JP4144953B2 - Liquid crystal display device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display device of an MVA system improved in a visual angle characteristic and a process for producing the same. SOLUTION: This liquid crystal display device is the liquid crystal display device which includes a TFT substrate formed with thin-film transistors(TFTs) matrix constituted by forming the TFTs and transparent conductive films connected to the source electrodes of the TFTs to constitute pixels to the matrix and another substrate having counter electrodes facing the pixel electrodes of the substrate and is provided with domain regulating means 20B for controlling the alignment direction of perpendicularly aligned liquid crystal molecules on at least one of the substrates. In such a case, the structure constituting the domain regulating means 20B includes conductive materials 102 enclosed by insulating materials 101 and 103.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a liquid crystal display device. More specifically, the present invention relates to a liquid crystal display device driven by a thin film transistor matrix and capable of improving visual characteristics, and a method for manufacturing the same.
[0002]
[Prior art]
Among flat panel displays comparable to the image quality of a cathode ray tube (CRT), the most widely used at present is a liquid crystal display (LCD). In particular, thin-film transistor (TFT) type LCDs (TFT-LCDs) are expected to further expand the market by application to consumer devices such as personal computers, word processors and OA devices, and home appliances such as portable televisions. Yes. Along with this, further improvement in image quality is desired.
[0003]
At present, the most widely used method in the TFT-LCD is a normally white mode TN (Twisted Nematic) type TFT-LCD. In recent years, TN type TFT-LCD manufacturing technology has made remarkable progress, and the contrast and color reproducibility in the front have surpassed those of CRT. However, the TN-LCD has a major drawback that the viewing angle is narrow, and there is a problem in that the application is limited.
[0004]
In order to solve such problems, Japanese Patent Publication No. Sho 53-48452 and Japanese Patent Publication No. 1-120528 propose LCDs of a system called IPS (In-Plain Switching) type. The IPS method is characterized in that the liquid crystal molecules are not raised and switched in the horizontal direction. When the liquid crystal molecules are made to stand like the TN method, the birefringence differs depending on the viewing angle direction, resulting in problems. If the switching is performed in the lateral direction, the birefringence does not change much depending on the direction, so that a very good viewing angle characteristic can be obtained. However, there is another problem with the IPS method, one of which is that the response speed is very slow. Currently, when a moving image with fast motion is displayed, a problem such as an image flowing occurs. As described above, the IPS method proposed as a solution to the problem of the viewing angle characteristic of the TN method has a problem that it is not sufficient in terms of characteristics other than the viewing angle characteristic.
[0005]
Therefore, a VA (Vertical Aligned) method (VA mode liquid crystal) that uses a vertical alignment film and operates in a birefringence mode rather than an optical rotation mode like the TN method has been proposed. The VA method is a method in which a negative liquid crystal material having negative dielectric anisotropy and a vertical alignment film are combined, and when no voltage is applied, the liquid crystal molecules are aligned in the vertical direction, resulting in black display. On the other hand, when a predetermined voltage is applied, the liquid crystal molecules are aligned in the horizontal direction, resulting in white display. The VA method has a higher display contrast and a faster black level response speed than the TN method. The VA system is attracting attention as a new liquid crystal display system for the reasons described above. However, when halftone display is performed by the VA method, there is a problem similar to that of the TN method in which the viewing state depends on the viewing angle, and the viewing angle characteristic is sometimes inferior to the IPS method.
[0006]
In the TN system, it is known that the viewing angle characteristics of a liquid crystal display device (LCD) are improved by setting the alignment directions of liquid crystal molecules in a pixel to a plurality of different directions. In general, in the TN system, the alignment direction (pretilt angle) of liquid crystal molecules in contact with the substrate surface is regulated by the direction of rubbing treatment applied to the alignment film. The rubbing process is a process of rubbing the surface of the alignment film in one direction with a cloth such as rayon, and the liquid crystal molecules are aligned in the direction of the trace. Therefore, the viewing angle characteristics can be improved by changing the rubbing direction in the pixel. Although the rubbing process is widely used, it is a process of scratching the surface of the alignment film as described above, and there is a problem that dust is easily generated. In the TN system, as another method for regulating the pretilt angle of liquid crystal molecules, it is known to provide an uneven pattern on an electrode. Liquid crystal molecules near the electrode are aligned along the surface of the concavo-convex pattern.
