JP4137739B2 - Perforated wiring base material for multilayer wiring board with built-in semiconductor device, multilayer wiring board with built-in semiconductor device, and manufacturing method thereof - Google Patents

Description

The present invention relates to a perforated wiring base for a multilayer wiring board with a built- in semiconductor device, a multilayer wiring board with a built- in semiconductor device , and a method for manufacturing the same, and in particular, a plurality of wiring bases including a wiring base on which a semiconductor device is mounted. The present invention relates to a perforated wiring base material for a multilayer wiring board with a built- in semiconductor device, a multilayer wiring board with a built- in semiconductor device , and a manufacturing method thereof suitable for use in a high-density and ultra-small three-dimensional mounting module.

In recent years, in addition to passive components such as resistors and capacitors, small active components such as small semiconductor packages, semiconductor bare chips, and fine pitch ball grid arrays (FBGA) have been mounted on printed circuit boards and ceramic laminates. Therefore, a surface mounting method has been put into practical use in which the mounting density of components on the substrate is improved and the electronic device is reduced in size, weight, and thickness. This surface mounting method is intended to reduce the size of each component.
In order to further improve the mounting density of components, a three-dimensional mounting module using a three-dimensional mounting technique in which semiconductor devices are stacked three-dimensionally has been developed. This three-dimensional mounting module is intended to increase the mounting density by placing three-dimensionally a part that cannot be placed even by the surface mounting method described above, especially a semiconductor device having a large part size, or by placing it inside the board. To do.

The above-described three-dimensional mounting technology is a technology that has recently attracted attention as a technology that contributes not only to downsizing of devices but also to speeding up of computers and communication devices.
For example, in communication devices, it is expected that video communication functions using an image sensor, Bluetooth interface functions, GPS functions, etc. will be installed in the future. It will be pushed forward and will lead to higher density of mounting technology. As described above, if the semiconductor devices are three-dimensionally stacked and wired, the wiring length can be shortened and high-speed signals can be transmitted. It is.

There are two types of three-dimensional mounting techniques.
One is a technology for 3D mounting modules that stack components on or inside a printed circuit board, but it is necessary for equipment manufacturers that use 3D mounting modules to advance research and development of dedicated mounting machines. It is hardly spread.
The other is a technique regarding a three-dimensional mounting package in which semiconductor devices are stacked in a package (see, for example, Non-Patent Document 1). For an electric manufacturer that manufactures a three-dimensional mounting package, the type and number of semiconductor devices Because of the fact that the number of wiring substrates to be laminated becomes a differentiating factor from other companies and that even if they have the same shape, they can exert a wide variety of functions, LSI manufacturers are serious about development. I'm starting.

In this three-dimensional mounting package, a plurality of types of wiring base materials are formed by forming conductor wiring on an insulating base material made of a heat-resistant resin, and a semiconductor device is mounted on one or more of these wiring base materials. The wiring substrate is mounted on a semiconductor device, and these wiring substrates are laminated and fused and integrated by thermocompression bonding (see, for example, Patent Document 1).
Lamination, thermocompression bonding, and fusion integration are performed using a lamination jig with a built-in heater, and the fusion temperature is equal to or higher than the glass transition temperature of the heat-resistant resin.
Kazuo Nishiyama, “Mounting needs of digital home appliances and semiconductor packaging technology”, Journal of Japan Institute of Electronics Packaging, Japan Institute of Electronics Packaging, 2001, Vol. 4, No. 3, p. 166-169 JP 2001-119148 A

  By the way, since the conventional three-dimensional mounting package is obtained by laminating a plurality of wiring substrates including a substrate on which a semiconductor device is mounted and fusing and integrating them by thermocompression bonding. Due to the pressure applied directly and the thermal stress caused by the difference in thermal expansion coefficient between the semiconductor device and the wiring substrate, deformation or wiring distortion occurs between the semiconductor device itself or between the semiconductor device and the wiring substrate, and the There has been a problem that defects such as a short circuit (O / S) or the like may occur, or a dimensional shift may occur.

This deformation and wiring distortion become a serious problem that cannot be ignored for finer wiring pitch, which is essential in a high-density and ultra-small three-dimensional mounting module.
In addition, after fusing and integrating by thermocompression bonding, depending on the fusing conditions (temperature and pressure), a void is formed due to insufficient resin wrapping between the semiconductor device and the wiring substrate. Further, there is a possibility that water accumulates due to moisture absorption and swelling occurs in a later reflow process, resulting in a decrease in moisture absorption reflow heat resistance.
As a result, there are problems that the initial characteristics and operational characteristics of the semiconductor device and the wiring substrate become unstable, and the operational characteristics change with time, and the reliability of the semiconductor device and the wiring substrate decreases.

The present invention has been made in order to solve the above-described problem, and a plurality of wiring base materials including a base material on which a semiconductor device is mounted are stacked, thermocompression-bonded, and fused and integrated. There is no risk of wiring distortion or deformation between the device itself or between the semiconductor device and the wiring substrate, and therefore there is no risk of problems such as wiring defects such as open / short (O / S) and dimensional deviations. Further, formation of voids is prevented, and therefore, a decrease in moisture absorption reflow heat resistance is prevented. As a result, finer wiring pitch in a high-density and ultra-small three-dimensional mounting module is achieved, and semiconductor devices and wiring Perforated wiring base material for multi-layer wiring boards with built-in semiconductor devices and built-in semiconductor devices that can stabilize the initial characteristics and operational characteristics of the base materials and improve the reliability of semiconductor devices and wiring base materials Multilayer wiring base Another object of the invention is to provide a manufacturing method thereof.

