JP4133653B2 - Method for producing surface-treated inorganic filler and surface treatment method for inorganic filler - Google Patents
Method for producing surface-treated inorganic filler and surface treatment method for inorganic filler Download PDFInfo
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Description
本発明は、IC、LSI、CPU、MPU、CCDなどの半導体素子封止材用の無機充填剤の製造方法及び表面処理方法に関し、特に微細粒子を含む無機充填剤の製造方法及び表面処理方法に関する。 The present invention relates to a manufacturing method and a surface treatment method of an inorganic filler for semiconductor element sealing materials such as IC, LSI, CPU, MPU, and CCD, and more particularly to a manufacturing method and a surface treatment method of an inorganic filler containing fine particles. .
ICやLSIなどの半導体素子の封止材として、多量の無機充填剤を含有するエポキシ樹脂が信頼性の面から広範に使用されている。この種の材料には、通常、耐湿性向上を図る目的などから、表面処理された無機充填剤が使用されている。又、近年では無機充填剤の充填量を更に多くし、かつエポキシ樹脂の流動性向上を目的として、例えば粒度分布として粒径が1μm以下の微細な球状充填剤を所定の割合で含む無機充填剤を使用することが検討されている(例えば特許文献1参照)。 As a sealing material for semiconductor elements such as IC and LSI, epoxy resins containing a large amount of inorganic filler are widely used from the viewpoint of reliability. For this type of material, a surface-treated inorganic filler is usually used for the purpose of improving moisture resistance. Also, in recent years, for the purpose of further increasing the amount of the inorganic filler and improving the fluidity of the epoxy resin, for example, an inorganic filler containing a fine spherical filler having a particle size distribution of 1 μm or less as a particle size distribution in a predetermined ratio. Is being studied (see, for example, Patent Document 1).
ところで、無機充填剤の表面処理方法についてはいくつかの技術が提案されているが(例えば特許文献2参照)、上記した微細な充填剤を均一に表面処理し、かつ凝集させないで処理することは非常に困難である。このため微細な充填剤を使用する場合、表面処理を施さないのが通常であるが、表面処理を行う場合には、例えばカップリング剤等の処理剤を含む溶剤中で充填剤表面を処理した後、溶剤を留去させて表面処理された充填剤を取り出す方法が考えられる。 By the way, although several techniques are proposed about the surface treatment method of an inorganic filler (for example, refer patent document 2), the above-mentioned fine filler is uniformly surface-treated, and it is processing without agglomerating. It is very difficult. For this reason, when a fine filler is used, the surface treatment is usually not performed. However, when the surface treatment is performed, the surface of the filler is treated in a solvent containing a treatment agent such as a coupling agent. Then, the method of taking out the filler which surface-treated by distilling a solvent off can be considered.
しかしながら、この方法を用いた場合、充填剤の凝集を防止しながら溶剤を除く必要があるが、充填剤の凝集を完全に防止することは困難であり、後工程で解砕処理を行わなければならなくなる。さらに、たとえ解砕を行ったとしても充填剤の粒度を初期の値まで低下させることは不可能である。特に、この微細な充填剤がカップリング剤と一緒に凝集物を形成した場合、処理剤が加水分解などの反応によりゲル化し凝集物を固くしてしまうという問題がある。そして、この種の固い凝集物を含んだ充填剤を半導体素子の封止材に使用した場合、半導体素子の成型封止時に金型のゲートを閉塞し、未充填不良を生じさせる。
このような状況から、粒径の小さい微細な粒子を含む無機充填剤に対する表面処理方法が強く要望されていた。
However, when this method is used, it is necessary to remove the solvent while preventing the filler from agglomerating. However, it is difficult to completely prevent the filler from agglomerating, and a crushing treatment must be performed in the subsequent step. No longer. Furthermore, even if pulverization is performed, it is impossible to reduce the particle size of the filler to the initial value. In particular, when the fine filler forms an agglomerate together with the coupling agent, there is a problem that the treatment agent gels due to a reaction such as hydrolysis and hardens the agglomerate. And when the filler containing this kind of hard aggregate is used for the sealing material of a semiconductor element, the gate of a metal mold | die is obstruct | occluded at the time of molding sealing of a semiconductor element, and an unfilling defect is produced.
Under such circumstances, there has been a strong demand for a surface treatment method for inorganic fillers containing fine particles having a small particle size.
本発明は、上記の課題を解決するためになされたものであり、無機充填剤と表面処理剤とを混合した後、その混合物を粉砕して凝集をほぐすことにより、表面処理剤で均一に処理することができ、凝集のない無機充填剤の製造方法及び表面処理方法を提供することを目的とする。 The present invention has been made in order to solve the above-described problems. After mixing the inorganic filler and the surface treatment agent, the mixture is pulverized to loosen the agglomeration, thereby uniformly treating with the surface treatment agent. An object of the present invention is to provide a method for producing an inorganic filler that does not aggregate and a surface treatment method.
本発明の上記の諸目的は、シリカ及び/又はアルミナである無機充填剤と、シランカップリング剤からなる表面処理剤とを前記無機充填剤に対する前記表面処理剤の使用量が0.1〜3質量%となるようにして攪拌混合装置で混合した後、その混合物を前記攪拌混合装置と異なる連続式粉砕密閉多段ずり剪断押出機又は連続式回転ボールミルに入れ換えて室温から75℃の温度範囲で粉砕することを特徴とする表面処理された無機充填剤の製造方法によって達成された。 The above-mentioned objects of the present invention are obtained by using an inorganic filler that is silica and / or alumina and a surface treatment agent composed of a silane coupling agent so that the amount of the surface treatment agent used relative to the inorganic filler is 0.1-3. After mixing with a stirrer / mixer so as to be in mass% , the mixture is replaced with a continuous crushing closed multi-stage shear shear extruder different from the stirrer / mixer or a continuous rotating ball mill and pulverized in a temperature range from room temperature to 75 ° C. It was achieved by a method for producing a surface-treated inorganic filler characterized in that:
又、本発明の上記の諸目的は、シリカ及び/又はアルミナである無機充填剤と、シランカップリング剤からなる表面処理剤とを前記無機充填剤に対する前記表面処理剤の使用量が0.1〜3質量%となるようにして攪拌混合装置で混合した後、その混合物を前記攪拌混合装置と異なる連続式粉砕密閉多段ずり剪断押出機又は連続式回転ボールミルに入れ換えて室温から75℃の温度範囲で粉砕することを特徴とする無機充填剤の表面処理方法によって達成された。
In addition, the above-mentioned objects of the present invention are such that an inorganic filler that is silica and / or alumina and a surface treatment agent comprising a silane coupling agent are used in an amount of 0.1% of the surface treatment agent relative to the inorganic filler. After mixing with a stirrer / mixer so as to be ˜3% by mass , the mixture is replaced with a continuous pulverized closed multi-stage shear shear extruder or a continuous rotary ball mill different from the stirrer / mixer, and a temperature range from room temperature to 75 ° C. It was achieved by a surface treatment method of an inorganic filler, characterized in that it is pulverized with a surface treatment.