[0007]
Also in the VA system, it is known that viewing angle characteristics are improved by dividing the alignment direction of liquid crystal molecules into a plurality of different directions in a pixel. In JP-A-6-301036, an opening is provided in a portion of the counter electrode that faces the center of the pixel electrode, thereby generating a portion where the electric field is inclined at the center of the pixel electrode, and the orientation direction of the liquid crystal molecules is changed to two directions or A VA liquid crystal display device that is divided into four directions is disclosed. However, the liquid crystal display device disclosed in Japanese Patent Laid-Open No. 6-301036 has a problem that the response speed is slow, and in particular, the response speed when changing from a state where no voltage is applied to a state where the voltage is applied is slow. I understood.
[0008]
Japanese Laid-Open Patent Publication No. 7-199193 discloses a VA liquid crystal display device that divides the alignment direction of liquid crystal into a plurality of regions in a pixel by providing inclined surfaces having different directions on the pixel electrode. However, in the disclosed configuration, since the inclined surface is provided on the entire pixel electrode, all the liquid crystals that contact the alignment surface are aligned along the inclined surface when no voltage is applied, so that a complete black display is achieved. It was not possible to obtain it, and there was a problem that the contrast was lowered. Moreover, since the inclined surface is provided in the whole pixel electrode, it turned out that an inclined surface is loose and it is not enough to prescribe | regulate the orientation direction of a liquid crystal. To make the inclined surface steep, it is necessary to increase the thickness of the structure. However, if the thickness of the dielectric structure is increased, charges are accumulated in the structure during the operation of the device, and the voltage between the electrodes is caused by the accumulated charge. It has been found that a so-called burn-in phenomenon occurs in which the direction of liquid crystal molecules does not change even when a voltage is applied.
[0009]
As described above, in the so-called multi-domain vertical alignment (MVA) type liquid crystal display device in which the alignment direction of the liquid crystal molecules is divided into a plurality of different directions in the pixel electrode, the viewing angle characteristics are improved. A liquid crystal display device described in Japanese Patent Application No. 10-185836 as a solution to solve various problems in realizing alignment division in a pixel electrode and to improve viewing angle characteristics by a simple manufacturing process. There is. More generally speaking, this new liquid crystal display device is a liquid crystal display device including a substrate formed by integrating and matrixing TFTs and pixel electrodes as usual, and on this substrate (or opposed to the pixel electrode). On another substrate provided with an electrode), a domain regulating means for controlling the alignment direction of the vertically aligned liquid crystal molecules is provided.
[0010]
More specifically, the new liquid crystal display device described in the specification of Japanese Patent Application No. 10-185836 is of the VA type using a conventional vertical alignment film and enclosing a negative type liquid crystal as a liquid crystal material. There is provided domain regulating means for regulating the alignment direction in which the liquid crystal is obliquely aligned in a plurality of directions within one pixel when a voltage is applied. The domain regulating means is provided on at least one of the two glass substrates of the liquid crystal display device. In addition, at least one of the domain regulating means has a slope, and a slope that rises substantially perpendicular to the substrate having a substantially rectangular structure is also included in the slope. This liquid crystal display device does not require the rubbing treatment of the alignment film, which is indispensable for the conventional liquid crystal display method, and thus enables the viewing angle characteristics to be improved by a simple manufacturing process that is greatly simplified. . The material of the structure constituting the domain regulating means of this liquid crystal display device is a transparent or translucent resin such as polyimide, acrylic, or novolac, or silicon nitride (SiN) or silicon oxide used in the manufacture of thin film transistors. (SiO₂Insulating materials such as) have been used.
