JP4138293B2 - Silicon device manufacturing method and ink jet recording head manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a silicon device having a thin film pattern on a silicon substrate, and in particular, a part of a pressure generating chamber communicating with a nozzle opening for discharging ink droplets is constituted by a diaphragm, and the surface of the diaphragm is The present invention is suitable for application to an ink jet recording head in which a piezoelectric layer is formed and ink droplets are ejected by displacement of the piezoelectric layer.
[0002]
[Prior art]
A part of the pressure generation chamber communicating with the nozzle opening for discharging ink droplets is constituted by a vibration plate, and the vibration plate is deformed by a piezoelectric element to pressurize the ink in the pressure generation chamber to discharge ink droplets from the nozzle opening. Two types of ink jet recording heads have been put into practical use: those using a longitudinal vibration mode piezoelectric actuator that extends and contracts in the axial direction of the piezoelectric element, and those using a flexural vibration mode piezoelectric actuator.
[0003]
The former can change the volume of the pressure generation chamber by bringing the end face of the piezoelectric element into contact with the vibration plate, and it is possible to manufacture a head suitable for high-density printing, while the piezoelectric element is arranged in an array of nozzle openings. There is a problem that the manufacturing process is complicated because a difficult process of matching the pitch into a comb-like shape and an operation of positioning and fixing the cut piezoelectric element in the pressure generating chamber are necessary.
[0004]
On the other hand, the latter can flexibly vibrate, although a piezoelectric element can be built on the diaphragm by a relatively simple process of sticking a green sheet of piezoelectric material according to the shape of the pressure generation chamber and firing it. There is a problem that a certain amount of area is required for the use of, and high-density arrangement is difficult.
[0005]
On the other hand, in order to eliminate the inconvenience of the latter recording head, a uniform piezoelectric material layer is formed by a film forming technique over the entire surface of the diaphragm as seen in Japanese Patent Laid-Open No. 5-286131. A material in which a piezoelectric layer is formed so that a material layer is cut into a shape corresponding to a pressure generation chamber by a lithography method and is independent for each pressure generation chamber has been proposed.
[0006]
This eliminates the need to affix the piezoelectric element to the diaphragm, and not only enables the piezoelectric element to be densely formed by a precise and simple technique called lithography, but also reduces the thickness of the piezoelectric element. There is an advantage that it can be made thin and can be driven at high speed.
[0007]
[Problems to be solved by the invention]
When the piezoelectric elements are arranged at high density in this way, it is necessary to ensure the rigidity of the partition walls defining the pressure generation chamber by relatively reducing the thickness of the flow path forming substrate. However, since the flow path forming substrate is formed using, for example, a silicon wafer having a diameter of about 6 to 12 inches, if the thickness of the silicon wafer is reduced, cracks and the like are likely to occur and handling is difficult. There is a problem.
[0008]
In addition, a method has been proposed in which a sacrificial wafer is bonded to one surface of a silicon wafer and a piezoelectric element or the like is formed in a state in which the rigidity of the silicon wafer is ensured. There is a problem of low efficiency.
[0009]
Furthermore, since a sacrificial wafer is required for each silicon wafer, there is a problem that the cost increases.
[0010]
Such a problem exists not only in the ink jet recording head but also in other silicon devices having a thin film pattern on a silicon substrate.
[0011]
In view of such circumstances, it is an object of the present invention to provide a method for manufacturing a silicon device and a method for manufacturing an ink jet recording head that can efficiently use a sacrificial wafer and reduce costs.
[0012]
[Means for Solving the Problems]
According to a first aspect of the present invention for solving the above-described problem, in a method for manufacturing a silicon device having a thin film pattern on a silicon substrate, a protruding portion that protrudes more than the other portion is formed on a part of one surface of the sacrificial wafer. A step of bonding the surface of the sacrificial wafer on the protruding portion side to the surface of the silicon wafer via a bonding layer, a step of forming the thin film pattern on the silicon wafer, and removing the bonding layer by etching. And a step of peeling the sacrificial wafer from the silicon wafer.
[0013]
In the first aspect, since only the protruding portion of the sacrifice wafer is bonded to the silicon wafer, the sacrifice wafer can be peeled from the silicon wafer in a short time by removing the bonding layer. Moreover, since the peeled sacrificial wafer can be reused, the manufacturing cost can be reduced.
