JP4133448B2 - Cleaning device and cleaning method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a cleaning device and a cleaning method for removing fine dust and dust attached to the surface of a plate-like element and cleaning the surface of the plate-like element.
[0002]
[Prior art]
When manufacturing a semiconductor device, a display device, or the like, fine dust and dust adhering to the substrate surface affects the yield and reliability of the device regardless of its size. Therefore, it is necessary to remove dust and dust attached to the substrate surface. For example, in the conventional technique for cleaning the surface of a plate-like element having a nano thin film with poor mechanical strength on the substrate surface, the plate-like element is immersed in an active liquid such as an organic solvent and pure water, and ultrasonic vibration and An external stimulus such as boiling is given to the plate-like element surface. Thereby, fine dust and dust adhering to the surface of the plate-like element are removed. As described above, techniques for cleaning an object to be cleaned such as a substrate surface are shown in the first to fifth prior arts.
[0003]
In the first prior art, in a process of manufacturing a color filter substrate for a liquid crystal display, a color filter substrate material is placed on a conveyance roller, and the substrate material is conveyed while rotating the conveyance roller to convey the substrate material. A nonionic surfactant solution is uniformly sprayed on the resin protective film of the material. Then, a plurality of synthetic fibers are implanted on the circumferential surface of the resin protective film surface of the substrate material, and the brush rotated by the conveying roller is brought into contact with the surface to perform brush cleaning. Next, after cleaning by spraying pure water onto the surface of the protective film of the substrate material that has been subjected to brush cleaning, the substrate material is transferred to a cleaning tank, and ultra-ultrasonic cleaning is performed by driving an ultrasonic oscillator. In the first conventional technology, before performing ultrasonic cleaning, by performing brush cleaning, fine glass pieces and resin pieces that cannot be removed only by ultrasonic cleaning are removed (for example, Patent Documents). 1).
[0004]
In the second prior art, in one step when manufacturing a semiconductor manufacturing apparatus, silicon deposited fine particles generated after melting silicon oxide on the surface of single crystal silicon are removed by ultrasonic cleaning. If the vibration frequency when performing ultrasonic cleaning is low, the vibration due to ultrasonic waves may destroy the surface of the single crystal silicon and cause a defect on the surface of the single crystal silicon. The ultrasonic cleaning performance is enhanced by performing ultrasonic cleaning at a relatively high frequency of 0.4 MHz or more and less than 4 MHz (see, for example, Patent Document 2).
[0005]
The third prior art is a surface cleaning device for cleaning the surface of a thin plate-like body such as a liquid crystal glass substrate, and the cleaning rotary body having an adhesive surface rolls while pressing the surface of the thin plate-like body to be cleaned. By doing so, the foreign matter adhering to the surface of the thin plate-like body is adhered and removed. In the third prior art, since the thin plate-like body is stably sucked and held by the support table disposed behind, the cleaning rotary body does not press the thin plate-like body due to local load. Furthermore, the surface of the thin plate-like body can be cleaned without damaging the thin plate-like body even when the cleaning rotary body sufficiently exerts the pressing force necessary for adhering foreign substances on the thin plate-like body ( For example, see Patent Document 3).
[0006]
According to a fourth prior art, in the color image forming apparatus, when the toner attached on the transfer drum is removed, the cleaner is brought into contact with the transfer drum via the fur brush, so that the fur brush is rotationally driven. The toner adhering to the transfer drum is drawn into the cleaner body through the fur brush. The toner drawn into the cleaner body is sent along the air flow formed by the suction fan from the duct in the direction in which the filter is installed, and is collected by the filter (see, for example, Patent Document 4).
[0007]
The fifth prior art is a photoelectric device that is provided in an elevator and includes a projector and a light receiver. By ejecting air from a pipe directed to the surface of the lens of the photoelectric device, dust attached to the lens surface is removed. It is configured to be removed (see, for example, Patent Document 5).
