JP4143362B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of forming an arbitrary plasma processing distribution by providing a shield that shields a part of the internal space of a vacuum chamber.
[0002]
[Prior art]
Plasma processing such as dry etching, ashing, thin film deposition, or surface modification using plasma is widely used in various industrial fields such as a semiconductor manufacturing apparatus and a liquid crystal display manufacturing apparatus.
[0003]
Hereinafter, as an example of an apparatus for performing such plasma processing, a “microwave excitation type” plasma processing apparatus that excites plasma by microwaves will be described.
[0004]
FIG. 13 is a schematic diagram showing the structure of a microwave excitation type plasma processing apparatus. This apparatus includes a processing chamber 10, a transmission window 30 made of a flat dielectric plate provided on the upper surface of the processing chamber 10, a microwave waveguide 20 provided outside the transmission window 30, and a transmission window. And a stage 16 for placing and holding a workpiece W such as a semiconductor wafer in a processing space below 30.
[0005]
The processing chamber 10 can maintain a reduced-pressure atmosphere formed by the vacuum exhaust system E, and a gas introduction pipe (not shown) for introducing a processing gas into the processing space is appropriately provided on the side surface of the chamber 10. Yes.
[0006]
For example, when performing an etching process on the surface of the workpiece W using this plasma processing apparatus, first, the workpiece W is placed on the stage 16 with the surface facing upward. . Next, after the processing space is depressurized by the vacuum exhaust system E, an etching gas as a processing gas is introduced into the processing space. Thereafter, the microwave M is introduced from the microwave waveguide 20 to the slot antenna 20S in a state where the atmosphere of the processing gas is formed in the processing space.
[0007]
The microwave M is radiated from the slot antenna 20S toward the transmission window 30, and is transmitted through the transmission window 30 and radiated to the processing space in the chamber. Plasma of processing gas is formed by the energy of the microwave radiated into the processing space. When the electron density in the plasma thus generated becomes higher than the density (cut-off density) that can shield the microwave M supplied through the transmission window 30, the microwave passes from the lower surface of the transmission window 30 to the processing space in the chamber. A microwave standing wave is formed between the reflection surface of the microwave and the lower surface of the slot antenna 20S.
[0008]
Then, the microwave reflection surface becomes a plasma excitation surface, and the stable plasma P is excited on this plasma excitation surface. In the stable plasma P excited on this plasma excitation surface, ions and electrons collide with the molecules of the processing gas, thereby causing excited active species (plasma generation) such as excited atoms, molecules, and free atoms (radicals). Product) is generated. These plasma products diffuse in the processing space as indicated by arrow A and fly to the surface of the workpiece W, and plasma processing such as etching is performed.
[0009]
By the way, since the area of semiconductor wafers and glass substrates for liquid crystal displays that are to be processed W is increasing year by year, a plasma generating apparatus having a high density and a uniform density over a large area is required for plasma processing of these. It is said that.
[0010]
In some cases, the surface of the workpiece W having a complicated three-dimensional shape may be uniformly plasma-treated, or conversely, only a part of the workpiece W may be plasma-treated.
[0011]
In response to these requirements, in the case of the conventional plasma processing apparatus as illustrated in FIG. 13, the distribution of the plasma P formed in the processing space is improved by devising the distribution of the microwave introduced from the slot antenna 20S. Attempts have been made to optimize.
[0012]
For example, Japanese Patent Laid-Open No. 2000-273646 discloses an invention using a “radial line slot antenna” in which a large number of slots are distributed over the entire lower surface of the slot antenna 20S. By radiating the microwave M introduced from the microwave waveguide 20 through these many slots, the microwave can be radiated almost uniformly into the chamber 10, so that the plasma of the processing gas is made uniform. Thus, it should be possible to perform uniform plasma treatment on the surface of the workpiece W.