[0011]
[Problems to be solved by the invention]
However, in this MVA type liquid crystal display device, the alignment direction of the liquid crystal is aligned on the boundary of the structure of the domain restricting means, specifically in the vicinity of the peak of the mountain of the structure, for example, which is manufactured with a triangular cross section. Because of the difference, it was found that the alignment of the liquid crystal is disturbed, and display inconveniences such as light leakage and blackening occur at that portion, and there is a problem of reducing the effective aperture ratio.
[0012]
Therefore, the present invention further improves the viewing angle characteristics in the above-described new type of MVA liquid crystal display device, and the contrast, operation speed, etc. remain the same as before, and the viewing angle characteristics are the same as the IPS system. An object of the present invention is to realize a VA liquid crystal display device that is even better.
[0013]
[Means for Solving the Problems]
  The liquid crystal display device of the present invention isArranged in a matrixThin film transistor (TFT)andPixel electrode1st withA substrate,AboveProvided with a counter electrode facing the pixel electrodeSecondWith substrateA vertical alignment type liquid crystal having a negative dielectric anisotropy disposed between the first substrate and the second substrate.A liquid crystal displayThe first substrate and the second substrateAt least one ofIn, Vertical alignmentMembrane and voltage appliedThere is a domain control means to control the orientation direction of liquid crystal moleculesCage,AboveDomain regulatory measuresBut,A first electrode formed on the pixel electrode;Insulation materialA conductive material layer formed on the first insulating material layer; a second insulating material layer formed on the conductive material layer;IncludingThe vertical alignment film is formed on the second insulating material layer.It is characterized by that.
[0014]
  In one embodiment, theDomain regulatory measuresSaidPixel electrodeofOblique to the surfaceInclined tosurfaceHave.
  In one embodiment, the second insulating material layer is formed so as to surround the first insulating material layer and the conductive material layer.
In one embodiment, the first insulating material layer is made of an organic material having a melting point or a softening point higher than that of the second insulating material layer, the second insulating material layer is made of a photosensitive organic material, and the conductive material is used. The layer is made of a single metal or an alloy of a plurality of metals, or has a multilayer structure made of a plurality of metals or alloys.
In one embodiment, a drain bus line and a gate bus line are formed on the first substrate, and the domain restricting means is used as a repair electrode for a disconnected portion of the drain bus line or the gate bus line.
In one embodiment, the domain restricting means extends to the periphery of the region where the thin film transistors are formed in a matrix, and forms a common line intersecting with the extraction electrode of the thin film transistor, and the common line is It is used as a repair electrode.
In one embodiment, the conductive material layer functions as a storage capacitor electrode.
In one embodiment, a bias voltage is applied to the conductive material layer.
In one embodiment, the second substrate includes a striped transparent electrode.
[0015]
The method for manufacturing a liquid crystal display device according to the present invention includes a first insulating film, a conductive material film, and a second insulating film formed on a substrate on which the structure is to be formed. Then, the second insulating film is patterned, then the conductive material film is isotropically patterned using the patterned second insulating film as a mask, and then the first insulating film is anisotropically formed. It is characterized by forming by patterning and heating and fluidizing the material of the second insulating film of the uppermost layer of the obtained laminated structure. The patterning of the second insulating film can be performed using, for example, a resist layer having a predetermined pattern formed thereon as a mask. Alternatively, the second insulating film material may be a photosensitive material, and the second insulating film may be directly patterned by a photolithography method.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a diagram illustrating the overall configuration of a liquid crystal display device of the present invention. In the liquid crystal display device 10 of this figure, a counter electrode (common) electrode 12 is formed on one glass substrate 16, and a plurality of gate bus lines (scan bus lines) formed in parallel on the other glass substrate 17. 31, a plurality of drain bus lines (data bus lines) 32 formed in parallel to the direction perpendicular to the gate bus lines 31, and provided in a matrix corresponding to the intersections of the gate bus lines 31 and the drain bus lines 32. The TFT 33 and the pixel (cell) electrode 13 are provided, and the surfaces facing each other (the surface facing the liquid crystal when assembled) of each substrate are subjected to a vertical alignment treatment. A negative liquid crystal is sealed in between. One glass substrate 16 is often formed with a color filter, in which case it is called a color filter substrate (CF substrate), and the other glass substrate 17 is called a TFT substrate.