When a plurality of wiring base materials including a wiring base material on which a semiconductor device is mounted are laminated, thermocompression bonded, and fused and integrated, the thermoplastic resin constituting the wiring base material having the opening portion reduces the area of the opening portion. Deform and extend as you do. At that time, the present inventor has found that the deformation / expansion of the thermoplastic resin is larger at the side of the opening than at the corner. Then, when the shape of the opening is rectangular, when the fusion is integrated, the thermoplastic resin is first fused to the semiconductor device at the side of the opening, and voids are easily formed at the corners. It turns out that a malfunction occurs. Therefore, as a result of intensive studies, the present inventor has determined the shape of the opening so that the space between the semiconductor device and the thermoplastic resin before lamination and thermocompression bonding is larger than the corners at the sides of the semiconductor device. It was found that these problems can be resolved by devising the.
Specifically, the planar shape of the opening formed to accommodate the semiconductor device is a figure that does not have five or more recesses, for example, a pentagon or more polygon, and all the corners of the polygon are curved. If a perforated wiring base material that is either a figure, an ellipse, or the like is used, the shape of the resin that forms the perforated wiring base material changes during fusion integration with the semiconductor device. In the process of filling the space, the space between the semiconductor device and the thermoplastic resin becomes the same at the corners and sides of the semiconductor device, so that the pressure of the thermoplastic resin on the semiconductor device is even. As a result, it has been found that the above problems can be solved and the above object can be achieved, and the present invention has been achieved.

That is, the perforated wiring base material for a multilayer wiring board with a built- in semiconductor device according to the present invention is a wiring base material in which a conductor wiring is formed on an insulating base material made of a thermoplastic resin composition, and is used for housing a semiconductor device. The planar shape of the opening formed in the above is either a pentagon or more polygon, a figure in which all the corners of the polygon are curved, or an ellipse, and five or more indentations. It is characterized by not having.

  The thermoplastic resin composition includes a crystalline thermoplastic resin composition having a crystal melting peak temperature of 260 ° C. or higher, an amorphous thermoplastic resin composition having a glass transition temperature of 260 ° C. or higher, and a liquid crystal transition temperature of 260 ° C. The main component is preferably one or more selected from the above liquid crystal polymers.

In the multilayer wiring board with a built-in semiconductor device of the present invention, a plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition are laminated, and among these wiring base materials, 1 A semiconductor device is mounted on one or two or more wiring base materials, and the wiring base material disposed adjacent to the wiring base material on which the semiconductor device is mounted has an opening for accommodating the semiconductor device. In the multilayer wiring board with a built-in semiconductor device, which is formed and these wiring base materials are fused and integrated by thermocompression bonding,
The planar shape of the opening is a polygon that is a pentagon or more, a figure in which all corners of the polygon are curved, or an ellipse, and does not have five or more indentations. It is characterized by that.

  By adopting such a configuration, the multilayer wiring board with a built-in semiconductor device of the present invention changes the shape of the resin constituting the perforated wiring base material at the time of lamination, thermocompression bonding, and fusion integration, so that the space between the semiconductor device and the semiconductor device is reduced. In the process of filling, the space between the semiconductor device and the thermoplastic resin becomes equally small at the corners and sides of the semiconductor device, so that the pressure of the thermoplastic resin on the semiconductor device becomes equal, It is possible to solve the above problems and achieve the above object.

  In the multilayer wiring board with a built-in semiconductor device of the present invention, a plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition are laminated, and among these wiring base materials, 1 A semiconductor device is mounted on one or two or more wiring substrates, and an opening is formed in the wiring substrate disposed adjacent to the wiring substrate on which the semiconductor device is mounted so that the semiconductor device can be accommodated. In the multilayer wiring board with a built-in semiconductor device in which these wiring base materials are fused and integrated by thermocompression bonding, a gap between the semiconductor device having a polygonal planar shape and the opening is a corner of the semiconductor device when stacked. It is characterized in that it is minimum in the part.

  By adopting such a configuration, the multilayer wiring board with a built-in semiconductor device of the present invention changes the shape of the resin constituting the perforated wiring base material at the time of lamination, thermocompression bonding, and fusion integration, so that the space with the semiconductor device is saved. In the process of filling, the space between the semiconductor device and the thermoplastic resin becomes equally small at the corners and sides of the semiconductor device, so that the pressure of the thermoplastic resin on the semiconductor device becomes equal, It is possible to solve the above problems and achieve the above object.

  In the multilayer wiring board with a built-in semiconductor device of the present invention, the thermoplastic resin composition is a crystalline thermoplastic resin composition having a crystal melting peak temperature of 260 ° C. or higher, and an amorphous property having a glass transition temperature of 260 ° C. or higher. It is preferable that at least one selected from a thermoplastic resin composition and a liquid crystal polymer having a liquid crystal transition temperature of 260 ° C. or higher as a main component.

The method for manufacturing a multilayer wiring board with a built-in semiconductor device according to the present invention includes a plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition, and the plurality of wiring base materials are stacked. Among these, a semiconductor device is mounted on one or two or more wiring base materials, and the wiring base material disposed adjacent to the wiring base material on which the semiconductor device is mounted accommodates the semiconductor device. Are formed, and these wiring base materials are fused and integrated by thermocompression bonding.
A wiring substrate for mounting a semiconductor device, and an opening for housing the semiconductor device is formed in a part of the substrate, and a planar shape of the opening is a pentagon or more polygon, all of the polygons Perforated wiring base material for a multilayer wiring board with a built-in semiconductor device that is either a figure with a curved corner or an ellipse and does not have five or more recesses , and other wiring bases A material is prepared, and then a semiconductor device is mounted on the wiring substrate for mounting the semiconductor device, and these wiring substrates are laminated and fused and integrated by thermocompression bonding.