以上の説明で明らかなように、本発明の製造方法によれば、混合時に発生した凝集物や無機充填剤への表面処理剤の不均一な被覆を、粉砕工程によりほぼ完璧に解消することができ、均一に表面処理剤で処理され、凝集のない無機充填剤が得られる。そのため、凝集物を篩い選別する後工程が不要となって合理化にも寄与する。又、本発明で得られた無機充填剤を含有する半導体素子封止用の樹脂は溶融粘度も低く、作業性に優れたものである。また、樹脂硬化物は高湿下での強度劣化が少なく、半導体素子の信頼性向上に効果が有る。 As apparent from the above description, according to the production method of the present invention, the non-uniform coating of the surface treatment agent on the aggregates and inorganic filler generated during mixing can be almost completely eliminated by the pulverization step. Can be uniformly treated with the surface treatment agent to obtain an inorganic filler without aggregation. This eliminates the need for a post-process for screening the agglomerates and contributes to rationalization. Moreover, the resin for sealing a semiconductor element containing the inorganic filler obtained in the present invention has a low melt viscosity and an excellent workability. Further, the cured resin has little strength deterioration under high humidity and is effective in improving the reliability of the semiconductor element.
以下本発明の実施形態について説明する。
本発明で使用する無機充填剤としては。従来から公知の溶融破砕状シリカ、溶融球状シリカ、結晶シリカ、アルミナ、球状アルミナ、窒化珪素、窒化アルミなどを代表的なものとして挙げることができる。
無機充填剤の粒度分布は特に限定されるものではないが、最大粒径100μm以下で平均粒径3〜30μm程度のものを用いることができる。特に、無機充填剤中における1μm以下の平均粒径の占める割合が30%以下の粒度分布を持ったものは、本発明によって効率よく表面処理することができる。また、最近ではアンダーフィル用の無機充填剤として、平均粒径0.2〜5μmで最大粒径5μm程度のものも使用されるようになってきたが、本発明はこのような特性の無機充填剤も対象とする。そして、本発明は、上記したような大部分が微細な粒子からなる無機充填剤や、従来から使用されている充填剤を幅広く表面処理できる。
Embodiments of the present invention will be described below.
As an inorganic filler used in the present invention. Conventionally known fused crushed silica, fused spherical silica, crystalline silica, alumina, spherical alumina, silicon nitride, aluminum nitride and the like can be cited as representative examples.
The particle size distribution of the inorganic filler is not particularly limited, but those having a maximum particle size of 100 μm or less and an average particle size of about 3 to 30 μm can be used. In particular, those having a particle size distribution in which the proportion of the average particle diameter of 1 μm or less in the inorganic filler is 30% or less can be efficiently surface-treated by the present invention. Recently, inorganic fillers for underfill having an average particle size of 0.2 to 5 μm and a maximum particle size of about 5 μm have been used. Agents are also targeted. And this invention can surface-treat the inorganic filler which consists mostly of fine particles as mentioned above, and the filler currently used conventionally widely.
表面処理剤としては従来から公知のシランやカップリング剤を使用することができる。又、カップリング剤としては、例えばチタン系、アルミニウム系、クロム系、シラン系のものを使用できるがこれに限られるものではない。 Conventionally known silanes and coupling agents can be used as the surface treatment agent. As the coupling agent, for example, titanium, aluminum, chromium, and silane can be used, but the present invention is not limited thereto.
代表的なシラン(シランカップリング剤)としてはビニルトリメトキシシラン、ビニルトリエトキシシラン、2−(3,4エポキシシクロヘキシル)エチルトリメトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルメチルジエトキシシラン、3−グリシドキシプロピルトリエトキシシラン、p−スチリルメトキシシラン、3−メタクリロキシプロピルメチルジメトキシシラン、3−メタクリロキシプロピルトリメトキシシラン、3−メタクリロキシプロピルメチルジメトキシシラン、3−アクリロキシシプロピルトリメトキシシラン、N−2(アミノエチル)3−アミノプロピルメチルジメトキシシラン、N−2(アミノエチル)3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリメトキシシラン、3−トリエトキシシリル−N−(1,3−ジメチル−ブチリデン)プロピルアミン、N−フェニル−3−アミノプロピルトリメトキシシラン、3−ウレイドプロピリトリメトキシシラン、3−メルカプトプロピルトリメトキシシラン、ビス(トリエトキシシリルプロピル)テトラスルフィド、3−イソシアネート−プロピルトリエトキシシラン、などの官能性シラン(シランカップリング剤)が例示される。また、非官能性シラン(シランカップリング剤)としてはテトラメトキシシラン、テトラエトキシシラン、メチルトリメトキシシラン、ジメチルジメトキシシラン、トリメチルメトキシシシラン、ジメチルジエトキシシラン、メチルトリエトキシシラン、フェニルトリメトキシシラン、フェニルトリエトキシシラン、ヘキシルトリメトキシシランなどの有機基とアルコキシ基を持ったシランが例示される。
これらの官能性又は非官能性シラン(シランカップリング剤)を単独、または数種混合して使用してもよい。
Typical silanes (silane coupling agents) include vinyltrimethoxysilane, vinyltriethoxysilane, 2- (3,4 epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, and 3-glycid. Xylpropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styrylmethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-acryloxy propyltrimethoxysilane, N-2 (aminoethyl) 3-aminopropylmethyldimethoxysilane, N-2 (aminoethyl) 3-aminopropyltrimethoxysilane, 3-aminopropyltrimetho Silane, 3-triethoxysilyl-N- (1,3-dimethyl-butylidene) propylamine, N-phenyl-3-aminopropyltrimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, Examples include functional silanes (silane coupling agents) such as bis (triethoxysilylpropyl) tetrasulfide and 3-isocyanate-propyltriethoxysilane. Nonfunctional silanes (silane coupling agents) include tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, dimethyldiethoxysilane, methyltriethoxysilane, and phenyltrimethoxysilane. And silanes having an organic group and an alkoxy group such as phenyltriethoxysilane and hexyltrimethoxysilane.