[0013]
However, even with these plasma processing apparatuses, the surface of the workpiece W may not be uniformly plasma processed. For example, when the pressure in the chamber 10 is set to about 40 Pa (Pascal) or less, electrons in the plasma are lost due to diffusion near the inner wall of the processing chamber 10, thereby lowering the electron density and reducing the microwave density. Insufficient shielding. For this reason, the standing wave of the microwave is not formed well, and the density of the plasma excited in this portion may be reduced. As a result, as compared with the central portion of the workpiece W, the ion current incident on the peripheral portion of the workpiece W is reduced, and “unevenness” occurs in the plasma processing on the surface of the workpiece W.
[0014]
In order to solve such a problem, Japanese Patent Laid-Open No. 2001-167900 proposes to form a uniform plasma by providing a distribution in the “thickness” and “dielectric constant” of the transmission window 30. ing.
[0015]
Japanese Patent Application Laid-Open No. 2000-273646 discloses an invention in which the plasma density is made uniform by providing a conductor plate inside the microwave transmission window of the chamber. The conductor plate is provided with a plurality of linear protrusions extending from the center toward the outer periphery, and the uniformity of plasma is enhanced by giving selectivity to the surface wave mode of the microwaves by the on-line protrusions.
[0016]
[Problems to be solved by the invention]
However, all of these conventional plasma processing apparatuses are formed in the range of the skin depth d near the transmission window 30 that substantially constitutes a part of the wall surface of the chamber 10 by controlling the intensity distribution of the microwave. This is based on the idea of improving the uniformity of the plasma generated.
[0017]
In the case of high-frequency plasma, the skin depth d is only a few millimeters to a few centimeters, and electron acceleration occurs only in the immediate vicinity of the transmission window 30. Therefore, the active species, decomposed species, reactive species, and the like formed by the plasma must diffuse within the processing chamber 10 by, for example, 10 centimeters or more before flying on the surface of the workpiece W. . However, these active species, decomposed species, reactive species, and the like formed by plasma spread in the chamber 10 in all directions until they fly to the surface of the workpiece W, and collide with the inner wall of the chamber to be inactivated ( Deactivated). As a result, as illustrated by an arrow A in FIG. 13, the peripheral portion tends to have a lower distribution than the central portion.
[0018]
Moreover, these active species often reach the surface of the workpiece W in a non-uniform distribution according to the pressure distribution formed by the exhaust system E or the gas flow.
[0019]
Furthermore, since the plasma processing speed also depends on the surface temperature of the workpiece W, non-uniformity may occur depending on the temperature distribution. In the case of the plasma processing, the surface of the workpiece W is often heated by radiation from the plasma P, and thus the temperature is often high in the central portion and low in the peripheral portion.
[0020]
As described above, even if the plasma P is uniformly formed, the plasma treatment on the surface of the workpiece W is often not uniform.
[0021]
The present invention has been made on the basis of recognition of such problems, and an object thereof is to provide a plasma processing apparatus capable of performing uniform plasma processing on the surface of an object to be processed based on an idea different from the conventional one. .
[0022]
In order to achieve the above object, a microwave-excited plasma processing apparatus of the present invention includes:
A microwave-excited plasma processing apparatus for performing plasma processing by forming plasma in a chamber and causing a plasma product generated by the plasma to act on a surface of an object to be processed placed in the chamber. ,
A part of a space in the processing space in the chamber where the plasma product that diffuses toward the surface of the object to be processed is formed, and the plasma product diffuses toward the surface of the object to be processed. A part of the space to be provided, and a shield provided over the space,
The shield is such that the size of the portion provided in the space where the plasma product is formed is smaller than the size of the portion provided in the space where the plasma product diffuses toward the surface. Formed And a portion provided in the space where the plasma product is formed is held on the inner wall of the chamber facing the stage on which the workpiece is placed. It is characterized by that.
[0023]
According to the above configuration, by providing the shield, the amount of plasma product flying on the surface of the object to be processed can be adjusted, and uniform plasma processing can be performed.
