JP4130620B2 - Resin-sealed semiconductor device - Google Patents

Description

  The present invention relates to a resin-sealed semiconductor device having a structure in which a semiconductor element is connected to a semiconductor substrate using wire bonding, and this structure is resin-sealed.

  A conventional semiconductor device will be described with reference to FIGS. 9, 10, and 11 by taking a ball grid array type semiconductor device as an example.

  9A is a front view of the semiconductor device before resin sealing, FIG. 9B is a cross-sectional view of the semiconductor device after resin sealing, and FIG. 10 shows the step of resin sealing after wire bonding. 10 (a) to 10 (d) are all sectional views, FIG. 10 (a) is after wire bonding, FIG. 10 (b) is inserted into the mold cavity 7, and FIG. 10 (c) is resin. During the sealing, FIG. 10D shows the semiconductor device after the resin sealing.

  In each figure, 1 is a semiconductor substrate, 2 is a semiconductor element mounted on the semiconductor substrate 1, 4 is an electrode on the semiconductor substrate 1, 5 is a pad on the semiconductor element 2, and 3 is a wire bonding connection between the electrode 4 and the pad 5. A wire 6 is a sealing resin.

  In the conventional ball grid array type semiconductor device, as shown in FIG. 10A, the pad 5 of the semiconductor element 2 and the electrode 4 on the semiconductor substrate are connected by a wire bonding structure. Further, as shown in FIG. 10B, the resin is inserted into the mold cavity 7, and as shown in FIG. 10C, resin is injected from the gate 8 portion of the mold cavity 7 to be sealed with resin. When the resin sealing is completed, the semiconductor device is completed as shown in FIG.

  At this time, as shown in FIG. 11, large carbon particles 9 may be generated in the sealing resin 6 and may be sandwiched between the wires 3 to cause a leak phenomenon.

  Further, due to the improvement of the operating frequency, electromagnetic waves emitted from the semiconductor element 2 or the wire 3 may affect the outside, or external electromagnetic waves may affect the signals in the semiconductor element 2 or the wire 3. On the other hand, as a prior art, there is one that incorporates a shield (see, for example, Patent Document 1).

FIG. 12 shows a structure for preventing the influence of electromagnetic waves by incorporating a conventional shield described in Patent Document 1. As shown in the figure, the semiconductor chip 19 mounted on the island 18 has a bowl shape from the vertical direction. The mesh-shaped metal plate 22 is covered and connected to the ground pin, and the mesh-shaped metal plate 22 is included in the resin body 23 and molded. Reference numeral 20 denotes a lead, and 21 denotes a bonding wire.
JP 07-32254 A

  By the way, there are the following problems in the conventional technology. As a first problem, carbon is often contained in the component in the sealing resin, but this carbon may become a mass of large carbon particles due to manufacturing variations and storage conditions of the resin itself. Particles are sandwiched between wires, causing a leak failure between the wires and causing malfunction of the semiconductor circuit.

  Solving this problem is very effective because it not only prevents malfunction of the semiconductor circuit, but also makes it possible to use a resin with a large manufacturing variation and relax the conditions for storage management.

  Further, as a second problem, due to the improvement of the operating frequency, the electromagnetic wave emitted from the semiconductor element or the wire affects the outside, or the external electromagnetic wave affects the signal in the semiconductor element or the wire. It has become a problem to have caused a malfunction.

  Solving these problems prevents the malfunction of the semiconductor circuit and is very effective.

In order to solve the above problem, a resin-encapsulated semiconductor device of the present invention includes a semiconductor element having a plurality of rows of pads, a semiconductor substrate having a plurality of rows of electrodes, and mounting the semiconductor elements on the upper surface, A resin-encapsulated semiconductor device comprising a sealing resin that seals the semiconductor element and the semiconductor substrate, wherein the pads in the innermost row and the electrodes in the plurality of rows among the plurality of rows of pads. A dummy wire that connects the electrodes in the outermost row, the pad located in the outer row from the pad in the innermost row, and the electrode located in the inner row from the electrode in the outermost row by providing a wire, the dummy wire, wherein to increase the number from wire, characterized by being configured to stretch in a narrow interval.
According to another aspect of the present invention, there is provided a resin-encapsulated semiconductor device comprising: a semiconductor element having a pad on the periphery of the upper surface; a semiconductor substrate having a plurality of rows of electrodes; A resin-encapsulated semiconductor device comprising a sealing resin that seals the semiconductor substrate, the plain pad placed inside the pad on the upper surface of the semiconductor element, the plain pad, By providing a dummy wire that connects the electrodes in the outermost row among the electrodes in the plurality of rows, a wire that connects the pads and the electrodes located in an inner row from the electrodes in the outermost row. The dummy wires are configured to have a larger number than the wires and to be stretched at a narrow interval.