These functional or non-functional silanes (silane coupling agents) may be used alone or in combination.
無機充填剤に対する表面処理剤の使用量は、無機充填剤の比表面積にも依存するが、通常0.1〜3重量%である。無機充填剤に単分子膜で表面処理するための表面処理剤の必要量は下記のようなモデル式を参考にすることができる。
表面処理剤の使用量(g)=充填剤の質量(g)X充填剤の比表面積(m2/g)/表面処理剤分子の最小被覆面積(m2/g)
そして、この式に基づいて計算すると、表面処理剤の使用量が0.1質量%未満であると、表面処理の程度が不充分であり無機充填剤表面を均一に処理できず、この無機充填剤を使用した半導体素子封止材は高湿条件下で強度が低下する。一方、表面処理剤の使用量が3質量%を超えると表面処理剤の量が多すぎて充填剤表面を厚く被覆することになり、やはり半導体素子封止材の高湿条件下での強度低下を招く。望ましくは、表面処理剤の使用を0.2〜2質量%とし、更に望ましくは0.3〜2質量%とする。
Although the usage-amount of the surface treating agent with respect to an inorganic filler is dependent also on the specific surface area of an inorganic filler, it is 0.1 to 3 weight% normally. The required amount of the surface treatment agent for surface treatment of the inorganic filler with a monomolecular film can be referred to the following model formula.
Use amount of surface treatment agent (g) = mass of filler (g) × specific surface area of filler (m 2 / g) / minimum coverage of surface treatment agent molecule (m 2 / g)
And when calculating based on this formula, if the amount of the surface treatment agent used is less than 0.1% by mass, the degree of surface treatment is insufficient and the surface of the inorganic filler cannot be treated uniformly, and this inorganic filling The strength of a semiconductor element sealing material using an agent is reduced under high humidity conditions. On the other hand, when the amount of the surface treatment agent used exceeds 3% by mass, the amount of the surface treatment agent is too large and the surface of the filler is thickly coated. Invite. Desirably, the use of the surface treatment agent is 0.2 to 2% by mass, and more desirably 0.3 to 2% by mass.
そして、本発明の製造方法においては、まず無機充填剤と表面処理剤とを混合する。この混合は、無機充填剤の表面全体に表面処理剤を充分に付着させるためのものであり、例えばヘンシェルミキサーなどに代表される高速攪拌装置等を用いて、攪拌混合を行うのがよい。攪拌混合に用いる装置としては、上記に限定されるものではなく、何れの装置も使用することができる。そして、好ましくは5〜60分間、攪拌混合を行うのがよい。攪拌混合時間が5分未満の場合、材料が充分に混合されず、無機充填剤の表面に表面処理剤濃度の高い部分や低い部分が生じ、表面処理が不均一となってしまう。また、攪拌混合時間が60分を超えると、表面処理剤に用いるカップリング剤の一部が加水分解して縮合反応が生じ、無機充填剤との間に強固な凝集物が発生する。このようなことから、攪拌混合はより好ましくは10〜45分、さらに望ましくは10〜30分程度行うのがよい。つまり、好ましい実施形態においては、従来のように混合を過度に行わず、いわば予備混合に留める。 And in the manufacturing method of this invention, an inorganic filler and a surface treating agent are mixed first. This mixing is for sufficiently adhering the surface treatment agent to the entire surface of the inorganic filler. For example, it is preferable to perform stirring and mixing using a high-speed stirring device such as a Henschel mixer. The apparatus used for stirring and mixing is not limited to the above, and any apparatus can be used. And it is good to stir-mix preferably for 5 to 60 minutes. When the stirring and mixing time is less than 5 minutes, the material is not sufficiently mixed, and the surface of the inorganic filler has portions with a high or low surface treatment agent concentration, resulting in uneven surface treatment. When the stirring and mixing time exceeds 60 minutes, a part of the coupling agent used for the surface treatment agent is hydrolyzed to cause a condensation reaction, and a strong aggregate is generated between the inorganic filler and the inorganic filler. For this reason, stirring and mixing is more preferably performed for 10 to 45 minutes, and more desirably for about 10 to 30 minutes. That is, in a preferred embodiment, the mixing is not excessively performed as in the prior art, and so to speak, the preliminary mixing is limited.
なお、高速攪拌装置を用いて混合する具体的方法としては、無機充填剤を装置に入れて攪拌しながら、スプレーなどを用いて表面処理剤を無機充填剤に塗布したり、スプレーを用いずに表面処理剤を直接混合装置に添加すればよい。表面処理剤は、あらかじめ水を加え一部加水分解した状態で使用してもよい。特に、表面処理剤が乾燥した状態では加水分解反応が遅くなることから、予め若干の水分を無機充填剤に添加した後、混合を行った方が好ましい。 In addition, as a specific method of mixing using a high-speed stirrer, a surface treatment agent may be applied to the inorganic filler using a spray or the like while stirring the inorganic filler in the device, or without using a spray. What is necessary is just to add a surface treating agent directly to a mixing apparatus. You may use a surface treating agent in the state which added water beforehand and was partially hydrolyzed. In particular, since the hydrolysis reaction becomes slow when the surface treatment agent is dried, it is preferable to add some water in advance to the inorganic filler and then perform mixing.