[0008]
[Patent Document 1]
Japanese Patent Laid-Open No. 2-19831
[Patent Document 2]
JP-A-2-27717
[Patent Document 3]
JP 7-275805 A
[Patent Document 4]
JP-A-4-340979
[Patent Document 5]
Japanese Patent Laid-Open No. 10-125188
[0009]
[Problems to be solved by the invention]
The first and second prior arts have no problem when cleaning to remove fine dust such as glass pieces adhering to the protective film surface of the substrate material and silicon deposited fine particles on the surface of the single crystal silicon. When cleaning the surface of a nano thin film that is extremely poor, the nano thin film may be broken and peeled off by ultrasonic vibration. Therefore, when cleaning the surface of the nano thin film, there is a problem that the first and second conventional techniques cannot be applied. When performing ultrasonic cleaning, since the substrate material to be cleaned is immersed in a solvent, it is necessary to use a resin material that is insoluble in the solvent as the peripheral resin material constituting the substrate material. Therefore, the resin material constituting the substrate material is limited.
[0010]
The third prior art has no problem when removing fine dust attached to the surface of a thin plate-like body such as a glass substrate. However, the third prior art is used to form a nano-thin film having extremely low mechanical strength. When the surface is cleaned, the cleaning thin body having a rotating brush or an adhesive surface is in direct contact with the nano thin film surface, so that the nano thin film is easily destroyed. Therefore, there is a problem that the third conventional technique cannot be applied when cleaning the surface of the nano thin film.
[0011]
In the fourth prior art, after the toner on the transfer drum is removed with a fur brush, devices such as a suction fan, an air duct, and a filter for collecting the removed toner are separately required. Furthermore, in order to reliably capture the ultrafine toner particles, it is necessary to prepare a fine-grained filter. Therefore, there is a problem that preparation for removing the toner adhering to the transfer drum is complicated.
[0012]
In the fifth prior art, dust adhering to the lens surface is removed by blowing out air. The fifth prior art does not pose a problem when removing relatively large dust having a diameter of the order of several tens of μm, but when removing relatively small dust having a diameter of several μm or several hundreds of nm or less, The adhesion force between the dust and the nano thin film is remarkably increased with respect to the external force necessary for removing the dust. As a result, there is a problem that the dust removal efficiency is lowered.
[0013]
An object of the present invention is to provide a cleaning device and a cleaning method capable of easily cleaning the surface of a plate-like element having a nano thin film on a substrate surface without destroying the nano thin film.
[0014]
[Means for Solving the Problems]
  The present inventionMetal formed on the outermost surface of the porous silicon layerA cleaning device for cleaning the surface of a plate-like element having a nano thin film,
  A resin supply means for supplying a thermosetting resin;
  Heating means for heating and curing the thermosetting resin;
  A peeling means for peeling the thermosetting resin film cured by heating by the heating means;
  Drive means for moving the resin supply means, the heating means and the peeling means in a predetermined direction.See
  The heating temperature by the heating means is set in a range of 60 degrees Celsius or more and less than 130 degrees Celsius so that the thermosetting resin film can be cured with flexibility and elasticity. ,
  The driving means moves the peeling means in a predetermined direction after bringing the peeling means into contact with the thermosetting resin film formed on the surface of the plate-like element where the metal nano thin film is not deposited. Configured to letThis is a cleaning device.
[0015]
  According to the present invention, the resin supply means has fine dust and dust attached thereto.Metal formed on the outermost surface of the porous silicon layerA thermosetting resin is uniformly applied to the surface of the plate-like element having the nano thin film so as to have a predetermined thickness, for example, a layer thickness of about 200 μm. When the thermosetting resin is applied to the surface of the plate-like element, the resin supply means is moved in a predetermined direction by the driving means so that the thermosetting resin spreads over the entire surface of the plate-like element. After applying the thermosetting resin to the surface of the plate-like element, the thermosetting resin isRange of 60 degrees Celsius or more and less than 130 degrees CelsiusHeat with. When the thermosetting resin uniformly applied to the surface of the plate-like element is heated, the heating means is moved in a predetermined direction by the driving means so that the entire thermosetting resin is uniformly heated. After the thermosetting resin is heated by the heating means, the thermosetting resin film cured by heating is peeled off by the peeling means. When peeling the thermosetting resin film,metalThe peeling means is brought into contact with the thermosetting resin coating applied to the portion where the nano thin film is not deposited with an appropriate pressing force,afterwardsThis is performed while rotating the peeling means in a predetermined direction.