[0017]
As shown in FIG. 2, on the surface of the CF substrate 16 facing the liquid crystal 14, a black matrix layer 34, a color filter 39, an ITO film 12 forming a counter electrode, and projection-like structures parallel to each other at an equal pitch. (Domain restriction means) 20A is formed. A vertical alignment film is further formed thereon, but is omitted here. On the surface of the TFT substrate 17 facing the liquid crystal 14 (the surface on which the TFT 33 is formed), a gate electrode 31 forming a gate bus line, a CS electrode 35, insulating films 40 and 43, and an electrode forming a drain bus line (see FIG. (Not shown), an ITO film 13 forming a pixel electrode, and a protrusion-like structure (domain regulating means) 20B parallel to each other at an equal pitch are formed. A vertical alignment film is also formed on the TFT substrate, but is omitted here. Reference numerals 41 and 42 indicate the source and drain of the TFT, respectively. The protrusion-like structures 20A and 20B as the domain regulating means are provided on both the CF substrate side and the TFT substrate in FIG. 2, but may be provided only on one of the substrates.
[0018]
As shown in FIG. 3 (a), the protrusion patterns 20A and 20B are parallel patterns arranged at equal pitches extending in one direction, and are arranged with a half pitch shift. Therefore, a structure as shown in FIG. 3B is realized, and in a region corresponding to one pixel electrode 13, a plurality of different alignment regions having a region between the protrusion patterns 20A and 20B as one alignment region. Defined. 3A and 3B, the liquid crystal molecules 14 indicate the alignment direction (vertical direction) in a state where no voltage is applied.
[0019]
FIG. 4 shows a top view of a TFT substrate provided with a structure 20 </ b> B constituting domain regulating means used for controlling the alignment of liquid crystal molecules. The structure 20B passes over the pixel electrode 13 and the TFT 33 and is formed in a zigzag shape. The structure 20B is formed in a shape having a side that is oblique to the pixel surface, such as a triangle or a trapezoid. The zigzag bent shape of the structure 20B shown in this figure is an example, and the structure 20B has an arbitrary shape effective for defining a plurality of different alignment regions in one pixel electrode region. Can be formed. This is also true when the structure 20A as the domain regulating means is provided on the CF substrate 16 side as shown in FIG.
[0020]
The structure of the structure 20B formed on the pixel electrode 13, that is, formed on the TFT substrate is shown in FIG. The structure 20 </ b> B includes a conductive material film 102 positioned on the insulating material film 101 on the pixel electrode 13, and the conductive material film 102 is sealed with another insulating material 103.
[0021]
This structure in the present invention can be formed as follows.
First, as shown in FIG. 6A, a first insulating material film 101, a conductive material film 102, and a second insulating material film 103 are sequentially formed on the pixel electrode 13. Then, the second insulating material film 103 is patterned. Next, the lower conductive material film 102 is isotropically etched using the patterned second insulating material film 103 as a mask, and as shown in FIG. Patterning is performed to a width narrower than the pattern width 103. Subsequently, the second insulating material film 103 is also anisotropically etched using the second insulating material film 103 as a mask, and as shown in FIG. Patterning to a width equivalent to the pattern width. In some cases, the patterning of the first insulating material film 101 may be performed by isotropic etching, and the pattern width may be narrower than the pattern width of the second insulating material film 103. Finally, the second insulating material is fluidized by heating, the lower conductive material film 102 is sealed as shown in FIG. 6D, and the cross-sectional shape has a slope with respect to the upper surface of the pixel electrode 13. Complete the structure.
