JP4124298B2 - Surface treatment method for conductive polymer material - Google Patents
Surface treatment method for conductive polymer material Download PDFInfo
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- JP4124298B2 JP4124298B2 JP28606198A JP28606198A JP4124298B2 JP 4124298 B2 JP4124298 B2 JP 4124298B2 JP 28606198 A JP28606198 A JP 28606198A JP 28606198 A JP28606198 A JP 28606198A JP 4124298 B2 JP4124298 B2 JP 4124298B2
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Description
【0001】
【発明の属する技術分野】
本発明は、導電性高分子材料の表面処理方法に関する。更に詳しくは、レーザー照射法による導電性高分子材料の表面処理方法に関する。
【0002】
【従来の技術】
導電性高分子材料は、ディスプレー材料(表示素子)、宇宙・航空用軽量導電材料、電磁波シールド用コンポジット、スイッチング素子、非線形素子、超微細配線技術、電解効果型トランジスタ、光記録材料、被写機、一次電池、二次電池、光電池、太陽電池等の幅広い分野での利用が可能である。
【0003】
従来、高分子材料に導電性を付与する方法としては、高分子材料に導電性微粒子を配合、分散させて粒子間の導電ネットワークを形成させる方法や導電性有機高分子材料にドーパントを加える方法などが用いられている。しかしながら、これらの従来の方法では、母材に導電性を付与させることはできても、その表面には電子を放出する特性はない。
【0004】
本発明者らは、これ迄紫外レーザー処理によって高分子材料の表面微細構造の形成を効果的に行う方法を見出しており(特開平2-69534号公報、同2-123322号公報、同2-196219号公報、同4-146262号公報および同10-87858号公報)、例えばナノ秒のパルスレーザー照射によるアブレーションによって、高分子材料表面に微細構造が形成されることを見出している。
【0005】
これらの方法によれば、複雑な光造形工程を用いずとも、高分子材料表面に新たな微細構造を簡便に形成させることができるが、例えば上記特開昭10-87858号公報に記載されるゴムの表面処理方法(平均粒径約100nm以下のカーボンブラックを10〜60体積%の割合で含有する加硫ゴムの表面に波長380nm以下の紫外レーザー光を照射して表面処理する方法)では、加硫ゴム表面に形成される微細構造の密度が低くしかもその先端部の直径が大きくて、微細構造形成能力の点では必ずしも満足し得るものではなかった。
【0006】
【発明が解決しようとする課題】
本発明の目的は、微細構造密度が高くしかもその先端部直径が小さい微細構造を形成し得る導電性高分子材料の表面処理方法を提供することにある。
【0007】
【課題を解決するための手段】
かかる本発明の目的は、導電性微粒子を含有する高分子材料にパルス幅50ps以下のレーザー光を照射し、高分子材料表面に電子放出特性にすぐれた導電性微細構造を形成させる導電性高分子材料の表面処理方法によって達成される。
【0008】
【発明の実施の形態】
高分子材料に添加される導電性微粒子としては、カーボンブラック、グラファイト、金属微粒子、金属酸化物微粒子等の導電性を有する微粒子であって、レーザー光線によって容易に分解しないものが望ましい。また、それの粒子サイズは、一次粒子径が約5μm以下、好ましくは約1μm以下である。
【0009】
これらの導電性微粒子の高分子材料に対する添加割合は、粒子のサイズ、形状、化学的性状などに依存し、また高分子材料との相溶性などを考慮して決められるが、一般には高分子材料中において、一次粒子の連続体あるいは網目構造(パーコレーション)を形成させて導電性を発現させるため、一次粒子のパーコレーションが発現する量以上の添加量でなければならない。
【0010】
しかも、本発明方法によって形成される電子放出特性にすぐれた導電性微細構造は、高分子材料がアブレーション(レーザー光照射による除去)され、残った導電性微粒子が高分子材料表面を覆い、レーザー光を遮蔽することにより形成されるので、かかる観点から導電性微粒子は高分子材料100重量部当り約5重量部以上の割合で用いられ、体積%でいえば導電性微粒子含有高分子材料中約5〜50%、好ましくは約10〜25%を占めるような割合で用いられる。
【0011】
かかる導電性微粒子が添加される高分子材料としては、結晶性あるいは非晶性の各種合成樹脂、各種合成ゴムまたは天然ゴムの(加硫)成形品ばかりではなく、フィルム、シート、繊維、繊維強化樹脂、コーティング層など任意の形状のものを用いることができ、特に常温で変形し易いなどのため微細構造加工が一般に困難なゴム材料に本発明方法は好適に適用される。また、導電性微粒子添加高分子材料を延伸したり、伸長したり、あるいは溶融結晶化または溶融アモルファス化した材料への適用も可能である。
【0012】
これらの導電性微粒子添加高分子材料は、パルス幅が50ps(ピコ秒)以下、好ましくは10ps以下のパルス幅を有するレーザー光によって照射処理される。このようなパルス幅の極短パルスレーザーは、高分子材料または導電性微粒子の吸収帯(一光子吸収帯ならびに多光子吸収帯)に一致する光を発振し、これらの各材料の吸収帯と一致すれば、レーザー光の基本波長を用いてもよいし、また高調波を用いることもできる。実際には、50ps以下またはfs(フェムト秒)領域のパルス幅を有するNd+:YLF、Nd+:YAG、Ti:sapphireレーザー等が好んで用いられる。
【0013】
これに対して、50ps以上のパルス幅のレーザー光を用いた場合には、同じ深さや炭化度合にするのにより多くの照射時間がかかり、その結果照射界面が徐々に酸化されて境界がぼやけた微細構造となり、また微細構造の表面密度も少なくなるというように、電子放出特性を左右する微細構造形成能力が劣るようになる。
【0014】