[0016]
  As described above, when the thermosetting resin is heated after the thermosetting resin is applied to the surface of the plate-like element to which fine dust and dust are adhered, the thermosetting resin is cured by the heating and is cured. Integrated with garbage and dust.In addition, the metal nano thin film is weak against the force given from the outside, and the adhesion force of the metal nano thin film deposited on the outermost surface of the porous silicon layer is very small. By setting the heating temperature when curing the thermosetting resin to a range of 60 degrees Celsius or more and less than 130 degrees Celsius, the curing of the thermosetting resin can be stopped with a hardness having flexibility and elasticity. it can.Of the thermosetting resin coating integrated with dust and dust,metalThe peeling means is brought into contact with the thermosetting resin coating applied to the portion where the nano thin film is not deposited with an appropriate pressing force, and the thermosetting resin coating is peeled off while rotating the peeling means. . As a result, the peeling means does not come into direct contact with the surface of the plate-like element.The porous silicon layerDeposited on the surfaceMetal with poor mechanical strengthDoes not damage the nano thin film. Therefore,metalDust and dust adhering to the surface of the plate-like element having a nano thin filmmetalThe nano thin film can be removed without breaking and peeling. Also, just peel off the thermosetting resin film,metalSince dust and dust attached to the surface of the plate-like element having the nano thin film can be removed, the surface of the plate-like element can be easily cleaned.
[0017]
  In the present invention, the thermosetting resin is deposited on the substrate and the surface thereof.metalRather than the bond strength with the nano thin film,metalA resin material having a low bond strength between the nano thin film and the thermosetting resin is used.
[0018]
  According to the present invention, the thermosetting resin applied to the surface of the plate-like element was deposited on the substrate and its surface.metalRather than the bond strength with the nano thin film,metalA resin material that weakens the bond strength between the nano thin film and the thermosetting resin is used. By using the thermosetting resin based on the resin material as described above, when peeling the thermosetting resin film by the peeling means,metalThe nanothin film can be prevented from being broken and peeled off, and the thermosetting resin film can be easily peeled off.
[0019]
  The present invention also providesThe resin material is polycarbonateIt is characterized by being.
  According to the present invention,By using polycarbonate as the thermosetting resin, the bond strength between the metal nano thin film and the thermosetting resin can be weakened.
[0020]
  The present invention also providesMetal formed on the outermost surface of the porous silicon layerA cleaning method for cleaning the surface of a plate-like element having a nano thin film,
  After applying a thermosetting resin to the surface of the plate-like elementIn a temperature range of 60 degrees Celsius or more and less than 130 degrees CelsiusBy heating,Cured thermoset resin coatingForm the
  After the peeling means is brought into contact with the thermosetting resin film portion on which the metal nano thin film is not deposited on the surface of the plate-like element, the peeling means is moved in a predetermined direction to form a thermosetting resin film.It is the cleaning method characterized by peeling.
[0021]
  According to the present invention, fine dust and dust are attached,Metal formed on the outermost surface of the porous silicon layerA thermosetting resin is uniformly applied to the surface of the plate-like element having the nano thin film so as to have a predetermined thickness, for example, a layer thickness of about 200 μm. After applying the thermosetting resin to the surface of the plate-like element,Temperature range from 60 degrees Celsius to less than 130 degrees CelsiusHeat with. After heating the thermosetting resin, the thermosetting resin film cured by heating is peeled off.When the thermosetting resin film is peeled off, after the peeling means is brought into contact with the portion of the plate-like element on which the metal nano thin film is not deposited, the peeling means is determined in advance. Move in the direction.
[0022]
  As described above, when the thermosetting resin is heated after the thermosetting resin is applied to the surface of the plate-like element to which fine dust and dust are adhered, the thermosetting resin is cured by the heating and is cured. Integrated with garbage and dust. The film of the thermosetting resin integrated with the dust and dust is peeled off. Thus, as in the prior art, dust and dust are not removed by directly contacting the surface of the plate-like element, for example, with a brush.The porous silicon layerDeposited on the surfacemetalDoes not damage the nano thin film. Therefore,metalDust and dust adhering to the surface of the plate-like element having a nano thin filmmetalThe nano thin film can be removed without breaking and peeling. Also, just peel off the thermosetting resin film,metalSince dust and dust attached to the surface of the plate-like element having the nano thin film can be removed, the surface of the plate-like element can be easily cleaned.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a simplified cross-sectional view showing a cleaning device 1 according to an embodiment of the present invention. When manufacturing a semiconductor device, a display device, or the like, fine dust and dust adhering to the substrate surface affects the yield and reliability of the device regardless of its size, and thus must be removed. When removing the fine dust and dust, a cleaning device 1 for cleaning a cleaning target such as a substrate surface is used.
