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JP4136097B2 - Low noise coaxial cable and manufacturing method thereof - Google Patents
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JP4136097B2 - Low noise coaxial cable and manufacturing method thereof - Google Patents

Low noise coaxial cable and manufacturing method thereof Download PDF

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Publication number
JP4136097B2
JP4136097B2 JP21648498A JP21648498A JP4136097B2 JP 4136097 B2 JP4136097 B2 JP 4136097B2 JP 21648498 A JP21648498 A JP 21648498A JP 21648498 A JP21648498 A JP 21648498A JP 4136097 B2 JP4136097 B2 JP 4136097B2
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Prior art keywords
layer
semiconductive
coaxial cable
around
dielectric layer
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JP2000030548A (en
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重二 秋葉
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Junkosha Co Ltd
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Junkosha Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、低雑音同軸ケ−ブルおよびその製造方法に係わり、特に良好な可撓性を有すると共に、端末処理が容易な低雑音同軸ケ−ブルおよびその製造方法に関する。
【0002】
【従来の技術】
従来、例えば、同軸ケ−ブルの屈曲あるいは機械的振動などによって同軸ケ−ブルの外部導体と誘電体との間に摺動が生じ、その結果、静電荷が発生して同軸ケ−ブルの伝送特性に悪影響を与えることがあった。この悪影響を防止するために、低雑音同軸ケーブルが提案されているが、この低雑音同軸ケーブルは、同軸ケ−ブルの外部導体層と誘電体層との間に半導電層を設け、さらにこれらの各層間で摺動が生じないように各層相互間を強固に密着して構成していたので同軸ケ−ブルの可撓性が悪く、しかもその強固な密着のために、同軸ケ−ブルの端末処理の際に行われる半導電層の除去作業も困難で時間がかかり、その端末処理作業が煩わしかった。
【0003】
上記したような低雑音同軸ケ−ブルにおいて、例えば、これまで高速信号伝送が可能な同軸ケ−ブルが提案されているが、このような同軸ケーブルでは、内部導体を被覆する誘電体として、誘電率の低いポリテトラフルオロエチレンを用いて内部導体の周囲を被覆し、この誘電体と外部導体との間に設けられる半導電層としては、多孔質ポリテトラフルオロエチレン製テープの多孔部分に導電性の炭素粉末あるいは炭素繊維を混入して半導電性にしたテープを誘電体の周囲に巻回し、その後、焼結し完全に融着して低雑音同軸ケーブルを構成しているために、誘電体と半導電性にしたテープとの間が強固に固着し、その結果、このケーブルの可撓性が悪く、しかもその端末処理を行う際にも、半導電層を誘電体から削除するのに刃物あるいは切削具等を用いて時間がかかり、その作業も困難であった。特に、上記した低雑音同軸ケーブルの径が細いものでは、その端末処理に非常に時間がかかり、その作業も非常に困難となるという問題点を有していた。
【0004】
【発明が解決しようとする課題】
したがって、本発明は、上記した従来技術の問題点を解決するためになされたもので、その目的は、高速信号伝送が可能で、可撓性を損なうことなく、しかも端末処理が容易な低雑音同軸ケーブルを提供することにある。
【0005】
【課題を解決するための手段】
上記目的は、本願発明に係わる低雑音同軸ケーブルおよびその製造方法によって達成される。すなわち、要約すれば、本願発明は、内部導体と、この内部導体の周囲に被覆される誘電体層と、この誘電体層の周囲に形成される半導電層と、この半導電層の周囲に形成される外部導体層と、この外部導体層の周囲に被覆されるジャケットを備える低雑音同軸ケーブルにおいて、前記誘電体層はポリテトラフルオロエチレンからなり、前記半導電層は、前記誘電体層の周囲に、塑性変形可能な未焼成もしくは半焼成の半導電性多孔質ポリテトラフルオロエチレンのテープを巻回して形成され、前記外部導体層が塑性変形可能な前記半導電層に埋設されて、前記外部導体層および前記半導電層が前記誘電体層に密着していることを特徴とする低雑音同軸ケーブルであり、また、本願発明は、内部導体を準備する工程と、この内部導体の周囲に誘電体層を被覆する工程と、この誘電体層の周囲に塑性変形可能な未焼成もしくは半焼成の半導電性多孔質ポリテトラフルオロエチレンのテープを巻回して半導電層を形成する工程と、この半導電層の周囲に外部導体層を形成する工程と、この外部導体層を外部からしごいて前記外部導体層を前記半導電層に埋設して前記外部導体層および前記半導電層を前記誘電体層に密着させる工程と、前記外部導体層の周囲にジャケットを被覆する工程とを備えることを特徴とする低雑音同軸ケーブルの製造方法である。