  The manufacturing method of a multilayer wiring board with a built-in semiconductor device of the present invention adopts such a configuration, so that the resin constituting the perforated wiring base material changes its shape during lamination, thermocompression bonding, and fusion integration. In the process of filling the space of the semiconductor device, the space between the semiconductor device and the thermoplastic resin becomes the same at the corners and sides of the semiconductor device, so that the pressure of the thermoplastic resin on the semiconductor device is equalized. Thus, the above problems can be solved and the above object can be achieved.

  In the method for manufacturing a semiconductor device built-in multilayer wiring board, the temperature when fusing and integrating a plurality of wiring base materials by thermocompression bonding is not less than the glass transition temperature or the liquid crystal transition temperature of the wiring base material for mounting the semiconductor device. Preferably it is.

According to the perforated wiring base material for a multilayer wiring board with a built- in semiconductor device, the multilayer wiring board with a built- in semiconductor device, and the method for manufacturing the wiring board, a plurality of wiring base materials including the base material on which the semiconductor device is mounted are stacked. Then, when thermocompression bonding and fusion integration are performed, it is possible to prevent the occurrence of wiring distortion or deformation between the semiconductor device itself or between the semiconductor device and the wiring base material. / S) and other problems such as wiring defects and dimensional deviations can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitch can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate can be improved, and the reliability of the semiconductor device and the wiring substrate can be improved.

  An embodiment of a holed wiring substrate of the present invention, a multilayer wiring board with a built-in semiconductor device using the holed wiring substrate, and a method for manufacturing the same will be described.

[Wiring substrate]
FIG. 1 is a cross-sectional view showing a perforated wiring substrate according to an embodiment of the present invention. In the perforated wiring base material 3, a via hole 13 penetrating the insulating base material 15 is formed in a thin plate-like, film-like or sheet-like insulating base material 15 made of a thermoplastic resin composition. 13 is filled with a conductive material 14 obtained by curing a conductive paste, and an opening 16 for accommodating a semiconductor device 18 described later is formed at a predetermined position of the insulating base material 15.

FIG. 2 is a schematic plan view showing four examples of the perforated wiring substrate 3 in which the opening of the present invention is formed. However, in FIG. 2, the conductor wiring formed on the perforated wiring substrate 3 is omitted. The perforated wiring base material 3 in this example is assumed to have a substantially square overall planar shape. An opening 16 is formed at the center of the perforated wiring substrate 3. The planar shape of the opening 16 is a figure that does not have five or more recessed portions 10. Examples of the figure that does not have the five or more recessed portions 10 include a pentagon or more polygon, a figure in which all corners of the polygon are curved, and an ellipse.
Further, in the present invention, the “dented portion” refers to a portion that bulges toward the inside of the figure forming the planar shape of the opening 16.

In FIG. 2A, the planar shape of the opening 16 is an octagon. In FIG. 2B, the planar shape of the opening 16 is a figure in which all the corners 17 of the octagon are arcs. In FIG.2 (c), the planar shape of the opening part 16 is an ellipse. In FIG. 2D, the planar shape of the opening 16 is a figure in which the recess 10 is formed in the four corners 17 of the octagon.
The planar shape of the opening 16 is preferably an octagon or more and a thirty-two or less octagon and a polygon in which the number of corners 17 is a multiple of four, particularly octagons, dodecagons, dodecagons, and decagons. preferable. Further, more preferable as the planar shape of the opening 16 is a figure in which all the corners 17 of these polygons are curved. When the planar shape of the opening 16 is this figure, the thermoplastic resin constituting the perforated wiring substrate 3 changes its shape and fills the space with the semiconductor device 18 during lamination, thermocompression bonding, and fusion integration. In the process, the space between the semiconductor device 18 and the thermoplastic resin is reduced to the same extent at the corners 30 and the sides of the semiconductor device 18, so that the pressure of the thermoplastic resin on the semiconductor device 18 is further increased. Because it becomes even.

  In the thermoplastic resin composition used for the perforated wiring substrate 3, the crystalline thermoplastic resin composition having a crystal melting peak temperature (Tm) of 260 ° C. or higher, or the glass transition temperature (Tg) of 260. One or more selected from an amorphous thermoplastic resin composition having a temperature of not lower than ° C. and a liquid crystal polymer having a liquid crystal transition temperature (Tc) of not lower than 260 ° C. are preferably used.

  As the crystalline thermoplastic resin composition having a crystal melting peak temperature (Tm) of 260 ° C. or higher, for example, a resin composition containing 40% by weight of polyetheretherketone (PEEK) and 60% by weight of polyetherimide (PEI) (PEEK / PEI: Tg = 185 ° C., Tm = 335 ° C.), 40% by weight of polyphenylene sulfide (PPS) and 60% by weight of polyetherimide (PEI) (PPS / PEI: Tg = 150 ° C.) , Tm = 280 ° C.), resin composition containing 40% by weight of syndiotactic polystyrene (SPS) and 60% by weight of modified polyphenylene ether (modified PPE) (SPS / modified PPE: Tg = 120 ° C., Tm = 265 ° C.) Etc. are preferably used.

  Examples of the amorphous thermoplastic resin composition having a glass transition temperature (Tg) of 260 ° C. or higher include, for example, polyamideimide (PAI: Tg> 260 ° C.), polyimide (PI: Tg> 260 ° C.), and the glass transition temperature. What (Tg) prepared suitably by molecular design is used suitably.