次に、混合物を連続式粉砕装置を用いて粉砕する。この粉砕工程は、凝集物を粉砕して初期の平均粒径を持った表面処理済無機充填剤を得るためのものであり、又、粉砕工程において表面処理剤の無機充填剤表面への被覆をも行う。つまり、本発明の好ましい実施形態においては、従来のように混合工程で過度の混合による過度の表面処理を行わず、いわば予備混合を行うに留め、次の粉砕工程で(予備)混合時に生成した無機充填剤の凝集物を粉砕し、また無機充填剤の粗粒を粉砕しながら表面処理を同時に進行させるところに特徴がある。このようにすると、混合工程で凝集が顕著に生じず、又、生じた凝集は粉砕工程で除去でき、さらに、混合工程と粉砕工程で順次表面処理を進行させることができる。連続式粉砕装置は衝撃エネルギーが大きすぎないので、表面処理剤が衝撃力により酸化するのを防止できる利点がある。 Next, the mixture is pulverized using a continuous pulverizer. This pulverization step is for obtaining a surface-treated inorganic filler having an initial average particle diameter by pulverizing the aggregate, and in the pulverization step, the surface treatment agent is coated on the surface of the inorganic filler. Also do. In other words, in the preferred embodiment of the present invention, excessive surface treatment by excessive mixing is not performed in the mixing step as in the prior art, so to speak, only preliminary mixing is performed, and it is generated during (preliminary) mixing in the next pulverization step. It is characterized in that the surface treatment proceeds simultaneously while pulverizing the aggregate of the inorganic filler and pulverizing the coarse particles of the inorganic filler. In this way, the aggregation does not remarkably occur in the mixing step, and the generated aggregation can be removed in the pulverization step, and the surface treatment can be sequentially advanced in the mixing step and the pulverization step. Since the continuous pulverizer does not have too much impact energy, there is an advantage that the surface treatment agent can be prevented from being oxidized by the impact force.
具体的には、連続式粉砕密閉多段ずり剪断押出機や連続式回転ボールミルを用いるのが好ましい。バッチ式回転ボールミルやジェットミルなどの場合、衝撃エネルギーが過大であり、表面処理剤が衝撃力により酸化劣化し、有害な有機酸を発生するので好ましくない。つまり、例えば連続式回転ボールミルとバッチ式回転ボールミルとを比較すると、前者の場合は短時間で粉砕と表面処理を(同時に)行うことができるのに対し、後者の場合は前者と同様な特性の粉末を得ようとすると、処理時間が非常に長くなる。通常、連続式回転ボールミルでは装置内での材料の滞留時間が3〜15分程度であるのに対し、バッチ式回転ボールミルの場合、滞留時間が2〜10時間である。 Specifically, it is preferable to use a continuous pulverized closed multi-stage shear shear extruder or a continuous rotary ball mill. In the case of a batch-type rotating ball mill or jet mill, impact energy is excessive, and the surface treatment agent is oxidized and deteriorated by impact force to generate harmful organic acids. That is, for example, when comparing a continuous rotary ball mill and a batch rotary ball mill, the former can perform grinding and surface treatment in a short time (simultaneously), whereas the latter has the same characteristics as the former. When trying to obtain a powder, the processing time becomes very long. Usually, the residence time of the material in the apparatus is about 3 to 15 minutes in the continuous rotary ball mill, whereas the residence time is 2 to 10 hours in the case of the batch type rotary ball mill.
又、連続式回転ボールミルの場合、装置内のボール径は約5mm以下であるが、バッチ式回転ボールミルのボール径は20〜100mm程度であり、その分だけボール同士の衝突による衝撃エネルギが過大となる。さらに、連続式回転ボールミルの場合は装置外部から冷却しながら処理が行え、ミル内の温度制御が行えるのに対し、バッチ式回転ボールミルでは通常は冷却ができず、ミル内温度は100℃近くまで上昇する。以上のように、衝撃エネルギが小さく、処理時間も短く、又、処理温度が比較的低温(例えば常温)で済むので、連続式回転ボールミルでは表面処理剤の衝撃力による酸化劣化、及び有機酸の発生を防止できる。 In the case of a continuous rotating ball mill, the ball diameter in the apparatus is about 5 mm or less, but the ball diameter of the batch rotating ball mill is about 20 to 100 mm, and the impact energy due to the collision between the balls is excessive accordingly. Become. Furthermore, in the case of a continuous rotating ball mill, processing can be performed while cooling from the outside of the apparatus, and the temperature in the mill can be controlled. On the other hand, in a batch rotating ball mill, cooling is not normally possible, and the temperature in the mill is close to 100 ° C. To rise. As described above, the impact energy is small, the treatment time is short, and the treatment temperature is relatively low (for example, room temperature). Therefore, in a continuous rotating ball mill, oxidation degradation due to the impact force of the surface treatment agent, and organic acid Occurrence can be prevented.
特に、連続式回転ボールミルを用いると、上記酸化を防止するとともに均一に無機充填剤表面に表面処理剤(特にシラン)を被覆させることができる。 In particular, when a continuous rotating ball mill is used, the surface treatment agent (particularly silane) can be uniformly coated on the surface of the inorganic filler while preventing the oxidation.
表面処理を所望の処理温度で確実かつ最適な条件で進行させるため、連続式粉砕装置は加熱機構や冷却機構を備えたものが望ましい。通常、表面処理剤と無機充填剤表面との反応を確実にさせるため、粉砕工程での処理温度は室温以上、望ましくは室温から150℃の温度範囲とするのが好ましい。 In order to allow the surface treatment to proceed at a desired treatment temperature under reliable and optimum conditions, it is desirable that the continuous pulverizer has a heating mechanism and a cooling mechanism. In general, in order to ensure the reaction between the surface treatment agent and the surface of the inorganic filler, the treatment temperature in the pulverization step is preferably room temperature or higher, desirably from room temperature to 150 ° C.
以下、本発明を実施例、比較例に基づいて具体的に説明するが、本発明はそれらによって限定されるものではない。又、特にことわらない限り、%、部はそれぞれ重量%、重量部を示す。
A.実験例1(無機充填剤の表面処理)
EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example and a comparative example, this invention is not limited by them. Further, unless otherwise specified,% and part represent% by weight and part by weight, respectively.