[0014]
A second aspect of the present invention is the method for manufacturing a silicon device according to the first aspect, wherein the bonding layer is made of silicon dioxide.
[0015]
In the second aspect, the bonding layer can be formed relatively easily and can be removed relatively easily.
[0016]
According to a third aspect of the present invention, in the first or second aspect, the projecting portion is provided over a peripheral portion of the sacrificial wafer.
[0017]
In the third aspect, the rigidity of the silicon wafer is reliably improved by the sacrificial wafer.
[0018]
According to a fourth aspect of the present invention, there is provided the silicon device manufacturing method according to the third aspect, wherein the concave portions defined by the protruding portions of the sacrificial wafer are in a lattice shape.
[0019]
In the fourth aspect, since the bonding area between the silicon wafer and the sacrificial wafer is increased, the rigidity of the silicon wafer is remarkably improved.
[0020]
According to a fifth aspect of the present invention, in the third or fourth aspect, a through hole communicating with a space defined between the sacrificial wafer and the silicon wafer is provided on the other surface side of the sacrificial wafer, In the step of peeling the sacrificial wafer, the silicon device manufacturing method is characterized in that an etching agent is supplied into the space from the through hole and the bonding layer is etched from the space.
[0021]
In the fifth aspect, the bonding layer can be removed in a shorter time, and the manufacturing efficiency is significantly improved.
[0022]
According to a sixth aspect of the present invention, in the method according to any one of the first to fifth aspects, the silicon wafer is made of single crystal silicon.
[0023]
In the sixth aspect, the silicon wafer can be processed with high accuracy by etching.
[0024]
According to a seventh aspect of the present invention, there is provided a flow path forming substrate in which a pressure generating chamber communicating with the nozzle opening is defined, and a pressure plate disposed on the flow path forming substrate via a vibration plate to apply pressure to the pressure generating chamber. In a method of manufacturing an ink jet recording head comprising a piezoelectric element to be applied, a step of forming a protruding portion protruding from a portion of one surface of a sacrificial wafer from the other portion, and a step of forming the sacrificial wafer on the surface of a silicon wafer Bonding the surface on the protrusion side via a bonding layer; forming the diaphragm and the piezoelectric element on the silicon wafer; and removing the bonding layer by etching to remove the sacrificial wafer from the silicon An ink jet recording head manufacturing method comprising: a step of peeling from a wafer; and a step of dividing the silicon wafer into a plurality of flow path forming substrates.
[0025]
In the seventh aspect, since only the protruding portion of the sacrificial wafer is bonded to the silicon wafer, the sacrificial wafer can be peeled from the silicon wafer in a short time by removing the bonding layer. Moreover, since the peeled sacrificial wafer can be reused, the manufacturing cost can be reduced.
[0026]
According to an eighth aspect of the present invention, there is provided an ink jet recording head manufacturing method according to the seventh aspect, wherein the bonding layer is made of silicon dioxide.
[0027]
In the eighth aspect, the bonding layer can be formed relatively easily and can be removed relatively easily.
[0028]
According to a ninth aspect of the present invention, there is provided an ink jet recording head manufacturing method according to the eighth aspect, wherein the protrusion is provided over a peripheral edge of the sacrificial wafer.
[0029]
In the ninth aspect, since the bonding area between the silicon wafer and the sacrificial wafer is widened, the rigidity of the silicon wafer is remarkably improved.
[0030]
A tenth aspect of the present invention is the method of manufacturing an ink jet recording head according to the ninth aspect, wherein the concave portions defined by the protruding portions of the sacrificial wafer have a lattice shape.
[0031]
In the tenth aspect, since the bonding area between the silicon wafer and the sacrificial wafer is widened, the rigidity of the silicon wafer is remarkably improved.
[0032]
According to an eleventh aspect of the present invention, in the ninth or tenth aspect, a through hole communicating with a space defined between the sacrificial wafer and the silicon wafer is provided on the other surface side of the sacrificial wafer, In the step of peeling the sacrificial wafer, an etching agent is supplied from the through hole into the space, and the bonding layer is etched from the space.
[0033]
In the eleventh aspect, the bonding layer can be removed in a shorter time, and the production efficiency is significantly improved.
[0034]
According to a twelfth aspect of the present invention, in any one of the seventh to eleventh aspects, a sealing substrate having a sealing portion for sealing the piezoelectric element on the silicon wafer after the step of forming the piezoelectric element. The method of manufacturing an ink jet recording head, further comprising the step of bonding the ink jet recording head.