[0024]
The cleaning device 1 includes a resin accumulation unit 2, a resin delivery pipe 3, a resin supply unit 4, a heating unit 5, a peeling reel 6 and a drive unit 7. The resin accumulation unit 2 accumulates, for example, a thermosetting resin 8 and sends the accumulated thermosetting resin 8 to the resin supply unit 4 through the resin delivery pipe 3. The resin supply unit 4 applies the thermosetting resin 8 sent from the resin storage unit 2 via the resin delivery pipe 3 to the surface of the plate-like element 9. The heating unit 5 heats the thermosetting resin 8 applied to the surface of the plate-like element 9. The peeling reel 6 is applied to the surface of the plate-like element 9 and peels off the film of the thermosetting resin 8 cured by heating. The drive unit 7 moves the resin supply unit 4, the heating unit 5, and the peeling reel 6 in a predetermined direction. In this embodiment, the resin supply part 4 is a resin supply means, and the heating part 5 is a heating means. Further, the peeling reel 6 is a peeling means, and the driving unit 7 is a driving means.
[0025]
The object to be cleaned in the present embodiment is the surface of the plate-like element 9 having the metal nano thin film 11 formed as an electrode on the outermost surface of the porous silicon (Porous Silicon) layer 10. Further, in the present embodiment, dust and dust adhering to the surface of the plate-like element 9 are, for example, fine particles having a diameter of about several μm and irregular solids having a diameter of several tens of μm or more and less than several mm.
[0026]
Porous silicon is formed by mixing a silicon substrate in a mixed solution of hydrofluoric acid and ethyl alcohol, for example, 2.5 mA / cm.²25 mA / cm²It is porous silicon formed by causing an electrolysis reaction at a current density of less than that to cause a local elution reaction. In the present embodiment, the surface of the porous silicon layer 10 formed on the plate-like element 9 is made porous and innumerable irregularities are formed.
[0027]
The metal nano thin film 11 is a metal thin layer having a layer thickness of 5 nm or more and less than 50 nm, and is formed on the surface of the porous silicon layer 10 by vapor deposition or sputtering. For example, gold and aluminum are used for the metal nano thin film 11 of the present embodiment. Since the metal nano thin film 11 is only mechanically attached to the porous silicon layer 10, it is very weak against externally applied forces. For example, the metal nano-thin film 11 is destroyed even if the cellulosic fiber wiping cloth such as Bencott (registered trademark) manufactured by Asahi Kasei Corporation is lightly touched.
[0028]
Here, the surface properties of the metal nano thin film 11 and the plate-like element 9 will be described. For example, when a gold nano thin film is formed with a thickness of 10 nm or more and less than 20 nm by vapor deposition, the surface is not microscopically uniform, but an isolated island-like lump of about 60 nm is formed. It exists. Even when this island-like lump exists, it is electrically conductive in the planar direction. When the thickness of the nano thin film is about 30 nm, the gold thin film layer is in a uniform layer state. When macroscopically evaluated, a larger undulation is present on the surface of the plate-like element 9. The surface of the plate-like element 9 has irregularities in the grain part (crystal part) of the polycrystalline silicon layer, and the height difference is not less than 100 nm and less than 200 nm. The size of one grain is about 1000 nm.
[0029]
The plate-like element 9 of the present embodiment is formed on the surface of the semiconductive substrate 12 as shown in FIG. The plate-like element 9 is realized by a polycrystalline silicon layer having a layer thickness of 1.5 μm, for example, and the semiconductive substrate 12 is realized by a single crystal silicon layer having a layer thickness of 500 μm, for example.
[0030]
The resin supply unit 4 is provided at a position facing the surface of the plate-like element 9 formed on the semiconductive substrate 12. The resin supply unit 4 is formed with a plurality of injection holes for injecting the thermosetting resin 8, for example. The resin supply unit 4 is attached to a guide unit 13 for moving the resin supply unit 4 in parallel to the surface of the plate-like element 9 and in a predetermined direction.