【0006】
【発明の実施の形態】
本発明による低雑音同軸ケーブル1では、半導電層を焼結させることなく、外部導体層を外部からしごいて、この外部導体層を、未焼成もしくは半焼成のEPTFE製テープのため塑性変形可能な半導電層に埋設させ、その結果、半導電層および外部導体層を誘電体層に密着させて、そこに維持しているので、その端末処理を行う場合には、テープ巻回により形成されている半導電層を誘電体層から巻きほどくことにより、特別な工具あるいは装置を必要とすることなく、容易に除去することができ、端末処理が極めて容易に行える。
さらに、この低雑音同軸ケーブルでは、上記したように、半導電層が誘電体層に融着する焼成が行われることなく、したがって可撓性も損なわれることがない。
【0007】
【実施例】
本発明を、その一実施例に基づいて添付図面を参照しつつ以下に述べる。
図1は、本発明による低雑音同軸ケーブルの一実施例の断面図である。
図1を参照すると、この図1には、本発明による低雑音同軸ケーブル10が示されており、この低雑音同軸ケーブル10は、内部導体2(本実施例では、外径0.17mmの銀めっき銅被鋼線の7本撚り)の周囲に誘電率の低いポリテトラフルオロエチレンを押出し被覆して形成された誘電体層3を備えている(本実施例では、外径1.3mm)。
【0008】
この誘電体層3の周囲には多孔質ポリテトラフルオロエチレン(EPTFE)製テープの多孔部分に導電性の炭素粉末あるいは炭素繊維を混入して半導電性にした未焼成もしくは半焼成のEPTFE製テープ(本実施例では、幅5mm、厚さ0.1mm)を巻回することによって半導電層4(本実施例では、厚さ0.2mm)が形成され、この半導電層4の周囲には導体素線を横巻きにした横巻きシールドの外部導体層5(本実施例では、外径0.12mmの銀めっき軟銅線43本を用い、外径1.84mm)が形成されている。
【0009】
その後、ダイス(図示せず)等を用いて、この形成された外部導体層5を外部からしごいて、この外部導体層5を、未焼成もしくは半焼成のEPTFE製テープのため塑性変形可能な半導電層4に埋設させ、その結果、半導電層4および外部導体層5を誘電体層3に密着させて、そこに維持し、その後、さらにこの外部導体層5の周囲にテトラフルオロエチレンーヘキサフルオロプロピレン共重合体(FEP)を被覆してジャケット6(本実施例では、厚さ0.2mm)を形成することによって低雑音同軸ケーブル10を構成している。
【0010】
このようにして構成された上記低雑音同軸ケーブル10において、その端末処理を行う場合には、ケーブル10の端部から所望する所定長さのジャケット6を除去した後、半導電層4に埋設されている外部導体層5を半導電層4から取り除いて束ね、そして所定方向へ折り返し、その後、テープ巻回により形成されている半導電層4を巻きほどくことにより、埋設された外部導体5によって誘電体層3に押しつけられ密着していた、所謂生テープ、すなわち焼成されていない未焼成もしくは半焼成のEPTFE製テープの半導電層4を誘電体層3から、特別な工具あるいは装置を必要とすることなく、容易に除去することができ、端末処理が極めて容易に行える。
【0011】
さらに、この低雑音同軸ケーブル10では、未焼成もしくは半焼成のEPTFE製テープの半導電層4が、外部導体層5の外部からのしごきにより、外部導体層5と共に、誘電体層3に密着されて、そこに維持されるので、誘電体層3に融着する焼成が行われることなく、したがって可撓性も損なわれることがない。
【0012】
なお、本願発明による上記構成の低雑音同軸ケーブルの雑音電荷量を測定するために、ケーブル長さ2mを試料として、これに振幅5mm、周波数20Hzの振動を加えたところ、雑音電荷量は7pC(ピコ クーロン)であった。比較例として、本願発明の半導電層4を備えないものを、同条件下で雑音電荷量の測定を行ったところ、雑音電荷量は1000pC(ピコ クーロン)であり、本願発明による低雑音同軸ケーブルの雑音電荷量が充分低減されていることが理解されるであろう。
【0013】
【発明の効果】
以上説明してきたように、本発明の低雑音同軸ケーブルによれば、誘電体層および半導電層に誘電率の低いポリテトラフルオロエチレンを用いているので高速信号伝送が可能であり、しかも半導電層を誘電体層に焼成することがないので、半導電層を誘電体層から、特別な工具あるいは装置を必要とすることなく、容易に除去することができ、端末処理が極めて容易に行えると共に、可撓性も損なわれることがないという効果を奏する。
【0014】
【図面の簡単な説明】
【図1】本発明による低雑音同軸ケーブルの一実施例の断面図である。
【符号の説明】
2:内部導体、 3:誘電体層、
4:半導電層、 5:外部導体層、
6:ジャケット、 10:低雑音同軸ケーブル。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a low-noise coaxial cable and a method for manufacturing the same, and particularly to a low-noise coaxial cable having a good flexibility and easy terminal processing and a method for manufacturing the same.