極短パルスレーザーは、高強度で基質に照射できるので、上記の微細構造形成を効率良く進行させることが可能である。用いられるレーザー光の光強度は、アブレーションが起るしきい値強度よりも高い強度であることが望ましく、一般には約0.05mJ/cm2/パルス以上、好ましくは約1mJ/cm2/パルス以上である。また、繰返し速度は一般に約0.1〜100Hzであり、照射時間は約0.5〜100秒間程度である。
【0015】
レーザー光の照射は、高分子材料の改質希望部位に相当するマスク(金属板製パターン等)を通過させたレーザービームを照射する方法、集光したレーザービームを走査(スキャン)させて希望する照射部分のみに表面処理する方法などによって行われる。
【0016】
【作用】
極短パルスレーザーを導電性微粒子含有高分子材料に照射すると、アブレーションによって高分子材料表面に導電性微粒子を核とする微細構造が形成される。このとき、用いられた極短パルスレーザーは極めてパルス幅の短かい光であるので、アブレーションでは副次的な熱反応を抑制することができる。このため、ナノ秒などの長いパルス光を照射したときと比べて、高分子材料表面での溶融が殆んど起らないので、高い表面密度で微細構造を形成させることができる。
【0017】
【発明の効果】
本発明方法は、次のような特徴を有する。
(1)高分子材料表面に形成された微細構造は、導電性微粒子を核とする凝集塊から形成されるため自己導電性を有しており、その先端部からの電子放出特性がみられる。
(2)微細構造を形成した高分子材料は、その表面部分のみが改質されており、最表層部以外の部分は元の材料物性を維持しており、このように母材内部はレーザー処理による損傷を受けていないため、高分子材料としての特徴を最大限に活用することができる。
(3)レーザー光による処理に際し、処理雰囲気を選ばずしかも短時間で微細構造を形成させることが可能であり、しかも表面に形成された微細構造の厚みは母材に比べて極めて薄いので、高分子材料の機械的特性が損われるようなこともない。
(4)極短パルスレーザーによる非熱的なアブレーションにより、高分子材料表面に微細構造を形成し得るので、表面処理が極めて効果的に行われる。
(5)緻密で高密度でありしかも先端部直径が小さいという電子放出特性にとって好ましい性質を備えた微細構造を容易に得ることができる。
(6)高分子材料は、半導体材料や金属材料と比べて柔軟性の点ですぐれているので、その表面に形成された微細構造は、湾曲した面やフレキシブルな電子放出材料としても利用することができる。
(7)このような微細構造を表面に有する高分子材料は、電界放射型のエミッター素子として、ディスプレー材料や電子素子として有効に用いられる。
【0018】
【実施例】
次に、実施例について本発明を説明する。
【0019】
実施例
アクリルゴム(日本メクトロン製品PA404K)100部(重量、以下同じ)およびISAFカーボンブラック(三菱化学製品ダイヤブラックH)50部(21.7体積%)をニーダを用いて10分間混練した後、10インチ2本ロールで練り増しし、一度ロールから外して冷却した。その後、再度ロールで熱入れを行ない、加硫剤(イオウ0.3部、ステアリン酸ナトリウム3部、ステアリン酸カリウム1部)を投入してコンパウンドを調製し、これを195℃、3分間のプレス加硫および165℃、6時間のオーブン加硫(二次加硫)によって、厚さ2mmのカーボンブラック含有アクリルゴムシートを得た。
【0020】
このゴムシートについて、Nd+:YLFレーザーの2倍高調波(波長524nm)を用い、パルス幅10ps、照射強度1J/cm2/パルス、パルス繰返し速度10Hz、照射時間10秒間、照射雰囲気大気中、温度室温の条件下で照射を行った後、レーザー処理によって微細構造を形成させた試料表面をSEM(走査型電子顕微鏡)で観察した。この際、試料表面に既に導電性があるので、金コートなどの後処理は行わずに、そのままSEM観察を行った。
【0021】
図1〜2には、それぞれ倍率を変えたSEM観察像が示されており、これらの写真から、ゴムシート表面に形成された微細構造の表面密度は0.035本/μm2であり、その先端部の直径は2μm程度であることが分った。更に、写真を詳細に観察すると、微細構造の先端部のコントラストがその周囲よりも明るくなっていることが分る。このことは、微細構造の先端部から二次電子が多量に放出されていることを示している。
【0022】
また、このレーザー処理を行ったカーボンブラック含有ゴムシートについて、電子放出特性を調べるために、真空容器中において電流―電圧(I-V)特性を測定し、次のような結果を得た。
これらの結果から、電子放出に関する電圧しきい値は15V付近であることが見積もられた。
【0023】
比較例
実施例において、ピコ秒パルスのNd+:YLFレーザーの2倍高調波の代りに、ナノ秒パルスのキセノン-塩素エキシマレーザー(波長308nm)を用い、パルス幅30ns、照射強度0.5J/cm2/パルス、パルス繰返し速度1Hz、照射時間100秒間、照射雰囲気大気中、温度室温の条件下で照射を行った後、レーザー処理によってゴムシート表面に形成された微細構造のSEM観察を行った。その結果、微細構造の表面密度は0.0028本/μm2であり、またその先端部の直径は10μm以上のものが大部分であった。
【図面の簡単な説明】
【図1】実施例でのSEM写真(500倍)である。
【図2】実施例でのSEM写真(2000倍)である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface treatment method for a conductive polymer material. More specifically, the present invention relates to a surface treatment method for a conductive polymer material by a laser irradiation method.
[0002]
[Prior art]
Conductive polymer materials include display materials (display elements), lightweight conductive materials for space and aviation, composites for electromagnetic wave shielding, switching elements, nonlinear elements, ultrafine wiring technology, field effect transistors, optical recording materials, and projectors. It can be used in a wide range of fields such as primary batteries, secondary batteries, photovoltaic cells and solar cells.