A. Experimental Example 1 (Surface treatment of inorganic filler)
スプレーノズルを備えたヘンシェルミキサー(容量200リットル)に無機充填剤として平均粒径8μmで最大粒径50μm、1μm以下の粒子の含有量が20%である球状シリカを100kg入れ、回転数1000rpmで混合しながら、表面処理剤として3−グリシドキシプロピルトリメトキシシラン1.5kgをスプレーノズルから噴霧しながら球状シリカ表面に塗布した。塗布後、混合を10分間行った後、ヘンシェルミキサーから混合物を取り出した。
次いで、取り出した混合物を連続式回転ボールミル(三井鉱山(株)製ダイナミックミルMYD25、スクリュ−回転数500rpm、ボール径5mm、吐出量150kg/時間)に投入し、材料温度を75℃に保ちながら粉砕を行い、同時に表面処理を行った。ミルからの吐出物を冷却して表面処理シリカAを得た。ミル内での混合物の滞留時間は10分程度であった。
In a Henschel mixer (200 liters) equipped with a spray nozzle, 100 kg of spherical silica with an average particle size of 8 μm and a maximum particle size of 50 μm and a content of 20% or less is 20% as an inorganic filler, and mixed at a rotation speed of 1000 rpm Then, 1.5 kg of 3-glycidoxypropyltrimethoxysilane as a surface treatment agent was applied to the spherical silica surface while spraying from a spray nozzle. After coating, mixing was performed for 10 minutes, and then the mixture was taken out of the Henschel mixer.
Next, the taken mixture is put into a continuous rotating ball mill (dynamic mill MYD25 manufactured by Mitsui Mining Co., Ltd., screw rotation speed 500 rpm, ball diameter 5 mm, discharge amount 150 kg / hour), and pulverized while keeping the material temperature at 75 ° C. At the same time, surface treatment was performed. The discharge from the mill was cooled to obtain surface-treated silica A. The residence time of the mixture in the mill was about 10 minutes.
無機充填剤として平均粒径0.5μmで最大粒径5μmの球状シリカ100kgを用い、表面処理剤として3−グリシドキシプロピルトリメトキシシラン2.5kgを用いたことの他は、実施例1と同一のヘンシェルミキサー及びミルを用い、同一の条件で混合及び粉砕を行い、表面処理シリカBを得た。 Example 1 except that 100 kg of spherical silica having an average particle size of 0.5 μm and a maximum particle size of 5 μm was used as the inorganic filler, and 2.5 kg of 3-glycidoxypropyltrimethoxysilane was used as the surface treatment agent. Using the same Henschel mixer and mill, mixing and pulverization were performed under the same conditions to obtain surface-treated silica B.
表面処理剤として3−グリシドキシプロピルトリメトキシシラン1.5kgを予め純水0.1kgと反応させて一部加水分解させたものを用いたことの他は、実施例1と同一の混合条件で混合した。混合物を、密閉多段ずり剪断押出機((株)ケイ・シ・ケイ製KCK80X2V、回転ブレードφ80,ブレード枚数4組、ブレード回転数300rpm、吐出量30Kg/時間)を用いて材料温度を65℃に保ちながら粉砕し、表面処理シリカCを得た。密閉多段ずり剪断押出機内での混合物の滞留時間は15分程度であった。 The same mixing conditions as in Example 1 except that 1.5 kg of 3-glycidoxypropyltrimethoxysilane was previously reacted with 0.1 kg of pure water and partially hydrolyzed as the surface treatment agent. Mixed. The mixture was subjected to a material temperature of 65 ° C. using a closed multi-stage shear shear extruder (KCK80X2V, manufactured by KSH Co., Ltd., rotating blade φ80, number of blades 4 sets, blade rotation speed 300 rpm, discharge rate 30 kg / hour). While maintaining, pulverization was performed to obtain surface-treated silica C. The residence time of the mixture in the closed multi-stage shear shear extruder was about 15 minutes.
表面処理剤として3−アミノプロピルトリメトキシシラン1.5kgを用いたことの他は、実施例1と同一のヘンシェルミキサー及びミルを用い、同一の条件で混合及び粉砕を行い、表面処理シリカDを得た。 Aside from using 1.5 kg of 3-aminopropyltrimethoxysilane as a surface treatment agent, the same Henschel mixer and mill as in Example 1 were used, and mixing and pulverization were performed under the same conditions to obtain surface-treated silica D. Obtained.
比較例1
混合を20分間行ったことと、粉砕処理入りを行わなかったことの他は、実施例1と同一の条件で混合を行い、表面処理シリカEを得た。
比較例2
無機充填剤として平均粒径0.5μmで最大粒径5μmの球状シリカを100kg用い、表面処理剤として3−グリシドキシプロピルトリメトキシシラン2.5kgを用い、混合を20分間行ったことと、粉砕処理入りを行わなかったことの他は、実施例1と同一の条件で混合を行い、表面処理シリカFを得た。
比較例3
粉砕工程において、上記連続式回転ボールミルの代わりに、バッチ式回転ボールミル(容量100リットル)を用い、ミル内に25mm径のアルミナボール50kgと、混合物50kgを入れて粉砕を4時間行い、表面処理シリカGを得た。ミルから表面処理シリカを排出する際の表面処理シリカの温度は85℃であった。
Comparative Example 1
A surface-treated silica E was obtained by performing the mixing under the same conditions as in Example 1 except that the mixing was performed for 20 minutes and the grinding treatment was not performed.
Comparative Example 2
100 kg of spherical silica having an average particle size of 0.5 μm and a maximum particle size of 5 μm was used as the inorganic filler, and 2.5 kg of 3-glycidoxypropyltrimethoxysilane was used as the surface treatment agent, and mixing was performed for 20 minutes, Except that the grinding treatment was not performed, mixing was performed under the same conditions as in Example 1 to obtain surface-treated silica F.
Comparative Example 3
In the pulverization process, instead of the continuous rotary ball mill, a batch rotary ball mill (capacity: 100 liters) is used, and 50 kg of 25 mm diameter alumina balls and 50 kg of the mixture are put into the mill and pulverized for 4 hours. G was obtained. The temperature of the surface-treated silica when discharging the surface-treated silica from the mill was 85 ° C.