[0035]
In the twelfth aspect, since the rigidity of the silicon wafer is remarkably improved by the sealing substrate, the silicon wafer can be easily handled even if the sacrificial wafer is removed.
[0036]
A thirteenth aspect of the present invention is the ink jet recording head according to any one of the seventh to twelfth aspects, wherein the silicon wafer is made of single crystal silicon, and the piezoelectric element is formed by a thin film and a lithography method. It is in the manufacturing method.
[0037]
In the thirteenth aspect, an ink jet recording head having high-density nozzle openings can be manufactured in large quantities and relatively easily.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail based on embodiments.
[0039]
(Embodiment 1)
1 is an exploded perspective view showing an outline of an ink jet recording head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG.
[0040]
As shown in the figure, the flow path forming substrate 10 is made of a silicon single crystal substrate having a plane orientation (110) in the present embodiment, and one surface thereof is made of silicon dioxide previously formed by thermal oxidation, and has a thickness of 1 to 2 μm. The elastic film 50 is formed.
[0041]
In the flow path forming substrate 10, pressure generation chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction by anisotropically etching a silicon single crystal substrate from one surface side thereof. Further, on the outer side in the longitudinal direction, a communication portion 13 is formed which communicates with a reservoir portion 32 of the sealing base 30 described later. The communication portion 13 is in communication with each other at one end in the longitudinal direction of each pressure generating chamber 12 via an ink supply path 14.
[0042]
Here, the anisotropic etching is performed by utilizing the difference in etching rate of the silicon single crystal substrate. For example, in this embodiment, when a silicon single crystal substrate is immersed in an alkaline solution such as KOH, the first (111) plane perpendicular to the (110) plane is gradually eroded, and the first (111) plane. And a second (111) plane that forms an angle of about 70 degrees with the (110) plane and an angle of about 35 degrees appears, and the (111) plane is compared with the etching rate of the (110) plane. This is performed using the property that the etching rate is about 1/180. By this anisotropic etching, precision processing can be performed based on the parallelogram depth processing formed by two first (111) surfaces and two oblique second (111) surfaces. The pressure generating chambers 12 can be arranged with high density.
[0043]
In the present embodiment, the long side of each pressure generating chamber 12 is formed by the first (111) plane and the short side is formed by the second (111) plane. The pressure generation chamber 12 is formed by etching until it substantially passes through the flow path forming substrate 10 and reaches the elastic film 50. Here, the amount of the elastic film 50 that is affected by the alkaline solution for etching the silicon single crystal substrate is extremely small. In addition, each ink supply path 14 communicating with one end of each pressure generation chamber 12 is formed shallower than the pressure generation chamber 12, and the flow path resistance of the ink flowing into the pressure generation chamber 12 is kept constant. That is, the ink supply path 14 is formed by etching the silicon single crystal substrate halfway in the thickness direction (half etching). Half etching is performed by adjusting the etching time.
[0044]
As the thickness of the flow path forming substrate 10 on which such a pressure generation chamber 12 and the like are formed, it is preferable to select an optimum thickness in accordance with the density at which the pressure generation chamber 12 is disposed. For example, when the pressure generating chambers 12 are arranged at about 180 (180 dpi) per inch, the thickness of the flow path forming substrate 10 is preferably about 180 to 280 μm, more preferably about 220 μm. is there. For example, when the pressure generating chambers 12 are arranged at a relatively high density of about 360 dpi, the thickness of the flow path forming substrate 10 is preferably 100 μm or less. This is because the arrangement density can be increased while maintaining the rigidity of the partition wall 11 between the adjacent pressure generation chambers 12. In this embodiment, since the arrangement density of the pressure generating chambers 12 is about 360 dpi, the thickness of the flow path forming substrate 10 is about 70 μm.
[0045]
As shown in FIG. 3, a plurality of such flow path forming substrates 10 are integrally formed on a silicon wafer 100 made of a silicon single crystal substrate, and will be described later in detail. After the generation chamber 12 and the like are formed, the plurality of flow path forming substrates 10 are obtained by dividing.
[0046]
Further, a nozzle plate 20 having a nozzle opening 21 communicating with the side opposite to the ink supply path 14 of each pressure generating chamber 12 on the opening surface side of the flow path forming substrate 10 is an adhesive, a heat-welded film, or the like. It is fixed through.