  As the liquid crystal polymer having a liquid crystal transition temperature (Tc) of 260 ° C. or higher, various conventionally known ones such as a thermotropic liquid crystal polymer can be used. Examples of such liquid crystal polymers include polyesters that are synthesized from monomers such as aromatic diols, aromatic carboxylic acids, and hydroxycarboxylic acids and that exhibit liquid crystallinity when melted. Those composed of benzoic acid (PHB), terephthalic acid and biphenol, those composed of PHB and 2,6-hydroxynaphthoic acid, and those composed of PHB, terephthalic acid and ethylene glycol are preferably used.

For this thermoplastic resin composition, other resins and various additives, such as inorganic fillers, stabilizers, ultraviolet absorbers, light stabilizers, nucleating agents, colorants, to the extent that their properties are not impaired. Lubricants, flame retardants, inorganic fillers, adhesion promoters and the like may be added as appropriate.
There is no restriction | limiting in particular as an inorganic filler, Any well-known thing can be used. For example, silica, talc, mica, mica, glass flake, boron nitride (BN), plate-like carbon cal, plate-like aluminum hydroxide, plate-like silica, plate-like potassium titanate and the like can be mentioned. These may be added alone or in combination of two or more.
Examples of the adhesion promoter include γ-aminopropyltrimethoxysilane and γ-aminopropyltriethoxysilane.

[Multilayer wiring board with built-in semiconductor device]
FIG. 3 is a cross-sectional view showing a multilayer wiring board with a built-in semiconductor device according to an embodiment of the present invention. In the figure, reference numeral 1 is the uppermost wiring substrate, 2 is a solid inner layer substrate, and 3 is perforated. The wiring base material 4 is a semiconductor device mounting inner layer base material (hereinafter simply referred to as “semiconductor device mounting interior base material”) which is the lowermost wiring base material.

The uppermost wiring substrate 1 is usually a thin plate-like, film-like or sheet-like insulating substrate 11 having a thickness of 100 μm or less made of a thermoplastic resin composition, and the front and back surfaces of the insulating substrate 11 are flat. It has become.
In the present invention, the thermoplastic resin composition may be the same composition as the thermoplastic resin composition used for the perforated wiring substrate 3. That is, in this thermoplastic resin composition, a crystalline thermoplastic resin composition having a crystal melting peak temperature (Tm) of 260 ° C. or higher, or an amorphous heat having a glass transition temperature (Tg) of 260 ° C. or higher. One or more selected from a plastic resin composition and a liquid crystal polymer having a liquid crystal transition temperature (Tc) of 260 ° C. or higher are preferably used.

The solid inner layer base material 2 is one surface of a thin plate-like, film-like or sheet-like insulating base material 11 made of a thermoplastic resin composition having exactly the same shape as the above-mentioned uppermost layer base material 1 (in FIG. 3). On the upper side, a groove 12 for forming a wiring circuit is formed, and a via hole 13 penetrating the insulating base material 11 is formed, and a conductive material obtained by curing a conductive paste in the groove 12 and the via hole 13. 14 is filled.
Examples of the conductive paste include resin-based low-temperature firing type silver (Ag) paste, silver (Ag) -palladium (Pd) paste, copper (Cu) paste, metal-based low-temperature firing type silver (Ag) -tin (Sn). ) A paste or the like is preferably used.

  The semiconductor device mounting inner layer base material 4 is a thin plate-like, film-like or sheet-like insulating base material 11 made of a thermoplastic resin composition having exactly the same shape as the uppermost wiring base material 1 described above (see FIG. In FIG. 3, a wiring circuit forming groove portion 12 is formed on the upper side), and a via hole 13 penetrating the insulating base material 11 is formed. The groove portion 12 and the via hole 13 are formed by curing a conductive paste. A conductive material 14 is filled, and a semiconductor device 18 is mounted on the insulating base material 11, and a terminal 19 of the semiconductor device 18 is electrically connected to a wiring circuit formed of the conductive material 14.

  These uppermost wiring base material 1, solid inner layer base material 2, perforated wiring base material 3, and semiconductor device mounting inner base material 4 are laminated in this order from the top to form a thermoplastic resin composition. It is a laminated structure in which the objects are fused and integrated by thermocompression bonding, and the wiring circuit of each of the base materials 1 to 4 and the wiring that electrically connects the base materials 1 to 4 are obtained by curing the conductive paste. By being constituted by the conductive material 14, it becomes conductive.

  In the multilayer wiring board with a built-in semiconductor device according to the present invention, as the perforated wiring base material 3, the planar shape of the opening 16 formed for housing the semiconductor device 18 does not have five or more recessed portions 10, For example, a wiring base material that is any one of a polygon that is a pentagon or more, a figure in which all corners 17 of the polygon are curved, and an ellipse is used.

FIG. 4A shows an example of a multilayer wiring board with a built-in semiconductor device in which the perforated wiring base material 3 and the semiconductor device 18 are laminated and fused. In this example, the opening 16 has an octagonal planar shape and the semiconductor device 18 has a rectangular planar shape.
By adopting such a configuration, the thermoplastic resin constituting the perforated wiring base material 3 changes its shape and fills the space between the semiconductor device 18 and the thermoplasticity of the semiconductor device 18 during the fusion integration. The space between the resin and the corner portion 30 and the side portion of the semiconductor device 18 are reduced to the same extent, so that the pressure of the thermoplastic resin on the semiconductor device 18 becomes equal. Therefore, when laminating a plurality of wiring base materials including a base material on which a semiconductor device is mounted, thermocompression bonding, and fusing integration, the semiconductor device itself, wiring distortion between the semiconductor device and the wiring base material, Deformation can be prevented, and therefore problems such as wiring defects such as open / short (O / S) and dimensional deviation can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitch can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, it is possible to improve the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate, and to obtain a multilayer wiring board with a built-in semiconductor device that can improve the reliability of the semiconductor device and the wiring substrate.