  As described above, according to the present invention, it is possible to reduce leakage defects between wires due to the carbon particles contained in the sealing resin of the semiconductor device, and to exhibit an electromagnetic shielding effect. It is effective to prevent.

  Embodiments of the present invention will be described below with reference to the drawings. In the following description, members corresponding to those described in FIGS. 9 to 11 are denoted by the same reference numerals.

  FIG. 1A is a front view of a resin-encapsulated semiconductor device according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view of the resin-encapsulated semiconductor device of FIG.

  In the first embodiment, in addition to the conventional structure, dummy wires 10 are provided outside the wire 3 at a pitch narrower than that of the wire 3. The dummy wire 10 is connected to a dummy wire pad 12 provided inside the pad 5 on the semiconductor element 2 for the wire 3 on the semiconductor element 2, and the electrode 4 for the wire 3 on the semiconductor substrate 1. Are connected to the dummy wire electrode 11 provided on the outside. Furthermore, the dummy wires 10 are stretched on the outside so as to cover the entire wire 3 and at a pitch narrower than that of the wires 3 and more than the wires 3.

  With this configuration, even if carbon particles 9 are present, as shown in FIG. 2, if the carbon particles 9 are larger than the interval between the dummy wires 10, they cannot enter the interior. Thus, no leakage occurs between the wires 3.

  Further, as shown in FIG. 3, if the carbon particles 9 are smaller than the interval between the dummy wires 10, the carbon particles 9 can enter the inside, but since the interval is smaller than the interval between the wires 3, It does not lead to leaks.

  4A is a front view of the semiconductor device according to the second embodiment of the present invention, and FIG. 4B is a cross-sectional view of the semiconductor device of FIG.

  The second embodiment differs from the first embodiment in that a dummy wire electrode 11 is not provided for each dummy wire 10 on the semiconductor substrate 1 but a long dummy wire for connecting a number of dummy wires 10 in common. It is the structure which provided the electrode 13 for every edge | side. As shown in FIG. 5, the dummy wire electrode 13 may be a ring-shaped dummy wire electrode 15 instead of each side.

  Therefore, in the second embodiment, even if the semiconductor elements 2 are different, it is possible to arrange the same pads, and the common use of the semiconductor substrate design is promoted.

  FIG. 6A is a front view of a semiconductor device according to Embodiment 3 of the present invention, and FIG. 6B is a cross-sectional view of the semiconductor device of FIG.

  The third embodiment is different from the first embodiment in that a dummy wire pad 12 is not provided for each dummy wire 10 on the semiconductor element 2 but a long dummy wire for connecting a number of dummy wires 10 in common. It is the structure which provided the pad 14 for every edge | side. As shown in FIG. 7, the dummy wire pad 14 may be a ring-shaped dummy wire pad 16 instead of each side.

  Therefore, in the third embodiment, even if the semiconductor substrate 1 is different, it is possible to arrange the same pads, and the common use of the semiconductor substrate design is promoted.

  FIG. 8A is a front view of a semiconductor device according to Embodiment 4 of the present invention, and FIG. 8B is a cross-sectional view of the semiconductor device of FIG. FIG. 8 shows a case where a dummy dummy wire substrate pad is provided.

  In the fourth embodiment, compared to the first embodiment, a plane-like dummy wire semiconductor element upper pad 17 is provided. By connecting the plane-like dummy wire pad 17 to a constant potential, a dummy wire is provided. In addition to the pad 17, all the dummy wires 10 are kept at a constant potential.

  For this reason, in Embodiment 4, the effect of an electromagnetic shield with respect to the electromagnetic wave emitted from the semiconductor element 2 or the wire 3 and the effect of the electromagnetic shield with respect to the electromagnetic wave entering the semiconductor element 2 or the wire 3 from the outside are obtained. .