[0047]
On the other hand, on the elastic film 50 opposite to the opening surface of the flow path forming substrate 10, a lower electrode film 60 having a thickness of, for example, about 0.2 μm and a piezoelectric layer having a thickness of, for example, about 1 μm. 70 and an upper electrode film 80 having a thickness of, for example, about 0.1 μm are laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator.
[0048]
Further, on the piezoelectric element 300 side of the flow path forming substrate 10, there is a sealing substrate 30 having a piezoelectric element holding portion 31 capable of sealing the space while ensuring a space that does not hinder the movement of the piezoelectric element 300. The piezoelectric element 300 is sealed in the piezoelectric element holding portion 31.
[0049]
Further, the sealing substrate 30 is provided with a reservoir portion 32 that constitutes at least a part of a reservoir 90 that becomes a common ink chamber of each pressure generating chamber 12, and the reservoir portion 32 is formed with a flow path as described above. A reservoir 90 is formed which communicates with the communicating portion 13 of the substrate 10 and serves as a common ink chamber for the pressure generating chambers 12.
[0050]
Note that such an ink jet recording head takes in ink from an external ink supply means (not shown), fills the interior from the reservoir 90 to the nozzle opening 21, and then externally in accordance with a recording signal from a drive circuit (not shown). By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 via the wiring, the elastic film 50, the lower electrode film 60, and the piezoelectric layer 70 are bent and deformed. The pressure in each pressure generating chamber 12 is increased, and ink droplets are ejected from the nozzle openings 21.
[0051]
Hereinafter, a method for manufacturing the ink jet recording head according to the present embodiment will be described. 4 is a perspective view schematically showing the sacrificial wafer, and FIGS. 5 and 6 are cross-sectional views in the width direction of the pressure generation chamber 12 of the silicon wafer 100. FIG.
[0052]
First, as shown in FIG. 4A, a protruding portion 111 protruding from the other portion is formed on a part of one surface of a sacrificial wafer 110 made of a silicon single crystal substrate. That is, the recess 112 is formed in a region other than the region that becomes the protrusion 111 on one surface of the sacrificial wafer 110. For example, in the present embodiment, the protrusion 111 is formed on the peripheral edge of the sacrificial wafer 110 by providing the recess 112 in the center of the sacrificial wafer 110.
[0053]
Here, the sacrificial wafer 110 is for ensuring the rigidity of the silicon wafer 100 when the piezoelectric element 300 and the like are formed. That is, in this embodiment, the thickness of the silicon wafer 100 is relatively thin, about 70 μm, and is difficult to handle. Therefore, the sacrificial wafer 110 is bonded to the silicon wafer 100 to ensure the rigidity of the silicon wafer 100 and relatively. It can be handled easily. The thickness of the sacrificial wafer 110 is not particularly limited as long as the rigidity of the silicon wafer 100 can be secured, but in the present embodiment, the thickness is set to 200 to 300 μm.
[0054]
Next, as shown in FIG. 4B, the surface on the protruding portion 111 side of the sacrificial wafer 110 is bonded to one surface of the silicon wafer 100 to be a plurality of flow path forming substrates 10 via a bonding layer 120. That is, only the protrusion 111 at the peripheral edge of the sacrificial wafer 110 is bonded to the silicon wafer 100 via the bonding layer 120. For this reason, a predetermined space is secured between the silicon wafer 100 and the sacrificial wafer 110 by the recess 112 of the sacrificial wafer 110.
[0055]
The bonding layer 120 is made of, for example, silicon dioxide. In this embodiment, the bonding layer 120 is formed by thermally oxidizing the surface of the sacrificial wafer 110 on the protruding portion 111 side.
[0056]
Next, as shown in FIG. 5A, a silicon wafer 100 made of a silicon single crystal substrate and serving as a plurality of flow path forming substrates 10 is thermally oxidized in a diffusion furnace at about 1100 ° C. Then, an elastic film 50 made of silicon dioxide is formed.