[0002]
[Prior art]
Conventionally, for example, sliding occurs between the outer conductor of the coaxial cable and the dielectric due to bending or mechanical vibration of the coaxial cable, and as a result, an electrostatic charge is generated to transmit the coaxial cable. The characteristics may be adversely affected. In order to prevent this adverse effect, a low-noise coaxial cable has been proposed. This low-noise coaxial cable is provided with a semiconductive layer between the outer conductor layer and the dielectric layer of the coaxial cable, and further these In order to prevent sliding between the layers, the layers are tightly adhered to each other, so that the flexibility of the coaxial cable is poor, and the coaxial cable is The removal of the semiconductive layer performed during the terminal processing is also difficult and time consuming, and the terminal processing is troublesome.
[0003]
In the above-described low noise coaxial cable, for example, a coaxial cable capable of high-speed signal transmission has been proposed so far. In such a coaxial cable, a dielectric as a dielectric covering the inner conductor is used. Polytetrafluoroethylene, which has a low rate, is coated around the inner conductor, and the semiconductive layer provided between the dielectric and the outer conductor is conductive in the porous portion of the porous polytetrafluoroethylene tape. A tape made semiconductive by mixing carbon powder or carbon fiber is wound around the dielectric, then sintered and completely fused to form a low noise coaxial cable. As a result, the cable is not flexible enough to remove the semiconductive layer from the dielectric even when the end treatment is performed. Or It takes a long time by using the Kezugu, etc., it was also difficult the work. In particular, the above-described low-noise coaxial cable with a small diameter has a problem that it takes a very long time to process the terminal and the operation becomes very difficult.
[0004]
[Problems to be solved by the invention]
Therefore, the present invention has been made to solve the above-described problems of the prior art, and its purpose is to enable high-speed signal transmission, low flexibility without sacrificing flexibility, and easy terminal processing. To provide a coaxial cable.