  Further, when the planar shape of the opening 16 is a polygon in which all the corners 17 are curved, the heat constituting the perforated wiring substrate 3 at the time of lamination, thermocompression bonding, and fusion integration. In the process of changing the shape of the plastic resin and filling the space with the semiconductor device 18, the space between the semiconductor device 18 and the thermoplastic resin is as small as the corner 30 and the side of the semiconductor device 18. This is preferable because the pressure of the thermoplastic resin on the semiconductor device 18 becomes more uniform.

  In this example, the shape of the opening 16 in which the planar shape does not have five or more dents 10, for example, a pentagon or more polygon, a figure in which all the corners 17 of the polygon are curved, The perforated wiring base material 3 which is either oval or the like is used in addition to the portion corresponding to the corner portion 30 of the semiconductor device in the perforated wiring base material 3 when five or more recessed portions 10 are provided. The process of filling the space with the semiconductor device 18 by changing the shape of the thermoplastic resin constituting the perforated wiring substrate 3 during the lamination, thermocompression bonding, and fusion integration. This is because the thermoplastic resin is first fused to the semiconductor device at the side of the opening, and the pressure of the thermoplastic resin on the semiconductor device 18 is not uniform.

In the multilayer wiring board with a built-in semiconductor device of the present invention, the gap between the semiconductor device 18 having a polygonal planar shape and the opening 16 formed so as to accommodate the semiconductor device 18 in the perforated wiring substrate 3. 20 is the smallest at the corner 30 of the semiconductor device.
Here, the “gap” is defined as a length of a diameter of a circle inscribed in a plane in which the space is projected when the space between the semiconductor device 18 and the opening 16 is viewed from above. it can. And when the diameter of the inscribed circle is minimized, the gap is minimized.

FIG. 4B shows an example of a multilayer wiring board with a built-in semiconductor device in which the perforated wiring base material 3 and the semiconductor device 18 are laminated and fused. In this example, the opening 16 has an octagonal planar shape and the semiconductor device 18 has a rectangular planar shape.
In this example, when the space formed between the semiconductor device 18 and the opening 16 is viewed from above, the length of the diameter of a circle inscribed in the plane on which the space is projected is the smallest at the corner 30 of the semiconductor device. is there.
By adopting such a configuration, the thermoplastic resin constituting the perforated wiring base material 3 changes its shape and fills the space between the semiconductor device 18 and the thermoplasticity of the semiconductor device 18 during the fusion integration. The space between the resin and the corner portion 30 and the side portion of the semiconductor device 18 are reduced to the same extent, so that the pressure of the thermoplastic resin on the semiconductor device 18 becomes equal. Therefore, when laminating a plurality of wiring base materials including a base material on which a semiconductor device is mounted, thermocompression bonding, and fusing integration, the semiconductor device itself, wiring distortion between the semiconductor device and the wiring base material, Deformation can be prevented, and therefore problems such as wiring defects such as open / short (O / S) and dimensional deviation can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitch can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, it is possible to improve the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate, and to obtain a multilayer wiring board with a built-in semiconductor device that can improve the reliability of the semiconductor device and the wiring substrate.

On the other hand, FIG. 4C shows an example of a multilayer wiring board with a built-in semiconductor device in which a conventional perforated wiring substrate 3 and a semiconductor device 18 are laminated and fused. In this example, the opening 16 has a quadrangular planar shape and the semiconductor device 18 has a quadrangular planar shape.
In this example, the thermoplastic resin constituting the perforated wiring base material 3 changes its shape and fills the space with the semiconductor device 18 at the time of fusion integration, and the thermoplastic resin is formed at the side of the opening. However, the pressure of the thermoplastic resin on the semiconductor device 18 is not equalized first, and the pressure is insufficient at the corner portion 30 of the semiconductor device. As a result, in the multilayer wiring board with a built-in semiconductor device of this example, wiring distortion or deformation occurs between the semiconductor device and the wiring base material, or between the semiconductor devices, and therefore, open / short (O / S), etc. Insufficient wiring defects, dimensional deviations, etc. occur, and voids are easily formed, resulting in a decrease in moisture absorption reflow heat resistance, which in turn makes the initial characteristics and operating characteristics of semiconductor devices and wiring substrates unstable. Therefore, it is impossible to improve the reliability of semiconductor devices and wiring substrates.

[Manufacturing method of multilayer wiring board with built-in semiconductor device]
Next, the manufacturing method of the semiconductor device built-in multilayer wiring board of this embodiment will be described with reference to FIGS.
Here, first, individual wiring base materials, that is, the uppermost wiring base material, the solid inner layer base material, the perforated wiring base material, and the manufacturing method of the semiconductor device mounting inner layer base material will be described. A method for manufacturing a multilayer wiring board with a built-in semiconductor device using the wiring substrate will be described.

(1) The uppermost wiring base material and the solid inner layer base material First, as shown in FIG. 5A, an insulating base material 21 made of a thermoplastic resin composition having a flattened front surface and back surface is prepared. . This insulating base material 21 becomes the uppermost layer base material as it is.
Next, as shown in FIG. 5B, the convex portion 23 of the stamper 22 is thermally transferred onto the surface of the insulating base material 21. Conditions for this thermal transfer are, for example, temperature: 175 to 205 ° C. and pressure: 20 to 60 kg / cm ² .
By this thermal transfer, the wiring circuit forming groove 12 is formed on the surface of the insulating base material 21 as shown in FIG.

  The stamper 22 is made of a material having good releasability with respect to the insulating base material 21, for example, glass, ceramics, and the like, and in particular, heat-resistant glass having a thickness of 3 to 5 mm is preferably used. The stamper 22 is produced by forming a resist mask on a heat-resistant glass plate using a photolithographic method, and then forming a convex portion 23 corresponding to the wiring circuit pattern by a sandblast method using the resist mask. .