[0031]
In the resin supply unit 4, the thermosetting resin 8 delivered from the resin storage unit 2 through the resin delivery pipe 3 is uniformly applied to the surface of the plate-like element 9 so as to have a layer thickness of about 200 μm, for example. . Application of the thermosetting resin 8 is performed in a predetermined direction, for example, in the present embodiment, by the drive unit 7 so that the thermosetting resin 8 spreads over the entire surface of the plate-like element 9 along the guide unit 13. In the embodiment, it is performed while moving in the direction of the arrow shown in FIG.
[0032]
Application of the thermosetting resin 8 to the surface of the plate-like element 9 by the resin supply unit 4 is performed using a technique such as a thermal ink jet technique used in an ink jet printer, a technique such as dropping from an ultrathin tube and extrusion. . For example, when using a thermal ink jetting technique, the thermosetting resin 8 in the resin supply unit 4 delivered from the resin storage unit 2 via the resin delivery pipe 3 is heated by a heater to boil and bubbles are generated. Cause it to occur. And the pressure in the resin supply part 4 is increased by this bubble, and the thermosetting resin 8 is injected from an injection hole. In FIG. 1, a broken line shown from the resin supply unit 4 toward the surface of the plate-like element 9 represents the granular thermosetting resin 8 injected from the plurality of injection holes of the resin supply unit 4. After applying the thermosetting resin 8 to the surface of the plate-like element 9, the applied thermosetting resin 8 is heated by the heating unit 5.
[0033]
FIG. 2 is a view for explaining the operation when the thermosetting resin 8 applied to the surface of the plate-like element 9 is heated. The heating unit 5 is provided at a position facing the surface of the plate-like element 9 formed on the semiconductive substrate 12 so that the operation space does not overlap with the resin supply unit 4. The heating unit 5 is attached to a guide unit 13 for moving the heating unit 5 in parallel to the surface of the plate-like element 9 and in a predetermined direction.
[0034]
The heating unit 5 heats the thermosetting resin 8 applied to the surface of the plate-like element 9 at a predetermined temperature, for example, 120 degrees Celsius. The thermosetting resin 8 uniformly applied to the surface of the plate-like element 9 is heated in advance by the drive unit 7 along the guide unit 13 so that the entire thermosetting resin 8 is uniformly heated. It is performed while moving in a predetermined direction, for example, in the direction of the arrow shown in FIG.
[0035]
The heating unit 5 is realized by, for example, a heating wire, a ceramic heater, or the like, and arbitrarily controls the heating temperature of the resin within a predetermined temperature range, for example, a range of 60 degrees centigrade or more and less than 130 degrees centigrade by controlling the power applied to the heating section Can be controlled. The thermosetting resin 8 cured by heating by the heating unit 5 can be flexibly controlled by arbitrarily controlling the heating temperature of the thermosetting resin 8 in the range of 60 degrees Celsius or more and less than 130 degrees Celsius as described above. Curing can be stopped with hardness and elasticity.
[0036]
As described above, the thermosetting resin 8 applied to the surface of the plate-like element 9 is cured by heating and changes from a liquid state to a flexible and elastic state. In the process of changing from the liquid state to the state having flexibility and elasticity, the fine dust and dust adhering to the surface of the plate-like element 9 and the thermosetting resin 8 are integrated.
[0037]
After the thermosetting resin 8 is heated, it is cured from a liquid to a flexible and elastic hardness by heating, and is integrated with fine dust and dust adhering to the surface of the plate-like element 9. The film of the thermosetting resin 8 is peeled off from the surface of the plate-like element 9 by the peeling reel 6.
[0038]
FIG. 3 is a view for explaining the operation when the coating of the thermosetting resin 8 cured by heating is peeled off. 4 is an enlarged cross-sectional view of section A of FIG. The peeling reel 6 is formed in a cylindrical shape, and an adhesive layer 14 is formed on the surface thereof. The peeling reel 6 is provided at a position facing the surface of the plate element 9 so that the operation space does not overlap the resin supply unit 4 and the heating unit 5. The peeling reel 6 is attached to a guide portion 13 for moving the peeling reel 6 in parallel to the surface of the plate-like element 9 and in a predetermined direction.