[0003]
Conventionally, as a method for imparting conductivity to a polymer material, a method in which conductive particles are blended and dispersed in a polymer material to form a conductive network between the particles, a method in which a dopant is added to a conductive organic polymer material, etc. Is used. However, even though these conventional methods can impart conductivity to the base material, the surface does not have the property of emitting electrons.
[0004]
The present inventors have found a method for effectively forming a surface microstructure of a polymer material by ultraviolet laser treatment so far (Japanese Patent Laid-Open Nos. 2-69534, 2-123322, 2- 196219, 4-146262, and 10-87858), for example, it has been found that a fine structure is formed on the surface of a polymer material by ablation by pulse laser irradiation of nanoseconds.
[0005]
According to these methods, it is possible to easily form a new fine structure on the surface of the polymer material without using a complicated stereolithography process. For example, it is described in JP-A-10-87858. In the rubber surface treatment method (a method of performing surface treatment by irradiating the surface of a vulcanized rubber containing carbon black having an average particle size of about 100 nm or less in a ratio of 10 to 60% by volume with ultraviolet laser light having a wavelength of 380 nm or less) The density of the microstructure formed on the surface of the vulcanized rubber is low, and the diameter of the tip is large, which is not always satisfactory in terms of the ability to form a microstructure.
[0006]
[Problems to be solved by the invention]
An object of the present invention is to provide a surface treatment method for a conductive polymer material capable of forming a microstructure having a high microstructure density and a small tip diameter.
[0007]
[Means for Solving the Problems]
An object of the present invention is to irradiate a polymer material containing conductive fine particles with a laser beam having a pulse width of 50 ps or less to form a conductive microstructure having excellent electron emission characteristics on the surface of the polymer material. This is achieved by the material surface treatment method.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
The conductive fine particles added to the polymer material are preferably fine particles having conductivity such as carbon black, graphite, metal fine particles, metal oxide fine particles and the like, which are not easily decomposed by a laser beam. Further, the particle size thereof is such that the primary particle diameter is about 5 μm or less, preferably about 1 μm or less.
