法が考えられた。この金属めっきの求められる性質としては、以下のことが挙げられる。
▲1▼上述のように、体積抵抗率の高いことが求められる。
▲2▼磁性の強い金属薄膜を用いた場合には、高周波電流の通電を阻害するため、磁性の弱い金属薄膜が求められる。
▲3▼めっきに異常電着などの欠陥がないことが求められる。
【0007】
しかし、プリント基板に金属をめっきしたものとしては、導体層である銅の配線として、必要部分にめっきされたものが用いられている。しかしながら、抵抗体として合金めっきをプリント基板上にめっきしたものが用いられることはこれまでなく、ましてFe−Ni合金めっきされたものはこれまで見られなかった。また、Fe−Ni合金めっきはこれまで磁気記憶媒体用、あるいは鉄鋼の連続鋳造用モールドの被覆用として用いられてきた。しかし磁気記憶媒体用としては高い磁性が必要であり、このためには高Ni組成のものが好まれていた。また、モールドの被覆用としてはクラックを生じにくくする必要があり、この場合にも内部応力の低い高Ni組成のものが好まれていた。しかし本発明のような高い抵抗率、低い磁性を得るために高Fe側の組成のものが使われるケースはなかった。
そこで本発明では、抵抗として適した組成を持つ合金めっきによって形成された抵抗体を提供することである。
【0008】
【問題点を解決するための手段】
発明者らは抵抗値が高く、磁性の低い金属薄膜を得るため鋭意研究した結果、Fe−Ni合金めっきに着目し、合金組成により、所望する抵抗値を持ち、さらに磁性が弱い金属薄膜が得られることを明らかにした。
【0009】
即ち、
化学組成が質量割合にて25〜33%のNiを含有し残部がFe及び不可避不純物からなり、体積抵抗率が600nΩ・m以上、であることを特徴とする多層基板の抵抗体用Fe−Ni合金めっき層、
である。
【0010】
【発明の実施の形態】
次に本発明の具体的な方法について述べる。
(1)メッキ種類及び条件
本発明は製作された金属薄膜の組成が、Ni25〜33%で残部が金属Feおよび不可避不純物の合金めっきであることにより特性が発揮される。このため、その条件を満たすことが可能な方法であれば、無電解めっき、あるいは電気めっきのどちらの手段を用いても良い。浴組成、電解条件についても同様である。
【0011】
(2)体積抵抗率および厚さ
上述のように、抵抗値を自由に設計するためには、素材の体積抵抗率が十分高く、厚さが小さいことが必要である。近年の高機能の多層基板に使用可能な箔の体積抵抗率は600nΩ・m以上であることが必要である。
【0012】
(3)Ni含有量
次に、Ni含有量を規定した理由について述べる。NiはFe中に固溶し、体積抵抗率を上昇させる。Ni含有量が25%未満および33%を超えた場合、磁性が強くなり高周波電流の通電には不向きとなる。また所望の体積抵抗率が得られなくなる。よってNi含有量を25〜33%と定めた。
【0013】
(4)微量成分
本発明の合金系はFe−Ni2元系であるがめっき層の機械的特性、耐食性などの特性を調整するために、Co、Cr、P、B、Au、Ag、Pt、Pdなどの元素を微量に添加することが可能である。これらについても本発明の目的とする抵抗率、磁性に関しては影響を及ぼさない。
【0014】
【実施例】
(1)実施例1
厚さ50μmのポリイミドフィルムの片面上に、無電解めっきにより厚さ20nmのNiシード層を形成した後、その上に表1に示す条件にてめっきを行い、所定の厚さのFe−Niめっき層を得た。その後、めっきされたフィルムから所定サイズの試験片を切り出して評価に用いた。
【0015】
【表1】
【0016】
(2)実施例2
実施例1と同様な方法にて、厚さ50μmのポリイミドフィルムの片面上に、無電解めっきにより厚さ20nmのNiシード層を形成した後、その上に表2に示す条件にてめっきを行い、所定の厚さのFe−Niめっき層を得た。その後、めっきされたフィルムから所定サイズの試験片を切り出して評価に用いた。
【0017】
【表2】
【0018】
(3)比較例
実施例1のめっき条件のうち、めっき浴組成の中の塩化第一鉄を100g/L、150g/Lにしてめっきを行った。得られためっきはエッチングして抵抗体とした。
【0019】
(4)測定方法
このようにして得られた抵抗体について、体積抵抗率、磁気特性を評価した。体積抵抗率は四端子法により求めた。磁気特性は室温で400Oeの磁界を与えたときの磁束密度を求めた。まためっき組成はICP(高周波プラズマ発光分析装置)で、抵抗体の厚さは蛍光X線膜厚計で測定した。
【0020】
(4)結果
【表3】
【0021】
得られた結果を表3に示す。結果から判るように、発明例は高い体積抵抗率を示し、良好な透磁率を有することが判る。それに対し、比較例No.7、No.8はNiの組成が適切な範囲から外れたため、十分な体積抵抗率が得られず、また強い磁性を持った例である。
【0022】
【発明の効果】
以上の説明で明らかなように、この発明によれば一括積層タイプの多層基板に適した内蔵抵抗体を提供することができる。[0001]
[Industrial application fields]
The present invention relates to a metal thin film used as a resistance layer incorporated in a substrate in a multi-layered multilayer substrate for the purpose of increasing the density and cost of a printed circuit board.