表面処理シリカの評価
次に以下の方法により、表面処理シリカの各種評価を行った。
1.粗粒(凝集物含む)の量
表面処理前後のシリカを100g秤量し、300メッシュの篩いを使用して水篩いで分級した。分級後、篩い上に残留したシリカを乾燥し重量を測定することで粗粒の量とした。粗粒の量が多いほど、凝集が生じていることを示す。
2.平均粒径
表面処理前後のシリカの粒度分布をシーラスレーザー測定装置を用い測定した。表面処理後に平均粒径が高くなるほど、凝集が生じていることを示す。
3.抽出水伝導度
表面処理シリカ5gを純水50gの入った耐圧容器に入れ、120℃で20時間水を抽出した。シリカを遠心分離器で分離した後、抽出水の電気伝導度を測定した。電気伝導度が高いほど、表面処理剤であるシランカップリング剤が酸化して有機酸が生じ、表面処理の効果が劣化していることを示す。
表1に各表面処理シリカの評価結果を示す。
Evaluation of surface-treated silica Next, various evaluations of surface-treated silica were performed by the following methods.
1. Amount of coarse particles (including agglomerates) 100 g of silica before and after the surface treatment was weighed and classified with a water sieve using a 300 mesh sieve. After classification, the silica remaining on the sieve was dried and the weight was measured to obtain the amount of coarse particles. The larger the amount of coarse particles, the more agglomeration occurs.
2. Average Particle Size The silica particle size distribution before and after the surface treatment was measured using a cirrus laser measuring device. The higher the average particle size after the surface treatment, the more agglomeration occurs.
3. Extraction water conductivity 5 g of surface-treated silica was put in a pressure vessel containing 50 g of pure water, and water was extracted at 120 ° C. for 20 hours. After separating the silica with a centrifuge, the electrical conductivity of the extracted water was measured. The higher the electric conductivity, the more the silane coupling agent, which is a surface treatment agent, is oxidized to produce an organic acid, and the effect of the surface treatment is degraded.
Table 1 shows the evaluation results of each surface-treated silica.
表1から明らかなように、実施例1〜4の場合、混合と粉砕を経た後の表面処理シリカは凝集物がまったく生じなかったとともに、平均粒径も増大しなかった。これより、もとの球状シリカ、あるいは混合時に発生した凝集物が連続式回転ボールミルによる粉砕によってほぼ完璧に解消したことがわかる。又、球状シリカへのシランの不均一な被覆も粉砕によって均一化していると考えられる。例えば、製造時に粒子同士が融着し瓢箪のような形状になったものも球状シリカの材料に含まれるが、連続式回転ボールミルによって単一粒子に粉砕されながら表面処理される。そのため、表面処理後において無機充填剤粒子の凝集物や無機充填剤同士が融着した大粒子もほとんど存在しなかった。 As is clear from Table 1, in the case of Examples 1 to 4, the surface-treated silica after the mixing and pulverization did not produce any aggregates, and the average particle diameter did not increase. From this, it can be seen that the original spherical silica or agglomerates generated during mixing were almost completely eliminated by pulverization by a continuous rotary ball mill. Further, it is considered that the non-uniform coating of silane on the spherical silica is made uniform by pulverization. For example, the spherical silica material also includes particles in which the particles are fused at the time of manufacture to form a wrinkle, but is surface-treated while being pulverized into single particles by a continuous rotary ball mill. Therefore, after the surface treatment, there were almost no aggregates of inorganic filler particles and large particles in which the inorganic fillers were fused together.
なお、実施例1、3、4においては、平均粒径が10μm未満の無機充填剤に対して凝集を生じずに表面処理を行えることが判明した。又、実施例1、3、4においては粒径1μm以下の微粒子を含む無機充填剤を用いたが、この場合に表面処理後に平均粒径が増大しなかったことから、粒径1μm以下の微粒子に対しても凝集を生じずに表面処理を行えることが判明した。同様に、実施例2においては、平均粒径が0.5μmの無機充填剤に対して凝集を生じずに表面処理を行えることが判明した。 In Examples 1, 3, and 4, it was found that the surface treatment can be performed without causing aggregation on an inorganic filler having an average particle size of less than 10 μm. In Examples 1, 3, and 4, an inorganic filler containing fine particles having a particle size of 1 μm or less was used. In this case, since the average particle size did not increase after the surface treatment, fine particles having a particle size of 1 μm or less. It was also found that surface treatment can be performed without causing aggregation. Similarly, in Example 2, it was found that surface treatment can be performed without causing aggregation on an inorganic filler having an average particle diameter of 0.5 μm.
一方、比較例1、2の場合、連続式粉砕装置を用いた粉砕処理を行わなかったため、表面処理後に凝集物が多量に生じたとともに、平均粒径も増大した。又、比較例3の場合、バッチ式粉砕装置を用いて粉砕処理を行ったため、抽出水伝導度が上昇して有機酸が生成した。このことより、バッチ式粉砕装置を用いると表面処理剤であるシランの酸化劣化を生じることがわかった。 On the other hand, in Comparative Examples 1 and 2, since the pulverization process using the continuous pulverizer was not performed, a large amount of agglomerates were generated after the surface treatment, and the average particle diameter was increased. Moreover, in the case of the comparative example 3, since the grinding | pulverization process was performed using the batch-type grinding | pulverization apparatus, the extraction water conductivity raised and the organic acid produced | generated. From this, it was found that when a batch type pulverizer is used, oxidative degradation of silane as a surface treatment agent occurs.
B.実験例2(無機充填剤を含む半導体素子封止用樹脂組成物の作製) B. Experimental Example 2 (Preparation of a resin composition for sealing a semiconductor element containing an inorganic filler)
ビフェニルアラルキル型エポキシ樹脂(NC3000P:日本化薬(株)製)59.6部、ビフェニルアラルキル型フェノール樹脂(MEH7851:明和化成(株)製)38.4部、触媒としてトリフェニルホスフィン1.2部、カーボンブラック2部、γ−グリシドキシプロピルトリメトキシシラン1.5部、カルナバワックス0.15部、実験例1で作製した表面処理シリカAを800部配合し、熱二本ロールにて均一に溶融混合し、これを冷却、粉砕して半導体素子封止用樹脂組成物を得た。 59.6 parts of biphenyl aralkyl type epoxy resin (NC3000P: manufactured by Nippon Kayaku Co., Ltd.), 38.4 parts of biphenyl aralkyl type phenol resin (MEH7851: manufactured by Meiwa Kasei Co., Ltd.), 1.2 parts of triphenylphosphine as a catalyst , 2 parts of carbon black, 1.5 parts of γ-glycidoxypropyltrimethoxysilane, 0.15 parts of carnauba wax, 800 parts of the surface-treated silica A prepared in Experimental Example 1, and evenly mixed with two heat rolls Then, this was cooled and pulverized to obtain a resin composition for encapsulating a semiconductor element.