[0022]
The first insulating material should have a higher melting point or softening point than the first insulating material so that it does not melt or flow when the second insulating material is heated. In general, a heat-resistant organic material such as polyimide can be used, or an inorganic material such as silicon nitride or silicon oxide can be used. As the second insulating material, an organic material having a melting point or a softening point lower than that of the first insulating material is preferably used. When the structure is formed on the vertical alignment film, the second insulating material is in contact with the liquid crystal in the completed liquid crystal display device. Therefore, a material that affects the characteristics should be avoided. Further, if the second insulating material is a photosensitive material, it is advantageous because the patterning can be performed by direct exposure. However, the second insulating material may be non-photosensitive and patterned using a resist layer separately formed on the second insulating material film. Preferred as the second insulating material are resist materials typified by a photosensitive novolac resin. The conductive material is generally selected from metal materials, and for example, a single kind of metal such as chromium, aluminum, nickel, molybdenum, tungsten, titanium, copper, or an alloy thereof can be used, and these metals or alloys can be used. It is good also as the material of the multilayer structure which consists of.
[0023]
Since the conductive material film in the structure of the present invention is generally made of a material such as an opaque metal, display such as light leakage or blackening due to disorder of liquid crystal alignment near the structure as a domain regulating means It is possible to avoid the inconvenience. In order to enhance this effect, in some cases, one or both of the first and second insulating materials other than the conductive material may be a material colored, for example, black.
[0024]
Furthermore, since the structure of the present invention includes a conductive material, it is possible to repair the disconnection of the drain bus line or the gate bus line using this as described below, or to display the structure. It can be used as a storage capacitor electrode provided for stability. When the structure of the present invention is used as a storage capacitor electrode, the CS electrode 35 shown in FIGS. 2 and 4 prepared for the same purpose can be omitted.
[0025]
The thickness and patterning width of the first and second insulating material films and the conductive material film may be determined according to the target structure to be formed of these materials. For example, the thickness of the first insulating film should be sufficient to electrically insulate the conductive material film formed thereon from the pixel electrode. The thickness and patterning width of the conductive material film should be sufficient for use as a repair line and a storage capacitor electrode, which will be described later. The thickness and patterning width of the second insulating material film are sufficient to seal the conductive material film, and provide a sufficient amount of material to form a structure as a predetermined domain regulating means. Should be chosen. In addition, regarding the patterning width of the second insulating material film, it is also important to consider the patterning width of the lower conductive material film.
[0026]
The liquid crystal display device of the present invention can be manufactured by a method similar to the method of manufacturing a normal liquid crystal display device except for the manufacture of the structure of the domain regulating means.
[0027]
In general, a liquid crystal display device is subdivided into a TFT substrate manufacturing process (this process is further subdivided into a substrate cleaning process, a gate electrode formation process, an operation layer formation process, an element isolation process, a protective film formation process, a pixel electrode formation process, etc. ), A CF substrate manufacturing process (this process further includes a process of forming a black matrix layer, a color filter, a counter electrode, and the like), and an assembly process. Each of these steps in manufacturing a liquid crystal display device is well known and will not be described in detail here.
[0028]
The structure of the domain regulating means important in the present invention is formed on the pixel electrode after the pixel electrode forming step when it is provided on the TFT substrate, and on the counter electrode after forming the counter electrode when provided on the CF substrate side. . As described above, the manufacturing of the structure itself includes the formation of a continuous film of a first insulating material, a conductive material and a second insulating material, followed by patterning of each film using a photolithography technique, This is done by heating and fluidizing the second insulating material in the upper layer. The manufacture of the structure is described in detail in the examples below.
[0029]
【Example】
EXAMPLES Next, the present invention will be further described with reference to examples, but it goes without saying that the present invention is not limited to these examples.