Next, as shown in FIG. 5D, a through hole that penetrates the insulating base material 21 is formed at a predetermined position of the insulating base material 21 using a laser, a mechanical drill, or the like to form a via hole 13. The via hole 13 may be formed simultaneously with the wiring circuit forming groove 12 by a stamper.
Next, as shown in FIG. 5E, the conductive paste 25 is filled into the wiring circuit forming groove 12 and the via hole 13 by squeegee printing or the like, and then the conductive paste 25 is heated at 120 ° C. to 160 ° C. The conductive material 14 is cured by heating for 30 to 60 minutes.
Next, the conductive material 14a remaining on the insulating base 21 is removed by grinding using a polishing machine (not shown), and the surface of the insulating base 21 is flattened.
Thus, the solid inner layer base material 26 can be obtained.

(2) Perforated wiring base material As shown in FIG. 6A, an insulating base material 31 made of a thermoplastic resin composition whose front and back surfaces are flattened is prepared.
The thickness of the insulating base 31 is 1.05 to 1.20 times the thickness of the semiconductor device 18.

Next, as shown in FIG. 6B, a through hole penetrating the insulating base material 31 is formed at a predetermined position of the insulating base material 31 using a laser, a mechanical drill, or the like to form a via hole 13.
Next, as shown in FIG. 6C, the conductive paste 25 is filled in the via hole 13 by squeegee printing or the like, and then the conductive paste 25 is heated at 120 to 160 ° C. for 30 to 60 minutes. The conductive material 14 is then cured.

Next, as shown in FIG. 6D, the conductive material 14a remaining on the insulating base material 31 is ground and removed using a polishing machine (not shown), and the surface of the insulating base material 31 is flattened.
Next, as shown in FIG. 6 (e), an opening 32 for housing a semiconductor device is punched into a predetermined portion of the insulating base 31 using a punching molding machine (not shown). The planar shape of the mold for punching the opening 32 is a figure that does not have five or more recessed parts, for example, a polygon that is a pentagon or more, and a figure in which all corners of the polygon are curved. Although it is said that it is an ellipse, the planar shape of this mold is preferably an octagon or more and 32 or less and a polygon whose number of corners is a multiple of four, particularly an octagon, a dodecagon, A hexagonal shape and an icosahedron shape are preferable. More preferable as the planar shape of the mold is a figure in which all corners of these polygons are curved. In this way, a perforated wiring substrate 33 can be obtained.
The size and shape of the opening 32 is such that a predetermined gap is generated with respect to the semiconductor device 18 before the insulating base 31 is thermocompression-bonded. The size and shape in plan view are set so as to be in close contact with the periphery of the device 18. For example, the area occupied by the semiconductor device 18 is 1.01 to 1.05 times.

(3) Semiconductor Device Mounted Inner Layer Base Material As shown in FIG. 7A, the semiconductor device 18 is disposed at a predetermined position on the solid inner layer base material 26 obtained as described above. A thermocompression bonding jig 28 with a built-in heater is placed, and the thermocompression bonding jig 28 is pressed down so that the semiconductor device 18 is thermocompression bonded to the insulating substrate 21. Thermocompression bonding is performed, for example, under conditions of temperature: 180 to 200 ° C. and pressure: 10 to 100 kg / cm ² .

  By this thermocompression bonding, as shown in FIG. 7B, the terminal 19 of the semiconductor device 18 is electrically connected to the conductive material 14 of the insulating base material 21, that is, the conductive circuit, and the semiconductor device 18 and the insulating base material are connected. Thus, a semiconductor device mounting inner layer base material 29 can be obtained.

(4) Multilayer Wiring Board with Built-in Semiconductor Device First, as shown in FIG. 8, in a laminated jig 41 with a built-in heater, a cushion film 42 having elasticity and releasability, a semiconductor device mounting inner layer base material 29, a hole is formed. The wiring substrate 33, the solid inner layer substrate 26, the insulating substrate 21, and the cushion film 42 having elasticity and releasability are stacked in this order.

Subsequently, the pressing jig 43 is pressed down and heated to apply thermocompression to the semiconductor device mounting inner layer base material 29 to the insulating base material 21.
An example of the conditions for thermocompression bonding is as follows: temperature: 220 to 300 ° C., pressure: 10 to 60 kg / cm ² .
Thus, by applying thermocompression bonding, the respective base materials are fused and integrated, and the semiconductor device built-in multilayer wiring board of the present invention can be obtained.

  Next, examples and comparative examples of the semiconductor device (IC chip) built-in multilayer wiring board 40 of the present embodiment will be described.

(Experimental example 1)
In Example 1, the perforated wiring substrate 3 in which the planar shape of the opening 16 is an octagon was used. In Comparative Example 1, the perforated wiring base material 3 in which the planar shape of the opening 16 is a quadrangle was used. These perforated wiring base material 3 and a semiconductor device (IC chip) having a square planar shape were thermocompression bonded and fused and integrated.
In Experimental Example 1, as shown in FIG. 9, one corner of a rectangular semiconductor device (IC chip) has a coordinate of 4.115 in the X-axis direction and a coordinate of 3.045 in the Y-axis direction. have. And the coordinate change of three nodes (node) of the perforated wiring base material 3 as shown in FIG. 9 was measured. The results are shown in Table 1.

  According to Table 1, in Example 1, the difference between the space formed between the resin of the perforated wiring substrate 3 and the semiconductor device (IC chip) is small in the corners and sides of the object. In Example 1, it was found that the deformation amount of the resin of the perforated wiring base material 3 is large at the side portions and small at the corner portions. Thereby, it turns out that the direction of Example 1 is more suitable as a wiring base material.