[0002]
[Prior art]
As electronic devices have become lighter, thinner, smaller and more functional in recent years, high-density mounting is required for printed circuit boards. So-called multi-layer boards are used, in which high-density circuits are obtained by making a circuit three-dimensional by using multi-layer boards. Increasing number of cases. Conventionally, in this multilayer substrate, resistors and capacitors, which are passive components, are generally surface-mounted, but recently, a technique for incorporating these components in layers in the multilayer substrate has been developed.
[0003]
As an advantage of incorporating components in a multilayer board,
(1) The mounting process can be omitted and the manufacturing cost can be reduced.
(2) Since there is no mounting space on the substrate surface or through holes for mounting, the degree of freedom in designing the substrate shape is increased.
(3) Since it becomes easy to freely adjust the wiring length, it is possible to design a circuit having a structure that can withstand high-speed signals.
(4) Recycling is possible by using only a metal as the conductor layer and using only a thermoplastic resin that can regenerate the insulating layer.
Etc. Against this background, there are an increasing number of cases where multilayer boards with built-in components are used. (This is referred to as collective lamination.) (See, for example, Non-Patent Document 1, Non-Patent Document 2, and Non-Patent Document 3.)
[0004]
[Non-Patent Document 1]
Mitsuo Ando and Teronori Iwata “Resistance Built-in Multilayer Printed Wiring Board”, Polyfile, December 1988, Vol. 25, p.20-22
[Non-Patent Document 2]
“Less cost by batch stacking and incorporating only functions with built-in components”, Nikkei Electronics, April 22, 2002, p. 120-123
[Non-Patent Document 3]
Koji Kondo and two others, “PALAP-Recyclable Collective Multilayer Printed Wiring Board”, Electronics Packaging Technology, September 2002, Vol. 18, No. 9, p. 60-63
[0005]
[Problems to be solved by the invention]
As a material for the resistance layer incorporated in such a multilayer substrate, if a material having a high volume resistivity and a small thickness is used, a desired resistance value can be obtained by controlling the width and length of the wiring of the resistance portion. The design to obtain is easy. As a method for forming such a resistor, there is a method in which an oxide paste such as Bi 2 Ru 2 O 7 or Pb 2 Ru 2 O 6.5 is printed on a circuit and then laminated by pressing. However, this method has problems such as high cost and unsuitability for flexible substrates.
[0006]
As a method for solving such a problem, a method of using metal plating as a resistor, forming a predetermined size by etching after laminating with a rigid or flexible resin, and a method of electroplating to a predetermined size from the beginning can be considered. It was. The properties required for this metal plating include the following.
(1) As described above, a high volume resistivity is required.
(2) When a strong magnetic metal thin film is used, a weak magnetic metal thin film is required in order to inhibit the application of high-frequency current.
(3) The plating is required to be free from defects such as abnormal electrodeposition.
[0007]
However, what plated the required part as copper wiring which is a conductor layer as what plated the metal to the printed circuit board is used. However, it has never been used as a resistor that has been plated with an alloy plating on a printed circuit board. In addition, the Fe—Ni alloy plating has been used so far for coating a magnetic storage medium or a continuous casting mold for steel. However, high magnetic properties are required for the magnetic storage medium, and for this purpose, a material having a high Ni composition was preferred. Moreover, it is necessary to make it hard to generate a crack for coating a mold, and in this case, a high Ni composition having a low internal stress was preferred. However, in order to obtain a high resistivity and low magnetism as in the present invention, there was no case where a composition with a high Fe side was used.
Therefore, the present invention is to provide a resistor formed by alloy plating having a composition suitable as a resistor.