[0039]
The film of the thermosetting resin 8 applied to the surface of the plate-like element 9 and cured by heating is peeled off by the peeling reel 6. When the film of the thermosetting resin 8 is peeled off by the peeling reel 6, first, the peeling reel 6 is made of the thermosetting resin 8 cured to a hardness having flexibility and elasticity by a predetermined pressure. A part of the surface of the coating is brought into contact. This contact position is a contact portion 15 between the peeling reel 6 and the thermosetting resin 8 as shown in FIG. That is, it is a coating portion of the thermosetting resin 8 applied to the surface of the plate-like element 9 on which the metal nano thin film 11 is not deposited. The film of the thermosetting resin 8 is peeled by bringing the peeling reel 6 into contact with the contact portion 15 between the peeling reel 6 and the thermosetting resin 8 with a predetermined contact pressure, and then the driving unit 7. Is performed while moving the peeling reel 6 along the guide portion 13 in a predetermined direction, for example, in the direction of the arrow shown in FIG. When the peeling reel 6 is moved as described above, the peeling reel 6 rotates, and the adhesive layer 14 formed on the surface of the peeling reel 6 winds up the film of the thermosetting resin 8, and the plate-like element. Peel from the surface of 9.
[0040]
As described above, according to the present embodiment, the thermosetting resin 8 is uniformly applied from the spray holes of the resin supply unit 4 to the surface of the plate-like element 9 having the metal nano thin film 11 to which fine dust and dust are attached. To do. When applying the thermosetting resin 8 to the surface of the plate-like element 9, the drive unit 7 moves the resin supply unit 4 in a predetermined direction so that the thermosetting resin 8 spreads over the entire surface of the plate-like element 9. While doing. After applying the thermosetting resin 8 to the surface of the plate-like element 9, the thermosetting resin 8 is heated by the heating unit 5 at a predetermined temperature, for example, 120 degrees Celsius. When heating the thermosetting resin 8 uniformly applied to the surface of the plate-like element 9, the driving unit 7 moves the heating unit 5 in a predetermined direction so that the entire thermosetting resin 8 is uniformly heated. To do. The film of the thermosetting resin 8 heated and cured by the heating unit 5 is peeled off by the peeling reel 6. When peeling the film of the thermosetting resin 8, the peeling reel is applied to the film of the thermosetting resin 8 applied to the portion of the surface of the plate-like element 9 where the metal nano thin film 11 is not deposited with an appropriate pressing force. 6 is brought into contact with the peeling reel 6 while rotating in a predetermined direction.
[0041]
As described above, when the thermosetting resin 8 is heated after the thermosetting resin 8 is applied to the surface of the plate-like element 9 to which fine dust and dust are adhered, the thermosetting resin 8 is cured by the heating and cured. In the process, the dust and dirt adhering to the surface of the plate-like element 9 are integrated. Of the coating of the thermosetting resin 8 integrated with the dust and the dust, an appropriate coating is applied to the coating of the thermosetting resin 8 applied to the portion where the metal nano thin film 11 is not deposited on the surface of the plate-like element 9. The coating of the thermosetting resin 8 is peeled while the peeling reel 6 is brought into contact with the pressing force and the peeling reel 6 is rotated. As a result, the peeling reel 6 does not directly contact the surface of the plate-like element 9, so that the metal nanothin film 11 deposited on the surface of the plate-like element 9 is not damaged.
[0042]
Therefore, dust and dust attached to the surface of the plate-like element 9 having the metal nano thin film 11 can be removed without destroying and peeling the metal nano thin film 11. In addition, dust and dust attached to the surface of the plate-like element 9 having the metal nano thin film 11 can be removed simply by peeling off the film of the thermosetting resin 8, so that the surface of the plate-like element 9 can be easily formed. Can be cleaned.
[0043]
In this embodiment, since the adhesion force of the metal nano thin film 11 deposited on the surface of the porous silicon substrate 10 is very small, dust and dust attached to the surface of the plate-like element 9 are removed without destroying the metal nano thin film 11. For this purpose, the selection of the base material of the thermosetting resin 8 to be applied to the surface of the plate-like element 9 is important. Therefore, in the present embodiment, the thermosetting resin 8 applied to the surface of the plate-like element 9 is more thermosetting than the metal nanothin film 11 than the bonding strength between the porous silicon substrate 10 and the metal nanothin film 11 deposited on the surface. A resin material that weakens the bond strength with the resin 8 is used. The thermosetting resin 8 is produced by dissolving the resin in an organic solvent. In this embodiment, for example, tetrahydrofuran (abbreviation: THF) is used as the organic solvent, and polycarbonate (abbreviation: PC) resin is used as the resin material.