(Experimental example 2)
In Example 2, the perforated wiring substrate 3 in which the planar shape of the opening 16 is an octagon was used. In Example 3, the perforated wiring substrate 3 having a shape in which all the corners 17 of the octagon in Example 2 are arcs was used as the planar shape of the opening 16. In Comparative Example 2, a perforated wiring base material 3 in which the planar shape of the opening 16 is a quadrangle was used. These perforated wiring base materials 3 were thermocompression bonded to change the shape. In these examples, nothing was stored in the opening. The results are shown in FIGS. FIGS. 10 to 12 each show the shape near one opening 16 of the perforated wiring substrate after heating. The broken lines in each figure indicate the perforated wiring substrate before heating. Represents the shape. In the figure, the numbers with circles represent the deformation amount of the resin, and the larger the number, the larger the deformation amount. FIG. 10 is for Example 2, FIG. 11 is for Example 3, and FIG. 12 is for Comparative Example 2.

In Example 1 of FIG. 10 and Example 2 of FIG. 11, the shape of the corner of the opening is close to a right angle, whereas in Comparative Example 1 of FIG. 12, the shape of the corner of the opening is sharper. I understand that. This is presumed to be due to the fact that the amount of deformation of the thermoplastic resin is smaller at the corners of the perforated wiring substrate 3 than at the sides.
Further, comparing Example 1 in FIG. 10 with Example 2 in FIG. 11, it can be seen that the shape of the corner can be made closer to a right angle by providing a curve at all corners of the opening.

  According to the perforated wiring substrate 3 of this embodiment and the semiconductor device built-in multilayer wiring substrate using the same, the semiconductor device mounting inner layer base material 4, the perforated wiring base material 3, the solid inner layer base material 2, When the uppermost wiring substrate 1 is sequentially laminated, thermocompression-bonded, and fused and integrated, the planar shape of the opening 16 formed to accommodate the semiconductor device has five or more recessed portions 10. Since there is no figure, for example, a polygon more than a pentagon, a figure in which all the corners 17 of the polygon are curved, an elliptical shape, etc., the perforated wiring substrate 3 is used. During the process of laminating, thermocompression bonding, and fusion integration, the thermoplastic resin constituting the perforated wiring substrate 3 changes its shape and fills the space between the semiconductor device 18 and the semiconductor device 18. The space between the corners 30 and the sides of the semiconductor device 18 is reduced to the same extent. By the pressure of the thermoplastic resin is equalized with respect to the semiconductor device 18. Therefore, it is possible to prevent wiring distortion and deformation from occurring between the semiconductor device itself and between the semiconductor device and the wiring base material, and therefore, wiring defects such as open / short (O / S), dimensional deviation, etc. Can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitch can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate can be improved, and the reliability of the semiconductor device and the wiring substrate can be improved.

  In addition, according to the perforated wiring base material 3 and the semiconductor device built-in multilayer wiring substrate using the same according to the present embodiment, the semiconductor device mounting inner layer base material 4, the perforated wiring base material 3, the solid inner layer base material 2. When the uppermost wiring substrate 1 is sequentially laminated, thermocompression-bonded, and fused and integrated, the semiconductor device 18 having a polygonal planar shape and the wiring substrate on which the semiconductor device 18 is mounted Since the gap 20 with the opening 16 formed so as to accommodate the semiconductor device in the perforated wiring base material 3 arranged adjacently is minimized at the corner 30 of the semiconductor device, In the process in which the thermoplastic resin constituting the perforated wiring substrate 3 changes shape and fills the space with the semiconductor device 18 during thermocompression bonding and fusion integration, the semiconductor device 18 and the thermoplastic resin The space between the corners 30 and the sides of the semiconductor device 18 is the same. By smaller every time, the pressure of the thermoplastic resin is equalized with respect to the semiconductor device 18. Therefore, it is possible to prevent the wiring distortion or deformation from occurring between the semiconductor device itself or between the semiconductor device and the wiring base material. Therefore, wiring defects such as open / short (O / S), dimensional deviation, etc. Can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitches can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate can be improved, and the reliability of the semiconductor device and the wiring substrate can be improved.

  According to the method for manufacturing a semiconductor device built-in multilayer wiring board of this embodiment, the semiconductor device mounting inner layer base material 4, the perforated wiring base material 3, the solid inner layer base material 2, and the uppermost wiring base material 1 are sequentially formed. When laminating, thermocompression bonding, and fusion integration, the planar shape of the opening 16 formed to accommodate the semiconductor device is a figure that does not have five or more recesses 10, for example, a pentagon or more Since the perforated wiring base material 3 which is either a square, a figure in which all the corners 17 of the polygon are curved, or an ellipse is used, lamination, thermocompression bonding and fusion integration Sometimes, the space between the semiconductor device 18 and the thermoplastic resin becomes the semiconductor device 18 in the process in which the shape of the thermoplastic resin constituting the perforated wiring substrate 3 changes and fills the space between the semiconductor device 18 and the semiconductor device 18. By reducing the size of the corner 30 and the side to the same extent, The pressure of the thermoplastic resin is equalized for 18. Therefore, it is possible to prevent wiring distortion and deformation from occurring between the semiconductor device itself and between the semiconductor device and the wiring base material, and therefore, wiring defects such as open / short (O / S), dimensional deviation, etc. Can be prevented. Further, since the formation of voids is prevented, a decrease in moisture absorption reflow heat resistance can be prevented, and finer wiring pitch can be achieved in a high-density and ultra-small three-dimensional mounting module. As a result, the stability of the initial characteristics and operation characteristics of the semiconductor device and the wiring substrate can be improved, and the reliability of the semiconductor device and the wiring substrate can be improved.