[0009]
The addition ratio of these conductive fine particles to the polymer material depends on the size, shape, chemical properties, etc. of the particle, and is determined in consideration of compatibility with the polymer material. In order to express the conductivity by forming a continuum of primary particles or a network structure (percolation), the added amount must be equal to or greater than the amount by which percolation of the primary particles is manifested.
[0010]
In addition, the conductive microstructure formed by the method of the present invention has excellent electron emission characteristics. The polymer material is ablated (removed by laser light irradiation), and the remaining conductive fine particles cover the surface of the polymer material. From this point of view, the conductive fine particles are used in a ratio of about 5 parts by weight or more per 100 parts by weight of the polymer material. It is used in such a ratio that it accounts for ˜50%, preferably about 10-25%.
[0011]
Polymer materials to which such conductive fine particles are added include not only crystalline or amorphous synthetic resins, various synthetic rubbers or natural rubber (vulcanized) molded products, but also films, sheets, fibers, and fiber reinforced products. The resin of the present invention can be used in any shape such as a coating layer, and the method of the present invention is suitably applied to rubber materials that are generally difficult to process microstructurally because they are easily deformed at room temperature. Further, the present invention can be applied to a material in which the conductive fine particle-added polymer material is stretched, stretched, melt-crystallized or melt-amorphized.
[0012]
These conductive fine particle-added polymer materials are irradiated with a laser beam having a pulse width of 50 ps (picoseconds) or less, preferably 10 ps or less. Ultrashort pulse lasers with such a pulse width oscillate light that matches the absorption band (one-photon absorption band and multi-photon absorption band) of polymer materials or conductive fine particles, and match the absorption bands of each of these materials. In this case, the fundamental wavelength of laser light may be used, and harmonics may be used. In practice, an Nd + : YLF, Nd + : YAG, Ti: sapphire laser or the like having a pulse width of 50 ps or less or fs (femtosecond) region is preferably used.
[0013]
On the other hand, when laser light with a pulse width of 50 ps or more is used, more irradiation time is required to achieve the same depth and carbonization degree. As a result, the irradiation interface is gradually oxidized and the boundary is blurred. The fine structure forming ability that influences the electron emission characteristics becomes inferior, such as a fine structure and a reduced surface density of the fine structure.
[0014]
Since the ultrashort pulse laser can irradiate the substrate with high intensity, it is possible to efficiently advance the fine structure formation. The light intensity of the laser beam used is desirably higher than the threshold intensity at which ablation occurs, generally about 0.05 mJ / cm 2 / pulse or more, preferably about 1 mJ / cm 2 / pulse or more. is there. The repetition rate is generally about 0.1 to 100 Hz, and the irradiation time is about 0.5 to 100 seconds.
[0015]
Laser beam irradiation is desired by irradiating a laser beam that has passed through a mask (metal plate pattern, etc.) corresponding to the desired modification of the polymer material, or by scanning the focused laser beam. For example, the surface treatment is performed only on the irradiated portion.
[0016]
[Action]
When a polymer material containing conductive fine particles is irradiated with an ultrashort pulse laser, a fine structure having conductive fine particles as nuclei is formed on the surface of the polymer material by ablation. At this time, since the ultrashort pulse laser used is light having a very short pulse width, secondary heat reaction can be suppressed by ablation. For this reason, since the melting on the surface of the polymer material hardly occurs as compared with the case of irradiation with a long pulse light such as nanoseconds, a fine structure can be formed with a high surface density.
[0017]
【The invention's effect】
The method of the present invention has the following features.
(1) Since the microstructure formed on the surface of the polymer material is formed from an agglomerate having conductive fine particles as a nucleus, it has self-conductivity and exhibits electron emission characteristics from its tip.
(2) The surface of the polymer material with a fine structure has been modified, and the parts other than the outermost layer maintain the original material properties. Since it is not damaged by the above, the characteristics as a polymer material can be fully utilized.
(3) When processing with laser light, it is possible to form a fine structure in a short time without selecting the treatment atmosphere, and the thickness of the fine structure formed on the surface is extremely thin compared to the base material. The mechanical properties of the molecular material are not impaired.