[0057]
Next, as shown in FIG. 5B, a lower electrode film 60 is formed on the elastic film 50 by sputtering. As a material of the lower electrode film 60, platinum (Pt) or the like is suitable. This is because a piezoelectric layer 70 described later formed by sputtering or sol-gel method needs to be crystallized by firing at a temperature of about 600 to 1000 ° C. in an air atmosphere or an oxygen atmosphere after the film formation. Because. That is, the material of the lower electrode film 60 must be able to maintain conductivity at such a high temperature and in an oxidizing atmosphere, particularly when lead zirconate titanate (PZT) is used as the piezoelectric layer 70. It is desirable that the change in conductivity due to diffusion of lead oxide is small, and platinum is preferable for these reasons.
[0058]
Next, as shown in FIG. 5C, a piezoelectric layer 70 is formed. The piezoelectric layer 70 preferably has crystals oriented. For example, in the present embodiment, a so-called sol-gel method is obtained in which a so-called sol in which a metal organic material is dissolved and dispersed in a catalyst is applied and dried to be gelled, and further baked at a high temperature to obtain a piezoelectric layer 70 made of metal oxide Thus, the piezoelectric layer 70 in which the crystals are oriented is obtained. As a material of the piezoelectric layer 70, a lead zirconate titanate-based material is suitable when used for an ink jet recording head. In addition, the film-forming method of this piezoelectric material layer 70 is not specifically limited, For example, you may form by sputtering method.
[0059]
Furthermore, after forming a lead zirconate titanate precursor film by a sol-gel method or a sputtering method, a method of crystal growth at a low temperature by a high-pressure treatment method in an alkaline aqueous solution may be used.
[0060]
In any case, the piezoelectric layer 70 thus formed has crystals preferentially oriented unlike the bulk piezoelectric body, and in this embodiment, the piezoelectric layer 70 is formed in a columnar shape. Has been. Note that the preferential orientation refers to a state in which the orientation direction of the crystal is not disordered and a specific crystal plane is oriented in a substantially constant direction. A columnar thin film refers to a state in which substantially cylindrical crystals are aggregated over the surface direction with the central axis substantially coincided with the thickness direction to form a thin film. Of course, it may be a thin film formed of preferentially oriented granular crystals. Note that the thickness of the piezoelectric layer manufactured in this way in the thin film process is generally 0.2 to 5 μm.
[0061]
Next, as shown in FIG. 5D, an upper electrode film 80 is formed. The upper electrode film 80 only needs to be a highly conductive material, and many metals such as aluminum, gold, nickel, and platinum, conductive oxides, and the like can be used. In this embodiment, the platinum film is formed by sputtering.
[0062]
Next, as shown in FIG. 6A, the piezoelectric element 300 is patterned by etching only the piezoelectric layer 70 and the upper electrode film 80.
[0063]
Next, as shown in FIG. 6B, a sealing substrate forming material 130 to be a sealing substrate 30 having a piezoelectric element holding portion 31 for sealing the piezoelectric element 300 is bonded to the piezoelectric element 300 side of the silicon wafer 100. To do. Since the sealing substrate 30 has a thickness of about 400 μm, for example, the rigidity of the silicon wafer 100 is significantly improved by bonding the sealing substrate 30.
[0064]
Next, as shown in FIG. 6C, the bonding layer 120 interposed between the silicon wafer 100 and the sacrificial wafer 110 is etched from the outer peripheral surface side of the sacrificial wafer 110 with an etchant such as sodium fluoride, for example. Then, the sacrificial wafer 110 is peeled off from the silicon wafer 100.
[0065]
Here, in the sacrificial wafer 110 of this embodiment, only the protruding portion 111 is bonded to the silicon wafer 100 as described above. That is, since the bonding layer 120 is provided only on a part of the bonding surface of the sacrificial wafer 110 with the silicon wafer 100, it can be removed in a relatively short time.
[0066]
Therefore, the sacrificial wafer 110 can be peeled from the silicon wafer 100 in a relatively short time, and the manufacturing efficiency can be improved. Further, since the sacrificial wafer 110 thus peeled can be reused, the manufacturing cost can be significantly reduced.
[0067]
Further, in this embodiment, the sacrificial wafer 110 is provided with a protruding portion 111 at the periphery thereof and is bonded to the periphery of the silicon wafer 100. Therefore, the rigidity of the silicon wafer 100 is reliably improved, and handling becomes easy.
[0068]
Note that when the sacrificial wafer 110 is peeled from the silicon wafer 100, the sealing substrate forming material 130 is bonded to the silicon wafer 100 to ensure a predetermined rigidity. 100 can be handled easily.