[0005]
[Means for Solving the Problems]
The above object is achieved by a low noise coaxial cable and a method for manufacturing the same according to the present invention. That is, in summary, the present invention relates to an inner conductor, a dielectric layer coated around the inner conductor, a semiconductive layer formed around the dielectric layer, and a periphery of the semiconductive layer. In a low-noise coaxial cable including an outer conductor layer to be formed and a jacket coated around the outer conductor layer, the dielectric layer is made of polytetrafluoroethylene, and the semiconductive layer is formed of the dielectric layer. Around the periphery is formed by winding a plastically deformable green or semi-fired semiconductive porous polytetrafluoroethylene tape, and the outer conductor layer is embedded in the plastically deformable semiconductive layer , a low noise coaxial cable, characterized in that the outer conductor layer and the semiconductive layer is in close contact with the dielectric layer, the present invention includes the steps of preparing an inner conductor, around the inner conductor A step of covering the collector layer, forming a dielectric layer semiconductive layer by winding a tape of semiconductive porous polytetrafluoroethylene plastically deformable green or semi-sintered around, Forming an external conductor layer around the semiconductive layer; and squeezing the external conductor layer from the outside to embed the external conductor layer in the semiconductive layer so that the external conductor layer and the semiconductive layer are A method for manufacturing a low-noise coaxial cable, comprising: a step of closely contacting a dielectric layer; and a step of covering a jacket around the outer conductor layer.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
In the low-noise coaxial cable 1 according to the present invention, the outer conductor layer is squeezed from the outside without sintering the semiconductive layer, and the outer conductor layer can be plastically deformed because of the unfired or semi-fired EPTFE tape. As a result, the semiconductive layer and the outer conductor layer are kept in close contact with the dielectric layer, so that when the end treatment is performed, it is formed by winding the tape. When the semiconductive layer is unwound from the dielectric layer, it can be easily removed without requiring a special tool or apparatus, and the terminal treatment can be performed very easily.
Furthermore, in this low-noise coaxial cable, as described above, the semiconductive layer is not baked to be fused to the dielectric layer, and therefore the flexibility is not impaired.
[0007]
【Example】
The present invention will be described below with reference to the accompanying drawings on the basis of one embodiment thereof.
FIG. 1 is a cross-sectional view of an embodiment of a low noise coaxial cable according to the present invention.
Referring to FIG. 1, a low noise coaxial cable 10 according to the present invention is shown in FIG. 1, and this low noise coaxial cable 10 is composed of an inner conductor 2 (in this embodiment, silver having an outer diameter of 0.17 mm). A dielectric layer 3 formed by extruding and coating polytetrafluoroethylene having a low dielectric constant is provided around (7 twists of plated copper-coated steel wire) (in this embodiment, an outer diameter of 1.3 mm).
[0008]
Around this dielectric layer 3, an unsintered or semi-sintered EPTFE tape in which conductive carbon powder or carbon fiber is mixed into a porous part of a porous polytetrafluoroethylene (EPTFE) tape to make it semiconductive. A semiconductive layer 4 (in this embodiment, a thickness of 0.2 mm) is formed by winding (in this embodiment, a width of 5 mm and a thickness of 0.1 mm). An outer conductor layer 5 (in this embodiment, 43 silver-plated annealed copper wires having an outer diameter of 0.12 mm and an outer diameter of 1.84 mm) in which a conductor wire is wound horizontally is formed.
[0009]
Thereafter, the formed outer conductor layer 5 is squeezed from the outside using a die (not shown) or the like, and the outer conductor layer 5 can be plastically deformed because of an unfired or semi-fired EPTFE tape. Embedded in the semiconductive layer 4, and as a result, the semiconductive layer 4 and the external conductor layer 5 are brought into close contact with the dielectric layer 3 and maintained there. A low-noise coaxial cable 10 is formed by covering a hexafluoropropylene copolymer (FEP) to form a jacket 6 (in this embodiment, a thickness of 0.2 mm).
[0010]
In the low-noise coaxial cable 10 configured as described above, when the end processing is performed, the jacket 6 having a desired length is removed from the end of the cable 10 and then embedded in the semiconductive layer 4. The outer conductive layer 5 is removed from the semiconductive layer 4 and bundled, folded in a predetermined direction, and then unwound the semiconductive layer 4 formed by winding the tape, so that the dielectric is formed by the embedded external conductor 5. A special tool or device is required from the dielectric layer 3 to the semiconductive layer 4 of the so-called green tape that has been pressed against and closely adhered to the body layer 3, that is, the unfired or semi-fired EPTFE tape. Therefore, the terminal processing can be performed very easily.
[0011]
Further, in this low-noise coaxial cable 10, the semiconductive layer 4 of the unfired or semi-fired EPTFE tape is adhered to the dielectric layer 3 together with the external conductor layer 5 by ironing from the outside of the external conductor layer 5. Thus, since it is maintained there, firing to be fused to the dielectric layer 3 is not performed, and therefore flexibility is not impaired.