[0044]
By using the thermosetting resin 8 based on the resin material as described above, the metal nano thin film 11 is destroyed and peeled when the film of the thermosetting resin 8 is peeled off by the peeling reel 6. While being able to prevent, the film of the thermosetting resin 8 can be peeled easily.
[0045]
Further, in the present embodiment, as described above, the drive unit 7 can move the resin supply unit 4, the heating unit 5, and the peeling reel 6 along the guide unit 13 in a predetermined direction. Thus, the thermosetting resin 8 was uniformly applied to the entire surface of the plate-like element 9 regardless of the area and shape of the plate-like element 9 having the metal nano-thin film 11 on the surface of the porous silicon substrate 10. The thermosetting resin 8 is heated evenly, and the coating of the thermosetting resin 8 cured by heating can be easily peeled without destroying and peeling the metal nano thin film 11.
[0046]
In addition, the drive mechanism that relatively moves the resin supply unit 4, the heating unit 5, the peeling reel 6, and the plate element 9 by the drive unit 7 is a screw that is used when the nut is linearly driven by rotating the screw, for example. Realized by a feed mechanism.
[0047]
FIG. 5 is a diagram for explaining an operation when heating the thermosetting resin 8 applied to the surface of the plate-like element 9 in another embodiment of the present invention. In the above-described embodiment, the heating of the thermosetting resin 8 applied to the surface of the plate-like element 9 is performed while the heating unit 5 is moved in the predetermined direction along the guide unit 13 by the driving unit 7. However, as another embodiment of the present invention, as shown in FIG. 5, the heating unit 5 itself may cover the entire semiconductive substrate 12 and heat the thermosetting resin 8.
[0048]
With the above-described configuration, the thermosetting resin 8 can be heated evenly regardless of the area and shape of the plate-like element 9 formed on the semiconductive substrate 12. Further, the heating unit 5 itself covers the entire semiconductive substrate 12 and heats the thermosetting resin 8, so that the thermosetting resin 8 is heated while moving the heating unit 5, compared with the case where the heating unit 5 is moved. It is possible to shorten the time required for heating the functional resin 8 to cure it to a predetermined hardness. Thereby, the time for cleaning the surface of the plate-like element 9 can be shortened.
[0049]
The above-described embodiments are merely examples of the present invention, and the configuration may be changed within the scope of the present invention. For example, operations such as application of the thermosetting resin 8 by the resin supply unit 4, heating of the thermosetting resin 8 by the heating unit 5, and peeling of the film of the thermosetting resin 8 by the peeling reel 6 are performed manually. It may be configured. In the above-described embodiment, the thermosetting resin 8 is used as the resin to be applied to the surface of the plate-like element 9, but a resin having other properties, for example, an ultraviolet curable resin that is cured by irradiation with ultraviolet rays. Alternatively, a thermoplastic resin that is softened by heating and hardened by cooling may be used.
[0050]
【The invention's effect】
  As described above, according to the present invention, when the thermosetting resin is heated after the thermosetting resin is applied to the surface of the plate-like element to which fine dust and dust are adhered, the thermosetting resin is cured by the heating. In the process of curing, it becomes integrated with dust and dirt.At this time, by setting the heating temperature for curing the thermosetting resin within a range of 60 degrees Celsius or more and less than 130 degrees Celsius, the thermosetting resin can be cured with hardness having flexibility and elasticity. Can be stopped.Of the thermosetting resin coating integrated with dust and dust,metalThe peeling means is brought into contact with the thermosetting resin coating applied to the portion where the nano thin film is not deposited with an appropriate pressing force, and the thermosetting resin coating is peeled off while rotating the peeling means. . As a result, the peeling means does not come into direct contact with the surface of the plate-like element.The porous silicon layerDeposited on the surfaceMetal with poor mechanical strengthDoes not damage the nano thin film. Therefore,metalDust and dust adhering to the surface of the plate-like element having a nano thin filmmetalThe nano thin film can be removed without breaking and peeling. Also, just peel off the thermosetting resin film,metalSince dust and dust attached to the surface of the plate-like element having the nano thin film can be removed, the surface of the plate-like element can be easily cleaned.
[0051]
  Also according to the present invention, the substrate and the surface thereof are deposited.metalRather than the bond strength with the nano thin film,metalBy using a thermosetting resin based on a resin material that weakens the bonding strength between the nano thin film and the thermosetting resin, when the thermosetting resin film is peeled off by the peeling means,metalThe nanothin film can be prevented from being broken and peeled off, and the thermosetting resin film can be easily peeled off.