[0069]
After that, a mask pattern 140 is formed on the silicon wafer 100, and anisotropic etching using the above-described alkaline solution is performed through the mask pattern 140, so that silicon as shown in FIG. A pressure generation chamber 12 and the like are formed on the wafer 100.
[0070]
Further, a nozzle plate 20 having a nozzle opening 21 is bonded to the surface of the silicon wafer 100 opposite to the sealing substrate 30 so that the silicon wafer 100 and the like have a single chip-size flow path as shown in FIG. The ink jet recording head according to the present embodiment is obtained by dividing each of the formation substrates 10.
[0071]
(Embodiment 2)
7 and 8 are diagrams showing a manufacturing process of the ink jet recording head according to the second embodiment. FIG. 7 is a schematic perspective view of the sacrificial wafer, and FIG. 8 is a width direction of the pressure generation chamber 12 of the silicon wafer. FIG.
[0072]
In the manufacturing process of the present embodiment, first, as shown in FIG. 7A, a protrusion 111A is formed by providing a lattice-shaped recess 112A on one surface side of the sacrificial wafer 110A. At the same time, a through hole 113 communicating with the recess 112A is formed on the side opposite to the protrusion 111A of the sacrificial wafer 110A.
[0073]
Next, as shown in FIG. 7B, a bonding layer 120 is formed on the surface of the sacrificial wafer 110 </ b> A on the protruding portion 111 </ b> A side, and the silicon wafer 100 and the sacrificial wafer 110 </ b> A are bonded via the bonding layer 120.
[0074]
By using the sacrificial wafer 110A of this embodiment, the bonding area of the sacrificial wafer 110A with the silicon wafer 100 is increased, so that the rigidity of the silicon wafer 100 is remarkably improved, and cracks and the like are generated in the silicon wafer 100. And can be handled relatively easily.
[0075]
Next, as in the first embodiment, the elastic film 50, the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80 are sequentially formed, and then the piezoelectric element 300 is formed by patterning. Further, a sealing substrate forming material 130 to be the sealing substrate 30 having the piezoelectric element holding portion 31 for sealing the piezoelectric element 300 is joined to the piezoelectric element 300 side of the silicon wafer 100 (FIGS. 5A to 6 (). b)).
[0076]
Next, as shown in FIG. 8A, the bonding layer 120 interposed between the sacrificial wafer 110A and the silicon wafer 100 is removed by etching with an etchant such as sodium fluoride, and the sacrificial wafer. 110A is peeled from the silicon wafer 100. At this time, in this embodiment, the bonding layer 120 is etched from the outer peripheral surface side of the sacrificial wafer 110A, and an etching agent is supplied into the recess 112A through the through hole 113 to etch the bonding layer 120 also from the recess 112A. To do.
[0077]
Thus, since the bonding layer 120 can be removed in a relatively short time by etching the bonding layer 120 also from the inside of the recess 112A of the sacrifice wafer 110A, the bonding area between the sacrifice wafer 110A and the silicon wafer 100 is increased. Even if it is relatively large, the sacrificial wafer 110A can be peeled off in a short time.
[0078]
In addition, the sacrificial wafer 110A thus peeled off can be reused, so that the manufacturing cost can be significantly reduced.
[0079]
After that, as in the first embodiment, the silicon wafer 100 is anisotropically etched to form the pressure generation chamber 12 and the like, and after joining the nozzle plate 20 to the silicon wafer 100, the silicon wafer 100 and the like are divided. In this embodiment, the ink jet recording head is used.
[0080]
(Other embodiments)
While the embodiments of the present invention have been described above, the basic configuration of the ink jet recording head is not limited to that described above.
[0081]
For example, in the above-described embodiment, the ink jet recording head has been described as an example. However, the present invention is of course not limited to this, and the present invention is also applicable to the manufacture of a silicon device having a thin film pattern on a silicon substrate such as a semiconductor. be able to.
[0082]
【The invention's effect】
As described above, in the manufacturing method of the present invention, the protruding portion of the sacrificial wafer is bonded to the silicon wafer via the bonding layer, and the bonding layer is removed by etching. It can be peeled off in a short time, and the production efficiency can be improved. Moreover, since the peeled sacrificial wafer can be reused, the manufacturing cost can be reduced.
[Brief description of the drawings]
FIG. 1 is a perspective view schematically showing an ink jet recording head according to a first embodiment of the invention.