[0030]
[Example 1]
Through a normal process, a gate electrode was formed on a transparent glass substrate, subsequently an operation layer was formed, an element isolation process was performed, a protective film was formed, and a TFT substrate on which a pixel electrode was formed was prepared. The widths of the gate bus line and the drain bus line in this TFT substrate were 10 μm and 5 μm, respectively. Subsequently, as illustrated in FIG. 6A, a 0.4 μm thick polyimide film 101 and a 200 nm thick Cr film 102 are formed on the pixel electrode 13, and a 2 μm thick photosensitive novolac resin film is formed. After the film formation, this was exposed and developed in a predetermined pattern to form a zigzag pattern resin film 103 having a width of 15 μm. Next, using this resin film 103 as a mask, the Cr film 102 is patterned by isotropic etching using ceric ammonium nitrate to form a metal film pattern 102 narrower than the width of the resin film 103 of the mask (FIG. 6). (B)). Further, the polyimide film 101 is patterned by anisotropic etching using low-pressure plasma ashing with a pressure of about 1 Pa or less with the resin film 103 having a zigzag pattern as a mask again (FIG. 6C), and then the substrate 200 is formed. By heating to 0 ° C., the uppermost novolak resin was fluidized to form a structure in which the Cr film 102 was confined as shown in FIG. Thereafter, a vertical alignment film was finally formed on the entire surface. As shown in FIG. 7, the width of the bottom portion of the structure 123 formed in a zigzag shape was about 10 μm, and the pitch width between adjacent structures was 100 μm. Since the structure thus formed becomes opaque because it includes the Cr film 102, light leakage and blackening due to disorder of the alignment of the liquid crystal in the vicinity of the structure can be shielded and made invisible. .
[0031]
Furthermore, the structure formed here can also be used for correction (repair) when the drain bus line is disconnected. As shown in FIG. 7, when the drain bus line 132 of the TFT substrate is disconnected at a position indicated by 120, the structure 122 is separated so as to separate the part 122 of the structure straddling the disconnected position 120 from the other part. The object 123 is laser-cut at the locations indicated by 124 and 125. Next, a part 122 of the separated structure is connected to the disconnected drain bus line 132 by laser welding at points indicated by 128 and 129. FIG. 8 shows a laser cut portion 124 and a laser weld portion 128. In this way, the disconnection of the drain bus line can be easily corrected.
[0032]
[Example 2]
In this example, the repair of the disconnection of the drain bus line performed using the structure having the same structure as that formed in Example 1 provided on the outer peripheral portion of the TFT matrix will be described.
[0033]
In this case, as shown in FIG. 9, the structure having the same structure as the structure created in Example 1 is formed on the drain bus line leading portion with an insulating film interposed between the drain bus line and the drain bus line. The repair line 207 is provided, and the repair line 207 and the drain line 132 with the disconnection point 120 are connected by laser welding at the intersection 208, and the repair line 207 is connected to the lead electrode 209 at the intersection 210 in the same manner. To do. A similar repair line 207 ′ is also provided on the outer peripheral portion on the opposite side of the TFT matrix, and the repair line 207 ′ and the drain line 132 having a disconnection point are similarly connected by laser welding at the intersection 208 ′, and The repair line 207 ′ is laser-connected to the extraction electrode 220 connected to the correction tab at the intersection 215 thereof. Thereafter, the disconnection of the drain bus line can be corrected by connecting the lead electrodes by external wiring.
[0034]
Example 3
In this example, the structure of the present invention is used as a storage capacitor electrode.
As shown in FIG. 10, simultaneously with the formation of the structure 202 of the present invention in the display area of the liquid crystal display device corresponding to the TFT matrix region, the structure 202 is connected to the structure 202 and has the same configuration located on the outer periphery of the display area. A common line 211 is formed, and the common line 211 is laser-connected to the storage capacitor extraction electrode 213 at an intersection 215 with the electrode.
[0035]
In this configuration, a portion of the structure 202 in the TFT matrix that overlaps with the pixel electrode 13 functions as a storage capacitor electrode. That is, since the structure of the present invention includes a layer of a conductive material, the structure 202 in the display area can also serve as a storage capacitor electrode, and a special storage capacitor electrode (see FIGS. 2 and 4) as usual. It is not necessary to prepare a TFT matrix corresponding to the CS electrode 35 shown), and the aperture ratio of the liquid crystal display device can be greatly increased.