[0024]
Here, in the present specification, “plasma product” is formed by decomposing an excited active species such as excited atoms or molecules formed by plasma, free atoms (radicals), or a source gas by plasma. Includes molecules and atoms.
[0031]
Where above Microwave excitation type plasma processing equipment In this case, if the plasma product is deactivated on the surface of the shield, it is easy to suppress the excessive plasma product and obtain a uniform distribution.
[0033]
Further, if the shield is connectable to the ground potential, it becomes easy to prevent charge-up due to charged particles or the like.
[0035]
Further, if the shield has a cooling mechanism, it is possible to prevent heating due to plasma radiation or the like and to reduce damage due to plasma.
[0036]
Moreover, if the said shield has a heating mechanism, local adjustment of the plasma processing speed of a to-be-processed object will become easy.
[0037]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to specific examples.
[0038]
FIG. 1 is a conceptual diagram for explaining a basic configuration of a main part of a plasma generator according to an embodiment of the present invention.
[0039]
That is, the plasma generation apparatus of this specific example is also a “microwave excitation type” plasma processing apparatus, and includes a processing chamber 10 and a transmission window 30 made of a flat dielectric plate provided on the upper surface of the processing chamber 10. And a microwave waveguide 20 provided outside the transmission window 30 and a stage 16 for mounting and holding a workpiece W such as a semiconductor wafer in a processing space below the transmission window 30.
[0040]
The processing chamber 10 can maintain a reduced-pressure atmosphere formed by the vacuum exhaust system E, and a gas introduction pipe (not shown) for introducing a processing gas into the processing space is appropriately provided on the side surface of the chamber 10. Yes.
[0041]
In the present invention, a shield 40 is provided in the chamber. In the case of this specific example, the shield 40 is provided over a space where plasma is formed and a space where active species and decomposed species generated by the plasma diffuse toward the surface of the workpiece W. It has been.
[0042]
The shield 40 serves to adjust the spatial distribution of plasma products such as excited active species of the processing gas formed by the plasma P. That is, a plasma P is formed by the microwave M introduced from the transmission window 30, and plasma products such as active species formed by the plasma P diffuse in the chamber 10 as indicated by an arrow A. It reaches the surface of the workpiece W. At this time, by providing the shield 40, it is possible to appropriately suppress the amount of the plasma product in that portion and make the distribution uniform.
[0043]
FIG. 2 is a graph illustrating the difference in the plasma processing speed distribution depending on the presence or absence of the shield 40 in this specific example. That is, the horizontal axis in the figure represents the distance from the center on the surface of the workpiece W, and the vertical axis represents the plasma processing speed.
[0044]
When the shield 40 is not provided, the plasma processing speed has a substantially concentric distribution that increases at the center of the workpiece W. On the other hand, when the shield 40 is provided, as exemplified by the solid line in the figure, the plasma processing speed in the central portion is reduced, and the distribution can be made uniform. Furthermore, by providing the shield 40, the diffusion state of the plasma product in the chamber changes, and as shown by the two-dot chain line in FIG. In some cases, the plasma processing speed in the portion increases to make the distribution uniform.
[0045]
The action of the shield 40 in the present invention is primarily to control its distribution by occupying a part of the diffusion space of plasma products such as active species and decomposed species. That is, by shielding a part of the space where active species formed by the plasma P diffuses, the amount of plasma products in that part can be reduced and the distribution on the surface of the object to be processed can be optimized. It becomes.
[0046]
As a material of the shield 40, for example, various metals, inorganic materials, or organic materials can be used. However, it is desirable to use a material that is not easily damaged by plasma P or active species. Further, the surface of the shield 40 can be coated to increase durability.
[0047]
Further, the active species can be actively deactivated on the surface of the shield 40. For example, when the surface of the shield 40 is formed of the same material as the inner wall of the chamber 10, the active species are easily deactivated, and the active species can be effectively suppressed near the center of the workpiece W. . Specifically, when the surface of the shield 40 is formed of aluminum oxide or the like similar to the inner wall of the chamber, active species and the like are easily deactivated.