(4) Since a fine structure can be formed on the surface of the polymer material by non-thermal ablation using an ultrashort pulse laser, the surface treatment is performed extremely effectively.
(5) It is possible to easily obtain a fine structure having a desirable property for electron emission characteristics such as a dense and high density and a small tip diameter.
(6) Since polymer materials are superior in terms of flexibility compared to semiconductor materials and metal materials, the microstructure formed on the surface should also be used as a curved surface or a flexible electron emission material. Can do.
(7) The polymer material having such a fine structure on the surface is effectively used as a display material or an electronic device as a field emission type emitter device.
[0018]
【Example】
Next, the present invention will be described with reference to examples.
[0019]
Example Acrylic rubber (Nippon Mektron product PA404K) 100 parts (weight, the same applies below) and ISAF carbon black (Mitsubishi Chemical product Dia Black H) 50 parts (21.7% by volume) were kneaded for 10 minutes using a kneader, then 10 inches. Kneaded with two rolls, once removed from the roll and cooled. Then heat again with a roll and add a vulcanizing agent (0.3 parts sulfur, 3 parts sodium stearate, 1 part potassium stearate) to prepare a compound, which is vulcanized at 195 ° C for 3 minutes A 2 mm thick carbon black-containing acrylic rubber sheet was obtained by oven vulcanization (secondary vulcanization) at 165 ° C. for 6 hours.
[0020]
About this rubber sheet, Nd + : YLF laser double harmonic (wavelength 524nm), pulse width 10ps, irradiation intensity 1J / cm 2 / pulse, pulse repetition rate 10Hz, irradiation time 10 seconds, irradiation atmosphere in the atmosphere, After irradiation at room temperature, the surface of the sample on which a fine structure was formed by laser treatment was observed with a scanning electron microscope (SEM). At this time, since the sample surface was already conductive, SEM observation was performed as it was without performing post-treatment such as gold coating.
[0021]
FIGS. 1 and 2 show SEM observation images at different magnifications. From these photographs, the surface density of the microstructure formed on the rubber sheet surface is 0.035 / μm 2 , and its tip It was found that the diameter of this was about 2 μm. Further, when the photograph is observed in detail, it can be seen that the contrast of the tip of the fine structure is brighter than its surroundings. This indicates that a large amount of secondary electrons are emitted from the tip of the fine structure.
[0022]
Further, in order to investigate the electron emission characteristics of the carbon black-containing rubber sheet subjected to the laser treatment, current-voltage (IV) characteristics were measured in a vacuum vessel, and the following results were obtained.
From these results, it was estimated that the voltage threshold for electron emission was around 15V.
[0023]
In a comparative example, a nanosecond pulse xenon-chlorine excimer laser (wavelength 308 nm) was used instead of the second harmonic of a picosecond pulse Nd + : YLF laser, pulse width 30 ns, irradiation intensity 0.5 J / cm 2 / Pulse, pulse repetition rate 1 Hz, irradiation time 100 seconds, irradiation atmosphere atmosphere, temperature room temperature conditions, and then SEM observation of the microstructure formed on the rubber sheet surface by laser treatment. As a result, the surface density of the fine structure was 0.0028 / μm 2 , and most of the tip had a diameter of 10 μm or more.
[Brief description of the drawings]
FIG. 1 is an SEM photograph (500 times) in an example.
FIG. 2 is an SEM photograph (2000 times) in the example.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28606198A JP4124298B2 (en) | 1998-09-22 | 1998-09-22 | Surface treatment method for conductive polymer material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP28606198A JP4124298B2 (en) | 1998-09-22 | 1998-09-22 | Surface treatment method for conductive polymer material |
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| JP2000095885A JP2000095885A (en) | 2000-04-04 |
| JP4124298B2 true JP4124298B2 (en) | 2008-07-23 |
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| JP28606198A Expired - Lifetime JP4124298B2 (en) | 1998-09-22 | 1998-09-22 | Surface treatment method for conductive polymer material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4610120B2 (en) * | 2000-08-23 | 2011-01-12 | 日東電工株式会社 | Plastic structure and method for forming the plastic structure |
| JP4565754B2 (en) * | 2001-02-26 | 2010-10-20 | 日東電工株式会社 | Plastic structure |
| JP2002294086A (en) * | 2001-04-02 | 2002-10-09 | Nitto Denko Corp | Plastic material for laser processing and plastic structure processed from the material |
| JP4806786B2 (en) * | 2005-02-24 | 2011-11-02 | 株式会社イノアックコーポレーション | Simulated skin and method for producing the same |
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