[0036]
In addition, when a bias voltage (offset voltage) is applied to the storage capacitor electrode, the tilt of the liquid crystal can be brought close to that of the region other than the portion of the structure 202 (that is, close to the vertical direction), and the contrast can be improved. it can. In the experiment, it was found that the contrast 300 of the current display device including the CS electrode can be improved to 350 or more.
[0037]
In the first to third embodiments described so far, an example in which the structure of the present invention, which is a domain regulating means, is used for either repairing a broken drain bus line or for a storage capacitor electrode has been shown. Can also serve as both a disconnection repair and a storage capacitor electrode. Further, the structure of the present invention can be used for repair of gate bus lines in addition to repair of drain bus lines.
[0038]
Example 4
In this example, the structure of the present invention is applied to a so-called gate connection type TFT liquid crystal display device in which the gate buses of TFTs in one column in the TFT matrix are connected to the drain bus lines of the TFTs in adjacent columns. It illustrates application.
[0039]
As shown in FIG. 11, in the case of the gate connection method, the gate bus lines 302 of the TFTs 33A formed in one column are connected to each other without crossing the drain bus line 304 of the TFT 33B in the adjacent column. Scanning is performed by sequentially applying voltages to the gate bus lines. Usually, the TFT-LCD is manufactured as a transparent conductive film (so-called solid) having no surface pattern on the counter electrode (common electrode) on the CF substrate side. In this method, a stripe pattern such as STN method is used, A signal is applied to each pixel electrode. Since the gate bus type TFT matrix is connected to the drain bus line and the gate bus line, the gate matrix can be formed with a smaller number of masks than usual, so that the manufacturing method can be simplified.
[0040]
In this gate connection type TFT matrix, the storage capacitor 202 can be easily added to the pixel electrode 13 by providing the structure 202 and the common line 211 connecting them in the same manner as described in the third embodiment. it can.
[0041]
【The invention's effect】
As described above, according to the present invention, the TFT substrate including the TFT and the pixel electrode integrated / matrixed as usual is included, and the common of the CF substrate facing the pixel electrode (or the CF substrate facing the TFT substrate) is included. In the liquid crystal display device in which the structure of domain regulating means for dividing and controlling the alignment direction of vertically aligned liquid crystal molecules in one pixel into a plurality of different directions is provided on the electrode), the structure includes an opaque material Accordingly, it is possible to shield the inconvenience of light leakage and blackening caused by the disorder of the alignment of the liquid crystal in the vicinity of the structure and make it invisible.
In addition, since this structure can be used as a repair line for a broken portion in the TFT matrix, the liquid crystal display device can be made defect-free.
Furthermore, since this structure can be used as a storage capacitor electrode, it is possible to eliminate a dedicated storage capacitor electrode as in the prior art, thereby increasing the aperture ratio of the liquid crystal display device and increasing the light utilization efficiency. There are also advantages.
[Brief description of the drawings]
FIG. 1 is a perspective view of a liquid crystal display device of the present invention.
FIG. 2 is a diagram illustrating a liquid crystal display device of the present invention.
FIG. 3 is a diagram illustrating a protrusion pattern as a structure of the present invention.
FIG. 4 is a diagram illustrating a structure of the present invention formed in a zigzag pattern.
FIG. 5 is a diagram illustrating a configuration of a structure according to the present invention.
FIG. 6 is a diagram illustrating the production of the structure of the present invention.
FIG. 7 is a diagram illustrating a first aspect of the present invention.
FIG. 8 is a view showing a laser cut portion and a laser weld portion of the structure in the first embodiment.
FIG. 9 is a diagram illustrating a second aspect of the present invention.
FIG. 10 is a diagram illustrating a third aspect of the present invention.
FIG. 11 is a diagram for explaining a fourth aspect of the present invention.