[0048]
On the other hand, the second function of the shield 40 is to adjust the amount of radiation from the plasma. That is, during the plasma processing, the surface of the workpiece W is heated by the heat radiation from the plasma P, and the temperature rises. At this time, even if the plasma P is uniformly formed, the temperature on the surface of the workpiece W is likely to be high at the center and low at the periphery. In many plasma processes such as etching and thin film formation, the processing speed is affected by the temperature of the workpiece W. Therefore, if the temperature distribution is not uniform, the processing speed is also distributed.
[0049]
On the other hand, according to the present invention, by providing the shield 40, the heat radiation from the plasma P can be appropriately shielded, and the temperature distribution on the surface of the workpiece W can be controlled. As a result, the processing speed distribution can be made uniform as illustrated in FIG.
[0050]
In this specific example, the shield 40 also occupies a part of the space where the plasma P is formed. For this reason, the distribution of the processing speed on the surface of the workpiece W can be made uniform by adjusting the distribution of the plasma P together.
[0051]
FIG. 3 is a schematic view showing a second specific example of the plasma processing apparatus of the present invention. In the figure, the same elements as those described above with reference to FIG.
In the case of this specific example, the transmission window 30 provided in the chamber is a single window formed integrally, and the shield 40 is disposed below this. The microwave M introduced from the transmission window 30 forms a high-intensity plasma P in the vicinity of the skin depth. The shield 40 is provided so as not to shield the space in which the plasma P is formed, but to partially shield only the active species diffusion space. By appropriately shielding the plasma products such as active species and decomposition species of the processing gas generated in the plasma P by the shield 40, the plasma processing speed on the surface of the workpiece W can be made uniform.
[0052]
That is, when the workpiece W is disposed away from the space where the plasma P is formed, the shield 40 can be disposed away from the space where the plasma P is formed.
[0053]
In order to arrange the shield 40 in this way, for example, the shield 40 is placed in the internal space of the chamber 10 by a fixing member (not shown) extending from the inner wall of the chamber 10 toward the diffusion space of the active species. What is necessary is just to hold | maintain suitably.
[0054]
In this specific example, the shield 40 does not shield the plasma P formation space. Therefore, even if the shield 40 is disposed, the generation mode of the plasma P is not affected, and readjustment of plasma generation conditions is unnecessary.
[0055]
The active species and the like formed by the plasma P are uniformly distributed by the shield 40 in the diffusion space, and the heat radiation from the plasma P is also adjusted by the shield 40 so that the workpiece W It becomes possible to perform a uniform plasma treatment on the surface. In the specific example shown in FIG. 3, by providing the shield 40 near the center where the amount of active species is large, the direct component of that part is shielded, and a uniform distribution can be obtained by “wraparound” from the surroundings. Can be.
[0056]
FIG. 4 is a schematic view showing a third specific example of the plasma processing apparatus of the present invention. In this figure, the same elements as those described above with reference to FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.
In this specific example, the shield 40 is connected to the ground potential. In this way, even when a large amount of active species or charged particles are deactivated on the surface of the shielding body 40, the shielding body 40 can perform a stable shielding function without being charged up.
[0057]
FIG. 5 is a schematic view showing a fourth specific example of the plasma processing apparatus of the present invention. In the figure, the same elements as those described above with reference to FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.
In this specific example, the shield 40 is movable up and down as indicated by the arrow D. In this way, even when various parameters such as the shape and size of the workpiece W, the intensity of the plasma to be formed, the type and amount flow of the processing gas, the processing temperature, the processing pressure, and the like are changed, the shield 40 is used. By moving the lens, an optimal arrangement can be obtained, and a uniform plasma treatment can always be realized.
[0058]
In order to make the shield 40 movable in this way, for example, a motion may be applied from the outside of the chamber 10 by means such as a magnetic coupling method or a bellows method, or a vacuum motor or the like may be provided in the chamber 10. You may provide exercise.