FIGS. 2A and 2B are a plan view and a cross-sectional view illustrating a main part of the ink jet recording head according to the first embodiment of the invention. FIGS.
FIG. 3 is a perspective view showing a silicon wafer according to Embodiment 1 of the present invention.
FIG. 4 is a perspective view showing a manufacturing process of the ink jet recording head according to the first embodiment of the invention.
FIG. 5 is a cross-sectional view showing a manufacturing process of the ink jet recording head according to the first embodiment of the invention.
FIG. 6 is a cross-sectional view illustrating a manufacturing process of the ink jet recording head according to the first embodiment of the invention.
FIG. 7 is a perspective view illustrating a manufacturing process of an ink jet recording head according to a second embodiment of the invention.
FIG. 8 is a cross-sectional view illustrating a manufacturing process of an ink jet recording head according to a second embodiment of the invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate 11 Partition 12 Pressure generation chamber 13 Communication part 14 Ink supply path 20 Nozzle plate 21 Nozzle opening 30 Sealing substrate 50 Elastic film 60 Lower electrode film 70 Piezoelectric layer 80 Upper electrode film 100 Silicon wafer 110, 110A Sacrificial Wafer 120 Bonding layer 300 Piezoelectric element

Claims (13)

In a method for manufacturing a silicon device having a thin film pattern on a silicon substrate,
A step of forming a protruding portion protruding from the other portion on one side of the sacrificial wafer, a step of bonding the surface on the protruding portion side of the sacrificial wafer to the surface of the silicon wafer via a bonding layer, A method of manufacturing a silicon device, comprising: a step of forming the thin film pattern on a silicon wafer; and a step of peeling the sacrificial wafer from the silicon wafer by removing the bonding layer by etching. 2. The method of manufacturing a silicon device according to claim 1, wherein the bonding layer is made of silicon dioxide. 3. The method of manufacturing a silicon device according to claim 1, wherein the protrusion is provided over a peripheral edge of the sacrificial wafer. 4. The method of manufacturing a silicon device according to claim 3, wherein the concave portions defined by the protruding portions of the sacrificial wafer are in a lattice shape. 5. The method according to claim 3, wherein a through hole communicating with a space defined between the sacrificial wafer and the silicon wafer is provided on the other surface side of the sacrificial wafer, and in the step of peeling the sacrificial wafer, A method of manufacturing a silicon device, comprising: supplying an etching agent into the space from a hole to etch the bonding layer from the space. 6. The method of manufacturing a silicon device according to claim 1, wherein the silicon wafer is made of single crystal silicon. An ink jet comprising: a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined; and a piezoelectric element provided on the flow path forming substrate via a vibration plate to apply pressure to the pressure generating chamber. In the manufacturing method of the recording head,
A step of forming a protruding portion protruding from the other portion on one side of the sacrificial wafer, a step of bonding the surface on the protruding portion side of the sacrificial wafer to the surface of the silicon wafer via a bonding layer, Forming the diaphragm and the piezoelectric element on the silicon wafer; removing the sacrificial wafer from the silicon wafer by removing the bonding layer by etching; and dividing the silicon wafer into a plurality of streams. And a step of forming a path forming substrate. 8. The method of manufacturing an ink jet recording head according to claim 7, wherein the bonding layer is made of silicon dioxide. 9. The method of manufacturing an ink jet recording head according to claim 8, wherein the protrusion is provided over a peripheral edge of the sacrificial wafer. 10. The method of manufacturing an ink jet recording head according to claim 9, wherein the concave portions defined by the protruding portions of the sacrificial wafer are in a lattice shape. 11. The process according to claim 9, wherein a through-hole communicating with a space defined between the sacrificial wafer and the silicon wafer is provided on the other surface side of the sacrificial wafer, and in the step of peeling the sacrificial wafer, An ink jet recording head manufacturing method comprising: supplying an etching agent into a space from a hole to etch the bonding layer from the space. 12. The method according to claim 7, further comprising a step of bonding a sealing substrate having a sealing portion for sealing the piezoelectric element on the silicon wafer after the step of forming the piezoelectric element. A method for manufacturing an ink jet recording head. 13. The method of manufacturing an ink jet recording head according to claim 7, wherein the silicon wafer is made of single crystal silicon, and the piezoelectric element is formed by a thin film and a lithography method.

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