[Explanation of symbols]
10. Liquid crystal display device
12 ... Counter electrode
13: Pixel electrode
16 ... CF substrate
17 ... TFT substrate
20A, 20B ... structure
31 ... Gate bus line
32 ... Drain bus line
33, 33A, 33B ... TFT
101: First insulating material film
102: Conductive material film
103 ... Second insulating material film
120: Disconnection point
123 ... Structure
124, 125 ... Laser cutting part
128, 129 ... Laser welded part
132 ... Drain bus line
202 ... Structure
207, 207 '... repair line
209, 220 ... extraction electrode
211 ... Common line
213... Storage capacitor extraction electrode
302 ... Gate bus line
304 ... Drain bus line

Claims (12)

A first substrate comprising thin film transistors and pixel electrodes arranged in a matrix ;
A second substrate provided with a counter electrode facing the pixel electrode ;
A liquid crystal having a negative dielectric anisotropy disposed between said second substrate and said first substrate, I vertical alignment type liquid crystal display device der of having a
At least one of the first substrate and the second substrate, a vertical alignment film, the domain regulating means for controlling the alignment direction of liquid crystal molecules is provided at the time of voltage application,
The said domain regulating means includes a first insulating material layer which is formed on the pixel electrode, wherein the first insulating material layer conductive material layer formed on the, which is formed on the conductive material layer and a second insulating material layer seen including,
A liquid crystal display device, wherein the vertical alignment film is formed on the second insulating material layer . Having the domain regulating means has inclined obliquely to the plane of the pixel electrode surface, the liquid crystal display device according to claim 1. The liquid crystal display device according to claim 1, wherein the second insulating material layer is formed so as to surround the first insulating material layer and the conductive material layer . Wherein the first insulating material layer made of a high organic material melting or softening point than the material of the second insulating material layer,
The second insulating material layer is made of photosensitive organic material,
Wherein either conductive material layer consists of a single species of metal or more metals of the alloy, or a multilayer structure composed of a plurality of metals or alloys, liquid crystal display device according to any one of claims 1 to 3. 5. The drain bus line and the gate bus line are formed on the first substrate, and the domain restricting means is used as a repair electrode for a disconnected portion of the drain bus line or the gate bus line. A liquid crystal display device according to any one of the above. The thin film transistor is the domain regulating means are extended to the periphery of the region formed in a matrix, it forms a common line intersecting the extraction electrode of the thin film transistor, using the common lines as the repair electrode The liquid crystal display device according to claim 5 . The conductive material layer functions as a storage capacitor electrode, a liquid crystal display device according to any one of claims 1 to 6. The liquid crystal display device according to claim 7 , wherein a bias voltage is applied to the conductive material layer . The liquid crystal display device according to claim 7 , wherein the second substrate includes a striped transparent electrode. A thin film transistor mainly composed of a gate electrode, a gate insulating film, an operating semiconductor film, and a source / drain electrode, a gate bus line connecting the gate electrodes, a drain bus line connecting the drain electrodes, and a source electrode of the thin film transistor A thin film transistor substrate formed with a thin film transistor matrix formed by forming a transparent conductive film to be a pixel electrode into a matrix, and another substrate having a counter electrode facing the pixel electrode of the substrate, and a liquid crystal display device, At least one of the substrates is provided with domain restriction means for controlling the alignment direction of the vertically aligned liquid crystal molecules, and the structure constituting the domain restriction means includes a conductive material surrounded by an insulating material. A method of manufacturing a liquid crystal display device The first insulating film, the conductive material film, and the second insulating film are sequentially formed on the substrate, and then the second insulating film is patterned, thereby patterning the second insulating film. Using the film as a mask, the conductive material film is patterned isotropically, then the first insulating film is anisotropically patterned, and the second insulating film material of the uppermost layer of the obtained laminated structure is obtained. A method for manufacturing a liquid crystal display device , wherein the liquid crystal display device is formed by heating and fluidizing. The first insulating material is an organic material having a higher melting point or softening point than the second insulating material, the second insulating material is a photosensitive organic material, and the conductive material is a single kind of metal or The method according to claim 10 , which is an alloy of a plurality of kinds of metals or a multi-layered material made of these metals or alloys. 12. A method according to claim 10 or 11 , wherein one or both of the first and second insulating materials is a colored organic material.

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