[0059]
FIG. 6 is a schematic view showing a fifth example of the plasma processing apparatus of the present invention. In the figure, the same elements as those described above with reference to FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description thereof is omitted.
In the case of this specific example, the shield 40 is disposed at a position shifted from the center of the workpiece W. In the present invention, it is also possible to improve the uniformity of the plasma processing by arranging the shield 40 at an arbitrary position. That is, in a state where the shield 40 is not disposed, the plasma processing speed distribution may not be symmetrical.
[0060]
For example, the flow of the processing gas often has a pressure distribution from the gas supply port toward the exhaust system E. For this reason, the concentration of active species differs between the vicinity of the gas supply port and the vicinity of the exhaust system E, and there may be a difference in the plasma processing speed.
[0061]
In addition, when the internal shape of the chamber 10, the shape of the workpiece W, or the distribution of the plasma P is asymmetric, the distribution of the plasma processing speed is likely to be asymmetric.
[0062]
In the present invention, in these cases, it is easy to improve the uniformity of the plasma processing by arranging the shield 40 at an arbitrary location in the chamber.
[0063]
Furthermore, as shown by the arrow D in FIG. 6, if the shield 40 can be moved, it is convenient to flexibly cope with changes in the gas flow rate, the shape of the workpiece W, and the like.
[0064]
As the moving mechanism in this case, various mechanisms such as the magnetic coupling method, the bellows method, and the vacuum motor method as described above with reference to FIG. 5 may be used as appropriate. Furthermore, a vertical movement mechanism as illustrated in FIG. 5 and a horizontal movement mechanism as illustrated in FIG. 6 may be combined. That is, if the shield 40 can be moved to any position in the chamber in the vertical and horizontal directions, it is possible to more flexibly cope with changes in the gas flow rate and the shape of the workpiece W.
[0065]
FIG. 7 is a schematic view showing a sixth specific example of the plasma processing apparatus of the present invention. In this figure, the same elements as those described above with reference to FIGS. 1 to 6 are denoted by the same reference numerals, and detailed description thereof is omitted.
In the case of this example, the shield 40 is small in the plasma P generation space and large on the workpiece W side. In this way, the influence of the shield 40 on the plasma P can be suppressed. That is, a high shielding effect is obtained while suppressing fluctuations in the plasma P formation conditions.
[0066]
In the present invention, various shapes other than those exemplified in FIG. 7 can be given as the shape of the shield 40.
[0067]
FIG. 8 is a schematic diagram showing a seventh example of the plasma processing apparatus of the present invention. In this figure, the same elements as those described above with reference to FIGS. 1 to 7 are denoted by the same reference numerals, and detailed description thereof is omitted.
In this specific example, the shield 40 has a cooling mechanism 40C. That is, the shield 40 is heated by radiation from the plasma P, and the surface thereof may be damaged by the plasma P, active species, or the like. In contrast, by providing the cooling mechanism 40C, it is possible to suppress an increase in the temperature of the shield 40 and to reduce damage due to plasma or the like. As a result, the temperature rise of the workpiece W and the adhesion of impurities to the surface can be suppressed.
[0068]
The cooling mechanism 40C may be a refrigerant type using gas or liquid, or an electronic cooling type such as a Peltier cooler.
[0069]
FIG. 9 is a schematic diagram showing an eighth example of the plasma processing apparatus of the present invention. In this figure, the same elements as those described above with reference to FIGS. 1 to 8 are denoted by the same reference numerals, and detailed description thereof is omitted.
In the case of this example, the shield 40 has a heating mechanism 40H in the vicinity of its tip. By providing such a heating mechanism 40H, it is possible to increase the temperature of the surface of the workpiece W to control / adjust the plasma processing speed distribution.