  The present invention is applied to a resin-encapsulated semiconductor device in which a portion where a semiconductor element is connected to a semiconductor substrate using wire bonding is resin-encapsulated, and in particular, leakage defects between wires due to carbon particles contained in the encapsulating resin are reduced. It is effective when applied to a resin-encapsulated semiconductor device that reduces and prevents electromagnetic malfunction by exhibiting an electromagnetic shielding effect.

(A) is a front view of the resin-encapsulated semiconductor device in Embodiment 1 of the present invention, and (b) is a cross-sectional view of the resin-encapsulated semiconductor device of (a). Schematic which shows the phenomenon when carbon particles are larger than a wire space | interval in Embodiment 1. Schematic which shows the phenomenon in case carbon particles are smaller than a dummy wire space | interval in Embodiment 1. (A) is a front view of the resin-encapsulated semiconductor device according to Embodiment 2 of the present invention, and (b) is a cross-sectional view of the resin-encapsulated semiconductor device of (a). The front view which shows the modification in Embodiment 2, (b) is sectional drawing of the modification of (a). (A) is a front view of the resin-encapsulated semiconductor device according to Embodiment 3 of the present invention, and (b) is a cross-sectional view of the resin-encapsulated semiconductor device of (a). The front view which shows the modification in Embodiment 3, (b) is sectional drawing of the modification of (a). (A) is a front view of the semiconductor device in Embodiment 4 of this invention, (b) is sectional drawing of the semiconductor device of (a). (A) is a front view which shows before resin sealing in the conventional semiconductor device, (b) is sectional drawing which shows after resin sealing in the semiconductor device of (a) (A)-(d) is schematic which shows the process of the manufacturing method of the conventional semiconductor device. (A) is a front view showing a case where carbon particles are sandwiched between wires in a conventional resin-encapsulated semiconductor device, and (b) is a cross-sectional view of the resin-encapsulated semiconductor device in the state (a). Sectional view showing a semiconductor device with a structure that prevents the influence of electromagnetic waves by incorporating a conventional shield

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Semiconductor element 3 Wire 4 Electrode 5 Pad 6 Sealing resin 9 Carbon particle 10 Dummy wire 11, 13, 15 Dummy wire electrode 12, 14, 16, 17 Dummy wire pad

Claims (6)

A semiconductor element having a plurality of rows of pads;
A semiconductor substrate having a plurality of rows of electrodes and mounting the semiconductor element on an upper surface;
A resin-encapsulated semiconductor device comprising a sealing resin that seals the semiconductor element and the semiconductor substrate,
Among the plurality of pads, a dummy wire that connects the pad in the innermost row and the electrode in the outermost row among the electrodes in the plurality of rows,
A wire connecting the pad located in the outer row from the pad in the innermost row and the electrode located in the inner row from the electrode in the outermost row;
The dummy wire is resin-sealed semiconductor device characterized by being stretched in front Symbol number is more than a wire, and closely spaced. The resin-encapsulated semiconductor device according to claim 1, wherein the outermost row of electrodes is linear or ring-shaped . 2. The resin-encapsulated semiconductor device according to claim 1, wherein the innermost pads are linear or ring-shaped .   A semiconductor element having a pad on the periphery of the upper surface;
  A semiconductor substrate having a plurality of rows of electrodes and mounting the semiconductor element on an upper surface;
  A resin-encapsulated semiconductor device comprising an encapsulating resin that encapsulates the semiconductor element and the semiconductor substrate,
  A plain pad placed inside the pad on the upper surface of the semiconductor element;
  A dummy wire connecting the plain pad and the electrode in the outermost row of the plurality of rows of electrodes;
  A wire connecting the pad and the electrode located in the inner row from the electrode in the outermost row;
  The resin-encapsulated semiconductor device is characterized in that the dummy wires are larger in number than the wires and are stretched at a narrow interval. All of the resin-encapsulated semiconductor device according dummy wire to any one of claims 1 to 5, characterized in that the constant potential. 6. The resin-encapsulated semiconductor device according to claim 1 , wherein an interval between the dummy wires is smaller than a size of carbon particles in the encapsulating resin .

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