樹脂組成物に配合する表面処理シリカとして表面処理シリカCを用いたことの他は、実施例5とまったく同一の条件で半導体素子封止用樹脂組成物を作製した。 A resin composition for encapsulating a semiconductor element was produced under exactly the same conditions as in Example 5, except that the surface-treated silica C was used as the surface-treated silica to be blended in the resin composition.
樹脂組成物に配合する表面処理シリカとして表面処理シリカDを用いたことの他は、実施例5とまったく同一の条件で半導体素子封止用樹脂組成物を作製した。 A resin composition for encapsulating a semiconductor element was produced under exactly the same conditions as in Example 5 except that the surface-treated silica D was used as the surface-treated silica to be blended in the resin composition.
比較例4,5
樹脂組成物に配合する表面処理シリカとして、それぞれ表面処理シリカE、Gを用いたことの他は、実施例5とまったく同一の条件で半導体素子封止用樹脂組成物を作製し、それぞれ比較例4、5とした。
Comparative Examples 4 and 5
A resin composition for encapsulating a semiconductor element was prepared under the same conditions as in Example 5 except that the surface-treated silicas E and G were used as the surface-treated silica to be blended in the resin composition, respectively. 4 and 5.
得られた樹脂組成物について、以下の評価を行った。
1)スパイラルフロー
樹脂組成物を粉砕した粉末を試料として用い、スパイラルフロー測定金型を使用しスパイラルフローを測定した。測定条件は、金型温度175℃、圧力6.86MPa、成型時間90秒、とした。
2)溶融粘度
高化式フローテスターを用い、樹脂組成物について、測定温度175℃、ノズル径1mm、加圧力0.98MPa
JIS K6911に準じた方法で測定した。
4)曲げ強さ(PCT100Hr)
JIS K6911に記載された形状の試験片を作成した後、ポストキュアした試験片を高温高湿条件であるPCT(プレッシャークッカテスト:121℃,100%RH,0.213MPa)に供し、この条件で100時間放置した。この処理後、JIS K6911に準じた方法で測定した。
5)ゲート詰まり、内部ボイドの有無
ゲート寸法が150x100μmであるTQFPパッケージ20個を、樹脂組成物によってトランスファー成型して封止した。トランスファー成型は、175℃、圧力6.86MPa、の圧力で行った。封止後のパッケージについて、未充填(ゲート詰まり)の有無を目視観察し、また軟X線で観察した際のボイドの有無を調査した。
6)アルミ電極腐食
アルミニウム金属電極の腐食を評価するために設計した素子を14ピンICに搭載し、各組成物によって上記条件でトランスファー成型して封止した。封止したパッケージを125℃、湿度85%の高圧釜内で15Vのバイアス電圧をかけて100時間放置し、電極の腐食を調べた。
得られた結果を表2に示す。
The following evaluation was performed about the obtained resin composition.
1) Spiral flow Spiral flow was measured by using a powder obtained by pulverizing the resin composition as a sample and using a spiral flow measurement mold. The measurement conditions were a mold temperature of 175 ° C., a pressure of 6.86 MPa, and a molding time of 90 seconds.
2) Melt viscosity Using a Koka flow tester, the resin composition was measured at a measurement temperature of 175 ° C, a nozzle diameter of 1 mm, and a pressure of 0.98 MPa.
Measurement was performed by a method according to JIS K6911.
4) Bending strength (PCT100Hr)
After preparing a test piece having the shape described in JIS K6911, the post-cured test piece was subjected to PCT (pressure cooker test: 121 ° C., 100% RH, 0.213 MPa) under a high temperature and high humidity condition. Left for 100 hours. After this treatment, measurement was performed by a method according to JIS K6911.
5) Gate clogging, presence or absence of internal voids 20 TQFP packages with a gate size of 150 × 100 μm were transfer molded with a resin composition and sealed. Transfer molding was performed at a pressure of 175 ° C. and a pressure of 6.86 MPa. About the package after sealing, the presence or absence of unfilling (gate clogging) was visually observed, and the presence or absence of voids when observed with soft X-rays was investigated.
6) Aluminum electrode corrosion An element designed for evaluating corrosion of an aluminum metal electrode was mounted on a 14-pin IC, and was molded by transfer molding under the above conditions with each composition and sealed. The sealed package was allowed to stand for 100 hours in a high-pressure oven at 125 ° C. and 85% humidity with a bias voltage of 15 V, and the corrosion of the electrodes was examined.
The obtained results are shown in Table 2.
表2から明らかなように、実施例5〜7の場合、樹脂組成物の曲げ強さが高温高湿条件下でも低下せず、又、ゲート詰まり、内部ボイド、アルミ電極腐食がまったくなく、素子としての不良率が0%であった。一方、比較例4の場合、凝集を生じた表面処理シリカEを用いたため、高温高湿条件下による曲げ強さの低下が顕著となり、又、ゲート詰まり、内部ボイド、アルミ電極腐食が顕著となった。このことから、凝集を生じた表面処理シリカを樹脂組成物に用いると、耐湿性が劣化することがわかった。又、比較例5の場合、凝集は見られないがシランカップリング剤が酸化劣化した表面処理シリカGを用いたため、ゲート詰まりや内部ボイドは生じなかったものの、アルミ電極腐食を防止できず、耐湿性が大幅に劣化することがわかった。 As is apparent from Table 2, in Examples 5 to 7, the bending strength of the resin composition does not decrease even under high temperature and high humidity conditions, and there is no gate clogging, internal voids, and aluminum electrode corrosion at all. As a result, the defect rate was 0%. On the other hand, in the case of Comparative Example 4, since the surface-treated silica E that has agglomerated is used, the bending strength is significantly reduced under high temperature and high humidity conditions, and gate clogging, internal voids, and aluminum electrode corrosion become significant. It was. From this, it was found that when the surface-treated silica having agglomerated is used for the resin composition, the moisture resistance is deteriorated. Further, in the case of Comparative Example 5, although the aggregation was not observed but the surface-treated silica G in which the silane coupling agent was oxidized and deteriorated was used, the gate clogging and the internal void did not occur, but the aluminum electrode corrosion could not be prevented and the moisture resistance It was found that the characteristics deteriorated significantly.