[0070]
For example, when the input power of the plasma P or the gas flow rate is changed, as illustrated in FIG. 5 or FIG. Instead, the workpiece W can be locally heated by the heating mechanism 40H to ensure the uniformity of the plasma processing. For example, when a part of the workpiece W is heated by the heating mechanism 40H, the speed of plasma processing such as etching may increase. By utilizing this phenomenon, the plasma processing speed distribution on the surface of the workpiece W can be made more uniform.
[0071]
FIG. 10 is a schematic view showing a ninth example of the plasma processing apparatus of the present invention. In the figure, the same elements as those described above with reference to FIGS. 1 to 9 are denoted by the same reference numerals, and detailed description thereof is omitted.
In the case of this specific example, a plurality of shields 40 are provided in a space where active species generated by the plasma P diffuse. For example, in the case where the intensity distribution of the plasma P introduced through the transmission window 30 is bimodal, by arranging the shields 40 corresponding to the respective peaks, the surface P of the workpiece W is arranged. The plasma processing speed can be made nearly uniform.
[0072]
In the present invention, the number of shields 40 is not limited to two, and three or more shields 40 may be arranged. Also, the shape and size of the shields 40 need not be the same. That is, by appropriately arranging a plurality of shields 40 in the chamber, it is possible to flexibly cope with the intensity distribution of the plasma P, the pressure distribution of the processing gas, the pressure distribution in the chamber, the temperature distribution of the workpiece W, and the like. The plasma processing speed on the surface of the workpiece W can be made uniform.
[0073]
In addition, when the workpiece W is uneven or has an inclined surface, the plurality of shields 40 are appropriately arranged in accordance with these shapes, so that the surface of the workpiece W is uniform. Plasma processing can be performed.
[0074]
FIG. 11 is a schematic view showing a tenth example of the plasma processing apparatus of the present invention. Also in this figure, the same elements as those described above with reference to FIGS. 1 to 10 are denoted by the same reference numerals, and detailed description thereof is omitted.
In the case of this specific example, a plurality of transmission windows 30 provided in the chamber are provided, and the microwave M is introduced from each of them. Even in the case where a plurality of transmission windows 30 are provided in this way, the plasma processing speed distribution on the surface of the workpiece W disposed therebelow may have a high central portion as illustrated in FIG. . In such a case, the plasma processing speed on the surface of the workpiece W can be made uniform by providing the shield 40 as illustrated in FIG. 11 and appropriately shielding the plasma product.
[0075]
Note that the structure of the transmission window 30 used in the present invention is not limited to that illustrated in FIGS. 1 to 11, and the shielding body 40 is appropriately disposed even when transmission windows having various structures are used. Thus, the effect of the present invention can be obtained.
[0076]
Furthermore, the present invention is not limited to the “microwave excitation type” plasma processing apparatus, and can be similarly applied to various other types of plasma processing apparatuses to obtain the same effects.
[0077]
For example, what is illustrated in FIG. 12 is a counter electrode type plasma processing apparatus. This plasma processing apparatus performs etching or ashing, and includes a vacuum chamber 10 and an RF power source 110. One end of the power source 110 is connected to the stage 16 via the connection cable 120A, and the other end is connected to the counter electrode 104 provided inside the chamber 101 via the connection cable 120B. A workpiece W is placed on the stage 16.
[0078]
In plasma processing, first, the inside of the chamber 10 is evacuated by the vacuum exhaust pump E, and a processing gas such as oxygen is introduced from the gas supply source 107 to maintain the inside of the chamber at a predetermined discharge pressure. Then, a high-frequency electric field is applied between the stage 16 and the counter electrode 104 by the power source 110 to generate plasma P. Then, active species and decomposed species of the processing gas are generated, and these reach the surface of the workpiece W and etching and ashing are performed.
[0079]
Even in such a counter electrode type plasma processing apparatus, the speed of the plasma processing on the surface of the workpiece W is made uniform by appropriately arranging the shield 40 between the counter electrode 104 and the workpiece W. Can be.
[0080]
The embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples.