[0052]
  Also according to the invention,By making the thermosetting resin polycarbonate, the bond strength between the metal nano thin film and the thermosetting resin is weakened.can do.
[0053]
  Further, according to the present invention, when the thermosetting resin is heated after applying the thermosetting resin to the surface of the plate-like element to which fine dust and dust are adhered, the thermosetting resin is cured and cured by heating. In the process, it becomes integrated with garbage and dust. The film of the thermosetting resin integrated with the dust and dust is peeled off. Thus, as in the prior art, dust and dust are not removed by directly contacting the surface of the plate-like element, for example, with a brush.The porous silicon layerDeposited on the surfacemetalDoes not damage the nano thin film. Therefore,metalDust and dust adhering to the surface of the plate-like element having a nano thin filmmetalThe nano thin film can be removed without breaking and peeling. Also, just peel off the thermosetting resin film,metalSince dust and dust attached to the surface of the plate-like element having the nano thin film can be removed, the surface of the plate-like element can be easily cleaned.
[0054]
According to the present invention, the heating means itself covers the whole plate-like element and heats the thermosetting resin, so that the thermosetting resin can be evenly distributed regardless of the area and shape of the plate-like element. Can be heated. Further, the heating means itself covers the entire plate-like element and heats the thermosetting resin, thereby heating the thermosetting resin compared to when heating the thermosetting resin while moving the heating means. The time required for curing to a predetermined hardness can be shortened. Thereby, the time for cleaning the surface of the plate-like element can be shortened.
[Brief description of the drawings]
FIG. 1 is a simplified cross-sectional view illustrating a cleaning device 1 according to an embodiment of the present invention.
FIG. 2 is a view for explaining an operation when heating a thermosetting resin 8 applied to the surface of a plate-like element 9;
FIG. 3 is a view for explaining an operation when a film of a thermosetting resin 8 cured by heating is peeled off.
4 is an enlarged cross-sectional view of section A of FIG.
FIG. 5 is a view for explaining an operation when heating a thermosetting resin 8 applied to the surface of a plate-like element 9 in another embodiment of the present invention.
[Explanation of symbols]
1 Cleaning device
2 Resin accumulation section
3 Resin delivery pipe
4 Resin supply section
5 Heating part
6 Reel for peeling
7 Drive unit
8 Thermosetting resin
9 Plate element
10 Porous silicon layer
11 Metal nano thin film
12 Semiconductive substrate
13 Guide section
14 Adhesive layer

Claims (4)

A cleaning device for cleaning the surface of a plate-like element having a metal nano thin film formed on the outermost surface of a porous silicon layer ,
A resin supply means for supplying a thermosetting resin;
Heating means for heating and curing the thermosetting resin;
A peeling means for peeling the coating of the thermosetting resin cured by heating by the heating means;
The resin supply means, viewed contains a driving means for moving to said heating means and said direction defining the peeling means in advance,
The heating temperature by the heating means is set in a range of 60 degrees Celsius or more and less than 130 degrees Celsius so that the thermosetting resin film can be cured with flexibility and elasticity. ,
The driving means moves the peeling means in a predetermined direction after bringing the peeling means into contact with the thermosetting resin film formed on the surface of the plate-like element where the metal nano thin film is not deposited. It is comprised so that it may cause. The cleaning apparatus characterized by the above-mentioned . 2. The resin material having a bond strength between the metal nano thin film and the thermosetting resin lower than the bond strength between the substrate and the metal nano thin film deposited on the surface thereof as the thermosetting resin. The cleaning device described. The cleaning apparatus according to claim 2 , wherein the resin material is polycarbonate . A cleaning method for cleaning the surface of a plate-like element having a metal nano thin film formed on the outermost surface of a porous silicon layer ,
After applying a thermosetting resin to the surface of the plate-like element , a cured thermosetting resin film is formed by heating in a temperature range of 60 degrees Celsius or more and less than 130 degrees Celsius ,
After the peeling means is brought into contact with the thermosetting resin film portion on which the metal nano thin film is not deposited on the surface of the plate-like element, the peeling means is moved in a predetermined direction to form a thermosetting resin film. A cleaning method characterized by peeling.

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