[0008]
[Means for solving problems]
As a result of diligent research to obtain a metal thin film having a high resistance value and low magnetism, the inventors focused on Fe-Ni alloy plating, and obtained a metal thin film having a desired resistance value and a weak magnetism depending on the alloy composition. It was made clear that
[0009]
That is,
Fe-Ni for resistors of multilayer substrates, characterized in that the chemical composition contains 25 to 33% Ni by mass, the balance is Fe and inevitable impurities, and the volume resistivity is 600 nΩ · m or more. Alloy plating layer,
It is.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Next, a specific method of the present invention will be described.
(1) Types of plating and conditions The present invention exhibits characteristics when the composition of the manufactured metal thin film is an alloy plating of Ni25 to 33% with the balance being metallic Fe and inevitable impurities. For this reason, any method of electroless plating or electroplating may be used as long as the method can satisfy the conditions. The same applies to the bath composition and electrolysis conditions.
[0011]
(2) Volume resistivity and thickness As described above, in order to freely design the resistance value, the material must have a sufficiently high volume resistivity and a small thickness. The volume resistivity of a foil that can be used for a high-performance multilayer substrate in recent years needs to be 600 nΩ · m or more.
[0012]
(3) Ni content Next, the reason for defining the Ni content will be described. Ni dissolves in Fe and raises the volume resistivity. When the Ni content is less than 25% or more than 33%, the magnetism becomes strong and unsuitable for energizing a high-frequency current. Moreover, a desired volume resistivity cannot be obtained. Therefore, the Ni content is set to 25 to 33%.
[0013]
(4) Trace component The alloy system of the present invention is an Fe-Ni binary system, but Co, Cr, P, B, Au, Ag, Pt, in order to adjust the mechanical properties and corrosion resistance of the plating layer. It is possible to add a trace amount of an element such as Pd. These do not affect the resistivity and magnetism that are the object of the present invention.
[0014]
【Example】
(1) Example 1
A Ni seed layer having a thickness of 20 nm is formed on one surface of a polyimide film having a thickness of 50 μm by electroless plating, and then plated under the conditions shown in Table 1 to provide a Fe—Ni plating having a predetermined thickness. A layer was obtained. Thereafter, a test piece of a predetermined size was cut out from the plated film and used for evaluation.
[0015]
[Table 1]
[0016]
(2) Example 2
In the same manner as in Example 1, a 20 nm thick Ni seed layer was formed by electroless plating on one side of a 50 μm thick polyimide film, and then plated under the conditions shown in Table 2 above. A Fe—Ni plating layer having a predetermined thickness was obtained. Thereafter, a test piece of a predetermined size was cut out from the plated film and used for evaluation.
[0017]
[Table 2]
[0018]
(3) Comparative Example Among the plating conditions of Example 1, plating was performed with ferrous chloride in the plating bath composition being 100 g / L and 150 g / L. The obtained plating was etched to form a resistor.
[0019]
(4) Measuring method Volume resistivity and magnetic characteristics of the thus obtained resistor were evaluated. The volume resistivity was determined by the four probe method. For magnetic characteristics, the magnetic flux density was obtained when a magnetic field of 400 Oe was applied at room temperature. The plating composition was measured with an ICP (high frequency plasma emission analyzer), and the thickness of the resistor was measured with a fluorescent X-ray film thickness meter.
[0020]
(4) Results [Table 3]
[0021]
The obtained results are shown in Table 3. As can be seen from the results, the invention examples show high volume resistivity and good magnetic permeability. On the other hand, Comparative Example No. 7, no. No. 8 is an example in which the composition of Ni deviates from an appropriate range, so that a sufficient volume resistivity cannot be obtained and strong magnetism is obtained.
[0022]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to provide a built-in resistor suitable for a multi-layer substrate of a batch stack type.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003011790A JP4104995B2 (en) | 2003-01-21 | 2003-01-21 | Built-in resistor for multilayer boards |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003011790A JP4104995B2 (en) | 2003-01-21 | 2003-01-21 | Built-in resistor for multilayer boards |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004225078A JP2004225078A (en) | 2004-08-12 |
| JP4104995B2 true JP4104995B2 (en) | 2008-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003011790A Expired - Fee Related JP4104995B2 (en) | 2003-01-21 | 2003-01-21 | Built-in resistor for multilayer boards |
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| Country | Link |
|---|---|
| JP (1) | JP4104995B2 (en) |
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- 2003-01-21 JP JP2003011790A patent/JP4104995B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2004225078A (en) | 2004-08-12 |
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