[0081]
For example, elements such as a microwave power source and a waveguide mechanism provided outside the chamber, the transmission window, or the chamber used in the present invention are appropriately modified by those skilled in the art based on the spirit of the present invention. Included in the range.
[0082]
Further, the shape and size of the chamber, or the arrangement relationship of the shielding body and the transmission window is not limited to the illustrated one, and can be appropriately determined in consideration of the contents and conditions of the plasma processing.
[0083]
Furthermore, the present invention is not limited to the microwave excitation type or counter electrode type plasma processing apparatus, and can be applied to various plasma processing apparatuses using plasma to obtain the same effects.
[0084]
Furthermore, in the specific examples described above, the plasma processing apparatus that performs etching or ashing has been described as an example. However, in addition to this, the plasma processing apparatus realized as a thin film deposition apparatus, a surface processing apparatus, a plasma doping apparatus, or the like Any of these are included in the scope of the present invention.
[0085]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to provide a plasma processing apparatus capable of performing uniform plasma processing on the surface of an object to be processed, and there are great industrial advantages.
[Brief description of the drawings]
FIG. 1 is a conceptual diagram for explaining a basic configuration of a main part of a plasma generator according to an embodiment of the present invention.
FIG. 2 is a graph illustrating the difference in plasma processing speed distribution depending on the presence or absence of a shield 40 in the present invention.
FIG. 3 is a schematic view showing a second specific example of the plasma processing apparatus of the present invention.
FIG. 4 is a schematic view showing a third specific example of the plasma processing apparatus of the present invention.
FIG. 5 is a schematic view showing a fourth specific example of the plasma processing apparatus of the present invention.
FIG. 6 is a schematic view showing a fifth specific example of the plasma processing apparatus of the present invention.
FIG. 7 is a schematic view showing a sixth specific example of the plasma processing apparatus of the present invention.
FIG. 8 is a schematic view showing a seventh specific example of the plasma processing apparatus of the present invention.
FIG. 9 is a schematic view showing an eighth example of the plasma processing apparatus of the present invention.
FIG. 10 is a schematic view showing a ninth example of the plasma processing apparatus of the present invention.
FIG. 11 is a schematic view showing a tenth specific example of the plasma processing apparatus of the present invention.
FIG. 12 is a schematic view showing an eleventh example of the plasma processing apparatus of the present invention.
FIG. 13 is a schematic diagram showing the structure of a microwave excitation type plasma processing apparatus.
[Explanation of symbols]
10 chambers
16 stages
20 Microwave waveguide
20S slot antenna
30 Transmission window
40 Shield
40C cooling mechanism
40H heating mechanism
101 chamber
104 Counter electrode
107 Gas supply source
110 Power supply
120A, 120B connection cable
E Exhaust system
M microwave
P Plasma
W Workpiece

Claims (5)

A microwave-excited plasma processing apparatus for performing plasma processing by forming plasma in a chamber and causing a plasma product generated by the plasma to act on a surface of an object to be processed placed in the chamber. ,
A part of a space in the processing space in the chamber where the plasma product that diffuses toward the surface of the object to be processed is formed, and the plasma product diffuses toward the surface of the object to be processed. A part of the space to be provided, and a shield provided over the space,
The shield is such that the size of the portion provided in the space where the plasma product is formed is smaller than the size of the portion provided in the space where the plasma product diffuses toward the surface. A microwave is formed, and a portion provided in a space in which the plasma product is formed is held on an inner wall of the chamber facing a stage on which the workpiece is placed. Excitation type plasma processing equipment.   The microwave-excited plasma processing apparatus according to claim 1, wherein the shield is one in which the plasma product is deactivated on a surface thereof.   The microwave-excited plasma processing apparatus according to claim 1, wherein the shield is connectable to a ground potential.   The microwave-excited plasma processing apparatus according to claim 1, wherein the shield has a cooling mechanism.   The microwave-excited plasma processing apparatus according to claim 1, wherein the shield has a heating mechanism.

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