C.実験例3(無機充填剤を含む半導体素子封止用樹脂組成物の作製その2) C. Experimental Example 3 (Preparation of a resin composition for sealing a semiconductor element containing an inorganic filler, part 2)
ビスフェノールF型エポキシ樹脂(RE303S−L:日本化薬(株)製)55部、メチルテトラヒドロ無水フタルサン(MH700:新日本理化(株)製)15部、3,4−ジメチル−6−(2−メチル−1−プロペニル)−1,2,3,6−テトラヒドロフタル酸及び1−イソプロピル−4−メチル−ビシクロ(2.2.2)オクト−5−エン−2,3−ジカルボン酸の混合物(混合比率=6:4)(YH307:ジャパンエポキシレジン(株))30部、実験例1で作製した表面処理シリカBを130部、硬化触媒としてキュアゾールC11Z−PW(2−ウンデシルイミダゾール:四国化成(株)製)0.4部を3本ロールで均一に混練することで液状のエポキシ樹脂組成物を作成した。 55 parts of bisphenol F type epoxy resin (RE303S-L: manufactured by Nippon Kayaku Co., Ltd.), 15 parts of methyltetrahydroanhydrophthalic acid (MH700: manufactured by Shin Nippon Rika Co., Ltd.), 3,4-dimethyl-6- (2- A mixture of methyl-1-propenyl) -1,2,3,6-tetrahydrophthalic acid and 1-isopropyl-4-methyl-bicyclo (2.2.2) oct-5-ene-2,3-dicarboxylic acid ( Mixing ratio = 6: 4) (YH307: Japan Epoxy Resin Co., Ltd.) 30 parts, 130 parts of the surface-treated silica B prepared in Experimental Example 1, Curazole C11Z-PW (2-undecylimidazole: Shikoku Chemicals) as a curing catalyst A liquid epoxy resin composition was prepared by uniformly kneading 0.4 parts with three rolls.
比較例6
樹脂組成物に配合する表面処理シリカとして表面処理シリカFを用いたことの他は、実施例8とまったく同一の条件で半導体素子封止用樹脂組成物を作製した。
Comparative Example 6
A resin composition for encapsulating a semiconductor element was produced under exactly the same conditions as in Example 8, except that the surface-treated silica F was used as the surface-treated silica to be blended in the resin composition.
得られた各樹脂組成物について、以下の評価を行った。
1)接着力試験
各樹脂組成物について円錐台形状の試験片(上面の直径2mm、下面の直径5mm、高さ3mm)を成型した。そして、この試験片を、感光性ポリイミドをコートしたシリコンチップ上に載せ、150℃で3時間保持してポリイミドを硬化させた。硬化後、得られた試験片の剪断接着力を測定し初期値とした。更に、硬化させた試験片を上記PCT条件下で168時間保持し、吸湿させた後の接着力を測定した。試験片の個数は5個で行い、その平均値を接着力とした。
2)侵入性試験
フリップチップ(チップサイズ:10mmx10mmx0.3mm、バンプ径120μm、バンプ高さ75μm、バンプピッチ200μm)を100℃の熱版上に置き、チップの一辺に各樹脂組成物を塗布した後5分間放置し、超音波探傷装置を用いてチップ下部への樹脂の侵入性を検査することで、未充填発生チップの有無を調べ、未充填発生チップ数/総チップ数を算出した。この侵入性試験は、フリップチップ型半導体素子のアンダーフィル材(半導体素子の下部と有機基板とをバンプを介して封止する際、この素子と基板との間の間隙(ギャップ)を封止するための封止剤)として半導体素子封止用エポキシ樹脂組成物を用いた際の、充填性(キャピラリフローによる侵入性)を評価するものである。
得られた結果を表3に示す。
The following evaluation was performed about each obtained resin composition.
1) Adhesive strength test For each resin composition, a truncated cone-shaped test piece (upper surface diameter 2 mm, lower surface diameter 5 mm, height 3 mm) was molded. The test piece was placed on a silicon chip coated with photosensitive polyimide and held at 150 ° C. for 3 hours to cure the polyimide. After curing, the shear strength of the obtained specimen was measured and used as the initial value. Further, the cured test piece was held for 168 hours under the PCT conditions, and the adhesive strength after moisture absorption was measured. The number of test pieces was five, and the average value was defined as the adhesive strength.
2) Penetration test After flip chip (chip size: 10 mm × 10 mm × 0.3 mm, bump diameter 120 μm, bump height 75 μm, bump pitch 200 μm) is placed on a hot plate at 100 ° C., each resin composition is applied to one side of the chip The sample was left for 5 minutes, and the presence of unfilled chips was examined by examining the penetration of the resin into the lower part of the chip using an ultrasonic flaw detector, and the number of unfilled chips / total number of chips was calculated. This penetration test is performed by sealing an underfill material of a flip chip type semiconductor element (a gap (gap) between the element and the substrate when the lower part of the semiconductor element and the organic substrate are sealed with bumps). In this case, the filling property (penetration by capillary flow) is evaluated when the epoxy resin composition for sealing a semiconductor element is used as a sealing agent for sealing.
The obtained results are shown in Table 3.
表3から明らかなように、実施例8の場合、高温高湿条件下による接着性の低下はほとんどなく、又、侵入性試験も良好であった。一方、連続式粉砕装置を用いずに凝集物が多量に生じた表面処理シリカFを用いた比較例6の場合、表面処理工程で凝集が生じ、又処理が均一に行われなかったため、高温高湿条件下による接着性の低下が顕著となった。又、侵入性試験の結果が悪く、樹脂組成物の充填性に劣った。
As is apparent from Table 3, in Example 8, there was almost no decrease in adhesiveness under high temperature and high humidity conditions, and the penetration test was also good. On the other hand, in the case of Comparative Example 6 using the surface-treated silica F in which a large amount of agglomerate was generated without using a continuous pulverizer, agglomeration occurred in the surface treatment process and the treatment was not performed uniformly. The decrease in adhesiveness under wet conditions became remarkable. Moreover, the result of the penetration test was bad and the filling property of the resin composition was poor.
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