It is sectional drawing which shows the perforated wiring base material of one Embodiment of this invention. It is a top view which shows the perforated wiring base material of one Embodiment of this invention. It is sectional drawing which shows the semiconductor device built-in multilayer wiring board of one Embodiment of this invention. It is process drawing which shows the manufacturing method of the multilayer wiring board with a built-in semiconductor device of one Embodiment of this invention. It is process drawing which shows the manufacturing method of the uppermost wiring base material which concerns on one Embodiment of this invention, and a solid inner layer base material. It is a process figure showing a manufacturing method of a perforated wiring substrate concerning one embodiment of the present invention. It is a process figure showing a manufacturing method of a semiconductor device loading inner layer base material concerning one embodiment of the present invention. It is process drawing which shows the manufacturing method of the multilayer wiring board with a built-in semiconductor device of one Embodiment of this invention. It is a figure which shows the state before the shape change of the perforated wiring base material based on implementation of this invention. It is a figure which shows the state of the shape change of the perforated wiring base material which concerns on implementation of this invention. It is a figure which shows the state of the shape change of the perforated wiring base material which concerns on implementation of this invention. It is a figure which shows the state of the shape change of the conventional perforated wiring base material.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Top layer wiring base material 2 Solid inner layer base material 3 Holed wiring base material 4 Semiconductor device mounting inner layer base material 10 Recessed part 11 Insulating base material 12 Groove part 13 Via hole 14 Conductive material 15 Insulating base material 16 Opening part DESCRIPTION OF SYMBOLS 17 Corner | angular part 18 Semiconductor device 20 Crevice 21 Insulating base material 26 Solid inner-layer base material 29 Semiconductor device mounting inner-layer base material 30 Semiconductor device corner | angular part 31 Insulating base material 32 Opening part 33 Perforated wiring base material

Claims (7)

A wiring substrate in which conductor wiring is formed on an insulating substrate made of a thermoplastic resin composition, and the planar shape of an opening formed for housing a semiconductor device is a polygon that is a pentagon or more, the polygon A perforated wiring board for a multilayer wiring board with a built- in semiconductor device , wherein all of the corners of the circuit board are in the shape of a curve or an ellipse, and do not have five or more recesses. Wood . The thermoplastic resin composition includes a crystalline thermoplastic resin composition having a crystal melting peak temperature of 260 ° C. or higher, an amorphous thermoplastic resin composition having a glass transition temperature of 260 ° C. or higher, and a liquid crystal transition temperature of 260 ° C. The perforated wiring base material for a multilayer wiring board with a built-in semiconductor device according to claim 1, wherein the main component is at least one selected from the above liquid crystal polymers. A plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition are laminated, and a semiconductor device is mounted on one or two or more wiring base materials among the plurality of wiring base materials. An opening for accommodating the semiconductor device is formed in the wiring substrate disposed adjacent to the wiring substrate on which the semiconductor device is mounted, and these wiring substrates are bonded to each other by thermocompression bonding. In a multilayer wiring board with a built-in semiconductor device formed by fusion,
The planar shape of the opening is a polygon that is a pentagon or more, a figure in which all corners of the polygon are curved, or an ellipse, and does not have five or more indentations. A multilayer wiring board with a built-in semiconductor device. A plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition are laminated, and a semiconductor device is mounted on one or two or more wiring base materials among the plurality of wiring base materials. An opening for accommodating the semiconductor device is formed in the wiring substrate disposed adjacent to the wiring substrate on which the semiconductor device is mounted, and these wiring substrates are bonded to each other by thermocompression bonding. In a multilayer wiring board with a built-in semiconductor device formed by fusion,
A multilayer wiring board with a built-in semiconductor device, wherein when the wiring substrates are laminated, a gap between the semiconductor device having a polygonal planar shape and the opening is minimum at the corner of the semiconductor device. The thermoplastic resin composition includes a crystalline thermoplastic resin composition having a crystal melting peak temperature of 260 ° C. or higher, an amorphous thermoplastic resin composition having a glass transition temperature of 260 ° C. or higher, and a liquid crystal transition temperature of 260 ° C. semiconductor device embedded multilayer wiring board according to claim 3 or 4, wherein a main component at least one selected from a liquid crystal polymer is higher. A plurality of wiring base materials in which conductor wiring is formed on an insulating base material made of a thermoplastic resin composition are laminated, and a semiconductor device is mounted on one or two or more wiring base materials among the plurality of wiring base materials. The wiring substrate that is mounted and disposed adjacent to the wiring substrate on which the semiconductor device is mounted has an opening for housing the semiconductor device, and the wiring substrates are thermocompression bonded together. A method of manufacturing a multilayer wiring board with a built-in semiconductor device that is fused and integrated by
A wiring substrate for mounting a semiconductor device, and an opening for housing the semiconductor device is formed in a part of the substrate, and a planar shape of the opening is a pentagon or more polygon, all of the polygons Perforated wiring base material for a multilayer wiring board with a built-in semiconductor device that is either a figure with a curved corner or an ellipse and does not have five or more recesses , and other wiring bases Make the material,
Next, the semiconductor device is mounted on the wiring substrate for mounting the semiconductor device,
A method of manufacturing a multilayer wiring board with a built-in semiconductor device, wherein these wiring substrates are laminated and fused and integrated by thermocompression bonding. Temperature for fusing integrating a plurality of said wiring substrate by thermocompression bonding, according to claim 6, characterized in that the glass transition temperature or higher, or liquid crystal transition temperature higher than the wiring substrate for the semiconductor device mounted A method of manufacturing a multilayer wiring board with a built-in semiconductor device.

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