[0012]
In order to measure the noise charge amount of the low-noise coaxial cable having the above configuration according to the present invention, when a cable length of 2 m was used as a sample and vibration with an amplitude of 5 mm and a frequency of 20 Hz was added, the noise charge amount was 7 pC ( Pico Coulomb). As a comparative example, when the noise charge amount of a device without the semiconductive layer 4 of the present invention was measured under the same conditions, the noise charge amount was 1000 pC (picocoulomb). It will be understood that the amount of noise charge is sufficiently reduced.
[0013]
【The invention's effect】
As described above, according to the low-noise coaxial cable of the present invention, polytetrafluoroethylene having a low dielectric constant is used for the dielectric layer and the semiconductive layer, so that high-speed signal transmission is possible. Since the layer is not fired into a dielectric layer, the semiconductive layer can be easily removed from the dielectric layer without the need for special tools or equipment, and the terminal treatment can be performed very easily. There is an effect that flexibility is not impaired.
[0014]
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of an embodiment of a low noise coaxial cable according to the present invention.
[Explanation of symbols]
2: inner conductor, 3: dielectric layer,
4: semiconductive layer, 5: outer conductor layer,
6: Jacket, 10: Low noise coaxial cable.

Claims (2)

内部導体と、この内部導体の周囲に被覆される誘電体層と、この誘電体層の周囲に形成される半導電層と、この半導電層の周囲に形成される外部導体層と、この外部導体層の周囲に被覆されるジャケットを備える低雑音同軸ケーブルにおいて、前記誘電体層はポリテトラフルオロエチレンからなり、前記半導電層は、前記誘電体層の周囲に、塑性変形可能な未焼成もしくは半焼成の半導電性多孔質ポリテトラフルオロエチレンのテープを巻回して形成され、前記外部導体層が塑性変形可能な前記半導電層に埋設されて、前記外部導体層および前記半導電層が前記誘電体層に密着していることを特徴とする低雑音同軸ケーブル。An inner conductor, a dielectric layer coated around the inner conductor, a semiconductive layer formed around the dielectric layer, an outer conductor layer formed around the semiconductive layer, and the outer In a low-noise coaxial cable having a jacket coated around a conductor layer, the dielectric layer is made of polytetrafluoroethylene, and the semiconductive layer is unfired or plastically deformable around the dielectric layer. Formed by winding a semi-baked semiconductive porous polytetrafluoroethylene tape, the outer conductor layer is embedded in the plastically deformable semiconductive layer, and the outer conductor layer and the semiconductive layer are A low-noise coaxial cable characterized by being in close contact with a dielectric layer. 内部導体を準備する工程と、この内部導体の周囲に誘電体層を被覆する工程と、この誘電体層の周囲に塑性変形可能な未焼成もしくは半焼成の半導電性多孔質ポリテトラフルオロエチレンのテープを巻回して半導電層を形成する工程と、この半導電層の周囲に外部導体層を形成する工程と、この外部導体層を外部からしごいて前記外部導体層を前記半導電層に埋設して前記外部導体層および前記半導電層を前記誘電体層に密着させる工程と、前記外部導体層の周囲にジャケットを被覆する工程とを備えることを特徴とする低雑音同軸ケーブルの製造方法。A step of preparing an inner conductor, a step of coating a dielectric layer around the inner conductor, and an unfired or semi-fired semiconductive porous polytetrafluoroethylene that can be plastically deformed around the dielectric layer . A step of winding a tape to form a semiconductive layer, a step of forming an external conductor layer around the semiconductive layer, and squeezing the external conductor layer from the outside to convert the external conductor layer into the semiconductive layer A method of manufacturing a low-noise coaxial cable, comprising: embedding and adhering the outer conductor layer and the semiconductive layer to the dielectric layer; and covering a jacket around the outer conductor layer. .
JP21648498A 1998-07-14 1998-07-14 Low noise coaxial cable and manufacturing method thereof Expired - Fee Related JP4136097B2 (en)

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JP21648498A JP4136097B2 (en) 1998-07-14 1998-07-14 Low noise coaxial cable and manufacturing method thereof

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JP2000030548A JP2000030548A (en) 2000-01-28
JP4136097B2 true JP4136097B2 (en) 2008-08-20

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JP4729751B2 (en) * 2004-04-06 2011-07-20 株式会社潤工社 coaxial cable
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